TW201907508A - 多區半導體基板材支撐件 - Google Patents

多區半導體基板材支撐件 Download PDF

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TW201907508A
TW201907508A TW107116553A TW107116553A TW201907508A TW 201907508 A TW201907508 A TW 201907508A TW 107116553 A TW107116553 A TW 107116553A TW 107116553 A TW107116553 A TW 107116553A TW 201907508 A TW201907508 A TW 201907508A
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heater
substrate support
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梅莫特圖格魯爾 薩米爾
冬青 楊
迪米奇 路柏曼斯基
彼得 希爾曼
壽南 朴
馬汀岳 蔡
朱拉拉
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美商應用材料股份有限公司
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Abstract

公開了多區半導體基板材支撐件。示例性支撐組件可包括頂部圓盤和與頂部圓盤耦接的背托板材。支撐組件可包括與背托板材耦接的冷卻板材。支撐組件可包括耦接在冷卻板材和背托板材之間的加熱器。支撐組件還可包括圍繞背托板材的外部與背托板材耦接的背板材。背板材可至少部分地限定一容積，並且加熱器和冷卻板材可被容納在該容積內。

Description

多區半導體基板材支撐件
本技術涉及用於半導體製造的部件和裝置。更具體地，本技術涉及基板材支撐組件和其他半導體處理設備。
通過在基板材表面上產生複雜圖案化材料層的製程而使積體電路成為可能。在基板材上產生圖案化材料需要用於形成和去除材料的受控的方法。這些製程發生時所處的溫度可直接影響最終產品。在處理期間，常常利用支撐基板材的組件來控制和維持基板材溫度。可橫跨支撐組件的表面或穿過支撐組件的深度而發生的溫度波動可能創建橫跨基板材的溫度區或區域。具有不同的溫度的這些區域可能影響在基板材上執行的或對基板材執行的製程，這往往可能降低沿著基板材沉積的膜或蝕刻的結構的均勻性。取決於沿著基板材的表面的變化的程度，元件失效可能因由應用產生的不一致性而發生。
另外，容納在半導體處理腔室內的結構可受在腔室內執行的製程影響。例如，在腔室內沉積的材料可沉積在腔室內的設備上和在基板材本身上。材料還可沉積在支撐基座上，這可能引起基板材對準的問題以及在正被處理的基板材上再沉積的問題。
因此，需要改進的可用於生產高品質元件和結構的系統和方法。本技術解決了這些和其他需要。
示例性支撐組件可包括頂部圓盤和與頂部圓盤耦接的背托板材。支撐組件可包括與背托板材耦接的冷卻板材。支撐組件可包括耦接在冷卻板材和背托板材之間的加熱器。支撐組件還可包括圍繞背托板材的外部與背托板材耦接的背板材。背板材可至少部分地限定一容積，並且加熱器和冷卻板材可被容納在該容積內。
在一些實施例中，頂部圓盤可限定在頂部圓盤的內區和外區之間的熱中斷部。熱中斷部可以是或可以包括圍繞頂部圓盤的內半徑限定的溝槽。在實施例中，熱中斷部可包括圍繞頂部圓盤的內半徑在頂部圓盤的第一表面處限定的第一溝槽，以及圍繞頂部圓盤的第二內半徑在頂部圓盤的與該第一表面相對的第二表面處限定的第二溝槽。第一溝槽和第二溝槽中的至少一者可圍繞頂部圓盤不連續地延伸。冷卻板材可限定在冷卻板材內的至少一個通道，該至少一個通道被配置成在冷卻板材中分配從中央埠輸送的流體。
在實施例中，加熱器可包括與背托板材在第一位置處耦接的第一加熱器，以及與背托板材在從該第一位置徑向向外的第二位置處耦接的第二加熱器。冷卻板材和背托板材可限定徑向位於第一加熱器和第二加熱器之間的間隙。在一些實施例中，第二加熱器可延伸到冷卻板材的頂表面的徑向邊緣。第一加熱器和第二加熱器可被配置成彼此獨立地操作。第一加熱器和第二加熱器可被配置成維持+/- 0.5℃的橫跨在基板材支撐組件上的基板材的溫度均勻性。頂部圓盤可以是或可以包括鋁。加熱器可以是或可以包括聚合物加熱器。頂部圓盤可限定圍繞頂部圓盤的外半徑的至少一個凹入橫檔。基板材支撐組件可包括邊緣環，邊緣環可沿著凹入橫檔圍繞頂部圓盤延伸。邊緣環可在頂部圓盤的頂部平面上方垂直地延伸。邊緣環可由與頂部圓盤的外徑相等的外徑來表徵。頂部圓盤可限定多個凹部，並且邊緣環可被配置成安置在位於該多個凹部內的陶瓷銷上。在一些實施例中，邊緣環可安置在陶瓷銷上而不接觸頂部圓盤。
本技術還涵蓋可包括頂部圓盤的基板材支撐組件。該基板材支撐組件可包括耦接到頂部圓盤的多個加熱器。加熱器可包括橫跨頂部圓盤的後表面延伸的電阻加熱器。基板材支撐組件可包括冷卻板材，冷卻板材與多個加熱器在冷卻板材的第一表面處耦接。冷卻板材可限定通道，該通道被配置成穿過冷卻板材來分配溫度受控流體。基板材支撐組件還可包括與冷卻板材的與第一表面相對的第二表面耦接的絕緣體。
在一些實施例中，頂部圓盤和絕緣體可包括陶瓷。多個加熱器可包括至少四個印刷加熱器，並且在實施例中，該四個印刷電阻加熱器中的至少三個可以由環形形狀來表徵。頂部圓盤和冷卻板材可限定在頂部圓盤的外邊緣下方延伸的通道，並且該通道可被配置成安置彈性體元件。在一些實施例中，基板材支撐組件還可包括沿著凹入橫檔圍繞冷卻板材的外部定位的邊緣環。
這種技術可以提供優於傳統系統和技術的許多益處。例如，特別的加熱和冷卻設備耦接可提供改進的加熱和冷卻效能，以改善晶圓製程均勻性。另外，各種淨化通道可在製造操作期間改進殘留顆粒的去除。結合以下描述和附圖更詳細地描述這些和其他實施例以及它們的許多優點和特徵。
本技術包括在半導體處理操作期間用於加熱和冷卻分佈的改進的基座設計。儘管常規基座可在操作期間控制基板材的總體溫度，但所描述的本技術允許對橫跨基座的整個表面和外表的溫度特性進行改進的控制。該技術允許基座在有限溫度範圍中在多個獨立的區中受控。如此，可以執行改進的操作，因為駐留在基座上的基板材可以橫跨整個表面維持更均勻的溫度分佈。下面將詳細闡釋這些以及其他益處。
儘管其餘的公開內容將常規地識別利用所公開的技術的特定的蝕刻製程，但是將容易理解，系統和方法同樣適用於可能在所述腔室中發生的沉積和清潔製程。因此，該技術不應被認為是如此限制為僅與蝕刻製程一起使用。本公開將論述可以與本技術一起使用以執行某些去除操作的一個可能的系統和腔室，然後描述根據本技術的實施例的對此系統的額外的改變和調整。
圖1示出根據實施例的沉積、蝕刻、烘烤和固化腔室的處理系統100的一個實施例的俯視平面視圖。在附圖中，一對前開式聯合晶圓盒（FOUP）102供應多種大小的基板材，這些基板材是由機器人臂104接收並在放入到基板材處理腔室108a-f中的一個中之前放入到低壓保持區域106中，基板材處理腔室108a-f定位在串聯區段109a-c中。第二機器人臂110可以用於將基板材晶圓從保持區域106傳輸到基板材處理區域108a-f並傳輸回。每個基板材處理腔室108a-f可經裝配來執行許多基板材處理操作，這些基板材處理操作除了迴圈層沉積（CLD）、原子層沉積（ALD）、化學氣相沉積（CVD）、物理氣相沉積（PVD）、蝕刻、預先清潔、脫氣、取向和其他基板材製程之外，還包括了本文中描述的幹法蝕刻製程。
基板材處理腔室108a-f可以包括用於使介電膜在基板材晶圓上沉積、退火、固化和/或蝕刻的一個或多個系統部件。在一個配置中，兩對處理腔室（例如，108c-d和108e-f）可用於將介電膜沉積在基板材上，並且第三對處理腔室（例如，108a-b）可用於蝕刻沉積的介電質。在另一配置中，所有三對腔室（例如，108a-f）可以被配置為蝕刻基板材上的介電膜。所述製程中的任一種或多種可以在與不同的實施例中示出的製造系統分開的腔室中進行。將瞭解，系統100還設想了用於介電膜的沉積腔室、蝕刻腔室、退火腔室和固化腔室的另外配置。
圖2A示出了處理腔室內具有分隔的電漿產生區域的示例性處理腔室系統200的橫截面視圖。在膜蝕刻期間，例如氮化鈦、氮化鉭、鎢、矽、多晶矽、氧化矽、氮化矽、氮氧化矽、碳氧化矽等製程氣體可通過氣體入口組件205流入第一電漿區域215中。遠端電漿系統（RPS）201可視情況包括在系統中，並且可以處理第一氣體，隨後，所述第一氣體行進通過氣體入口組件205。入口組件205可包括兩個或更多個不同的氣體供應通道，其中第二通道（未示出）可繞過RPS 201（如若包括的話）。
示出冷卻板材203、面板材217、離子抑制器223、噴頭225和具有基板材255設置在其上的基板材支撐件265，並且它們各自可根據實施例而包括。基座265可以具有熱交換通道，熱交換流體流過該熱交換通道以控制基板材的溫度，該基座可以在處理操作期間被操作以加熱和/或冷卻基板材或晶圓。可包含鋁、陶瓷或它們的組合的基座265的晶圓支撐盤也可以使用嵌入式電阻加熱器元件被電阻加熱來實現相對高的溫度，諸如從高達或為約100℃至高於或為約1100℃的溫度。
面板材217可以是角錐形、圓錐形或其他類似的結構，其中窄頂部擴展到寬底部。如圖所示，面板材217可另外地是平坦的，並且包括用於分配製程氣體的多個通道。取決於RPS 201的使用，電漿產生氣體和/或電漿激發物質可穿過面板材217中的多個孔，如圖2B所示，以更均勻地遞送到第一電漿區域215中。
示例性配置可以包括使氣體入口組件205通向藉由面板材217與第一電漿區域215分隔開的氣體供應區域258，使得氣體/物質通過在面板材217中的孔流入第一電漿區域215。結構和操作特徵可被選擇以防止電漿從第一電漿區域215大量地回流到供應區域258、氣體入口組件205和流體供應系統210中。面板材217（或腔室的導電頂部）和噴頭225被示出為具有定位在特徵之間的絕緣環220，這允許了AC電勢相對於噴頭225和/或離子抑制器223施加至面板材217。可將絕緣環220定位在面板材217與噴頭225和/或離子抑制器223之間，從而使得電容耦接電漿（CCP）能夠形成在第一電漿區域中。擋板材（未示出）可另外地位於第一電漿區域215中，或以其他方式與氣體入口組件205耦接，以影響流體通過氣體入口組件205進入該區域的流動。
離子抑制器223可以包括板材或其他幾何結構，板材或其他幾何結構在整個結構上限定了多個孔，這些孔被配置為抑制離子帶電物質遷移出第一電漿區域215，同時允許不帶電荷的中性或自由基物質穿過離子抑制器223進入抑制器與噴頭之間的活化氣體遞送區域。在實施例中，離子抑制器223可以包括具有多種孔配置的多孔板材。這些不帶電荷的物質可能包括高反應性的物質，這些物質通過孔與較低反應性的載氣一起運輸。如上所述，離子物質通過孔的遷移可能被減少，並且在一些情況下可能被完全地抑制。控制穿過離子抑制器223的離子物質的量可有利地提供對與下面的晶圓基板材接觸的氣體混合物的增加的控制，這進而可增加對氣體混合物的沉積和/或蝕刻特性的控制。例如，氣體混合物的離子濃度的調整可顯著地改變其蝕刻選擇性，例如，SiNx:SiOx蝕刻比率、Si:SiOx蝕刻比率等。在執行沉積的替代實施例中，這也可以使介電材料的共形到可流動型沉積的平衡偏移。
在離子抑制器223中的多個孔可被配置為控制活化氣體（即，離子型、自由基和/或中性物質）通過離子抑制器223。例如，孔深寬比、或者孔直徑與長度的比和/或孔的幾何形狀可被控制成使得通過離子抑制器223的活化氣體中的帶離子電荷的物質的流量減少。在離子抑制器223中的孔可以包括面向電漿激發區域215的錐形部分和面向噴頭225的圓柱形部分。可設定圓柱形部分的形狀和尺寸以控制通向噴頭225的離子物質的流量。還可將可調整電偏置施加至離子抑制器223作為控制通過抑制器的離子物質的流量的另外手段。
離子抑制器223可以用來減少或消除從電漿生成區域行進到基板材的帶離子電荷的物質的量。不帶電荷的中性和自由基物質仍可穿過在離子抑制器中的開口來與基板材反應。應注意，在實施例中可不執行對在基板材周圍的反應區域中的離子帶電物質的完全消除。在某些情況下，離子物質旨在到達基板材以執行蝕刻和/或沉積製程。在這些情況下，離子抑制器可有助於控制反應區域中的離子物質的濃度處在有助於製程的水準。
與離子抑制器223結合的噴頭225可允許存在於第一電漿區域215中的電漿避免直接激發基板材處理區域233中的氣體，同時仍允許激發物質從腔室電漿區域215行進到基板材處理區域233中。以這種方式，腔室可以被配置為防止電漿接觸正在被蝕刻的基板材255。這可以有利地保護在基板材上圖案化的各種複雜的結構和膜，否則如若與產生的電漿直接接觸，這些結構和膜可能會被損壞、錯位或翹曲。另外，當允許電漿接觸基板材或接近基板材水準時，氧化物物質蝕刻的速率可能提高。因此，如若暴露的材料區域是氧化物，則可通過維持電漿遠離基板材而進一步保護此材料。
處理系統可進一步包括與處理腔室電耦接的電源240，以向面板材217、離子抑制器223、噴頭225和/或基座265提供電力來在第一電漿區域215或處理區域233中產生電漿。電源可以被配置為根據執行的製程來向腔室遞送可調量的電力。這種配置可允許可調諧的電漿用於正在執行的製程中。與通常具有開或關功能的遠端電漿單元不同，可調諧的電漿可以被配置為向電漿區域215遞送特定量的電力。這進而可以允許形成特定電漿特性，使得前驅物可以特定方式解離來增強由這些前驅物產生的蝕刻分佈。
電漿可以在噴頭225上方的腔室電漿區域215或噴頭225下方的基板材處理區域233中激發。在實施例中，形成於基板處理區域233中的電漿可為用基座充當電極形成的DC偏置電漿。電漿可存在於腔室電漿區域215中以通過例如含氟前驅物或其他前驅物的流入而產生自由基前驅物。典型地在射頻（RF）範圍內的AC電壓可以施加在處理腔室的導電頂部（例如面板材217）與噴頭225和/或離子抑制器223之間以在沉積期間激發腔室電漿區域215中的電漿。RF電源可以產生13.56MHz的高RF頻率，但也可以單獨或與13.56MHz頻率組合地產生其他頻率。
圖2B示出了影響通過面板材217的處理氣體分配的特徵的詳細視圖253。如圖2A和2B所示，面板材217、冷卻板材203和氣體入口組件205相交以限定氣體供應區域258，製程氣體可從氣體入口205遞送到氣體供應區域258中。氣體可填充氣體供應區域258並通過面板材217中的孔259流動到第一電漿區域215中。孔259可以被配置為以基本上單向的方式引導流動，使得製程氣體可流入處理區域233中，但可部分或完全地防止製程氣體在越過面板材217之後回流到氣體供應區域258中。
用於處理腔室區段200中的氣體分配組件（諸如噴頭225）可以稱為雙通道噴頭（DCSH），並另外詳細示出在圖3中所述的實施例中。雙通道噴頭可以提供用於蝕刻製程，從而允許在處理區域233外的蝕刻劑在遞送到處理區域中之前分離，以便提供與腔室部件以及彼此的受限相互作用。
噴頭225可以包括上板材214和下板材216。可將板材彼此耦接以在板材之間限定容積218。板材的耦接可如此來提供穿過上板材和下板材的第一流體通道219、以及穿過下板材216的第二流體通道221。所形成的通道可被配置成僅經由第二流體通道221來提供從容積218穿過下板材216的流體進出口，並且第一流體通道219可與在板材與第二流體通道221之間的容積218流體隔離。容積218可以穿過氣體分配組件225一側流體進出。
圖3是根據實施例的與處理腔室一起使用的噴頭325的仰視圖。噴頭325可與圖2A中示出的噴頭225對應。示出第一流體通道219的視圖的穿孔365可以具有多個形狀和配置，以便控制和影響穿過噴頭225的前驅物流動。示出第二流體通道221的視圖的小孔375可基本上均勻地分配在噴頭的表面上方，甚至是在穿孔365之間，並可有助於在前驅物離開噴頭時，使前驅物比其他配置更均勻的混合。
圖4示出了根據本技術的實施例的示例性基板材支撐組件400的示意性局部橫截面視圖。基板材支撐組件400可與先前論述的基板材支撐件或基座265類似，且可包括上面利用這個結構所論述的一些或全部特徵。如圖所示，基板材支撐組件400包括頂部圓盤405、背托板材415、加熱器425、冷卻板材435和背板材445。背托板材415可與頂部圓盤405耦接。冷卻板材435可與背托板材415直接或間接地耦接，而加熱器425可被耦接在冷卻板材435和背托板材415之間。背板材445可以沿背托板材415的周邊或外側部分417與背托板材415耦接。背板材445可以限定在背板材445的頂表面446中的橫檔（ledge）447，橫檔447向下延伸至背板材445的限定在頂表面446中的內部區域449。背板材445的內部區域449可以從背板材445的中心軸線徑向延伸並且可以從下方限定容積450。背板材445還可以限定容積450的側面，其中背板材445的升高部分451垂直延伸至橫檔447。
背板材445和背托板材415可以通過類似或等同的外直徑來表徵，使得所耦接的部件限定支撐組件400的基本垂直的側壁。背托板材415可以從上方至少部分地限定容積450，使得容積450是在基板材支撐組件400內的限定容積。在實施例中，加熱器425和冷卻板材435可容納在容積450內。背板材445的升高部分451還可以包括被限定在背板材445的頂表面446中的溝槽452。溝槽452可以被配置成安置O形環或彈性體元件以提供背板材445與背托板材415之間的密封。
頂部圓盤405可以限定頂部圓盤405內的一個或多個熱中斷部408、410，頂部圓盤405可以與背托板材415一起至少部分地限定一個或多個通道，這將在下面更詳細地描述。在實施例中，頂部圓盤405可限定頂部圓盤405內的任何數量的熱中斷部，並且可包括至少或約2個、至少或約3個、至少或約4個、至少或約5個、至少或約6個、至少或約7個、至少或約8個、至少或約9個、至少或約10個或更多個的熱中斷部。在一些實施例中，諸如基板材支撐組件400中所示，頂部圓盤405可以限定一個或兩個熱中斷部。第一熱中斷部408可以被限定在頂部圓盤405的頂表面406內，並且可以由穿過頂部圓盤405的深度來表徵。
在實施例中，第一熱中斷部408可以圍繞頂部圓盤405而徑向限定，並且可以被配置成至少部分地將頂部圓盤405分成內區412和外區414。第一熱中斷部408可以是或包括沿著頂部圓盤的內半徑圍繞頂部圓盤405限定的溝槽。在實施例中，第一熱中斷部408的深度可以大於頂部圓盤405的厚度的一半，並且可以大於或為頂部圓盤405的厚度的大約60％、大於或為頂部圓盤405的厚度的大約70％、大於或為頂部圓盤405的厚度的大約80％、大於或為頂部圓盤405的厚度的大約90％、或者等於或為頂部圓盤405的厚度的大約100％。在溝槽與頂部圓盤405完全相交的情況下，內區412和外區414可以是與背托板材415單獨耦接的兩個分離部件。在實施例中，第一熱中斷部408可以被配置成熱隔離內區412和外區414。這種隔離可以允許內區412和外區414在操作期間被分開加熱或冷卻。
熱中斷部可以包括多個中斷部，包括第二熱中斷部410，第二熱中斷部410可以被限定在頂部圓盤405的底表面407中或與第一表面或頂表面406相對的表面中。第二熱中斷部410可以被限定在頂部圓盤405的第二內半徑處，其可以相對於第一熱中斷部408徑向向內或徑向向外。第二熱中斷部410可以由穿過頂部圓盤405的第二深度來表徵，該第二深度可以大於、等於、或小於第一熱中斷部408的第一深度。例如，如圖所示，第二熱中斷部410可以由小於第一熱中斷部408的深度的深度來表徵。第一熱中斷部408和第二熱中斷部410中的任一者或兩者可以圍繞頂部圓盤405連續地或不連續地延伸。例如，第一熱中斷部408可以圍繞頂部圓盤405基本上連續地延伸，除了可以在橫跨第一熱中斷部408的底部區域處具有一個或多個連接部，諸如最小厚度的延伸部，以將頂部圓盤405的內區412耦接到外區414，這可以允許頂部圓盤405的一體式設計。然而，第二熱中斷部410可以具有圍繞溝槽的半徑的數個部分，其中溝槽未被形成為穿過頂部圓盤405。這種佈置將在下面進一步詳細描述。
多個熱中斷部的益處在於，自頂表面限定的熱中斷部和自底表面限定的熱中斷部可以有助於減小兩個區之間的串擾，這可以允許在區之間進行甚至更微調的溫度調節。頂部圓盤405可以由任何數量的材料構成，並且在實施例中可以是或包括鋁材料。頂部圓盤405可以是任何類型的鋁，包括塗覆或電鍍的鋁。例如，在實施例中，頂部圓盤405可以是鍍鎳或鍍鈦的鋁，這可以保護頂部圓盤405免受蝕刻。
在實施例中，加熱器425可以包括電阻加熱器或流體加熱器。加熱器425可以包括聚合物加熱器，該聚合物加熱器與冷卻板材435的頂表面436接合或耦接並且還與背托板材415接合或耦接。加熱器425在實施例中可以包括多個加熱器，並且可以包括第一加熱器426和第二加熱器427。第一加熱器426可以在第一位置處與背托板材415耦接，而第二加熱器427可以在第二位置處與背托板材415耦接。第一加熱器426可以定位在冷卻板材435的內部區域，並且可以定位在內區412內或與內區412成一直列。第二加熱器427可以定位在冷卻板材435的外部區域，並且可以定位在外區414內或與外區414成一直列。在實施例中，第二加熱器427可定位在第一熱中斷部408的徑向外側。間隙437可以由背托板材415從上方限定並且可以由冷卻板材435從下方限定。間隙437可以位於第一加熱器426和第二加熱器427之間，並且可以是徑向地位於兩個加熱器之間的環形間隙。在一些實施例中，第二加熱器427可以延伸接近冷卻板材435的頂表面436的徑向邊緣，並且第二加熱器427可以延伸至冷卻板材435的頂表面436的徑向邊緣。
第一加熱器426和第二加熱器427可以彼此獨立地操作，並且可以能夠調節橫跨頂部圓盤405的溫度以及駐留在頂部圓盤405上的基板材的溫度。每個加熱器可以具有操作溫度的範圍，該範圍延伸至高於或為約25℃，並且每個加熱器可以被配置成加熱至高於或為約50℃、高於或為約60℃、高於或為約70℃、高於或為約80℃、高於或為約90℃、高於或為約100℃、高於或為約125℃、高於或為約150℃、高於或為約175℃、高於或為約200℃、高於或為約250℃、高於或為約300℃、高於或為約350℃、高於或為約400℃、高於或為約500℃、高於或為約600℃、高於或為約700℃、或更高的溫度。加熱器也可以被配置成在包含在這些所闡明的數字中的任意兩個之間的任何範圍中或者在包含在這些範圍中的任何一個範圍內的較小範圍中操作。
第一加熱器426和第二加熱器427也可以被配置成在彼此的溫度範圍內操作，並且被配置成維持橫跨頂部圓盤405的表面或駐留在頂部圓盤405上的基板材的表面的特定溫度。例如，第一加熱器426可被配置成操作來將內區412維持在第一溫度，並且第二加熱器427可被配置成操作來將外區414維持在與第一溫度相似或不同的第二溫度。加熱器或區的每個溫度可以是上面闡明的或所包括的任何溫度，這可以允許兩個加熱器以幾十或幾百度的差進行操作。另外，在實施例中，兩個加熱器的操作溫度之間或內區412和外區414的所維持溫度之間的差可以小於10℃。兩個加熱器之間的溫度差或由兩個區所維持的溫度差也可以小於或為約5℃、小於或為約4℃、小於或為約3℃、小於或為約2℃、小於或為約1℃、小於或為約0.9℃、小於或為約0.8℃、小於或為約0.7℃、小於或為約0.6℃、小於或為約0.5℃、小於或為約0.4℃、小於或為約0.3℃、小於或為約0.2℃、小於或為約0.1℃、或更小。通過允許兩個區之間的這種微小的溫度差，可在操作期間控制由於前驅物橫跨基板材流動而發生的溫度波動、來自其他腔室部件的干擾、基於製造步驟而發生在一個區中但不發生在另一個區中的反應或操作、以及其他波動源。與傳統技術相比，這可以允許改善橫跨區和橫跨正被處理的基板材的均勻性。
冷卻板材435可以限定在冷卻板材435內的一個或多個通道438。通道438可以被配置成圍繞冷卻板材435分配一種或多種溫度受控流體。通道438可以從在冷卻板材435的中央或內部區域的中央埠439接入，中央埠439可從基板材支撐組件的桿接入。冷卻流體可以沿桿向上輸送並進入中央埠439，中央埠439然後可以允許流體圍繞通道438流動。通道438可呈任何數量的幾何圖案，諸如螺旋或線圈，以及圍繞冷卻板材435的基本同心的圓。該圖案可以在返回到亦可位於冷卻板材的中央區域處的出口埠之前延伸到冷卻板材435的外部，並且可以提供對在基座的桿內的附加通道或耦接件的接入以允許流體返回熱交換器或用於冷卻和再迴圈的其他裝置。如圖所示，冷卻板材435可以不完全延伸到背板材445的升高部分451，並且可以維持冷卻板材435的徑向邊緣與背板材445的升高部分451之間的容積450的間隙。這種間隙可以限制或防止從冷卻板材435和加熱器425到背板材445的熱連通，該熱連通可以傳導通過到頂部圓盤405。
頂部圓盤405可以限定圍繞頂部圓盤405的外半徑的一個或多個凹入橫檔404。凹入橫檔404可以朝向頂部圓盤405的邊緣延伸或逐級下降，凹入橫檔404可由與背托板材415和/或背板材445的外徑類似或相等的外徑來表徵。圖4中示出兩個凹入橫檔404，但頂部圓盤405可以限定任何數量的凹入橫檔404。凹入橫檔404和頂部圓盤405的數個方面在圖5中進一步示出，圖5示出了根據本技術的實施例的示例性基板材支撐組件400的另一個示意性局部橫截面視圖。
如圖5所示，基板材支撐組件400可以包括頂部圓盤405，頂部圓盤405可以由多個凹槽505來表徵，凹槽505可以圍繞頂部圓盤405而形成或限定。凹槽505可以提供用於形成真空夾盤的路徑以使基板材駐留在頂部圓盤405上，真空夾盤可在操作期間限制基板材移動。如前所述，頂部圓盤405還可以限定一個或多個凹入橫檔404。如圖所示，第一凹入橫檔404a和第二凹入橫檔404b被限定在頂部圓盤405中，並且第二凹入橫檔404b可以延伸到頂部圓盤405的外邊緣。頂部圓盤405可以限定在頂部圓盤405內的一個或多個凹部510。凹部510可以是圓柱形凹部、矩形凹部、或延伸到穿過頂部圓盤405的深度的任何其他幾何形狀。在實施例中，凹部510可以圍繞頂部圓盤405的邊緣區域分佈，並且可以包括一個凹部、兩個凹部、三個凹部、四個凹部、五個凹部、六個凹部、七個凹部、八個凹部、九個凹部、十個凹部、或更多個凹部。
凹部510可以為銷515提供位置，銷515可以定位在頂部圓盤405的凹部510內。凹部510可被限定在圍繞頂部圓盤405外部區域的任何位置處，並且在實施例中，凹部510被限定在凹入橫檔404內，凹入橫檔404限定在頂部圓盤405中。如圖所示，凹部510可被限定在位於頂部圓盤405的頂表面406下方且在第二凹入橫檔404b上方的第一凹入橫檔404a中，第二凹入橫檔404b位於第一凹入橫檔404a下方。凹部510在凹入橫檔404a中可被限定在圍繞頂部圓盤405的多個位置中，並且在實施例中，凹入橫檔404a可以限定在約2和約10個凹部510之間、在約2和約5個凹部510之間、或者在約2和約4個凹部510之間。在一些實施例中，凹入橫檔404a可以限定圍繞頂部圓盤405等距分佈的三個凹部510。銷515可以是或者可以包括陶瓷銷，陶瓷銷具有坐落在凹部510內的第一部分516和在凹部510上方延伸的第二部分517。銷515的第二部分517可以限定一表面，邊緣環520被安置在該表面上。
邊緣環520可以被安置在位於頂部圓盤405內的凹部510中的多個銷515上。邊緣環520可以是與頂部圓盤405相似的材料或不同的材料，並且在實施例中，邊緣環520可以包括鍍鎳的鋁或其他經鍍覆的鋁，其可以例如在利用含鹵素前驅物的蝕刻操作期間限制邊緣環520的腐蝕。在實施例中，邊緣環520可以沿著凹入橫檔404圍繞頂部圓盤延伸，並且可以在頂部圓盤405的垂直上方延伸，以便在頂部圓盤405的頂部平面上方垂直地延伸。邊緣環520可以由內邊緣522來表徵，內邊緣522在實施例中可以是斜角的或倒角的，朝向頂部圓盤405延伸。邊緣環520還可以由與頂部圓盤405的外徑相等或類似的外徑來表徵，使得在一些實施例中，邊緣環520不延伸超過頂部圓盤405的外半徑。邊緣環520可以被安置在銷515上，並且可以在頂部圓盤405上方浮置。在一些實施例中，邊緣環520可以不接觸頂部圓盤405，這可以允許頂部圓盤405的每個表面（包括凹入橫檔404）和邊緣環520之間的連續間隔。淨化氣體可以流過穿過頂部圓盤405且延伸穿過凹入橫檔404的孔，這可以允許從邊緣環520周圍連續淨化。在一些實施例中，邊緣環520可允許來自腔室的外部邊緣的前驅物流的量被阻擋以防止或限制對基板材的邊緣區域的附加蝕刻、沉積或處理。
圖6示出了根據本技術的實施例的示例性背托板材600的俯視平面視圖。背托板材600可以被配置成與基板材支撐組件的頂部圓盤一起至少部分地限定流動通道，並且提供通路以用於通過基座和頂部圓盤輸送淨化氣體以限制或防止基板材支撐組件上的沉積、蝕刻或顆粒積聚。背托板材600可以由基本環形的形狀來表徵，並且可以限定穿過背托板材600的多個孔。孔605可以與穿過頂部圓盤的孔對齊以提供將真空夾盤施加穿過背托板材600和相關聯的頂部圓盤（諸如先前描述的頂部圓盤405）的直接路徑。孔610和孔615可以提供通向限定在背托板材600和與背托板材耦接的頂部圓盤之間的通道的接入，這可以將淨化氣體引導到頂部圓盤的附加區域。
孔610可以提供對由背托板材600的頂表面602限定的第一凹部612的接入。背托板材600可以限定圍繞背托板材600徑向分佈的一個或多個孔610，並且如圖所示，示出了四個孔連同相應的第一凹部612，但取決於特定基板材支撐組件的幾何形狀、尺寸和間隔，示例性背托板材600在實施例中可包括更多或更少的孔610和第一凹部612。第一凹部612可以被限定為跨背托板材600的外部部分，並且可以自孔610沿兩個相反方向徑向或橫向地限定。第一凹部612的各個臂可以在彎曲或偏離背托板材600的外邊緣之前橫向地延伸。沿著第一凹部612的每個臂可以是穿過與背托板材相關聯的頂部圓盤的接入孔，其可以為淨化氣體提供流動路徑。
孔615可以提供對由背托板材600的頂表面602限定的第二凹部616的接入。背托板材600可以限定圍繞背托板材600徑向分佈的一個或多個孔615，並且如圖所示，示出了四個孔連同相應的第二凹部616，但取決於特定基板材支撐組件的幾何形狀、尺寸和間隔，示例性背托板材600在實施例中可包括更多或更少的孔615和第二凹部616。提供對第二凹部616的接入的孔615可以圍繞背托板材600以與提供對第一凹部612的接入的孔610交替的方式形成，如在一些實施例中所示。在實施例中，第二凹部616可以朝向背托板材600的中央區域徑向向內限定，並且可以限定擴展到兩個路徑618的遞迴圖案，然後可以延伸到四個路徑620。沿著第二凹部616的每個臂可以是穿過與背托板材相關聯的頂部圓盤的接入孔，其可以為淨化氣體提供流動路徑。以這種方式，如圖所示的第一凹部612的組合可以提供對穿過相關聯的頂部圓盤而限定的總共八個孔的接入，並且第二凹部616的組合可以提供對穿過相關聯的頂部圓盤且相對於從第一凹部612接入的八個孔徑向向內而限定的16個孔的接入。這樣的設計可以提供充足的淨化氣流穿過頂部圓盤，這可以限制或防止在頂部圓盤的表面上的或在駐留在頂部圓盤上的基板材周圍的顆粒積聚。在其他實施例中，可以圍繞並穿過背托板材和相關聯的頂部圓盤形成任何附加數量的孔。
背托板材600還可限定圍繞背托板材600的半徑延伸的第三凹部625，第三凹部625可與諸如上述的第一熱中斷部408之類的熱中斷部對齊。背托板材600還可以限定第四凹部630，不同於可以限定在頂表面602內的所論述的任何其他凹部，第四凹部630可以完全穿透背托板材600。第四凹部630可以與諸如上述的第二熱中斷部410之類的熱中斷部對齊。由於第二熱中斷部410向上延伸穿過頂部圓盤405的底部，因此通過利用第四凹部630提供穿過背托板材600的完整凹進，可以提供更一致且更顯著的熱中斷部。第三凹部625和第四凹部630中的一者或兩者也可以與加熱器之間的諸如上述的間隙437之類的間隙對齊。這可以在基板材支撐組件的內區和外區之間提供額外的熱中斷部。
轉向圖7A，圖7A示出了根據本技術的實施例的示例性基板材支撐組件的示意性局部橫截面視圖。該橫截面可以是如圖6所示的直通線A，例如，可以提供背托板材600的孔610以及第一凹部612的圖示。該基板材支撐組件可以與先前描述的基板材支撐組件400類似或是替代視圖，並且可以包括頂部圓盤405、邊緣環520、背托板材415和背板材445。如圖所示，背板材445可以限定一個或多個通道705，通道705用於將淨化氣體從基板材支撐組件的中央區域（諸如桿）向外輸送到基板材支撐組件的外部。通道705可以徑向向外延伸穿過背板材445，然後在垂直方向上朝向背托板材415而轉向。孔610可以提供對第一凹部612的接入，第一凹部612可以產生由頂部圓盤405從上方限定的通道。在此通道內，沿著頂部圓盤405可以限定一個或多個孔，該一個或多個孔向上穿過頂部圓盤405，進入頂部圓盤405的邊緣區域，諸如在邊緣環520下方。
圖7B示出了根據本技術的實施例的示例性基板材支撐元組件的示意性局部橫截面視圖。該橫截面可以是如圖6所示的直通線B，例如，可以提供背托板材600的孔615以及第二凹部616的圖示。如圖所示，背板材445可以限定一個或多個額外通道705，通道705用於將淨化氣體從基板材支撐組件的中央區域（諸如桿）向外輸送到基板材支撐組件的外部。通道705可以徑向向外延伸穿過背板材445，然後在垂直方向上朝向背托板材415轉向。孔615可以提供對第二凹部616的接入，第二凹部616可以產生由頂部圓盤405從上方限定的通道。在此通道內，沿著頂部圓盤405可以限定一個或多個孔，該一個或多個孔向上穿過頂部圓盤405，穿過凹部616的遞迴路徑進入頂部圓盤405的一個或多個內部區域。孔可以在（諸如沿著凹部616的徑向部分的以及沿著遞迴部分618和620的）多個位置中被限定穿過頂部圓盤405。例如，示例性孔715、716在圖7C中示出，圖7C沿著替代線或橫截面示出了根據本技術的實施例的示例性基板材支撐組件的示意性局部橫截面視圖。如圖所示，孔715可以沿著凹部616定位，而孔716可以位於遞迴區域618內。應當理解，所論述的示例性孔圖案僅用於說明，並且由本技術實現的各種孔圖案（包括背托板材構造）也同樣包含在內。
圖8示出了根據本技術的實施例的示例性基板材支撐組件800的示意性局部橫截面視圖。基板材支撐組件800可以類似於先前論述的基板材支撐件400或基座265，並且可以包括上面利用這些結構所討論論述的一些或全部特徵。基板材支撐組件800可以包括頂部圓盤805。與頂部圓盤805耦接的可以是多個加熱器815。加熱器815可以是電阻加熱器或溫度受控流體流過的流體通道。在諸如所示的那些實施例中，加熱器815可以是橫跨頂部圓盤805的後表面延伸的電阻加熱器。冷卻板材820可以在冷卻板材的頂表面822處與多個加熱器815耦接。冷卻板材820還可以限定一個或多個通道825，通道825被配置成穿過冷卻板材來分配溫度受控流體。
絕緣體830可以與冷卻板材820的與頂表面822相對的第二表面824耦接。絕緣體830在實施例中可以是或可以包括陶瓷，並且頂部圓盤805在實施例中也可以是或包括陶瓷。在實施例中，冷卻板材820和背板材835可以是或可以包括鋁，包括如先前所述的經處理或塗覆的鋁。背板材835可以耦接在絕緣體830下面。背板材835、絕緣體830和冷卻板材820可以彼此耦接，並且在實施例中可以直接耦接在一起。耦接件可以各自限定穿過該結構的至少一個通道840的至少一部分，通道840可以為升降銷842提供接入。升降銷842可以被配置成升高穿過通道840並且穿過頂部圓盤805以提升和降低基板材。冷卻板材820可限定從頂表面822延伸到冷卻板材820的徑向邊緣的凹入橫檔827。凹入橫檔827可延伸經過頂部圓盤805的徑向邊緣。
邊緣環845可以圍繞冷卻板材820的外部定位在凹入橫檔827上。邊緣環845可以包括頂表面846，頂表面846從被安置在凹入橫檔827上的邊緣環845的主體延伸。頂表面846可以限定在頂部圓盤805的外半徑上徑向或水準地延伸的唇部847，並且可以由朝向頂部圓盤805延伸的斜角或倒角邊緣來表徵。在實施例中，唇部847可以不接觸頂部圓盤805，並且可以在部件之間提供空間，該空間被配置成允許淨化氣體在唇部847和頂部圓盤805之間通過。邊緣環845還可以包括側壁848，側壁848從被安置在凹入橫檔827上的邊緣環845的主體延伸。側壁848可以限定延伸部849，延伸部849圍繞絕緣體830和背板材835垂直延伸。延伸部849可以不接觸絕緣體830或背板材835，並且可以在部件之間提供空間，該空間被配置成允許淨化氣體在延伸部849以及絕緣體830和背板材835之間通過。在實施例中，延伸部849可以延伸至背板材835的基底厚度，並且可以稍微延伸超過或低於背板材835以限制或防止在堆疊的部件上的顆粒積聚。
在各種配置中，加熱器815可以包括橫跨頂部圓盤805的背部的多個加熱器。例如，加熱器815可以包括多個聚合物或印刷加熱器，其沿頂部圓盤805徑向向外延伸以橫跨頂部圓盤805產生多個徑向區。例如，圓形圖案中的中央加熱器可以被安置或印刷在頂部圓盤805下方的中央位置處。具有環形形狀的附加加熱器可以圍繞中央加熱器安置，並且可以包括向外延伸的任何數量的加熱器，包括大於或為約2個加熱器、大於或為約3個加熱器、大於或為約4個加熱器、大於或為約5個加熱器、大於或為約6個加熱器、大於或為約7個加熱器、或更多個加熱器。加熱器可以包括可調電阻，這可以允許加熱器被獨立控制並且在不同溫度下操作。每個加熱器可以在先前描述的任何溫度下操作，並且如前所述，加熱器可以維持在溫度差。
轉向圖9，圖9示出了根據本技術的實施例的示例性基板材支撐組件800的另外的示意性局部橫截面視圖。圖9示出移除了邊緣環845的橫截面視圖。如圖所示，可以看到頂部圓盤805包括凹入橫檔907，邊緣環845的唇部847可以在凹入橫檔907上延伸。凹入橫檔909也可沿頂部圓盤805的徑向邊緣處的冷卻板材820的頂表面而限定。如圖所示，凹入橫檔909可沿著冷卻板材820徑向向內延伸且在頂部圓盤805下方延伸小於凹入橫檔907的距離的一半。在一些實施例中，凹入橫檔909可以延伸小於或為凹入橫檔907的徑向向內距離的大約40％，並且可以延伸小於或為約30％、小於或為約20％、小於或為約10％、小於或為約5％、或更少。
凹入橫檔909可以至少部分地限定通道910，通道910由冷卻板材820的頂表面822從下方限定。通道910可以在頂部圓盤805的外邊緣下方延伸，諸如在凹入橫檔909內延伸，且通道910可被配置成將彈性體元件或O形環安置在頂部圓盤和冷卻板材之間。如上所述，冷卻板材820、絕緣體830和背板材835可以直接耦接在一起，這可以減少或消除部件之間的顆粒分佈。頂部圓盤805可以與該結構分離地耦接，並且如圖所示定位在通道910內的頂部圓盤805和冷卻板材820之間的彈性體元件可以限制或防止頂部圓盤與其他部件之間的任何顆粒分佈。
在前面的描述中，出於解釋的目的，已經闡述了許多細節以便提供對本技術的各種實施例的理解。然而，對於本領域技術人員而言，將顯而易見的是，某些實施例可以在沒有這些細節中的一些細節的情況下或者在具有附加細節的情況下實踐。
已公開了數個實施例，本領域技術人員會理解，可使用多種修改、替代構造、以及等同體而不背離實施例的精神。另外，許多公知的製程和要素未被描述以免不必要地模糊本技術。因此，上面的描述不應當被認為是限制本技術的範圍。
在提供值的範圍的情況下，要理解，除非上下文另有明確規定，否則在該範圍的上限和下限之間的每個中間值，特別是下限單位的最小部分亦被具體公開。在闡明的範圍中的任何闡明的值或未闡明的中間值之間的任何較窄範圍以及該闡明的範圍中的任何其他闡明值或中間值被涵蓋。這些較小範圍的上限和下限可以獨立地被包括在該範圍中或排除在外，並且其中在該較小範圍中包括任一限值、不包括任一限值或包括兩個限值的每一個範圍亦被涵蓋在本技術內，受限於所闡明的範圍中的任何具體排除的限值。在所闡明的範圍包括限值中的一個或兩個的情況下，排除這些被包括的限值中的任一個或兩個限值的範圍亦被包括。
如此處和所附權利要求中所使用的，除非上下文另外明確規定，否則單數形式的「一」、「一個」和「該」包括複數指代。因此，例如，對「一層」的引用包括多個這樣的層，而對「前驅物」的引用包括對本領域技術人員已知的一種或多種前驅物及其等同物的引用，等等。
此外，當在本說明書和所附權利要求中使用時，詞語「包括（comprise(s)）」、「包括（comprising）」、「包含（contain(s)）」、「含有（containing）」、「包括（include(s)）」和「包括（including）」旨在指明所闡明的特徵、整體、部件或操作的存在，但是它們不排除一個或多個其他特徵、整體、部件、操作、行為或群組的存在或添加。
100‧‧‧處理系統
102‧‧‧前開式聯合晶圓盒（FOUP）
104‧‧‧機器人臂
106‧‧‧保持區域
108a、108b、108c、108d、108e、108f‧‧‧基板處理腔室
109a、109b、109c‧‧‧串聯區段
110‧‧‧第二機器人臂
200‧‧‧腔室區段
201‧‧‧遠端電漿系統（RPS）
203‧‧‧冷卻板材
205‧‧‧氣體入口組件
210‧‧‧流體供應系統
214‧‧‧上板材
215‧‧‧第一電漿區域
216‧‧‧下板材
217‧‧‧面板材
218‧‧‧容積
219‧‧‧第一流體通道
220‧‧‧腔室區段
221‧‧‧第二流體通道
223‧‧‧離子抑制器
225‧‧‧噴頭
233‧‧‧基板處理區域
240‧‧‧電源
253‧‧‧視圖
255‧‧‧基板材
258‧‧‧氣體供應區域
259‧‧‧孔
265‧‧‧基座
325‧‧‧噴頭
365‧‧‧穿孔
375‧‧‧小孔
400‧‧‧基板材支撐組件
404‧‧‧凹入橫檔
404a‧‧‧第一凹入橫檔
404b‧‧‧第二凹入橫檔
405‧‧‧頂部圓盤
406‧‧‧頂表面
407‧‧‧底表面
408‧‧‧熱中斷部
410‧‧‧熱中斷部
414‧‧‧外區
412‧‧‧內區
415‧‧‧背托板材
417‧‧‧外側部分
425‧‧‧加熱器
426‧‧‧第一加熱器
427‧‧‧第二加熱器
435‧‧‧冷卻板材
436‧‧‧頂表面
437‧‧‧間隙
438‧‧‧通道
439‧‧‧中央埠
445‧‧‧背板材
446‧‧‧頂表面
447‧‧‧橫檔
449‧‧‧內部區域
450‧‧‧容積
451‧‧‧升高部分
452‧‧‧溝槽
505‧‧‧凹槽
510‧‧‧凹部
515‧‧‧銷
516‧‧‧第一部分
517‧‧‧第二部分
520‧‧‧邊緣環
522‧‧‧內邊緣
600‧‧‧背托板材
602‧‧‧頂表面
605‧‧‧孔
610‧‧‧孔
612‧‧‧第一凹部
615‧‧‧孔
616‧‧‧凹部
618‧‧‧遞迴區域
620‧‧‧路徑
625‧‧‧第三凹部
630‧‧‧第四凹部
705‧‧‧通道
715‧‧‧孔
716‧‧‧孔
800‧‧‧基板材支撐組件
805‧‧‧頂部圓盤
815‧‧‧加熱器
820‧‧‧冷卻板材
822‧‧‧頂表面
824‧‧‧第二表面
825‧‧‧通道
827‧‧‧凹入橫檔
830‧‧‧絕緣體
835‧‧‧背板材
840‧‧‧通道
842‧‧‧升降銷
845‧‧‧邊緣環
846‧‧‧頂表面
847‧‧‧唇部
848‧‧‧側壁
849‧‧‧延伸部
907‧‧‧凹入橫檔
909‧‧‧凹入橫檔
910‧‧‧通道
參考說明書的剩餘部分和附圖可實現對公開的技術的本質與優點的進一步理解。
圖1示出了根據本技術的實施例的示例性處理系統的俯視平面視圖。
圖2A示出了根據本技術的實施例的示例性處理腔室的示意性橫截面視圖。
圖2B示出了根據本技術的實施例的示例性噴頭的詳細視圖。
圖3示出了根據本技術的實施例的示例性噴頭的仰視平面視圖。
圖4示出了根據本技術的實施例的示例性基板材支撐組件的示意性局部橫截面視圖。
圖5示出了根據本技術的實施例的示例性基板材支撐組件的示意性局部橫截面視圖。
圖6示出了根據本技術的實施例的示例性背托板材的俯視平面視圖。
圖7A示出了根據本技術的實施例的示例性基板材支撐組件的示意性局部橫截面視圖。
圖7B和圖7C示出了根據本技術的實施例的示例性基板材支撐組件的示意性局部橫截面視圖。
圖8示出了根據本技術的實施例的示例性基板材支撐組件的示意性局部橫截面視圖。
圖9示出了根據本技術的實施例的示例性基板材支撐組件的示意性局部橫截面視圖。
包括幾個圖作為示意圖。應理解，這些附圖用於說明目的，並且除非特別聲明按比例，否則不應被視為按比例。此外，作為示意圖，提供這些附圖是為了幫助理解，並且可以不包括與實際表示相比的所有方面或資訊，並且可以包括用於說明目的的放大的材料。
在附圖中，類同的部件和/或特徵可具有相同的附圖標記。進一步地，相同類型的各種部件可通過在附圖標記後跟隨在類似部件之間進行區分的字母來加以區分。如若在說明書中僅使用第一附圖標記，則該描述適用於具有相同第一附圖標記的類似部件中的任何一個，而不管該字母如何。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無

Claims (20)

  1. 一種基板材支撐組件，包括： 一頂部圓盤； 一背托板材，所述背托板材與所述頂部圓盤耦接； 一冷卻板材，所述冷卻板材與所述背托板材耦接； 一加熱器，所述加熱器耦接在所述冷卻板材和所述背托板材之間；以及 一背板材，所述背板材圍繞所述背托板材的外部與所述背托板材耦接，其中所述背板材至少部分地限定一容積，並且其中所述加熱器和所述冷卻板材被容納在所述容積內。
  2. 如權利要求1所述的基板材支撐組件，其中所述頂部圓盤限定在所述頂部圓盤的一內區和一外區之間的一熱中斷部，並且其中所述熱中斷部包括圍繞所述頂部圓盤的一內半徑限定的一溝槽。
  3. 如權利要求2所述的基板材支撐組件，其中所述熱中斷部包括圍繞所述頂部圓盤的一內半徑在所述頂部圓盤的一第一表面處限定的一第一溝槽，以及圍繞所述頂部圓盤的一第二內半徑在所述頂部圓盤的與所述第一表面相對的一第二表面處限定的一第二溝槽。
  4. 如權利要求3所述的基板材支撐組件，其中所述第一溝槽和所述第二溝槽中的至少一者圍繞所述頂部圓盤不連續地延伸。
  5. 如權利要求1所述的基板材支撐組件，其中所述冷卻板材限定在所述冷卻板材內的至少一個通道，所述至少一個通道被配置成在所述冷卻板材中分配從一中央埠輸送的一流體。
  6. 如權利要求1所述的基板材支撐組件，其中所述加熱器包括與所述背托板材在一第一位置處耦接的一第一加熱器，以及與所述背托板材在從所述第一位置徑向向外的一第二位置處耦接的一第二加熱器。
  7. 如權利要求6所述的基板材支撐組件，其中所述冷卻板材和所述背托板材限定徑向位於所述第一加熱器和所述第二加熱器之間的一間隙，並且其中所述第二加熱器延伸到所述冷卻板材的一頂表面的一徑向邊緣。
  8. 如權利要求7所述的基板材支撐組件，其中所述第一加熱器和所述第二加熱器被配置成彼此獨立地操作，並且其中所述第一加熱器和所述第二加熱器被配置成維持+/- 0.5℃的橫跨在所述基板材支撐組件上的一基板材的溫度均勻性。
  9. 如權利要求1所述的基板材支撐組件，其中所述頂部圓盤包含鋁。
  10. 如權利要求1所述的基板材支撐組件，其中所述加熱器包括一聚合物加熱器。
  11. 如權利要求1所述的基板材支撐組件，其中所述頂部圓盤限定圍繞所述頂部圓盤的一外半徑的至少一個凹入橫檔。
  12. 如權利要求11所述的基板材支撐組件，進一步包括一邊緣環，所述邊緣環沿著所述凹入橫檔圍繞所述頂部圓盤延伸，其中所述邊緣環在所述頂部圓盤的一頂部平面上方垂直地延伸。
  13. 如權利要求12所述的基板材支撐組件，其中所述邊緣環由與所述頂部圓盤的一外徑相等的一外徑來表徵。
  14. 如權利要求12所述的基板材支撐組件，其中所述頂部圓盤限定多個凹部，並且其中所述邊緣環被配置成安置在位於所述多個凹部內的陶瓷銷上。
  15. 如權利要求14所述的基板材支撐組件，其中所述邊緣環安置在所述陶瓷銷上而不接觸所述頂部圓盤。
  16. 一種基板材支撐組件，包括： 一頂部圓盤； 一多個加熱器，所述多個加熱器耦接到所述頂部圓盤，其中所述加熱器包括橫跨所述頂部圓盤的一後表面延伸的電阻加熱器； 一冷卻板材，所述冷卻板材與所述多個加熱器在所述冷卻板材的一第一表面處耦接，其中所述冷卻板材限定一通道，所述通道被配置成穿過所述冷卻板材來分配一溫度受控流體；以及 一絕緣體，所述絕緣體與所述冷卻板材的與所述第一表面相對的一第二表面耦接。
  17. 如權利要求16所述的基板材支撐組件，其中所述頂部圓盤和所述絕緣體包含一陶瓷。
  18. 如權利要求16所述的基板材支撐組件，其中所述多個加熱器包括至少四個印刷加熱器，並且其中所述四個印刷電阻加熱器中的至少三個加熱器由一環形形狀來表徵。
  19. 如權利要求16所述的基板材支撐組件，其中所述頂部圓盤和所述冷卻板材限定在所述頂部圓盤的一外邊緣下方延伸的一通道，其中所述通道被配置成安置一彈性體元件。
  20. 如權利要求16所述的基板材支撐組件，進一步包括一邊緣環，所述邊緣環沿著所述凹入橫檔圍繞所述冷卻板材的一外部定位。
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