TWM547181U - 利用二次電漿佈植的電漿蝕刻系統 - Google Patents

利用二次電漿佈植的電漿蝕刻系統 Download PDF

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TWM547181U
TWM547181U TW105212936U TW105212936U TWM547181U TW M547181 U TWM547181 U TW M547181U TW 105212936 U TW105212936 U TW 105212936U TW 105212936 U TW105212936 U TW 105212936U TW M547181 U TWM547181 U TW M547181U
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托恩Ｑ 崔恩
壽南 朴
子路 翁
迪米奇 路柏曼斯基
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應用材料股份有限公司
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Description

利用二次電漿佈植的電漿蝕刻系統
本公開涉及電漿處理系統。
在電漿處理中，電漿形成電離和/或能量激發物質，以與可為例如半導體晶圓的工件相互作用。為了形成和/或維持電漿，一個或多個射頻(RF)和/或微波發生器通常產生振盪電場和/或磁場。在一些晶圓處理系統中，電漿是在與所處理的一個或多個晶圓相同的位置中產生的；在其他情況下，電漿在一個位置中產生，並移動至晶圓受處理的另一位置。所產生的電漿通常包含高能和/或高腐蝕性物質和/或高能電子，使得產生它們的設備有時因與高能物質和/或電子接觸發生劣化。例如，暴露於高能物質和/或電子的材料可能被蝕刻和/或濺射，從而產生經蝕刻和/或經濺射的材料，該蝕刻和/或濺射材料可繞各種表面移動並且可反應或沉積在各種表面上。
在一個實施方式中，一種用於電漿處理的裝置包括：第一電漿源；第一平面電極；氣體分配設備；電漿阻擋篩網；以及工件卡盤。該第一電漿源產生第一電漿產物。該第一平面電極包括限定從其中穿過的多個第一孔隙的第一板材，該第一平面電極的第一側設置為相對於該第一電漿源，使得該第一電漿產物從該第一電漿源離開，穿過該多個第一孔隙到達該第一平面電極的第二側。該氣體分配設備包括限定從其中穿過的多個第二孔隙的第二板材，該氣體分配設備的第一側設置為面對該第一平面電極的第二側，使得該第一電漿產物繼續穿過該多個第二孔隙到達該氣體分配設備的第二側。該電漿阻擋篩網包括限定從其中穿過的多個第四孔隙的第三板材，該電漿阻擋篩網的第一側設置為面對該氣體分配設備的第二側，使得該第一電漿產物穿過該多個第四孔隙到達該電漿阻擋篩網的第二側。該工件卡盤面對該電漿阻擋篩網的第二側，使得在該電漿阻擋篩網與該工件卡盤之間限定製程腔室。該第四孔隙具有足夠小的大小，以便阻擋該製程腔室中產生的電漿到達該氣體分配設備。
在一個實施方式中，電漿處理腔室包括工件保持器和平面電極。該平面電極跨其中心區域限定以一定厚度分開的平行且相對的第一平面表面和第二平面表面。第二平面表面設置為面對該工件夾具工件保持器。該平面電極限定從其中穿過的多個孔隙。該孔隙中的每者以第一孔隙部分和第二孔隙部分表徵。該第一孔隙部分限定孔軸以及垂直于該孔軸的第一孔隙較短側向尺寸，該第一孔隙部分從該第一平面表面延伸穿過該厚度的至少一半。該第二孔隙部分限定第二孔隙較短側向尺寸，該第二孔隙較短側向尺寸小於該第一孔隙較短側向尺寸，並且從該第二平面表面延伸穿過該厚度的不到一半。該第一孔隙部分和該第二孔隙部分軸向鄰接，以將該孔隙形成為從該第一平面表面至該第二平面表面的連續孔隙。
在一個實施方式中，用於電漿處理的裝置包括：氣源；第一平面電極；第二平面電極；第一電源；電漿阻擋篩網；工件卡盤；以及第二電源。該第一平面電極包括限定從其中穿過的多個第一孔隙的第一板材，該第一平面電極的第一側設置為相對於該氣源，使得來自於該氣源的氣體穿過該多個第一孔隙到達該第一平面電極的第二側。該第二平面電極包括限定從其中穿過的多個第二孔隙的第二板材，該第二平面電極的第一側設置為面對該第一平面電極的第二側。該第一電源將射頻（RF）功率耦合在該第一平面電極和該第二平面電極上。第一電漿是用該氣體在該第一平面電極與該第二平面電極之間產生的，並且來自於該第一電漿的第一電漿產物穿過該多個第二孔隙到達該第二平面電極的第二側。該電漿阻擋篩網包括限定從其中穿過的多個第三孔隙的第三板材，該電漿阻擋篩網的第一側設置為面對該第二平面電極的第二側，使得該第一電漿產物穿過該多個第三孔隙到達該電漿阻擋篩網的第二側。該工件卡盤面對該電漿阻擋篩網的第二側，從而在該電漿阻擋篩網與該工件卡盤之間限定製程腔室。該第二電源將射頻（RF）功率耦合在該電漿阻擋篩網和該工件卡盤上，從而會用該氣體在該電漿阻擋篩網和該工件卡盤之間產生第二電漿。
圖1示意性地示出根據一個實施方式的電漿處理系統100的主要元件。系統100被描繪為單晶圓半導體晶圓電漿處理系統，但是對本領域中的技術人員將顯而易見的是，本文的技術和原理也適用於任何類型電漿產生系統（例如，不一定處理晶圓或半導體的系統）。處理系統100包括用於晶圓介面115、使用者介面120、電漿處理單元130、控制器140、一個或多個電源150和一個或多個射頻（RF）發生器165的外殼110。處理系統100由各種設施支援，該設施可包括氣體155、外部電源170、真空160和任選地其他物質。為了清楚例示，並未示出處理系統100內的內部管道和電連接。
處理系統100被示為所謂的間接電漿處理系統，該間接電漿處理系統在第一位置處產生電漿並將電漿和/或電漿產物（例如，離子、分子碎片、帶電物質等等）引向發生處理的第二位置。因此，在圖1中，電漿處理單元130包括電漿源132，它為製程腔室134供應電漿和/或電漿產物。製程腔室134包括一個或多個工件保持器135，晶圓介面115將工件50（例如，半導體晶圓，然而，也可以是不同類型工件）放在該工件保持器上，以待處理。在操作中，將氣體155引入到電漿源132中，並且RF發生器165中的至少一者供應功率以在電漿源132內點燃第一電漿。在電漿源132內，可存在有施加RF功率並產生電漿的多個區域。電漿和/或電漿產物從電漿源132穿過擴散器板材137到製程腔室134。可將另外的氣體添加到製程腔室134中的電漿和/或電漿產物，還可在製程腔室134內提供RF功率來產生另一電漿。在製程腔室134中處理工件50。
因此，一般來說，在電漿處理系統內的一個、兩個或更多個位置處點燃電漿，並且本文所公開的技術可適應於點燃和/或使用在單個或多個位置處形成的電漿的電漿處理系統。某些電子元件製造商會偏好能夠以多種配置來靈活地點燃和/或使用電漿的系統，使得每個系統可適用於對應多種處理需要。
圖2以截面圖示意性地示出根據一個實施方式的電漿處理系統200的主要元件。電漿處理系統200是圖1的電漿處理單元130的實例。電漿處理系統200包括電漿源210和製程腔室205，該電漿源和製程腔室也可產生電漿，如下論述。在圖2的取向中，氣體和/或電漿產物大體流動方向是向下的，並且這個方向在本文中可以稱為「下游」，而圖2的取向中相反向上方向可以稱為「上游」。另外，圖2中示出的裝置的大部分可為圍繞中心軸201圓柱形對稱的，其中相關聯的方向被限定為徑向方向202和方位方向203。這種方向約定可以用於本文，但是本領域的技術人員應當理解，許多本文所述原理並不限於圓柱形對稱的系統。
如圖2所示，電漿源210可將氣體、和/或由上游遠端電漿源電離的氣體作為電漿源氣體212引入穿過RF電極215。RF電極215電連系至第一氣體擴散器220和面板材225，用於將源氣流重新定向，使得氣流均勻地分佈於電漿源210（在圖2的視圖中，從左至右均勻）。應當注意，本文中的所有擴散器或篩網可表徵為電極，因為任何此類擴散器或篩網可連系至特定電位。絕緣體230使RF電極215（包括面板材225）與保持電接地的擴散器235電氣絕緣。擴散器235用作背對RF電極215的面板材225的第二電極。面板材225、擴散器235和絕緣體230的表面限定第一電漿產生空腔，當電漿源氣212存在並且RF能量藉由RF電極215提供在面板材225處時，在該第一電漿產生空腔中產生第一電漿245。RF電極215、面板材225和擴散器235可由任何導體形成，並且在一個實施方式中，由鋁（或鋁合金，諸如已知「6061」合金類型）形成。面板材225和擴散器235的直接面對電漿245的表面可塗佈有例如氧化釔（Y2O3）或氧化鋁（Al2O3）的陶瓷層，以便抵抗電漿245中產生的通電電漿產物所造成的轟擊。面板材225和擴散器235的不一定直接暴露於電漿下但暴露於電漿所產生的反應氣體和/或自由基的其他表面可塗佈有陶瓷層（例如，氧化釔、氧化鋁）或合適的鈍化層（例如，陽極化層，或化學產生的氧化鋁層），以便實現化學耐性。絕緣體230可為任何的絕緣體，並且在一個實施方式中，它由陶瓷形成。
電漿245中產生的電漿產物穿過擴散器235，這再次有助於促使電漿產物均勻分佈，並且可有助於電子溫度控制。在穿過擴散器235後，電漿產物穿過任選的氣體分配設備260，以促成均勻性。（某些實施方式並不包括氣體分配設備260；參見例如圖7。）任選的氣體分配設備260也保持為電接地的。完全穿過任選的氣體分配設備260的孔隙的直徑為擴散器235內的孔隙的直徑的至少3倍。另外，氣體分配設備260包括另外氣體通道250，該另外氣體通道可以用於在一種或多種另外氣體155(2)進入製程腔室205（也就是說，氣體155(2)僅從氣體分配設備260的遠離擴散器235的一側彙集）時，將這些氣體向電漿產物引導。任選的氣體分配設備260還可由鋁或鋁合金製成，並且正如上文論述的面板材225和擴散器235那樣，可至少部分塗佈有用於實現化學耐性的鈍化層，或可塗佈有陶瓷層。
氣體155(1)、155(2)和/或來自於電漿245的電漿產物進入氣室空腔265，隨後穿過電漿阻擋篩網270(1)到達製程腔室205。電漿阻擋篩網270(1)可以形成在0.15至1.0英寸的範圍內的厚度，並且形成許多較小孔隙，這些孔隙被配置成允許來自上游源的氣體以及電漿產物穿過，以便進入製程腔室205，同時基本阻擋來自上游部件的下游電漿以及電漿產物，如下文中詳細論述。在一個實施方式中，電漿阻擋篩網270可有利地在其中心區域形成每平方英寸至少10個孔隙，並且在某些實施方式中，可以形成每平方英寸30或更多個孔隙。類似任選的氣體分配設備260，電漿阻擋篩網270(1)也保持為電接地的。類似以上論述的面板材225和擴散器235，電漿阻擋篩網270(1)的直接暴露於電漿下的表面有利地塗佈有陶瓷（例如，氧化鋁或氧化釔），而未直接暴露於電漿的表面也可塗佈陶瓷，並有利地至少塗佈有鈍化層，以實現對反應氣體和活化物質的化學耐性。如上所述那樣來產生的所有氣體和/或電漿產物與工件50在製程腔室205內相互作用，並且可以在製程腔室205內產生另外電漿275。當在製程腔室205內期望電漿時，由於擴散器235被保持為電接地的（並且當存在時，任選的氣體分配設備260），用於形成電漿275的RF功率被施加到工件保持器135。DC偏壓還可以施加到工件保持器135，以便操控電漿275中產生的離子，從而促成對工件50的定向（各向異性）蝕刻，如下論述。工件保持器135可與RF和/或DC偏壓源可切換地連接，以便在所選時間而非其他時間上、在製程腔室205內產生電漿。工件保持器135可與如用於在面板材225與擴散器235之間形成電漿245的相同RF功率源連接，或者可與不同RF功率源連接。
電漿阻擋篩網270(1)的使用、選擇是否穿過將RF功率和/或DC偏壓提供至工件保持器135來產生等離子或不產生此類電漿的能力以及本文所述其他特徵提供處理系統200的應用靈活性。例如，在第一時間上，處理系統200可以在其中電漿未在製程腔室205內產生的模式下操作。在第一時間上，處理系統200的上游部分提供的氣體和/或電漿產物可以提供各向同性蝕刻，並且工件保持器135可保持為處於DC接地（但是可在工件保持器135的空間部分上提供DC偏移，以便實現靜電晶圓卡緊）。在第二時間上，處理系統200可以在其中電漿在製程腔室205內產生的模式下操作，並且它的電漿產物可由電漿阻擋篩網與工件保持器135之間的DC偏壓操控。在第二時間上，DC偏壓所操控的電漿產物可以提供各向異性蝕刻，例如以便去除工件上的較廣表面沉積、同時留下側壁，或將工件中的較深溝槽內的材料清除。電漿阻擋篩網270(1)的特徵在圖3和圖4中更詳細地示出，同時圖2中的指示為A的部分的放大圖在圖6中詳細示出。
圖3示出電漿阻擋篩網270的一部分，諸如圖2的電漿阻擋篩網270(1)。電漿阻擋篩網270限定平行且相對的平面表面268和269，並且限定延伸穿過電漿阻擋篩網270的多個孔隙271，如圖2所示。第一平面表面268和第二平面表面269表徵電漿阻擋篩網270的中心部分；然而，在中心部分外，電漿阻擋篩網可較厚或較薄，以便提供電漿處理系統200的其他結構的附接點。孔隙271專門用於允許大量電漿產物以最小的壁效應穿過其中，但是阻擋來自電漿處理系統200的其他部分的電漿275中的電漿，其中電漿會對其他部件造成損壞。圖3示出單個孔隙271的特徵，其特徵為第一孔隙部分272和第二孔隙部分273，如圖所示。第一孔隙部分272可為圓柱形的，這可促進製造，但是也可限定其他形狀，例如具有矩形或六邊形截面。任何此類截面可沿第一孔隙部分272的豎直深度H1保持相對恆定（給定電漿阻擋篩網270(1)的取向，如圖2和圖3所示），並且視為限定孔軸（例如，豎直孔軸，如圖2和圖3所示）。第一孔隙部分272在側向方向（例如，垂直于孔軸的方向）的較短側向尺寸示為W1。本文中的「較短側向尺寸」表示表徵具有豎直側的孔隙的任何側向尺寸中的最大那個（例如，如果第一孔隙部分272是圓柱形的，那麼較短側向尺寸W1是圓柱體的直徑，如果第一孔隙部分272是矩形的，那麼較短側向尺寸W1是矩形邊的較小那個等等）。類似地，第二孔隙部分273的豎直深度示為H2，而第二孔隙部分273在側向方向的較小側向尺寸示為W2。H1和H2的總和是在平面表面268和269之間電漿阻擋篩網270的厚度。
現在參考圖2和圖3兩者，尺寸H1、W1、H2和W2被選擇成在來自于上方（在圖2所示取向上）的電漿產物穿過孔隙271時，最小化壁效應，而且還會阻擋電漿275產物到達任選的氣體分配設備260（如果存在）和/或電漿處理系統200的其他上游部件。研究表明（參見圖5），即使當孔隙271設有高度非常短的第二孔隙部分273時，適當寬度W2也將顯著降低第一孔隙部分272內和上方電子密度。電子密度可以用於估計任何電漿產物將穿過孔隙271並對上游部件造成影響的程度。在本文中的實施方式中，寬度W2小於0.050"，而高度H2在0.050"與0.100"之間。對於機械的完整性，H1通常大於H2，並且在本文中的實施方式中，H1通常為0.10"或更大。W1不如W2那麼關鍵，但是較大W1會減少壁效應（例如，離子的再組合、啟動物質的去啟動等等），以便保持穿過孔隙271的電漿產物的活性。W1可為例如0.02"至0.25"。
圖4示出電漿阻擋篩網270'的一部分，它是圖3的電漿阻擋篩網270的修改例。電漿阻擋篩網270'限定多個孔隙271'，類似孔隙271，該孔隙271'專門用於允許大量電漿產物以最小的壁效應穿過其中，但是阻擋來自電漿處理系統200的其他部分的電漿275中的電漿。圖4示出單個孔隙271'的特徵，其特徵為第一孔隙部分272和第二孔隙部分273'，如圖所示。第一孔隙部分272在特性上與圖3中示出的相同特徵相同，並類似地，由此可為圓柱形的，這可促成製造，但是第一孔隙部分272還可限定其他形狀，例如矩形或六邊形截面。第二孔隙部分273'限定鄰接第一孔隙部分272的圓柱形的上部部分276以及從上部部分276向外朝第二平面表面269張開的下部部分277。下部部分277可實際為圓錐形的，如圖4所示，或者可僅僅從豎直方向向外彎曲。相對于孔軸（例如，豎直孔軸，如圖4所示）成15度至65度的角度θ可以是有利的，如下論述。因此，上部部分276可表徵為具有直徑，並且該下部部分277的直徑在下部部分277鄰接平面表面269的位置處大於上部部分276的直徑。上部部分276和下部部分277軸向鄰接，以使孔隙271'貫穿電漿阻擋篩網270'。
形成孔隙271'使其包括圓錐形的下部部分277已發現對製造具有高品質的電漿阻擋篩網270、將氧化鋁或氧化釔繼續塗佈在面對著有源電漿的表面（諸如第二平面表面269以及第二孔隙部分273、273'的側表面）上來說是有利的。第一平面表面268以及第一孔隙部分272的側壁還任選地塗佈有氧化鋁或氧化釔。如本領域的技術人員所已知，某些沉積技術（濺射）趨於高度定向，也就是說，要沉積的物質趨於在直線上從源行進，並附著到該物質遇到的第一事物。這使得其難以在狹窄孔隙（諸如圖3中的第二孔隙部分273）內提供有均勻厚度且較高密度的膜。提供圓錐形或其他漸縮邊緣部分（諸如圖4的下部部分277）不僅允許在漸縮邊緣上實現改進沉積，而且還返回至上部部分276，因為上部部分276的內壁的每一個點會相對於可沉積材料的位置「形成」更廣泛的角度。出於這個原因，還應瞭解，當下部部分277存在時，上部部分276的某些深寬比（例如，上部部分276的深度H3相對於上部部分276的寬度W2的深寬比，如圖4所示）以及因此所形成的相應角度θ可以是有利的。當下部部分277提供通向濺射源的相對開放入口時，在0.5至4.0的範圍內的深寬比可有利地提供相對於上部部分276的表面上的每一個點的廣泛角度。
圖5示出對支持選擇圖3和圖4的第二孔隙部分273、273'的較短側向尺寸的數據建模的圖300。在圖300中，水準軸線是對位置建模，其中導體（例如，工件保持器135和晶圓50）假定呈現約4釐米，結構孔洞（例如，具有電漿275在其中的製程腔室205）從約4釐米至幾乎7釐米（注意，在圖300中，示為折線），並且電漿阻擋篩網270界定從約7釐米延伸到圖300的末端。豎直軸線指示在實心導體與工件保持器之間的電漿區域內的建模電子密度。建模假定電漿利用He在1 Torr的壓力和200 W的功率下點燃。圖300示出具有第二孔隙部分273的若干較小側向尺寸的電漿阻擋篩網270的建模電子密度資料。在約102至較低103的範圍內的電子密度視為表示基本無電漿的區域，也就是說，電子和/或其他電漿產物數量是低至可忽略的。電子密度在電漿區域內較高，並且在電漿阻擋篩網270處降低。使用圖3中示出的標注，所建模的所有電漿阻擋篩網270假定H2在0.050"至0.100"的範圍內，W1在0.100"至0.150"的範圍內，並且H2在0.300"至0.400"的範圍內。空心圓圈資料310是具有在0.100"至0.150"的範圍內的W2的第二孔隙部分273，實心三角資料320是具有在0.050"至0.100"的範圍內的W2的第二孔隙部分273，並且實心矩形資料330是具有在0.020"至0.050"的範圍內的W2的第二孔隙部分273。
資料310和320表明，具有標注相應W2的第二孔隙的電漿阻擋篩網270將會降低傳輸到相鄰區域（例如，延伸到圖300的右側的區域，或者在圖2中的電漿阻擋篩網270(1)上方的區域）的電子密度，但將無法對其進行有效阻擋。資料330表明，具有在0.020"至0.050"的範圍內的W2的電漿阻擋篩網270將會幾乎完全阻擋來自於相鄰上游區域的電漿。雖然在阻擋來自於上游區域的有源電漿的方面是有效的，但是電漿阻擋篩網270並不阻擋來自於上游電漿的電漿產物、和/或氣體在下游方向上穿過。
圖6示意性地示出圖2中指出的區域A。如圖2中所示，工件50示為在製程腔室205內的工件保持器135上。氣體155和/或先前所形成的電漿產物流過電漿阻擋篩網270(1)，進入製程腔室205，在該製程腔室中，另外電漿275形成。如上指出，電漿阻擋篩網270(1)被保持為電接地的。RF能量以及DC偏壓被施加到工件保持器135，以向電漿275提供能量。由於在製程腔室205記憶體在反應物質和離子轟擊源兩者，因此製程腔室205的內表面設有能夠阻擋來自於此類源的攻擊的材料（一般來說，但不限於，陶瓷）。材料還可選擇用來管理電場分佈（就DC意義和AC意義兩者而言），以便最大化遞送到電漿275中的RF功率。例如，工件保持器135可塗佈有鋁或氮化鋁，並且電漿阻擋篩網270(1)可塗佈有氧化鋁或氧化釔。任選陶瓷隔件350和/或任選陶瓷泵送內襯370可以用於減小工件保持器135的邊緣的側向電場。陶瓷隔件350以及陶瓷泵送內襯370是環形的，使得它們圍繞製程腔室205周邊延伸，但不跨過製程腔室205的中心區域，並且有利地由低損耗角正切值的材料（諸如高純度氧化鋁、氮化矽和/或碳化矽）製成。具有在0.1至0.0001的範圍內的損耗角正切值的材料提供有用結果，而具有在0.005至0.001的範圍內的低損耗角正切值的材料在合理成本下展現較高性能範圍。電漿阻擋篩網270(1)和陶瓷隔件350兩者的部分設置在接地的升降板材390的一部分的頂部，如圖所示，並且從其獲得機械支撐。升降板材390與電漿阻擋篩網270(1)、陶瓷隔件350和其他上覆結構機械連接，以便使得能夠出於組裝和/或維修目的，將所有此類結構從工件保持器135附近升降。電漿阻擋篩網270(1)穿過接觸升降板材390來電接地。陶瓷隔件350的厚度受控制成在電漿阻擋篩網270(1)與陶瓷隔件350之間留下間隙360，以便確保陶瓷隔件350不會中斷圍繞製程腔室205周邊在方位角方向上電漿阻擋篩網270(1)與升降板材390的連續接觸。
形成低損耗角正切值的材料的陶瓷隔件350和陶瓷泵送內襯370是相對昂貴的（相較例如從具有陶瓷塗層的鋁來製造此類物項），但是減小工件保持器135的邊緣的電場效應，並且當電漿275在製程腔室205內產生時，減少反射RF功率。相較用於相同位置中的等效鋁質部件，取代的陶瓷隔件350和陶瓷泵送內襯370還減少了與離子轟擊有關的污染。陶瓷隔件350和陶瓷泵送內襯370的使用因此促成電漿以及製程的穩定性，並且減少污染。電場在圖6中使用點線箭頭示意性地例示；初級電場在工件保持器135/工件50與電漿阻擋篩網270(1)之間。使工件保持器135/工件50與電漿阻擋篩網270(1)之間的電場在某個方向上強力且均勻是有利的，因為電場操控各向異性蝕刻所涉及的離子。也就是說，為了清除豎直溝槽的底部的材料，對離子進行操控的電場需要對應為豎直的。較弱的場存在於工件保持器135與接地的升降板材390之間，穿過陶瓷隔件350和陶瓷泵送內襯370。這些電場是由將插置在工件保持器135與升降板材390之間的陶瓷隔件350和陶瓷泵送內襯370的介電材料減弱。減弱工件保持器135邊緣處的側向電場具有兩個益處；(1)電場的方向性以及因此蝕刻的方向性維持朝向工件50邊緣外部，並且(2)較弱電場產生比較高的場更少的濺射。
圖7以截面圖示意性地示出根據一個實施方式的電漿處理系統400的主要元件。電漿處理系統400是圖1的電漿處理單元130的實例。類似圖2的電漿處理系統200，電漿處理系統400使得能夠在工件50的相鄰位置形成電漿275。電漿處理系統400包括就結構和功能來說與圖2的電漿處理系統200中出現的那些相同的許多部件，不同之處在於，缺少電漿處理系統200中示出的任選的氣體分配設備260。另外，電漿處理系統400包括與圖2中示出的等效物項不同配置的電漿阻擋篩網270(2)以及在擴散器235與電漿阻擋篩網270(2)之間的絕緣體280。
類似電漿處理系統200，絕緣體230使RF電極215（包括面板材225）與保持電接地的擴散器235電氣絕緣。擴散器235用作背對RF電極215的面板材225的第二電極。面板材225、擴散器235和絕緣體230的表面限定第一電漿產生空腔，當電漿源氣212存在並且RF能量穿過RF電極215提供在面板材225處時，在該第一電漿產生空腔中產生第一電漿245。電漿阻擋篩網270(2)也保持成電接地的，但是絕緣體280允許電漿阻擋篩網270(2)與擴散器235隔離以提供獨立RF接地回程路徑。電漿阻擋篩網270(2)內的孔隙被配置成類似電漿阻擋篩網270(1)中的那些，也就是說，它們形成類似於圖3和圖4中示出的那些孔隙的形狀，具有類似尺寸，使得上游電漿產物可以穿過，但是有源電漿275受到擴散器235以及其他上游部件阻擋。
本文中的實施方式可以重新佈置，並且可以形成各種形狀。例如，圖2和圖7中示出的許多部件（諸如RF電極215、擴散器220和235、氣體分配設備260、面板材225、絕緣體230、電漿阻擋篩網270等等）可以是繞中心軸基本徑向對稱的，以便處理作為工件50的圓形半導體晶圓。然而，此類特徵可為符合用作電漿源的任何形狀。用於將氣體和/或電漿產物引入和分配的特徵（諸如擴散器、面板材等等）的準確數量和放置方式也可改變。此外，以類似於包括氣體通道250的氣體分配設備260在來自於電漿245的電漿產物進入製程腔室205時將氣體155(2)添加到該電漿的方式，電漿處理系統200的其他部件可配置成在氣體穿過系統到達製程腔室205時，將氣體155添加到其他氣體和/或電漿產物或與它們混合。還如圖2、圖6和圖7表明，許多系統部件將會在電漿處理單元中心區域內形成穿孔平面形狀，以便將均勻製程條件提供到平面工件，但是出於結構目的，也可在電漿處理單元邊緣處形成不同形狀，諸如凸緣、厚度變化、實心無孔表面等等。中心區域範圍在一個實施方式中可以改變，以便適應不同工件大小，尤其但不限於作為工件的晶圓的直徑。當工件是晶圓時，中心區域通常將會涵蓋延伸每個此類系統部件的半徑至少一半的區域。
具體細節在以上描述中給出，以便提供對實施方式的透徹理解。然而，應當理解，實施方式可在沒有這些具體細節的情況下實踐。例如，所熟知的製程、結構和技術可示出為沒有不必要的細節，以便避免模糊實施方式。雖然本公開的原理在上文中已經結合特定的裝置和方法進行描述，但是應當清楚理解，這個描述僅以舉例方式進行，而不限制本公開的範圍。
應當瞭解，所示佈置僅是示例性的；其他實施方式可在構造方面大為不同，包括引入源氣體量、電極和絕緣體佈置方式、電漿和/或電漿產物產生後的處理方式和溝槽在絕緣體中形成方式。預見的是，本文公開的技術和裝置可適用於這些以及其他佈置，其中導電材料在使用過程中堆積，並且由此形成漏泄和/或排放路徑。
如本文以及隨附的權利要求書中所用，單數形式「一個」、「一種」和「該」包括複數指代對象，除非上下文清楚地另外指明。因此，例如，提及「一種製程」包括多種此類製程，並且提及「電極」包括指稱本領域的技術人員所已知的一個或多個電極以及其等效物，等等。另外，術語「包括」和「包含」在用於本說明書以及隨附的權利要求書時，旨在指明存在陳述特徵、整數、部件或步驟，但是它們並不排除一個或多個其他特徵、整數、部件、步驟、動作或分組的存在或添加。
50‧‧‧工件
100‧‧‧處理系統
110‧‧‧外殼
115‧‧‧晶圓介面
120‧‧‧使用者介面
130‧‧‧電漿處理單元
132‧‧‧電漿源
134‧‧‧製程腔室
135‧‧‧工件保持器
137‧‧‧擴散器板材
140‧‧‧控制器
150‧‧‧電源
155‧‧‧氣體
155(1)‧‧‧氣體
155(2)‧‧‧氣體
160‧‧‧真空
165‧‧‧射頻（RF）發生器
170‧‧‧外部電源
200‧‧‧電漿處理系統
201‧‧‧中心軸
202‧‧‧徑向方向
203‧‧‧方位方向
205‧‧‧製程腔室
210‧‧‧電漿源
215‧‧‧RF電極
220‧‧‧第一氣體擴散器
225‧‧‧面板材
230‧‧‧絕緣體
235‧‧‧擴散器
245‧‧‧電漿
250‧‧‧氣體通道
260‧‧‧氣體分配設備
265‧‧‧氣室空腔
268‧‧‧平面表面
269‧‧‧平面表面
270‧‧‧電漿阻擋篩網
270'‧‧‧電漿阻擋篩網
270(1)‧‧‧電漿阻擋篩網
270(2)‧‧‧電漿阻擋篩網
271‧‧‧孔隙
271'‧‧‧孔隙
272‧‧‧第一孔隙部分
273‧‧‧第二孔隙部分
273'‧‧‧第二孔隙部分
275‧‧‧電漿
276‧‧‧上部部分
277‧‧‧下部部分
280‧‧‧絕緣體
300‧‧‧圖
310‧‧‧空心圓圈資料
320‧‧‧實心三角資料
330‧‧‧實心矩形資料
350‧‧‧陶瓷隔件
360‧‧‧間隙
370‧‧‧陶瓷泵送內襯
390‧‧‧升降板材
400‧‧‧電漿處理系統
A‧‧‧區域
H1‧‧‧豎直深度
H2‧‧‧豎直深度
H3深度
W1‧‧‧較短側向尺寸
W2‧‧‧較小側向尺寸
參考與下文所簡述的附圖結合的以下具體實施方式，可理解本公開，其中相同元件符號在若干附圖中指示類似部件。應當注意，出於清楚例示目的，附圖中的某些元件可不按比例來繪製。特定物項實例可用尾碼有括弧內的第二數位的數位指稱（例如，電漿阻擋篩網270(1)、270(2)等等），而未尾碼短劃線的數字是指任何此類物項（例如，電漿阻擋篩網270）。在示出多個物項的情況下，為了清楚例示，僅對一些實例加上標籤。
圖1示意性地示出根據一個實施方式的電漿處理系統的主要元件。
圖2以截面圖示意性地示出根據一個實施方式的電漿處理系統的主要元件。
圖3示出根據一個實施方式的作為圖2的電漿處理系統的部分的電漿阻擋篩網的一部分。
圖4示出根據一個實施方式的另一電漿阻擋篩網的一部分。
圖5是根據一個實施方式的對與電漿阻擋篩網的第二孔隙部分的較短側向尺寸的選擇有關的資料建模的圖。
圖6以放大圖示意性地示出圖2中指出的區域。
圖7以截面圖示意性地示出根據一個實施方式的另一電漿處理系統的主要元件。
另外實施方式以及特徵在以下描述中部分闡明，並且部分在查閱本說明書後將對技術人員為部分顯而易見的，或者可通過本發明的實踐來瞭解。本發明的特徵以及優點可借助於本說明書中描述的器械、組合和方法來實現和達成。
50‧‧‧工件
135‧‧‧工件保持器
155(1)‧‧‧氣體
155(2)‧‧‧氣體
200‧‧‧電漿處理系統
201‧‧‧中心軸
202‧‧‧徑向方向
203‧‧‧方位方向
205‧‧‧製程腔室
210‧‧‧電漿源
215‧‧‧RF電極
220‧‧‧第一氣體擴散器
225‧‧‧面板材
230‧‧‧絕緣體
235‧‧‧擴散器
245‧‧‧電漿
250‧‧‧氣體通道
260‧‧‧氣體分配設備
265‧‧‧氣室空腔
270(1)‧‧‧電漿阻擋篩網
275‧‧‧電漿
A‧‧‧區域

Claims (20)

  1. 一種電漿處理裝置，該電漿處理裝置包括： 一第一電漿源，該第一電漿源產生第一電漿產物； 一第一平面電極，該第一平面電極包括限定從其中穿過的多個第一孔隙的一第一板材，該第一平面電極的第一側設置為相對於該第一電漿源，使得該第一電漿產物從該第一電漿源離開，穿過該多個第一孔隙到達該第一平面電極的一第二側； 一氣體分配設備，該氣體分配設備包括限定從其中穿過的多個第二孔隙的一第二板材，該氣體分配設備的一第一側設置為面對該第一平面電極的第二側，使得該第一電漿產物繼續穿過該多個第二孔隙到達該氣體分配設備的一第二側； 一電漿阻擋篩網，該電漿阻擋篩網包括限定從其中穿過的多個第四孔隙的一第三板材，該電漿阻擋篩網的一第一側設置為面對該氣體分配設備的第二側，使得該第一電漿產物穿過該多個第四孔隙到達該電漿阻擋篩網的一第二側；以及 一卡盤，該卡盤面對該電漿阻擋篩網的該第二側，該電漿阻擋篩網與該卡盤在其間限定一製程腔室； 其中該第四孔隙具有一足夠小的大小，以便阻擋該製程腔室中產生的一電漿到達該氣體分配設備。
  2. 如請求項1所述的裝置，其中該電漿阻擋篩網所限定的該第四孔隙中的每一個的特徵為： 一第一孔隙部分，該第一孔隙部分從該電漿阻擋篩網的該第一側延伸，並且限定一孔軸以及垂直于該孔軸的一第一孔隙較短側向尺寸，以及 一第二孔隙部分，該第二孔隙部分從該電漿阻擋篩網的該第二側延伸，並且限定約0.05英寸或更小的一第二孔隙較短側向尺寸，並且該第二孔隙較短側向尺寸小於該第一孔隙較短側向尺寸； 其中該第一孔隙部分和該第二孔隙部分軸向鄰接，以從該電漿阻擋篩網的該第一側延伸到該第二側，從而形成該第四孔隙。
  3. 如請求項2所述的裝置，其中該電漿阻擋篩網在該電漿阻擋篩網面對著該卡盤的一區域內限定每平方英寸至少10個該第四孔隙。
  4. 如請求項2所述的裝置，其中： 該第二孔隙部分限定其鄰接該第一孔隙部分處的該第二孔隙較短側向尺寸； 該第二孔隙部分的至少一部分從該孔軸向外朝該第二側張開；並且 至少該電漿阻擋篩網的該第二側、以及該第二孔隙部分的表面包括一陶瓷塗層。
  5. 如請求項1所述的裝置，其中至少該電漿阻擋篩網被保持為電接地的，並且圍繞該製程腔室的一周邊與支撐結構電連接；並且 該卡盤可切換地連接至一射頻（RF）功率源或從射頻（RF）功率源脫離，使得當連接該RF功率源時，在該製程腔室內產生該電漿。
  6. 如請求項5所述的裝置，其進一步包括一陶瓷環，該陶瓷環圍繞該製程腔室的該周邊設置，使得該陶瓷環插置在該卡盤與該支撐結構之間。
  7. 如請求項6所述的裝置，其中： 該電漿阻擋網篩中的部分以及該陶瓷環設置在該支撐結構的一部分的頂部，並且 該陶瓷環的厚度受控制以在該陶瓷環與該電漿阻擋網篩之間提供一間隙。
  8. 如請求項6所述的裝置，其中該陶瓷環包含具有在0.0001至0.1的範圍內的一損耗角正切值的一材料。
  9. 如請求項1所述的裝置，其中該氣體分配設備還進一步限定一氣體通道，該氣體通道從該氣體分配設備一周邊延伸到限定在該氣體分配設備的該第二側而不在該氣體分配設備的該第一側的多個第三孔隙，使得引入該氣體通道中的一製程氣體出現在該氣體分配設備的該第二側上。
  10. 一種電漿處理腔室，該電漿處理腔室包括： 一工件保持器；以及 一平面電極； 該平面電極跨其一中心區域限定以一定厚度分開的平行且相對的第一平面表面和第二平面表面，該第二平面表面設置為面對該工件夾具工件保持器， 該平面電極限定從其中穿過的多個孔隙，其中該孔隙中的每者的特徵為： 一第一孔隙部分，該第一孔隙部分限定一孔軸以及垂直于該孔軸的一第一孔隙較短側向尺寸，該第一孔隙部分從該第一平面表面延伸穿過該厚度的至少一半，以及 一第二孔隙部分，該第二孔隙部分： 限定一第二孔隙較短側向尺寸，該第二孔隙較短側向尺寸小於該第一孔隙較短側向尺寸，並且 從該第二平面表面延伸穿過該厚度的不到一半； 其中該第一孔隙部分和該第二孔隙部分軸向鄰接，以使該孔隙為從該第一平面表面至該第二平面表面的一連續孔隙。
  11. 如請求項10所述的電漿處理腔室，其中： 該厚度在0.15至1.0英寸的範圍內； 該第一孔隙部分限定在0.02至0.25英寸的範圍內的該第一孔隙較短側向尺寸，並且 該第二孔隙部分限定垂直于該孔軸的0.01至0.05英寸的該第二孔隙較短側向尺寸。
  12. 如請求項10所述的電漿處理腔室，其中： 該平面電極包含鋁，並且 至少該第二平面表面、以及該第二孔隙部分的表面包括包含氧化釔的一塗層。
  13. 如請求項12所述的電漿處理腔室，其中該孔隙的每一個的該第二孔隙部分限定： 一上部部分，該上部部分軸向鄰接該第一孔隙部分，以及 一下部部分，該下部部分軸向鄰接該上部部分，並且從該孔軸向外朝該第二平面表面張開。
  14. 如請求項13所述的電漿處理腔室，其中： 該上部部分是圓柱形的，穿過作為該第二孔隙較短側向尺寸的一直徑表徵，並且軸向鄰接該第一孔隙部分； 該下部部分是圓錐形的，圍繞該孔軸對稱，並且軸向鄰接該圓柱形的上部部分；並且 在該圓錐形的下部部分中，該平面電極的一表面在該圓錐形的下部部分鄰接該圓柱形的上部部分的每一個點處偏離該孔軸成25度至65度的一角度，使得該下部部分的一側向尺寸在該圓錐形的下部部分鄰接該第二平面表面的位置處大於該圓柱形的上部部分的該直徑。
  15. 如請求項14所述的電漿處理腔室，其中該上部部分的一深度與該直徑的一深寬比在0.5至4.0的範圍內。
  16. 如請求項10所述的電漿處理腔室，其中： 該平面電極是基本盤形的，並且其特徵為限定一中心軸和一半徑； 該平面電極的中心區域限定為該平面電極的在距該中心軸的一半半徑範圍內的部分；並且 該平面電極在該中心區域內限定每平方英寸至少10個該孔隙。
  17. 如請求項16所述的電漿處理腔室，其中該平面電極在該中心區域內限定每平方英寸至少30個該孔隙。
  18. 一種電漿處理裝置，該電漿處理裝置包括： 一氣源； 一第一平面電極，該第一平面電極包括限定從其中穿過的多個第一孔隙的一第一板材，該第一平面電極的第一側設置為相對於該氣源，使得來自於該氣源的氣體穿過該多個第一孔隙到達該第一平面電極的一第二側； 一第二平面電極，該第二平面電極包括限定從其中穿過的多個第二孔隙的一第二板材，該第二平面電極的一第一側設置為面對該第一平面電極的該第二側； 一第一電源，該第一電源將射頻（RF）功率耦合在該第一平面電極和該第二平面電極上，其中 一第一電漿是用該氣體在該第一平面電極與該第二平面電極之間產生的，並且 來自於該第一電漿的第一電漿產物穿過該多個第二孔隙到達該第二平面電極的一第二側； 一電漿阻擋篩網，該電漿阻擋篩網包括限定從其中穿過的多個第三孔隙的一第三板材，該電漿阻擋篩網的一第一側設置為面對該第二平面電極的該第二側，使得該第一電漿產物穿過該多個第三孔隙到達該電漿阻擋篩網的一第二側； 一卡盤，該卡盤面對該電漿阻擋篩網的該第二側，從而在該電漿阻擋篩網與該卡盤之間限定一製程腔室；以及 一第二電源，該第二電源將射頻（RF）功率耦合在該電漿阻擋篩網和該卡盤上，其中一第二電漿是用該氣體在該電漿阻擋篩網和該卡盤之間產生的。
  19. 如請求項18所述的裝置，其中該電漿阻擋篩網所限定的該第三孔隙中的每一個的特徵為： 一第一孔隙部分，該第一孔隙部分從該電漿阻擋篩網的該第一側延伸，並且限定一孔軸以及垂直于該孔軸的一第一孔隙較短側向尺寸，以及 一第二孔隙部分，該第二孔隙部分從該電漿阻擋篩網的該第二側延伸，並且限定約0.05英寸或更小的一第二孔隙較短側向尺寸，並且該第二孔隙較短側向尺寸小於該第一孔隙較短側向尺寸； 其中該第一孔隙部分和該第二孔隙部分軸向鄰接，以從該電漿阻擋篩網的該第一側延伸到該第二側，從而形成該第三孔隙。
  20. 如請求項19所述的裝置，其中： 該第二孔隙部分限定其鄰接該第一孔隙部分處的該第二孔隙較短側向尺寸； 該第二孔隙部分的至少一部分從該孔軸向外朝該電漿阻擋篩網的該第二側張開；並且 至少該電漿阻擋篩網的該第二側、以及該第二孔隙部分的表面包括一陶瓷塗層。
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