TWI776107B - 具有導電電極的陶瓷噴頭 - Google Patents

具有導電電極的陶瓷噴頭 Download PDF

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TWI776107B
TWI776107B TW108145467A TW108145467A TWI776107B TW I776107 B TWI776107 B TW I776107B TW 108145467 A TW108145467 A TW 108145467A TW 108145467 A TW108145467 A TW 108145467A TW I776107 B TWI776107 B TW I776107B
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showerhead
annular channel
conductive material
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拉克希瓦 卡利塔
壽南 朴
迪米奇 路柏曼斯基
天發 陳
樂琪 羅
沙拉傑特 辛
泰源 金
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美商應用材料股份有限公司
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Abstract

示例性半導體處理腔室噴頭可包括介電板，其特徵在於第一表面和與第一表面相對的第二表面。介電板可界定穿過介電板的複數個孔。介電板可在介電板的第一表面中界定第一環形通道，且第一環形通道可圍繞複數個孔延伸。介電板可在介電板的第一表面中界定第二環形通道。第二環形通道可從第一環形通道徑向向外形成。噴頭還可包括嵌入在介電板內並圍繞複數個孔延伸而不會被孔曝露的導電材料。導電材料可在第二環形通道處曝露。

Description

具有導電電極的陶瓷噴頭
本技術關於半導體處理和配備。更具體地，本技術關於可用作系統電極的陶瓷腔室部件。
藉由在基板表面上產生複雜圖案化的材料層的處理使得積體電路成為可能。在基板上生產圖案化材料需要受控的方法以移除曝露的材料。化學蝕刻用於多種目的，包括將光阻中的圖案轉移到下面的層中、變薄層或變薄表面上已經存在的特徵的橫向尺寸。通常期望具有比另一種材料更快地蝕刻一種材料的蝕刻處理，從而促進（例如）圖案轉移處理。據說這種蝕刻處理對第一材料是選擇性的。由於材料、電路和處理的多樣性，已經開發出對多種材料具有選擇性的蝕刻處理。
基於處理中使用的材料，蝕刻處理可稱為濕式或乾式。例如，與其他介電質和材料相比，濕式蝕刻可優先移除一些氧化物介電質。但是，濕式處理可能難以穿透某些受約束的溝槽，並且有時可能會使殘留材料變形。在基板處理區域內形成的電漿中產生的乾式蝕刻可穿透更多受約束的溝槽，並表現出較小的精細殘留結構變形。然而，電漿可能會經由在他們放電時所產生的電弧和經由轟擊和蝕刻系統部件而損壞基板或腔室部件。
因此，存在有可用以生產高品質裝置和結構的改進的系統和方法的需求。該等和其他需求由本技術解決。
示例性半導體處理腔室噴頭可包括介電板，其特徵在於第一表面和與第一表面相對的第二表面。介電板可界定穿過介電板的複數個孔。介電板可在介電板的第一表面中界定第一環形通道，且第一環形通道可圍繞複數個孔延伸。介電板可在介電板的第一表面中界定第二環形通道。第二環形通道可從第一環形通道徑向向外形成。噴頭還可包括嵌入在介電板內並圍繞複數個孔延伸而不會被孔曝露的導電材料。導電材料可在第二環形通道處曝露。
在一些實施例中，第二環形通道可在介電板內界定到比第一環形通道更大的深度。導電材料可在介電板內以大於第一環形通道的深度的深度延伸通過介電板。導電材料可被第二環形通道曝露而不被第一環形通道曝露。噴頭還可包括座落於第二環形通道內且配置成將導電材料用作電極的RF墊圈。噴頭還可包括座落於第一環形通道內的彈性體元件。導電材料可包括越過由第一環形通道界定的噴頭的內部區域而延伸的箔或網。導電材料可包括從噴頭的內部區域延伸到第二環形通道的複數個突片。
本技術的一些實施例還可涵蓋半導體處理腔室噴頭，半導體處理腔室噴頭可包括板，板包括第一介電材料。板的特徵在於第一表面和與第一表面相對的第二表面。板可界定穿過板的複數個孔。噴頭可包括設置在板的第一表面上的導電材料，且導電材料可保持在距複數個孔的每個孔的第一徑向距離處。噴頭還可包括塗層，塗層包括第二介電材料。塗層可越過導電材料延伸，且塗層可保持在距複數個孔的每個孔的第二徑向距離處。第二徑向距離可小於第一徑向距離。
在一些實施例中，導電材料可在噴頭的徑向邊緣處曝露，以提供噴頭的電耦合。噴頭可在板的第一表面中在複數個孔的徑向外側，且在曝露的導電材料的徑向內側在噴頭的徑向邊緣處界定環形通道。塗層可為或包括多層塗層。第一介電材料和第二介電材料可為或包括不同的材料。導電材料可為或包括穿孔的箔或網。
本技術的一些實施例可涵蓋具有蓋和基板支撐件的半導體處理腔室。腔室還可包括位於蓋和基板支撐件之間的噴頭。第一電漿區域可界定在噴頭和蓋之間，且第二電漿區域可界定在噴頭和基板支撐件之間。蓋和基板支撐件可各自與產生電漿的功率源耦合。噴頭可與接地電耦合，且噴頭可包括板，板包括第一介電材料。板的特徵在於第一表面和與第一表面相對的第二表面。板可界定穿過板的複數個孔，且噴頭可在板的第一表面中在複數個孔的徑向外側界定第一環形通道。噴頭還可包括與板結合的導電材料。導電材料的曝露可限制在第一環形通道的徑向外側的區域。
在一些實施例中，板可在板的第一表面中界定第二環形通道。第二環形通道可形成為從第一環形通道徑向向外，且導電材料可被嵌入板內並被第二環形通道曝露。第二環形通道可在板內界定到比第一環形通道更大的深度。導電材料可在板內以大於第一環形通道的深度的深度延伸通過板。導電材料可被第二環形通道曝露而不被第一環形通道曝露。處理腔室還可包括座落於第二環形通道內並被配置成將導電材料電耦合至接地的RF墊圈。腔室還可包括座落於第一環形通道內的彈性體元件。導電材料可設置在板的第一表面上，且可將導電材料保持在距複數個孔的每個孔的第一徑向距離處。噴頭還可包括可為第二介電材料的塗層。塗層可越過導電材料延伸，且塗層可保持在距複數個孔的每個孔的第二徑向距離處。第二徑向距離可小於第一徑向距離。塗層可為或包括多層塗層。導電材料可為或包括穿孔的箔或網。
這樣的技術可提供相較於傳統系統和技術的許多益處。例如，在電漿處理期間，噴頭可用作接地電極。另外，噴頭可在電漿形成期間限制用電漿物種對金屬的轟擊。結合以下的實施方式和附加的圖式更詳細地描述了該等和其他實施例以及它們的許多優點和特徵。
乾式蝕刻處理可在處理區域的某些區域內產生電漿物種。不同的電漿區域可包括本端區域或鄰近基板表面的區域，以及遠端區域（諸如在處理腔室的流體耦合但物理上分開的部分中）。許多處理腔室包括許多不同的材料部件，該等材料部件界定了腔室內的內部空間。例如，可併入金屬部件以用作腔室內的電極，諸如用於電容耦合電漿操作。另外，可包括介電材料以分開電極或用作材料塗層。
可用作電漿電極或可更一般地輔助電漿物種的流動的噴頭可接觸及/或以其他方式曝露於電漿流出物。許多蝕刻劑材料可能會與該等電極相互作用，從而剝落塗層或轟擊曝露區域。作為一個非限制性示例，在某些本端或晶圓級電漿操作中，噴頭或歧管可用作接地電極，以在基板處理區域中產生電漿，其中基板支撐件或某些其他部件可用作產生電漿的電極。用作接地電極的噴頭可能會受到電漿物種的轟擊，這在曝露的金屬上可能會導致金屬物種污染基板，這可能導致操作期間發生短路。因此，一些傳統設計可例行地更換噴頭或用可抵抗轟擊的材料塗佈噴頭。
在某些傳統設計中使用的塗層可能足以抵抗轟擊或侵蝕，但可能不足以抵抗與電漿流出物物種的化學反應，這可能導致塗層腐蝕。因此，該等部件可能需要例行地重新塗佈或更換。此外，許多噴頭包括許多孔，用於通過腔室輸送物種。若塗層不能完全塗佈每個孔側壁和所有曝露的表面，則可遠端產生的電漿物種可能會引起與本端產生的電漿物種相同的問題。此外，若孔不夠小，則本端電漿可能會通過該等孔洩漏，從而損壞其他上游部件。然而，當形成足夠小的孔時，許多視線塗佈裝置不能在孔內提供完整的塗層。因此，許多傳統的噴頭不能長期、穩定地用作電極。
本技術藉由將介電質或陶瓷材料用於噴頭而克服了該等問題。通常，陶瓷材料由於其介電性質而不能用作電極。本技術在陶瓷內結合了一或多種導電材料，這允許部件用作電極。導電材料可包含在陶瓷或介電材料內在曝露於電漿的區域中，這可防止上述污染或轟擊問題。藉由將特定的材料用於部件，可製造出具有減小孔尺寸的噴頭，其可完全覆蓋導電材料。另外，材料可抵抗電漿曝露引起的侵蝕及/或腐蝕。
儘管其餘揭露內容將例行地利用所揭露的技術來識別具體的蝕刻處理，但是將容易理解系統和方法同樣適用於可能在所描述的腔室或其他腔室中發生的沉積和清潔處理以及腔室。因此，技術不應被視為僅限制於與任何特定蝕刻處理或腔室一起使用的技術。此外，儘管描述了示例性腔室以為本技術提供基礎，但是應該理解本技術實際上可應用於可允許所描述的操作的任何半導體處理腔室。
第1圖顯示了根據實施例的沉積、蝕刻、烘烤和固化腔室的處理系統100的一個實施例的頂部平面圖。在圖式中，一對前開式晶圓傳送盒（FOUP）102供應具有各種尺寸的基板，該等基板在置放到基板處理腔室108a-108f的一個中之前，由機械臂104接收並置放在低壓保持區域106中，基板處理腔室108a-108f定位在串聯部分109a-c中。第二機械臂110可用以將基板晶圓從保持區域106傳送到基板處理腔室108a-f並返回。每個基板處理腔室108a-f可裝配成執行許多基板處理操作，除了循環層沉積（CLD）、原子層沉積（ALD）、化學氣相沉積（CVD）、物理氣相沉積（PVD）、蝕刻、預清洗、除氣、定向和其他基板處理之外，尚包括於此所述的乾式蝕刻處理。
基板處理腔室108a-f可包括一或多個系統部件，用於在基板晶圓上沉積、退火、固化及/或蝕刻介電膜。在一種配置中，可使用兩對處理腔室（如，108c-d和108e-f）以在基板上沉積介電材料，且可使用第三對處理腔室（如，108a-b）以蝕刻沉積的介電質。在另一種配置中，所有三對腔室（如，108a-f）可配置成蝕刻基板上的介電膜。所描述的處理中的任一個或多個可在與不同實施例中所示的製造系統分離的（多個）腔室中實施。將理解系統100可構想用於介電膜的沉積、蝕刻、退火和固化腔室的其他配置。
第2A圖顯示了示例性處理腔室系統200的橫截面圖，處理腔室系統200在處理腔室內具有分隔的電漿產生區域。在膜蝕刻（如，氮化鈦、氮化鉭、鎢、矽、多晶矽、氧化矽、氮化矽、氮氧化矽、碳氧化矽等）期間，處理氣體可通過氣體入口組件205流入第一電漿區域215中。遠端電漿系統（RPS）201可任選地包括在系統中，且可處理第一氣體，第一氣體接著行進通過氣體入口組件205。入口組件205可包括兩個或更多個不同的氣體供應通道，其中第二通道（未顯示）可繞過RPS 201（若有的話）。
顯示了並可根據實施例分別包括冷卻板203、面板217、離子抑制器223、噴頭225和其上設置有基板255的基板支撐件265。在一些實施例中，冷卻板和面板可用作蓋組件的態樣。基座265可具有熱交換通道，熱交換流體流經熱交換通道以控制基板的溫度，熱交換流體可在處理操作期間被操作以加熱及/或冷卻基板或晶圓。基座265的晶圓支撐盤（其可包括鋁、陶瓷或其組合）也可使用嵌入式電阻加熱器元件而被電阻加熱，以實現相對較高的溫度，諸如從高達或約100℃到高於或約1100℃。
面板217可為金字塔形的、圓錐形的、或具有從狹窄的頂部擴展到寬廣的底部的另一類似結構。如圖所示，面板217可另外是平坦的，並包括用以分配處理氣體的複數個穿通通道。取決於RPS 201的使用，產生電漿的氣體及/或激發電漿的物種可穿過在面板217中的複數個孔，如第2B圖所示，用於更均勻地輸送到第一電漿區域215中。
示例性配置可包括使氣體入口組件205打開到藉由面板217而與第一電漿區域215隔開的氣體供應區域258中，使得氣體/物種流過面板217中的孔進入第一電漿區域215中。可選擇結構和操作特徵以防止電漿從第一電漿區域215大量回流到供應區域258、氣體入口組件205和流體供應系統210中。面板217（或腔室的導電頂部）和噴頭225顯示具有位於特徵之間的絕緣環220，這允許相對於噴頭225及/或離子抑制器223將AC電位施加到面板217。絕緣環220可位於面板217和噴頭225及/或離子抑制器223之間，使得能夠在第一電漿區域中形成電容耦合電漿（CCP）。擋板（未顯示）可另外位於第一電漿區域215中，或者以其他方式與氣體入口組件205耦合，以影響流體通過氣體入口組件205進入區域中的流動。
離子抑制器223可包含板或其他幾何形狀，其在整個結構中界定了複數個孔，該等孔配置成抑制離子帶電物種從第一電漿區域215遷移出來，同時允許不帶電的中性或自由基物種通過離子抑制器223進入在抑制器和噴頭之間的活化氣體輸送區域。在實施例中，離子抑制器223可包含具有各種孔配置的穿孔板。該等不帶電荷的物種可包括高反應性物種，其以較低反應性的載氣通過孔而運輸。如上所述，可減少離子物種通過孔的遷移，且在某些情況下可完全抑制。控制通過離子抑制器223的離子物種的量可有利地提供對與下面的晶圓基板接觸的氣體混合物的增加控制，這繼而可增加對氣體混合物的沉積及/或蝕刻特性的控制。例如，調整氣體混合物的離子濃度可顯著改變其蝕刻選擇性，如，SiNx：SiOx蝕刻率、Si：SiOx蝕刻率等。在執行沉積的替代實施例中，它也可改變用於介電材料的從保形到可流動類型的沉積的平衡。
離子抑制器223中的複數個孔可配置成控制活化氣體（亦即，離子，自由基及/或中性物種）穿過離子抑制器223。例如，可控制孔的深寬比，或孔的直徑比長度，及/或孔的幾何形狀，以減少通過離子抑制器223的活性氣體中的帶電離子物種的流動。離子抑制器223中的孔可包括面對電漿激發區域215的錐形部分和面對噴頭225的圓柱形部分。圓柱形部分可經調整形狀和尺寸以控制通到噴頭225的離子物種的流動。也可將可調節的電偏壓施加到離子抑制器223上，作為控制離子物種流過抑制器的附加手段。
離子抑制器223可起到減少或消除從電漿產生區域行進到基板的離子帶電物種的量的作用。不帶電的中性和自由基物種仍可通過離子抑制器中的開口與基板反應。應當注意在實施例中可不執行完全消除圍繞基板的反應區域中的離子帶電物種。在某些情況下，離子物種旨在到達基板以便執行蝕刻及/或沉積處理。在該等情況下，離子抑製器可幫助將反應區域中離子物種的濃度控制在有助於處理的位準。
噴頭225與離子抑制器223結合可允許存在於第一電漿區域215中的電漿避免直接激發在基板處理區域233中的氣體，同時仍允許被激發的物種從腔室電漿區域215行進到基板處理區域233中。以此方式，腔室可配置成防止電漿接觸正被蝕刻的基板255。這可有利地保護在基板上圖案化的各種複雜結構和膜，若它們直接與所產生的電漿接觸，則它們可能被損壞、移位或以其他方式翹曲。另外，當允許電漿接觸基板或接近基板位準時，氧化物物種蝕刻的速率可增加。因此，若材料的曝露區域是氧化物，則可藉由使電漿遠離基板來進一步保護此材料。
處理系統可進一步包括與處理腔室電耦合的功率源240，以向面板217、離子抑制器223、噴頭225及/或基座265提供電功率，以在第一電漿區域215或處理區域233中產生電漿。取決於所執行的處理，功率供應器可配置成向腔室輸送可調節的功率量。該配置可允許在正在執行的處理中使用可調諧的電漿。與通常存在有開或關功能的遠端電漿單元不同，可調諧的電漿可配置成向電漿區域215輸送特定量的功率。這又可允許發展特定的電漿特性，使得前驅物可以特定方式解離，以增強由該等前驅物所產生的蝕刻輪廓。
可在噴頭225之上方的腔室電漿區域215或噴頭225之下方的基板處理區域233任一者中點燃電漿。電漿可存在於腔室電漿區域215中，以從（例如）含氟前驅物或其他前驅物的流入中產生自由基前驅物。可將通常在射頻（RF）範圍中的AC電壓施加在處理腔室的導電頂部（諸如面板217）和噴頭225及/或離子抑制器223之間，以在沉積期間點燃腔室電漿區域215中的電漿。RF功率供應器可生成13.56MHz的高RF頻率，但也可單獨生成其他頻率或也可與13.56 MHz頻率組合生成其他頻率。
第 2B 圖 顯示了影響通過面板217的處理氣體分佈的特徵的詳細圖253。在第2A和2B圖中，面板217、冷卻板203和氣體入口組件205相交以界定氣體供應區域258，處理氣體可從氣體入口205輸送到氣體供應區域258中。氣體可填充氣體供應區域258並通過面板217中的孔259而流到第一電漿區域215。孔259可配置成以基本單向的方式引導流動，使得處理氣體可流入處理區域233中，但是可在穿過面板217之後部分或完全防止其回流到氣體供應區域258中。
在處理腔室部分200中使用的氣體分配組件（諸如噴頭225）可被稱為雙通道噴頭（DCSH），並且在第3圖中所描述的實施例中另外進行了詳細描述。雙通道噴頭可提供允許蝕刻劑在處理區域233之外側的分離的蝕刻處理，以提供在被傳送到處理區域之前與腔室部件之間及彼此之間有限的相互作用。
噴頭225可包括上板214和下板216。板可彼此耦接以在板之間界定容積218。板的耦接可使得提供穿過上板和下板的第一流體通道219，及穿過下板216的第二流體通道221。形成的通道可配置成提供僅經由第二流體通道221從容積218穿過下板216的流體通道，且第一流體通道219可與在板和第二流體通道221之間的容積218流體隔離。可經由氣體分配組件225的側面流體地接近容積218。
第 3 圖 是根據實施例的與處理腔室一起使用的噴頭325的底視圖。噴頭325可對應於第2A圖中所示的噴頭225。顯示第一流體通道219的圖的通孔365可具有複數個形狀和配置，以便控制並影響通過噴頭225的前驅物的流動。顯示第二流體通道221的圖的小洞375可基本上均勻地分佈在噴頭的表面上，甚至在通孔365之間，並且可幫助前驅物離開噴頭時提供比其他配置更均勻的混合。
轉向第 4 圖 顯示了根據本技術的一些實施例的用於製造噴頭的方法400中的示例性操作。如上所述，在電漿操作期間可用作電極的一些噴頭或腔室部件（包括電漿產生電極或接地電極）可由陶瓷或介電材料形成，並且可包括與介電質結合或在介電質內的導電材料。貫穿本揭露書所討論的噴頭可用作先前描述的任何部件，包括面板、離子抑制器、氣體分配組件或如上所述的在腔室中使用的其他噴頭或歧管，或可在電漿操作中利用此部件的任何其他腔室。因此，儘管將顯示某些設計，但是應當理解本技術同樣涵蓋許多不同的配置。
在一些實施例中，在形成操作期間，導電材料可結合或嵌入在噴頭內。因為所描述的一些部件可為陶瓷，所以可在模製操作中形成部件，其中可使用熱及/或壓力來形成部件。例如，燒結可用以從一或多個模製的生坯主體形成噴頭。在用於製造噴頭的方法400的一些實施例中，可在操作405中形成生坯主體，諸如可結合在一起並被燒結以產生示例性噴頭的兩個生坯主體。生坯主體可為盤形的，或其特徵可在於任何其他形狀，以便座落於示例性的處理腔室中。可將生坯主體模製為包括一個或多個塞孔或螺柱，其可允許兩個部件在燒結（firing）操作之前耦接，且生坯主體可包括一些較大的組，或可包括多個螺柱及/或塞孔分佈在主體之間。
一旦形成生坯主體，就可在操作410處將導電材料施加或安置在一個生坯主體上。導電材料可為網、箔或塗層，其被施加到特定區域內的一個或兩個生坯主體，如將於以下所述。導電材料可被預先形成為包括孔，孔可具有與可稍後被鑽入噴頭中以提供氣流的孔類似的圖案。示例性的噴頭可包括數十個、數百個或數千個孔，且因此可執行導電材料的定位以確保孔的形成不會曝露導電材料。如上所述，可曝露於電漿流出物的導電材料可被電漿蝕刻、濺射或以其他方式損壞。因此，可執行示例性的噴頭的開發以明確地限制導電材料在可能發生電漿曝露的區域中的曝露。
例如，可經由完成的陶瓷形成或鑽出孔。因此，可將導電材料形成或施加到生坯主體以包括孔，孔將允許在不曝露導電材料的情況下產生噴頭孔。在一些實施例中，當導電材料位於生坯主體上時，導電材料本身可包括孔。例如，可生產包括要界定的孔的箔。額外的孔可對應於生坯主體的塞孔或螺柱，其可為箔孔提供定位功能以用於後續的機械加工。作為另一個例子，因為生坯主體可被模製，所以塞孔和螺柱可圍繞生坯主體模具分佈以對應於可在其中產生孔的位置，這可限制在燒結操作期間的移位。例如，可將網或箔圍繞螺柱壓配到生坯主體。網尖齒可在螺柱周圍分開，這可允許在模具上均勻地施加導電材料，並限制切割時的鋒利邊緣。
一旦施加了導電材料，就可在操作415中燒結生坯主體以產生噴頭。燒結可包括施加熱及/或壓力以產生陶瓷部件。例如，這種燒結可包括多種操作，包括低溫加熱然後高溫加熱。在形成部件之後，可在操作420中圖案化噴頭，這可在機械加工期間提供孔、通道和其他特徵以產生最終的噴頭。該等產生的噴頭可在噴頭的內部區域中界定多個孔，該等孔可不曝露整個噴頭上包含的導電材料。因此，噴頭既可用作流量分配部件，又可用作電極，同時限制或防止導電材料在腔室處理區域內曝露。
第 5A 圖 顯示了根據本技術的一些實施例的示例性噴頭500的示意性部分頂視平面圖。噴頭可包括介電板505，例如其可為陶瓷，且噴頭還可包括結合的導電材料510。第 5B 圖 顯示了根據本技術的一些實施例的示例性噴頭500的示意性部分橫截面圖，並且可與第5A圖一起考慮，以顯示噴頭的各種特徵。如上所述，噴頭500僅僅是本技術所涵蓋的部件的一種示例性配置。噴頭500顯示了根據本技術可包括在各種噴頭中的特徵，但是無意於限制類似地涵蓋的其他設計。噴頭500可為先前討論的任何歧管，並且可為單件式部件，或者在一些實施例中可為部件的組合之一，以便產生如前所述的氣體分配組件。如前所述，噴頭500可被包括在半導體處理腔室中，或者在本技術的實施例中的任何其他處理腔室或系統中。
如圖所示，介電板505可為藉由以上所討論的方法400或藉由任何其他方法而形成的陶瓷板，並且可包括結合的導電材料510。介電板505可包括第一表面507和第二表面509，第二表面509可相對第一表面507。介電板505可界定穿過板的多個孔515，孔515從第一表面507延伸穿過第二表面509，並可為前驅物提供穿過噴頭的路徑。如上所述，在燒結之後且在導電材料510已被結合之後，可通過噴頭形成孔515。在一些實施例中，孔515可不接觸或曝露導電材料510。如圖所示，導電材料510可在孔515的一些或全部周圍延伸。如第5B圖所示，導電材料510可在每個孔周圍保持間隔或間隙518，以確保孔在形成時不會曝露導電材料。
介電板505可界定一個或多個通道及一個或多個凹入特徵，一個或多個通道及一個或多個凹入特徵可在結合導電材料510之後機械加工。在燒結操作期間，材料的性質和特性可能會變化，這可分佈導電材料、箔或網眼。例如，在燒結之前，可知道介電板內的導電材料510的確切深度。然而，在燒結之後，此位置可能會稍微改變。徑向間隙518可確保在孔形成期間可容納任何橫向運動。然而，因為在一些實施例中，導電材料的厚度可僅為幾百奈米，儘管可使用任何厚度，但是深度的微小變化可能令定位用於電極耦合及用於特徵形成的導電材料產生挑戰。例如，一些示例性的噴頭可包括在第二表面509的內部區域處形成的凹口520。若導電材料510的位置在燒結期間已經偏移，則在形成凹口520時導電材料510可能會無意地曝露出來。本技術可以多種方式執行定位，以限制或防止介電板中的導電材料曝露。
介電板505可在介電板505的第一表面507中界定第一環形通道525。第一環形通道525可圍繞複數個孔515延伸，並可界定噴頭的內部區域526。第一環形通道525可配置成安置O形環或彈性體元件527，以在真空操作期間產生密封。因此，內部區域526可為噴頭500的一部分，其可在腔室內曝露於所執行的任何處理，諸如電漿處理。在一些實施例中，導電材料510可不曝露在內部區域526中的任何地方，包括形成孔515的地方。
因為可將導電材料510作為電極耦合，所以可在至少一個位置曝露導電材料以提供耦合。在一些實施例中，介電板505可在介電板505的第一表面507中界定第二環形通道530。第二環形通道530可配置為安置RF墊圈533或可接觸導電材料510的任何其他導電連接。第二環形通道530可從第一環形通道525徑向向外形成，且因此可定位在腔室的處理區域之外的位置。因此，例如，第二環形通道530可不曝露於腔室內發生的事件，並且可不曝露於任何電漿流出物。
導電材料510可曝露在第二環形通道530內的至少一個位置，且可曝露在第二環形通道530內的多個位置。因為第二環形通道530可形成在第一環形通道525的徑向外側，所以導電材料510可延伸越過第一環形通道525。為了防止導電材料曝露在第一環形通道525中，可在介電板505內將第二環形通道530界定到比第一環形通道525更大的深度。因此，如第5B圖所示，導電材料510可在第一環形通道525下方的深度處延伸越過第一環形通道525，這可防止導電材料在第一環形通道處曝露。當RF墊圈533座落於第二環形通道530內時，墊圈可接觸在該通道內曝露的導電材料510，這可提供路徑來將導電材料用作腔室內的電極。
如上所述，導電材料可位於介電板內以確保已知導電材料的深度。因此，在一些實施例中，可在噴頭的其他特徵之前機械加工或形成第二環形通道530。導電材料510可完全延伸到噴頭的外部區域，或導電材料510可包括一或多個翼或突片535，從內部區域526中的更均勻的覆蓋範圍延伸到可形成外部通道530的外部區域。例如，可向下形成穿過外部區域的一或多個定位孔或凹槽，以定位導電材料510的正確深度，諸如，當包括突片535時在突片535之間。一旦知道，第二環形通道530可形成為完全曝露通道內的導電材料510。因為導電材料可圍繞噴頭延伸，且RF墊圈533或其他電子耦合也可圍繞噴頭延伸，所以在定位期間外部區域中導電材料的任何穿孔都不會影響作為電極的導電材料的操作，這是由於圍繞噴頭的多個接觸點。
介電板505可包括可保護免受電漿物種轟擊且可對電漿流出物（諸如含鹵素的電漿流出物）呈惰性的任何數量的材料。例如，介電板505可包括任何數量的金屬的氧化物或氮化物，包括鋁、釔、鋯、矽或其他元素或組合。導電材料可為可操作或用作電極的任何數量的導電材料，並且可包括鋁、鎢、鉬、鉭、鉑、鈦、釩或包括該等或其他導電材料的任何一種的合金的任何其他材料。儘管如下所述的一些實施例可能不包括燒結操作，但是當可根據方法400開發噴頭時，燒結溫度可能遠高於1,000℃。因此，較低熔點的金屬（諸如鋁，例如）可能不是適合的候選。另外，可選擇陶瓷材料和導電材料以產生與燒結溫度有關的匹配量，以控制燒節期間的膨脹/收縮。
介電板也可形成為控制所產生的噴頭的孔隙率的數量。因為部件可能在真空條件下操作，所以孔隙率可保持相對較低，以限制在真空條件下的效果或藉由噴頭除氣。類似地，特徵在於較高孔隙率的部件可能易於吸收電漿物種，例如，在執行處理之前可能需要增加調節。因此，在一些實施例中，可將用於介電板505的材料的孔隙率限制在約5％以下，且在一些實施例中，可將孔隙率限制在3％以下或約3％、2％以下或約2％、1％以下或約1％、0.9％以下或約0.9％、0.8％以下或約0.8％、0.7％以下或約0.7％、0.6％以下或約0.6％、0.5％以下或約0.5％、0.4％以下或約0.4％、0.3％以下或約0.3％、0.2％以下或約0.2％、0.1％以下或約0.1％或更低。
當在塗佈之前形成孔時，諸如用許多金屬部件形成孔時，較小的孔可能是不可行的，或者可能不會發生完整的塗佈。然而，為了促進塗佈而形成的孔越大，電漿洩漏的可能性就越大。本技術克服了該等問題，因為孔僅可延伸穿過介電板505而不接觸導電材料510。因此，因為藉由使用陶瓷材料克服了塗層的問題，其中孔的形成可能不會曝露導電材料，因此與傳統材料相比，可鑽出可進行後續塗佈的較小的孔。因此，在一些實施例中，孔515的特徵可在於小於或約10 mm的直徑，且在一些實施例中，特徵可在於具有小於或約9 mm、小於或約8 mm、小於或約7 mm、小於或約6 mm、小於或約5 mm、小於或約4 mm、小於或約3 mm、小於或約2 mm、小於或約1 mm或以下的直徑。孔的尺寸可影響可保持的間隙518以及在形成期間可能經歷的行進量。因此，間隙518（其可為徑向間隙）可圍繞每個孔延伸小於或約5 mm，並且在一些實施例中可延伸小於或約4 mm、小於或約3 mm、小於或約2 mm、小於或約1 mm、小於或約0.5 mm、或小於約每個孔，這可確保在孔的形成期間不曝露導電材料。
根據本技術的噴頭還可包括一或多種塗層，以限制或防止導電材料曝露於內部腔室環境。第 6 圖 顯示了根據本技術的一些實施例的方法600中的示例性操作。方法600可產生類似於以上所討論的噴頭，以及如上所述的其他腔室歧管或擴散器。方法600可包括用於製造介電部件的方法400的任何操作，並且所產生的噴頭可包括如前所述的任何材料、性質或特性。
與方法400相似，方法600可包括一或多個任選操作，其可或可不與根據本技術的方法的一些實施例具體相關。例如，描述了許多操作以便提供更廣泛的結構形式，但是對技術不是關鍵的，或者可藉由替代方法來執行，如將在下文進一步討論的。方法600描述了在第 7A-7C 圖 中的示例性噴頭700的頂部平面圖中示意性顯示的操作，將結合方法600的操作來描述其圖式。在本技術的實施例中，噴頭700可類似地結合在任何處理腔室中。應當理解為了說明的目的，第7圖僅顯示了總體示意圖，且示例性的噴頭可含有將要描述的任何數量的孔或結構元件。
方法600可包括在操作605處蝕刻板以產生孔和其他特徵。例如，可穿過陶瓷或介電板鑽出孔，陶瓷或介電板可具有以上所述的噴頭500的任何特徵、材料或特性。如第7A圖所示，當生產噴頭700時，可通過介電板705鑽出或形成孔715。在操作610處，可將導電性或金屬材料的網、箔、印刷或噴塗在一個或多個表面上施加到板。導電材料可為如前所述的任何導電材料，並且可定位或形成在一或多個表面上，諸如在噴頭的第一表面上。第7B圖顯示了在噴頭700的第一表面上形成導電材料710。如圖所示，儘管可在每個孔周圍保持間隙712，但是導電材料710可越過噴頭的第一表面延伸。例如，導電材料可保持距每個孔第一徑向距離而遠離孔，第一徑向距離可對應於上述的任何間隙距離。間隙712可執行確保不曝露導電材料的類似特徵，儘管該間隙也可為隨後添加的塗層提供空間，如將於下所述。間隙可被包括在預形成的導電材料中，或者可執行另一遮蓋操作以產生間隙。
可接著在任選的操作615處遮蓋形成的孔。可僅在孔周圍執行遮蓋，並圍繞每個孔徑向地或橫向地延伸有限的距離。可接著在操作620處施加塗層以覆蓋導電材料710。在施加塗層之後，可在任選操作625中移除遮罩。塗層也可為介電材料，且可為對比於板的第一介電材料的第二介電材料。第7C圖顯示噴頭隨後施加塗層720以越過導電材料710延伸。還可施加塗層720以保持與每個孔715的間隙722，且可將塗層720保持距每個孔第二徑向距離。在一些實施例中，第二徑向距離可小於第一徑向距離，這可確保塗層720完全覆蓋導電材料710。
第7C圖還顯示了導電材料710可沿著噴頭700的外部或徑向邊緣725在一個或多個位置中曝露。曝露可發生在環形通道730的徑向外部，環形通道730可為彈性體元件可安置的位置。環形通道730可界定在孔的徑向外部，且可界定在噴頭的內部區域和外部區域之間的邊界，內部區域可在腔室內曝露，而外部區域可不曝露於腔室處理。儘管在第7C圖中顯示，應當理解通道可在孔形成期間預先形成以確保材料的連續性，以允許用作電極。因此，導電材料在區域725處曝露的地方可允許用於電極操作的耦合，同時限制或防止腔室環境內的導電材料的曝露。在一些實施例中，可施加混合塗層，且可包括在整個噴頭之上施加的第一塗層，而第二較厚的塗層（諸如如下所述的第二層）可不施加至邊緣區域。較薄的塗層因為其厚度可允許通過塗層的電連接，儘管可防止一些電漿流出物，但是該厚度可能無法與電接觸完全絕緣。在一些實施例中，此選項可在製造期間提供額外的靈活性。
第 7D 圖 顯示了根據本技術的一些實施例的示例性噴頭的示意性部分橫截面圖，並且例如可顯示噴頭700的另一視圖。圖式顯示了噴頭的一部分，包括介電板705、導電材料710和塗層720，因為它們可圍繞孔715形成。孔715顯示為具有倒角的邊緣，但是圖式僅用於說明任何孔設計都可適用於本技術的任一者，且噴頭500、700或生產的任何其他噴頭的特徵可在於任何孔輪廓。
第7D圖顯示了如何越過板705的第一表面707形成導電材料710。與第一表面相對的第二表面709可不包括導電材料或塗層720，儘管在一些實施例中，第二表面也可包括一個或多個材料。例如，取決於噴頭或腔室組件的取向，部件的一側可能會更多地曝露於轟擊，而一側可能更多地曝露於化學反應性電漿流出物，且塗層可能會相應地施加，儘管如上所述塗層可施加到噴頭的任一側或兩側。如圖所示，導電材料710可保持遠離孔715相距第一距離或間隙712。塗層720可施加在導電材料710之上並且可施加到第二距離或間隙722，第二距離或間隙722可小於第一間隙。因此，在本技術的實施例中，導電材料710可在噴頭的內部區域中被完全覆蓋。
用於板和塗層兩者的介電材料可為先前描述的任何材料，且導電材料也可為先前提到的任何材料。另外，在一些實施例中，塗層720可為混合或多層塗層的類型。例如，可包括塗層720的第一層以限制導電材料曝露於塗層的第二層，這可例如限制對導電材料的氧化或其他作用。
根據本技術的一些實施例的腔室可用以執行改性操作，其中可在基板處理區域中形成偏壓電漿。這個操作可為對基板上結構的物理轟擊，並且可利用惰性或反應性較小的前驅物。另外，可藉由在遠端區域產生反應性電漿流出物來執行反應性蝕刻。前驅物可包括鹵素前驅物，其可配置成從基板移除改性的材料。因此，腔室的部件（諸如所描述的噴頭）可曝露於化學反應性電漿流出物（諸如氟、氯或其他含鹵素的流出物）及在偏壓電漿中產生的用於物理改性的離子。例如，示例性的噴頭可曝露於電漿流出物（諸如接觸面對基板的表面並在孔內的偏壓電漿流出物）及在與基板相互作用之前行進通過孔的反應性流出物兩者。以上所述的其他部件也可曝露於一種或兩種電漿流出物，包括來自回流的電漿流出物。儘管傳統部件可能由於導電部件曝露於電漿材料而退化，但是本技術的噴頭可限制或防止任何導電材料曝露，同時仍用作電漿電極。
電漿流出物可對腔室部件產生不同的影響。例如，離子可被噴頭從遠端產生的化學反應性電漿流出物至少部分地過濾出。然而，反應性流出物（諸如含氟流出物）例如可諸如藉由在傳統部件設計中形成氟化鋁而引起曝露材料的腐蝕。隨著時間的流逝，這種處理可能腐蝕曝露的金屬部件，而需要更換。另外，由基板處理區域中的偏壓電漿形成的電漿物種可能會撞擊部件，從而導致物理損壞和濺射，隨著時間的流逝，它們會侵蝕部件。因此，任何描述的部件都可能受到在腔室的一或多個區域內產生的電漿流出物的化學腐蝕及物理侵蝕的影響。
腐蝕可藉由在材料之上形成塗層720或使用用於塗層的特定材料的一些方式來控制。例如，儘管鋁可能因曝露於含氟電漿流出物而腐蝕，但是氧化鋁或其他鍍層或塗層在與電漿流出物接觸時可能不會腐蝕。因此，可藉由陽極氧化、氧化、原子層沉積、化學氣相沉積、電漿噴塗、化學鍍鎳、電鍍鎳、鈦酸鋇或可保護曝露的導電材料免於化學腐蝕的任何其他材料（諸如鋁、鉬、鉑或任何先前提到的材料）來塗佈或保護任何所述的部件。類似地，侵蝕可藉由在材料之上形成塗層或使用用於底板705的某些材料的一些方式來控制。例如，高效能材料（諸如氧化釔，其可包括或可不包括附加材料（例如包括鋁或鋯））可保護部件免受由偏壓電漿流出物引起的物理損壞。然而，當結構受到腐蝕性電漿流出物和侵蝕性電漿流出物的接觸時，仍然可能發生部件的損壞。因此，塗層720可包括所述的多種材料，且底板705也可包括附加的塗層。在實施例中，材料可相同、不同或結合。例如，在一些實施例中，塗層720可包括電漿噴塗氧化釔及所提及的用以增強對電漿流出物的抵抗力的任何其他材料。
另外，混合塗層720的第一層可越過導電材料710共形地延伸。如前所解釋的，第一層可為耐腐蝕層，配置成保護導電材料不受反應性蝕刻劑（包括含鹵素的流出物或蝕刻劑材料）的影響。在實施例中，第一層可為或包括陽極氧化、化學鍍鎳、電鍍鎳、氧化鋁或鈦酸鋇。由於抗腐蝕塗層的形成處理，可實現導電材料的完全覆蓋。覆蓋深度可小於或約25 μm，且可小於或約20 μm、小於或約15 μm、小於或約10 μm、小於或約5 μm、小於或約3 μm、小於或等於約1 μm、小於或約750 nm、小於或約500 nm、小於或約250 nm、小於或約100 nm、小於或約50 nm或更低。因為在一些實施例中達到增加厚度的時間可能相對較長，所以在一些實施例中塗層厚度可在約100 nm和約300 nm之間。在第一層的厚度可大於或約3 μm或約5 μm的實施例中，可不包括第二層。
混合塗層的第二層也可被包括在第一層的外部。第二層可包括氧化釔或其他高效能材料，諸如電子束塗層或氧化釔（包括鋁，鋯或其他材料）。第二層可至少部分地越過第一表面707延伸，並可越過部件的面向電漿表面延伸。混合塗層的第二層的特徵可在於小於或約25 μm的厚度，且在一些實施例中特徵可在於小於或約20 μm、小於或約15 μm、小於或約10 μm、小於或等於5 μm、小於或約1 μm、小於或約750 nm、小於或約500 nm、小於或約300 nm、小於或約100 nm或更低的厚度。
如先前所討論的，可在施加塗層720之前執行遮蓋操作。因為在一些實施例中可藉由噴塗機構施加塗層，因此可能難以通過如前所述的尺寸的孔進行輸送。若不執行遮蓋，則塗層可能無法形成完整的塗層，並且可能會出現由不一致的塗層形成的點蝕現象（pitting），這會促進隨著時間在處理期間移除塗層，並限制塗佈的可重複性。因此，在這可能是個問題且這可能限制塗層明確沿著導電材料和板的第一表面的一些實施例中，可執行遮蓋。
若使用兩層，則在一些實施例中，可在形成塗層的第一層或第二層的任何一個或兩個之前，對板705及/或導電材料710進行紋理化處理。例如，塗層可具有對紋理化表面的改進黏附力。在一些實施例中，可將紋理進行到高達或大於混合塗層的任一個或兩個層深度的深度。例如，在塗佈第一層之前，或在第一和第二層塗層之間，可經由機械加工、珠擊或其他噴砂技術或其他粗糙化或紋理化操作對板及/或導電材料進行紋理化。紋理化可執行到至少約50 nm的深度，並且可執行到至少約100 nm、至少約250 nm、至少約500 nm、至少約750 nm、至少約1 µm、至少約3 µm、至少約5 µm或更大的深度，雖然紋理化可能不會延伸到大於材料的總厚度的深度，以限制下層材料的曝露並確保覆蓋。
第 8 圖 顯示了根據本技術的一些實施例的方法800中的示例性操作。方法800可包括上文用方法600討論的噴頭形成的變型。將參考第 9A-9B 圖 描述該方法，第9A-9B圖顯示了根據本技術的一些實施例的示例性噴頭900的示意性頂部平面圖。方法800與方法600的不同之處可在於孔可在方法800中的塗佈之後形成。例如，方法800可藉由在介電板之上形成遮罩而在操作805處開始，在介電板處可隨後鑽出孔。在遮蓋之後，可在操作810處施加導電網、箔或塗層，其可藉由包括金屬印刷或金屬沉積的多種先前提到的技術來執行，並且其可如先前所述地發生，且可保持隨後將形成孔的間隙距離。在操作815處，可在導電材料之上施加塗層，導電材料可保持第二間隙，如前所述。
第9A圖可顯示在操作815處的示例性噴頭後續塗佈。如圖所示，噴頭900可類似於與第7圖所討論的噴頭，儘管孔可不穿過板905形成。可在操作820處移除遮罩材料，且可接著在操作825處通過板機械加工出孔。如第9B圖所示，最終的噴頭可類似於第7圖的最終噴頭，儘管在塗佈之後形成了孔915。
根據本技術的實施例的噴頭可提供比可基於導電基底材料的傳統噴頭更好的耐腐蝕性和耐侵蝕性。如上所述，藉由將導電材料與陶瓷或其他介電材料結合或結合在陶瓷或其他介電質內，仍可提供作為電極的操作，同時允許減小孔的尺寸並改善處理腔室內的導電材料的覆蓋範圍，包括完全覆蓋範圍。
在前面的描述中，出於解釋的目的，已經闡述了許多細節以便提供對本技術的各種實施例的理解。然而，對於熟悉本領域者將顯而易見的是，可在沒有該等細節的一些或具有其他細節的情況下實施某些實施例。
已經揭露了幾個實施例，熟悉本領域者將認識到在不背離實施例的精神的情況下，可使用各種修改、替代結構和等效元件。另外，為了避免不必要地混淆本技術，沒有描述許多已知的處理和元件。因此，以上描述不應被視為限制本技術的範圍。另外，方法或處理可被描述為順序的或分步驟的，但是應當理解操作可同時執行，或者以與所列順序不同的順序執行。
在提供值的範圍的情況下，應理解的是除非上下文另外明確指出，否則在該範圍的上限和下限之間的每個中間值（至下限單位的最小分數）也特別地揭露。涵蓋了在那個宣稱範圍中的任何宣稱值或未宣稱中間值與宣稱範圍內的任何其他宣稱或中間值之間的任何較窄範圍。那些較小範圍的上限和下限可獨立地包括或排除在範圍中，且包括在較小範圍中的上下限的任一個、兩個皆無或兩個的每個範圍也涵蓋在本技術內，但受到宣稱範圍中任何特定排除的限制規範。在所宣稱範圍包括上下限的一個或兩個的情況下，還包括排除那些包括的上下限的任一個或兩個的範圍。
如於此和附隨的申請專利範圍中所使用的，單數形式「一（a）」、「一（an）」和「該（the）」包括複數引用，除非上下文另外明確指出。因此，例如，對「一前驅物」的引用包括複數個這樣的前驅物，而對「該層」的引用包括對一或多個層及熟悉本領域者已知的其等效元件的引用等等。
此外，當在這份說明書和以下的申請專利範圍中使用時，詞語「包含（comprise(s)）」、「包含（comprising）」、「含有（contain(s)）」、「含有（containing）」、「包括（include(s)）」和「包括（including）」旨在指定所宣稱的特徵、整數、部件或操作的存在，但是它們不排除一個或多個其他特徵、整數、部件、操作、動作或群組的存在或增加。
100:系統 102:前開式晶圓傳送盒/FOUP 104:機械臂 106:保持區域 108a:處理腔室 108b:處理腔室 108c:處理腔室 108d:處理腔室 108e:處理腔室 108f:處理腔室 190a:串處理腔室聯部分 109b:串聯部分 109c:串聯部分 110:第二機械臂 200:處理腔室系統 201:遠端電漿系統/RPS 203:冷卻板 205:氣體入口組件/入口組件/氣體入口 210:流體供應系統 214:上板 215:第一電漿區域/電漿激發區域/電漿區域 216:下板 217:面板 218:容積 219:第一流體通道 220:絕緣環 221:第二流體通道 223:離子抑制器 225:噴頭/氣體分配組件 233:處理區域 240:功率源 253:圖 255:基板 258:供應區域 259:孔 265:基板支撐件/基座 325:噴頭 365:通孔 375:小孔 400:方法 405:操作 410:操作 415:操作 420:操作 500:噴頭 505:介電板 507:第一表面 509:第二表面 510:導電材料 515:孔 518:間隙 525:第一環形通道 526:內部區域 527:彈性體元件 530:第二環形通道/外部通道 533:RF墊圈 535:突片 600:方法 605:操作 610:操作 615:操作 620:操作 625:操作 700:噴頭 705:板 707:第一表面 709:第二表面 710:導電材料 712:間隙 715:孔 720:塗層 722:間隙 725:徑向邊緣/區域 730:環形通道 800:方法 805:操作 810:操作 815:操作 820:操作 825:操作 900:噴頭 905:板 915:孔
藉由參考說明書的其餘部分和圖式，可實現對所揭露技術的本質和優點的進一步理解。
第1圖顯示了根據本技術的一些實施例的示例性處理系統的一個實施例的頂部平面圖。
第2A圖顯示了根據本技術的一些實施例的示例性處理腔室的示意性橫截面圖。
第2B圖顯示了根據本技術的一些實施例的第2A圖所示的處理腔室的一部分的詳細示意圖。
第3圖顯示了根據本技術的一些實施例的示例性噴頭的底部平面圖。
第4圖顯示了根據本技術的一些實施例的方法中的示例性操作。
第5A圖顯示了根據本技術的一些實施例的示例性噴頭的示意性部分頂部平面圖。
第5B圖顯示了根據本技術的一些實施例的示例性噴頭的示意性部分橫截面圖。
第6圖顯示了根據本技術的一些實施例的方法中的示例性操作。
第7A-7C圖顯示了根據本技術的一些實施例的示例性噴頭的示意性頂部平面圖。
第7D圖顯示了根據本技術的一些實施例的示例性噴頭的示意性部分橫截面圖。
第8圖顯示了根據本技術的一些實施例的方法中的示例性操作。
第9A-9B圖顯示了根據本技術的一些實施例的示例性噴頭的示意性頂部平面圖。
包括幾個圖式作為示意圖。應當理解圖式僅用於說明目的，且除非特別說明是按比例繪製的，否則不應視為按比例繪製的。另外，作為示意圖，提供了圖式以幫助理解，並且與實際表示相比，圖式可能不包括所有態樣或資訊，且出於說明目的，圖式可能包括額外的或誇大的材料。
在附隨的圖式中，相似的部件及/或特徵可具有相同的元件符號。此外，相同類型的各種部件可藉由在元件符號後面加上一個在相似部件之間進行區分的字母來進行區分。若在說明書中僅使用第一元件符號，則描述適用於具有相同第一元件符號的任何類似部件，而與字母無關。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
500:噴頭
505:介電板
510:導電材料
515:孔
526:內部區域
535:突片

Claims (20)

  1. 一種半導體處理腔室噴頭，包含：一介電板，其特徵在於一第一表面和與該第一表面相對的一第二表面，其中該介電板界定穿過該介電板的複數個孔，其中該介電板在該介電板的該第一表面中界定一第一環形通道，該第一環形通道圍繞該複數個孔延伸，且其中該介電板在該介電板的該第一表面中界定一第二環形通道，該第二環形通道從該第一環形通道徑向向外形成；及一導電材料，嵌入在該介電板內並圍繞該複數個孔延伸而不會被該等孔曝露於腔室環境，其中該導電材料在該第二環形通道處曝露。
  2. 如請求項1所述之半導體處理腔室噴頭，其中該第二環形通道在該介電板內界定到比該第一環形通道更大的一深度。
  3. 如請求項2所述之半導體處理腔室噴頭，其中該導電材料在該介電板內以大於該第一環形通道的該深度的一深度延伸通過該介電板，且其中該導電材料被該第二環形通道曝露而不被該第一環形通道曝露。
  4. 如請求項1所述之半導體處理腔室噴頭，進一步包含一RF墊圈，座落於該第二環形通道內且配置成將該導電材料用作一電極。
  5. 如請求項1所述之半導體處理腔室噴頭，進 一步包含一彈性體元件，座落於該第一環形通道內。
  6. 如請求項1所述之半導體處理腔室噴頭，其中該導電材料包含一箔或網，越過由該第一環形通道界定的該噴頭的一內部區域而延伸。
  7. 如請求項6所述之半導體處理腔室噴頭，其中該導電材料包含複數個突片，從該噴頭的該內部區域延伸到該第二環形通道。
  8. 一種半導體處理腔室噴頭，包含：一板，包含一第一介電材料，該板的特徵在於一第一表面和與該第一表面相對的一第二表面，其中該板界定穿過該板的複數個孔；一導電材料，設置在該板的該第一表面上，其中該導電材料保持在距該複數個孔的每個孔的一第一徑向距離處；及一塗層，包含一第二介電材料，其中該塗層越過該導電材料延伸，且其中該塗層保持在距該複數個孔的每個孔的一第二徑向距離處，其中該第二徑向距離小於該第一徑向距離。
  9. 如請求項8所述之半導體處理腔室噴頭，其中該導電材料在該噴頭的一徑向邊緣處曝露，以提供該噴頭的電耦合。
  10. 如請求項9所述之半導體處理腔室噴頭，其中該噴頭在該板的該第一表面中在該複數個孔的徑向外側，且在曝露的該導電材料的徑向內側在該噴頭 的該徑向邊緣處界定一環形通道。
  11. 如請求項8所述之半導體處理腔室噴頭，其中該塗層包含一多層塗層。
  12. 如請求項8所述之半導體處理腔室噴頭，其中該第一介電材料和該第二介電材料包含不同的材料。
  13. 如請求項8所述之半導體處理腔室噴頭，其中該導電材料包含一穿孔的箔或網。
  14. 一種半導體處理腔室，包含：一蓋；一基板支撐件；及一噴頭，位於該蓋和該基板支撐件之間，其中一第一電漿區域界定在該噴頭和該蓋之間，其中一第二電漿區域界定在該噴頭和該基板支撐件之間，其中該蓋和該基板支撐件各自與一產生電漿的功率源耦合，其中該噴頭與接地電耦合，且其中該噴頭包含：一板，包含一第一介電材料，該板的特徵在於一第一表面和與該第一表面相對的一第二表面，其中該板界定穿過該板的複數個孔，且其中該噴頭在該板的該第一表面中在該複數個孔的徑向外側界定一第一環形通道；及一導電材料，結合在該板內，其中該導電材料的腔室環境曝露限制在該第一環形通道的徑向外側的一區域。
  15. 如請求項14所述之半導體處理腔室，其中該板在該板的該第一表面中界定一第二環形通道，該第二環形通道形成為從該第一環形通道徑向向外，且其中該導電材料被嵌入該板內並被該第二環形通道曝露。
  16. 如請求項15所述之半導體處理腔室，其中該第二環形通道在該板內界定到比該第一環形通道更大的一深度，其中該導電材料在該板內以大於該第一環形通道的該深度的一深度延伸通過該板，且其中該導電材料被該第二環形通道曝露而不被該第一環形通道曝露。
  17. 如請求項15所述之半導體處理腔室，進一步包含：一RF墊圈，座落於該第二環形通道內並被配置成將該導電材料電耦合至接地；及一彈性體元件，座落於該第一環形通道內。
  18. 如請求項14所述之半導體處理腔室，其中該導電材料設置在該板的該第一表面上，其中該導電材料保持在距該複數個孔的每個孔的一第一徑向距離處，該噴頭進一步包含：一塗層，包含一第二介電材料，其中該塗層越過導電材料延伸，且其中該塗層保持在距該複數個孔的每個孔的一第二徑向距離處，其中該第二徑向距離小於該第一徑向距離。
  19. 如請求項18所述之半導體處理腔室，其中該塗層包含一多層塗層。
  20. 如請求項14所述之半導體處理腔室，其中該導電材料包含一穿孔的箔或網。
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