TW202013578A - 用於基座配置的系統及方法 - Google Patents

用於基座配置的系統及方法 Download PDF

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TW202013578A
TW202013578A TW108119156A TW108119156A TW202013578A TW 202013578 A TW202013578 A TW 202013578A TW 108119156 A TW108119156 A TW 108119156A TW 108119156 A TW108119156 A TW 108119156A TW 202013578 A TW202013578 A TW 202013578A
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帕寧德拉普拉卡什 巴特
梅莫特 薩米爾
尼可萊 卡寧
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Abstract

用於對處理腔室的基座的進行定中心及/或調平的示例性裝置，可包括具有中央軸的安裝塊，安裝在安裝塊上的一組第一量規，以及安裝在安裝塊上的一組第二量規。該組第二量規可大致垂直於該組第一量規而安裝。該複數個第一量規可經配置為獲得指示出處理腔室的氣體分配板與基座之間的一平行程度的測量值。該複數個第二量規可經配置為獲得指示出處理腔室的環狀件與基座的一軸向對齊程度的測量值。此示例性裝置可用於在真空下對基座進行定中心及/或調平。

Description

用於基座配置的系統及方法
本案技術關於半導體製程及設備。更具體地，本案技術關於對半導體處理腔室的基座進行定中心及/或調平。
透過在基板表面上產生錯綜複雜圖案化的材料層的製程，使積體電路的製造成為可能。隨著下一代裝置中裝置尺寸的不斷縮小、加工條件的均勻性的重要性不斷提高，腔室設計及系統設置會對所生產裝置的品質有很重要影響。因此，需要可用於生產高品質裝置及結構的系統及方法。
示例性的裝置可包括一環狀安裝塊，複數個第一量規，及複數個第二量規。環狀安裝塊可包含一中央軸，圍繞該中央軸的一側壁，以及從該側壁朝向該中央軸徑向向內延伸的一安裝平台。複數個第一量規可安裝在安裝平台上，以使複數個第一量規可大致平行於中央軸定向。複數個第一量規可被配置以獲得第一複數個測量值，這些測量值指示出在大致垂直於該環狀安裝塊的中央軸的一平面與測量點之間的相對距離。複數個第二量規可安裝在安裝平台上，以使複數個第二量規可大致垂直於中央軸定向，並且複數個第二量規的每個第二量規的測量尖端可徑向延伸超過環狀安裝塊的側壁。複數個第二量規可配置以獲得第二複數個測量值，第二複數個測量值指示出環狀安裝塊的中央軸與測量點之間的相對距離。
在一些實施例中，複數個第一量規包括至少三個刻度量規。複數個第二量規可包括至少三個刻度量規。在一些實施例中，複數個第一量規中的每個第一量規的測量尖端可包括扁平尖端。複數個第二量規的每個第二量規的測量尖端可包括輥尖。
在一些實施例中，環狀安裝塊的側壁的特徵可在於具有複數個基準表面。複數個基準表面的每個基準表面可大致平行於環狀安裝塊的中央軸。複數個基準表面的每個基準表面可定位在距環狀安裝塊的中央軸相等的距離處。複數個第二量規的每個第二量規係安裝在複數個基準表面的一個基準表面上方，以使複數個第二量規的每個第二量規的測量尖端徑向地延伸超出複數個基準表面的基準表面的下方。
在一些實施例中，示例性裝置還可包括一基準板。基準板可包括凸起部分。凸起部分的特徵可是平坦表面。基準板可為可釋放地連接到環狀安裝塊的安裝平台上。環狀安裝塊可定義一凹槽，以使當基準板可附接到環狀安裝塊時，基準板的凸起部分可被容納在環狀安裝塊的凹槽內，並且平坦表面可面向凹槽的底板並可從凹槽的底板上被懸掛。
在一些實施例中，該示例性裝置還可包括量規主軸壓縮器。量規主軸壓縮器可圍繞環狀安裝塊的中央軸定位。量規主軸壓縮器可定義一錐形內表面。錐形內表面可經配置以當量規主軸壓縮器會被定位成圍繞環狀安裝塊的中央軸時，壓縮複數個第二量規的每個第二量規的量規主軸，並且環狀安裝塊可沿著環狀安裝塊的中央軸平移。
在一些實施例中，示例性裝置還可包括調平基準板及零設定器。調平基準板的特徵可為具有第一表面、與第二表面相對的第一表面，及複數個開口。零設定器可包括一圓柱形主體。圓柱形主體可包括從圓柱形主體的第一表面延伸的複數個突片。零設定器的複數個突片中的每個突片，可經配置以容納在調平基準板的複數個開口的一開口中。複數個突片的每個突片的特徵可為具有一高度尺寸，該高度尺寸可小於由調平基準板的第一表面及第二表面所定義的調平基準板的一厚度尺寸，以使當零設定器的複數個突片會被容納在調平基準板的複數個開口中時，複數個突片不延伸超過調平基準板的第二表面。零設定器還可包括一板構件。板構件可由圓柱形主體支撐。當零設定器的複數個突片會被容納在調平基準板的複數個開口中時，零設定器可由調平基準板支撐，以使零設定器的板構件的第一表面可平行於調平基準板的第一表面。
本案技術還可包括示例性方法。示例性方法可包括步驟：藉由複數個第一刻度量規收集第一組測量值。第一組測量值可指示出在半導體處理腔室的氣體分配構件處的複數個位置與半導體處理腔室的基座的頂表面之間的相對距離。示例性方法可進一步包括基於第一組測量將基座調節到第一位置，以使基座的頂表面可大致平行於氣體分配構件的底表面。
在一些實施例中，示例性方法可進一步包括步驟：在收集該第一組測量值之前，將半導體處理腔室內的一壓力降低到真空。在一些實施例中，示例性方法可進一步包括步驟：升高基座以將複數個第一刻度量規的每個第一刻度量規的一量規主軸的一扁平尖端定位成與氣體分配構件的底表面接觸。在一些實施例中，示例性方法還可包括步驟：使複數個第一刻度量規相對於基座的頂表面歸零。
在一些實施例中，示例性方法可進一步包括步驟：藉由複數個第二刻度量規收集第二組測量值。第二組測量值可指示出半導體處理腔室的環構件處的複數個位置與基座的中央軸之間的相對距離。示例性方法可進一步包括步驟：基於第二組測量值，調節基座到第二位置，以使基座的中央軸與環構件的中央軸可對齊。
在一些實施例中，示例性的方法可進一步包括步驟：將量規主軸壓縮器放置於半導體處理腔室的腔室主體的內部。量規主軸壓縮器可包括一錐形內表面。示例性方法還可包括步驟：升高該基座以使該複數個第二刻度量規的每個第二刻度量規的一量規主軸的一輥尖沿著該錐形內表面滑動，並且通過該錐形內表面，直到該複數個第二刻度量規的每個第二刻度量規的該量規主軸的該輥尖會被定位成抵向該半導體處理腔室的該環構件的一內表面。
在一些實施例中，複數個第一刻度量規與複數個第二刻度量規係安裝在一安裝塊上。在一些實施例中，示例性方法還可包括步驟：將安裝塊放置在基座周圍。安裝塊可包括複數個突片，複數個突片容納在基座處的複數個凹槽內，以使當安裝塊被圍繞基座放置時，安裝塊的中央軸與基座的中央軸可對齊。
本案技術還可包括附加的示例性裝置。該示例性裝置可包括量規安裝塊，複數個第一量規，及複數個第二量規。複數個第一量規可安裝在量規安裝塊上。複數個第一量規可經配置以獲得可指示出半導體處理腔室的蓋堆疊的第一部件與半導體處理腔室的基座之間的平行程度的測量值。複數個第二量規可安裝在量規安裝塊上。複數個第二量規可經配置以獲得可指示出蓋堆疊的第二部件與基座之間的軸向對齊程度的測量值。
在一些實施例中，半導體處理腔室還可包括一腔室主體。蓋堆疊可經配置以相對於腔室主體打開及關閉，以使當蓋堆疊被關閉時，半導體處理腔室內的壓力可減小到真空。複數個第一量規可經配置以獲得可指示出蓋堆疊的第一部件與真空下的基座之間的平行程度的測量值。複數個第二量規可經配置以獲得可指示出蓋堆疊的第二部件與真空下的基座之間的軸向對齊程度的測量值。
在一些實施例中，量規安裝塊可包括一個中央軸，圍繞該中央軸的一側壁，以及從朝向中央軸的側壁徑向向內延伸的一安裝平台。複數個第一量規及/或複數個第二量規可安裝在安裝平台上。複數個第二量規可經定向以大致垂直於複數個第一量規。
在一些實施例中，該示例性裝置還可包括一量規主軸壓縮器。量規主軸壓縮器可經配置以圍繞基座的中央軸定位。量規主軸壓縮器可包括一錐形內表面。錐形內表面可經配置以接合並壓縮複數個第二量規的每個第二量規的輥尖。
在一些實施例中，蓋堆疊的第一部件可包括一板構件。可決定在板構件的下表面與基座的上表面之間的平行程度。在一些實施例中，蓋堆疊的第二部件可包括一環構件。
本案技術可提供優於傳統的系統與技術許多好處。例如，本案技術可允許處理腔室的基座在大氣或真空條件下進行定中心及/或調平。本案技術可無線地及/或使用有線連接，以將測量資料發送到處理腔室外部的遠端電腦，以使操作員進行定中心及/或調平基座。本案技術可實現與傳統系統及技術相當的分辨率及/或精度，但是可顯著降低成本。可結合以下描述及附圖，更詳細地描述這些與其他實施例以及它們的許多優點及特徵。
在半導體處理期間，蝕刻及/或沉積的均勻性可能對腔室主體中的基座（其上可供放置基板以進行處理）與蓋堆疊部件之間的軸向對齊而言為敏感的，且透過蓋堆疊部件可遞送及/或分配各種處理氣體到腔室中及到基板上。蝕刻及/或沉積均勻性也可能對蓋堆疊中的基座與氣體分配部件之間的平行而言為敏感的。
一些傳統工具，在大氣條件下，可相對於腔室主體而將基座定中心，及/或可相對於腔室主體的頂表面將基座調平。然而，蓋堆疊可鉸接至腔室主體，並且可相對於腔室主體打開及關閉。當蓋堆疊被關閉時，蓋堆疊的氣體分配部件會無法與腔室主體軸向對齊，及/或不平行於腔室主體的頂部表面。因此，蓋堆疊的氣體分配部件可能不與基座軸向對齊及/或平行，而影響加工均勻性。此外，當腔室壓力可減小到真空時，在泵送製程期間部件的運動也會影響氣體分配部件與基座之間的軸向對齊與平行。
一些傳統的技術利用基於電容的感應器，可在真空下將基座定中心或調平。然而，基於電容的感應器及相關的定中心及/或調平技術的成本可能非常高。此外，在一些傳統技術中可能需要資料線，以將由基於電容的感應器所獲得的測量值傳輸到處理腔室外部的操作者裝置。
本案的技術透過利用可經配置以決定基座與蓋堆疊中的氣體分配部件之間的平行，及/或以決定在它們之間的軸向對齊的刻度量規來克服了這些問題。本案技術可將測量資料無線地發送到遠端電腦，以便操作員將基座定中心及/或調平。本案技術可允許處理腔室的基座在大氣或真空條件下定中心及/或調平。本案技術可實現與傳統電容基座感應器相當的分辨率及/或精度，但是可將成本降低至少70％或更多。
儘管以下的揭示將慣常地說明將處理腔室的特定部件相對於處理腔室的其他部件利用所揭示的技術來進行定中心及/或調平，該技術不應該被認為是以此限制，而作為僅用於定中心及/或調平所列出的部件。此外，儘管描述了示例性半導體處理腔室以幫助理解本案技術，但是該技術不應被視為限於僅對半導體處理腔室的部件進行定中心及/或調平，或作為對所描述的示例性腔室的限制。應理解的是，本案技術可用於若將部件定中心及/或調平係有利的任何類型的處理腔室以及其他應用。
圖 1 圖示出根據實施例的沉積、蝕刻、烘乾、及固化腔室的處理系統100的一個實施例的俯視圖。在圖中，一對前開口統一盒（FOUP）102供應各種尺寸的基板，這些基板由機械臂104接收並且在被放入基板處理腔室108a-f之前係放置在低壓保持區域106中，位於串聯區段109a-c。第二機械臂110可被用於從將基板晶片從保持區域106輸送到基板處理腔室108a-f，並且輸送回保持區域106。除了循環層沉積（CLD）、原子層沉積（ALD）、化學氣相沉積（CVD）、物理氣相沉積（PVD）、蝕刻、預清潔、脫氣、導向及其他基板製程之外，每個基板處理腔室108a-f可配備以執行多種基板處理操作，包括本案所述的乾式蝕刻製程。
所述的基板處理腔室108a-f可包括一或多個系統部件，用於沉積、退火、固化、及/或蝕刻在基板晶片上的介電質或金屬膜。在一配置中，兩對處理腔室（例如，108c-d及108e-f）可用於在基板上沉積材料，且第三對處理腔室（例如，108a-b）可用於蝕刻沉積的材料。在另一配置中，所有三對腔室（例如，108a-f）可經配置以蝕刻在基板上的介電質或金屬膜。可在不同實施例中與所示的製造系統分離的腔室中進行所描述的任何一或多個製程。應當理解，系統100可考慮使用供介電膜的沉積、蝕刻、退火、及固化腔室的附加配置。
圖 2A 圖示出示例性處理腔室系統200的橫截面圖，其中處理腔室內具有分隔的電漿產生區域。在膜蝕刻期間，例如，氮化鈦、氮化鉭、鎢、銅、鈷、矽、多晶矽、氧化矽、氮化矽、氮氧化矽、碳氧化矽等，製程氣體可藉由一氣體入口部件205而流入第一電漿區域215。一遠程電漿系統（RPS）201可選擇地包括在系統中，並且可處理第一氣體，該氣體接著通過氣體入口部件205。入口部件205可包括兩個或多個不同的氣體供給通道，其中若包括RPS 201的話，第二通道（未圖示）可繞過RPS 201。
一種冷卻板203、面板217、離子抑制器223、噴淋頭225、及基板支撐件或基座265，基座265具有圖示出的基板255設置在其上，且分別根據實施例可被包括在其內。基座265可具有熱交換流體通道，熱交換流體可流過該熱交換流體通道，以控制該基板的溫度，其可在製程操作期間，加熱及/或加工冷卻基板或晶片。基座265的晶片支撐盤（其可包括、陶瓷或其組合）也可使用嵌入式電阻加熱器元件來以電阻加熱，以實現相對高的溫度，例如從高達或約100℃到高於或約600℃。基座265可包括邊緣環266，其定位在基座265的凹下凸耳。
面板217可為金字塔形的、圓錐形的、或其他具有窄頂部擴展到寬底部類似結構。面板217可如圖示額外地是平的，並且包括用於分配製程氣體的複數個穿越通道。取決於RPS 201的使用，電漿產生氣體及/或電漿激發物種可穿過面板217中的如圖2B所示的複數個孔，以供更均勻地輸送到第一電漿區域215中。
示例性的配置可包括具有氣體入口部件205，通入一個氣體供給區域258，氣體供給區域258被面板217從第一電漿區域215分隔出，以使氣體/物種流過面板217內的孔而進入第一電漿區域215。可選擇結構及操作的特徵以防止電漿的顯著回流，從第一電漿區域215回流入供應區域258、氣體入口部件205、及流體供應系統210。面板217，或腔室的一個導電頂部分，及噴淋頭225係圖示出為具有位於該些特徵之間的絕緣環220，其允許將AC電勢相對於噴淋頭225及/或離子抑制器223而施加到面板217。絕緣環220可定位在面板217與噴淋頭225及/或離子抑制器223之間，以使電容耦合電漿（CCP）在第一電漿區域中形成。擋板（未圖示）可另外設於第一電漿區域215中，或以其他方式與氣體入口部件205耦合，以影響通過氣體入口部件205進入該區域的流體流動。
離子抑制器223可包括板或其它幾何形狀，其定義出貫穿該結構的複數個孔，該些孔配置以抑制離子帶電物種的遷移出第一電漿區域215，同時允許不帶電的中性或自由基物種以通過離子抑制器223以進入在該抑制器與該噴淋頭之間的一活化氣體輸送區域。在實施例中，離子抑制器223可包括具有各種開孔配置的多孔板。這些不帶電的物種可包括高活性物種，其以較低反應性的載運氣體輸送通過開孔。如上所述，可減少通過孔的離子物種的遷移，並且在某些情況下可完全抑制。控制通過離子抑制器223的離子物種的量，可有利地對與以下的晶片基板接觸的氣體混合物提供增加的控制，這反過來可增加對氣體混合物的沉積及/或蝕刻特性的控制。例如，調整氣體混合物的離子濃度可顯著改變其蝕刻選擇性，例如SiNx：SiOx的蝕刻比、Si：SiOx的蝕刻比等。在進行沉積的替代實施例中，還可改變供介電材料的保形-可流動式的沉積的平衡。
在離子抑制器223中的複數個孔可經配置以控制該活化氣體（即，離子物種、自由基物種，及/或中性物種）通過離子抑制器223。例如，可控制孔的長寬比，或孔的直徑與長度的比，及/或孔的幾何形狀，以使通過離子抑制器223的活化氣體中的離子帶電物種的流動減少。離子抑制器223中的孔可包括面對電漿激發區域215的一錐形部分，及面對噴淋頭225的一圓柱形部分。該圓柱形部分可經形狀及尺寸設計以控制通向噴淋頭225的離子物種的流動。可調節的電偏壓也可施加到離子抑制器223，作為控制離子物種流過抑制器的附加構件。
離子抑制器223可用於減少或消除離子帶電物種從電漿產生區域行進到基板的量。不帶電的中性及自由基物種仍然可通過離子抑制器中的開口，以與基板反應。應注意的是，在實施例中，不會執行在基板周圍的反應區域中的離子帶電物種的完全消除。在某些情況下，傾向將離子物種達到基板以進行蝕刻及/或沉積製程。在這些情況下，離子抑制器可助於將反應區域中的離子物種的濃度控制在有助於該製程的水平。
噴淋頭225與離子抑制器223的組合，可允許電漿出現在第一電漿區域215中，以避免直接活化在基板處理區域233中的氣體，同時仍允許經活化的物種從腔室電漿區域215行進到基板處理區域233。以這種方式，腔室可經配置以防止電漿接觸被蝕刻的基板255。這可有利地保護在基板上經圖案化的各種複雜結構及膜，若直接與所產生的電漿接觸，則可能受損壞、錯位或以其他方式翹曲。另外，當允許電漿接觸基板或接近基板的水平時，氧化物種的蝕刻的速率會增加。因此，若暴露的材料區域是氧化物，則可透過將電漿保持遠離基板來進一步保護該材料。
該處理系統可進一步包括電源240，電源240與處理腔室電耦合以提供電力至面板217、離子抑制器223、噴淋頭225、及/或基座265，以在第一電漿區域215或處理區域233內產生電漿。電源可經配置以依據所執行的製程向該腔室輸送可調節的電量。此一配置可允許一可調諧電漿用於正在執行的製程中。與遠程電漿單元不同，遠程電漿單元通常具有開或關功能，可調諧電漿可經配置以向電漿區域215輸送特定量的電力。這反而可允許開發特定的電漿特性，以使前驅物(precursor)可以特定方式解離，以增強由這些前驅物產生的蝕刻輪廓。
電漿可在噴淋頭225上方的腔室電漿區域215，或者在噴淋頭225下方的基板處理區域233中被點燃。電漿可存在於腔室電漿區域215中，以從例如含氟前驅物或其他前驅物的流入物中產生自由基前驅物。通常在射頻（RF）範圍內的AC電壓，可施加在處理腔室的導電的頂部（例如面板217）與噴淋頭225及/或離子抑制器223之間，以在沉積期間點燃腔室電漿區域215中的電漿。RF電源可產生13.56MHz的高RF頻率，但是也可單獨產生其他頻率或者與13.56MHz頻率組合的其他頻率。
如圖2A所示，在製程期間，基座265可被升高，以使基座265的頂表面及支撐在其上的基板255被升高到處理腔室200的泵送襯墊270之上。基板255可被處理腔室200的間隔環280包封或包圍以進行處理。間隔環280及在間隔環280上或其上方的各種部件，如冷卻板203、面板217、離子抑制器223、噴淋頭225等，也可在處理腔室220的蓋堆疊中被組裝，也可相對於蓋堆疊的一軸或各種蓋堆疊部件的一共用軸而定中心。泵送襯墊270及泵送襯墊270下方的包括基座265的各種部件，可在處理腔室200一腔室主體中進行裝配，也可相對於腔室主體的一軸或各種腔室主體部件的一共用軸而定中心。在製程期間，腔室主體的該軸與蓋堆疊的該軸可對齊，以使基座265及支撐在其上的基板255，可被定中心及/或平行於面板217、離子抑制器223、及/或噴淋頭225以實現均勻處理。
圖 2B 圖示出影響通過面板217的處理氣體分佈的特徵的一詳細視圖253。如圖2A及2B所示，面板217、冷卻板203、及氣體入口組件205交叉以定義出氣體供應區域258，製程氣體可從氣體入口205輸送到該氣體供應區域258中。氣體可充滿氣體供給區域258，並通過面板217內的開孔259而流向第一電漿區域215。開孔259可經配置以大致單向的方式直接流動，以使製程氣體可流入處理區域233，但也可在將面板217橫向之後，部分地或完全地阻止回流流入氣體供給區域258。
在處理腔室部分200中使用的例如噴淋頭225的氣體分配部件，可被稱為雙通道噴淋頭（DCSH），且另外在圖3所述的實施例中詳細說明。雙通道噴淋頭可提供蝕刻製程，其允許在處理區域233之外的蝕刻劑分離，以在被輸送到處理區域內之前，提供與腔室部件及彼此的有限的相互作用。
噴淋頭225可包括上板214及下板216。該些板可彼此連接以在該些板之間定義出容積218。該些板的連接可以提供第一流體通道219穿過上板及下板，及第二流體通道221穿過下板216。形成的通道可經配置以提供僅經由第二流體通道221而從容積218穿過下板216的流體通路，且第一流體通道219可與在該些板與第二流體通道221之間的容積218流體地隔離。可經由氣體分配組件225的一側，而與容積218流體地連通。
圖 3 是依據實施例的與處理腔室一起使用的噴淋頭325的底視圖。噴淋頭325可對應於圖2A中所示的噴淋頭225。顯示出第一流體通道219的視圖的通孔365，可具有多種形狀及配置，以控制並影響通過噴淋頭225的前驅物的流動。顯示第二流體通道221的視圖的小孔375，即使在通孔365之中，可大致均勻地分佈在噴淋頭的表面上，並且相較於其他配置，可有助於在前驅物離開噴淋頭時提供更均勻的前驅物混合。
圖 4A 圖示出根據本案技術的實施例的裝置400的立體圖，該裝置400包括用於對處理腔室的基座進行定心及/或調平的各種部件。圖4A圖示出裝置400的各種部件可放置在部件保持器405上，以便在不用對於處理腔室的基座進行定中心及/或調平時能收存。圖 4B 圖示出圖4A中所示的裝置400的剖視圖。裝置400可包括量規安裝塊410，量規安裝塊410具有安裝在其上的一組第一量規420配置以用於調平處理腔室的基座，及一組第二量規430配置以用於將基座定中心、一定中心基準板440、一調平基準板450、一零設定器460、及一量規主軸壓縮器470。該組第一量規420也可稱為水平量規組420，且該組第二量規430也可稱為定中心量規組430。
進一步參照圖4A及4B，量規安裝塊410可為或包括具有一中央軸的環狀主體412。環狀主體412可包括圍繞中央軸的一側壁414，及從側壁414朝向該中央軸徑向向內延伸的一環狀凸緣416。環狀凸緣416可定義一安裝平台418，在安裝平台418上可安裝該組第一量規420及該組第二量規430。如將在以下更詳細地所描述的，當安裝時，該組第一量規420可定位成從量規安裝塊410的環狀凸緣416徑向向內，並且可被定向為大致平行於量規安裝塊410的該中央軸。該組第二量規430可定向以大致垂直於量規安裝塊410的該中央軸，並且該組第二量規430的每一組的測量尖端436可徑向延伸超出該量規安裝塊410的側壁414。量規安裝塊410還可包括一對把手411。
量規安裝塊410的側壁414可包括一組基準表面413。該組基準表面413可彼此成90度間隔配置，但是可配置成任何其他合適的間隔。可將該組基準表面413中的每一者控制為平坦的或大致平坦的。該組基準表面413中的每一者可大致平行於量規安裝塊410的該中央軸。從量規安裝塊410的中央軸到該組基準表面413中的每一者的距離可控制為相同或基本相同，以使該組基準表面413中的每一者可設置在相距量規安裝塊410的中央軸一相等的距離。該組基準表面413可用於供該組第二量規430設置歸零，將在以下更詳細地描述。
參照圖4B，該組第一量規420中的每一者可包括一刻度量規，該刻度量規可包括一量規主體422、連接到量規主體422的一可壓縮主軸424、以及設置在主軸424的端部處的一測量尖端426。該組第一量規420可經配置以獲得指示出大致垂直於量規安裝塊410的中央軸的平面與該組第一量規420中的每一者的測量點或測量尖端426之間的相對距離的測量值。透過該組第一量規420所獲得的測量值，可傳輸到腔室外的一遠端電腦。在一些實施例中，可無線地將測量值發送到腔室外的遠端電腦。在一些實施例中，每個第一量規420可包括能允許將測量值以藍牙® 或其他無線技術無線地發送到遠端電腦的部件。在一些實施例中，由該組第一量規420獲得的測量值可由腔室內的資料收集模組或部件，透過與每個第一量規420的有線連接或無線連接來收集。然後，可通過資料收集模組將收集的測量值無線地發送到腔室外的遠端電腦。資料收集模組可經配置以單獨地發送由每個第一量規420獲得的測量值，或者將由所有第一量規420獲得的測量值一起作為一組發送。在一些實施例中，由該組第一量規420獲得的測量值可使用有線連接傳輸到在腔室外的遠端電腦。在一些實施例中，資料收集模組可透過有線連接以連接到腔室外的遠端電腦。在一些實施例中，個別第一量規420可使用資料線連接到遠端電腦。在一些實施例中，多條資料線可用於將個別第一量規420連接到遠端電腦。在一些實施例中，在該組第一量規420與遠端電腦之間的有線連接可藉由多線電纜來建立，例如多線平面電纜或帶狀電纜。
量規主體422還可包括一頸部分423，用來藉由安裝夾具428及安裝支架429將每個第一量規420安裝至量規安裝塊410。安裝支架429可包括可大致彼此垂直地定向的兩個安裝部分。其中一個安裝部分可安裝到量規安裝塊410的安裝平台418上。每個第一量規420的頸部分423可由安裝夾具428保持，以將第一量規420安裝至安裝支架429上的該兩個垂直地佈置部分中的另一個。以此安裝配置，該組第一量規420中的每一者，或由該組第一量規420中的每一者的主軸424所定義出的該組第一量規420中的每一者的一軸，可經定向以大致平行於量規安裝塊410的中央軸。藉此定向，該組第一量規420可經配置以決定兩個平面之間的平行程度，該些平面可大致垂直於量規安裝塊410的中央軸，例如由在處理腔室的蓋堆疊內的一板構件的底表面所定義的平面，以及以下將更詳細地描述的由基座的頂表面所定義的平面。測量尖端426可包括一平坦尖端，以使當該組第一量規420可用於調平該基座時，該尖端不會延伸到由該板構件所定義的開孔內，如圖3所示的孔365、375。
繼續參照圖4B，該組第二量規430中的每一者可包括刻度量規，該刻度量規可包括量規主體432，連接到量規主體432的一可壓縮主軸434，以及設置在主軸434的端部處的一測量尖端436。該組第二量規430可經配置以獲得測量值，該測量值可指示出量規安裝塊410的中央軸與該組第二量規430的測量尖端436的測量點或尖端之間的相對距離。由該組第二量規430獲得的測量值可無線地及/或經由有線連接傳輸到腔室外的遠端電腦，類似於以上所述的該組第一量規420至遠端電腦的測量值的有線及/或無線傳輸。在一些實施例中，每個第二量規430可包括可允許將測量值無線傳輸到遠端電腦的部件。在一些實施例中，由該組第二量規430獲得的測量值可由腔室內的資料收集模組或部件來收集。資料收集模組可經配置以將每個第二量規430的測量值作為一組來單獨地或集體地收集及/或發送到遠端電腦。用於收集由該組第二量規430所獲得的測量值的該資料收集模組，可與用於收集由該組第一量規420所獲得的測量值的該資料收集模組相同或不同。當相同的資料收集模組可用於收集由該組第一量規420與該組第二量規430所獲得的測量值時，該資料收集模組可經配置以將每個第一量規420及每個第二量規430的測量值作為一組來單獨地或集體地收集及/或發送到遠端電腦。資料收集模組可透過有線連接或無線連接連接到第二量規430。然後，可通過資料收集模組無線地將所收集的測量值發送到腔室外的遠端電腦。在一些實施例中，由第二量規430所獲得的測量值可使用有線連接而傳輸到腔室外的遠端電腦。在一些實施例中，資料收集模組可使用有線連接連接到遠端電腦。在一些實施例中，資料線可用於將各個第二量規430連接至遠端電腦。在一些實施例中，一多線電纜，例如多線平面電纜或帶狀電纜，可用於將該組第二量規430與遠端電腦連接。該組第二量規430及該組第一量規420可使用共用的多線電纜或不同的多線電纜連接到遠端電腦。
將該組第一量規420及/或該組第二量規430所獲得的測量值無線地傳送，可有利在真空下對該基座定中心及/或調平，這將在以下面更詳細地說明。然而，透過適當地選擇及/或配置有線連接，也可實現在真空下對該基座定中心及/或調平。可應用供無線地或透過有線連接將該組第一量規420及/或該組第二量規430取得的測量值傳送到遠端電腦的其他各種資料傳輸方法及部件。
安裝夾具428可用來保持該組第二量規430中的每一者的一頸部分433，以將該組第二量規430中的每一者安裝至在該組基準表面413中的一基準表面413上方的安裝平台418。當安裝時，該組第二量規430中的每一者或其一軸（由該組第二量規430中的每一者的主軸434所定義的），可定向成大致垂直於下方的基準表面413。該組第二量規430的每一者的測量尖端436可徑向延伸超過基準表面413的下方。如上所述，該組基準表面413可大致平行於量規安裝塊410的中央軸。因此，該組第二量規430可定向成垂直於量規安裝塊410的中央軸，並且垂直於該組第一量規420的方位。以此配置，該組第二量規430可經配置以決定兩個構件之間的軸向對齊，例如處理腔室的蓋堆疊中的環構件與基座，如以下將更詳細地說明。測量尖端436可包括輥尖，以便當該組第二量規430可用於將基座如以下所述的定中心，該組第二量規430的測量尖端436可沿著處理腔室內的各種部件的表面滑動，而不會卡在各個部件之間的間隙中。
該組第一量規420可包括三個第一量規420。該組第二量規430可包括四個第二量規430。該些第一量規420與該些第二量規430可以交替的方式安裝。該些第二量規430可被安裝在量規安裝塊410上具有約90度的間隔。該些第一量規420可各自被安裝在兩個相鄰的第二量規430之間，且也具有約90度的間隔。雖然三個第一量規420及四個第二量規430被描述為示例，裝置400可包括多於三個第一量規420，及/或裝置400可包括三個或多於四個第二量規430。第一與第二量規420、430可隔開任何間隔角度。第一及/或第二量規420、430可隔開相同或不同的間隔角度。第一與第二量規420、430可以非交替方式配置，或以任何順序或序列來配置。
進一步參照圖4A及4B，定中心基準板440可包括一凸起部分，其特徵在於表面442可控制為平坦的或大致平坦的。表面442可用於供該組第二量規430中的每一者的歸零，如以下將更詳細地說明。定中心基準板440可使用緊固件或其他固定機構，而可釋放地連接或安裝在基座安裝塊410的安裝平台418上。在一些實施例中，可使用繫繩444以防止定中心基準板440的意外損失。繫繩444的長度可配置為允許定中心基準板440到達該組第二量規430中的每一者，以用來將第二量規歸零。該定中心基準板440可包括用於包裹繫繩444的凹槽446。該安裝平台418可定義出一凹槽448，凹槽448用於接收定中心基準板440的凸起部分。凹槽448的特徵可在於一深度尺寸，以使當定中心基準板440的凸起部分被容納在凹槽448內時，定中心基準板440的表面442可從凹槽448的底板上懸掛，以避免損壞表面442並保持其調平度。
參照圖 5A 與 5B ，調平基準板450可包括或者為薄的圓形板，儘管調平基準板450可採用任何其他合適的形狀。該可使用調平基準板450可與零設定器460一起使用，以供該組第一量規420中的每一者設定歸零，這將在以下更詳細地說明。調平基準板450可包括一第一側502，及與第一側502相對的一第二側504。第一側502可定義一第一表面505，且第二側504可定義一第二表面510。第一表面505與第二表面510可控制為平坦的或大致平坦的，以使第一表面505與第二表面510之間可達到高度的平行程度。第一表面505與第二表面510的平坦度及其之間的平行程度，如以下將更詳細地說明，可利於將處理腔室的基座調平。
該第一側502還可包括一對第一突片或圓突物515a、及一對第二突片520a、520b。該對第一突片515a、515b及該對第二突片520a、520b可具有相同或大致相同的高度，以當未使用調平基準板450時，將調平基準板450支撐在一支撐表面上。例如，當調平基準板450被存放時，調平基準板450可由該對第一突片515a、515b及該對第二突片520a、520b支撐在如圖4B所示的部件保持器405的一支撐表面445上。以此配置，調平基準板450的第一表面505可面向部件保持器405的支撐表面445，但不會與支撐表面445接觸。可最小化或防止對第一表面505的任何刮傷或其他損壞，並且可保持第一側502的平坦或大致平坦。該對第一突片515a、515b可各自定義出一通孔517a、517b，緊固件（如螺栓緊固件）可置入通孔517a、517b內，以將調平基準板450鎖固至部件夾持器405。為了防止可能由緊固件造成第二表面510的任何刮傷或其它損壞，第二側504可包括兩個凹槽518a、518b，經配置以接收螺栓緊固件的頭部，以使可保持第二表面510的平坦度。
該對第一突片515a、515b可定位在調平基準板450的周邊附近。該對第一突片515a、515b可在調平基準板450的圓周邊緣處沿直徑或對角線彼此相對地定位，如圖5A所示，但可定位在其他合適的位置。該對第二突片520a、520b可設置在相對更靠近調平基準板450的中心。該對第二突片520a、520b可在直徑上或對角線上彼此定位，例如圖5A中所示，但可定位在第一側502上任何合適的位置上。該對第二突片520a、520b可與該對第一突片515a、515b徑向對齊，如圖5A中所示，但在其他實施例中，不會與該對第一突片515a、515b徑向對齊。該對第二突片520a、520b可支撐零設定器460的重量，在存放期間，例如圖4B中所示，零設定器460可放置在調平基準板450的一中央區域。該對第二突片520a、520b可各自定義一通孔522a、522b。如以下將更詳細說明，通孔522a、522b可經配置以與零設定器460的兩個通孔對齊，以使兩個緊固件可置於穿過通孔522a、522b與零設定器460的通孔，如圖4B所示，以將零設定器460固定在調平基準板450與部件保持器405上。
調平基準板450可定義一對開口525a、525b及中心通孔530。如以下更詳細說明的，中心通孔530可由一操作者利用，以視覺地決定調平基準板450放在該基座上的位置，且如下所述，當調平基準板450及零設定器460可用來將處理腔室的基座調平時，該對開口525a、525b可經配置以接收零設定器460的一對突片。
雖然已揭示一對第一突片515a、515b，一對第二突片520a、520b，及一對開口525a、525b為示例，在各種實施例中，調平基準板450可包括一個或多於兩個第一突片515，一個或多於兩個第二突片，一個或多於兩個開口525。
調平基準板450的第二側504不包括突片，以使當調平基準板450放置在基座上時，調平基準板450的第二側504可面向基座並與基座直接接觸，以調平基座，如以下更詳細地說明。因為調平基準板450可放置在基座的頂表面上並與其直接接觸，以保護基座，調平基準板450可由相對柔軟的材料製成。在一些實施例中，調平基準板450可由塑料製成，例如任何熱塑性塑料，包括聚醚酰亞胺、聚醚醚酮、以及其他聚合材料，但可使用比基座材料更軟的其他材料。
參照圖 6A 及 6B ，零設定器460可包括一圓柱形主體610及一板構件630，當在存放或使用期間零設定器460放置在調平基準板450上時，板構件630由圓柱形主體610支撐。在一些實施例中，圓柱形主體610及板構件630可形成為整體，並且圓柱形主體610可經由一錐形部分650而過度成板構件630。零設定器460及調平基準板450可經配置以針對該組第一量規420中的每一者設定歸零，如以下更詳細地說明。
進一步參照圖6B，圓柱形主體610可包括第一側或底側611。該第一側可包括第一或底表面614、從第一表面614延伸的一對突片612a、612b，及形成在第一表面614中的一對凹槽616a、616b。圓柱形主體610的第一表面614可控制為平坦的或基本平坦的。當零設定器460放置在調平基準板450的第一表面505以將該組第一量規420歸零以調平該基座時，如以下更詳細地說明，該對突片612a、612b可經配置以容納在調平基準板450的該對開口525a、525b中。該對突片612a、612b中的每一者之特徵可在於一高度尺寸可小於調平基準板450的一厚度尺寸，該厚度尺寸由調平基準板450的第一表面505與第二表面510所定義。以此配置，當零設定器460的該對突片612a、612b會容納在調平基準板450的該對開口525a、525b內時，突片612不會延伸超過調平基準板450的第二表面510，以防止突片612刮傷基座表面。當零設定器460放置於調平基準板450的第一表面505上時，在調平基準板450的第一表面505上的該對第二突片520a、520b可容納在零設定器460的該對凹槽616a、616b中。
該對突片612a、612b的每一者可形成有通孔618a、618b，通孔618a、618b可與形成在調平基準板450內的通孔522a、522b的其中一者對齊。當調平基準板450及零設定器460存放時，零設定器460可放置在調平基準板450的第二表面510上，且零設定器460的通孔618a、618b與調平基準板450的通孔522a、522b對齊。然後，如圖 6C 所示，可將緊固件從零設定器460的第二側620放入通孔618a、618b及通孔522a、522b，以將零設定器460固定至調平基準板450與部件保持器405，如圖4B所示。在存放期間，因零設定器460被該對突片612a、612b支撐在調平基準板450的第二表面510上，零設定器460的圓柱形本體610的第一表面614與調平基準板450的第二表面510不會互相接觸。可保持圓柱形本體610的第一表面614及第二表面510的平坦或大致平坦，如以下更詳細地說明，以利於調平該基座。
儘管該對突片612a、612b及凹槽616a、616b被描述為示例性的配置，圓柱形本體610可配置有更多或更少數目的突片612及/或凹槽616。調平基準板450與零設定器460可形成有任何數量的突片612與對應的開孔525、任何數量的第二突片520與對應的凹槽616，及/或任何相應數量的通孔522、618。
進一步參照圖6B，板構件630可包括第一或底表面632。板構件630的第一表面632可控制為平坦的或基本平坦的。零設定器460可經配置以使板構件630的第一表面632可平行或大致平行於圓柱形本體610的第一表面614。板構件630的第一表面632與圓柱形主體610的第一表面614的平坦或大致的平坦，以及在它們之間的平行程度或實質平行程度，可有利於該組第一量規的歸零。當零設定器460被放置在調平基準板450上以將該組第一量規歸零時，零設定器460可放置在調平基準板450的第二表面510上，而如以下更詳細地說明，板構件630的第一表面632可面對該第二表面510與該基座。
參照圖 7A 所示，量規主軸壓縮器470可包括一環狀構件710及兩個把手730（只有一個在圖7A中示出）。環狀構件710可包括一第一或上表面712及相對於第一表面712的一第二或下表面714。量規主軸壓縮器470還可定義出在環狀構件710的第一表面712內的兩個凹槽716（只有一個顯示於圖7A中）。把手730可容納在凹槽716中並固定至每個凹槽716的底板，且把手730不會突出超過環狀構件710的第一表面712。儘管描述了兩個凹槽716及兩個把手730作為示例，但是在各種實施例中可包括任何數量的凹槽及/或把手。
參照圖 7B ，環狀構件710可進一步包括一第三或外表面718及一第四或錐形內表面720。錐形內表面720可經配置以向外朝向環狀構件710的第二表面714逐漸變細。如以下更詳細地說明，當量規主軸壓縮器470被至於處理腔室內以將基座進行定中心及/或調平時，錐形內表面720可經配置以壓縮該組第二量規430。環狀構件710還可包括一第五或非錐形表面部分722，其可與處理腔室的一蓋堆疊的一環構件的內表面對齊，如以下更詳細地說明。
圖 8 圖示出用於定中心及/或調平處理腔室的基座的示例性操作方法800，將結合圖 9A-9H 中的圖示進行描述。方法800可使用上述裝置400的各種部件來對基座進行定中心及/或調平。處理腔室可類似於上面參照圖2A描述的示例性處理腔室200。該處理腔室可包括一腔室主體及一蓋堆疊。蓋堆疊可經配置以打開並相對於該腔室主體關閉，以使當蓋堆疊被關閉時，在處理腔室內部的壓力可朝真空而減少。該基座可定位在該腔室主體內。蓋堆疊可包括一或多個板構件，例如面板、噴淋頭、或其他氣體分配組件。蓋疊可更包括一或多個圓柱形構件，例如一間隔環構件，當蓋疊層可關閉時，該間隔環構件可與該腔室主體接觸。
在操作步驟805，方法800可開始於透過將該組第二量規430歸零，也被稱為定中心量規組430。參照圖9A，定中心基準板440的表面442可被移動至與該組基準表面413的一個基準表面413接觸，以將置於一個基準表面413上的組第二量規430歸零。如以上所述，該組第二量規430的每一者的測量尖端436可經配置以徑向延伸超過基準表面413的下方。因此，當定中心基準板440的表面442會接觸基準表面413時，定中心基準板440的表面442亦會接觸在基準表面413上方的第二量規430的測量尖端436（由定中心基準板440觀之為阻擋的），並且會壓縮第二量規430的主軸434（由定中心基準板440觀之為阻擋的）。當被基準表面413壓縮時，第二量規430可被設定為讀取為零。對該組第二量規430的每個第二量規430可執行相同的操作。
一旦該組第二量規430被歸零時，此後獲得的測量值可表示測量點與受測量的第二量規430的下方的基準表面413之間的距離。如以上所述，可控制該組基準表面413，以使該組基準表面413中的每個基準表面413可位於與量規安裝塊410的中央軸相距一相等的距離處。因此，測量值可表示出在測量點與量規安裝塊410的中央軸之間的相對距離。如以下更詳細地說明，量規安裝塊410可被放置在一基座上，以使量規安裝塊410的中央軸可與該基座的中央軸對齊。因此，測量值還可指示出測量點與該基座的中央軸之間的相對距離。
在操作步驟810，如圖9B所示，調平基準板450可位在一處理腔室的腔室主體920內部的一基座910上。調平基準板450的中心通孔530可用來視覺地將調平基準板450定位在圍繞基座910的一中心區域處。在操作步驟810之前，可打開處理腔室的蓋堆疊（圖9B中未圖示），且可從腔室主體920移除泵送襯墊，類似於參照如上圖2A所述的泵送襯墊270。基座910的邊緣環，類似於參照如上圖2A所述的邊緣環266，亦可從基座910移除，以使量規安裝塊410可隨後被放置在基座910的凹下凸耳914上。泵送襯墊可擱置於其上的泵送通道930，係如圖9B所示。
當被放置在基座910上時，調平基準板450的第二表面510可面向，並直接接觸基座910。如上所述，第二表面510可控制為平坦的或大致平坦的，並且調平基準板450的第一表面505可控制為是平坦的或基本平坦的，並且平行於或大致平行於該第二表面510。因此，第一表面505可平行於或大致平行於基座910的頂表面912。
在操作步驟815，量規安裝塊410可放置在基座910上，如圖9C所示。量規安裝塊410可擱置在基座910的凹下凸耳914上。凹下凸耳914可定義出一數量的凹槽，例如三個，用來接收相應數量的定位銷於該邊緣環的底表面處，以將該邊緣環定位在基座910上。量規安裝塊410可包括從量規安裝塊410的側壁414的底表面突出的相應數量的定位銷。一個這樣的定位銷415，可如圖9A中所示，從側壁414的底表面突出。量規安裝塊410的定位銷，可定位成與每個邊緣環的定位銷的空間關係大致相同，以使其可容納在由基座910的凹下凸耳914所定義的凹槽內，且基座910的凹下凸耳914可支撐量規安裝塊410。此外，量規安裝塊410的定位銷可被定位在側壁414的底表面的合適的位置，以使當量規安裝塊410被置於基座910的凹下凸耳914上時，量規安裝塊410的中央軸與基座910的中央軸可對齊。
當量規安裝塊410可被設置在基座910上的非側壁414的底表面之處時，量規安裝塊410的其它表面或部件不會直接接觸基座910。一般而言，裝置400的各部件與腔室部件之間的接觸可被控制或減少，以保護腔室部件受摩擦或刮傷，這可能會產生會污染腔室中處理的基板的顆粒。為了實現這一點，如圖9F所示，量規安裝塊410的側壁414的一外徑可經配置以小於泵送通道930的一內徑。以此配置，當量規安裝塊410可放置在基座910上時，在側壁414與泵送通道930之間會具有一間隙，且側壁414的一外表面不會接觸泵送通道930或處理腔室的其它部件。側壁414的內徑可經配置以大於基板支撐盤916的一外徑，以使側壁414的一內表面不會接觸基座910的側表面918。如圖9E所示，該組第一量規420可經安裝以使當量規安裝塊410放置在基座910上時，在該組第一量規420與基座910之間可存在一間隙，以防止該組第一量規420接觸基座910的頂表面912。
在操作步驟820，如圖9D所示，零設定器460可放置在調平基準板450上。參照圖9E，零設定器460的圓柱形主體610的第一表面614可擱置並且直接接觸調平基準板450的第一表面505。零設定器460的該對突片612可放置在調平基準板450的該對開口525之內。如上所述，由調平基準板450的第一表面505與第二表面510所定義的調平基準板450的厚度可大於該對突片612的高度。因此，該對突片612不會延伸超過調平基準板450的第二表面510，並因此不會接觸基座910的頂表面912，以防止對基座910的任何損壞。
因為零定位器460的圓柱形主體610的第一表面614可擱置在調平基準板450的第一表面505上並且與調平基準板450的第一表面505直接接觸，並且因為調平基準板450的第一表面505可平行於或大致平行於基座910的頂表面912，圓柱形主體610的第一表面614可平行於或大致平行於基座910的頂表面912。因為板構件630的第一表面632可控制以平行於或大致平行於圓柱形主體610的第一表面614，板構件630的第一表面632可平行於或大致平行於基座910的頂表面912。
在操作步驟825中，該組第一量規420，亦稱為調平量規組420，如圖9E所示，可使用零設定器460來歸零。當零設定器460放置在調平基準板450上時，該組第一量規420中的每一者的主軸424可被零設定器460的板構件630的第一表面632壓縮。零設定器460可透過其重量或其他機構以保持定位，以便保持板構件630的第一表面632與調平基準板450的第一表面505之間的平行程度。儘管主軸424可被零設定器460壓縮，但該組第一量規420可相對於零設定器460的板構件630的第一表面632而歸零。因為板構件630的第一表面632可平行於或大致平行於基座910的頂表面912，一旦該組第一量規420被歸零時，之後所進行的測量可指示出測量點與基座910的頂表面912之間的相對距離。該組第一量規420的讀數的差異，可指示基座910的頂表面912與由測量點所定義的一平面之間的平行程度。在將該組第一量規420歸零之後，可移除零設定器460。
在操作步驟830，如圖9F所示，量規主軸壓縮器470可放置在泵送通道930上。再參照回圖9C，該組第二量規430可安裝在量規安裝塊410上，以使該組第二量規430的測量尖端436被置於泵送通道930上方。具體地，測量尖端436可比泵送通道930的內表面更徑向向外延伸，但不會徑向延伸超過泵送通道930的外表面。因此，如圖9F所示，當量規主軸壓縮器470被定位在泵送通道930上時，隨著測量尖端436的輥沿著量規主軸壓縮器470的錐形內表面720滑動，該組第二量規430的主軸434可被錐形內表面720逐漸壓縮。透過壓縮該組第二量規430的主軸434，可以減小主軸434的長度，以便隨後進入由處理腔室的間隔環940所定義的一區域，如圖9G所示。
如圖9F所示，由量規主軸壓縮器470的外表面718所定義的量規主軸壓縮器470的外徑可與由腔室主體920的一部分內表面所定義的腔室主體920的內徑大致相同或近似，腔室主體920會圍繞量規主軸壓縮器470。因此，當量規主軸壓縮器470壓縮第二量規430的主軸434時，量規主軸壓縮器470不會相對於泵送通道930移位。為了便於進入由間隔環940所定的區域，量規主軸壓縮器470的非錐形表面部分722可經配置有一內徑，以使非錐形表面部分722可以與間隔環940的內表面對齊，如圖9G所示。該組第二量規430的測量尖端436的輥還可以防止測量尖端436卡在間隔環940與量規主軸壓縮器470之間的間隙中。一旦量規主軸壓縮器470被放置在腔室主體920內的泵送通道930上時，則可關閉蓋堆疊，並且可以將該腔室抽成真空。
在操作步驟835，基座910可以升高或向上平移，使得該組第一量規420的測量尖端426可以接觸並被蓋堆疊中的板構件950壓縮，如圖9G所示，且基座910可以基於該組第一量規420的測量值進行調平。如上所述，該組第一量規420的測量尖端426可是平的，以確保它們不會進入由板構件950所定義的任何開孔內，但是可壓向板構件950的底表面960。板構件950可為蓋堆疊中設置在最下方的板構件950。取決於腔室配置，板構件950可為或包括氣體分配構件或板，例如面板、噴淋頭、或其他氣體分配組件。在操作步驟835，該組第二量規430也可進入由蓋堆疊的間隔環940所定義的區域中。
如以上述，該組第一量規420的該些測量值或讀數之間的差異，可指示出在基座910的頂表面912與由該些測量點所定義的一平面之間的一平行程度。當量規主軸424可以被板構件950的底表面960壓縮時，該組第一量規420的測量值之間的差異，可指示出基座910的頂表面912與板構件950的底表面960之間的平行程度。測量值或讀數可無線地或透過有線連接傳輸到腔室外的遠端裝置，例如攜帶電話、平板電腦、筆記型電腦等。然後，操作者可以使用基座910的水平調節螺釘來調節基座910的定向及/或傾斜，直到由該組第一量規420所獲得的所有讀數為讀取相同，指示出基座910的頂表面912可平行於或大致平行於板構件950的底表面960。因此，可將基座910或其頂表面912相對於板構件950或其底表面960而調平。
一旦基座910被調平後，基座910可降低以在該組第二量規430的測量尖端436與板構件950的底表面960之間產生一間隙或間隔，如圖9H所示，而該組第二量規430的測量尖端436仍然可以壓靠間隔環940的內表面。藉由此間隔，可以在隨後的基於來自該組第二量規430的讀數的定中心操作840期間，保護底表面960不被量規安裝塊410及/或該組第二量規430的測量尖端436的移動所刮傷。
在操作步驟840，基座910可基於來自該組第二量規430的讀數來定中心，其可無線地傳輸或經由有線連接傳輸到腔室外的遠端裝置。如上所述，該組第二量規430可包括間隔90度的四個第二量規430。換句話說，該組第二量規430包括兩對對角線定位的第二量規430。還如上所述，第二量規430的讀數或測量值可指示出在該些測量點與基座910的該中央軸之間的相對距離。因此，當操作者調整基座910的定中心調節螺釘，以使兩個對角線相對的第二量規430的讀數可調整為相等時，基座910可被定中心或與蓋堆疊中的間隔環940同軸對齊。
在一些實施例中，基座910可包括四個定中心調節螺釘。四個第二量規430中的每一者可與四個定中心調節螺釘中的一者基本上垂直對齊。在定中心調節螺釘和該組第二量規430之間的這種垂直對齊，可導致第二量規430的讀數的變化與由螺釘進行的調節之間的直接對應，這對於操作者而言更容易對基座910進行定中心。然而，可採用任何適當數量的第二量規430，並且該些第二量規430不會與基座910的定中心調整螺釘對齊。
一旦該基座910被定中心及/或調平，基座910會被降低。處理腔室的壓力可進入大氣，並且可打開該蓋堆疊。可從處理腔室中移除量規安裝塊410、量規主軸壓縮器470、及調平基準板450，並且可將該泵送襯墊放置回處理腔室內部。
測試已顯示一旦使用本案所述的裝置400及/或方法800來對處理腔室的基座進行定中心及/或調平，即使腔室可打開以移除裝置400，仍可保持基座及蓋堆疊部件之間的軸向對齊及/或基座與基座之間的平行。雖然定中心及/或調平操作可在真空下進行，但是也可在不降低腔室內的壓力的情況下，例如在大氣條件下，進行定中心及/或調平操作。
在前面的描述中，為了說明的目的，已闡述了許多細節以便提供對本案技術的各種實施例的理解。然而，對於本領域技術人員顯而易見的是，可在沒有某些這種細節或者附加細節的情況下實施特定實施例。
已揭示了數個實施例，本領域技術人員將能理解，在不脫離實施例的精神的情況下，可以使用各種修改、替代構造、及均等物。另外，未描述許多眾所周知的製程及元件，以避免不必要地模糊本案技術。因此，以上說明不應被視為限制本案技術的範圍。另外，方法或製程可被描述為具有順序或步驟，但是應該理解，操作步驟可同時執進行，或者以與所列出的順序不同的方式進行。
在提供一數值範圍的情況下，應理解的是，除非上下文另有明確規定，否則還具體公開了該範圍的上限與下限之間的每個中間值，以至於下限單位的最小部分。在所述範圍內的任何描述值或未描述的中間值，及所述範圍內的任何其他描述值或中間值之間的任何較窄範圍都包括在內。這些較小範圍的上限及下限可獨立地包括或排除在該範圍內，並且在較小範圍中包括任一個、兩個，或者上限及下限的每個範圍也包括在本案技術內，且受限於在所述範圍內的任何特別排除的值。若所述的範圍包括一個或兩個限制，則還包括排除這些限制中的一個或兩個的範圍。
除非上下文另有明確規定，本案中及所附申請專利範圍中所使用的單數形式「一」、「一個」、及「該」，包括了複數形式的引用。因此，例如，若提及「前驅物」包括複數個這樣的前驅物，並且若提及「該層」包括一個或複數個層及其本領域技術人員已知的均等物等。
此外，當在本說明書及以下申請專利範圍中所使用的用語「包括」、「包含」、及「含有」，旨在指定所主張的特徵、整體、部件、或操作的事實，但它們不排除具有或增加一或多個其他特徵、整體、部件、操作、動作或群組。
100:處理系統 102:前開口統一盒 104:機械臂 106:保持區域 108a-f:基板處理腔室 109a-c:串聯區段 110:第二機械臂 200:處理腔室 201:遠程電漿系統（RPS） 203:冷卻板 205:氣體入口部件 210:流體供應系統 214:上板 215:第一電漿區域 216:下板 217:面板 218:容積 219:第一流體通道 220:絕緣環 221:第二流體通道 223:離子抑制器 225:噴淋頭 233:基板處理區域 240:電源 253:視圖 255:基板 258:供應區域 259:開孔 265:基座 266:邊緣環 270:泵送襯墊 280:間隔環 325:噴淋頭 365:通孔 375:小孔 400:裝置 405:部件保持器 410:量規安裝塊 411:把手 412:環狀主體 413:基準表面 414:側壁 415:定位銷 416:環狀凸緣 418:安裝平台 420:第一量規 422:量規主體 423:頸部分 424:可壓縮主軸 426:測量尖端 428:安裝夾具 429:安裝支架 430:第二量規 432:量規主體 434:可壓縮主軸 436:測量端頭 440:定中心基準板 442:表面 444:繫繩 445:支撐表面 446:凹槽 448:凹槽 450:調平基準板 460:零設定器 470:量規主軸壓縮器 502:第一側 504:第二側 505:第一表面 510:第二表面 515a、515b:第一突片/圓突物 517a、517b:通孔 518a、518b:凹槽 520a、520b:第二突片 522:通孔 522a、522b:通孔 525:開口 525a、525b:開口 530:中心通孔 610:圓柱形主體 611:底側 612a、612b:突片 614:第一表面 616a、616b:凹槽 618:通孔 618a、618b:通孔 620:第二側 630:板構件 632:第一表面 650:錐形部分 710:環狀構件 712:上表面 714:下表面 716:凹槽 718:外表面 720:錐形內表面 722:非錐形表面部分 730:把手 800:方法 805~840:操作步驟 910:基座 912:頂表面 914:凹下凸耳 916:基板支撐盤 918:側表面 920:腔室主體 930:泵送通道 940:間隔環 950:板構件 960:底表面
可藉由參照說明書及附圖的其餘部分，對於所揭示的技術的本質及優點能有進一步理解。
圖1圖示出根據本案技術的實施例的示例性處理系統的一個實施例的俯視圖。
圖2A圖示出根據本案技術的實施例的示例性處理腔室的示意性剖視圖。
圖2B圖示出根據本案技術的實施例的圖2A中所示的處理腔室的一部分的詳細視圖。
圖3圖示出根據本案技術的實施例的示例性噴淋頭的底部平面圖。
圖4A圖示出根據本案技術的實施例的用於對處理腔室的基座進行定中心及/或調平的示例性裝置的立體圖。
圖4B圖示出圖4A中所示裝置的剖視圖。
圖5A圖示出根據本案技術的實施例的圖4A及4B中所示的示例性裝置的示例性基準板的頂部立體圖。
圖5B圖示出圖5A中所示的基準板的底部立體圖。
圖6A圖示出根據本案技術的實施例的圖4A及4B中所示的示例性裝置的示例性零設定器的頂部立體圖。
圖6B圖示出圖6A中所示的零設定器的底部立體圖。
圖6C圖示出圖6A中所示的零設定器的立體橫截面視圖。
圖7A圖示出根據本案技術的實施例的圖4A及4B中所示的示例性裝置的示例性量規主軸壓縮器的立體橫截面圖。
圖7B圖示出圖7A中所示的量規主軸壓縮器的一部分的放大視圖。
圖8圖示出根據本案技術的實施例的用於使處理腔室的基座定中心及/或調平的方法中的示例性操作。
圖9A-9H圖示出圖8的方法的選擇操作，使用根據本案技術的實施例的圖4A及4B中所示的示例性裝置的各種部件。
所包含的若干附圖為示意性的。應能理解，附圖僅用於說明的目的，除非特別說明為比例，否則不應視為其為真正的比例。另外，作為示意圖，提供附圖是為了幫助理解，並且可能不包括與真實表示相比的所有態樣或資訊，並且可能包括用於說明目的誇飾的內容。
在附圖中，相似的部件及/或功能可具有相同的參照標號。此外，可透過在參照標號之後用區分相似部件的字母來區分相同類型的各種部件。若在說明書中僅使用第一參照標籤，則該描述適用於具有相同第一參照標籤的任何一個類似部件，而與該字母無關。
國內寄存資訊 （請依寄存機構、日期、號碼順序註記） 無
國外寄存資訊 （請依寄存國家、機構、日期、號碼順序註記） 無
400:裝置
405:部件保持器
410:量規安裝塊
411:把手
412:環狀主體
413:基準表面
414:側壁
416:環狀凸緣
418:安裝平台
420:第一量規
430:第二量規
434:可壓縮主軸
436:測量端頭
440:定中心基準板
442:表面
444:繫繩
445:支撐表面
446:凹槽
448:凹槽
450:調平基準板
460:零設定器
470:量規主軸壓縮器

Claims (20)

  1. 一種裝置，包括： 一環狀安裝塊，該環狀安裝塊具有一中央軸，圍繞該中央軸的一側壁，以及從該側壁朝向該中央軸徑向向內延伸的一安裝平台； 複數個第一量規，係安裝在該安裝平台上，以使該複數個第一量規經定向成大致平行於該中央軸，該複數個第一量規係配置以獲得一第一複數個測量值，該第一複數個測量值指示出在大致垂直於該環狀安裝塊的該中央軸的一平面與測量點之間的相對距離；及 複數個第二量規，係安裝在該安裝平台上，以使該複數個第二量規經定向成大致垂直於該中央軸，並且該複數個第二量規的每個第二量規的一測量尖端徑向地延伸超過該環狀安裝塊的該側壁，該複數個第二量規係配置以獲得一第二複數個測量值，該第二複數個測量值指示出在該環狀安裝塊的該中央軸與測量點之間的相對距離。
  2. 如請求項1所述的裝置，其中該複數個第一量規包括至少三個刻度量規，並且其中該複數個第二量規包括至少三個刻度量規。
  3. 如請求項1所述的裝置，其中該複數個第一量規中的每個第一量規的一測量尖端包括一扁平尖端，並且其中所述該複數個第二量規中的每個第二量規的該測量尖端包括一輥尖。
  4. 如請求項1所述的裝置，其中該環狀安裝塊的該側壁的特徵在於複數個基準表面，其中該複數個基準表面的每個基準表面大致平行於該環狀安裝塊的該中央軸並且定位在距離該環狀安裝塊的該中央軸的一相同距離處，並且其中該複數個第二量規的每個第二量規係安裝在該複數個基準表面的一個基準表面上方，以使該複數個第二量規的每個第二量規的該測量尖端徑向地延伸超出該複數個基準表面的該基準表面的下方。
  5. 如請求項1所述的裝置，還包括一基準板，該基準板具有以一平坦表面為特徵的一凸起部分，其中該基準板可釋放地附接到該環狀安裝塊的該安裝平台，其中該環狀安裝塊定義一凹槽，以使當該基準板係附接到該環狀安裝塊時，該基準板的該凸起部分被容納在該環狀安裝塊的該凹槽內，並且該平坦表面面向該凹槽的一底板並從該凹槽的該底板上被懸掛。
  6. 如請求項1所述的裝置，還包括：一量規主軸壓縮器，其可定位在該環狀安裝塊的該中央軸周圍，並定義出一錐形內表面，其中該錐形內表面經配置以當該量規主軸壓縮器被定位圍繞該環狀安裝塊的該中央軸，且該環狀安裝塊沿著該環狀安裝塊的該中央軸平移時，壓縮該複數個第二量規的每個第二量規的一量規主軸。
  7. 如請求項1所述的裝置，還包括： 一調平基準板，其特徵在於： 一第一表面； 一第二表面，其相對於該第一表面；及 複數個開口； 一零設定器，該零設定器包括： 一圓柱形主體，具有從該圓柱形主體的一第一表面延伸的複數個突片，其中該零設定器的該複數個突片中的每個突片經配置以容納在該調平基準板的複數個開口的一開口中，並且其中該複數個突片中的每個突片的特徵在於，一高度尺寸小於由該調平基準板的該第一表面及該第二表面所定義出的該調平基準板的一厚度尺寸，以使當該零設定器的該複數個突片被容納在該調平基準板的該複數個開口中時，該複數個突片不延伸超過該調平基準板的該第二表面；及 一板構件，係由該圓柱形主體支撐，其中當該零設定器的該複數個突片被容納在該調平基準板的該複數個開口中時，該零設定器由該調平基準板支撐，以使該零設定器的該板構件的一第一表面係平行於該調平基準板的該第一表面。
  8. 一種方法，包括以下步驟： 藉由複數個第一刻度量規收集一第一組測量值，該些第一組測量值指示出在一半導體處理腔室的一氣體分配構件處與該半導體處理腔室的一基座的一頂表面處的複數個位置之間的相對距離；及 基於該第一組測量值，調節該基座到一第一位置，以使該基座的該頂表面大致平行於該氣體分配構件的一底表面。
  9. 如請求項8所述的方法，還包括以下步驟： 在收集該第一組測量值之前，將該半導體處理腔室內的一壓力降低到真空。
  10. 如請求項8所述的方法，還包括以下步驟： 升高該基座以將該複數個第一刻度量規的每個第一刻度量規的一量規主軸的一扁平尖端定位成與該氣體分配構件的該底表面接觸。
  11. 如請求項8所述的方法，還包括以下步驟： 使該複數個第一刻度量規相對於該基座的該頂表面歸零。
  12. 如請求項8所述的方法，還包括以下步驟： 藉由複數個第二刻度量規收集一第二組測量值，該些第二組測量值指示出在該半導體處理腔室的一環構件處與該基座的一中央軸處的複數個位置之間的相對距離；及 基於該第二組測量值，調節該基座到一第二位置，以使該基座的該中央軸與該環構件的一中央軸對齊。
  13. 如請求項12所述的方法，還包括以下步驟： 將一量規主軸壓縮器放置在該半導體處理腔室的一腔室主體內，其中該量規主軸壓縮器包括一錐形內表面；及 升高該基座以使該複數個第二刻度量規的每個第二刻度量規的一量規主軸的一輥尖沿著該錐形內表面滑動，並且通過該錐形內表面，直到該複數個第二刻度量規的每個第二刻度量規的該量規主軸的該輥尖被定位成抵向該半導體處理腔室的該環構件的一內表面。
  14. 如請求項12所述的方法，其中該複數個第一刻度量規與該複數個第二刻度量規係安裝在一安裝塊上，該方法還包括以下步驟： 將該安裝塊放置在該基座周圍，其中該安裝塊包括複數個突片，以容納在該基座的複數個凹槽內，以使當該安裝塊圍繞該基座放置時，該安裝塊的一中央軸與該基座的該中央軸對齊。
  15. 一種裝置，包括： 一量規安裝塊； 複數個第一量規，安裝在該量規安裝塊上，該複數個第一量規配置以獲得指示出一半導體處理腔室的一蓋堆疊的一第一部件與該半導體處理腔室的一基座之間的一平行程度的測量值；及 複數個第二量規，安裝在該量規安裝塊上，該複數個第二量規配置以獲得指示出該蓋堆疊的一第二部件與該基座之間的一軸向對齊程度的測量值。
  16. 如請求項15所述的裝置，其中該半導體處理腔室還包括，一腔室主體，其中該蓋堆疊經配置以相對於該腔室主體打開及關閉，以使當該蓋堆疊關閉時，該半導體處理腔室內的壓力可朝向真空減小，其中複數個第一量規係配置以獲得指示出在真空下的該蓋堆疊的該第一部件與該基座之間的該平行程度的測量值，並且其中該複數個第二量規係配置以獲得指示出在真空下的該蓋堆疊的該第二部件與該基座之間的該軸向對齊程度。
  17. 如請求項15所述的裝置，其中該量規安裝塊包括一中央軸，圍繞該中央軸的一側壁，以及從該側壁朝向該中央軸徑向向內延伸的一安裝平台，其中該複數個第一量規及該複數個第二量規係安裝在該安裝平台上，並且其中該複數個第二量規經定向成大致垂直於該複數個第一量規。
  18. 如請求項15所述的裝置，還包括一量規主軸壓縮器，配置以設置成圍繞該基座的一中央軸，其中該量規主軸壓縮器包括一錐形內表面，該錐形內表面經配置以接合並壓縮該複數個第二量規中的每個第二個量規的一輥尖。
  19. 如請求項15所述的裝置，其中該蓋堆疊的該第一部件包括一板構件，且其中該板構件的一下表面與該基座的一上表面之間的該平行程度係經決定的。
  20. 如請求項15所述的裝置，其中該蓋堆疊的該第二部件包括一環構件。
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