|
CN1858839B
(zh)
|
2005-05-02 |
2012-01-11 |
株式会社半导体能源研究所 |
显示装置的驱动方法
|
|
EP1724751B1
(en)
|
2005-05-20 |
2013-04-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device and electronic apparatus
|
|
US8059109B2
(en)
|
2005-05-20 |
2011-11-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and electronic apparatus
|
|
US8008670B2
(en)
|
2006-02-21 |
2011-08-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Light emitting device
|
|
JP5542297B2
(ja)
|
2007-05-17 |
2014-07-09 |
株式会社半導体エネルギー研究所 |
液晶表示装置、表示モジュール及び電子機器
|
|
US8803781B2
(en)
*
|
2007-05-18 |
2014-08-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and display device
|
|
KR101345376B1
(ko)
|
2007-05-29 |
2013-12-24 |
삼성전자주식회사 |
ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
|
|
US8354674B2
(en)
*
|
2007-06-29 |
2013-01-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
|
|
JP5377940B2
(ja)
*
|
2007-12-03 |
2013-12-25 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP5217469B2
(ja)
*
|
2008-02-04 |
2013-06-19 |
ソニー株式会社 |
表示装置
|
|
US8101442B2
(en)
*
|
2008-03-05 |
2012-01-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing EL display device
|
|
JP5467728B2
(ja)
*
|
2008-03-14 |
2014-04-09 |
富士フイルム株式会社 |
薄膜電界効果型トランジスタおよびその製造方法
|
|
US8247315B2
(en)
|
2008-03-17 |
2012-08-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Plasma processing apparatus and method for manufacturing semiconductor device
|
|
JP5331382B2
(ja)
*
|
2008-05-30 |
2013-10-30 |
富士フイルム株式会社 |
半導体素子の製造方法
|
|
KR101394541B1
(ko)
*
|
2008-06-05 |
2014-05-13 |
삼성디스플레이 주식회사 |
유기 박막트랜지스터, 그의 제조방법 및 이를 구비한유기발광표시장치
|
|
TWI500159B
(zh)
|
2008-07-31 |
2015-09-11 |
Semiconductor Energy Lab |
半導體裝置和其製造方法
|
|
TWI450399B
(zh)
|
2008-07-31 |
2014-08-21 |
半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
JP5616038B2
(ja)
*
|
2008-07-31 |
2014-10-29 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
TWI626744B
(zh)
|
2008-07-31 |
2018-06-11 |
半導體能源研究所股份有限公司 |
半導體裝置及半導體裝置的製造方法
|
|
US8945981B2
(en)
|
2008-07-31 |
2015-02-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
TWI500160B
(zh)
|
2008-08-08 |
2015-09-11 |
Semiconductor Energy Lab |
半導體裝置及其製造方法
|
|
JP5525778B2
(ja)
|
2008-08-08 |
2014-06-18 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP5480554B2
(ja)
*
|
2008-08-08 |
2014-04-23 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
TWI508282B
(zh)
|
2008-08-08 |
2015-11-11 |
Semiconductor Energy Lab |
半導體裝置及其製造方法
|
|
TWI511299B
(zh)
|
2008-09-01 |
2015-12-01 |
半導體能源研究所股份有限公司 |
半導體裝置的製造方法
|
|
JP5627071B2
(ja)
|
2008-09-01 |
2014-11-19 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
KR20160063402A
(ko)
|
2008-09-12 |
2016-06-03 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
디스플레이 장치
|
|
KR20110056542A
(ko)
*
|
2008-09-12 |
2011-05-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
|
KR101772377B1
(ko)
|
2008-09-12 |
2017-08-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
|
WO2010032602A1
(en)
|
2008-09-18 |
2010-03-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR101681882B1
(ko)
*
|
2008-09-19 |
2016-12-05 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시장치
|
|
CN103400838B
(zh)
|
2008-09-19 |
2016-03-30 |
株式会社半导体能源研究所 |
显示装置
|
|
KR101563527B1
(ko)
|
2008-09-19 |
2015-10-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체장치
|
|
WO2010038566A1
(ja)
*
|
2008-09-30 |
2010-04-08 |
コニカミノルタホールディングス株式会社 |
薄膜トランジスタおよびその製造方法
|
|
KR101961632B1
(ko)
|
2008-10-03 |
2019-03-25 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시장치
|
|
EP2172977A1
(en)
|
2008-10-03 |
2010-04-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
|
WO2010038819A1
(en)
|
2008-10-03 |
2010-04-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
|
CN101719493B
(zh)
*
|
2008-10-08 |
2014-05-14 |
株式会社半导体能源研究所 |
显示装置
|
|
WO2010044478A1
(en)
|
2008-10-16 |
2010-04-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Light-emitting display device
|
|
JP5361651B2
(ja)
*
|
2008-10-22 |
2013-12-04 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
JP5616012B2
(ja)
|
2008-10-24 |
2014-10-29 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
KR102251817B1
(ko)
|
2008-10-24 |
2021-05-12 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제조 방법
|
|
US8106400B2
(en)
|
2008-10-24 |
2012-01-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
JP5442234B2
(ja)
|
2008-10-24 |
2014-03-12 |
株式会社半導体エネルギー研究所 |
半導体装置及び表示装置
|
|
EP2180518B1
(en)
*
|
2008-10-24 |
2018-04-25 |
Semiconductor Energy Laboratory Co, Ltd. |
Method for manufacturing semiconductor device
|
|
KR101603303B1
(ko)
|
2008-10-31 |
2016-03-14 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
도전성 산질화물 및 도전성 산질화물막의 제작 방법
|
|
KR101634411B1
(ko)
|
2008-10-31 |
2016-06-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
구동 회로, 표시 장치 및 전자 장치
|
|
KR101631454B1
(ko)
|
2008-10-31 |
2016-06-17 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
논리회로
|
|
EP2184783B1
(en)
|
2008-11-07 |
2012-10-03 |
Semiconductor Energy Laboratory Co, Ltd. |
Semiconductor device and method for manufacturing the same
|
|
TW201921700A
(zh)
|
2008-11-07 |
2019-06-01 |
日商半導體能源研究所股份有限公司 |
半導體裝置和其製造方法
|
|
JP5587592B2
(ja)
*
|
2008-11-07 |
2014-09-10 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
TWI487104B
(zh)
|
2008-11-07 |
2015-06-01 |
半導體能源研究所股份有限公司 |
半導體裝置和其製造方法
|
|
CN101740631B
(zh)
*
|
2008-11-07 |
2014-07-16 |
株式会社半导体能源研究所 |
半导体装置及该半导体装置的制造方法
|
|
JP2010135771A
(ja)
|
2008-11-07 |
2010-06-17 |
Semiconductor Energy Lab Co Ltd |
半導体装置及び当該半導体装置の作製方法
|
|
KR20110084523A
(ko)
|
2008-11-07 |
2011-07-25 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR101432764B1
(ko)
*
|
2008-11-13 |
2014-08-21 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체장치의 제조방법
|
|
JP2010153802A
(ja)
|
2008-11-20 |
2010-07-08 |
Semiconductor Energy Lab Co Ltd |
半導体装置及び半導体装置の作製方法
|
|
TWI585955B
(zh)
|
2008-11-28 |
2017-06-01 |
半導體能源研究所股份有限公司 |
光感測器及顯示裝置
|
|
TWI616707B
(zh)
|
2008-11-28 |
2018-03-01 |
半導體能源研究所股份有限公司 |
液晶顯示裝置
|
|
KR101472771B1
(ko)
|
2008-12-01 |
2014-12-15 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
|
JP2010156960A
(ja)
|
2008-12-03 |
2010-07-15 |
Semiconductor Energy Lab Co Ltd |
液晶表示装置
|
|
JP5491833B2
(ja)
|
2008-12-05 |
2014-05-14 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
KR101609727B1
(ko)
|
2008-12-17 |
2016-04-07 |
삼성디스플레이 주식회사 |
박막 트랜지스터 표시판 및 이의 제조 방법
|
|
CN103456794B
(zh)
|
2008-12-19 |
2016-08-10 |
株式会社半导体能源研究所 |
晶体管的制造方法
|
|
WO2010071183A1
(en)
|
2008-12-19 |
2010-06-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
EP2202802B1
(en)
*
|
2008-12-24 |
2012-09-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Driver circuit and semiconductor device
|
|
US8441007B2
(en)
|
2008-12-25 |
2013-05-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and manufacturing method thereof
|
|
US8114720B2
(en)
|
2008-12-25 |
2012-02-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US8383470B2
(en)
|
2008-12-25 |
2013-02-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Thin film transistor (TFT) having a protective layer and manufacturing method thereof
|
|
JP5590877B2
(ja)
|
2008-12-26 |
2014-09-17 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
TWI474408B
(zh)
*
|
2008-12-26 |
2015-02-21 |
半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
JP5607349B2
(ja)
*
|
2008-12-26 |
2014-10-15 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
KR101648927B1
(ko)
|
2009-01-16 |
2016-08-17 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
|
US8492756B2
(en)
|
2009-01-23 |
2013-07-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
JP5514447B2
(ja)
*
|
2009-01-29 |
2014-06-04 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US8436350B2
(en)
|
2009-01-30 |
2013-05-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device using an oxide semiconductor with a plurality of metal clusters
|
|
US8367486B2
(en)
*
|
2009-02-05 |
2013-02-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor and method for manufacturing the transistor
|
|
CN101840936B
(zh)
*
|
2009-02-13 |
2014-10-08 |
株式会社半导体能源研究所 |
包括晶体管的半导体装置及其制造方法
|
|
US8278657B2
(en)
*
|
2009-02-13 |
2012-10-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
|
|
US8247812B2
(en)
|
2009-02-13 |
2012-08-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
|
|
US8247276B2
(en)
|
2009-02-20 |
2012-08-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Thin film transistor, method for manufacturing the same, and semiconductor device
|
|
US8841661B2
(en)
*
|
2009-02-25 |
2014-09-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
|
|
US20100224880A1
(en)
*
|
2009-03-05 |
2010-09-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US8461582B2
(en)
|
2009-03-05 |
2013-06-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
US20100224878A1
(en)
|
2009-03-05 |
2010-09-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP5504008B2
(ja)
|
2009-03-06 |
2014-05-28 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
KR102342672B1
(ko)
*
|
2009-03-12 |
2021-12-24 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
TWI556323B
(zh)
|
2009-03-13 |
2016-11-01 |
半導體能源研究所股份有限公司 |
半導體裝置及該半導體裝置的製造方法
|
|
US8450144B2
(en)
|
2009-03-26 |
2013-05-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
KR101681884B1
(ko)
|
2009-03-27 |
2016-12-05 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체장치, 표시장치 및 전자기기
|
|
TWI529942B
(zh)
*
|
2009-03-27 |
2016-04-11 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
US8927981B2
(en)
|
2009-03-30 |
2015-01-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
US8338226B2
(en)
*
|
2009-04-02 |
2012-12-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
TWI489628B
(zh)
|
2009-04-02 |
2015-06-21 |
半導體能源研究所股份有限公司 |
半導體裝置和其製造方法
|
|
US8441047B2
(en)
*
|
2009-04-10 |
2013-05-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
CN102422426B
(zh)
*
|
2009-05-01 |
2016-06-01 |
株式会社半导体能源研究所 |
半导体装置的制造方法
|
|
JP5760298B2
(ja)
*
|
2009-05-21 |
2015-08-05 |
ソニー株式会社 |
薄膜トランジスタ、表示装置、および電子機器
|
|
JP5564331B2
(ja)
|
2009-05-29 |
2014-07-30 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
EP2256814B1
(en)
|
2009-05-29 |
2019-01-16 |
Semiconductor Energy Laboratory Co, Ltd. |
Oxide semiconductor device and method for manufacturing the same
|
|
EP2256795B1
(en)
|
2009-05-29 |
2014-11-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method for oxide semiconductor device
|
|
EP2449594B1
(en)
|
2009-06-30 |
2019-08-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
WO2011001881A1
(en)
|
2009-06-30 |
2011-01-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
KR102096109B1
(ko)
|
2009-07-03 |
2020-04-01 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치의 제작 방법
|
|
KR101476817B1
(ko)
|
2009-07-03 |
2014-12-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
트랜지스터를 갖는 표시 장치 및 그 제작 방법
|
|
JP5663214B2
(ja)
*
|
2009-07-03 |
2015-02-04 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
KR101460868B1
(ko)
|
2009-07-10 |
2014-11-11 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR101422362B1
(ko)
|
2009-07-10 |
2014-07-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치, 표시 패널 및 전자 기기
|
|
KR101935752B1
(ko)
|
2009-07-10 |
2019-01-04 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치의 제작 방법
|
|
KR101739154B1
(ko)
|
2009-07-17 |
2017-05-23 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제조 방법
|
|
WO2011007677A1
(en)
|
2009-07-17 |
2011-01-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
WO2011007682A1
(en)
|
2009-07-17 |
2011-01-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing semiconductor device
|
|
CN102473733B
(zh)
|
2009-07-18 |
2015-09-30 |
株式会社半导体能源研究所 |
半导体装置以及制造半导体装置的方法
|
|
KR101907366B1
(ko)
*
|
2009-07-18 |
2018-10-11 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치 제조 방법
|
|
WO2011010545A1
(en)
*
|
2009-07-18 |
2011-01-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
KR101782176B1
(ko)
|
2009-07-18 |
2017-09-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제조 방법
|
|
WO2011010542A1
(en)
|
2009-07-23 |
2011-01-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
KR101785992B1
(ko)
*
|
2009-07-24 |
2017-10-18 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR102215941B1
(ko)
|
2009-07-31 |
2021-02-16 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
|
WO2011013502A1
(en)
|
2009-07-31 |
2011-02-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
WO2011013596A1
(en)
|
2009-07-31 |
2011-02-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
WO2011013523A1
(en)
|
2009-07-31 |
2011-02-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
KR101291434B1
(ko)
|
2009-07-31 |
2013-08-07 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 디바이스 및 그 형성 방법
|
|
TWI604594B
(zh)
|
2009-08-07 |
2017-11-01 |
半導體能源研究所股份有限公司 |
半導體裝置及包括該半導體裝置之電話、錶、和顯示裝置
|
|
EP2284891B1
(en)
|
2009-08-07 |
2019-07-24 |
Semiconductor Energy Laboratory Co, Ltd. |
Semiconductor device and manufacturing method thereof
|
|
JP5663231B2
(ja)
|
2009-08-07 |
2015-02-04 |
株式会社半導体エネルギー研究所 |
発光装置
|
|
TWI529914B
(zh)
*
|
2009-08-07 |
2016-04-11 |
半導體能源研究所股份有限公司 |
半導體裝置和其製造方法
|
|
TWI596741B
(zh)
*
|
2009-08-07 |
2017-08-21 |
半導體能源研究所股份有限公司 |
半導體裝置和其製造方法
|
|
TWI559501B
(zh)
*
|
2009-08-07 |
2016-11-21 |
半導體能源研究所股份有限公司 |
半導體裝置和其製造方法
|
|
WO2011024770A1
(ja)
|
2009-08-26 |
2011-03-03 |
株式会社アルバック |
半導体装置、半導体装置を有する液晶表示装置、半導体装置の製造方法
|
|
US8115883B2
(en)
|
2009-08-27 |
2012-02-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and method for manufacturing the same
|
|
WO2011027649A1
(en)
|
2009-09-02 |
2011-03-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including a transistor, and manufacturing method of semiconductor device
|
|
WO2011027676A1
(en)
|
2009-09-04 |
2011-03-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
WO2011027702A1
(en)
|
2009-09-04 |
2011-03-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Light-emitting device and method for manufacturing the same
|
|
WO2011027701A1
(en)
|
2009-09-04 |
2011-03-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Light-emitting device and method for manufacturing the same
|
|
US9805641B2
(en)
|
2009-09-04 |
2017-10-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and electronic device including the same
|
|
CN102598283B
(zh)
|
2009-09-04 |
2016-05-18 |
株式会社半导体能源研究所 |
半导体器件及其制造方法
|
|
CN104681447A
(zh)
|
2009-09-04 |
2015-06-03 |
株式会社半导体能源研究所 |
半导体器件的制造方法
|
|
WO2011027656A1
(en)
*
|
2009-09-04 |
2011-03-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor and display device
|
|
WO2011027661A1
(en)
*
|
2009-09-04 |
2011-03-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Light-emitting device and method for manufacturing the same
|
|
WO2011027664A1
(en)
*
|
2009-09-04 |
2011-03-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device and method for manufacturing the same
|
|
KR101519893B1
(ko)
|
2009-09-16 |
2015-05-14 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
트랜지스터
|
|
KR20230165355A
(ko)
|
2009-09-16 |
2023-12-05 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
|
WO2011034012A1
(en)
|
2009-09-16 |
2011-03-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Logic circuit, light emitting device, semiconductor device, and electronic device
|
|
KR102057221B1
(ko)
|
2009-09-16 |
2019-12-18 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제조 방법
|
|
KR102113064B1
(ko)
|
2009-09-16 |
2020-05-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
발광 장치 및 이의 제조 방법
|
|
WO2011037008A1
(en)
|
2009-09-24 |
2011-03-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device
|
|
KR101707260B1
(ko)
|
2009-09-24 |
2017-02-15 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR101608923B1
(ko)
|
2009-09-24 |
2016-04-04 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
산화물 반도체막 및 반도체 장치
|
|
KR101827687B1
(ko)
|
2009-09-24 |
2018-02-08 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
구동 회로, 상기 구동 회로를 포함하는 표시 장치, 및 상기 표시 장치를 포함하는 전자 기기
|
|
EP2481089A4
(en)
|
2009-09-24 |
2015-09-23 |
Semiconductor Energy Lab |
SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
|
|
WO2011036987A1
(en)
|
2009-09-24 |
2011-03-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
|
US9024312B2
(en)
|
2009-09-30 |
2015-05-05 |
Dai Nippon Printing Co., Ltd. |
Substrate for flexible device, thin film transistor substrate for flexible device, flexible device, substrate for thin film element, thin film element, thin film transistor, method for manufacturing substrate for thin film element, method for manufacturing thin film element, and method for manufacturing thin film transistor
|
|
KR101767035B1
(ko)
|
2009-10-01 |
2017-08-10 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
|
WO2011043182A1
(en)
|
2009-10-05 |
2011-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for removing electricity and method for manufacturing semiconductor device
|
|
WO2011043163A1
(en)
|
2009-10-05 |
2011-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
KR101623619B1
(ko)
|
2009-10-08 |
2016-05-23 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
산화물 반도체층 및 반도체 장치
|
|
KR102596694B1
(ko)
|
2009-10-08 |
2023-11-01 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
|
WO2011043164A1
(en)
|
2009-10-09 |
2011-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the semiconductor device
|
|
KR101820972B1
(ko)
|
2009-10-09 |
2018-01-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제조 방법
|
|
KR101820973B1
(ko)
|
2009-10-09 |
2018-01-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치 제조 방법
|
|
WO2011043194A1
(en)
|
2009-10-09 |
2011-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
WO2011043175A1
(en)
|
2009-10-09 |
2011-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Logic circuit and display device having the same
|
|
KR20120093864A
(ko)
|
2009-10-09 |
2012-08-23 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
WO2011043206A1
(en)
*
|
2009-10-09 |
2011-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US9171640B2
(en)
|
2009-10-09 |
2015-10-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Shift register and display device
|
|
CN112242173B
(zh)
|
2009-10-09 |
2024-08-20 |
株式会社半导体能源研究所 |
半导体器件
|
|
KR101949670B1
(ko)
|
2009-10-09 |
2019-02-19 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR101832698B1
(ko)
*
|
2009-10-14 |
2018-02-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
|
WO2011046015A1
(en)
|
2009-10-16 |
2011-04-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Logic circuit and semiconductor device
|
|
WO2011046048A1
(en)
|
2009-10-16 |
2011-04-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
CN104485336B
(zh)
|
2009-10-21 |
2018-01-02 |
株式会社半导体能源研究所 |
半导体器件
|
|
KR101402294B1
(ko)
|
2009-10-21 |
2014-06-02 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 제작방법
|
|
CN105070715B
(zh)
*
|
2009-10-21 |
2018-10-19 |
株式会社半导体能源研究所 |
半导体装置
|
|
KR102416955B1
(ko)
|
2009-10-29 |
2022-07-05 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
CN102668096B
(zh)
|
2009-10-30 |
2015-04-29 |
株式会社半导体能源研究所 |
半导体装置及其制造方法
|
|
WO2011052437A1
(en)
*
|
2009-10-30 |
2011-05-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Non-linear element, display device including non-linear element, and electronic device including display device
|
|
KR101740684B1
(ko)
*
|
2009-10-30 |
2017-05-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
파워 다이오드, 정류기 및 그것을 가지는 반도체 장치
|
|
WO2011052382A1
(en)
*
|
2009-10-30 |
2011-05-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
KR101788521B1
(ko)
|
2009-10-30 |
2017-10-19 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR102062077B1
(ko)
|
2009-10-30 |
2020-01-03 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR20120091243A
(ko)
*
|
2009-10-30 |
2012-08-17 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
EP2497115A4
(en)
|
2009-11-06 |
2015-09-02 |
Semiconductor Energy Lab |
SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
|
|
KR101930230B1
(ko)
|
2009-11-06 |
2018-12-18 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치를 제작하기 위한 방법
|
|
WO2011055769A1
(en)
|
2009-11-06 |
2011-05-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor element and semiconductor device, and deposition apparatus
|
|
KR102484475B1
(ko)
|
2009-11-06 |
2023-01-04 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
|
CN102598284B
(zh)
*
|
2009-11-06 |
2015-04-15 |
株式会社半导体能源研究所 |
半导体器件
|
|
WO2011055668A1
(en)
|
2009-11-06 |
2011-05-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR20170076818A
(ko)
*
|
2009-11-13 |
2017-07-04 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
스퍼터링 타겟 및 그 제작 방법 및 트랜지스터
|
|
CN105655351B
(zh)
*
|
2009-11-13 |
2019-11-01 |
株式会社半导体能源研究所 |
显示器件
|
|
KR20120094013A
(ko)
|
2009-11-13 |
2012-08-23 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
스퍼터링 타겟 및 그 제조방법, 및 트랜지스터
|
|
KR102450568B1
(ko)
|
2009-11-13 |
2022-10-07 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
|
KR101975741B1
(ko)
|
2009-11-13 |
2019-05-09 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
타깃 재료의 포장 방법 및 타깃의 장착 방법
|
|
KR20120107079A
(ko)
|
2009-11-20 |
2012-09-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
박막 트랜지스터
|
|
WO2011062041A1
(en)
*
|
2009-11-20 |
2011-05-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor
|
|
WO2011062057A1
(en)
*
|
2009-11-20 |
2011-05-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR101995704B1
(ko)
|
2009-11-20 |
2019-07-03 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치의 제작 방법
|
|
KR102614462B1
(ko)
|
2009-11-27 |
2023-12-14 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제작방법
|
|
CN102640293B
(zh)
|
2009-11-27 |
2015-07-22 |
株式会社半导体能源研究所 |
半导体器件
|
|
CN105206514B
(zh)
|
2009-11-28 |
2018-04-10 |
株式会社半导体能源研究所 |
层叠的氧化物材料、半导体器件、以及用于制造该半导体器件的方法
|
|
WO2011065210A1
(en)
|
2009-11-28 |
2011-06-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
|
|
KR102719739B1
(ko)
|
2009-12-04 |
2024-10-21 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR20120107107A
(ko)
|
2009-12-04 |
2012-09-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
WO2011068033A1
(en)
|
2009-12-04 |
2011-06-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
WO2011068025A1
(en)
*
|
2009-12-04 |
2011-06-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Dc converter circuit and power supply circuit
|
|
WO2011068028A1
(en)
|
2009-12-04 |
2011-06-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor element, semiconductor device, and method for manufacturing the same
|
|
JP2011139052A
(ja)
|
2009-12-04 |
2011-07-14 |
Semiconductor Energy Lab Co Ltd |
半導体記憶装置
|
|
KR102450889B1
(ko)
|
2009-12-04 |
2022-10-06 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
WO2011068037A1
(en)
|
2009-12-04 |
2011-06-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
KR101963300B1
(ko)
|
2009-12-04 |
2019-03-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
|
WO2011070892A1
(en)
|
2009-12-08 |
2011-06-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
KR101470303B1
(ko)
|
2009-12-08 |
2014-12-09 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
IN2012DN04871A
(enExample)
|
2009-12-11 |
2015-09-25 |
Semiconductor Energy Laoboratory Co Ltd |
|
|
WO2011070901A1
(en)
|
2009-12-11 |
2011-06-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
WO2011074409A1
(en)
|
2009-12-18 |
2011-06-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
WO2011074506A1
(en)
|
2009-12-18 |
2011-06-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
WO2011074407A1
(en)
*
|
2009-12-18 |
2011-06-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
KR101481399B1
(ko)
*
|
2009-12-18 |
2015-01-14 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
CN102656801B
(zh)
|
2009-12-25 |
2016-04-27 |
株式会社半导体能源研究所 |
存储器装置、半导体器件和电子装置
|
|
WO2011077978A1
(en)
|
2009-12-25 |
2011-06-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing display device
|
|
KR101434948B1
(ko)
|
2009-12-25 |
2014-08-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
WO2011081041A1
(en)
|
2009-12-28 |
2011-07-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the semiconductor device
|
|
KR101749944B1
(ko)
|
2009-12-28 |
2017-06-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
액정 표시 장치 및 전자 기기
|
|
WO2011081008A1
(en)
|
2009-12-28 |
2011-07-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device and electronic device
|
|
KR101842860B1
(ko)
|
2010-01-20 |
2018-03-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치의 구동 방법
|
|
KR102248998B1
(ko)
|
2010-01-20 |
2021-05-07 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
전자 기기
|
|
KR101883331B1
(ko)
|
2010-01-20 |
2018-08-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치 및 표시 장치의 구동 방법
|
|
KR101978106B1
(ko)
|
2010-01-20 |
2019-05-13 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
WO2011089842A1
(en)
|
2010-01-20 |
2011-07-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Driving method of liquid crystal display device
|
|
WO2011089847A1
(en)
|
2010-01-20 |
2011-07-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Signal processing circuit and method for driving the same
|
|
KR102257147B1
(ko)
*
|
2010-01-20 |
2021-05-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치 및 휴대 전화기
|
|
WO2011090087A1
(en)
|
2010-01-20 |
2011-07-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Display method of display device
|
|
CN102742014B
(zh)
*
|
2010-01-22 |
2015-06-24 |
株式会社半导体能源研究所 |
半导体装置
|
|
WO2011096275A1
(en)
*
|
2010-02-05 |
2011-08-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US8436403B2
(en)
*
|
2010-02-05 |
2013-05-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including transistor provided with sidewall and electronic appliance
|
|
KR101819197B1
(ko)
|
2010-02-05 |
2018-02-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 및 반도체 장치의 제조 방법
|
|
JP2011165778A
(ja)
*
|
2010-02-08 |
2011-08-25 |
Nippon Hoso Kyokai <Nhk> |
ｐ型有機薄膜トランジスタ、ｐ型有機薄膜トランジスタの製造方法、および、塗布溶液
|
|
US8617920B2
(en)
|
2010-02-12 |
2013-12-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
JP5776192B2
(ja)
*
|
2010-02-16 |
2015-09-09 |
株式会社リコー |
電界効果型トランジスタ、表示素子、画像表示装置及びシステム
|
|
JP5740169B2
(ja)
|
2010-02-19 |
2015-06-24 |
株式会社半導体エネルギー研究所 |
トランジスタの作製方法
|
|
CN102763202B
(zh)
|
2010-02-19 |
2016-08-03 |
株式会社半导体能源研究所 |
半导体装置及其制造方法
|
|
CN102763214B
(zh)
|
2010-02-19 |
2015-02-18 |
株式会社半导体能源研究所 |
半导体器件
|
|
US9000438B2
(en)
|
2010-02-26 |
2015-04-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
KR101706292B1
(ko)
|
2010-03-02 |
2017-02-14 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
펄스 신호 출력 회로 및 시프트 레지스터
|
|
WO2011108343A1
(en)
|
2010-03-02 |
2011-09-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Pulse signal output circuit and shift register
|
|
KR101798645B1
(ko)
|
2010-03-02 |
2017-11-16 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
펄스 신호 출력 회로 및 시프트 레지스터
|
|
KR102341927B1
(ko)
*
|
2010-03-05 |
2021-12-23 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
|
WO2011108346A1
(en)
|
2010-03-05 |
2011-09-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of oxide semiconductor film and manufacturing method of transistor
|
|
KR101862539B1
(ko)
|
2010-03-26 |
2018-05-31 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR101977152B1
(ko)
*
|
2010-04-02 |
2019-05-10 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR101391964B1
(ko)
|
2010-04-02 |
2014-05-07 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
JP2011233858A
(ja)
*
|
2010-04-09 |
2011-11-17 |
Dainippon Printing Co Ltd |
薄膜素子用基板の製造方法、薄膜素子の製造方法、薄膜トランジスタの製造方法、薄膜素子、および薄膜トランジスタ
|
|
US8653514B2
(en)
|
2010-04-09 |
2014-02-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
CN102835028B
(zh)
|
2010-04-09 |
2015-09-09 |
株式会社半导体能源研究所 |
分压器电路
|
|
KR101881729B1
(ko)
|
2010-04-16 |
2018-07-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
성막 방법 및 반도체 장치를 제작하기 위한 방법
|
|
US8692243B2
(en)
|
2010-04-20 |
2014-04-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
JP2011248347A
(ja)
|
2010-04-28 |
2011-12-08 |
Semiconductor Energy Lab Co Ltd |
フォトマスク
|
|
US8664658B2
(en)
|
2010-05-14 |
2014-03-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR101808198B1
(ko)
|
2010-05-21 |
2017-12-12 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치의 제작 방법
|
|
US8629438B2
(en)
|
2010-05-21 |
2014-01-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
JP5775357B2
(ja)
*
|
2010-05-21 |
2015-09-09 |
株式会社半導体エネルギー研究所 |
液晶表示装置
|
|
WO2011145484A1
(en)
|
2010-05-21 |
2011-11-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
WO2011155295A1
(en)
|
2010-06-10 |
2011-12-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Dc/dc converter, power supply circuit, and semiconductor device
|
|
US8552425B2
(en)
|
2010-06-18 |
2013-10-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR101822526B1
(ko)
|
2010-06-30 |
2018-01-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치와 그 제작 방법
|
|
US8441010B2
(en)
|
2010-07-01 |
2013-05-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR101350751B1
(ko)
|
2010-07-01 |
2014-01-10 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
액정 표시 장치의 구동 방법
|
|
US8766252B2
(en)
|
2010-07-02 |
2014-07-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device comprising an oxide semiconductor
|
|
US8642380B2
(en)
|
2010-07-02 |
2014-02-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
|
US8785241B2
(en)
|
2010-07-16 |
2014-07-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
DE112011102644B4
(de)
*
|
2010-08-06 |
2019-12-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Integrierte Halbleiterschaltung
|
|
JP5948025B2
(ja)
|
2010-08-06 |
2016-07-06 |
株式会社半導体エネルギー研究所 |
液晶表示装置
|
|
TWI587405B
(zh)
|
2010-08-16 |
2017-06-11 |
半導體能源研究所股份有限公司 |
半導體裝置之製造方法
|
|
TWI508294B
(zh)
|
2010-08-19 |
2015-11-11 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
US8883555B2
(en)
|
2010-08-25 |
2014-11-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Electronic device, manufacturing method of electronic device, and sputtering target
|
|
US8685787B2
(en)
|
2010-08-25 |
2014-04-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
|
JP5864163B2
(ja)
|
2010-08-27 |
2016-02-17 |
株式会社半導体エネルギー研究所 |
半導体装置の設計方法
|
|
US8575610B2
(en)
|
2010-09-02 |
2013-11-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for driving the same
|
|
WO2012029612A1
(en)
|
2010-09-03 |
2012-03-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Sputtering target and method for manufacturing semiconductor device
|
|
US8728860B2
(en)
|
2010-09-03 |
2014-05-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
WO2012029638A1
(en)
|
2010-09-03 |
2012-03-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR20120026970A
(ko)
|
2010-09-10 |
2012-03-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 발광 장치
|
|
US8766253B2
(en)
|
2010-09-10 |
2014-07-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP2012256821A
(ja)
|
2010-09-13 |
2012-12-27 |
Semiconductor Energy Lab Co Ltd |
記憶装置
|
|
US9546416B2
(en)
|
2010-09-13 |
2017-01-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of forming crystalline oxide semiconductor film
|
|
US8592879B2
(en)
|
2010-09-13 |
2013-11-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
KR101932576B1
(ko)
|
2010-09-13 |
2018-12-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
|
US8664097B2
(en)
|
2010-09-13 |
2014-03-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
|
US8558960B2
(en)
|
2010-09-13 |
2013-10-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device and method for manufacturing the same
|
|
US8871565B2
(en)
|
2010-09-13 |
2014-10-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
US8835917B2
(en)
|
2010-09-13 |
2014-09-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, power diode, and rectifier
|
|
TWI539453B
(zh)
|
2010-09-14 |
2016-06-21 |
半導體能源研究所股份有限公司 |
記憶體裝置和半導體裝置
|
|
TWI574259B
(zh)
|
2010-09-29 |
2017-03-11 |
半導體能源研究所股份有限公司 |
半導體記憶體裝置和其驅動方法
|
|
TWI565063B
(zh)
|
2010-10-01 |
2017-01-01 |
應用材料股份有限公司 |
用在薄膜電晶體應用中的砷化鎵類的材料
|
|
TWI539456B
(zh)
|
2010-10-05 |
2016-06-21 |
半導體能源研究所股份有限公司 |
半導體記憶體裝置及其驅動方法
|
|
US8803143B2
(en)
|
2010-10-20 |
2014-08-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Thin film transistor including buffer layers with high resistivity
|
|
US8916866B2
(en)
|
2010-11-03 |
2014-12-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
TWI555205B
(zh)
|
2010-11-05 |
2016-10-21 |
半導體能源研究所股份有限公司 |
半導體裝置及半導體裝置的製造方法
|
|
US8569754B2
(en)
*
|
2010-11-05 |
2013-10-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
TWI654764B
(zh)
|
2010-11-11 |
2019-03-21 |
Semiconductor Energy Laboratory Co., Ltd. |
半導體裝置及其製造方法
|
|
US8936965B2
(en)
|
2010-11-26 |
2015-01-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US8629496B2
(en)
|
2010-11-30 |
2014-01-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
US8823092B2
(en)
|
2010-11-30 |
2014-09-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
TWI562379B
(en)
|
2010-11-30 |
2016-12-11 |
Semiconductor Energy Lab Co Ltd |
Semiconductor device and method for manufacturing semiconductor device
|
|
US8809852B2
(en)
|
2010-11-30 |
2014-08-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same
|
|
US8816425B2
(en)
|
2010-11-30 |
2014-08-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
KR101995082B1
(ko)
|
2010-12-03 |
2019-07-02 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
산화물 반도체막 및 반도체 장치
|
|
US9202822B2
(en)
*
|
2010-12-17 |
2015-12-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US8894825B2
(en)
|
2010-12-17 |
2014-11-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Sputtering target, method for manufacturing the same, manufacturing semiconductor device
|
|
KR102181898B1
(ko)
|
2010-12-17 |
2020-11-23 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
산화물 재료 및 반도체 장치
|
|
US9443984B2
(en)
|
2010-12-28 |
2016-09-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
WO2012090799A1
(en)
|
2010-12-28 |
2012-07-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
JP5731369B2
(ja)
|
2010-12-28 |
2015-06-10 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
JP5975635B2
(ja)
|
2010-12-28 |
2016-08-23 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US8883556B2
(en)
|
2010-12-28 |
2014-11-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US8941112B2
(en)
|
2010-12-28 |
2015-01-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
TWI621121B
(zh)
|
2011-01-05 |
2018-04-11 |
Semiconductor Energy Laboratory Co., Ltd. |
儲存元件、儲存裝置、及信號處理電路
|
|
TWI535032B
(zh)
|
2011-01-12 |
2016-05-21 |
半導體能源研究所股份有限公司 |
半導體裝置的製造方法
|
|
US20120178224A1
(en)
|
2011-01-12 |
2012-07-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
JP5982125B2
(ja)
|
2011-01-12 |
2016-08-31 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
TWI570809B
(zh)
|
2011-01-12 |
2017-02-11 |
半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
KR102026718B1
(ko)
|
2011-01-14 |
2019-09-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
기억장치, 반도체 장치, 검출 방법
|
|
TWI619230B
(zh)
|
2011-01-14 |
2018-03-21 |
半導體能源研究所股份有限公司 |
半導體記憶裝置
|
|
JP5859839B2
(ja)
|
2011-01-14 |
2016-02-16 |
株式会社半導体エネルギー研究所 |
記憶素子の駆動方法、及び、記憶素子
|
|
JP5897910B2
(ja)
|
2011-01-20 |
2016-04-06 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
JP2011086962A
(ja)
*
|
2011-01-26 |
2011-04-28 |
Semiconductor Energy Lab Co Ltd |
半導体装置の作製方法
|
|
TWI570920B
(zh)
|
2011-01-26 |
2017-02-11 |
半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
TWI787452B
(zh)
|
2011-01-26 |
2022-12-21 |
日商半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
TWI564890B
(zh)
|
2011-01-26 |
2017-01-01 |
半導體能源研究所股份有限公司 |
記憶體裝置及半導體裝置
|
|
TWI525619B
(zh)
|
2011-01-27 |
2016-03-11 |
半導體能源研究所股份有限公司 |
記憶體電路
|
|
TWI520273B
(zh)
|
2011-02-02 |
2016-02-01 |
半導體能源研究所股份有限公司 |
半導體儲存裝置
|
|
US8780614B2
(en)
|
2011-02-02 |
2014-07-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device
|
|
US9799773B2
(en)
|
2011-02-02 |
2017-10-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor and semiconductor device
|
|
US8643007B2
(en)
|
2011-02-23 |
2014-02-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US8841664B2
(en)
|
2011-03-04 |
2014-09-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US9646829B2
(en)
|
2011-03-04 |
2017-05-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
|
US9023684B2
(en)
|
2011-03-04 |
2015-05-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
JP5827145B2
(ja)
|
2011-03-08 |
2015-12-02 |
株式会社半導体エネルギー研究所 |
信号処理回路
|
|
US8541781B2
(en)
|
2011-03-10 |
2013-09-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
JP2012209543A
(ja)
|
2011-03-11 |
2012-10-25 |
Semiconductor Energy Lab Co Ltd |
半導体装置
|
|
KR101995682B1
(ko)
|
2011-03-18 |
2019-07-02 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
산화물 반도체막, 반도체 장치, 및 반도체 장치의 제작 방법
|
|
JP2012204548A
(ja)
*
|
2011-03-24 |
2012-10-22 |
Sony Corp |
表示装置およびその製造方法
|
|
TWI545652B
(zh)
|
2011-03-25 |
2016-08-11 |
半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
US9012904B2
(en)
|
2011-03-25 |
2015-04-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
US9219159B2
(en)
|
2011-03-25 |
2015-12-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for forming oxide semiconductor film and method for manufacturing semiconductor device
|
|
US8956944B2
(en)
|
2011-03-25 |
2015-02-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
JP6053098B2
(ja)
|
2011-03-28 |
2016-12-27 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US8927329B2
(en)
|
2011-03-30 |
2015-01-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing oxide semiconductor device with improved electronic properties
|
|
TWI567735B
(zh)
|
2011-03-31 |
2017-01-21 |
半導體能源研究所股份有限公司 |
記憶體電路，記憶體單元，及訊號處理電路
|
|
US9082860B2
(en)
|
2011-03-31 |
2015-07-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US9142320B2
(en)
|
2011-04-08 |
2015-09-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory element and signal processing circuit
|
|
US9093538B2
(en)
|
2011-04-08 |
2015-07-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
US9012905B2
(en)
|
2011-04-08 |
2015-04-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same
|
|
US8878174B2
(en)
|
2011-04-15 |
2014-11-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor element, memory circuit, integrated circuit, and driving method of the integrated circuit
|
|
JP5946683B2
(ja)
|
2011-04-22 |
2016-07-06 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9331206B2
(en)
|
2011-04-22 |
2016-05-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide material and semiconductor device
|
|
US9117701B2
(en)
|
2011-05-06 |
2015-08-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US8946066B2
(en)
|
2011-05-11 |
2015-02-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing semiconductor device
|
|
WO2012157472A1
(en)
|
2011-05-13 |
2012-11-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
WO2012157463A1
(en)
|
2011-05-13 |
2012-11-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US8564331B2
(en)
|
2011-05-13 |
2013-10-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP5886128B2
(ja)
|
2011-05-13 |
2016-03-16 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP6109489B2
(ja)
|
2011-05-13 |
2017-04-05 |
株式会社半導体エネルギー研究所 |
Ｅｌ表示装置
|
|
KR101889383B1
(ko)
|
2011-05-16 |
2018-08-17 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
프로그래머블 로직 디바이스
|
|
US8581625B2
(en)
|
2011-05-19 |
2013-11-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Programmable logic device
|
|
KR102081792B1
(ko)
|
2011-05-19 |
2020-02-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
연산회로 및 연산회로의 구동방법
|
|
JP5886496B2
(ja)
|
2011-05-20 |
2016-03-16 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
TWI616873B
(zh)
*
|
2011-05-20 |
2018-03-01 |
半導體能源研究所股份有限公司 |
儲存裝置及信號處理電路
|
|
JP6082189B2
(ja)
|
2011-05-20 |
2017-02-15 |
株式会社半導体エネルギー研究所 |
記憶装置及び信号処理回路
|
|
JP5936908B2
(ja)
|
2011-05-20 |
2016-06-22 |
株式会社半導体エネルギー研究所 |
パリティビット出力回路およびパリティチェック回路
|
|
JP5892852B2
(ja)
|
2011-05-20 |
2016-03-23 |
株式会社半導体エネルギー研究所 |
プログラマブルロジックデバイス
|
|
US20120298998A1
(en)
|
2011-05-25 |
2012-11-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
|
|
JP5731904B2
(ja)
|
2011-05-25 |
2015-06-10 |
ルネサスエレクトロニクス株式会社 |
半導体装置及び半導体装置の製造方法
|
|
US8669781B2
(en)
|
2011-05-31 |
2014-03-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR101933741B1
(ko)
|
2011-06-09 |
2018-12-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
캐시 메모리 및 캐시 메모리의 구동 방법
|
|
JP6104522B2
(ja)
|
2011-06-10 |
2017-03-29 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP6009226B2
(ja)
*
|
2011-06-10 |
2016-10-19 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
KR20130007426A
(ko)
|
2011-06-17 |
2013-01-18 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
|
SG10201505586UA
(en)
|
2011-06-17 |
2015-08-28 |
Semiconductor Energy Lab |
Semiconductor device and method for manufacturing the same
|
|
US8901554B2
(en)
|
2011-06-17 |
2014-12-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including channel formation region including oxide semiconductor
|
|
US9166055B2
(en)
|
2011-06-17 |
2015-10-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
US9130044B2
(en)
|
2011-07-01 |
2015-09-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US8952377B2
(en)
|
2011-07-08 |
2015-02-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US9214474B2
(en)
|
2011-07-08 |
2015-12-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing semiconductor device
|
|
US9318506B2
(en)
|
2011-07-08 |
2016-04-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US8847220B2
(en)
|
2011-07-15 |
2014-09-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP2013042117A
(ja)
|
2011-07-15 |
2013-02-28 |
Semiconductor Energy Lab Co Ltd |
半導体装置
|
|
US8643008B2
(en)
|
2011-07-22 |
2014-02-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US8718224B2
(en)
|
2011-08-05 |
2014-05-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Pulse signal output circuit and shift register
|
|
JP6006572B2
(ja)
|
2011-08-18 |
2016-10-12 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9660092B2
(en)
|
2011-08-31 |
2017-05-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor thin film transistor including oxygen release layer
|
|
JP5975466B2
(ja)
*
|
2011-09-08 |
2016-08-23 |
株式会社タムラ製作所 |
Ｇａ２Ｏ３系半導体素子
|
|
US9082663B2
(en)
|
2011-09-16 |
2015-07-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
WO2013039126A1
(en)
|
2011-09-16 |
2013-03-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
WO2013042562A1
(en)
|
2011-09-22 |
2013-03-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US8841675B2
(en)
|
2011-09-23 |
2014-09-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Minute transistor
|
|
US9431545B2
(en)
|
2011-09-23 |
2016-08-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
WO2013042696A1
(en)
*
|
2011-09-23 |
2013-03-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP2013084333A
(ja)
|
2011-09-28 |
2013-05-09 |
Semiconductor Energy Lab Co Ltd |
シフトレジスタ回路
|
|
KR102304125B1
(ko)
|
2011-09-29 |
2021-09-17 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
TWI613822B
(zh)
|
2011-09-29 |
2018-02-01 |
半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
US20130087784A1
(en)
|
2011-10-05 |
2013-04-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
JP6022880B2
(ja)
|
2011-10-07 |
2016-11-09 |
株式会社半導体エネルギー研究所 |
半導体装置及び半導体装置の作製方法
|
|
JP2013093565A
(ja)
|
2011-10-07 |
2013-05-16 |
Semiconductor Energy Lab Co Ltd |
半導体装置
|
|
JP6026839B2
(ja)
|
2011-10-13 |
2016-11-16 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9117916B2
(en)
|
2011-10-13 |
2015-08-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device comprising oxide semiconductor film
|
|
JP5912394B2
(ja)
|
2011-10-13 |
2016-04-27 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9018629B2
(en)
|
2011-10-13 |
2015-04-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing semiconductor device
|
|
US8637864B2
(en)
|
2011-10-13 |
2014-01-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method of manufacturing the same
|
|
SG11201504615UA
(en)
|
2011-10-14 |
2015-07-30 |
Semiconductor Energy Lab |
Semiconductor device
|
|
KR20130040706A
(ko)
|
2011-10-14 |
2013-04-24 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제작 방법
|
|
WO2013061895A1
(en)
|
2011-10-28 |
2013-05-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
KR102012981B1
(ko)
|
2011-11-09 |
2019-08-21 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
US8796682B2
(en)
|
2011-11-11 |
2014-08-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing a semiconductor device
|
|
JP6122275B2
(ja)
|
2011-11-11 |
2017-04-26 |
株式会社半導体エネルギー研究所 |
表示装置
|
|
US8878177B2
(en)
|
2011-11-11 |
2014-11-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing semiconductor device
|
|
JP6076038B2
(ja)
|
2011-11-11 |
2017-02-08 |
株式会社半導体エネルギー研究所 |
表示装置の作製方法
|
|
US8951899B2
(en)
|
2011-11-25 |
2015-02-10 |
Semiconductor Energy Laboratory |
Method for manufacturing semiconductor device
|
|
JP6125211B2
(ja)
|
2011-11-25 |
2017-05-10 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
JP5881388B2
(ja)
*
|
2011-11-28 |
2016-03-09 |
株式会社半導体エネルギー研究所 |
半導体装置及び半導体装置の作製方法
|
|
US9057126B2
(en)
|
2011-11-29 |
2015-06-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing sputtering target and method for manufacturing semiconductor device
|
|
US9076871B2
(en)
|
2011-11-30 |
2015-07-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
TWI639150B
(zh)
|
2011-11-30 |
2018-10-21 |
Semiconductor Energy Laboratory Co., Ltd. |
半導體顯示裝置
|
|
US20130137232A1
(en)
|
2011-11-30 |
2013-05-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for forming oxide semiconductor film and method for manufacturing semiconductor device
|
|
JP6147992B2
(ja)
*
|
2011-11-30 |
2017-06-14 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP2013137853A
(ja)
|
2011-12-02 |
2013-07-11 |
Semiconductor Energy Lab Co Ltd |
記憶装置および記憶装置の駆動方法
|
|
US9076505B2
(en)
|
2011-12-09 |
2015-07-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device
|
|
US10002968B2
(en)
|
2011-12-14 |
2018-06-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and display device including the same
|
|
WO2013089115A1
(en)
|
2011-12-15 |
2013-06-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
US8785258B2
(en)
|
2011-12-20 |
2014-07-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
JP6053490B2
(ja)
|
2011-12-23 |
2016-12-27 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
TWI584383B
(zh)
|
2011-12-27 |
2017-05-21 |
半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
KR102100425B1
(ko)
|
2011-12-27 |
2020-04-13 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제작 방법
|
|
US9099560B2
(en)
|
2012-01-20 |
2015-08-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
KR102412138B1
(ko)
|
2012-01-25 |
2022-06-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제작 방법
|
|
TWI581431B
(zh)
|
2012-01-26 |
2017-05-01 |
半導體能源研究所股份有限公司 |
半導體裝置及半導體裝置的製造方法
|
|
US9419146B2
(en)
|
2012-01-26 |
2016-08-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
US8956912B2
(en)
|
2012-01-26 |
2015-02-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
US9006733B2
(en)
*
|
2012-01-26 |
2015-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing thereof
|
|
US8916424B2
(en)
|
2012-02-07 |
2014-12-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
US9859114B2
(en)
|
2012-02-08 |
2018-01-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor device with an oxygen-controlling insulating layer
|
|
US9112037B2
(en)
|
2012-02-09 |
2015-08-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US20130207111A1
(en)
|
2012-02-09 |
2013-08-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, display device including semiconductor device, electronic device including semiconductor device, and method for manufacturing semiconductor device
|
|
JP6108858B2
(ja)
|
2012-02-17 |
2017-04-05 |
株式会社半導体エネルギー研究所 |
ｐ型半導体材料および半導体装置
|
|
US9553200B2
(en)
*
|
2012-02-29 |
2017-01-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
JP2013183001A
(ja)
|
2012-03-01 |
2013-09-12 |
Semiconductor Energy Lab Co Ltd |
半導体装置
|
|
JP6041707B2
(ja)
|
2012-03-05 |
2016-12-14 |
株式会社半導体エネルギー研究所 |
ラッチ回路および半導体装置
|
|
KR20140136975A
(ko)
|
2012-03-13 |
2014-12-01 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
발광 장치 및 그 구동 방법
|
|
US9058892B2
(en)
|
2012-03-14 |
2015-06-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and shift register
|
|
JP6168795B2
(ja)
|
2012-03-14 |
2017-07-26 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
US9349849B2
(en)
|
2012-03-28 |
2016-05-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device including the semiconductor device
|
|
US8941113B2
(en)
|
2012-03-30 |
2015-01-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor element, semiconductor device, and manufacturing method of semiconductor element
|
|
US8901556B2
(en)
|
2012-04-06 |
2014-12-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Insulating film, method for manufacturing semiconductor device, and semiconductor device
|
|
JP6059566B2
(ja)
|
2012-04-13 |
2017-01-11 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
JP6128906B2
(ja)
|
2012-04-13 |
2017-05-17 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP6505769B2
(ja)
*
|
2012-04-13 |
2019-04-24 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
KR20230004930A
(ko)
|
2012-04-13 |
2023-01-06 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
JP6143423B2
(ja)
|
2012-04-16 |
2017-06-07 |
株式会社半導体エネルギー研究所 |
半導体装置の製造方法
|
|
US9219164B2
(en)
|
2012-04-20 |
2015-12-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device with oxide semiconductor channel
|
|
US8860022B2
(en)
|
2012-04-27 |
2014-10-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor film and semiconductor device
|
|
US9048323B2
(en)
|
2012-04-30 |
2015-06-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
DE112013002407B4
(de)
*
|
2012-05-10 |
2024-05-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Halbleitervorrichtung
|
|
KR102222438B1
(ko)
|
2012-05-10 |
2021-03-04 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 표시 장치
|
|
KR102082793B1
(ko)
|
2012-05-10 |
2020-02-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치 및 그 제작 방법
|
|
JP6174899B2
(ja)
|
2012-05-11 |
2017-08-02 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
KR102087443B1
(ko)
|
2012-05-11 |
2020-03-10 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 구동 방법
|
|
US8995607B2
(en)
|
2012-05-31 |
2015-03-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Pulse signal output circuit and shift register
|
|
WO2013179922A1
(en)
|
2012-05-31 |
2013-12-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
WO2013180040A1
(en)
|
2012-05-31 |
2013-12-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP6076626B2
(ja)
|
2012-06-14 |
2017-02-08 |
株式会社ジャパンディスプレイ |
表示装置及びその製造方法
|
|
JP2014027263A
(ja)
|
2012-06-15 |
2014-02-06 |
Semiconductor Energy Lab Co Ltd |
半導体装置およびその作製方法
|
|
US9059219B2
(en)
|
2012-06-27 |
2015-06-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing semiconductor device
|
|
KR102161077B1
(ko)
|
2012-06-29 |
2020-09-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
US10134852B2
(en)
|
2012-06-29 |
2018-11-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US8873308B2
(en)
|
2012-06-29 |
2014-10-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Signal processing circuit
|
|
WO2014003086A1
(en)
|
2012-06-29 |
2014-01-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR102099262B1
(ko)
|
2012-07-11 |
2020-04-09 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
액정 표시 장치, 및 액정 표시 장치의 구동 방법
|
|
JP6006558B2
(ja)
|
2012-07-17 |
2016-10-12 |
株式会社半導体エネルギー研究所 |
半導体装置及びその製造方法
|
|
JP2014042004A
(ja)
|
2012-07-26 |
2014-03-06 |
Semiconductor Energy Lab Co Ltd |
半導体装置及びその作製方法
|
|
JP6224931B2
(ja)
|
2012-07-27 |
2017-11-01 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP6134598B2
(ja)
|
2012-08-02 |
2017-05-24 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
CN108054175A
(zh)
|
2012-08-03 |
2018-05-18 |
株式会社半导体能源研究所 |
半导体装置
|
|
SG10201700805WA
(en)
|
2012-08-03 |
2017-02-27 |
Semiconductor Energy Lab Co Ltd |
Oxide semiconductor stacked film and semiconductor device
|
|
JP2014057296A
(ja)
|
2012-08-10 |
2014-03-27 |
Semiconductor Energy Lab Co Ltd |
半導体装置の駆動方法
|
|
US9929276B2
(en)
|
2012-08-10 |
2018-03-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
JP2014057298A
(ja)
|
2012-08-10 |
2014-03-27 |
Semiconductor Energy Lab Co Ltd |
半導体装置の駆動方法
|
|
JP2014199899A
(ja)
|
2012-08-10 |
2014-10-23 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
TWI581404B
(zh)
|
2012-08-10 |
2017-05-01 |
半導體能源研究所股份有限公司 |
半導體裝置以及該半導體裝置的驅動方法
|
|
JP6220597B2
(ja)
|
2012-08-10 |
2017-10-25 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
KR102171650B1
(ko)
|
2012-08-10 |
2020-10-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
|
US9245958B2
(en)
|
2012-08-10 |
2016-01-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
US8937307B2
(en)
|
2012-08-10 |
2015-01-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
CN104584229B
(zh)
|
2012-08-10 |
2018-05-15 |
株式会社半导体能源研究所 |
半导体装置及其制造方法
|
|
WO2014024808A1
(en)
|
2012-08-10 |
2014-02-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
KR20140026257A
(ko)
|
2012-08-23 |
2014-03-05 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
|
DE102013216824B4
(de)
|
2012-08-28 |
2024-10-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Halbleitervorrichtung
|
|
TWI575663B
(zh)
|
2012-08-31 |
2017-03-21 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
US8981372B2
(en)
|
2012-09-13 |
2015-03-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and electronic appliance
|
|
KR102738883B1
(ko)
|
2012-09-13 |
2024-12-06 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
|
US9018624B2
(en)
|
2012-09-13 |
2015-04-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and electronic appliance
|
|
JP6351947B2
(ja)
|
2012-10-12 |
2018-07-04 |
株式会社半導体エネルギー研究所 |
液晶表示装置の作製方法
|
|
KR102226090B1
(ko)
|
2012-10-12 |
2021-03-09 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치의 제작 방법 및 반도체 장치의 제조 장치
|
|
TWI681233B
(zh)
|
2012-10-12 |
2020-01-01 |
日商半導體能源研究所股份有限公司 |
液晶顯示裝置、觸控面板及液晶顯示裝置的製造方法
|
|
JP6021586B2
(ja)
|
2012-10-17 |
2016-11-09 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
KR102227591B1
(ko)
|
2012-10-17 |
2021-03-15 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
JP2014082388A
(ja)
*
|
2012-10-17 |
2014-05-08 |
Semiconductor Energy Lab Co Ltd |
半導体装置
|
|
JP5951442B2
(ja)
|
2012-10-17 |
2016-07-13 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
KR102220279B1
(ko)
|
2012-10-19 |
2021-02-24 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
|
|
WO2014065343A1
(en)
|
2012-10-24 |
2014-05-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR102279459B1
(ko)
|
2012-10-24 |
2021-07-19 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
|
US9287411B2
(en)
|
2012-10-24 |
2016-03-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
KR102130184B1
(ko)
|
2012-10-24 |
2020-07-03 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
TWI782259B
(zh)
|
2012-10-24 |
2022-11-01 |
日商半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
JP6219562B2
(ja)
*
|
2012-10-30 |
2017-10-25 |
株式会社半導体エネルギー研究所 |
表示装置及び電子機器
|
|
JP6317059B2
(ja)
|
2012-11-16 |
2018-04-25 |
株式会社半導体エネルギー研究所 |
半導体装置及び表示装置
|
|
TWI613813B
(zh)
|
2012-11-16 |
2018-02-01 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
KR102148549B1
(ko)
|
2012-11-28 |
2020-08-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
|
US9412764B2
(en)
|
2012-11-28 |
2016-08-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, display device, and electronic device
|
|
TWI582993B
(zh)
|
2012-11-30 |
2017-05-11 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
US9594281B2
(en)
|
2012-11-30 |
2017-03-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device
|
|
JP6320009B2
(ja)
|
2012-12-03 |
2018-05-09 |
株式会社半導体エネルギー研究所 |
半導体装置及びその作製方法
|
|
KR102207028B1
(ko)
|
2012-12-03 |
2021-01-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR102209871B1
(ko)
|
2012-12-25 |
2021-02-01 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
US9905585B2
(en)
|
2012-12-25 |
2018-02-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device comprising capacitor
|
|
KR102241249B1
(ko)
|
2012-12-25 |
2021-04-15 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
저항 소자, 표시 장치, 및 전자기기
|
|
WO2014104265A1
(en)
|
2012-12-28 |
2014-07-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
TWI607510B
(zh)
|
2012-12-28 |
2017-12-01 |
半導體能源研究所股份有限公司 |
半導體裝置及半導體裝置的製造方法
|
|
JP6329762B2
(ja)
|
2012-12-28 |
2018-05-23 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9391096B2
(en)
|
2013-01-18 |
2016-07-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
TWI614813B
(zh)
|
2013-01-21 |
2018-02-11 |
半導體能源研究所股份有限公司 |
半導體裝置的製造方法
|
|
US8981374B2
(en)
|
2013-01-30 |
2015-03-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
TWI618252B
(zh)
|
2013-02-12 |
2018-03-11 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
KR102153110B1
(ko)
|
2013-03-06 |
2020-09-07 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체막 및 반도체 장치
|
|
US9269315B2
(en)
|
2013-03-08 |
2016-02-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Driving method of semiconductor device
|
|
JP6355374B2
(ja)
|
2013-03-22 |
2018-07-11 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
US10347769B2
(en)
|
2013-03-25 |
2019-07-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Thin film transistor with multi-layer source/drain electrodes
|
|
JP6376788B2
(ja)
|
2013-03-26 |
2018-08-22 |
株式会社半導体エネルギー研究所 |
半導体装置およびその作製方法
|
|
US9608122B2
(en)
|
2013-03-27 |
2017-03-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
US10566455B2
(en)
*
|
2013-03-28 |
2020-02-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
JP6224338B2
(ja)
|
2013-04-11 |
2017-11-01 |
株式会社半導体エネルギー研究所 |
半導体装置、表示装置及び半導体装置の作製方法
|
|
JP6198434B2
(ja)
|
2013-04-11 |
2017-09-20 |
株式会社半導体エネルギー研究所 |
表示装置及び電子機器
|
|
US10304859B2
(en)
|
2013-04-12 |
2019-05-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device having an oxide film on an oxide semiconductor film
|
|
US9915848B2
(en)
|
2013-04-19 |
2018-03-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and electronic device
|
|
US9893192B2
(en)
|
2013-04-24 |
2018-02-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP6401483B2
(ja)
|
2013-04-26 |
2018-10-10 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
TWI631711B
(zh)
*
|
2013-05-01 |
2018-08-01 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
US9231002B2
(en)
|
2013-05-03 |
2016-01-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and electronic device
|
|
US9704894B2
(en)
|
2013-05-10 |
2017-07-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device including pixel electrode including oxide
|
|
US10032872B2
(en)
|
2013-05-17 |
2018-07-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, method for manufacturing the same, and apparatus for manufacturing semiconductor device
|
|
US9343579B2
(en)
|
2013-05-20 |
2016-05-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
CN109860278A
(zh)
|
2013-05-20 |
2019-06-07 |
株式会社半导体能源研究所 |
半导体装置
|
|
TWI664731B
(zh)
|
2013-05-20 |
2019-07-01 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
US9647125B2
(en)
|
2013-05-20 |
2017-05-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
TWI649606B
(zh)
|
2013-06-05 |
2019-02-01 |
日商半導體能源研究所股份有限公司 |
顯示裝置及電子裝置
|
|
JP6475424B2
(ja)
|
2013-06-05 |
2019-02-27 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP6374221B2
(ja)
|
2013-06-05 |
2018-08-15 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9773915B2
(en)
|
2013-06-11 |
2017-09-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US9293480B2
(en)
|
2013-07-10 |
2016-03-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and display device including the semiconductor device
|
|
US9006736B2
(en)
|
2013-07-12 |
2015-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP6329843B2
(ja)
|
2013-08-19 |
2018-05-23 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
KR102232133B1
(ko)
|
2013-08-22 |
2021-03-24 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
US9443987B2
(en)
|
2013-08-23 |
2016-09-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US10008513B2
(en)
|
2013-09-05 |
2018-06-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US9425217B2
(en)
|
2013-09-23 |
2016-08-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP6386323B2
(ja)
|
2013-10-04 |
2018-09-05 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
TWI688102B
(zh)
|
2013-10-10 |
2020-03-11 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
|
US9245593B2
(en)
|
2013-10-16 |
2016-01-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for driving arithmetic processing unit
|
|
DE102014220672A1
(de)
|
2013-10-22 |
2015-05-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Halbleitervorrichtung
|
|
WO2015060133A1
(en)
|
2013-10-22 |
2015-04-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP2015179247A
(ja)
*
|
2013-10-22 |
2015-10-08 |
株式会社半導体エネルギー研究所 |
表示装置
|
|
US9583516B2
(en)
|
2013-10-25 |
2017-02-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
|
US10437107B2
(en)
|
2013-10-30 |
2019-10-08 |
Dic Corporation |
Liquid-crystal display element
|
|
JP5930133B2
(ja)
|
2013-10-30 |
2016-06-08 |
Dic株式会社 |
液晶表示素子
|
|
JP6440457B2
(ja)
|
2013-11-07 |
2018-12-19 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP5850286B2
(ja)
|
2013-11-12 |
2016-02-03 |
Dic株式会社 |
液晶表示素子
|
|
KR101717466B1
(ko)
|
2013-11-12 |
2017-03-17 |
디아이씨 가부시끼가이샤 |
액정 표시 소자
|
|
JP2016001712A
(ja)
|
2013-11-29 |
2016-01-07 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
KR102220450B1
(ko)
|
2013-12-02 |
2021-02-25 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
|
US9601634B2
(en)
|
2013-12-02 |
2017-03-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US9806098B2
(en)
|
2013-12-10 |
2017-10-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Light-emitting device
|
|
US9349751B2
(en)
|
2013-12-12 |
2016-05-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP2014060451A
(ja)
*
|
2013-12-18 |
2014-04-03 |
Semiconductor Energy Lab Co Ltd |
発光装置
|
|
TWI642186B
(zh)
|
2013-12-18 |
2018-11-21 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
|
US9379192B2
(en)
|
2013-12-20 |
2016-06-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP6444714B2
(ja)
|
2013-12-20 |
2018-12-26 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
JP6306343B2
(ja)
*
|
2013-12-25 |
2018-04-04 |
株式会社半導体エネルギー研究所 |
ソースフォロワ
|
|
KR102283814B1
(ko)
|
2013-12-25 |
2021-07-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR20160102295A
(ko)
|
2013-12-26 |
2016-08-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR102529174B1
(ko)
|
2013-12-27 |
2023-05-08 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR102306200B1
(ko)
|
2014-01-24 |
2021-09-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
WO2015114476A1
(en)
|
2014-01-28 |
2015-08-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR102325158B1
(ko)
|
2014-01-30 |
2021-11-10 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 전자 기기, 및 반도체 장치의 제작 방법
|
|
US9929279B2
(en)
|
2014-02-05 |
2018-03-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
CN111524967B
(zh)
|
2014-02-21 |
2024-07-12 |
株式会社半导体能源研究所 |
半导体膜、晶体管、半导体装置、显示装置以及电子设备
|
|
US10096489B2
(en)
|
2014-03-06 |
2018-10-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
JP6607681B2
(ja)
|
2014-03-07 |
2019-11-20 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9443872B2
(en)
|
2014-03-07 |
2016-09-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR102450562B1
(ko)
|
2014-03-13 |
2022-10-07 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
촬상 장치
|
|
US9917110B2
(en)
|
2014-03-14 |
2018-03-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US10361290B2
(en)
|
2014-03-14 |
2019-07-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device comprising adding oxygen to buffer film and insulating film
|
|
SG11201606647PA
(en)
|
2014-03-14 |
2016-09-29 |
Semiconductor Energy Lab Co Ltd |
Circuit system
|
|
SG11201606536XA
(en)
|
2014-03-18 |
2016-09-29 |
Semiconductor Energy Lab Co Ltd |
Semiconductor device and manufacturing method thereof
|
|
WO2015145292A1
(en)
|
2014-03-28 |
2015-10-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor and semiconductor device
|
|
JP6541398B2
(ja)
|
2014-04-11 |
2019-07-10 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
WO2015159179A1
(en)
|
2014-04-18 |
2015-10-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device
|
|
KR102380829B1
(ko)
|
2014-04-23 |
2022-03-31 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
촬상 장치
|
|
JP6486712B2
(ja)
|
2014-04-30 |
2019-03-20 |
株式会社半導体エネルギー研究所 |
酸化物半導体膜
|
|
US10043913B2
(en)
|
2014-04-30 |
2018-08-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor film, semiconductor device, display device, module, and electronic device
|
|
TWI686899B
(zh)
|
2014-05-02 |
2020-03-01 |
日商半導體能源研究所股份有限公司 |
半導體裝置、觸控感測器、顯示裝置
|
|
JP6537341B2
(ja)
|
2014-05-07 |
2019-07-03 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
TWI772799B
(zh)
|
2014-05-09 |
2022-08-01 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
|
TWI672804B
(zh)
|
2014-05-23 |
2019-09-21 |
Semiconductor Energy Laboratory Co., Ltd. |
半導體裝置的製造方法
|
|
US9874775B2
(en)
|
2014-05-28 |
2018-01-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device and electronic device
|
|
WO2015181997A1
(en)
|
2014-05-30 |
2015-12-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
TWI646658B
(zh)
|
2014-05-30 |
2019-01-01 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
|
WO2015182000A1
(en)
*
|
2014-05-30 |
2015-12-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, manufacturing method thereof, and electronic device
|
|
US9881954B2
(en)
*
|
2014-06-11 |
2018-01-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device
|
|
WO2015189731A1
(en)
|
2014-06-13 |
2015-12-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device including the semiconductor device
|
|
KR20150146409A
(ko)
|
2014-06-20 |
2015-12-31 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 표시 장치, 입출력 장치, 및 전자 기기
|
|
US9461179B2
(en)
|
2014-07-11 |
2016-10-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Thin film transistor device (TFT) comprising stacked oxide semiconductor layers and having a surrounded channel structure
|
|
WO2016017519A1
(ja)
|
2014-07-29 |
2016-02-04 |
Dic株式会社 |
液晶表示素子
|
|
WO2016017521A1
(ja)
|
2014-07-29 |
2016-02-04 |
Dic株式会社 |
液晶表示素子
|
|
US10147747B2
(en)
|
2014-08-21 |
2018-12-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, manufacturing method thereof, and electronic device
|
|
WO2016046685A1
(en)
|
2014-09-26 |
2016-03-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device
|
|
JP6570417B2
(ja)
|
2014-10-24 |
2019-09-04 |
株式会社半導体エネルギー研究所 |
撮像装置および電子機器
|
|
JP2016092413A
(ja)
|
2014-10-29 |
2016-05-23 |
株式会社半導体エネルギー研究所 |
撮像装置および電子機器
|
|
TWI711165B
(zh)
|
2014-11-21 |
2020-11-21 |
日商半導體能源研究所股份有限公司 |
半導體裝置及電子裝置
|
|
KR102524983B1
(ko)
|
2014-11-28 |
2023-04-21 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 모듈, 및 전자 기기
|
|
JP6647841B2
(ja)
|
2014-12-01 |
2020-02-14 |
株式会社半導体エネルギー研究所 |
酸化物の作製方法
|
|
US9773832B2
(en)
|
2014-12-10 |
2017-09-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device
|
|
US10522693B2
(en)
|
2015-01-16 |
2019-12-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device and electronic device
|
|
JP6857447B2
(ja)
|
2015-01-26 |
2021-04-14 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
TWI792065B
(zh)
|
2015-01-30 |
2023-02-11 |
日商半導體能源研究所股份有限公司 |
成像裝置及電子裝置
|
|
TWI732383B
(zh)
|
2015-02-06 |
2021-07-01 |
日商半導體能源研究所股份有限公司 |
裝置及其製造方法以及電子裝置
|
|
KR20250143145A
(ko)
|
2015-02-06 |
2025-09-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
|
US10439068B2
(en)
|
2015-02-12 |
2019-10-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor film and semiconductor device
|
|
US9685560B2
(en)
|
2015-03-02 |
2017-06-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor, method for manufacturing transistor, semiconductor device, and electronic device
|
|
TWI686870B
(zh)
|
2015-03-03 |
2020-03-01 |
日商半導體能源研究所股份有限公司 |
半導體裝置、顯示裝置及使用該顯示裝置之電子裝置
|
|
CN107406966B
(zh)
|
2015-03-03 |
2020-11-20 |
株式会社半导体能源研究所 |
氧化物半导体膜、包括该氧化物半导体膜的半导体装置以及包括该半导体装置的显示装置
|
|
CN114546158A
(zh)
|
2015-03-17 |
2022-05-27 |
株式会社半导体能源研究所 |
触摸屏
|
|
JP6765199B2
(ja)
|
2015-03-17 |
2020-10-07 |
株式会社半導体エネルギー研究所 |
タッチパネル
|
|
KR102582523B1
(ko)
|
2015-03-19 |
2023-09-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 전자 기기
|
|
JP6662665B2
(ja)
|
2015-03-19 |
2020-03-11 |
株式会社半導体エネルギー研究所 |
液晶表示装置及び該液晶表示装置を用いた電子機器
|
|
US9634048B2
(en)
|
2015-03-24 |
2017-04-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device and electronic device
|
|
US10429704B2
(en)
|
2015-03-26 |
2019-10-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device, display module including the display device, and electronic device including the display device or the display module
|
|
TWI880211B
(zh)
|
2015-03-27 |
2025-04-11 |
日商半導體能源研究所股份有限公司 |
觸控面板
|
|
US9716852B2
(en)
|
2015-04-03 |
2017-07-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Broadcast system
|
|
US9685476B2
(en)
|
2015-04-03 |
2017-06-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device and electronic device
|
|
US10389961B2
(en)
|
2015-04-09 |
2019-08-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device and electronic device
|
|
US10372274B2
(en)
|
2015-04-13 |
2019-08-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and touch panel
|
|
US9848146B2
(en)
|
2015-04-23 |
2017-12-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device and electronic device
|
|
DE102016206922A1
(de)
|
2015-05-08 |
2016-11-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Touchscreen
|
|
US9912897B2
(en)
|
2015-05-11 |
2018-03-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device and electronic device
|
|
US10684500B2
(en)
|
2015-05-27 |
2020-06-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Touch panel
|
|
US10139663B2
(en)
|
2015-05-29 |
2018-11-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Input/output device and electronic device
|
|
KR102553553B1
(ko)
|
2015-06-12 |
2023-07-10 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
촬상 장치, 및 그 동작 방법 및 전자 기기
|
|
JP2017003976A
(ja)
|
2015-06-15 |
2017-01-05 |
株式会社半導体エネルギー研究所 |
表示装置
|
|
TWI713367B
(zh)
|
2015-07-07 |
2020-12-11 |
日商半導體能源研究所股份有限公司 |
成像裝置及其運作方法
|
|
CN105140271B
(zh)
*
|
2015-07-16 |
2019-03-26 |
深圳市华星光电技术有限公司 |
薄膜晶体管、薄膜晶体管的制造方法及显示装置
|
|
US9887218B2
(en)
|
2015-07-16 |
2018-02-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device, operating method thereof, and electronic device
|
|
US9876946B2
(en)
|
2015-08-03 |
2018-01-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device and electronic device
|
|
US10373991B2
(en)
|
2015-08-19 |
2019-08-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device, operating method thereof, and electronic device
|
|
WO2017037564A1
(en)
|
2015-08-28 |
2017-03-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor, transistor, and semiconductor device
|
|
US10090344B2
(en)
|
2015-09-07 |
2018-10-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device, method for operating the same, module, and electronic device
|
|
KR102544169B1
(ko)
|
2015-09-10 |
2023-06-14 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
촬상 장치, 모듈, 전자 기기, 및 촬상 장치의 동작 방법
|
|
JP6807683B2
(ja)
|
2015-09-11 |
2021-01-06 |
株式会社半導体エネルギー研究所 |
入出力パネル
|
|
US10896923B2
(en)
|
2015-09-18 |
2021-01-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of operating an imaging device with global shutter system
|
|
JP2017063420A
(ja)
|
2015-09-25 |
2017-03-30 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
KR20180063084A
(ko)
|
2015-09-30 |
2018-06-11 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 전자 기기
|
|
US10109667B2
(en)
|
2015-10-09 |
2018-10-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device, module, and electronic device
|
|
WO2017064590A1
(en)
|
2015-10-12 |
2017-04-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
JP6851166B2
(ja)
|
2015-10-12 |
2021-03-31 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
JP6864456B2
(ja)
|
2015-10-15 |
2021-04-28 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US10559697B2
(en)
|
2015-11-20 |
2020-02-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, manufacturing method of the semiconductor device, or display device including the semiconductor device
|
|
US11329166B2
(en)
|
2015-11-20 |
2022-05-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, display device including the semiconductor device, and an electronic device including the semiconductor device
|
|
KR20170061602A
(ko)
|
2015-11-26 |
2017-06-05 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 전자 기기
|
|
JP6917700B2
(ja)
|
2015-12-02 |
2021-08-11 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
KR20180093000A
(ko)
|
2015-12-11 |
2018-08-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치 및 분리 방법
|
|
JP6802701B2
(ja)
|
2015-12-18 |
2020-12-16 |
株式会社半導体エネルギー研究所 |
表示装置、モジュール及び電子機器
|
|
US10020336B2
(en)
|
2015-12-28 |
2018-07-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device and electronic device using three dimentional (3D) integration
|
|
KR102617041B1
(ko)
|
2015-12-28 |
2023-12-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
장치, 텔레비전 시스템, 및 전자 기기
|
|
US10027896B2
(en)
|
2016-01-15 |
2018-07-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Image display system, operation method of the same, and electronic device
|
|
KR20250044456A
(ko)
|
2016-01-29 |
2025-03-31 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 및 상기 반도체 장치를 가지는 표시 장치
|
|
JP7020783B2
(ja)
|
2016-02-03 |
2022-02-16 |
株式会社半導体エネルギー研究所 |
撮像装置
|
|
US10115741B2
(en)
|
2016-02-05 |
2018-10-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device
|
|
KR20170096956A
(ko)
|
2016-02-17 |
2017-08-25 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 전자 기기
|
|
US10347681B2
(en)
|
2016-02-19 |
2019-07-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device
|
|
US10573621B2
(en)
|
2016-02-25 |
2020-02-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging system and manufacturing apparatus
|
|
US10263114B2
(en)
|
2016-03-04 |
2019-04-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, method for manufacturing the same, or display device including the same
|
|
WO2017149413A1
(en)
|
2016-03-04 |
2017-09-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US10014325B2
(en)
|
2016-03-10 |
2018-07-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device
|
|
US9882064B2
(en)
|
2016-03-10 |
2018-01-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor and electronic device
|
|
KR102721654B1
(ko)
|
2016-03-11 |
2024-10-23 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
복합체 및 트랜지스터
|
|
KR102917764B1
(ko)
|
2016-03-11 |
2026-01-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
입출력 패널, 입출력 장치
|
|
KR102370488B1
(ko)
|
2016-03-15 |
2022-03-04 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치, 모듈, 및 전자 기기
|
|
WO2017158478A1
(ja)
|
2016-03-18 |
2017-09-21 |
株式会社半導体エネルギー研究所 |
撮像装置および電子機器
|
|
US10333004B2
(en)
|
2016-03-18 |
2019-06-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, semiconductor wafer, module and electronic device
|
|
KR102448587B1
(ko)
|
2016-03-22 |
2022-09-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치
|
|
US10096720B2
(en)
|
2016-03-25 |
2018-10-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor, semiconductor device, and electronic device
|
|
JP6863803B2
(ja)
|
2016-04-07 |
2021-04-21 |
株式会社半導体エネルギー研究所 |
表示装置
|
|
WO2017175095A1
(en)
|
2016-04-08 |
2017-10-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US10032918B2
(en)
|
2016-04-22 |
2018-07-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
JP6968567B2
(ja)
|
2016-04-22 |
2021-11-17 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
KR102492209B1
(ko)
|
2016-05-19 |
2023-01-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
복합 산화물 반도체 및 트랜지스터
|
|
JP7109887B2
(ja)
|
2016-05-20 |
2022-08-01 |
株式会社半導体エネルギー研究所 |
表示システム
|
|
CN114664949A
(zh)
|
2016-06-03 |
2022-06-24 |
株式会社半导体能源研究所 |
场效应晶体管
|
|
US10461197B2
(en)
|
2016-06-03 |
2019-10-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Sputtering target, oxide semiconductor, oxynitride semiconductor, and transistor
|
|
US10078243B2
(en)
|
2016-06-03 |
2018-09-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
|
TWI712029B
(zh)
|
2016-06-17 |
2020-12-01 |
日商半導體能源研究所股份有限公司 |
顯示裝置，及顯示裝置的驅動方法
|
|
KR102330605B1
(ko)
|
2016-06-22 |
2021-11-24 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
TWI709952B
(zh)
|
2016-07-01 |
2020-11-11 |
日商半導體能源研究所股份有限公司 |
電子裝置、電子裝置的驅動方法
|
|
TWI737665B
(zh)
|
2016-07-01 |
2021-09-01 |
日商半導體能源硏究所股份有限公司 |
半導體裝置以及半導體裝置的製造方法
|
|
TWI720097B
(zh)
|
2016-07-11 |
2021-03-01 |
日商半導體能源硏究所股份有限公司 |
濺射靶材及濺射靶材的製造方法
|
|
WO2018020350A1
(en)
|
2016-07-26 |
2018-02-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP6962731B2
(ja)
|
2016-07-29 |
2021-11-05 |
株式会社半導体エネルギー研究所 |
半導体装置、表示システム及び電子機器
|
|
KR102458660B1
(ko)
|
2016-08-03 |
2022-10-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치 및 전자 기기
|
|
US10205008B2
(en)
|
2016-08-03 |
2019-02-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
|
US10678078B2
(en)
|
2016-08-05 |
2020-06-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and method for manufacturing the display device
|
|
JP6298116B2
(ja)
*
|
2016-08-05 |
2018-03-20 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
KR20180016271A
(ko)
|
2016-08-05 |
2018-02-14 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
|
WO2018033822A1
(ja)
|
2016-08-17 |
2018-02-22 |
株式会社半導体エネルギー研究所 |
表示装置
|
|
JP2018032018A
(ja)
|
2016-08-17 |
2018-03-01 |
株式会社半導体エネルギー研究所 |
半導体装置、表示モジュール及び電子機器
|
|
CN109565280B
(zh)
|
2016-08-19 |
2023-02-17 |
株式会社半导体能源研究所 |
半导体装置的电源控制方法
|
|
TW202129783A
(zh)
|
2016-08-24 |
2021-08-01 |
日商半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
WO2018042285A1
(en)
|
2016-08-30 |
2018-03-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, display device, and electronic device
|
|
US9978879B2
(en)
|
2016-08-31 |
2018-05-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
WO2018051208A1
(en)
|
2016-09-14 |
2018-03-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method of the same
|
|
KR102372150B1
(ko)
|
2016-09-30 |
2022-03-07 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 시스템 및 전자 기기
|
|
KR20180037105A
(ko)
|
2016-10-03 |
2018-04-11 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치, 표시 모듈, 및 표시 장치의 제작 방법
|
|
US10411003B2
(en)
|
2016-10-14 |
2019-09-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
KR102384624B1
(ko)
|
2016-10-21 |
2022-04-11 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
TW202129966A
(zh)
|
2016-10-21 |
2021-08-01 |
日商半導體能源研究所股份有限公司 |
複合氧化物及電晶體
|
|
KR20180048327A
(ko)
|
2016-11-01 |
2018-05-10 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 및 반도체 장치의 제작 방법
|
|
US10955950B2
(en)
|
2016-11-09 |
2021-03-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device, display module, electronic device, and method for manufacturing the display device
|
|
CN109937443A
(zh)
|
2016-11-10 |
2019-06-25 |
株式会社半导体能源研究所 |
显示装置及显示装置的驱动方法
|
|
KR20180055701A
(ko)
|
2016-11-17 |
2018-05-25 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제작 방법
|
|
US10790318B2
(en)
|
2016-11-22 |
2020-09-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device, method for manufacturing the same, and electronic device
|
|
JP7050460B2
(ja)
|
2016-11-22 |
2022-04-08 |
株式会社半導体エネルギー研究所 |
表示装置
|
|
US11726376B2
(en)
|
2016-11-23 |
2023-08-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device, display module, and electronic device
|
|
US20180145096A1
(en)
|
2016-11-23 |
2018-05-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and electronic device
|
|
US10756118B2
(en)
|
2016-11-30 |
2020-08-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device, display module, and electronic device
|
|
US10748479B2
(en)
|
2016-12-07 |
2020-08-18 |
Semiconductor Energy Laboratories Co., Ltd. |
Semiconductor device, display system, and electronic device
|
|
US10147681B2
(en)
|
2016-12-09 |
2018-12-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
JP2017058700A
(ja)
*
|
2016-12-15 |
2017-03-23 |
株式会社半導体エネルギー研究所 |
半導体装置及び液晶表示装置
|
|
US10319743B2
(en)
|
2016-12-16 |
2019-06-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, display system, and electronic device
|
|
CN108307131B
(zh)
|
2016-12-27 |
2021-08-03 |
株式会社半导体能源研究所 |
摄像装置及电子设备
|
|
WO2018130899A1
(en)
|
2017-01-11 |
2018-07-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
|
CN110178170B
(zh)
|
2017-01-16 |
2021-12-07 |
株式会社半导体能源研究所 |
显示装置
|
|
JP7110116B2
(ja)
|
2017-01-16 |
2022-08-01 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
TWI748035B
(zh)
|
2017-01-20 |
2021-12-01 |
日商半導體能源硏究所股份有限公司 |
顯示系統及電子裝置
|
|
WO2018138619A1
(en)
|
2017-01-30 |
2018-08-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US10608017B2
(en)
|
2017-01-31 |
2020-03-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device, display module, and electronic device
|
|
WO2018167593A1
(ja)
|
2017-03-13 |
2018-09-20 |
株式会社半導体エネルギー研究所 |
複合酸化物、およびトランジスタ
|
|
KR102608086B1
(ko)
|
2017-03-29 |
2023-11-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 반도체 장치의 제작 방법
|
|
JP6498715B2
(ja)
*
|
2017-04-05 |
2019-04-10 |
三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． |
表示装置
|
|
WO2018197994A1
(en)
|
2017-04-28 |
2018-11-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method of semiconductor device
|
|
WO2019003026A1
(en)
|
2017-06-27 |
2019-01-03 |
Semiconductor Energy Laboratory Co., Ltd. |
DISPLAY SYSTEM AND METHOD FOR PROCESSING DATA
|
|
KR102637403B1
(ko)
|
2017-07-26 |
2024-02-15 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제작 방법
|
|
KR102472837B1
(ko)
|
2017-08-11 |
2022-11-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치 및 전자 기기
|
|
WO2019038664A1
(ja)
|
2017-08-25 |
2019-02-28 |
株式会社半導体エネルギー研究所 |
半導体装置、および半導体装置の作製方法
|
|
WO2019043483A1
(en)
|
2017-08-31 |
2019-03-07 |
Semiconductor Energy Laboratory Co., Ltd. |
DISPLAY DEVICE AND ELECTRONIC DEVICE
|
|
WO2019048966A1
(ja)
*
|
2017-09-05 |
2019-03-14 |
株式会社半導体エネルギー研究所 |
表示システム
|
|
KR102614815B1
(ko)
|
2017-09-15 |
2023-12-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치 및 전자 기기
|
|
US11296085B2
(en)
|
2017-09-15 |
2022-04-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR20250159074A
(ko)
|
2017-11-02 |
2025-11-07 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치 및 전자 기기
|
|
DE112018005399T5
(de)
|
2017-11-09 |
2020-06-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Anzeigevorrichtung, Betriebsverfahren dafür und elektronisches Gerät
|
|
US10957720B2
(en)
|
2017-11-09 |
2021-03-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, display device, and electronic device
|
|
WO2019123288A1
(ja)
|
2017-12-22 |
2019-06-27 |
株式会社半導体エネルギー研究所 |
表示装置および電子機器
|
|
US11733574B2
(en)
|
2018-01-05 |
2023-08-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device, display module, and electronic device
|
|
US11204533B2
(en)
|
2018-03-06 |
2021-12-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and electronic device
|
|
US12276889B1
(en)
|
2018-04-06 |
2025-04-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device, operation method of display device, and electronic device
|
|
CN116631356B
(zh)
|
2018-04-26 |
2026-02-17 |
株式会社半导体能源研究所 |
显示装置及电子设备
|
|
JP7337782B2
(ja)
|
2018-04-26 |
2023-09-04 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
CN119208351A
(zh)
|
2018-05-17 |
2024-12-27 |
株式会社半导体能源研究所 |
显示装置
|
|
CN112136173B
(zh)
|
2018-05-25 |
2025-02-28 |
株式会社半导体能源研究所 |
显示装置及电子设备
|
|
CN119403406A
(zh)
|
2018-06-06 |
2025-02-07 |
株式会社半导体能源研究所 |
显示装置、显示模块及电子设备
|
|
KR102799415B1
(ko)
|
2018-07-05 |
2025-04-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치 및 전자 기기
|
|
CN112567446B
(zh)
|
2018-08-21 |
2024-09-20 |
株式会社半导体能源研究所 |
显示装置及电子设备
|
|
US11435637B2
(en)
|
2018-09-21 |
2022-09-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Display apparatus and electronic device
|
|
CN113196366A
(zh)
|
2018-09-28 |
2021-07-30 |
株式会社半导体能源研究所 |
显示装置的制造方法、显示装置的制造装置
|
|
KR20210081365A
(ko)
|
2018-10-26 |
2021-07-01 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 및 반도체 장치의 제작 방법
|
|
US11774816B2
(en)
|
2018-11-02 |
2023-10-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device, display module, and electronic device
|
|
CN112955946B
(zh)
|
2018-11-09 |
2025-05-02 |
株式会社半导体能源研究所 |
显示装置及电子设备
|
|
KR20210102249A
(ko)
|
2018-12-19 |
2021-08-19 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치 및 전자 기기
|
|
KR102841341B1
(ko)
*
|
2018-12-21 |
2025-07-31 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 그리고 전자 기기 및 인공위성
|
|
US11107929B2
(en)
|
2018-12-21 |
2021-08-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
WO2020136494A1
(ja)
|
2018-12-26 |
2020-07-02 |
株式会社半導体エネルギー研究所 |
表示装置および電子機器
|
|
CN113348501A
(zh)
|
2019-02-05 |
2021-09-03 |
株式会社半导体能源研究所 |
显示装置及电子设备
|
|
KR102936835B1
(ko)
|
2019-05-10 |
2026-03-09 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치 및 전자 기기
|
|
JP7486480B2
(ja)
|
2019-05-30 |
2024-05-17 |
株式会社半導体エネルギー研究所 |
表示装置および電子機器
|
|
JP7508454B2
(ja)
|
2019-06-21 |
2024-07-01 |
株式会社半導体エネルギー研究所 |
記憶回路
|
|
US11210048B2
(en)
|
2019-10-04 |
2021-12-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device, display module, and electronic device
|
|
US20230255060A1
(en)
|
2020-07-09 |
2023-08-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Display apparatus and electronic device
|
|
TWI907464B
(zh)
|
2020-08-12 |
2025-12-11 |
日商半導體能源研究所股份有限公司 |
顯示裝置、其工作方法以及電子裝置
|
|
KR20230078700A
(ko)
|
2020-10-01 |
2023-06-02 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치 및 전자 기기
|
|
US12009432B2
(en)
|
2021-03-05 |
2024-06-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor and display device
|
|
TW202320033A
(zh)
|
2021-11-05 |
2023-05-16 |
日商半導體能源研究所股份有限公司 |
顯示裝置及電子裝置
|
|
US20250004337A1
(en)
|
2021-11-26 |
2025-01-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and electronic device
|
|
JP7790950B2
(ja)
|
2021-12-09 |
2025-12-23 |
株式会社Magnolia White |
Ｔｆｔ基板及びｔｆｔ基板の製造方法
|
|
TW202329259A
(zh)
|
2021-12-16 |
2023-07-16 |
日商半導體能源研究所股份有限公司 |
顯示裝置及電子裝置
|
|
KR20250160964A
(ko)
|
2023-03-17 |
2025-11-14 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치 및 표시 장치의 제작 방법
|