JP5975466B2 - Ga2O3系半導体素子 - Google Patents
Ga2O3系半導体素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 24
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 title 1
- 239000013078 crystal Substances 0.000 claims description 56
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 27
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 20
- 239000010408 film Substances 0.000 description 47
- 239000002019 doping agent Substances 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000001451 molecular beam epitaxy Methods 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 238000002513 implantation Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 229910052745 lead Inorganic materials 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 229910052794 bromium Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 2
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- BGPPUXMKKQMWLV-UHFFFAOYSA-N 1,2,4,5-tetrachloro-3-methoxy-6-nitrobenzene Chemical compound COC1=C(Cl)C(Cl)=C([N+]([O-])=O)C(Cl)=C1Cl BGPPUXMKKQMWLV-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- -1 ITO Chemical class 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 101100480797 Trypanosoma cruzi TCNA gene Proteins 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
- H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
- H01L29/66863—Lateral single gate transistors
- H01L29/66871—Processes wherein the final gate is made after the formation of the source and drain regions in the active layer, e.g. dummy-gate processes
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Thin Film Transistor (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
実施の形態では、Ga2O3系半導体素子としてのGa2O3系MESFET(Metal Semiconductor Field Effect Transistor)について説明する。
図1は、実施の形態に係るGa2O3系MESFETの断面図である。Ga2O3系MESFET10は、α−Al2O3基板2上に形成されたn型α−(AlxGa1-x)2O3単結晶膜3と、n型α−(AlxGa1-x)2O3単結晶膜3上に形成されたソース電極12及びドレイン電極13と、n型α−(AlxGa1-x)2O3単結晶膜3中にソース電極12及びドレイン電極13の下にそれぞれ形成されたコンタクト領域14、15と、n型α−(AlxGa1-x)2O3単結晶膜3のソース電極12とドレイン電極13の間の領域上に形成されたゲート電極11とを含む。
α−(AlxGa1-x)2O3単結晶膜の製造方法の一例として、分子線エピタキシー(MBE;Molecular Beam Epitaxy)法による方法を以下に説明する。MBE法は、単体あるいは化合物の固体をセルと呼ばれる蒸発源で加熱し、加熱により生成された蒸気を分子線として基板表面に供給する結晶成長方法である。
本実施の形態によれば、ホモエピタキシャル成長法を用いて高品質なα−(AlxGa1-x)2O3単結晶膜を形成し、そのα−(AlxGa1-x)2O3単結晶膜を用いて、高品質のGa2O3系半導体素子を形成することができる。また、これらのGa2O3系半導体素子は、高品質なα−(AlxGa1-x)2O3単結晶膜をチャネル層として用いるため、優れた動作性能を有する。
Claims (3)
- α−Al2O3基板上に直接形成されたα−(AlxGa1−x)2O3単結晶(0≦x<1)からなるα−(AlxGa1−x)2O3単結晶膜と、
前記α−(AlxGa1−x)2O3単結晶膜上に形成されたソース電極及びドレイン電極と、
前記α−(AlxGa1−x)2O3単結晶膜の前記ソース電極と前記ドレイン電極との間の領域上に形成され、前記α−(AlxGa1−x)2O3単結晶膜との界面にショットキー接合を形成するゲート電極と、
を含むGa2O3系半導体素子。 - 前記α−(AlxGa1−x)2O3単結晶膜中に形成され、前記ソース電極及び前記ドレイン電極にそれぞれ接続された、前記α−(AlxGa1−x)2O3単結晶膜と同じ導電型の第1のコンタクト領域及び第2のコンタクト領域をさらに含む、
請求項1に記載のGa2O3系半導体素子。 - 前記α−(AlxGa1−x)2O3単結晶膜、第1のコンタクト領域、及び第2のコンタクト領域はn型である、
請求項2に記載のGa2O3系半導体素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2011196439 | 2011-09-08 | ||
JP2011196439 | 2011-09-08 | ||
PCT/JP2012/072900 WO2013035844A1 (ja) | 2011-09-08 | 2012-09-07 | Ga2O3系半導体素子 |
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JPWO2013035844A1 JPWO2013035844A1 (ja) | 2015-03-23 |
JP5975466B2 true JP5975466B2 (ja) | 2016-08-23 |
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JP2013532672A Active JP5975466B2 (ja) | 2011-09-08 | 2012-09-07 | Ga2O3系半導体素子 |
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US (1) | US20140217471A1 (ja) |
JP (1) | JP5975466B2 (ja) |
WO (1) | WO2013035844A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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US10109707B2 (en) | 2014-03-31 | 2018-10-23 | Flosfia Inc. | Crystalline multilayer oxide thin films structure in semiconductor device |
EP2933825B1 (en) * | 2014-03-31 | 2017-07-05 | Flosfia Inc. | Crystalline multilayer structure and semiconductor device |
US9590050B2 (en) | 2014-05-08 | 2017-03-07 | Flosfia, Inc. | Crystalline multilayer structure and semiconductor device |
JP6158757B2 (ja) * | 2014-06-25 | 2017-07-05 | 日本電信電話株式会社 | 酸化ガリウム結晶膜形成方法 |
JP6281146B2 (ja) * | 2014-07-22 | 2018-02-21 | 株式会社Flosfia | 結晶性半導体膜および板状体ならびに半導体装置 |
JP5828568B1 (ja) | 2014-08-29 | 2015-12-09 | 株式会社タムラ製作所 | 半導体素子及びその製造方法 |
JP6945119B2 (ja) * | 2014-11-26 | 2021-10-06 | 株式会社Flosfia | 結晶性積層構造体およびその製造方法 |
JP6906217B2 (ja) * | 2015-12-18 | 2021-07-21 | 株式会社Flosfia | 半導体装置 |
JP2017118090A (ja) * | 2015-12-21 | 2017-06-29 | 株式会社Flosfia | 積層構造体および半導体装置 |
US20180097073A1 (en) * | 2016-10-03 | 2018-04-05 | Flosfia Inc. | Semiconductor device and semiconductor system including semiconductor device |
US11410850B2 (en) | 2018-09-03 | 2022-08-09 | Uacj Corporation | Aluminum oxide semiconductor manufacturing method and aluminum oxide semiconductor manufacturing device |
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US4968637A (en) * | 1989-05-31 | 1990-11-06 | Raytheon Company | Method of manufacture TiW alignment mark and implant mask |
JP3449116B2 (ja) * | 1996-05-16 | 2003-09-22 | ソニー株式会社 | 半導体装置 |
JP2005223274A (ja) * | 2004-02-09 | 2005-08-18 | Advanced Lcd Technologies Development Center Co Ltd | 薄膜半導体素子 |
JP2007073732A (ja) * | 2005-09-07 | 2007-03-22 | Showa Denko Kk | 化合物半導体素子 |
JP5078246B2 (ja) * | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
JP2007287451A (ja) * | 2006-04-14 | 2007-11-01 | Kochi Univ Of Technology | イオンをドーピングする装置、イオンをドーピングする方法、半導体装置の製法及び薄膜トランジスタの製法 |
JP2013051221A (ja) * | 2009-12-28 | 2013-03-14 | Panasonic Corp | 半導体装置の製造方法及びプラズマドーピング装置 |
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- 2012-09-07 US US14/343,660 patent/US20140217471A1/en not_active Abandoned
- 2012-09-07 JP JP2013532672A patent/JP5975466B2/ja active Active
- 2012-09-07 WO PCT/JP2012/072900 patent/WO2013035844A1/ja active Application Filing
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JPWO2013035844A1 (ja) | 2015-03-23 |
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