JP5952360B2 - Ga含有酸化物層成長用β−Ga2O3系単結晶基板 - Google Patents
Ga含有酸化物層成長用β−Ga2O3系単結晶基板 Download PDFInfo
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- JP5952360B2 JP5952360B2 JP2014179414A JP2014179414A JP5952360B2 JP 5952360 B2 JP5952360 B2 JP 5952360B2 JP 2014179414 A JP2014179414 A JP 2014179414A JP 2014179414 A JP2014179414 A JP 2014179414A JP 5952360 B2 JP5952360 B2 JP 5952360B2
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- 239000013078 crystal Substances 0.000 title claims description 165
- 239000000758 substrate Substances 0.000 title claims description 100
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 title 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 176
- 238000000034 method Methods 0.000 description 15
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 12
- 239000002994 raw material Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 238000001451 molecular beam epitaxy Methods 0.000 description 11
- 238000004140 cleaning Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 229910021642 ultra pure water Inorganic materials 0.000 description 4
- 239000012498 ultrapure water Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Description
本実施の形態によれば、β−Ga2O3系基板上にβ−Ga2O3系結晶を効率よくエピタキシャル成長させて、異相が混入しない高品質なβ−Ga2O3系結晶膜を形成することができる。(100)面を主面とするβ−Ga2O3系基板上にβ−Ga2O3系結晶をエピタキシャル成長させる従来の方法によれば、高品質な結晶を成長させるために求められる成長温度、例えば700℃以上の成長温度では十分な成長速度が得られず、結晶を効率的に成長させることができない。しかし、本発明者等は、(100)面から50°以上90°以下回転させた面を主面として有するβ−Ga2O3系基板をエピタキシャル結晶成長の下地として用いることにより、高品質なβ−Ga2O3系結晶を十分な速度で成長させられることを見出した。以下、その実施の形態の一例について詳細に説明する。
図1は、実施の形態に係るGa含有酸化物層成長用β−Ga2O3系単結晶基板を含む結晶積層構造体の断面図である。結晶積層構造体2は、β−Ga2O3系基板1及びβ−Ga2O3系基板1の主面10上に形成されたβ−Ga2O3系結晶膜20を含む。
まず、例えば、FZ(Floating Zone)法やEFG(Edge Defined Film Fed Growt)法等により、β−Ga2O3系基板1のためのインゴットを製造する。
この実施の形態として、結晶積層構造体に関する実施の形態に係るβ−Ga2O3系基板1及びβ−Ga2O3系結晶膜20を含む半導体装置の1つである高電子移動度トランジスタ(High Electron Mobility Transistor:HEMT)について説明する。
この実施の形態として、結晶積層構造体に関する実施の形態に係るβ−Ga2O3系基板1及びβ−Ga2O3系結晶膜20を含む半導体装置の1つであるMESFET(Metal-Semiconductor Field Effect Transistor)について説明する。
この実施の形態として、結晶積層構造体に関する実施の形態に係るβ−Ga2O3系基板1及びβ−Ga2O3系結晶膜20を含む半導体装置の1つであるショットキーバリアダイオードについて説明する。
上記の実施の形態によれば、(100)面から50°以上90°以下回転させた面を主面として有するβ−Ga2O3系基板をエピタキシャル結晶成長の下地として用いることにより、β−Ga2O3系結晶を十分な速度で成長させ、高品質なβ−Ga2O3系結晶膜を形成することができる。また、その高品質なβ−Ga2O3系結晶膜を用いて、動作特性に優れた高性能の半導体装置を形成することができる。
Claims (3)
- (100)面からb軸あるいはc軸を回転軸として50°以上90°以下回転させた面を主面として有するGa含有酸化物層成長用β−Ga2O3系単結晶基板。
- 前記主面は、(010)面、(001)面、(−201)面、(101)面、及び(310)面のいずれかの面である、
請求項1に記載のGa含有酸化物層成長用β−Ga2O3系単結晶基板。 - 前記主面は、研削、研磨、及びクリーニングされた面である、
請求項1あるいは2に記載のGa含有酸化物層成長用β−Ga2O3系単結晶基板。
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JP2014179414A JP5952360B2 (ja) | 2011-09-08 | 2014-09-03 | Ga含有酸化物層成長用β−Ga2O3系単結晶基板 |
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JP2011196430 | 2011-09-08 | ||
JP2011196430 | 2011-09-08 | ||
JP2014179414A JP5952360B2 (ja) | 2011-09-08 | 2014-09-03 | Ga含有酸化物層成長用β−Ga2O3系単結晶基板 |
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JP2013532498A Division JP5612216B2 (ja) | 2011-09-08 | 2012-08-02 | 結晶積層構造体及びその製造方法 |
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JP2014221719A JP2014221719A (ja) | 2014-11-27 |
JP5952360B2 true JP5952360B2 (ja) | 2016-07-13 |
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