JP6142358B2 - Ga2O3系半導体素子 - Google Patents
Ga2O3系半導体素子 Download PDFInfo
- Publication number
- JP6142358B2 JP6142358B2 JP2013532671A JP2013532671A JP6142358B2 JP 6142358 B2 JP6142358 B2 JP 6142358B2 JP 2013532671 A JP2013532671 A JP 2013532671A JP 2013532671 A JP2013532671 A JP 2013532671A JP 6142358 B2 JP6142358 B2 JP 6142358B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal film
- type
- region
- contact region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 27
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 title 1
- 239000013078 crystal Substances 0.000 claims description 93
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 43
- 239000002019 doping agent Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 29
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 23
- 210000000746 body region Anatomy 0.000 claims description 12
- 239000010408 film Substances 0.000 description 89
- 238000000034 method Methods 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 238000002513 implantation Methods 0.000 description 6
- 229910052745 lead Inorganic materials 0.000 description 6
- 229910052748 manganese Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000001451 molecular beam epitaxy Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 229910052790 beryllium Inorganic materials 0.000 description 3
- 229910052794 bromium Inorganic materials 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 3
- 229910052792 caesium Inorganic materials 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 229910052730 francium Inorganic materials 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 229910052701 rubidium Inorganic materials 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910017061 Fe Co Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Recrystallisation Techniques (AREA)
Description
第1の実施の形態では、Ga2O3系半導体素子としてのプレーナゲート構造を有するGa2O3系MISFET(Metal Insulator Semiconductor Field Effect Transistor)について説明する。
図1は、第1の実施の形態に係るGa2O3系MISFETの断面図である。Ga2O3系MISFET10は、α−Al2O3基板2上に形成されたn型α−(AlxGa1-x)2O3単結晶膜3と、n型α−(AlxGa1-x)2O3単結晶膜3上に形成されたソース電極12及びドレイン電極13と、n型α−(AlxGa1-x)2O3単結晶膜3中にソース電極12及びドレイン電極13の下にそれぞれ形成されたコンタクト領域14、15と、n型α−(AlxGa1-x)2O3単結晶膜3のコンタクト領域14とコンタクト領域15の間の領域上にゲート絶縁膜16を介して形成されたゲート電極11と、コンタクト領域14を囲むボディ領域17とを含む。
α−(AlxGa1-x)2O3単結晶膜の製造方法の一例として、分子線エピタキシー(MBE;Molecular Beam Epitaxy)法による方法を以下に説明する。MBE法は、単体あるいは化合物の固体をセルと呼ばれる蒸発源で加熱し、加熱により生成された蒸気を分子線として基板表面に供給する結晶成長方法である。
図3は、第2の実施の形態に係るGa2O3系MISFETの断面図である。Ga2O3系MISFET20は、α−Al2O3基板2上に形成されたアンドープα−(AlxGa1-x)2O3単結晶膜4と、アンドープα−(AlxGa1-x)2O3単結晶膜4上に形成されたソース電極22及びドレイン電極23と、アンドープα−(AlxGa1-x)2O3単結晶膜4中のソース電極22及びドレイン電極23の下にそれぞれ形成されたコンタクト領域24、25と、アンドープα−(AlxGa1-x)2O3単結晶膜4のコンタクト領域24とコンタクト領域25の間の領域上にゲート絶縁膜26を介して形成されたゲート電極21とを含む。
第3の実施の形態は、アンドープα−(AlxGa1-x)2O3単結晶膜4の代わりにp型α−(AlxGa1-x)2O3単結晶膜が形成される点において第2の実施の形態と異なる。第2の実施の形態と同様の点については、説明を省略又は簡略化する。
本実施の形態によれば、ホモエピタキシャル成長法を用いて高品質なα−(AlxGa1-x)2O3単結晶膜を形成し、そのα−(AlxGa1-x)2O3単結晶膜を用いて、高品質のGa2O3系半導体素子を形成することができる。また、これらのGa2O3系半導体素子は、高品質なα−(AlxGa1-x)2O3単結晶膜をチャネル層として用いるため、優れた動作性能を有する。
Claims (4)
- α−Al2O3基板上に直接、又は他の層を介して形成されたα−(AlxGa1−x)2O3単結晶(0≦x<1)からなるα−(AlxGa1−x)2O3単結晶膜と、
前記α−(AlxGa1−x)2O3単結晶膜上に形成されたソース電極及びドレイン電極と、
前記α−(AlxGa1−x)2O3単結晶膜中に形成され、前記ソース電極及び前記ドレイン電極にそれぞれ接続された第1のコンタクト領域及び第2のコンタクト領域と、
前記α−(AlxGa1−x)2O3単結晶膜の前記第1のコンタクト領域と前記第2のコンタクト領域との間の領域上にゲート絶縁膜を介して形成されたゲート電極と、
を含み、前記α−(Al x Ga 1−x ) 2 O 3 単結晶膜がチャネル層として用いられる、Ga2O3系半導体素子。 - 前記α−(AlxGa1−x)2O3単結晶膜、第1のコンタクト領域、及び第2のコンタクト領域はn型であり、
前記α−(AlxGa1−x)2O3単結晶膜中の第1のコンタクト領域を囲むp型又は高抵抗のボディ領域を含む、
請求項1に記載のGa2O3系半導体素子。 - 前記α−(AlxGa1−x)2O3単結晶膜は、ドーパントを含まない高抵抗の領域であり、
第1のコンタクト領域、及び第2のコンタクト領域はn型である、
請求項1に記載のGa2O3系半導体素子。 - 前記α−(AlxGa1−x)2O3単結晶膜はp型であり、
第1のコンタクト領域、及び第2のコンタクト領域はn型である、
請求項1に記載のGa2O3系半導体素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011196437 | 2011-09-08 | ||
JP2011196437 | 2011-09-08 | ||
PCT/JP2012/072899 WO2013035843A1 (ja) | 2011-09-08 | 2012-09-07 | Ga2O3系半導体素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2013035843A1 JPWO2013035843A1 (ja) | 2015-03-23 |
JP6142358B2 true JP6142358B2 (ja) | 2017-06-07 |
Family
ID=47832282
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013532671A Active JP6142358B2 (ja) | 2011-09-08 | 2012-09-07 | Ga2O3系半導体素子 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20140217470A1 (ja) |
JP (1) | JP6142358B2 (ja) |
WO (1) | WO2013035843A1 (ja) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5343224B1 (ja) * | 2012-09-28 | 2013-11-13 | Roca株式会社 | 半導体装置および結晶 |
JP6142357B2 (ja) | 2013-03-01 | 2017-06-07 | 株式会社タムラ製作所 | Ga2O3系単結晶体のドナー濃度制御方法、及びオーミックコンタクト形成方法 |
JP6284140B2 (ja) * | 2013-06-17 | 2018-02-28 | 株式会社タムラ製作所 | Ga2O3系半導体素子 |
JP5397795B1 (ja) * | 2013-06-21 | 2014-01-22 | Roca株式会社 | 半導体装置及びその製造方法、結晶及びその製造方法 |
US9966439B2 (en) * | 2013-07-09 | 2018-05-08 | Flosfia Inc. | Semiconductor device and manufacturing method for same, crystal, and manufacturing method for same |
JP6152514B2 (ja) * | 2013-10-17 | 2017-06-28 | 株式会社Flosfia | 半導体装置及びその製造方法、並びに結晶及びその製造方法 |
JP6547273B2 (ja) * | 2013-12-26 | 2019-07-24 | 株式会社リコー | p型酸化物半導体、p型酸化物半導体製造用組成物、p型酸化物半導体の製造方法、半導体素子、表示素子、画像表示装置、及びシステム |
EP2933825B1 (en) | 2014-03-31 | 2017-07-05 | Flosfia Inc. | Crystalline multilayer structure and semiconductor device |
US10109707B2 (en) * | 2014-03-31 | 2018-10-23 | Flosfia Inc. | Crystalline multilayer oxide thin films structure in semiconductor device |
EP2942803B1 (en) * | 2014-05-08 | 2019-08-21 | Flosfia Inc. | Crystalline multilayer structure and semiconductor device |
JP6158757B2 (ja) * | 2014-06-25 | 2017-07-05 | 日本電信電話株式会社 | 酸化ガリウム結晶膜形成方法 |
JP6651714B2 (ja) * | 2014-07-11 | 2020-02-19 | 株式会社リコー | n型酸化物半導体製造用塗布液、電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
CN110804728A (zh) * | 2014-07-22 | 2020-02-18 | 株式会社Flosfia | 结晶性半导体膜和板状体以及半导体装置 |
JP5907465B2 (ja) | 2014-08-29 | 2016-04-26 | 株式会社タムラ製作所 | 半導体素子及び結晶積層構造体 |
JP5828568B1 (ja) | 2014-08-29 | 2015-12-09 | 株式会社タムラ製作所 | 半導体素子及びその製造方法 |
JP7344426B2 (ja) * | 2014-11-26 | 2023-09-14 | 株式会社Flosfia | 結晶性積層構造体 |
JP6980183B2 (ja) * | 2015-02-25 | 2021-12-15 | 株式会社Flosfia | 結晶性酸化物半導体膜、半導体装置 |
JP6876895B2 (ja) * | 2015-02-25 | 2021-05-26 | 株式会社Flosfia | 結晶性酸化物半導体膜、半導体装置 |
JP2016157879A (ja) * | 2015-02-25 | 2016-09-01 | 株式会社Flosfia | 結晶性酸化物半導体膜、半導体装置 |
JP6967213B2 (ja) * | 2015-04-10 | 2021-11-17 | 株式会社Flosfia | 結晶性酸化物半導体膜および半導体装置 |
JP6945121B2 (ja) * | 2015-09-30 | 2021-10-06 | 株式会社Flosfia | 結晶性半導体膜および半導体装置 |
US10804362B2 (en) * | 2016-08-31 | 2020-10-13 | Flosfia Inc. | Crystalline oxide semiconductor film, crystalline oxide semiconductor device, and crystalline oxide semiconductor system |
JP6951715B2 (ja) * | 2016-09-15 | 2021-10-20 | 株式会社Flosfia | 半導体膜の製造方法及び半導体膜並びにドーピング用錯化合物及びドーピング方法 |
EP3536828A4 (en) * | 2016-11-07 | 2020-07-15 | Flosfia Inc. | CRYSTALLINE OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE |
JP7008293B2 (ja) * | 2017-04-27 | 2022-01-25 | 国立研究開発法人情報通信研究機構 | Ga2O3系半導体素子 |
CN107331607B (zh) * | 2017-06-27 | 2020-06-26 | 中国科学院微电子研究所 | 一种氧化镓基底场效应晶体管及其制备方法 |
JP7166522B2 (ja) * | 2017-08-21 | 2022-11-08 | 株式会社Flosfia | 結晶膜の製造方法 |
JP7248961B2 (ja) | 2017-08-24 | 2023-03-30 | 株式会社Flosfia | 半導体装置 |
JP7248962B2 (ja) | 2017-08-24 | 2023-03-30 | 株式会社Flosfia | 半導体装置 |
CN112334606A (zh) * | 2018-06-26 | 2021-02-05 | 株式会社Flosfia | 结晶性氧化物膜 |
TW202006945A (zh) * | 2018-07-12 | 2020-02-01 | 日商Flosfia股份有限公司 | 半導體裝置和半導體系統 |
TW202013735A (zh) * | 2018-07-12 | 2020-04-01 | 日商Flosfia股份有限公司 | 半導體裝置和半導體系統 |
TW202013716A (zh) * | 2018-07-12 | 2020-04-01 | 日商Flosfia股份有限公司 | 半導體裝置和半導體系統 |
CN110880529A (zh) * | 2018-09-05 | 2020-03-13 | 财团法人工业技术研究院 | 半导体元件及其制造方法 |
JP7315136B2 (ja) * | 2018-12-26 | 2023-07-26 | 株式会社Flosfia | 結晶性酸化物半導体 |
WO2021044644A1 (ja) * | 2019-09-02 | 2021-03-11 | 株式会社デンソー | 成膜方法、及び、半導体装置の製造方法 |
JP7289357B2 (ja) | 2019-09-02 | 2023-06-09 | 日本碍子株式会社 | 半導体膜 |
JP7016489B2 (ja) * | 2019-12-16 | 2022-02-07 | 株式会社Flosfia | 結晶性酸化物半導体膜、半導体装置 |
KR102201924B1 (ko) * | 2020-08-13 | 2021-01-11 | 한국세라믹기술원 | 도펀트 활성화 기술을 이용한 전력반도체용 갈륨옥사이드 박막 제조 방법 |
JPWO2022124404A1 (ja) | 2020-12-11 | 2022-06-16 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4199774A (en) * | 1978-09-18 | 1980-04-22 | The Board Of Trustees Of The Leland Stanford Junior University | Monolithic semiconductor switching device |
US4968637A (en) * | 1989-05-31 | 1990-11-06 | Raytheon Company | Method of manufacture TiW alignment mark and implant mask |
JP3401918B2 (ja) * | 1994-07-04 | 2003-04-28 | 株式会社デンソー | 半導体装置 |
GB2331841A (en) * | 1997-11-28 | 1999-06-02 | Secr Defence | Field effect transistor |
JP2000216392A (ja) * | 1999-01-26 | 2000-08-04 | Matsushita Electric Works Ltd | 半導体装置およびその製造方法 |
US6949423B1 (en) * | 2003-11-26 | 2005-09-27 | Oakvale Technology | MOSFET-fused nonvolatile read-only memory cell (MOFROM) |
JP2005223274A (ja) * | 2004-02-09 | 2005-08-18 | Advanced Lcd Technologies Development Center Co Ltd | 薄膜半導体素子 |
JP4297196B2 (ja) * | 2008-10-03 | 2009-07-15 | カシオ計算機株式会社 | Cmosトランジスタ |
WO2011013364A1 (ja) * | 2009-07-28 | 2011-02-03 | パナソニック株式会社 | 半導体素子の製造方法 |
-
2012
- 2012-09-07 WO PCT/JP2012/072899 patent/WO2013035843A1/ja active Application Filing
- 2012-09-07 JP JP2013532671A patent/JP6142358B2/ja active Active
- 2012-09-07 US US14/343,652 patent/US20140217470A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20140217470A1 (en) | 2014-08-07 |
WO2013035843A1 (ja) | 2013-03-14 |
JPWO2013035843A1 (ja) | 2015-03-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6142358B2 (ja) | Ga2O3系半導体素子 | |
JP5948581B2 (ja) | Ga2O3系半導体素子 | |
JP6108366B2 (ja) | Ga2O3系半導体素子 | |
JP5807282B2 (ja) | Ga2O3系半導体素子 | |
JP5975466B2 (ja) | Ga2O3系半導体素子 | |
JP5952360B2 (ja) | Ga含有酸化物層成長用β−Ga2O3系単結晶基板 | |
JP3811624B2 (ja) | 半導体装置 | |
WO2013035841A1 (ja) | Ga2O3系HEMT | |
JP6216978B2 (ja) | Ga2O3系半導体素子 | |
JP2013056804A (ja) | β−Ga2O3系単結晶膜の製造方法及び結晶積層構造体 | |
Sasaki et al. | Ga 2 O 3 semiconductor element |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150904 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20150904 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160607 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160728 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161227 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170321 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170413 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6142358 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |