JP6284140B2 - Ga2O3系半導体素子 - Google Patents
Ga2O3系半導体素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 29
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 title 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 184
- 239000013078 crystal Substances 0.000 claims description 100
- 238000002161 passivation Methods 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 24
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 8
- 238000000034 method Methods 0.000 description 33
- 239000008186 active pharmaceutical agent Substances 0.000 description 21
- 239000002019 doping agent Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 238000001451 molecular beam epitaxy Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 229910052745 lead Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052730 francium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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Description
第1の実施の形態は、Ga2O3系半導体素子としてのプレーナゲート構造を有するGa2O3系MISFET(Metal Insulator Semiconductor Field Effect Transistor)についての形態である。
図1は、第1の実施の形態に係るGa2O3系MISFETの垂直断面図である。Ga2O3系MISFET10は、高抵抗β−Ga2O3基板2上に形成されたβ−Ga2O3単結晶層3と、β−Ga2O3単結晶層3上に形成されたソース電極12及びドレイン電極13と、ソース電極12とドレイン電極13との間のβ−Ga2O3単結晶層3上に絶縁膜16を介して形成されたゲート電極11と、β−Ga2O3単結晶層3中のソース電極12及びドレイン電極13の下にそれぞれ形成されたソース領域14及びドレイン領域15を含む。
図2(a)〜(e)は、第1の実施の形態に係るGa2O3系MISFETの製造工程を表す垂直断面図である。
以下に、β−Ga2O3単結晶膜を成長させた後でイオン注入法によりn型ドーパントを注入する方法(以下、第1の方法と呼ぶ)によりβ−Ga2O3単結晶層3を形成した場合、及びn型ドーパントを含んだβ−Ga2O3単結晶膜をエピタキシャル成長させる方法(以下、第2の方法と呼ぶ)によりβ−Ga2O3単結晶層3を形成した場合の、Ga2O3系MISFET10のIDS−VDS特性及びIDS−VGS特性を示す。
第2の実施の形態は、ゲート絶縁膜とパッシベーション膜が、それぞれ独立して形成される点で第1の実施の形態と異なる。なお、第1の実施の形態と同様の点については、説明を省略又は簡略化する。
第3の実施の形態は、Ga2O3系半導体素子がゲート絶縁膜を含まないGa2O3系MESFETである点で第2の実施の形態と異なる。なお、第2の実施の形態と同様の点については、説明を省略又は簡略化する。
上記第1〜3の実施の形態によれば、高抵抗のβ−Ga2O3基板と、酸化物絶縁体からなるパッシベーション膜とを組み合わせて用いることにより、リーク電流を顕著に減少させ、オンオフ比を顕著に向上させることができる。また、上記第1〜3の実施のトランジスタは、リーク電流の発生が抑えられるためにエネルギー効率が高く、省エネルギーを実現している。
Claims (6)
- β−Ga2O3基板上に形成されたβ−Ga2O3単結晶層と、
前記β−Ga2O3単結晶層上に形成されたソース電極及びドレイン電極と、
前記β−Ga2O3単結晶層上の前記ソース電極と前記ドレイン電極との間に形成されたゲート電極と、
前記β−Ga2O3単結晶層の表面の前記ソース電極と前記ゲート電極との間の領域及び前記ゲート電極と前記ドレイン電極との間の領域を覆う、(Al x Ga 1−x ) 2 O 3 (0<x≦1)を主成分とするパッシベーション膜と、
を有するGa2O3系半導体素子。 - 前記ゲート電極は、ゲート絶縁膜を介して前記β−Ga2O3単結晶層上に形成される、
請求項1に記載のGa2O3系半導体素子。 - 前記パッシベーション膜と前記ゲート絶縁膜は、同じ材料からなり、一体に形成される、
請求項2に記載のGa2O3系半導体素子。 - 前記ゲート電極は、前記β−Ga2O3単結晶層上に直接形成される、
請求項1に記載のGa2O3系半導体素子。 - 前記パッシベーション膜は、Al2O3を主成分とする、
請求項1〜4のいずれか1項に記載のGa2O3系半導体素子。 - 前記パッシベーション膜は、前記ソース電極及び前記ドレイン電極に接触する、
請求項1〜5のいずれか1項に記載のGa2O3系半導体素子。
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JP2013126849A JP6284140B2 (ja) | 2013-06-17 | 2013-06-17 | Ga2O3系半導体素子 |
PCT/JP2014/061798 WO2014203623A1 (ja) | 2013-06-17 | 2014-04-25 | Ga2O3系半導体素子 |
US14/898,529 US20160141372A1 (en) | 2013-06-17 | 2014-04-25 | Ga2O3 SEMICONDUCTOR ELEMENT |
TW103115728A TWI634665B (zh) | 2013-06-17 | 2014-05-01 | Ga 2 O 3 Semiconductor component |
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US9349806B2 (en) * | 2014-07-09 | 2016-05-24 | Taiwan Semiconductor Manufacturing Company Limited and National Chiao-Tung University | Semiconductor structure with template for transition metal dichalcogenides channel material growth |
JP2016157874A (ja) * | 2015-02-25 | 2016-09-01 | 国立研究開発法人情報通信研究機構 | 半導体積層構造体及びその製造方法、並びに半導体素子及びその製造方法 |
KR102426781B1 (ko) * | 2016-01-07 | 2022-07-28 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 및 이를 구비한 발광 모듈 |
US20180026055A1 (en) * | 2016-07-19 | 2018-01-25 | Applied Materials, Inc. | Hybrid high-k dielectric material film stacks comprising zirconium oxide utilized in display devices |
CN106876466B (zh) * | 2017-02-16 | 2020-11-13 | 大连理工大学 | 一种氧化镓基金属-氧化物半导体场效应晶体管及其制备方法 |
US10777644B2 (en) * | 2017-04-27 | 2020-09-15 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Heterojunction devices and methods for fabricating the same |
JP7008293B2 (ja) * | 2017-04-27 | 2022-01-25 | 国立研究開発法人情報通信研究機構 | Ga2O3系半導体素子 |
CN107331607B (zh) * | 2017-06-27 | 2020-06-26 | 中国科学院微电子研究所 | 一种氧化镓基底场效应晶体管及其制备方法 |
CN107464844A (zh) * | 2017-07-20 | 2017-12-12 | 中国电子科技集团公司第十三研究所 | 氧化镓场效应晶体管的制备方法 |
TW202013716A (zh) * | 2018-07-12 | 2020-04-01 | 日商Flosfia股份有限公司 | 半導體裝置和半導體系統 |
CN110571275A (zh) * | 2019-09-17 | 2019-12-13 | 中国科学技术大学 | 氧化镓mosfet的制备方法 |
WO2021106809A1 (ja) * | 2019-11-29 | 2021-06-03 | 株式会社Flosfia | 半導体装置および半導体装置を有する半導体システム |
CN111987169B (zh) * | 2020-08-28 | 2022-03-04 | 西安电子科技大学 | 基于二维氧化镓薄膜的晶体管及制备方法 |
CN112382664A (zh) * | 2020-11-03 | 2021-02-19 | 广东省科学院半导体研究所 | 一种倒装mosfet器件及其制作方法 |
CN113223929A (zh) * | 2021-04-16 | 2021-08-06 | 西安电子科技大学 | 基于非平衡激光等离子体的氧化镓高效掺杂方法 |
CN113421914B (zh) * | 2021-06-22 | 2022-09-20 | 西安电子科技大学 | p型金属氧化物电流阻挡层Ga2O3垂直金属氧化物半导体场效应晶体管 |
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- 2014-04-25 US US14/898,529 patent/US20160141372A1/en not_active Abandoned
- 2014-04-25 WO PCT/JP2014/061798 patent/WO2014203623A1/ja active Application Filing
- 2014-05-01 TW TW103115728A patent/TWI634665B/zh active
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TW201511278A (zh) | 2015-03-16 |
JP2015002293A (ja) | 2015-01-05 |
US20160141372A1 (en) | 2016-05-19 |
TWI634665B (zh) | 2018-09-01 |
WO2014203623A1 (ja) | 2014-12-24 |
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