JP6108366B2 - Ga2O3系半導体素子 - Google Patents
Ga2O3系半導体素子 Download PDFInfo
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- JP6108366B2 JP6108366B2 JP2015166425A JP2015166425A JP6108366B2 JP 6108366 B2 JP6108366 B2 JP 6108366B2 JP 2015166425 A JP2015166425 A JP 2015166425A JP 2015166425 A JP2015166425 A JP 2015166425A JP 6108366 B2 JP6108366 B2 JP 6108366B2
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- 239000004065 semiconductor Substances 0.000 title claims description 31
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 title 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 220
- 239000013078 crystal Substances 0.000 claims description 144
- 239000000758 substrate Substances 0.000 claims description 60
- 239000002019 doping agent Substances 0.000 claims description 34
- 210000000746 body region Anatomy 0.000 claims description 15
- 239000010408 film Substances 0.000 description 130
- 238000000034 method Methods 0.000 description 23
- 238000002513 implantation Methods 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 10
- 229910052748 manganese Inorganic materials 0.000 description 10
- 238000001451 molecular beam epitaxy Methods 0.000 description 10
- 229910052719 titanium Inorganic materials 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 7
- 229910052745 lead Inorganic materials 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 229910052787 antimony Inorganic materials 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 6
- 229910052794 bromium Inorganic materials 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 229910052801 chlorine Inorganic materials 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910052735 hafnium Inorganic materials 0.000 description 6
- 229910052741 iridium Inorganic materials 0.000 description 6
- 229910052758 niobium Inorganic materials 0.000 description 6
- 229910052703 rhodium Inorganic materials 0.000 description 6
- 229910052707 ruthenium Inorganic materials 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- 229910052720 vanadium Inorganic materials 0.000 description 6
- 229910052726 zirconium Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910052790 beryllium Inorganic materials 0.000 description 4
- 229910052793 cadmium Inorganic materials 0.000 description 4
- 229910052792 caesium Inorganic materials 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910052730 francium Inorganic materials 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 229910052700 potassium Inorganic materials 0.000 description 4
- 238000004549 pulsed laser deposition Methods 0.000 description 4
- 229910052701 rubidium Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910020630 Co Ni Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 2
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- BGPPUXMKKQMWLV-UHFFFAOYSA-N 1,2,4,5-tetrachloro-3-methoxy-6-nitrobenzene Chemical compound COC1=C(Cl)C(Cl)=C([N+]([O-])=O)C(Cl)=C1Cl BGPPUXMKKQMWLV-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 1
- -1 ITO Chemical class 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 101100480797 Trypanosoma cruzi TCNA gene Proteins 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Description
第1の実施の形態では、Ga2O3系半導体素子としてのプレーナゲート構造を有するGa2O3系MISFET(Metal Insulator Semiconductor Field Effect Transistor)について説明する。
図1は、第1の実施の形態に係るGa2O3系MISFET20の断面図である。Ga2O3系MISFET20は、n型β−Ga2O3基板2上に形成されたn型β−Ga2O3単結晶膜3と、n型β−Ga2O3単結晶膜3上に形成されたソース電極22a、22bと、n型β−Ga2O3単結晶膜3上のソース電極22a、22bの間の領域にゲート絶縁膜26を介して形成されたゲート電極21と、n型β−Ga2O3単結晶膜3中のソース電極22a、22bの下にそれぞれ形成されたn型のコンタクト領域23a、23bと、コンタクト領域23a、23bをそれぞれ囲むp型のボディ領域24a、24bと、n型β−Ga2O3基板2のn型β−Ga2O3単結晶膜3と反対側の面上に形成されたドレイン電極25と、を含む。
β−Ga2O3系単結晶膜の製造方法としては、PLD(Pulsed Laser Deposition)法、CVD(Chemical Vapor Deposition)法、スパッタリング法、分子線エピタキシー(MBE;Molecular Beam Epitaxy)法等があるが、本実施の形態では、MBE法を用いた薄膜成長法を採用する。MBE法は、単体あるいは化合物の固体をセルと呼ばれる蒸発源で加熱し、加熱により生成された蒸気を分子線として基板表面に供給する結晶成長方法である。
第2の実施の形態では、Ga2O3系半導体素子としてのトレンチゲート構造を有するGa2O3系MISFETについて説明する。
図4は、第2の実施の形態に係るGa2O3系MISFET30の断面図である。Ga2O3系MISFET30は、n型β−Ga2O3基板2上に形成されたn型β−Ga2O3単結晶膜3と、n型β−Ga2O3単結晶膜3上に形成されたアンドープβ−Ga2O3単結晶膜6と、ゲート絶縁膜36に覆われてアンドープβ−Ga2O3単結晶膜6中に埋め込まれたゲート電極31と、アンドープβ−Ga2O3単結晶膜6中のゲート電極31の両側にそれぞれ形成されたコンタクト領域33a、33bと、アンドープβ−Ga2O3単結晶膜6上に形成され、コンタクト領域33a、33bに接続されたソース電極32と、n型β−Ga2O3基板2のn型β−Ga2O3単結晶膜3と反対側の面上に形成されたドレイン電極35と、を含む。
まず、第1の実施の形態と同様の工程を経て、n型β−Ga2O3基板2及びn型β−Ga2O3単結晶膜3を形成する。
第3の実施の形態は、アンドープβ−Ga2O3単結晶膜6の代わりにp型β−Ga2O3単結晶膜が形成される点において第2の実施の形態と異なる。第2の実施の形態と同様の点については、説明を省略又は簡略化する。
図5は、第3の実施の形態に係るGa2O3系MISFET40の断面図である。Ga2O3系MISFET40は、n型β−Ga2O3基板2上に形成されたn型β−Ga2O3単結晶膜3と、n型β−Ga2O3単結晶膜3上に形成されたp型β−Ga2O3単結晶膜7と、ゲート絶縁膜に覆われてp型β−Ga2O3単結晶膜7中に埋め込まれたゲート電極31と、p型β−Ga2O3単結晶膜7中のゲート電極31の両側にそれぞれ形成されたコンタクト領域33a、33bと、p型β−Ga2O3単結晶膜7上に形成され、コンタクト領域33a、33bに接続されたソース電極32と、n型β−Ga2O3基板2のn型β−Ga2O3単結晶膜3と反対側の面上に形成されたドレイン電極35と、を含む。
本実施の形態によれば、ホモエピタキシャル成長法を用いて高品質なβ−Ga2O3単結晶膜を形成し、そのβ−Ga2O3単結晶膜を用いて、高品質のGa2O3系半導体素子を形成することができる。また、これらのGa2O3系半導体素子は、高品質なβ−Ga2O3単結晶膜をチャネル層として用いるため、優れた動作性能を有する。
Claims (4)
- 第1の導電型を有し、(100)面から50°以上90°以下の角度だけ回転させた面を主面とするβ−Ga2O3基板と、
前記β−Ga2O3基板上に直接または他の膜を介して形成されたβ−Ga2O3単結晶膜と、
前記β−Ga2O3単結晶膜上に形成されたソース電極と、
前記β−Ga2O3基板の前記β−Ga2O3単結晶膜と反対側の面上に形成されたドレイン電極と、
前記β−Ga2O3単結晶膜中に形成され、前記ソース電極が接続された、前記第1の導電型を有するコンタクト領域と、
前記β−Ga2O3単結晶膜上に第1のゲート絶縁膜を介して形成された、又は第2のゲート絶縁膜に覆われて前記β−Ga 2 O 3 単結晶膜中に埋め込まれたゲート電極と、
を含み、
前記ゲート電極が前記β−Ga 2 O 3 単結晶膜上に前記第1のゲート絶縁膜を介して形成されている場合、前記β−Ga 2 O 3 単結晶膜が前記第1の導電型を有し、かつ前記コンタクト領域を囲むボディ領域を有し、前記ゲート電極に閾値以上の電圧を印加すると、前記ボディ領域の前記ゲート電極下の領域にチャネルが形成され、前記ソース電極から前記ドレイン電極へ電流が流れるようになり、
前記ゲート電極が前記第2のゲート絶縁膜に覆われて前記β−Ga 2 O 3 単結晶膜中に埋め込まれている場合、前記ゲート電極に閾値以上の電圧を印加すると、前記β−Ga 2 O 3 単結晶膜中の前記ゲート電極の両側の領域にチャネルが形成され、前記ソース電極から前記ドレイン電極へ電流が流れるようになる、
Ga2O3系半導体素子。 - 前記ソース電極は第1及び第2のソース電極を含み、
前記ゲート電極は、前記β−Ga2O3単結晶膜上の前記第1のソース電極と前記第2のソース電極との間の領域に前記第1のゲート絶縁膜を介して形成され、
前記コンタクト領域は、前記第1及び第2のソース電極がそれぞれ接続される第1及び第2のコンタクト領域を含み、
前記ボディ領域は、前記第1及び第2のコンタクト領域をそれぞれ囲む、前記第1の導電型と異なる第2の導電型又は高抵抗の第1及び第2のボディ領域を含む、
請求項1に記載のGa2O3系半導体素子。 - 前記β−Ga2O3単結晶膜は、前記β−Ga2O3基板上に前記第1の導電型を有する他のβ−Ga2O3単結晶膜を介して形成され、
前記β−Ga2O3単結晶膜は、前記第1の導電型と異なる第2の導電型を有するか、又はドーパントを含まず、
前記ゲート電極は、前記第2のゲート絶縁膜に覆われて前記β−Ga 2 O 3 単結晶膜中に埋め込まれ、
前記コンタクト領域は、前記ゲート電極の両側にそれぞれ位置する第1及び第2のコンタクト領域を含む、
請求項1に記載のGa2O3系半導体素子。 - 前記第1及び第2の導電型は、それぞれn型及びp型である、
請求項1〜3のいずれか1項に記載のGa2O3系半導体素子。
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2012
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- 2012-09-07 JP JP2013532673A patent/JP6066210B2/ja active Active
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Publication number | Publication date |
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US20140217405A1 (en) | 2014-08-07 |
CN103765593A (zh) | 2014-04-30 |
JP6066210B2 (ja) | 2017-01-25 |
US20160365418A1 (en) | 2016-12-15 |
WO2013035845A1 (ja) | 2013-03-14 |
CN103765593B (zh) | 2017-06-09 |
US9461124B2 (en) | 2016-10-04 |
EP2765610B1 (en) | 2018-12-26 |
EP2765610A1 (en) | 2014-08-13 |
EP2765610A4 (en) | 2015-05-06 |
JP2016015503A (ja) | 2016-01-28 |
JPWO2013035845A1 (ja) | 2015-03-23 |
US20180350967A1 (en) | 2018-12-06 |
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