JP5788925B2 - β−Ga2O3系単結晶の成長方法 - Google Patents
β−Ga2O3系単結晶の成長方法 Download PDFInfo
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- JP5788925B2 JP5788925B2 JP2013078575A JP2013078575A JP5788925B2 JP 5788925 B2 JP5788925 B2 JP 5788925B2 JP 2013078575 A JP2013078575 A JP 2013078575A JP 2013078575 A JP2013078575 A JP 2013078575A JP 5788925 B2 JP5788925 B2 JP 5788925B2
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
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- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
本実施の形態においては、種結晶を用いて、Snが添加された平板状のβ−Ga2O3系単結晶をb軸方向に成長させる。これにより、b軸方向に垂直な方向の結晶品質のばらつきが小さいβ−Ga2O3系単結晶を得ることができる。
以下に、平板状のβ−Ga2O3系単結晶を成長させる方法の一例として、EFG(Edge-defined film-fed growth)法を用いる場合の方法について説明する。なお、本実施の形態の平板状のβ−Ga2O3系単結晶の成長方法はEFG法に限られず、他の成長方法、例えば、マイクロPD(pulling-down)法等の引き下げ法を用いてもよい。また、ブリッジマン法にEFG法のダイのようなスリットを有するダイを適用し、平板状のβ−Ga2O3系単結晶を育成してもよい。
上記の方法等を用いて成長させたβ−Ga2O3系単結晶の種結晶から基板を切り出し、鏡面研磨した後、X線回折測定により結晶品質の評価を行う。この結晶品質の評価は、基板のb軸に垂直な方向の結晶構造のばらつきの評価により行う。
本実施の形態の一例として、濃度0.05mol%のSnを添加して主面が(−201)面の平板状のβ−Ga2O3系単結晶を2つ成長させ(結晶A、Bとする)、これら結晶A、Bから、種結晶からの位置が40mmの点を中心とする基板と、種結晶からの位置が90mmの点を中心とする基板をそれぞれ1枚ずつ切り出した。各基板の直径は50mmとした。
本実施の形態によれば、β−Ga2O3系単結晶に導電性を与えるドーパントとしてSnを用いることにより、結晶構造のばらつきが小さい高品質のβ−Ga2O3系単結晶をb軸方向に成長させることができる。
Claims (1)
- 種結晶を用いて、Snが添加された平板状のβ−Ga2O3系単結晶をb軸方向に成長させる工程を含む、
β−Ga2O3系単結晶の成長方法であって、
EFG法により前記種結晶との間で肩広げを行わないで前記β−Ga 2 O 3 系単結晶を成長させ、
前記β−Ga 2 O 3 系単結晶への前記Snの添加濃度が0.005mol%以上かつ1.0mol%以下である、
β−Ga 2 O 3 系単結晶の成長方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013078575A JP5788925B2 (ja) | 2013-04-04 | 2013-04-04 | β−Ga2O3系単結晶の成長方法 |
CN201480020148.XA CN105102694A (zh) | 2013-04-04 | 2014-03-31 | β-Ga2O3系单晶的生长方法 |
EP14779805.2A EP2990509B1 (en) | 2013-04-04 | 2014-03-31 | Method for growing beta-ga2o3-based single crystal |
PCT/JP2014/059572 WO2014163056A1 (ja) | 2013-04-04 | 2014-03-31 | β-Ga2O3系単結晶の成長方法 |
US14/782,039 US10526721B2 (en) | 2013-04-04 | 2014-03-31 | Method for growing β-GA2O3-based single crystal |
TW103112566A TWI634241B (zh) | 2013-04-04 | 2014-04-03 | β-GaO系單晶的成長方法 |
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JP2013078575A JP5788925B2 (ja) | 2013-04-04 | 2013-04-04 | β−Ga2O3系単結晶の成長方法 |
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JP2014131332A Division JP2014205618A (ja) | 2014-06-26 | 2014-06-26 | β−Ga2O3系単結晶及び基板 |
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JP2014201480A JP2014201480A (ja) | 2014-10-27 |
JP5788925B2 true JP5788925B2 (ja) | 2015-10-07 |
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US (1) | US10526721B2 (ja) |
EP (1) | EP2990509B1 (ja) |
JP (1) | JP5788925B2 (ja) |
CN (1) | CN105102694A (ja) |
TW (1) | TWI634241B (ja) |
WO (1) | WO2014163056A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20230101984A (ko) * | 2021-12-29 | 2023-07-07 | 한국세라믹기술원 | Efg용 잉곳 성장장치 |
WO2024078704A1 (en) | 2022-10-11 | 2024-04-18 | Forschungsverbund Berlin E.V. | MELT-GROWN BULK ß-(AlxGa1-x)2O3 SINGLE CRYSTALS AND METHOD FOR PRODUCING BULK ß-(AlxGA1-x)2O3 SINGLE CRYSTALS |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5865867B2 (ja) * | 2013-05-13 | 2016-02-17 | 株式会社タムラ製作所 | β−Ga2O3系単結晶の育成方法、並びにβ−Ga2O3系単結晶基板の製造方法 |
CN107541776A (zh) * | 2017-08-14 | 2018-01-05 | 同济大学 | 一种大尺寸氧化镓单晶的生长设备及方法 |
JP7222669B2 (ja) * | 2018-11-16 | 2023-02-15 | 株式会社タムラ製作所 | 単結晶育成方法、種結晶、及び単結晶 |
JP2022147882A (ja) * | 2021-03-24 | 2022-10-06 | アダマンド並木精密宝石株式会社 | Ga2O3系単結晶基板と、Ga2O3系単結晶基板の製造方法 |
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JP4083396B2 (ja) | 2000-07-10 | 2008-04-30 | 独立行政法人科学技術振興機構 | 紫外透明導電膜とその製造方法 |
JP3679097B2 (ja) * | 2002-05-31 | 2005-08-03 | 株式会社光波 | 発光素子 |
JP4630986B2 (ja) * | 2003-02-24 | 2011-02-09 | 学校法人早稲田大学 | β−Ga2O3系単結晶成長方法 |
CA2517024C (en) | 2003-02-24 | 2009-12-01 | Waseda University | .beta.-ga2o3 single crystal growing method, thin-film single crystal growing method, ga2o3 light-emitting device, and its manufacturing method |
JP2005235961A (ja) * | 2004-02-18 | 2005-09-02 | Univ Waseda | Ga2O3系単結晶の導電率制御方法 |
JP2006273684A (ja) * | 2005-03-30 | 2006-10-12 | Koha Co Ltd | Iii族酸化物系単結晶の製造方法 |
JP4611103B2 (ja) * | 2005-05-09 | 2011-01-12 | 株式会社光波 | β−Ga2O3結晶の製造方法 |
JP2008037725A (ja) * | 2006-08-10 | 2008-02-21 | Nippon Light Metal Co Ltd | 酸化ガリウム単結晶の製造方法 |
JP2008156141A (ja) * | 2006-12-21 | 2008-07-10 | Koha Co Ltd | 半導体基板及びその製造方法 |
JP5786179B2 (ja) | 2010-03-12 | 2015-09-30 | 並木精密宝石株式会社 | 酸化ガリウム単結晶及びその製造方法 |
WO2013035845A1 (ja) * | 2011-09-08 | 2013-03-14 | 株式会社タムラ製作所 | Ga2O3系半導体素子 |
JP5491483B2 (ja) * | 2011-11-15 | 2014-05-14 | 株式会社タムラ製作所 | β−Ga2O3系単結晶の成長方法 |
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2013
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2014
- 2014-03-31 US US14/782,039 patent/US10526721B2/en active Active
- 2014-03-31 WO PCT/JP2014/059572 patent/WO2014163056A1/ja active Application Filing
- 2014-03-31 CN CN201480020148.XA patent/CN105102694A/zh active Pending
- 2014-03-31 EP EP14779805.2A patent/EP2990509B1/en active Active
- 2014-04-03 TW TW103112566A patent/TWI634241B/zh active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20230101984A (ko) * | 2021-12-29 | 2023-07-07 | 한국세라믹기술원 | Efg용 잉곳 성장장치 |
KR102660564B1 (ko) * | 2021-12-29 | 2024-04-25 | 한국세라믹기술원 | Efg용 잉곳 성장장치 |
WO2024078704A1 (en) | 2022-10-11 | 2024-04-18 | Forschungsverbund Berlin E.V. | MELT-GROWN BULK ß-(AlxGa1-x)2O3 SINGLE CRYSTALS AND METHOD FOR PRODUCING BULK ß-(AlxGA1-x)2O3 SINGLE CRYSTALS |
Also Published As
Publication number | Publication date |
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EP2990509A4 (en) | 2017-01-18 |
US20160032485A1 (en) | 2016-02-04 |
CN105102694A (zh) | 2015-11-25 |
TWI634241B (zh) | 2018-09-01 |
TW201443301A (zh) | 2014-11-16 |
EP2990509A1 (en) | 2016-03-02 |
WO2014163056A1 (ja) | 2014-10-09 |
US10526721B2 (en) | 2020-01-07 |
EP2990509B1 (en) | 2019-12-18 |
JP2014201480A (ja) | 2014-10-27 |
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