JP6685476B2 - 酸化物半導体装置、および、酸化物半導体装置の製造方法 - Google Patents
酸化物半導体装置、および、酸化物半導体装置の製造方法 Download PDFInfo
- Publication number
- JP6685476B2 JP6685476B2 JP2019526762A JP2019526762A JP6685476B2 JP 6685476 B2 JP6685476 B2 JP 6685476B2 JP 2019526762 A JP2019526762 A JP 2019526762A JP 2019526762 A JP2019526762 A JP 2019526762A JP 6685476 B2 JP6685476 B2 JP 6685476B2
- Authority
- JP
- Japan
- Prior art keywords
- gallium oxide
- oxide semiconductor
- layer
- type
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 351
- 238000000034 method Methods 0.000 title claims description 47
- 238000004519 manufacturing process Methods 0.000 title claims description 42
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 318
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 317
- 239000000758 substrate Substances 0.000 claims description 116
- 239000000463 material Substances 0.000 claims description 90
- 125000005842 heteroatom Chemical group 0.000 claims description 35
- 239000012535 impurity Substances 0.000 claims description 27
- 229910044991 metal oxide Inorganic materials 0.000 claims description 9
- 150000004706 metal oxides Chemical class 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 453
- 230000015556 catabolic process Effects 0.000 description 23
- 239000007769 metal material Substances 0.000 description 16
- 238000009792 diffusion process Methods 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 14
- 125000004429 atom Chemical group 0.000 description 13
- 230000000694 effects Effects 0.000 description 13
- 239000010949 copper Substances 0.000 description 12
- 239000013078 crystal Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910000480 nickel oxide Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- -1 for example Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- LBJNMUFDOHXDFG-UHFFFAOYSA-N copper;hydrate Chemical compound O.[Cu].[Cu] LBJNMUFDOHXDFG-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- VFWRGKJLLYDFBY-UHFFFAOYSA-N silver;hydrate Chemical compound O.[Ag].[Ag] VFWRGKJLLYDFBY-UHFFFAOYSA-N 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
- H01L29/242—AIBVI or AIBVII compounds, e.g. Cu2O, Cu I
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02414—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Description
以下、本実施の形態に関する酸化物半導体装置、および、酸化物半導体装置の製造方法について説明する。
まず、本実施の形態に関する半導体装置の構成について説明をする。
次に、本実施の形態に関する半導体装置の製造方法について説明する。
本実施の形態に関する酸化物半導体装置、および、酸化物半導体装置の製造方法について説明する。以下の説明においては、以上に記載された実施の形態で説明された構成と同様の構成については同じ符号を付して図示し、その詳細な説明については適宜省略するものとする。
図3は、本実施の形態に関する半導体装置の構成を概略的に例示する断面図である。図3に例示される半導体装置は、第1の実施の形態に例示された態様とは、電流方向、すなわち、図3における上下方向と平行に伸びる誘電体層7aの長さが相違している。
本実施の形態に関する酸化物半導体装置、および、酸化物半導体装置の製造方法について説明する。以下の説明においては、以上に記載された実施の形態で説明された構成と同様の構成については同じ符号を付して図示し、その詳細な説明については適宜省略するものとする。
図4は、本実施の形態に関する半導体装置の構成を概略的に例示する断面図である。図4に例示される半導体装置は、第1の実施の形態に例示された態様とは、電流方向、すなわち、図4における上下方向と平行に伸びるp型酸化物半導体層5aの長さおよび誘電体層7aの長さが相違している。具体的には、p型酸化物半導体層5aは、n型酸化ガリウムエピタキシャル層2の上面から内部に達して形成される。また、誘電体層7aは、p型酸化物半導体層5aの側面全体を覆って形成される。ただし、p型酸化物半導体層5aと誘電体層7aのデバイスの電流方向と平行な方向における長さは同じである。
次に、本実施の形態に関する半導体装置の製造方法について、図5から図20を参照しつつ説明する。なお、図5から図20は、本実施の形態に関する半導体装置の製造工程を例示する断面図である。
本実施の形態に関する酸化物半導体装置、および、酸化物半導体装置の製造方法について説明する。以下の説明においては、以上に記載された実施の形態で説明された構成と同様の構成については同じ符号を付して図示し、その詳細な説明については適宜省略するものとする。
図21は、本実施の形態に関する半導体装置の構成を概略的に例示する断面図である。図21に例示される半導体装置は、第3の実施の形態に例示された態様とは、電流方向、すなわち、図21における上下方向と平行に伸びる誘電体層7bの長さが相違している。
次に、本実施の形態に関する半導体装置の動作について説明する。
本実施の形態に関する酸化物半導体装置、および、酸化物半導体装置の製造方法について説明する。以下の説明においては、以上に記載された実施の形態で説明された構成と同様の構成については同じ符号を付して図示し、その詳細な説明については適宜省略するものとする。
図22は、本実施の形態に関する半導体装置の構成を概略的に例示する断面図である。図22に例示される半導体装置は、図22における上下方向を電流方向とする、電界効果トランジスタである。
次に、以上に記載された実施の形態によって生じる効果を例示する。なお、以下の説明においては、以上に記載された実施の形態に例示された具体的な構成に基づいて当該効果が記載されるが、同様の効果が生じる範囲で、本願明細書に例示される他の具体的な構成と置き換えられてもよい。
以上に記載された実施の形態では、それぞれの構成要素の材質、材料、寸法、形状、相対的配置関係または実施の条件などについても記載する場合があるが、これらはすべての局面において例示であって、本願明細書に記載されたものに限られることはないものとする。
Claims (14)
- n型の酸化ガリウム基板(1)の上面に形成される、n型の酸化ガリウムエピタキシャル層(2)と、
前記酸化ガリウムエピタキシャル層(2)の上面から少なくとも内部に達して形成され、かつ、前記酸化ガリウムエピタキシャル層(2)の材料とは異なる材料の酸化物であるp型の酸化物半導体層(5、5a)と、
前記酸化物半導体層(5、5a)の側面を少なくとも一部覆って形成され、かつ、前記酸化物半導体層(5、5a)を構成する前記材料よりも誘電率の小さい材料によって構成される誘電体層(7、7a、7b)と、
前記酸化ガリウムエピタキシャル層(2)の上面に形成され、かつ、前記酸化ガリウムエピタキシャル層(2)とショットキー接合を形成するアノード電極(4)と、
前記酸化ガリウム基板(1)の下面に形成され、かつ、前記酸化ガリウム基板(1)とオーミック接合を形成するカソード電極(3)とを備え、
前記酸化物半導体層(5)の下面と前記酸化ガリウム基板(1)との間、または、前記酸化物半導体層(5a)の下面と前記酸化ガリウムエピタキシャル層(2)との間に、ヘテロpn接合が形成される、
酸化物半導体装置。 - 前記酸化物半導体層(5、5a)の側面は、前記アノード電極(4)と前記カソード電極(3)とを結ぶ方向である電流方向に沿う面である、
請求項1に記載の酸化物半導体装置。 - 前記誘電体層(7a、7b)の下面は、前記酸化物半導体層(5、5a)の下面よりも浅く位置する、
請求項1または請求項2に記載の酸化物半導体装置。 - 前記誘電体層(7、7a)は、前記酸化物半導体層(5、5a)の側面全体を覆って形成される、
請求項1または請求項2に記載の酸化物半導体装置。 - 前記酸化物半導体層(5a)は、前記酸化ガリウムエピタキシャル層(2)の上面から内部に達して形成され、
前記酸化物半導体層(5a)の下面と前記酸化ガリウムエピタキシャル層(2)との間に、ヘテロpn接合が形成される、
請求項1から請求項4のうちのいずれか1項に記載の酸化物半導体装置。 - 前記酸化物半導体層(5)は、前記酸化ガリウムエピタキシャル層(2)の上面から下面に達して形成され、
前記酸化物半導体層(5)の下面と前記酸化ガリウム基板(1)との間に、ヘテロpn接合が形成される、
請求項1から請求項4のうちのいずれか1項に記載の酸化物半導体装置。 - 前記酸化ガリウムエピタキシャル層(2)の不純物濃度が、前記酸化ガリウム基板(1)の不純物濃度よりも低い、
請求項1から請求項6のうちのいずれか1項に記載の酸化物半導体装置。 - 前記酸化物半導体層(5、5a)は、CuまたはNiを含む金属酸化物である、
請求項1から請求項7のうちのいずれか1項に記載の酸化物半導体装置。 - n型の酸化ガリウム基板(1)の下面に、前記酸化ガリウム基板(1)とオーミック接合するカソード電極(3)を形成し、
前記酸化ガリウム基板(1)の上面に、n型の酸化ガリウムエピタキシャル層(2)をエピタキシャル成長させ、
前記酸化ガリウムエピタキシャル層(2)の上面から少なくとも内部に達する溝部(10)を形成し、
前記溝部(10)の側面の少なくとも一部に誘電体層(7、7a、7b)を形成し、
前記誘電体層(7、7a、7b)が側面に形成された状態の前記溝部(10)内に、前記酸化ガリウムエピタキシャル層(2)の材料とは異なる材料の酸化物であり、かつ、前記誘電体層(7、7a、7b)よりも誘電率の高い材料によって構成されるp型の酸化物半導体層(5、5a)を形成し、
前記酸化ガリウムエピタキシャル層(2)の上面に、前記酸化ガリウムエピタキシャル層(2)とショットキー接合するアノード電極(4)を形成し、
前記酸化物半導体層(5)の下面と前記酸化ガリウム基板(1)との間、または、前記酸化物半導体層(5a)の下面と前記酸化ガリウムエピタキシャル層(2)との間に、ヘテロpn接合が形成される、
酸化物半導体装置の製造方法。 - 前記酸化物半導体層(5、5a)を、200℃以下の形成温度で形成する、
請求項9に記載の酸化物半導体装置の製造方法。 - 前記酸化ガリウムエピタキシャル層(2)の上面から内部に達する溝部(10)を形成し、
前記酸化物半導体層(5a)の下面と前記酸化ガリウムエピタキシャル層(2)との間に、ヘテロpn接合が形成される、
請求項9または請求項10に記載の酸化物半導体装置の製造方法。 - 前記酸化ガリウムエピタキシャル層(2)の上面から下面に達する溝部(10)を形成し、
前記酸化物半導体層(5)の下面と前記酸化ガリウム基板(1)との間に、ヘテロpn接合が形成される、
請求項9または請求項10に記載の酸化物半導体装置の製造方法。 - n型の酸化ガリウム基板(1)の下面に、前記酸化ガリウム基板(1)とオーミック接合するカソード電極(3)を形成し、
前記酸化ガリウム基板(1)の上面に、n型の第1の酸化ガリウムエピタキシャル層(2a)をエピタキシャル成長させ、
前記第1の酸化ガリウムエピタキシャル層(2a)の上面に、前記第1の酸化ガリウムエピタキシャル層(2a)の材料とは異なる材料の酸化物であるp型の酸化物半導体層(5a)を部分的に形成し、
前記酸化物半導体層(5a)の側面の少なくとも一部に、前記酸化物半導体層(5a)を構成する前記材料よりも誘電率の小さい材料によって構成される誘電体層(7、7a、7b)を形成し、
前記第1の酸化ガリウムエピタキシャル層(2a)、前記酸化物半導体層(5a)および前記誘電体層(7、7a、7b)を覆って、n型の第2の酸化ガリウムエピタキシャル層(2b)をエピタキシャル成長させ、
前記第2の酸化ガリウムエピタキシャル層(2b)の上面に、前記第2の酸化ガリウムエピタキシャル層(2b)とショットキー接合するアノード電極(4)を形成し、
前記酸化物半導体層(5a)の下面と前記第1の酸化ガリウムエピタキシャル層(2a)の上面との間に、ヘテロpn接合が形成される、
酸化物半導体装置の製造方法。 - n型の酸化ガリウム基板(1)の上面に形成される、n型の酸化ガリウムエピタキシャル層(2c)と、
前記酸化ガリウムエピタキシャル層(2c)の上面から少なくとも内部に達して形成され、かつ、前記酸化ガリウムエピタキシャル層(2c)の材料とは異なる材料の酸化物であるp型の酸化物半導体層(5c)と、
前記酸化物半導体層(5c)の側面を少なくとも一部覆って形成され、かつ、前記酸化物半導体層(5c)を構成する前記材料よりも誘電率の小さい材料によって構成される誘電体層(7c)と、
前記酸化ガリウムエピタキシャル層(2c)の上面に形成され、かつ、前記酸化ガリウムエピタキシャル層(2c)および前記酸化物半導体層(5c)と直接接合を形成するソース電極(11)と、
前記酸化ガリウムエピタキシャル層(2c)および前記酸化物半導体層(5c)と、前記誘電体層(7c)を介して接触するゲート電極(12)と、
前記酸化ガリウム基板(1)の下面に形成され、かつ、前記酸化ガリウム基板(1)と直接接合するドレイン電極(13)とを備え、
前記酸化ガリウムエピタキシャル層(2c)の下面と前記酸化ガリウム基板(1)との間に、ヘテロpn接合が形成される、
酸化物半導体装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017126931 | 2017-06-29 | ||
JP2017126931 | 2017-06-29 | ||
PCT/JP2018/022020 WO2019003861A1 (ja) | 2017-06-29 | 2018-06-08 | 酸化物半導体装置、および、酸化物半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2019003861A1 JPWO2019003861A1 (ja) | 2019-11-07 |
JP6685476B2 true JP6685476B2 (ja) | 2020-04-22 |
Family
ID=64741480
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019526762A Active JP6685476B2 (ja) | 2017-06-29 | 2018-06-08 | 酸化物半導体装置、および、酸化物半導体装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10971634B2 (ja) |
JP (1) | JP6685476B2 (ja) |
CN (1) | CN110809826B (ja) |
DE (1) | DE112018003362B4 (ja) |
WO (1) | WO2019003861A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023113536A1 (ko) * | 2021-12-16 | 2023-06-22 | 파워큐브세미 (주) | 산화니켈의 캐리어 농도 조절 방법 및 그 방법으로 제조된 쇼트키 다이오드 |
WO2023113547A1 (ko) * | 2021-12-16 | 2023-06-22 | 파워큐브세미 (주) | 산화니켈-산화갈륨 pn 이종접합 형성 방법 및 그 방법으로 제조된 쇼트키 다이오드 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7037142B2 (ja) * | 2017-08-10 | 2022-03-16 | 株式会社タムラ製作所 | ダイオード |
WO2019155768A1 (ja) | 2018-02-09 | 2019-08-15 | 三菱電機株式会社 | 電力用半導体装置 |
JP7165322B2 (ja) * | 2018-03-30 | 2022-11-04 | Tdk株式会社 | ショットキーバリアダイオード |
CN109904239A (zh) * | 2019-03-19 | 2019-06-18 | 南方科技大学 | 一种pin二极管及其制备方法 |
KR102275146B1 (ko) * | 2019-05-20 | 2021-07-08 | 파워큐브세미 (주) | 쇼트키 다이오드 및 그의 제조방법 |
CN111613662B (zh) * | 2020-05-27 | 2021-06-11 | 东北大学 | 偏压诱导共线反铁磁材料产生自旋极化电流的调控方法 |
CN112186032A (zh) * | 2020-10-20 | 2021-01-05 | 西安电子科技大学 | 一种带场板结构的氧化镓结势垒肖特基二极管 |
CN113066870B (zh) * | 2021-03-25 | 2022-05-24 | 电子科技大学 | 一种具有终端结构的氧化镓基结势垒肖特基二极管 |
US20230290886A1 (en) * | 2021-04-15 | 2023-09-14 | Enkris Semiconductor, Inc. | Semiconductor structures and manufacturing methods thereof |
CN113594264B (zh) * | 2021-07-26 | 2022-07-22 | 弘大芯源(深圳)半导体有限公司 | 一种带凹槽结构的肖特基二极管 |
CN113871488A (zh) * | 2021-09-28 | 2021-12-31 | 西安电子科技大学 | 一种复合结构的垂直氧化镓异质结二极管及其制作方法 |
JP2023141100A (ja) * | 2022-03-23 | 2023-10-05 | Tdk株式会社 | ジャンクションバリアショットキーダイオード |
JP2023141101A (ja) * | 2022-03-23 | 2023-10-05 | Tdk株式会社 | ジャンクションバリアショットキーダイオード |
CN116230743B (zh) * | 2022-04-09 | 2024-02-23 | 重庆理工大学 | 一种氧化镓pn异质结二极管 |
CN114864704B (zh) * | 2022-07-11 | 2022-09-27 | 成都功成半导体有限公司 | 具有终端保护装置的碳化硅jbs及其制备方法 |
WO2024029001A1 (ja) * | 2022-08-03 | 2024-02-08 | 三菱電機株式会社 | 半導体装置、および、半導体装置の製造方法 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4637924B2 (ja) * | 2008-03-06 | 2011-02-23 | 株式会社豊田中央研究所 | ダイオード |
JP2012227429A (ja) | 2011-04-21 | 2012-11-15 | Sanken Electric Co Ltd | 半導体装置 |
WO2013035845A1 (ja) * | 2011-09-08 | 2013-03-14 | 株式会社タムラ製作所 | Ga2O3系半導体素子 |
JP2013102081A (ja) * | 2011-11-09 | 2013-05-23 | Tamura Seisakusho Co Ltd | ショットキーバリアダイオード |
JP6206862B2 (ja) | 2012-05-31 | 2017-10-04 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
WO2014049802A1 (ja) * | 2012-09-28 | 2014-04-03 | 株式会社日立製作所 | ショットキーバリアダイオードおよびその製造方法 |
JP2014127573A (ja) | 2012-12-26 | 2014-07-07 | Rohm Co Ltd | 半導体装置 |
KR102267094B1 (ko) * | 2013-08-19 | 2021-06-18 | 이데미쓰 고산 가부시키가이샤 | 산화물 반도체 기판 및 쇼트키 배리어 다이오드 |
JP6194779B2 (ja) | 2013-12-09 | 2017-09-13 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
US10566192B2 (en) * | 2014-05-07 | 2020-02-18 | Cambridge Electronics, Inc. | Transistor structure having buried island regions |
CN108899359A (zh) * | 2014-07-22 | 2018-11-27 | Flosfia 株式会社 | 结晶性半导体膜和板状体以及半导体装置 |
JP2016031953A (ja) * | 2014-07-25 | 2016-03-07 | 株式会社タムラ製作所 | 半導体素子及びその製造方法、半導体基板、並びに結晶積層構造体 |
US10043664B2 (en) * | 2014-09-02 | 2018-08-07 | Flosfia Inc. | Multilayer structure, method for manufacturing same, semiconductor device, and crystalline film |
JP6647621B2 (ja) * | 2015-02-25 | 2020-02-14 | 国立大学法人九州大学 | 不純物導入装置、不純物導入方法及び半導体素子の製造方法 |
JP2017055102A (ja) * | 2015-09-10 | 2017-03-16 | 株式会社豊田自動織機 | トレンチゲート型半導体装置及びその製造方法 |
JP2017112126A (ja) * | 2015-12-14 | 2017-06-22 | 出光興産株式会社 | 積層体、ショットキーバリヤーダイオード及び電気機器 |
JP6749939B2 (ja) * | 2015-12-25 | 2020-09-02 | 出光興産株式会社 | 積層体 |
JP2016178336A (ja) | 2016-06-10 | 2016-10-06 | 住友電気工業株式会社 | 半導体装置の製造方法 |
JP6812758B2 (ja) * | 2016-11-09 | 2021-01-13 | Tdk株式会社 | ショットキーバリアダイオード及びこれを備える電子回路 |
CN106601789B (zh) * | 2016-12-05 | 2018-03-30 | 苏州捷芯威半导体有限公司 | 一种氮化镓基肖特基势垒整流器 |
CN106887470B (zh) * | 2017-01-23 | 2019-07-16 | 西安电子科技大学 | Ga2O3肖特基二极管器件结构及其制作方法 |
CN106876484B (zh) * | 2017-01-23 | 2019-10-11 | 西安电子科技大学 | 高击穿电压氧化镓肖特基二极管及其制作方法 |
JP6967238B2 (ja) * | 2017-02-28 | 2021-11-17 | 株式会社タムラ製作所 | ショットキーバリアダイオード |
JP6809334B2 (ja) * | 2017-03-29 | 2021-01-06 | Tdk株式会社 | 半導体装置及びその製造方法 |
US10777644B2 (en) * | 2017-04-27 | 2020-09-15 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Heterojunction devices and methods for fabricating the same |
-
2018
- 2018-06-08 DE DE112018003362.7T patent/DE112018003362B4/de active Active
- 2018-06-08 WO PCT/JP2018/022020 patent/WO2019003861A1/ja active Application Filing
- 2018-06-08 US US16/617,526 patent/US10971634B2/en active Active
- 2018-06-08 CN CN201880040851.5A patent/CN110809826B/zh active Active
- 2018-06-08 JP JP2019526762A patent/JP6685476B2/ja active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023113536A1 (ko) * | 2021-12-16 | 2023-06-22 | 파워큐브세미 (주) | 산화니켈의 캐리어 농도 조절 방법 및 그 방법으로 제조된 쇼트키 다이오드 |
WO2023113547A1 (ko) * | 2021-12-16 | 2023-06-22 | 파워큐브세미 (주) | 산화니켈-산화갈륨 pn 이종접합 형성 방법 및 그 방법으로 제조된 쇼트키 다이오드 |
Also Published As
Publication number | Publication date |
---|---|
WO2019003861A1 (ja) | 2019-01-03 |
CN110809826B (zh) | 2022-10-28 |
US10971634B2 (en) | 2021-04-06 |
US20200185541A1 (en) | 2020-06-11 |
JPWO2019003861A1 (ja) | 2019-11-07 |
CN110809826A (zh) | 2020-02-18 |
DE112018003362B4 (de) | 2023-08-10 |
DE112018003362T5 (de) | 2020-03-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6685476B2 (ja) | 酸化物半導体装置、および、酸化物半導体装置の製造方法 | |
TWI724160B (zh) | 溝槽式金氧半型肖特基二極體 | |
JP6580267B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP6667712B2 (ja) | 電力用半導体装置 | |
US11239323B2 (en) | Oxide semiconductor device and method for manufacturing same | |
JP4929882B2 (ja) | 半導体装置 | |
US20210167225A1 (en) | Schottky barrier diode | |
US9236434B2 (en) | Semiconductor device and manufacturing method thereof | |
CN112913035B (zh) | 肖特基势垒二极管 | |
JP2014110311A (ja) | 半導体装置 | |
JP2010040972A (ja) | 半導体装置およびその製造方法 | |
WO2016151704A1 (ja) | 窒化物半導体素子及び電力変換装置 | |
CN112913034A (zh) | 肖特基势垒二极管 | |
US11728393B2 (en) | Semiconductor device | |
WO2024029001A1 (ja) | 半導体装置、および、半導体装置の製造方法 | |
JP2012094889A (ja) | 半導体装置 | |
WO2023095395A1 (ja) | ショットキーバリアダイオード | |
WO2023095396A1 (ja) | ジャンクションバリアショットキーダイオード | |
JP2023141101A (ja) | ジャンクションバリアショットキーダイオード | |
JP2023094888A (ja) | ジャンクションバリアショットキーダイオード及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190702 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200303 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200331 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6685476 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |