JP2013102081A - ショットキーバリアダイオード - Google Patents
ショットキーバリアダイオード Download PDFInfo
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- JP2013102081A JP2013102081A JP2011245519A JP2011245519A JP2013102081A JP 2013102081 A JP2013102081 A JP 2013102081A JP 2011245519 A JP2011245519 A JP 2011245519A JP 2011245519 A JP2011245519 A JP 2011245519A JP 2013102081 A JP2013102081 A JP 2013102081A
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- 230000004888 barrier function Effects 0.000 title claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 159
- 108091006149 Electron carriers Proteins 0.000 claims abstract description 55
- 230000015556 catabolic process Effects 0.000 claims abstract description 46
- 230000002441 reversible effect Effects 0.000 claims abstract description 42
- 150000001875 compounds Chemical class 0.000 claims abstract description 7
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 42
- 239000010410 layer Substances 0.000 description 227
- 230000005684 electric field Effects 0.000 description 20
- 239000000758 substrate Substances 0.000 description 14
- 230000004048 modification Effects 0.000 description 12
- 238000012986 modification Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Abstract
【解決手段】ショットキーバリアダイオード1は、n型の導電性を有するGa2O3系化合物半導体からなるn型半導体層3と、n型半導体層3に対しショットキー接触するショットキー電極層2とを備え、n型半導体層3には、ショットキー電極層2にショットキー接触する電子キャリア濃度が比較的低いn−半導体層31と、n−半導体層31よりも高い電子キャリア濃度を有するn+半導体層32とが形成されている。
【選択図】図1
Description
ショットキーダイオード1に対して順方向(ショットキー電極層2側が正電位)に電圧Vを加えると、図3に示すφdが(φd−V)となり、n型半導体層3からショットキー電極層2へ移動する電子による電流が増大する。これにより、順方向電流がショットキー電極層2からオーミック電極層4へ流れる。
本実施の形態によれば、下記の作用効果がある。
図4は、比較例として示すショットキーダイオード10の断面構成を模式的に示す図である。このショットキーダイオード10は、EFG法により作製した厚さ400μmのβ−Ga2O3基板をn−半導体層33として用いた単層構造であり、このn−半導体層33の一方の主面33aにショットキー電極層2を形成し、他方の主面33bにオーミック電極層4を形成した。ショットキー電極層2及びオーミック電極層4の構成は、上記の実施例と共通の構成とした。また、n−半導体層33は、厚さを400μmとし、ノンドープかつ窒素雰囲気熱処理を行わないことで、電子キャリア濃度を8×1016cm−3とした。
次に、本発明の実施の形態に係るショットキーダイオードの構造の3つの変形例を図6〜8を参照して説明する。これらの変形例において、n−半導体層31及びn+半導体層32のキャリア濃度及び厚み等の諸元は、上記説明したものと同様に設定することができる。
図6は、本発明の実施の形態の第1の変形例に係るショットキーダイオード1Aを示し、(a)は平面図、(b)は(a)のA−A断面図である。
図7は、本発明の実施の形態の第2の変形例に係るショットキーダイオード1Bを示し、(a)は平面図、(b)は(a)のA−A断面図である。
図8は、本発明の実施の形態の第3の変形例に係るショットキーダイオード1Cを示し、(a)は平面図、(b)は(a)のA−A断面図である。
Claims (4)
- n型の導電性を有するGa2O3系化合物半導体からなるn型半導体層と、前記n型半導体層に対してショットキー接触する電極層とを備え、
前記n型半導体層には、前記電極層にショットキー接触する第1の半導体層と、前記第1の半導体層よりも高い電子キャリア濃度を有する第2の半導体層とが形成されているショットキーバリアダイオード。 - 前記第1の半導体層の厚みは、逆方向耐圧に対応する空乏層の厚みよりも大きい請求項1に記載のショットキーバリアダイオード。
- 前記第1の半導体層における電子キャリア濃度が1×1017cm−3よりも低い請求項1又は2に記載のショットキーバリアダイオード。
- 前記第2の半導体層における電子キャリア濃度が1×1018cm−3よりも高い請求項1乃至3の何れか1項に記載のショットキーバリアダイオード。
Priority Applications (16)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011245519A JP2013102081A (ja) | 2011-11-09 | 2011-11-09 | ショットキーバリアダイオード |
EP12848460.7A EP2779242A4 (en) | 2011-11-09 | 2012-11-08 | SCHOTTKY BARRIER DIODE |
CN201280054764.8A CN103918082B (zh) | 2011-11-09 | 2012-11-08 | 肖特基势垒二极管 |
US14/357,176 US9171967B2 (en) | 2011-11-09 | 2012-11-08 | Schottky barrier diode |
PCT/JP2012/078983 WO2013069728A1 (ja) | 2011-11-09 | 2012-11-08 | ショットキーバリアダイオード |
KR1020197022358A KR102070847B1 (ko) | 2011-11-09 | 2012-11-08 | 쇼트키 배리어 다이오드 |
CN201910677483.1A CN110233178A (zh) | 2011-11-09 | 2012-11-08 | 肖特基势垒二极管 |
KR1020207002030A KR102191283B1 (ko) | 2011-11-09 | 2012-11-08 | 쇼트키 배리어 다이오드 |
KR1020147014887A KR102025449B1 (ko) | 2011-11-09 | 2012-11-08 | 쇼트키 배리어 다이오드 |
TW105119585A TWI627748B (zh) | 2011-11-09 | 2012-11-09 | 肖特基能障二極體 |
TW101141829A TWI585973B (zh) | 2011-11-09 | 2012-11-09 | Schottky energy barrier diodes |
US14/918,129 US9412882B2 (en) | 2011-11-09 | 2015-10-20 | Schottky barrier diode |
US15/208,469 US9595586B2 (en) | 2011-11-09 | 2016-07-12 | Schottky barrier diode |
US15/436,508 US10600874B2 (en) | 2011-11-09 | 2017-02-17 | Schottky barrier diode |
US16/801,993 US11264466B2 (en) | 2011-11-09 | 2020-02-26 | Schottky barrier diode |
US17/582,924 US20220149158A1 (en) | 2011-11-09 | 2022-01-24 | Schottky barrier diode |
Applications Claiming Priority (1)
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JP2011245519A JP2013102081A (ja) | 2011-11-09 | 2011-11-09 | ショットキーバリアダイオード |
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JP2015206884A Division JP6204436B2 (ja) | 2015-10-21 | 2015-10-21 | ショットキーバリアダイオード |
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JP2011245519A Pending JP2013102081A (ja) | 2011-11-09 | 2011-11-09 | ショットキーバリアダイオード |
Country Status (7)
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---|---|
US (6) | US9171967B2 (ja) |
EP (1) | EP2779242A4 (ja) |
JP (1) | JP2013102081A (ja) |
KR (3) | KR102070847B1 (ja) |
CN (2) | CN103918082B (ja) |
TW (2) | TWI585973B (ja) |
WO (1) | WO2013069728A1 (ja) |
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015025500A1 (ja) * | 2013-08-19 | 2015-02-26 | 出光興産株式会社 | 酸化物半導体基板及びショットキーバリアダイオード |
JP2016162785A (ja) * | 2015-02-27 | 2016-09-05 | 豊田合成株式会社 | 半導体装置およびその製造方法 |
WO2016152536A1 (ja) * | 2015-03-20 | 2016-09-29 | 株式会社タムラ製作所 | 高耐圧ショットキーバリアダイオード |
JP2017045969A (ja) * | 2015-08-28 | 2017-03-02 | 株式会社タムラ製作所 | ショットキーバリアダイオード |
JPWO2015025499A1 (ja) * | 2013-08-19 | 2017-03-02 | 出光興産株式会社 | 酸化物半導体基板及びショットキーバリアダイオード |
WO2017134508A1 (en) | 2016-02-02 | 2017-08-10 | Toyota Jidosha Kabushiki Kaisha | Schottky diode |
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CN103918082B (zh) | 2019-08-20 |
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TW201338155A (zh) | 2013-09-16 |
US9595586B2 (en) | 2017-03-14 |
US10600874B2 (en) | 2020-03-24 |
US20160322467A1 (en) | 2016-11-03 |
US20220149158A1 (en) | 2022-05-12 |
US20140332823A1 (en) | 2014-11-13 |
KR102191283B1 (ko) | 2020-12-15 |
TWI585973B (zh) | 2017-06-01 |
KR102070847B1 (ko) | 2020-01-30 |
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