JP2018170305A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2018170305A JP2018170305A JP2017064123A JP2017064123A JP2018170305A JP 2018170305 A JP2018170305 A JP 2018170305A JP 2017064123 A JP2017064123 A JP 2017064123A JP 2017064123 A JP2017064123 A JP 2017064123A JP 2018170305 A JP2018170305 A JP 2018170305A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 87
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims description 36
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 32
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 32
- 238000003776 cleavage reaction Methods 0.000 abstract description 8
- 230000007017 scission Effects 0.000 abstract description 8
- 238000009751 slip forming Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 48
- 238000004519 manufacturing process Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 19
- 238000005530 etching Methods 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 6
- 239000007772 electrode material Substances 0.000 description 6
- 238000000227 grinding Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- -1 Si 3 N 4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0495—Schottky electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
20 半導体層
20a 第1の電極形成面
20b 第2の電極形成面
20c 側面
21 半導体基板
22 エピタキシャル層
30 絶縁膜
30a 開口部
31 第1の部分
32 第2の部分
40 アノード電極
50 カソード電極
60 スリット
61 内壁
70 支持部材
80 保護部材
E1 第1のエッジ
E2 第2のエッジ
M1 エッチング用マスク
W 酸化ガリウムウェーハ
Claims (5)
- 第1の電極形成面と、前記第1の電極形成面の反対側に位置する第2の電極形成面と、前記第1の電極形成面との境界である第1のエッジ及び前記第2の電極形成面との境界である第2のエッジを有する側面とを有する半導体層と、
前記第1の電極形成面に形成された第1の電極と、
前記第2の電極形成面に形成された第2の電極と、
前記第1のエッジを覆うよう、前記第1の電極形成面から前記側面に亘って連続的に形成された絶縁膜と、を備えることを特徴とする半導体装置。 - 前記半導体層は、前記第2の電極形成面を構成する半導体基板と、前記半導体基板上に設けられ前記第1の電極形成面を構成するエピタキシャル層とを含み、
前記第1の少なくとも一部は前記エピタキシャル層とショットキー接触し、前記第2の電極は前記半導体基板とオーミック接触すること特徴とする請求項1に記載の半導体装置。 - 前記第1の電極の別の一部は、前記第1の電極形成面に形成された前記絶縁膜上に形成されていることを特徴とする請求項2に記載の半導体装置。
- 前記半導体層は、酸化ガリウムからなること特徴とする請求項1乃至3のいずれか一項に記載の半導体装置。
- 前記半導体層は、前記第1の電極形成面から前記第2の電極形成面に向かって断面が拡大するテーパー形状を有していることを特徴とする請求項1乃至4のいずれか一項に記載の半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017064123A JP6809334B2 (ja) | 2017-03-29 | 2017-03-29 | 半導体装置及びその製造方法 |
CN201880022742.0A CN110521004B (zh) | 2017-03-29 | 2018-01-26 | 半导体装置 |
PCT/JP2018/002438 WO2018179768A1 (ja) | 2017-03-29 | 2018-01-26 | 半導体装置 |
EP18778040.8A EP3608972B1 (en) | 2017-03-29 | 2018-01-26 | Semiconductor device |
US16/496,715 US11164953B2 (en) | 2017-03-29 | 2018-01-26 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2017064123A JP6809334B2 (ja) | 2017-03-29 | 2017-03-29 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2018170305A true JP2018170305A (ja) | 2018-11-01 |
JP6809334B2 JP6809334B2 (ja) | 2021-01-06 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2017064123A Active JP6809334B2 (ja) | 2017-03-29 | 2017-03-29 | 半導体装置及びその製造方法 |
Country Status (5)
Country | Link |
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US (1) | US11164953B2 (ja) |
EP (1) | EP3608972B1 (ja) |
JP (1) | JP6809334B2 (ja) |
CN (1) | CN110521004B (ja) |
WO (1) | WO2018179768A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111540788A (zh) * | 2020-06-18 | 2020-08-14 | 中国科学院半导体研究所 | 一种肖特基二极管及制备方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10971634B2 (en) * | 2017-06-29 | 2021-04-06 | Mitsubishi Electric Corporation | Oxide semiconductor device and method of manufacturing oxide semiconductor device |
JP7279354B2 (ja) * | 2018-12-17 | 2023-05-23 | 富士電機株式会社 | 半導体素子及び半導体素子の識別方法 |
CN114497234B (zh) * | 2022-01-25 | 2022-12-06 | 先之科半导体科技(东莞)有限公司 | 一种低损耗小体积的肖特基二极管 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004119472A (ja) * | 2002-09-24 | 2004-04-15 | Seiko Epson Corp | 半導体装置及びその製造方法、回路基板並びに電子機器 |
JP2009267032A (ja) * | 2008-04-24 | 2009-11-12 | Toyota Motor Corp | 半導体装置とその製造方法 |
JP2013102081A (ja) * | 2011-11-09 | 2013-05-23 | Tamura Seisakusho Co Ltd | ショットキーバリアダイオード |
JP2013187438A (ja) * | 2012-03-09 | 2013-09-19 | Mitsubishi Electric Corp | 炭化珪素半導体装置およびその製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09116133A (ja) * | 1995-10-13 | 1997-05-02 | Toyo Electric Mfg Co Ltd | 高耐圧半導体装置 |
JP2002353227A (ja) | 2001-05-28 | 2002-12-06 | Sanken Electric Co Ltd | 半導体素子 |
JP4697397B2 (ja) * | 2005-02-16 | 2011-06-08 | サンケン電気株式会社 | 複合半導体装置 |
JP4945969B2 (ja) * | 2005-09-07 | 2012-06-06 | 横河電機株式会社 | 半導体装置及び半導体装置の製造方法 |
JP2014107499A (ja) * | 2012-11-29 | 2014-06-09 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置およびその製造方法 |
JP2014225557A (ja) * | 2013-05-16 | 2014-12-04 | 住友電気工業株式会社 | 炭化珪素半導体装置および半導体モジュールの製造方法、ならびに炭化珪素半導体装置および半導体モジュール |
-
2017
- 2017-03-29 JP JP2017064123A patent/JP6809334B2/ja active Active
-
2018
- 2018-01-26 WO PCT/JP2018/002438 patent/WO2018179768A1/ja unknown
- 2018-01-26 CN CN201880022742.0A patent/CN110521004B/zh active Active
- 2018-01-26 EP EP18778040.8A patent/EP3608972B1/en active Active
- 2018-01-26 US US16/496,715 patent/US11164953B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004119472A (ja) * | 2002-09-24 | 2004-04-15 | Seiko Epson Corp | 半導体装置及びその製造方法、回路基板並びに電子機器 |
JP2009267032A (ja) * | 2008-04-24 | 2009-11-12 | Toyota Motor Corp | 半導体装置とその製造方法 |
JP2013102081A (ja) * | 2011-11-09 | 2013-05-23 | Tamura Seisakusho Co Ltd | ショットキーバリアダイオード |
JP2013187438A (ja) * | 2012-03-09 | 2013-09-19 | Mitsubishi Electric Corp | 炭化珪素半導体装置およびその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111540788A (zh) * | 2020-06-18 | 2020-08-14 | 中国科学院半导体研究所 | 一种肖特基二极管及制备方法 |
Also Published As
Publication number | Publication date |
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US11164953B2 (en) | 2021-11-02 |
EP3608972A4 (en) | 2020-12-16 |
WO2018179768A1 (ja) | 2018-10-04 |
CN110521004B (zh) | 2023-01-10 |
CN110521004A (zh) | 2019-11-29 |
US20200111882A1 (en) | 2020-04-09 |
JP6809334B2 (ja) | 2021-01-06 |
EP3608972A1 (en) | 2020-02-12 |
EP3608972B1 (en) | 2024-03-20 |
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