JP6580267B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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Description
まず、本発明の実施の形態1における半導体装置の構成を説明する。図1は、本発明の実施の形態1における半導体装置を示す断面図および上面図である。図1(a)は、半導体装置10の構成を示す断面図であり、図1(b)は、半導体装置10の構成を示す上面図である。なお、図1(b)は、断面図ではないが、半導体装置10の構成要素を明確にするために一部の構成要素をハッチングして示した。以下、本発明では他の上面図においても同様に一部の構成要素にハッチングして示している。
図8は、本発明の実施の形態2における半導体装置を示す断面図である。図8において、図1と同じ符号を付けたものは、同一または対応する構成を示しており、その説明を省略する。本発明の実施の形態1とは、窒化物層7aを、n型酸化物半導体層であるn型酸化ガリウム基板1とp型酸化物半導体からなるp型酸化物半導体層4aおよびガードリング4bとの間のみに設けた構成が相違している。
図10は、本発明の実施の形態3における半導体装置を示す断面図および上面図である。図10(a)は、半導体装置40の構成を示す断面図であり、図10(b)は、半導体装置40の構成を示す上面図である。図10(a)および図10(b)において、図1と同じ符号を付けたものは、同一または対応する構成を示しており、その説明を省略する。本発明の実施の形態1とは、カソード電極2cがn型酸化ガリウム基板1の第1の主面、すなわちアノード電極3と同一の主面に設けられた構成が相違している。
図11は、本発明の実施の形態4における半導体装置を示す断面図および一部上面図である。図11(a)は、半導体装置50の構成を示す断面図であり、図11(b)は、半導体装置50の構成を、アノード電極3およびフィールドプレート用絶縁層6を省略して示した上面図である。図11(a)および図11(b)において、図1と同じ符号を付けたものは、同一または対応する構成を示しており、その説明を省略する。本発明の実施の形態1とは、終端構造を構成するp型酸化物半導体層4aよりも中心側に複数のp型酸化物半導体層4cを有し、アノード電極3がn型酸化ガリウム基板1に複数箇所でショットキー接合された構成が相違している。
図12は、本発明の実施の形態5における半導体装置を示す断面図である。図12において、図1と同じ符号を付けたものは、同一または対応する構成を示しており、その説明を省略する。本発明の実施の形態1とは、n型酸化ガリウム基板1の第1の主面上にn型酸化ガリウムエピタキシャル層8が設けられ、n型酸化ガリウムエピタキシャル層8とアノード電極3とがショットキー接合されている構成が相違している。すなわち、実施の形態1に示した半導体装置では、n型酸化物半導体層をn型酸化ガリウム基板1で構成していたが、本実施の形態5の半導体装置60では、n型酸化ガリウム基板1とn型酸化ガリウム基板1上に設けられたn型酸化ガリウムエピタキシャル層8とがn型酸化物半導体層を構成している。なお、本実施の形態5において、n型酸化物半導体層の第1の主面とはn型酸化ガリウムエピタキシャル層8の表面をいい、n型酸化物半導体層の第2の主面とはn型酸化ガリウム基板1の第2の主面と同一の面をいう。
Claims (15)
- n型酸化物半導体層(1、8)と、
前記n型酸化物半導体層(1、8)の第1の主面に接合された第1の電極(3)と、
前記n型酸化物半導体層(1、8)の前記第1の主面、または、前記第1の主面の裏側の面である第2の主面に設けられた第2の電極(2)と、
を備え、
前記第1の電極(3)と前記第2の電極(2)との間に設けられた前記n型酸化物半導体層(1、8)を介して前記第1の電極(3)と前記第2の電極(2)との間に電流が流れる半導体装置であって、
前記第1の電極(3)と前記n型酸化物半導体層(1、8)とが接合された接合部に隣接して設けられたp型酸化物半導体層(4a、4c)と、
前記p型酸化物半導体層(4a、4c)と前記n型酸化物半導体層(1、8)との間に設けられた窒化物層(7、7a、7b、7c、7d)と、
を備えた半導体装置。 - 前記窒化物層(7、7a、7b、7c、7d)は、前記n型酸化物半導体層(1、8)の表面に設けられ、
前記p型酸化物半導体層(4a、4c)は、前記窒化物層(7、7a、7b、7c、7d)上に設けられた請求項1に記載の半導体装置。 - 前記窒化物層(7、7a、7b、7c、7d)の層厚は、0.3nm以上5nm以下である請求項1または請求項2に記載の半導体装置。
- 前記n型酸化物半導体層(1、8)の材料は、酸化ガリウムである請求項1から3のいずれか1項に記載の半導体装置。
- 前記n型酸化物半導体層は、n型酸化ガリウム基板(1)からなる請求項4に記載の半導体装置。
- 前記n型酸化物半導体層は、n型酸化ガリウム基板(1)と、前記n型酸化ガリウム基板(1)上に設けられたn型酸化ガリウムエピタキシャル層(8)とからなり、
前記第1の電極(3)が、前記n型酸化ガリウムエピタキシャル層(8)に接合された請求項4に記載の半導体装置。 - 前記第1の電極(3)と前記n型酸化物半導体層(1、8)とがショットキー接合された請求項1から6のいずれか1項に記載の半導体装置。
- 前記第1の電極(3)が、さらに前記p型酸化物半導体層(4a、4c)にオーミック接合された請求項7に記載の半導体装置。
- 前記第1の電極(3)と前記n型酸化物半導体層(1、8)とがショットキー接合されたショットキー接合部が複数設けられ、
前記窒化物層(7d)および前記p型酸化物半導体層(4a、4c)が、複数の前記ショットキー接合部の間に設けられた請求項8に記載の半導体装置。 - 前記p型酸化物半導体層(4a、4c)上に部分的に設けられたフィールドプレート用絶縁層(6)をさらに備え、
前記第1の電極(3)は、前記p型酸化物半導体層(4a、4c)および前記フィールドプレート用絶縁層(6)を覆って設けられる請求項8または9に記載の半導体装置。 - 前記第1の電極(3)が前記第1の主面に設けられ、前記第2の電極(2)が前記第2の主面に設けられた請求項1から10のいずれか1項に記載の半導体装置。
- 前記窒化物層(7、7a、7b、7c、7d)の材料は、GaNである請求項3から11のいずれか1項に記載の半導体装置。
- 前記p型酸化物半導体層(4a、4c)の材料は、Cu2O、Ag2O、NiO、SnOのうちいずれかを含む請求項1から12のいずれか1項に記載の半導体装置。
- 金属酸化物を含むn型酸化物半導体層(1、8)の表面に、前記金属酸化物に含まれる前記金属を窒化させて、前記n型酸化物半導体層(1、8)が露出された開口を有する窒化物層(7、7a、7b、7c、7d)を形成する工程と、
前記窒化物層(7、7a、7b、7c、7d)上にp型酸化物半導体層(4a、4c)を形成する工程と、
前記開口内で前記n型酸化物半導体層(1、8)に接合された電極(3)を形成する工程と、
を備える半導体装置の製造方法。 - 前記金属酸化物の前記金属は、Gaである請求項14に記載の半導体装置の製造方法。
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