EP3469119A4 - Engineered substrate structure for power and rf applications - Google Patents

Engineered substrate structure for power and rf applications Download PDF

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Publication number
EP3469119A4
EP3469119A4 EP17813933.3A EP17813933A EP3469119A4 EP 3469119 A4 EP3469119 A4 EP 3469119A4 EP 17813933 A EP17813933 A EP 17813933A EP 3469119 A4 EP3469119 A4 EP 3469119A4
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EP
European Patent Office
Prior art keywords
applications
power
substrate structure
engineered substrate
engineered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP17813933.3A
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German (de)
French (fr)
Other versions
EP3469119A1 (en
Inventor
Vladimir Odnoblyudov
Cem Basceri
Shari Farrens
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qromis Inc
Original Assignee
Qromis Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qromis Inc filed Critical Qromis Inc
Publication of EP3469119A1 publication Critical patent/EP3469119A1/en
Publication of EP3469119A4 publication Critical patent/EP3469119A4/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
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    • H01L21/76—Making of isolation regions between components
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    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
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    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/2003—Nitride compounds
EP17813933.3A 2016-06-14 2017-06-13 Engineered substrate structure for power and rf applications Pending EP3469119A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662350077P 2016-06-14 2016-06-14
US201662350084P 2016-06-14 2016-06-14
PCT/US2017/037252 WO2017218536A1 (en) 2016-06-14 2017-06-13 Engineered substrate structure for power and rf applications

Publications (2)

Publication Number Publication Date
EP3469119A1 EP3469119A1 (en) 2019-04-17
EP3469119A4 true EP3469119A4 (en) 2020-02-26

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EP17813933.3A Pending EP3469119A4 (en) 2016-06-14 2017-06-13 Engineered substrate structure for power and rf applications

Country Status (7)

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EP (1) EP3469119A4 (en)
JP (4) JP6626607B2 (en)
KR (1) KR102361057B1 (en)
CN (2) CN109844184B (en)
SG (1) SG11201810919UA (en)
TW (2) TWI793755B (en)
WO (1) WO2017218536A1 (en)

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US10297445B2 (en) 2016-06-14 2019-05-21 QROMIS, Inc. Engineered substrate structure for power and RF applications
EP3469119A4 (en) * 2016-06-14 2020-02-26 Qromis, Inc. Engineered substrate structure for power and rf applications
US10622468B2 (en) * 2017-02-21 2020-04-14 QROMIS, Inc. RF device integrated on an engineered substrate
US10734303B2 (en) * 2017-11-06 2020-08-04 QROMIS, Inc. Power and RF devices implemented using an engineered substrate structure
US10586844B2 (en) * 2018-01-23 2020-03-10 Texas Instruments Incorporated Integrated trench capacitor formed in an epitaxial layer
TWI692869B (en) * 2019-05-03 2020-05-01 世界先進積體電路股份有限公司 Substrates and methods for forming the same
JP7319227B2 (en) 2020-05-11 2023-08-01 信越化学工業株式会社 BASE SUBSTRATE FOR III-V COMPOUND CRYSTAL AND METHOD FOR MANUFACTURING THE SAME
WO2021250991A1 (en) 2020-06-09 2021-12-16 信越化学工業株式会社 Substrate for group-iii nitride epitaxial growth and method for producing the same
JP2022012558A (en) 2020-07-01 2022-01-17 信越化学工業株式会社 Substrate for large-bore group iii nitride-based epitaxial growth, and production method thereof
KR102446604B1 (en) * 2021-01-04 2022-09-26 한국과학기술원 Growth structure for strained channel, and methods for manufacturing strained channel and device using the same
CN116848296A (en) 2021-02-05 2023-10-03 信越半导体株式会社 Nitride semiconductor substrate and method for manufacturing same
JP2022131086A (en) 2021-02-26 2022-09-07 信越半導体株式会社 Nitride semiconductor substrate and manufacturing method for the same
EP4306689A1 (en) * 2021-03-10 2024-01-17 Shin-Etsu Chemical Co., Ltd. Seed substrate for epitaxial growth use and method for manufacturing same, and semiconductor substrate and method for manufacturing same
WO2022259651A1 (en) 2021-06-08 2022-12-15 信越半導体株式会社 Nitride semiconductor substrate and method for producing same
JP2023025432A (en) * 2021-08-10 2023-02-22 信越半導体株式会社 Nitride semiconductor substrate and method for producing the same
WO2023047864A1 (en) * 2021-09-21 2023-03-30 信越半導体株式会社 Nitride semiconductor substrate and method for producing same
WO2023063046A1 (en) * 2021-10-15 2023-04-20 信越半導体株式会社 Nitride semiconductor substrate and manufacturing method therefor
JPWO2023063278A1 (en) * 2021-10-15 2023-04-20
JP2023098137A (en) * 2021-12-28 2023-07-10 信越化学工業株式会社 Substrate for high characteristic epitaxial growth and method for manufacturing the same

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US20120052635A1 (en) * 2010-08-30 2012-03-01 Pil-Kyu Kang Conductive layer buried-type substrate, method of forming the conductive layer buried-type substrate, and method of fabricating semiconductor device using the conductive layer buried-type substrate
US20130234148A1 (en) * 2012-03-09 2013-09-12 Soitec Methods of forming semiconductor structures including iii-v semiconductor material using substrates comprising molybdenum, and structures formed by such methods
WO2017069962A1 (en) * 2015-10-19 2017-04-27 Quora Technology, Inc. Lift off process for chip scale package solid state devices on engineered substrate

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