EP3469119A1 - Engineered substrate structure for power and rf applications - Google Patents
Engineered substrate structure for power and rf applicationsInfo
- Publication number
- EP3469119A1 EP3469119A1 EP17813933.3A EP17813933A EP3469119A1 EP 3469119 A1 EP3469119 A1 EP 3469119A1 EP 17813933 A EP17813933 A EP 17813933A EP 3469119 A1 EP3469119 A1 EP 3469119A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- adhesion
- shell
- substrate
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 124
- 230000004888 barrier function Effects 0.000 claims abstract description 52
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- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 20
- 239000010410 layer Substances 0.000 claims description 519
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 48
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 45
- 239000000463 material Substances 0.000 claims description 39
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 23
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- 238000007254 oxidation reaction Methods 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
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- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 4
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- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
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- 238000005530 etching Methods 0.000 description 3
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- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
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- 230000002411 adverse Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 230000015556 catabolic process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
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- 230000010354 integration Effects 0.000 description 2
- 238000010943 off-gassing Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
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- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
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- -1 yttria) Chemical compound 0.000 description 2
- 229910020781 SixOy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
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- 229910003460 diamond Inorganic materials 0.000 description 1
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
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Classifications
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- H01L33/005—Processes
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- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US201662350077P | 2016-06-14 | 2016-06-14 | |
US201662350084P | 2016-06-14 | 2016-06-14 | |
PCT/US2017/037252 WO2017218536A1 (en) | 2016-06-14 | 2017-06-13 | Engineered substrate structure for power and rf applications |
Publications (2)
Publication Number | Publication Date |
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EP3469119A1 true EP3469119A1 (en) | 2019-04-17 |
EP3469119A4 EP3469119A4 (en) | 2020-02-26 |
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EP17813933.3A Pending EP3469119A4 (en) | 2016-06-14 | 2017-06-13 | Engineered substrate structure for power and rf applications |
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EP (1) | EP3469119A4 (en) |
JP (4) | JP6626607B2 (en) |
KR (1) | KR102361057B1 (en) |
CN (2) | CN114256068A (en) |
SG (1) | SG11201810919UA (en) |
TW (2) | TWI793755B (en) |
WO (1) | WO2017218536A1 (en) |
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JP2022012558A (en) | 2020-07-01 | 2022-01-17 | 信越化学工業株式会社 | Substrate for large-bore group iii nitride-based epitaxial growth, and production method thereof |
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JP2022131086A (en) | 2021-02-26 | 2022-09-07 | 信越半導体株式会社 | Nitride semiconductor substrate and manufacturing method for the same |
JPWO2022191079A1 (en) | 2021-03-10 | 2022-09-15 | ||
EP4354489A1 (en) * | 2021-06-08 | 2024-04-17 | Shin-Etsu Handotai Co., Ltd. | Nitride semiconductor substrate and method for producing same |
JP2023025432A (en) * | 2021-08-10 | 2023-02-22 | 信越半導体株式会社 | Nitride semiconductor substrate and method for producing the same |
WO2023047864A1 (en) * | 2021-09-21 | 2023-03-30 | 信越半導体株式会社 | Nitride semiconductor substrate and method for producing same |
WO2023063046A1 (en) * | 2021-10-15 | 2023-04-20 | 信越半導体株式会社 | Nitride semiconductor substrate and manufacturing method therefor |
WO2023063278A1 (en) * | 2021-10-15 | 2023-04-20 | 信越半導体株式会社 | Nitride semiconductor substrate and method for producing same |
JP2023098137A (en) * | 2021-12-28 | 2023-07-10 | 信越化学工業株式会社 | Substrate for high characteristic epitaxial growth and method for manufacturing the same |
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WO2017218536A1 (en) | 2017-12-21 |
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EP3469119A4 (en) | 2020-02-26 |
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KR102361057B1 (en) | 2022-02-08 |
TW201807839A (en) | 2018-03-01 |
JP2020074399A (en) | 2020-05-14 |
CN109844184B (en) | 2021-11-30 |
TWI793755B (en) | 2023-02-21 |
JP7416556B2 (en) | 2024-01-17 |
SG11201810919UA (en) | 2019-01-30 |
JP2022058405A (en) | 2022-04-12 |
JP2023182643A (en) | 2023-12-26 |
JP7001660B2 (en) | 2022-01-19 |
CN114256068A (en) | 2022-03-29 |
TW202203473A (en) | 2022-01-16 |
TW202322418A (en) | 2023-06-01 |
TWI743136B (en) | 2021-10-21 |
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