JP2012142385A - Semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which prevents light not absorbed by a photothermal conversion layer of an intermediate layer formed between a support substrate and a semiconductor layer from being transmitted to the semiconductor layer concerning light irradiated for separating the support substrate and the semiconductor layer.SOLUTION: A present semiconductor device manufacturing method comprises: a manufacturing step of a laminated support substrate 1 having an intermediate layer 20 including a photothermal conversion layer 21 and a first transparent layer 23; a manufacturing step of a laminated substrate 2; a manufacturing step of a laminated support substrate 3 for an epitaxial growth; a manufacturing step of a laminated support substrate 4 for a device; a manufacturing step of a laminated wafer 5 for the device by light irradiated so as to be absorbed by the photothermal conversion layer 21 of the laminated support substrate 4 for the device and totally reflected by the first transparent layer 23; and a manufacturing method of a semiconductor device 7 including a transparent semiconductor laminated wafer 6.

Description

  The present invention relates to a semiconductor device manufacturing method for efficiently manufacturing a high-quality semiconductor device.

  A group III nitride semiconductor device in which at least one group III nitride semiconductor layer is formed on a substrate is an important semiconductor device as a blue light emitting device, an electronic device or the like. As a substrate for manufacturing such a semiconductor device, a lattice constant and a thermal expansion coefficient are close to those of a group III nitride semiconductor layer from the viewpoint of epitaxially growing a high-quality group III nitride semiconductor layer serving as a light emitting layer. A GaN substrate is preferably used.

  Since such a GaN substrate is very expensive, a thin GaN layer is pasted on a support substrate other than GaN such as a silicon (Si) substrate in Japanese Patent Application Laid-Open No. 2006-210660 (hereinafter referred to as Cited Document 1). A manufacturing method using the combined substrate and the bonded substrate has been proposed.

  In addition, as a useful method for efficiently manufacturing the semiconductor device by separating the support substrate from the GaN layer after epitaxially growing the group III nitride semiconductor layer on the GaN layer of the bonded substrate, In Japanese translations of PCT publication No. 2001-501778 (hereinafter referred to as cited reference 2), the interface between one material layer made of a group III nitride material and the other material layer made of a material other than the group III nitride material or the vicinity of the interface A method of separating one material layer and the other material layer by absorbing electromagnetic radiation (for example, light) exposed to a region of the substrate and decomposing a part of one of the material layers at the interface by the absorption. Proposed.

JP 2006-210660 A JP-T-2001-501778

  However, even if the above-mentioned bonded substrate proposed in Japanese Patent Laid-Open No. 2006-210660 (cited document 1) is used, the support substrate other than GaN and the GaN layer have different coefficients of thermal expansion. It has been difficult to epitaxially grow a high-quality group III nitride semiconductor layer on the GaN layer of the substrate.

  In the method proposed in the above Japanese translations of PCT publication No. 2001-501778 (Cited document 2), one material layer and the other material layer must be different from each other, and the above difficulty due to the difference in thermal expansion coefficient cannot be solved. Moreover, since the exposed electromagnetic radiation (light) decomposes | disassembles the interface of the semiconductor layer used as a device later, there exists a possibility of causing deterioration of device performance.

  Therefore, an intermediate layer is introduced at the interface between the base substrate and the semiconductor layer (the GaN layer and the group III nitride semiconductor layer epitaxially grown thereon), and light having a wavelength that is not absorbed by the support substrate and the semiconductor layer inside the intermediate layer. Consider a substrate on which a material capable of absorbing water is arranged. At this time, a high-quality group III nitride semiconductor layer can be grown by using a substrate (for example, a GaN substrate) having a thermal expansion coefficient identical to that of the semiconductor layer, particularly as the base substrate. Further, by using light of a wavelength that is absorbed only inside the intermediate layer and not absorbed by the support substrate and the semiconductor layer, the semiconductor layer is decomposed by disassembling at least a part of the support substrate and the semiconductor layer adjacent to the intermediate layer. The support substrate can be separated from the substrate.

  In such a case, the irradiated light is not completely absorbed in the intermediate layer, but is absorbed in a region other than the interface between the support substrate and the semiconductor layer and converted to unnecessary heat, which adversely affects device performance. There is a risk of giving.

  In view of this, the present invention eliminates the light irradiated to separate the support substrate and the semiconductor layer from the intermediate layer without being absorbed by the light-to-heat conversion layer of the intermediate layer formed between the support substrate and the semiconductor layer. An object of the present invention is to provide a method of manufacturing a semiconductor device that reduces the transmission rate.

  A manufacturing method of a semiconductor device according to the present invention includes the following steps. That is, a laminated support substrate is formed by forming an intermediate layer including a light-to-heat conversion layer and a first transparent layer arranged in contact with the opposite side of the light-to-heat conversion layer on the Ga-containing transparent support substrate. The process of producing is provided. In addition, the method includes a step of manufacturing a laminated substrate by attaching a GaN substrate to an intermediate layer of the laminated supporting substrate. In addition, by separating the GaN substrate of the laminated substrate from the bonding surface with the intermediate layer at a predetermined depth, the laminated support for epitaxial growth in which the GaN layer is formed on the intermediate layer of the laminated support substrate A step of producing a substrate; In addition, the device includes a step of producing a device multilayer support substrate by epitaxially growing at least one transparent semiconductor layer on the GaN layer of the epitaxial growth support substrate. In addition, the laminated support substrate for devices can absorb the light-to-heat conversion layer at a wavelength longer than the wavelength corresponding to the lowest band gap energy among the band gap energies of the Ga-containing transparent support substrate, the GaN layer, and the transparent semiconductor layer. A device layer including a transparent semiconductor layer, a GaN layer, and an intermediate layer by irradiating light of a wavelength so as to be totally reflected by the first transparent layer and separating the Ga-containing transparent support substrate and the intermediate layer A step of producing a wafer; Further, the method includes a step of removing the intermediate layer from the device laminated wafer to produce a semiconductor device including a transparent semiconductor layer laminated wafer including a transparent semiconductor layer and a GaN layer. According to this method, the light that is not absorbed by the light-to-heat conversion layer, which is an intermediate layer formed between the support substrate and the semiconductor layer, is emitted from the first transparent layer of the intermediate layer. By totally reflecting, light that is not absorbed by the light-to-heat conversion layer of the intermediate layer is prevented from being transmitted to the semiconductor layer or the like, and a high-quality semiconductor device having a high-quality semiconductor layer can be manufactured.

In the method for manufacturing a semiconductor device according to the present invention, the first transparent layer is formed of a material having a refractive index lower than that of the Ga-containing transparent support substrate, and in a vacuum of light applied to the laminated support substrate for devices. Using the wavelength λ ₀ and the refractive index n ₁ of the first transparent layer, the thickness d ₁ of the first transparent layer can satisfy the relationship of d ₁ > 0.5 × λ ₀ / n ₁ . As a result, the light that is not absorbed by the light-to-heat conversion layer of the intermediate layer in the light irradiated to the laminated support substrate for devices is surely totally reflected by the first transparent layer of the intermediate layer, and the evanescent light of the total reflected light is directed to the GaN layer side. Ingredients can be prevented from reaching.

  In the method for manufacturing a semiconductor device according to the present invention, a light propagation angle conversion device can be used as a means for irradiating light to the laminated support substrate for the device so as to totally reflect the first transparent layer. . Thus, even if light is incident on a flat laminated structure such as a laminated support substrate for devices from a medium (for example, air) having a lower refractive index than the first transparent layer of the intermediate layer, the first of the intermediate layer Light can be irradiated so as to be totally reflected by the transparent layer. Light-absorbing layers such as electrodes are often formed on transparent semiconductor layers, etc., and when these layers are irradiated with light, unnecessary heat is generated and the quality of the semiconductor layers deteriorates. Can be prevented.

  In the method for manufacturing a semiconductor device according to the present invention, the light propagation angle conversion device may be a prism formed of a material having a refractive index higher than that of the first transparent layer. Thereby, light can be incident at a free angle from a prism having a higher refractive index than that of the first transparent layer, so that light can be irradiated under conditions that allow total reflection in terms of optical principle.

In the method for manufacturing a semiconductor device according to the present invention, the propagation angle θ _S of the light irradiated to the device multilayer support substrate in the Ga-containing transparent support substrate is the refractive index n _S of the Ga-containing transparent support substrate, the first The relationship of sin ⁻¹ (n ₁ / n _S ) <θ _S <sin ⁻¹ (n _P / n _S ) can be satisfied using the refractive index n ₁ of the transparent layer and the refractive index n _{P of the} prism. . By designing the shape of the prism so as to satisfy this relationship, the light that is not absorbed by the light-to-heat conversion layer of the intermediate layer is reliably totally reflected by the first transparent layer of the intermediate layer in the light irradiated to the laminated support substrate for devices. Can be made.

In the method for manufacturing a semiconductor device according to the present invention, the intermediate layer includes a second transparent layer disposed between the photothermal conversion layer of the intermediate layer and the Ga-containing transparent support substrate and in contact with the photothermal conversion layer. In addition, using the wavelength λ ₀ of the light applied to the device multilayer support substrate in vacuum and the refractive index n ₂ of the second transparent layer, the thickness d ₂ of the second transparent layer is d ₂ < The relationship of 0.25λ ₀ × n ₂ can be satisfied. Thus, even if the refractive index n ₂ of the second transparent layer is smaller than the refractive index n _s of the Ga-containing support substrate, the second transparent layer and the Ga-containing support substrate for the light irradiated to the laminated support substrate for devices Even if the incidence to the interface of the device satisfies the total reflection condition, the evanescent component of the light applied to the device multilayer support substrate can reach the photothermal conversion layer with sufficient intensity. As a result, the photothermal conversion layer can absorb light and emit heat necessary for substrate separation.

  Further, in the method for manufacturing a semiconductor device according to the present invention, after the step of manufacturing the laminated support substrate for devices and before the step of manufacturing the laminated wafer for devices, the transparent support layer side of the multilayer support substrate for devices is provided. The method may further include a step of forming an electrode, and the electrode may be formed of a material that absorbs light irradiated to the laminated support substrate for devices. According to this method, the light that is not absorbed by the light-to-heat conversion layer of the intermediate layer formed between the support substrate and the semiconductor layer is emitted from the first transparent layer of the intermediate layer. Since the light that is totally reflected and is not absorbed by the light-to-heat conversion layer of the intermediate layer is prevented from being transmitted to the semiconductor layer, it is prevented from being absorbed by the electrode and generating heat, so that the transparent semiconductor layer and the GaN layer Is prevented from being damaged, and a high-quality semiconductor device having a high-quality semiconductor layer is obtained.

  Further, in the method for manufacturing a semiconductor device according to the present invention, after the step of manufacturing the laminated support substrate for devices and before the step of manufacturing the laminated wafer for devices, the transparent support layer side of the multilayer support substrate for devices is provided. The method further includes a step of forming either an adhesive or an adhesive layer, and either the adhesive or the adhesive layer can be formed of a material that absorbs light applied to the laminated support substrate for a device. According to this method, the light that is not absorbed by the light-to-heat conversion layer of the intermediate layer formed between the support substrate and the semiconductor layer is emitted from the first transparent layer of the intermediate layer. By preventing light that is totally reflected and not absorbed by the light-to-heat conversion layer in the intermediate layer from being transmitted to the semiconductor layer, it is prevented from being absorbed by either the adhesive or the adhesive layer to generate heat. Damage to the transparent semiconductor layer and the GaN layer is prevented, and a high-quality semiconductor device having a high-quality semiconductor layer is obtained.

  Further, in the method for manufacturing a semiconductor device according to the present invention, after the step of manufacturing the laminated support substrate for devices and before the step of manufacturing the laminated wafer for devices, the transparent support layer side of the multilayer support substrate for devices is provided. The method further includes a step of arranging either the temporary support substrate or the transparent semiconductor layer laminated wafer support substrate, and either the temporary support substrate or the transparent semiconductor layer laminated wafer support substrate absorbs light irradiated to the device multilayer support substrate. It can be made of a material that According to this method, the light that is not absorbed by the light-to-heat conversion layer of the intermediate layer formed between the support substrate and the semiconductor layer is emitted from the first transparent layer of the intermediate layer. Since light that is totally reflected and not absorbed by the light-to-heat conversion layer of the intermediate layer is prevented from being transmitted to the semiconductor layer, heat is generated by being absorbed by either the temporary support substrate or the transparent semiconductor layer laminated wafer support substrate. By preventing the occurrence of damage, the transparent semiconductor layer and the GaN layer are prevented from being damaged, and a high-quality semiconductor device having a high-quality semiconductor layer can be obtained.

Further, in the method for manufacturing a semiconductor device according to the present invention, the phrase “absorbing light” means that the light absorption coefficient at the wavelength of the light irradiated onto the laminated support substrate for devices is 1 × 10 ³ cm ⁻¹ or more. . Thereby, the support substrate for devices can be isolate | separated between a Ga containing transparent support substrate and an intermediate | middle layer by converting a light energy into a heat energy in a photothermal conversion layer.

  Moreover, in the manufacturing method of the semiconductor device concerning this invention, the light irradiated to the laminated support substrate for devices can be made into the light of wavelength 500nm or more and less than 600nm. Accordingly, the Ga-containing transparent support substrate and the intermediate layer can be separated without damaging the Ga-containing transparent support substrate, the GaN layer, and the transparent semiconductor layer.

  Further, in the method for manufacturing a semiconductor device according to the present invention, when the Ga-containing transparent support substrate and the intermediate layer are separated by irradiating the laminated support substrate for devices with light, the Ga-containing transparent support substrate is separated from the Ga-containing transparent support substrate. Metal Ga is deposited at the interface between the intermediate layer and the intermediate layer. By using the deposited metal Ga layer, the Ga-containing transparent support substrate and the intermediate layer can be easily separated.

In the method for manufacturing a semiconductor device according to the present invention, the photothermal conversion layer of the intermediate layer can be an amorphous silicon layer. The amorphous silicon layer has a light absorption coefficient of 1 × 10 ³ cm ⁻¹ or more for light having a wavelength of 500 nm or more and less than 600 nm and a melting point of 1200 ° C. or more, and thus is suitable as a photothermal conversion layer.

In the method for manufacturing a semiconductor device according to the present invention, the first transparent layer and the second transparent layer of the intermediate layer can be independently formed of a silicon oxide layer or a silicon nitride layer. Since the silicon oxide layer and the silicon nitride layer have low refractive indexes of about 1.48 and about 2.0, respectively, they are suitable as a low refractive index layer. In addition, each of the silicon oxide layer and the silicon nitride layer has a light absorption coefficient of less than 1 × 10 ³ cm ⁻¹ for light having a wavelength of 500 nm or more and less than 600 nm and a melting point of 1200 ° C. or more. Suitable as a transparent layer.

In the method for manufacturing a semiconductor device according to the present invention, the transparent semiconductor layer can be a group III nitride semiconductor layer. Since the group III nitride semiconductor layer has a light absorption coefficient of less than 1 × 10 ³ cm ⁻¹ for light having a wavelength of 500 nm or more and less than 600 nm, a high-quality semiconductor device can be obtained without being damaged by irradiation light.

  According to the present invention, with respect to the light irradiated to separate the support substrate and the semiconductor layer, all the light that is not absorbed by the light-to-heat conversion layer of the intermediate layer formed between the support substrate and the semiconductor layer is absorbed by the intermediate layer. By reflecting, the manufacturing method of the semiconductor device which prevents that the light which is not absorbed by the photothermal conversion layer of an intermediate | middle layer permeate | transmits a semiconductor layer can be provided.

It is a schematic sectional drawing which shows an example of the manufacturing method of the semiconductor device concerning this invention. Here, (A) shows the manufacturing process of the laminated support substrate, (B) shows the manufacturing process of the laminated substrate, (C) shows the manufacturing process of the epitaxial growth laminated support substrate, and (D) shows The manufacturing process of the laminated support substrate for devices is shown, (E) and (F) show the manufacturing process of the laminated wafer for devices, and (G) and (H) show the manufacturing process of the semiconductor device. It is a schematic sectional drawing which shows the other example of the manufacturing method of the semiconductor device concerning this invention. Here, (A) shows a manufacturing process of a laminated support substrate for devices with two electrodes, (B) and (C) show a manufacturing process of a laminated wafer for devices with two electrodes, and (D) shows two electrodes. 2 shows a manufacturing process of the attached transparent semiconductor layer laminated wafer, and (E) and (F) show a manufacturing process of the semiconductor device. It is a schematic sectional drawing which shows the other example of the manufacturing method of the semiconductor device concerning this invention. Here, (A) shows the manufacturing process of the laminated support substrate for devices with one electrode, and (B) shows the bonding process of the transparent semiconductor layer laminated wafer support substrate to the laminated support substrate for devices with one electrode. , (C) and (D) show the manufacturing process of a laminated wafer for devices with one electrode and a supporting substrate, and (E) shows the manufacturing process of a transparent semiconductor layer laminated wafer with one electrode and a supporting substrate, (F ) Shows a manufacturing process of a semiconductor device. It is a schematic sectional drawing which shows the other example of the manufacturing method of the semiconductor device concerning this invention. Here, (A) shows the bonding process of the transparent semiconductor layer laminated wafer support substrate to the laminated support substrate for devices, (B) and (C) show the production process of the laminated wafer for devices with the support substrate, (D) shows the manufacturing process of the transparent semiconductor layer laminated wafer with a support substrate, (E) shows the manufacturing process of a semiconductor device. It is a schematic sectional drawing which shows an example of the light irradiation to the laminated support substrate for devices in the manufacturing method of the semiconductor device used as the reference of this invention. It is a schematic sectional drawing which shows an example of the light irradiation to the laminated support substrate for devices in the manufacturing method of the semiconductor device concerning this invention. FIG. 6 shows the relationship between the propagation angle θ _S of the irradiated light in the Ga-containing transparent support substrate and the transmittance T, reflectance R, and absorption rate A in the intermediate layer in the light irradiation to the device laminated support substrate shown in FIG. It is a graph. In the manufacturing method of the semiconductor device concerning this invention, it is a schematic sectional drawing which shows an example of the light irradiation method to the lamination | stacking support substrate for devices.

  With reference to FIGS. 1 to 4, a semiconductor device manufacturing method according to an embodiment of the present invention includes a Ga-containing transparent support substrate 10 on a Ga-containing transparent support substrate 10 and a photothermal conversion layer 21 and a Ga-containing transparent support substrate 10. The intermediate layer 20a including the first transparent layer 23a disposed in contact with the opposite side is formed to prepare the laminated support substrate 1 (FIG. 1A). In addition, the method includes a step of manufacturing the laminated substrate 2 by bonding the GaN substrate 30 to the intermediate layer 20a of the laminated support substrate 1 (FIG. 1B). Further, the GaN layer 30a is formed on the intermediate layer 20 of the laminated support substrate 1 by separating the GaN substrate 30 of the laminated substrate 2 on the surface P having a predetermined depth from the bonding surface with the intermediate layer 20. A step of producing the epitaxial growth support substrate 3 thus prepared (FIG. 1C). In addition, the device includes a step of fabricating the device multilayer support substrate 4 by epitaxially growing at least one transparent semiconductor layer 40 on the GaN layer 30a of the epitaxial growth support substrate 3 (FIGS. 1D and 2). (A), FIG. 3 (A) and (B), and FIG. 4 (A)). Further, the laminated support substrate 4 for devices has a wavelength longer than the wavelength corresponding to the lowest band gap energy among the band gap energies of the Ga-containing transparent support substrate 10, the GaN layer 30a, and the transparent semiconductor layer 40, and a photothermal conversion layer. The transparent semiconductor layer 40 and the GaN are separated from the Ga-containing transparent support substrate 10 and the intermediate layer 20 by irradiating the first transparent layer 23 with light L having a wavelength that can be absorbed by the first transparent layer 23. A step of producing a laminated wafer for devices 5 including a layer 30a and an intermediate layer 20 (FIGS. 1E and 2F, FIGS. 2B and 2C, and FIGS. 3C and 3D). , And FIGS. 4 (B) and (C)). In addition, the intermediate layer 20 is removed from the device laminated wafer 5 to prepare a semiconductor device 7 including the transparent semiconductor layer laminated wafer 6 including the transparent semiconductor layer 40 and the GaN layer 30a (FIG. 1 (G) and (H), FIG. 2 (D)-(F), FIG. 3 (E) and (F), and FIG. 4 (D) and (E)).

  The manufacturing method of the semiconductor device of the present embodiment includes the above-described steps, so that the light irradiated to the laminated support substrate 4 for devices is between the Ga-containing transparent support substrate 10, the GaN layer 30a, and the transparent semiconductor layer 40. The light that is not absorbed by the light-to-heat conversion layer 21 of the intermediate layer 20 is totally reflected by the first transparent layer 23 of the intermediate layer 20, so that the light that is not absorbed by the light-to-heat conversion layer 21 of the intermediate layer 20 is GaN layer 30a. Further, it is possible to manufacture the high-quality semiconductor device 7 having the high-quality GaN layer 30a and the transparent semiconductor layer 40 by preventing the transparent semiconductor layer 40 from penetrating.

(Lamination support substrate manufacturing process)
With reference to FIG. 1 (A), the manufacturing process of the lamination | stacking support substrate 1 contacts the opposite side to the Ga containing transparent support substrate 10 of the photothermal conversion layer 21 and the photothermal conversion layer 21 on the Ga containing transparent support substrate 10. FIG. This is performed by forming an intermediate layer 20a including the first transparent layer 23a that is disposed.

  The method for forming the intermediate layer 20a on the Ga-containing transparent support substrate 10 is not particularly limited, and a plasma CVD (chemical vapor deposition) method, a sputtering method, a vacuum evaporation method, or the like is used.

  In the laminated support substrate 1 obtained by this process, the light applied to the substrate is absorbed by the photothermal conversion layer 21, so that the intermediate layer 20 a including the photothermal conversion layer 21 stores heat and becomes a high temperature. As a result, the surface of the Ga-containing transparent support substrate 10 in contact with the intermediate layer 20a can be decomposed and separated into the intermediate layer 20a and the Ga-containing transparent support substrate 10.

  Since the intermediate layer 20a includes the photothermal conversion layer 21, the intermediate layer 20a has a high temperature as described above. Further, when the transparent semiconductor layer 40 is epitaxially grown, it is exposed to a high temperature of 800 ° C. or higher, and in some cases, near 1100 ° C. For these reasons, the intermediate layer 20a including the photothermal conversion layer 21 preferably has high heat resistance, and preferably has a melting point of, for example, 1200 ° C. or higher.

  Further, the intermediate layer 20 a includes, in addition to the light-to-heat conversion layer 21, a first transparent layer 23 disposed in contact with the opposite side of the light-to-heat conversion layer 21 from the Ga-containing transparent support substrate 10. In the semiconductor device manufacturing method of the present embodiment, the light irradiated to the substrate is absorbed by the photothermal conversion layer 21, and heat is stored in the intermediate layer 20a including the photothermal conversion layer 21 to obtain a high temperature. The surface of the transparent support substrate 10 in contact with the intermediate layer 20a is decomposed and separated into the intermediate layer 20a and the Ga-containing transparent support substrate 10, and light that is not absorbed by the light-to-heat conversion layer 21 is irradiated among the light irradiated on the substrate. Total reflection is performed by the first transparent layer of the intermediate layer.

  Further, the intermediate layer can include a second transparent layer 25 in addition to the light-to-heat conversion layer 21 and the first transparent layer 23a.

  For example, the intermediate layer 20a includes a second transparent layer 25, a photothermal conversion layer 21, and a first transparent layer 23a in this order from the Ga-containing transparent support substrate 10 side. The first transparent layer 23a is bonded to the GaN substrate 30 in a later step (FIG. 1B), and is formed between the GaN substrate 30 and the photothermal conversion layer 21 as the first transparent layer 23 and photothermal conversion. It will be in contact with the layer 21.

Here, the first transparent layers 23a, 23 and the second transparent layer 25 preferably have a light absorption coefficient of less than 1 × 10 ³ cm ⁻¹ for light having a wavelength of 500 nm or more and less than 600 nm. It is preferably either a silicon layer or a silicon nitride layer. The photothermal conversion layer 21 preferably has a light absorption coefficient of 1 × 10 ³ cm ⁻¹ or more for light having a wavelength of 500 nm or more and less than 600 nm, and is preferably an amorphous silicon layer, for example.

The Ga-containing transparent support substrate 10 preferably has a light absorption coefficient for light having a wavelength of 500 nm or more and less than 600 nm of less than 1 × 10 ³ cm ⁻¹ or more, for example, a GaN support substrate.

(Manufacturing process of laminated substrate)
With reference to FIG. 1B, the manufacturing process of the laminated laminated substrate 2 is performed by bonding a GaN substrate 30 to the intermediate layer 20 a of the laminated supporting substrate 1. Here, the method of bonding the GaN substrate 30 to the intermediate layer 20a of the laminated support substrate 1 is not particularly limited, and the surfaces of the bonding surfaces are cleaned and bonded directly, and then heated to 700 ° C to 1000 ° C. Direct bonding method that joins together, metal film is formed, alloy bonding method that joins the metal of the metal film by alloying by raising the temperature while making contact, activated the bonding surface with plasma or ions, etc. The surface activation method is preferably used.

  In addition, the bonded surface of the GaN substrate 30 is formed with an outermost layer of the intermediate layer 20a of the laminated support substrate 1 from the viewpoint of reducing heat transmitted from the photothermal conversion layer to the GaN substrate 30 when the light L is irradiated and increasing bonding strength. It is preferable that layers of the same material are formed chemically. For example, when the outermost layer of the intermediate layer 20a of the laminated support substrate 1 is the first transparent layer 23a, the first transparent layer 23b that is a layer of the same material as the first transparent layer 23a is used. Is preferably formed on the bonding surface of the GaN substrate 30. By bonding the first transparent layer 23b of the GaN substrate 30 to the first transparent layer 23a of the intermediate layer 20a of the laminated support substrate 1, the photothermal conversion layer 21 is interposed between the photothermal conversion layer 21 and the GaN substrate 30. To form a first transparent layer 23. Thus, the photothermal conversion layer 21, the first transparent layer 23 disposed between the photothermal conversion layer 21 and the GaN substrate 30 and in contact with the photothermal conversion layer 21, the photothermal conversion layer 21, and the Ga-containing transparent support substrate. 10 and the second transparent layer 25 disposed in contact with the photothermal conversion layer 21 is formed.

(Manufacturing process of laminated support substrate for epi growth)
Referring to FIG. 1C, in the process of manufacturing the epitaxial growth laminated support substrate 3, the GaN substrate 30 of the laminated laminated substrate 2 is placed on the surface P having a predetermined depth from the bonded surface with the intermediate layer 20. This is done by separating. Through this step, the epitaxial growth laminated support substrate 3 in which the GaN layer 30a is formed on the intermediate layer 20 of the laminated support substrate 1 is obtained.

  The method for separating the GaN substrate 30 from the bonding surface with the intermediate layer 20 on the surface P having a predetermined depth is not particularly limited, and a method for cutting the GaN substrate 30 on the surface P, the laminated support substrate 1 or the like. In order to form a fragile region, the GaN substrate 30 into which ions are implanted into the surface P before being bonded to the laminated support substrate 1 is bonded to the stacked support substrate 1 and then ionized by applying heat and / or stress. A method of separating on the surface P embrittled by implantation is used. By such a method, the GaN layer 30a having a thickness of 0.05 μm to 100 μm can be formed on the intermediate layer 20 of the laminated support substrate 1.

  Here, the Ga-containing transparent support substrate 10 has a thermal expansion coefficient that is the same as or close to the thermal expansion coefficient of the GaN layer 30a from the viewpoint of not generating cracks in the GaN layer 30a during epitaxial growth or annealing. A GaN support substrate having a main surface having the same plane orientation as that of the main surface of the GaN layer 30a is particularly preferable.

(Manufacturing process of laminated support substrate for devices)
Referring to FIG. 1D, the process for manufacturing the device multilayer support substrate 4 is performed by epitaxially growing at least one transparent semiconductor layer 40 on the GaN layer 30 a of the epitaxial growth support substrate 3.

  Here, by using the GaN-containing transparent support substrate 10 whose thermal expansion coefficient is the same as or close to the thermal expansion coefficient of the GaN layer 30a, at least one layer of high quality can be obtained without generating cracks during epitaxial growth or annealing. The transparent semiconductor layer 40 can be formed. From this point of view, the Ga-containing transparent support substrate 10 is preferably a GaN support substrate having a main surface with the same plane orientation as that of the main surface of the GaN layer 30a, for example.

  The method for epitaxially growing at least one transparent semiconductor layer 40 on the GaN layer 30a of the epitaxial growth laminated support substrate 3 is not particularly limited, but from the viewpoint of growing a high-quality transparent semiconductor layer, MOCVD (organometallic) A vapor phase method such as a chemical vapor deposition method, an MBE (molecular beam epitaxy) method or an HVPE (hydride vapor phase epitaxy) method is preferably used.

The at least one transparent semiconductor layer 40 epitaxially grown on the epitaxial growth laminated support substrate 3 has the same lattice constant as that of the GaN layer 30a from the viewpoint of growing the high-quality transparent semiconductor layer 40 without generating cracks or the like. It is preferable that the thermal expansion coefficients are the same as or similar to those of the GaN layer 30a and the Ga-containing transparent support substrate 10. The transparent semiconductor layer 40 preferably has a light absorption coefficient of less than 1 × 10 ³ cm ⁻¹ for light having a wavelength of 500 nm or more and less than 600 nm. Further, from the viewpoint of not absorbing the irradiation light transmitted through the intermediate layer, the transparent semiconductor layer 40 is light having a shorter wavelength than the light irradiated to the laminated support substrate 4 for devices and a peak wavelength of not less than 300 nm and not more than 550 nm. It is preferable to include a light emitting layer 45 that emits. From these viewpoints, the transparent semiconductor layer 40 is preferably a group III nitride semiconductor layer, for example.

(Process for producing laminated wafers for devices)
1 (E) and (F), FIGS. 2 (B) and (C), FIGS. 3 (C) and (D), and FIGS. 4 (B) and 4 (C), device laminated wafer 5 The manufacturing process of the device has a wavelength longer than the wavelength corresponding to the lowest band gap energy among the band gap energies of the Ga-containing transparent support substrate 10, the GaN layer 30 a, and the transparent semiconductor layer 40. This is performed by irradiating light L having a wavelength that can be absorbed by the photothermal conversion layer so as to be totally reflected by the first transparent layer 23 and separating the Ga-containing transparent support substrate 10 and the intermediate layer 20. Through this process, the device laminated wafer 5 including the transparent semiconductor layer 40, the GaN layer 30a, and the intermediate layer 20 is obtained. Here, as shown in FIG. 1 (E), FIG. 2 (B), FIG. 3 (C), and FIG. 4 (B), the light L is on the Ga-containing transparent support substrate 10 side of the laminated support substrate 4 for devices. Irradiated from.

  In this step, the light irradiated on the device multilayer support substrate 4 is absorbed by the photothermal conversion layer 21 of the intermediate layer 20 and converted into heat. With this heat, the surface of the Ga-containing transparent support substrate 10 that contacts the intermediate layer 20 is decomposed, and the laminated support substrate 4 for devices is separated between the Ga-containing transparent support substrate 10 and the intermediate layer 20. Thus, the device laminated wafer 5 including the transparent semiconductor layer 40, the GaN layer 30a, and the intermediate layer 20 is obtained.

  Here, referring to FIG. 5, in this step, Ga-containing transparent support substrate 10, second transparent layer 25, intermediate layer 20 including photothermal conversion layer 21 and first transparent layer 23, and GaN layer 30 a include When the laminated support substrate for devices 4 formed in this order is irradiated with light L from the Ga-containing transparent support substrate 10 side, most of the light L is absorbed by the photothermal conversion layer 21, but is absorbed by the photothermal conversion layer 21. The missing light is transmitted through the transparent semiconductor layer 40 unless it is reflected by the first transparent layer 23. At this time, any of the electrode (p-electrode 80), the adhesive 51, and the adhesive layer, the temporary support substrate 50, the transparent semiconductor layer laminated wafer support substrate, and the like are formed on the transparent semiconductor layer 40. In the case of being formed of a material that absorbs light, light absorption of any of the electrode (p-electrode 80), the adhesive 51 and the adhesive layer, the temporary support substrate 50 and the transparent semiconductor layer laminated wafer support substrate, etc. Due to the heat generated by the above, the transparent semiconductor layer 40 and the GaN layer 30a may be damaged, and the quality and characteristics of the semiconductor device 7 may be deteriorated.

  On the other hand, with reference to FIG. 6, in this process, the light of the said wavelength passes the photothermal conversion layer 21 of the intermediate | middle layer 20 from the Ga containing transparent support substrate 10 side, and is 1st transparent layer 23. In order to totally reflect, that is, the light L not irradiated to the photothermal conversion layer 21 out of the light L irradiated to the device laminated support substrate 4 is totally reflected by the first transparent layer 23. The substrate 4 is irradiated. Therefore, light that is not absorbed by the light-to-heat conversion layer of the intermediate layer is either the transparent semiconductor layer 40, the electrode (p-electrode 80), the adhesive 51, or the adhesive layer, the temporary support substrate 50, and the transparent semiconductor layer laminated wafer support substrate. It is possible to manufacture a high-quality and high-quality semiconductor device 7 having the high-quality transparent semiconductor layer 40 and the GaN layer 30a by preventing any of them from penetrating.

Here, the propagation angle θ _S in the Ga-containing transparent support substrate 10 of the irradiation light for irradiating the light so as to be totally reflected by the first transparent layer 23 differs depending on the structure of the intermediate layer 20, for example, It is calculated as follows. The propagation angle of the irradiation light in each substrate or each layer is defined as an angle formed by the normal direction of the main surface of each layer and the traveling direction of the irradiation light in each layer.

Referring to FIG. 6, a 10 nm thick SiO ₂ layer (second transparent layer 25) as an intermediate layer 20 is in contact with a 400 μm thick GaN support substrate, which is a Ga-containing transparent support substrate 10, and has a thickness of 60 nm. The amorphous silicon layer (photothermal conversion layer 21) and the 325 nm thick SiO ₂ layer (first transparent layer 23) are arranged in this order, and the GaN layer 30a is a 200 nm thick GaN layer, and the transparent semiconductor layer 40 Let us consider a laminated support substrate 4 for a device in which a GaN layer having a thickness of 3000 nm is disposed.

In the device multilayer support substrate 4, the refractive index of GaN forming the Ga-containing transparent support substrate 10, the GaN layer 30a, and the transparent semiconductor layer 40 is 2.5, and the extinction coefficient is 0. The refractive index of SiO ₂ forming the first transparent layer 23 and the second transparent layer 25 is 1.48 and the extinction coefficient is 0. The refractive index of amorphous silicon forming the photothermal conversion layer 21 is 4.0 and the extinction coefficient is 0.25. Here, between the extinction coefficient κ and the light absorption coefficient α, using the wavelength λ ₀ of the light in vacuum, the following equation (i)
α = 4πκ / λ ₀ (i)
There is a relationship. Table 1 summarizes the layer structure of the above-mentioned laminated support substrate for devices and the material, thickness, refractive index, and light absorption coefficient of each layer.

FIG. 7 shows the propagation angle θ _S in the Ga-containing transparent support substrate of the irradiation light when the light L is irradiated from the GaN support substrate (Ga-containing transparent support substrate 10) side of the device multilayer support substrate 4 and the irradiation light. The relationship between the absorptivity A in the intermediate layer 20 (mainly the absorptivity in the photothermal conversion layer 21), the reflectivity R (mainly the reflectivity of the first transparent layer 23) and the transmittance T is shown. Here, between the absorptance A, the reflectance R, and the transmittance T, the following formula (ii)
A + R + T = 1 (ii)
There is a relationship.

Referring to FIG. 7, for device laminated support substrate 4 having the above structure, when propagation angle θ _{S of} irradiated light in Ga-containing transparent support substrate substrate is 40 ° or more, transmission of irradiated light in the intermediate layer is performed. When the rate T is 0 and this T = 0 is substituted into the above equation (ii), R = 1−A. This is the light that is not absorbed by the intermediate layer 20 (particularly the photothermal conversion layer 21) of the irradiated light. Is totally reflected. Here, from the viewpoint of efficiently separating the intermediate layer 20 of the laminated support substrate 4 for devices and the Ga-containing transparent support substrate 10, the absorption rate A of the irradiated light in the intermediate layer 20 (particularly the photothermal conversion layer 21) is large. Is preferred. Therefore, in the laminated support substrate 4 for a device having the above structure, it is preferable that the propagation angle θ _S of the irradiated light in the Ga-containing transparent support substrate is 40 ° or a nearby angle larger than 40 °.

  Furthermore, in this step, the following conditions are satisfied in order to surely totally reflect light that is not absorbed by the photothermal conversion layer 21 out of the light L irradiated to the laminated support substrate 4 for devices by the first transparent layer 23. Is preferred.

(I) Use of Light Propagation Angle Conversion Device Referring to FIG. 1 (E), FIG. 2 (B), FIG. 3 (C), FIG. 4 (B), and FIG. In order to irradiate the light L to the Ga-containing transparent support substrate side of the laminated support substrate for a device so that the propagation angle θ _S of the irradiation light suitable for total reflection on the transparent layer of the device is within the Ga-containing transparent support substrate It is preferable to use the light propagation angle conversion device 150. The light propagation angle conversion device 150 is not particularly limited, but is preferably a prism or a grating from the viewpoint of easily converting the light propagation angle.

When the light propagation angle conversion device 150 is a prism, the prism is preferably formed of a material having a refractive index higher than that of the first transparent layer 23. Here, the refractive index n _P of the prism (light propagation angle conversion device 150), the propagation angle θ _P of the irradiation light in the prism, the refractive index n ₁ of the first transparent layer 23, and the first transparent layer 23 of the irradiation light. The propagation angle θ ₁ is expressed by the following equation (iii) according to Snell's law:
n _P sin θ _P = n ₁ sin θ ₁ (iii)
There is a relationship. Here, since the irradiation light is totally reflected by the first transparent layer 23, its critical value is θ ₁ = 90 ° to sin θ ₁ = 1, and this is substituted into the above formula (iii),
n _P sin θ _P = n ₁ (iv)
Furthermore, when 0 <sin θ _P <1 is substituted into the above equation (iv),
n _P > n ₁ (v)
The above formula (v) indicates that the refractive index n _P of the prism (light propagation angle conversion device 150) is higher than the refractive index n ₁ of the first transparent layer.

Further, from the viewpoint of reliably totally reflecting the light incident on the intermediate layer with the first transparent layer, the propagation angle θ _S of the irradiation light in the Ga-containing transparent support substrate 10 is the refractive index of the Ga-containing transparent support substrate. Using n _S , the refractive index n ₁ of the first transparent layer, and the refractive index n _{P of the} prism, the following formula (vi)
sin ⁻¹ (n ₁ / n _S ) <θ _S <sin ⁻¹ (n _P / n _S ) (vi)
It is preferable to satisfy the relationship. The inequality on the left side of equation (vi) is a condition for the light incident on the intermediate layer to be totally reflected by the first transparent layer. The inequality on the right side of the equation (vi) is a condition that is automatically satisfied if light propagating through the prism enters the Ga-containing transparent support substrate.

Therefore, if the propagation angle θ _{S of} the irradiation light in the Ga-containing transparent support substrate 10 is determined by the above formula (vi), the propagation angle θ _P of the irradiation light in the prism (light propagation angle conversion device 150) is Ga using a refractive index n _P of the refractive index n _S and prisms containing transparent supporting substrate 10 (the light propagation angle conversion device 150), the following equation is Snell's law (vii)
θ _P = sin ⁻¹ (n _S sin θ _S / n _P ) (vii)
Can be calculated.

For example, the Ga-containing transparent support substrate 10 is a GaN support substrate (n _S = 2.5), the first transparent layer is a SiO ₂ layer (n ₁ = 1.48), and a prism (light propagation angle conversion device 150). Is a high refractive index glass with n _P = 2.0, 36.9 ° <θ _S <53.1 ° is obtained from the above formula (vi). Here, in the above formula (vii), when θ _S = 40.0 °, θ _P = 53.5 ° can be determined.

(II) Optimization of the first transparent layer The first transparent layer 23 is preferably formed of a material having a refractive index lower than that of the Ga-containing transparent support substrate 10. Here, the refractive index n _S of the Ga-containing transparent support substrate 10, the propagation angle θ _S of the irradiation light in the Ga-containing transparent support substrate 10, the refractive index n _{1 of} the first transparent layer 23, and the first transparent of the irradiation light. The propagation angle θ ₁ in the layer 23 is expressed by the following equation (viii) according to Snell's law.
n _S sin θ _S = n ₁ sin θ ₁ (viii)
There is a relationship. Here, since the irradiation light is totally reflected by the first transparent layer 23, its critical value is θ ₁ = 90 ° to sin θ ₁ = 1, and this is substituted into the above formula (viii),
n _S sin θ _S = n ₁ (ix)
Furthermore, substituting 0 <sin θ _S <1 into the above formula (ix),
n _S > n ₁ (x)
The above formula (x) indicates that the refractive index n ₁ of the first transparent layer is lower than the refractive index n _S of the Ga-containing transparent support substrate.

Further, from the viewpoint of preventing the evanescent wave of the irradiation light from being coupled to the transparent semiconductor layer 40 beyond the intermediate layer 20, the thickness d ₁ of the first transparent layer 23 has a wavelength λ ₀ in the vacuum of the irradiation light, Using the refractive index n ₁ of the first transparent layer, the following formula (xi)
d ₁ > 0.5 × λ ₀ / n ₁ (xi)
It is preferable to satisfy the relationship.

(III) Optimization of the second transparent layer From the viewpoint of the irradiation light passing through the second transparent layer 25 and being sufficiently absorbed by the photothermal conversion layer 21, the thickness d2 of the _second transparent layer 25 is determined by the irradiation light. Using the wavelength λ ₀ in vacuum and the refractive index n ₂ of the second transparent layer, the following formula (xii)
d ₂ <0.25 × λ ₀ / n ₂ (xii)
It is preferable to satisfy the relationship.

  As described above, in this step, light that is not absorbed by the intermediate light-to-heat conversion layer is prevented from being totally reflected by the first transparent layer 23 and transmitted to the transparent semiconductor layer 40. However, even if light that is not absorbed by the light-to-heat conversion layer of the intermediate layer is transmitted through the transparent semiconductor layer 40, the energy per photon of the light irradiated to the device multilayer support substrate 4 is Ga-containing transparent support substrate. 10, the light that is not absorbed by the intermediate photothermal conversion layer is lower than the lowest band gap energy among the band gap energies of the GaN layer 30a and the transparent semiconductor layer 40, so that the Ga-containing transparent support substrate 10, the GaN layer 30a, and The transparent semiconductor layer 40 transmits light without being absorbed. Thereby, in the Ga containing transparent support substrate 10, the GaN layer 30a, and the transparent semiconductor layer 40, damage caused by heat generated due to unnecessary light absorption can be avoided.

The light irradiated to the device multilayer support substrate 4 has a wavelength longer than the wavelength corresponding to the lowest band gap energy among the band gap energies of the Ga-containing transparent support substrate 10, the GaN layer 30a, and the transparent semiconductor layer 40. Although there is no particular limitation, in order to efficiently separate the Ga-containing transparent support substrate 10 and the intermediate layer 20 with relatively low input energy, light with a wavelength of 500 nm or more and less than 600 nm is preferable. Nd: YAG laser light having a wavelength of 1064 nm excited by a semiconductor laser (where Nd: YAG is a crystal formed by Y (yttrium), A (aluminum), G (garnet) doped with Nd (neodymium) Or Nd: YVO ₄ laser light (where Nd: YVO ₄ is Nd (neo So-called SHG such added a gym) Y (yttrium) · V (vanadium) · O ₄ (the oxide) or Y (refer to crystals formed by yttrium) · VO ₄ (vanadate))) of LiB ₃ O ₅ A laser beam having a wavelength of 532 nm converted by a (Second Harmonic Generation; second harmonic) crystal is preferably used. The light having this wavelength can constitute the Ga-containing transparent support substrate 10, the GaN layer 30a, and the transparent semiconductor layer 40. For example, a group III nitride such as GaN, InGaN, AlGaN, the first transparent layer 23, and the second transparent layer For example, it is not absorbed by silicon oxide or silicon nitride that can constitute the transparent layer 25, but is preferably absorbed by, for example, amorphous silicon that can constitute the photothermal conversion layer 21.

Here, when a GaN support substrate is used as the Ga-containing transparent support substrate 10, the surface in contact with the intermediate layer in the GaN support substrate is decomposed into metal Ga and nitrogen (N ₂ ) gas by irradiation with the light L, and the GaN support is supported. Metal Ga is deposited between the substrate and the intermediate layer. Since metallic Ga melts at 29.8 ° C., the GaN support substrate and the intermediate layer are separated by heating to a temperature higher than this temperature.

In the laminated support substrate 4 for devices, from the viewpoint of forming a high-quality transparent semiconductor layer 40 on the GaN layer 30a, the Ga-containing transparent support substrate 10 is a GaN support substrate, and the transparent semiconductor layer 40 is a group III nitride semiconductor. A layer is preferred. In such a case, the GaN layer 30a, the GaN support substrate (Ga-containing transparent support substrate 10), and the group III nitride semiconductor layer (transparent semiconductor layer 40) usually have a light absorption coefficient of 1 × for light with a wavelength of 500 nm or more and less than 600 nm. Less than 10 ³ cm ⁻¹ . Therefore, for the separation of the GaN support substrate and the intermediate layer, the light irradiated to the laminated support substrate 4 for devices is the GaN layer 30a, the GaN support substrate (Ga-containing transparent support substrate 10), and the group III nitride semiconductor layer. From the viewpoint of reducing damage to the (transparent semiconductor layer 40), light having a wavelength of 500 nm or more and less than 600 nm is preferable.

The intermediate layer 20 becomes a high temperature during the separation between the Ga-containing transparent support substrate 10 and the intermediate layer 20. Further, when the transparent semiconductor layer 40 is epitaxially grown, it is exposed to a high temperature of 800 ° C. or higher, and in some cases, near 1100 ° C. For these reasons, the intermediate layer 20 preferably has high heat resistance, for example, preferably has a melting point of 1200 ° C. or higher. That is, the photothermal conversion layer 21 preferably has high heat resistance, and preferably has a melting point of 1200 ° C. or higher, for example. Moreover, when the light irradiated to the laminated support substrate 4 for devices is a laser beam having a wavelength of 500 nm or more and less than 600 nm, the photothermal conversion layer 21 preferably absorbs light in the wavelength region efficiently, so that the wavelength of 500 nm. The light absorption coefficient for light of less than 600 nm is preferably 1 × 10 ³ cm ⁻¹ or more. As a layer made of a material that satisfies the above requirements, the photothermal conversion layer 21 is preferably, for example, an amorphous silicon layer.

  In the device multilayer support substrate 4, the intermediate layer 20 including the photothermal conversion layer 21 is in contact with the Ga-containing transparent support substrate 10 and the GaN layer 30 a. For this reason, when the photothermal conversion layer 21 is heated to a high temperature by irradiation with the light L described above, the heat is in contact with not only the Ga-containing transparent support substrate 10 but also the GaN layer 30a and the GaN layer 30a. 40 and may damage the GaN layer 30a and the transparent semiconductor layer 40. Such damage to the GaN layer 30a and the transparent semiconductor layer 40 is reduced, and the intermediate layer 20 and the Ga-containing transparent support substrate 10 are reliably separated while maintaining the bonding between the intermediate layer 20 and the GaN layer 30a. Therefore, it is preferable that the intermediate layer 20 further includes a first transparent layer 23 disposed between the photothermal conversion layer 21 of the intermediate layer 20 and the GaN layer 30a. Further, the first transparent layer 23 is formed by diffusing atoms into the GaN layer 30a and the transparent semiconductor layer 40 due to migration of atoms in the photothermal conversion layer 21 (for example, Si atoms in the amorphous silicon layer), and a GaN layer during light irradiation. The damage given to 30a and the transparent semiconductor layer 40 is reduced and the bonding strength between the intermediate layer 20 and the GaN layer 30a is also increased.

The first transparent layer 23 is not particularly limited, in order not to cause thermal damage to the GaN layer 30a and the transparent semiconductor layer 40 due to heat generation accompanying unnecessary light absorption and / or stress damage due to expansion due to heat. The transparency similar to that of the Ga-containing transparent support substrate 10, the GaN layer 30a, and the transparent semiconductor layer 40, that is, the light absorption coefficient for light having a wavelength of 500 nm to 600 nm is preferably less than 1 × 10 ³ cm ⁻¹ . Further, the first transparent layer 23 is in contact with the photothermal conversion layer 21 that is at a high temperature as described above. Further, when the transparent semiconductor layer 40 is epitaxially grown, it is exposed to a high temperature of 800 ° C. or higher, and in some cases, near 1100 ° C. For these reasons, the first transparent layer 23 preferably has high heat resistance, for example, preferably has a melting point of 1200 ° C. or higher. As a material that satisfies the above requirements, the first transparent layer is particularly preferably, for example, one of a silicon oxide layer and a silicon nitride layer.

  Further, from the viewpoint of suppressing atomic diffusion due to migration of atoms in the photothermal conversion layer 21 (for example, Si atoms in the amorphous silicon layer) and increasing the bonding strength between the intermediate layer 20 and the Ga-containing transparent support substrate 10, the intermediate layer 20. Preferably further includes a second transparent layer 25 disposed between the photothermal conversion layer 21 of the intermediate layer 20 and the Ga-containing transparent support substrate 10.

The second transparent layer 25 is not particularly limited, but it does not cause thermal damage to the GaN layer 30a and the transparent semiconductor layer 40 due to heat generation accompanying unnecessary light absorption and / or stress damage due to expansion due to heat. The transparency similar to that of the Ga-containing transparent support substrate 10, the GaN layer 30a, and the transparent semiconductor layer 40, that is, the light absorption coefficient for light having a wavelength of 500 nm to 600 nm is preferably less than 1 × 10 ³ cm ⁻¹ . Further, the second transparent layer 25 is in contact with the photothermal conversion layer 21 that is at a high temperature as described above. Further, when the transparent semiconductor layer 40 is epitaxially grown, it is exposed to a high temperature of 800 ° C. or higher, and in some cases, near 1100 ° C. For these reasons, the second transparent layer 25 preferably has high heat resistance, for example, preferably has a melting point of 1200 ° C. or higher. As a material that satisfies the above requirements, the second transparent layer is particularly preferably, for example, one of a silicon oxide layer and a silicon nitride layer.

  When both the first transparent layer 23 and the second transparent layer 25 are present, the thickness of the first transparent layer 23 is preferably larger than the thickness of the second transparent layer 25. Thereby, the temperature of the bonding surface of the intermediate layer 20 and the Ga-containing Ga-containing transparent support substrate 10 can be made higher than the temperature of the bonding surface of the intermediate layer 20 and the GaN layer 30a. By utilizing this, the temperature of the bonding surface between the intermediate layer 20 and the Ga-containing transparent support substrate 10 is set to be higher than the temperature at which the metal Ga can be formed, and the temperature of the bonding surface between the intermediate layer 20 and the GaN layer 30a is set to the metal. By making the temperature lower than the temperature at which Ga can be formed, metal Ga is not formed on the bonding surface of the intermediate layer 20 and the GaN layer 30a, but only on the bonding surface of the intermediate layer 20 and the Ga-containing transparent support substrate 10. Metal Ga60 can be formed. Thus, the device laminated wafer 5 can be formed by selectively separating the bonding surface between the intermediate layer 20 of the device laminated support substrate 4 and the Ga-containing transparent support substrate 10.

  In this way, the device laminated wafer 5 including the transparent semiconductor layer 40 and the GaN layer 30a is obtained. Here, the device laminated wafer 5 has, on the surface of the intermediate layer 20, a metal Ga 60 formed at the interface between the Ga-containing transparent support substrate 10 and the intermediate layer 20 when the Ga-containing transparent support substrate 10 is separated.

  Here, the device laminated wafer 5 obtained in this step and the transparent semiconductor layer laminated wafer 6 (referred to as a laminated wafer of the GaN layer 30a and the transparent semiconductor layer 40) obtained in the next step have extremely high mechanical strength. Low.

  Therefore, referring to FIG. 1 (E), FIG. 2 (B), FIGS. 3 (B) and (C), and FIGS. 4 (A) and (B), the device laminated wafer 5 and the transparent semiconductor layer to be obtained are obtained. In order to reinforce the mechanical strength of the laminated wafer 6, it is preferable that the temporary support substrate 50 or the transparent semiconductor layer laminated wafer support substrate 70 is bonded to the transparent semiconductor layer 40 side of the device laminated support substrate 4 before this step. In the bonding of the temporary support substrate 50 or the transparent semiconductor layer laminated wafer support substrate 70, the adhesive 51 or the conductive adhesive layers 85a, 85b, 85 are used. Depending on the structure of the semiconductor device to be manufactured, an electrode (for example, a p-electrode) may be formed on the transparent semiconductor layer 40 of the device multilayer support substrate 4 before the step of manufacturing the device multilayer wafer 5 from the device multilayer support substrate 4. 80) is formed.

  As described above, the electrode (p-electrode 80, etc.), the adhesive 51, and the adhesive layer (conductive adhesive layers 85a and 85b) are formed on the transparent semiconductor layer 40 side of the device multilayer support substrate 4 before being irradiated with the light. 85), and at least one of the temporary support substrate 50 and the transparent semiconductor layer laminated wafer support substrate 70, the Ga-containing transparent support substrate 10 side of the device multilayer support substrate 4 is provided. The light that has not been absorbed by the photothermal conversion layer 21 of the intermediate layer 20 among the irradiated light passes through the transparent semiconductor layer 40 if it is not totally reflected by the first transparent layer 23. Any of the electrode (p-electrode 80, etc.), the adhesive 51 and the adhesive layer (conductive adhesive layers 85a, 85b, 85), the temporary support substrate 50, and the transparent semiconductor layer laminated wafer Reached either lifting the substrate 70.

  At this time, the transparent semiconductor layer 40 is transmitted therethrough, and any of the electrode (p-electrode 80, etc.), the adhesive 51 and the adhesive layer (conductive adhesive layers 85a, 85b, 85), the temporary support substrate 50, and the transparent semiconductor. If at least any one of the layer laminated wafer support substrates 70 is formed of the material that absorbs light, the quality of the transparent semiconductor layer 40 may be deteriorated by heat generated by the light absorption.

  For example, in FIG. 2A, electrodes (p-electrode 80, n-electrode 90) are formed on the transparent semiconductor layer 40 of the laminated support substrate 4 for a device before the light irradiation, and in FIG. An electrode (p-electrode 80) is formed on the transparent semiconductor layer 40 of the laminated support substrate for devices 4 before the light irradiation. Here, the material forming the electrode is, for example, nickel (Ni), platinum (Pt), palladium (Pd), gold (Au), silver (Ag), indium (In), antimony (Sb), titanium (Ti ), Aluminum (Al), tungsten (W), molybdenum (Mo), chromium (Cr), tin oxide (SnO) and at least one selected from the group consisting of zinc oxide (ZnO), the substrate is irradiated. The electrode absorbs the light transmitted without being absorbed by the intermediate layer and generates heat.

  That is, in the method for manufacturing a semiconductor device of this embodiment, the light is absorbed by the photothermal conversion layer 21 of the intermediate layer 20 and totally reflected by the first transparent layer 23 of the intermediate layer 20. , The intermediate layer 20 and the Ga-containing transparent support substrate 10 can be efficiently separated and the irradiated light can be prevented from passing through the intermediate layer 20. The device further includes a step of forming an electrode on the transparent semiconductor layer 40 side of the device laminated support substrate 4 after the step of producing and before the step of producing the device laminated wafer 5, wherein the electrode is a device laminated support substrate. 4 is preferably used when formed of the above-described material that absorbs the light irradiated to 4.

  Further, in FIG. 1 (E), an adhesive 51 for bonding the temporary support substrate 50 to the transparent semiconductor layer 40 of the laminated support substrate 4 for devices before the light irradiation is disposed, and in FIG. 2 (B) An adhesive 51 for bonding the temporary support substrate 50 to the transparent semiconductor layer 40 of the laminated support substrate 4 for devices before the light irradiation and the electrodes (p-electrode 80, n-electrode 90) formed thereon is provided. 3B and 3C, the transparent semiconductor layer laminated wafer support substrate is placed on the electrode (p-electrode 80) formed on the transparent semiconductor layer 40 of the device multilayer support substrate 4 before the light irradiation. Adhesive layers (conductive adhesive layers 85a, 85b, 85) for bonding 70 are formed, and in FIGS. 4 (A) and 4 (B), the transparent semiconductor layer of the laminated support substrate 4 for devices before the light irradiation is used. 40 transparent half Body layer-stacked wafer supporting adhesive layer for bonding the substrate 70 (conductive adhesive layer 85a, 85b, 85) are formed. Here, any of the adhesive 51 and the adhesive layers (conductive adhesive layers 85a, 85b, 85) is made of titanium (Ti), gold (Au), silver (Ag), nickel (Ni), aluminum (Al), When at least one selected from the group consisting of zinc (Zn), chromium (Cr), indium (In), and germanium (Ge) is included, the electrode is irradiated on the substrate and transmitted without being absorbed by the intermediate layer May be absorbed to absorb the above.

  That is, in the method for manufacturing a semiconductor device of this embodiment, the light is absorbed by the photothermal conversion layer 21 of the intermediate layer 20 and totally reflected by the first transparent layer 23 of the intermediate layer 20. , The intermediate layer 20 and the Ga-containing transparent support substrate 10 can be efficiently separated and the irradiated light can be prevented from passing through the intermediate layer 20. After the manufacturing process and before the process of manufacturing the device laminated wafer 5, the adhesive 51 and the adhesive layer (conductive adhesive layers 85 a, 85 b, 85) are formed on the transparent support layer 40 side of the device multilayer support substrate 4. ), And any one of the adhesive 51 and the adhesive layer (conductive adhesive layers 85a, 85b, 85) absorbs the light irradiated to the laminated support substrate 4 for devices. When formed by the material, it is preferably used.

Moreover, in FIG.1 (E) and FIG.2 (B), the temporary support substrate 50 is arrange | positioned through the adhesive agent 51 on the transparent semiconductor layer 40 side of the laminated support substrate 4 for devices before the said light irradiation, 3 (C) and 4 (B), an adhesive layer (conductive adhesive layers 85a, 85b, 85) is interposed on the transparent semiconductor layer 40 side of the device multilayer support substrate 4 before the light irradiation. A transparent semiconductor layer laminated wafer support substrate 70 is disposed. Here, one of the temporary support substrate 50 and the transparent semiconductor layer laminated wafer support substrate 70 is silicon (Si), germanium (Ge), gallium arsenide (GaAs), indium phosphide (InP), or silicon carbide (SiC). , Molybdenum (Mo), tungsten (W), copper (Cu), aluminum (Al), gallium oxide (Ga ₂ O ₃ ), zinc selenide (ZnSe), diamond and aluminum nitride (AlN) In the case where at least one of them is included, the electrode absorbs light that is transmitted to the substrate without being absorbed by the intermediate layer, and thus there is a fear of the above.

  That is, in the method for manufacturing a semiconductor device of this embodiment, the light is absorbed by the photothermal conversion layer 21 of the intermediate layer 20 and totally reflected by the first transparent layer 23 of the intermediate layer 20. , The intermediate layer 20 and the Ga-containing transparent support substrate 10 can be efficiently separated and the irradiated light can be prevented from passing through the intermediate layer 20. Either the temporary support substrate 50 or the transparent semiconductor layer laminated wafer support substrate 70 on the transparent semiconductor layer 40 side of the device laminated support substrate 4 after the production step and before the step of producing the device laminated wafer 5. The temporary support substrate 50 and the transparent semiconductor layer laminated wafer support substrate 70 are either of the above materials that absorb light irradiated to the device multilayer support substrate In when formed, it is preferably used.

  In the above-described temporary support substrate 50, in a later step, the Ga-containing transparent support substrate 10 is separated from the device stack support substrate 4 to form a device stack wafer 5 (FIGS. 1E and 1F and FIGS. 2 (B) and (C)), and then the metal Ga 60 and the intermediate layer 20 are separated and removed from the device laminated wafer 5 to form a transparent semiconductor layer laminated wafer 6 (FIGS. 1G and 2D). Then, after the transparent semiconductor layer laminated wafer support substrate 70 is bonded to the GaN layer 30a of the transparent semiconductor layer laminated wafer 6 and the transparent semiconductor layer 40 is supported mechanically, it is removed (FIG. 1H and FIG. 1). 2 (E) and (F)).

  3B and 4A, prior to this step, instead of the temporary support substrate, the transparent semiconductor layer laminated wafer support substrate 70 is replaced with the transparent semiconductor of the device multilayer support substrate 4. It can be bonded to the layer 40 side. In such a case, in a later step, the device laminated wafer 5 in which the Ga-containing transparent support substrate 10 is separated from the device laminated support substrate 4 to which the transparent semiconductor layer laminated wafer support substrate 70 is bonded and the support substrate is bonded. (FIGS. 3C and 3D and FIGS. 4B and 4C), and then the metallic Ga 60 and the intermediate layer 20 are separated and removed from the laminated wafer 5 for devices to which the supporting substrate is attached. A transparent semiconductor layer laminated wafer 6 to which the support substrate is bonded is formed (FIGS. 3E and 4D), and then electrodes and the like are formed on the transparent semiconductor layer stacked wafer 6 to which the support substrate is bonded. Device 7 (FIGS. 3F and 4E) is obtained. That is, when the transparent semiconductor layer laminated wafer support substrate is bonded to the transparent semiconductor layer of the device multilayer support substrate instead of the temporary support substrate, the step of bonding the temporary support substrate and the step of removing it are not required.

(Transparent semiconductor layer laminated wafer manufacturing process)
Referring to FIGS. 1G, 2D, 3E, and 4D, the transparent semiconductor layer laminated wafer 6 is manufactured by removing the intermediate layer 20 from the device laminated wafer 5. Is done. Through this process, the transparent semiconductor layer laminated wafer 6 including the transparent semiconductor layer 40 and the GaN layer 30a is obtained. The method for removing the intermediate layer 20 from the device laminated wafer 5 is not particularly limited, and methods such as wet etching and dry etching generally used in semiconductor processes can be used.

(Semiconductor device fabrication process)
With reference to FIG. 1 (H) and FIGS. 2 (E) and 2 (F), the manufacturing process of the semiconductor device 7 is performed by bonding the transparent semiconductor layer laminated wafer supporting substrate 70 to the transparent semiconductor layer laminated wafer 6. .

  3F and 4E, the manufacturing process of the semiconductor device 7 is performed by forming an electrode (n-electrode 90) on the transparent semiconductor layer laminated wafer 6.

  The method for bonding the transparent semiconductor layer laminated wafer support substrate 70 to the transparent semiconductor layer laminated wafer 6 is not particularly limited, and the surfaces of the surfaces to be bonded are washed and directly bonded, and then heated to 700 ° C. to 1000 ° C. For example, a direct bonding method by bonding and a surface activation method by activating and bonding the bonding surface with plasma or ions are preferably used.

Here, with reference to FIG. 1 (H), FIG. 2 (F), FIG. 3 (F) and FIG. 4 (E), in this semiconductor device 7, the transparent semiconductor layer 40 has a peak with a wavelength of 300 nm or more and 550 nm or less. When the light emitting layer 45 that emits light having a wavelength is included, the transparent semiconductor layer laminated wafer support substrate 70 may have a light absorption coefficient of less than 1 × 10 ⁴ cm ⁻¹ for light having a wavelength of 300 nm to 550 nm. preferable. As a result, it is possible to produce a semiconductor optical device with reduced internal absorption and high light extraction efficiency. From this viewpoint, the transparent semiconductor layer laminated wafer support substrate 70 preferably includes at least one selected from the group consisting of sapphire, spinel, quartz, aluminum nitride, diamond, and glass.

  1H, FIG. 3F, and FIG. 4E, in this semiconductor device 7, a transparent semiconductor layer laminated wafer is supported for the purpose of providing the device with conductivity in the lamination direction. The substrate 70 preferably has conductivity with a specific resistance of 10 Ωcm or less. If the device can be provided with conductivity in the stacking direction, the semiconductor device 7 has, for example, a p-electrode 80 and an n-electrode 90 on both principal surfaces thereof as shown in FIGS. 3 (F) and 4 (E). Can be formed. This eliminates the need to remove a part of the transparent semiconductor layer 40 as compared with the case where both electrodes must be formed on one main surface (see, for example, FIG. 2F), so that a larger area can be obtained. Therefore, a device with higher luminance can be realized. As a material constituting the transparent semiconductor layer laminated wafer support substrate 70, for example, at least one selected from the group consisting of silicon (Si), gallium arsenide (GaAs), indium phosphide (InP), and a first metal is used. It is preferable to include. Here, the first metal is not particularly limited as long as it has electrical conductivity of 10 Ωcm or less, for example, molybdenum (Mo), tungsten (W), copper (Cu), aluminum (Al). Etc. are preferably used.

3F and 4E, in this semiconductor device 7, the conductivity of the device is increased and the transparent semiconductor layer laminated wafer supporting substrate 70 and the electrode (p-electrode 80) or From the viewpoint of enhancing the adhesion between the transparent semiconductor layer 40 and the transparent semiconductor layer laminated wafer supporting substrate 70 and the transparent semiconductor layer 40, the second semiconductor and the conductive oxide are included. It is preferable to further include conductive adhesive layers 85a, 85b, 85 having a specific resistance of 10 Ωcm or less. Here, the second metal is not particularly limited, but from the above viewpoint, for example, titanium (Ti), gold (Au), silver (Ag), nickel (Ni), aluminum (Al), zinc (Zn), It is preferably at least one selected from the group consisting of germanium (Ge) and alloys thereof. The conductive oxide is made of zinc oxide (ZnO), gallium oxide (Ga ₂ O ₃ ), tin oxide (SnO, SnO ₂ ), indium zinc oxide, indium tin oxide (ITO), and antimony tin oxide. It is preferably at least one selected from the group consisting of

3F and 4E, in the semiconductor device 7, the transparent semiconductor layer 40 includes a light emitting layer 45 that emits light having a peak wavelength of 300 nm to 550 nm. The transparent semiconductor layer laminated wafer supporting substrate preferably has a light absorption coefficient of less than 1 × 10 ⁴ cm ⁻¹ for light having a wavelength of 300 nm or more and 550 nm or less. As a result, it is possible to produce a semiconductor optical device with reduced internal absorption and high light extraction efficiency. For the purpose of providing the device with conductivity in the stacking direction, the transparent semiconductor layer laminated wafer support substrate 70 preferably has conductivity with a specific resistance of 10 Ωcm or less. If the device can be provided with conductivity in the stacking direction, the semiconductor device 7 has p-electrodes 80 and n− on both principal surfaces thereof as shown in FIGS. 3 (F) and 4 (E), for example. Electrode 90 can be formed. This eliminates the need to remove a part of the transparent semiconductor layer 40 as compared with the case where both electrodes must be formed on one main surface (see, for example, FIG. 2F), so that a larger area can be obtained. Therefore, a device with higher luminance can be realized. The material constituting the transparent semiconductor layer laminated wafer support substrate 70 is, for example, from the group consisting of gallium oxide (Ga ₂ O ₃ ), silicon carbide (SiC), zinc selenide (ZnSe), aluminum nitride (AlN), and diamond. It is preferable to include at least one selected.

Example 1
1. Production of Laminated Support Substrate With reference to FIG. 1A, a GaN support substrate having a diameter of 2 inches (5.08 cm) and a thickness of 500 μm was prepared as a Ga-containing transparent support substrate 10 by the HVPE method. Such a GaN support substrate had a Ga atom surface with one main surface being a (0001) plane, an N atom surface with another main surface being a (000-1) plane, and both main surfaces were mirror-finished.

On the Ga atom surface of the GaN support substrate (Ga-containing transparent support substrate 10), as an intermediate layer 20, a 10 nm thick SiO ₂ layer (second transparent layer 25) and 60 nm thick amorphous silicon are formed by plasma CVD. A layer (photothermal conversion layer 21) and a SiO ₂ layer (first transparent layer 23a) having a thickness of 300 nm were sequentially deposited to obtain a laminated support substrate 1. The plasma CVD conditions are as follows. In the deposition of the first and second SiO ₂ layers, the flow rate of SiH ₄ gas diluted to 8% by volume with RF of 50 W and Ar gas is 50 sccm (1 sccm is converted to the standard state) 1 cm ³ of gas refers to the amount flowing), N ₂ O gas flow rate per minute Te is 460Sccm, a chamber pressure 80 Pa, a stage temperature of 250 ° C., in the deposition of amorphous silicon layers, RF is 50 W, Ar gas The flow rate of SiH ₄ gas diluted to 8% by volume was 200 sccm, the chamber pressure was 80 Pa, and the stage temperature was 250 ° C.

Further, as a GaN substrate 30 for forming the GaN layer 30a, a GaN substrate having a diameter of 2 inches (5.08 cm) and a thickness of 500 μm formed by the HVPE method was prepared. The GaN substrate 30 has a Ga atom surface whose one main surface is a (0001) plane, an N atom surface whose other main surface is a (000-1) plane, and both main surfaces are mirror-finished. First, an SiO ₂ layer (first transparent layer 23b) having a thickness of 100 nm was deposited on the surface of N atoms of the GaN substrate 30 by plasma CVD. The plasma CVD conditions for depositing this silicon dioxide layer are as follows: RF is 50 W, the flow rate of SiH ₄ gas diluted to 8% by volume with Ar gas is 50 sccm, the N ₂ O gas flow rate is 460 sccm, the chamber pressure is 80 Pa, and the stage temperature. Was 250 ° C. Next, hydrogen ions were implanted from the SiO ₂ layer (first transparent layer 23 b) side of the GaN substrate 30. The hydrogen ion implantation conditions were an acceleration voltage of 50 keV and a dose of 7 × 10 ¹⁷ cm ⁻² . Thus, the GaN substrate 30 implanted with hydrogen ions had a dose peak on the plane P having a depth of about 200 nm from the N atom surface. This dose was measured by performing SIMS (secondary ion mass spectrometer) analysis in the depth direction from the ion implantation side of the GaN substrate ion-implanted in the same batch as a reference.

Adhesion between the GaN support substrate (Ga-containing transparent support substrate 10) and the SiO ₂ layer (second transparent layer 25) of the laminated support substrate 1 obtained above, and the GaN substrate 30 and the SiO ₂ layer in the GaN substrate 30 ( In order to improve the adhesion with the first transparent layer 23b), annealing was performed at 700 ° C. to 1000 ° C. for 10 minutes in a nitrogen atmosphere, and then the main surfaces of the SiO ₂ layers of both substrates were washed. Specifically, both substrates, whose main surfaces are polished to a depth of several tens of nanometers and mirror-finished, are put in a dry etching apparatus and exposed to plasma using oxygen (O ₂ ) gas as a raw material. The main surface of the _two layers was cleaned. The plasma conditions at this time were RF of 100 W, O ₂ gas flow rate of 50 sccm, and chamber pressure of 6.7 Pa.

2. Next, referring to FIG. 1B, the laminated substrate 1 was deposited on the SiO ₂ layer (first transparent layer 23a) of the intermediate layer 20 of the laminated support substrate 1 and the GaN substrate 30. The SiO ₂ layer (first transparent layer 23 b), the crystal orientation of one main surface ((0001) plane) of the GaN support substrate (Ga-containing transparent support substrate 10) of the laminated support substrate 1, and one main GaN substrate 30. By superimposing the crystal orientation of the surface ((0001) plane) to coincide with each other and pressing with a load of 7 MPa (1400 kgf per 2 inch substrate) with a press device (wafer bonder), the SiO ₂ layers are joined together, The laminated support substrate 1 and the GaN substrate 30 were bonded together. The thus obtained laminated laminated substrate 2 was gradually heated from room temperature (25 ° C.) to 300 ° C. in the air over 3 hours, thereby increasing the bonding strength at the bonding interface. Here, in the laminated substrate 2, the thickness of the SiO ₂ layer (first transparent layer 23) disposed between the amorphous silicon layer (photothermal conversion layer 21) of the intermediate layer 20 and the GaN substrate is 325 nm. there were.

3. Next, referring to FIG. 1C, the laminated laminated substrate 2 was heated to 500 ° C. and stress was applied obliquely to the main surface of the substrate. Thermal stress is applied to the surface P having a depth of about 200 nm from the surface of the N atom, which is embrittled by implantation of a large amount of hydrogen ions in the GaN substrate 30 of the laminated substrate 2, and the GaN substrate 30 is laminated on the surface P described above. The GaN layer 30a having a thickness of 200 nm and the remaining GaN substrate 30b joined to the intermediate layer 20 of the support substrate 1 were separated. Thus, the epitaxial growth laminated support substrate 3 in which the GaN layer 30a having a thickness of 200 nm was formed on the intermediate layer 20 of the laminated support substrate 1 was obtained. Here, the remaining GaN substrate 30b separated from the GaN layer 30a can be reused many times after the surface state (flatness, etc.) of the separation surface is adjusted by a technique such as polishing. As a result, the cost per semiconductor device can be finally reduced.

4). Next, referring to FIG. 1D, a GaN layer having a thickness of 2 μm is formed as a transparent semiconductor layer 40 on the GaN layer 30a of the epitaxial growth support substrate 3 by MOCVD. A buffer layer 41, an n-GaN layer 43 having a thickness of 0.5 μm, three pairs of InGaN layers as a light emitting layer 45 having a thickness of 70 nm, a multiple quantum well layer composed of GaN layers, and a p-GaN layer 47 having a thickness of 80 nm. The layers were deposited in this order. In this way, the laminated support substrate 4 for devices was obtained.

Here, in the epitaxial growth of the transparent semiconductor layer 40 by the MOCVD method described above, the temperature of the epitaxial growth laminated support substrate 3 was about 1000 ° C. Further, the epitaxial growth laminated support substrate 3 includes a SiO ₂ layer (first transparent layer 23 and second transparent layer) as an intermediate layer 20 between the GaN support substrate (Ga-containing transparent support substrate 10) and the GaN layer 30a. A transparent layer 25) and an amorphous silicon layer (photothermal conversion layer 21) were included, and the SiO ₂ layer and the amorphous silicon layer differed in thermal expansion coefficient from the GaN support substrate and the GaN layer 30a. However, the total thickness of the intermediate layer 20 in the present example is about 400 nm, and the epitaxially grown transparent semiconductor layer 40 is analyzed by the X-ray diffraction method, and almost the same lattice constant as that of the GaN layer 30a is obtained. It can be said that it has high quality. If the total thickness of the intermediate layer 20 is 1 μm or less, since the generated stress is small, the quality of the epitaxially grown transparent semiconductor layer 40 is maintained high. Next, after the device laminated support substrate 4 obtained was taken out from the CVD apparatus, it was annealed at 700 ° C. in a nitrogen / oxygen atmosphere having a total pressure of 1 atm and oxygen of 16 vol%.

5. Next, with reference to FIG. 2 (A), two electrodes were formed on the device multilayer support substrate 4 as described below. A p-electrode resist mask (not shown) is formed by photolithography on the p-GaN layer 47 of the transparent semiconductor layer 40 of the laminated support substrate 4 for devices, and a Ni layer having a thickness of 5 nm is formed by vacuum evaporation. After forming an Au layer having a thickness of 11 nm in this order, an unnecessary portion of the electrode material was removed by removing the p-electrode resist mask, whereby a p-electrode 80 was formed.

  Next, a p-electrode protecting resist mask (not shown) is formed on the p-electrode 80 and its peripheral region by photolithography, and the main surface of the transparent semiconductor layer 40 on the p-GaN layer 47 side using chlorine gas. The mesa etching was performed to a depth of 250 nm to remove the p-GaN layer 47, the light emitting layer 45, and the n-GaN layer 43 in a partial region of the main surface, and the GaN buffer layer 41 was exposed. Thereafter, the p-electrode protecting resist mask was removed. On the exposed GaN buffer layer 41, an n-electrode 90 composed of a 20 nm thick Ti layer and a 300 nm thick Al layer was formed by the same method as the formation of the p-electrode. In order to obtain an ohmic junction between the p-electrode and the n-electrode and the semiconductor layer, the obtained substrate was annealed at 500 ° C. in a nitrogen / oxygen atmosphere having a total pressure of 1 atm and oxygen of 0.4 vol%. Thus, a laminated support substrate 4A for devices with two electrodes was obtained. Thereafter, although not shown, a pad electrode layer composed of a 20 nm thick Ti layer and a 300 nm thick Au layer may be formed on each of the p-electrode and the n-electrode by a lift-off method. .

  In addition, since the GaN substrate is very expensive, in order to reduce the unit price of the semiconductor device as the final product, as described below, the laminated support substrate for devices is changed from the GaN support substrate (Ga-containing transparent support substrate 10). ) Must be separated. The separated GaN support substrate (Ga-containing transparent support substrate 10) can be used again as a GaN support substrate by treating the main surface by the method described below. Thus, by repeatedly using one GaN substrate, the unit price of the semiconductor device as the final product can be reduced.

6). Next, referring to FIG. 2B, an adhesive is formed on the formation surface of the p-electrode 80 and the n-electrode 90 of the laminated support substrate 4A for devices with two electrodes. 51 was spin-coated, and a temporary support sapphire plate (temporary support substrate 50) was attached using a wafer bonder in an atmosphere heated to 200 ° C. in a vacuum. The adhesive 51 can be softened again by heating to 200 ° C. in consideration of separating the temporary support sapphire plate from the wafer in a later process, for example, Wafer Bond HT-10 manufactured by Brewer Sciences, 10 was chosen.

  Next, the laminated support substrate 4A for devices with two electrodes on which the sapphire plate for temporary support (temporary support substrate 50) was attached was set in a laser annealing apparatus.

Referring to FIG. 8, the laser annealing apparatus 100 includes a YAG-SHG pulse laser 110 that generates green laser pulse light having a wavelength of 532 nm using an Nd: YAG laser and a LiB ₃ O ₅ SHG crystal, and the generated laser. A galvanometer mirror 120 capable of scanning pulsed light in the y-axis direction, an f-θ lens 130 for correcting a focus shift at a processing point due to the scanned laser pulse, and a laser pulse light whose focus shift is corrected are stacked for a device. A fixed mirror 140 for changing the angle of irradiation to the support substrate 4 and a Ga-containing transparent suitable for the laser pulse light irradiated to the laminated support substrate 4 for devices to be totally reflected by the first transparent layer of the intermediate layer prism refractive index for the so the propagation angle theta _S in the support substrate is formed of a high refractive index glass of 2.0 (light And 播角 converter 150), a stage 160 that can be scanned in the x-axis direction to support the laminated base board 4 device was equipped with.

The laser annealing apparatus 100 has a propagation angle θ _S in the Ga-containing transparent support substrate suitable for the total reflection of the laser pulse light applied to the device multilayer support substrate 4 by the first transparent layer of the intermediate layer. The conventional laser annealing apparatus does not have a portion N including a prism (light propagation angle conversion device 150) for fixing the light and a fixed mirror 140 for vertically irradiating the light irradiation surface of the prism with the laser pulse light. Had the characteristics.

Here, the position of the prism (light propagation angle conversion device 150) is fixed, and the processing point (irradiation position) can be changed by moving the stage 160 and the device layered support substrate 4 supported by the stage. It is. Matching oil or the like was filled between the device laminated support substrate 4 and the prism (light propagation angle conversion device 150) as necessary. An angle φ _P formed by the light irradiation surface of the prism (light propagation angle conversion device 150) and the main surface of the device laminated support substrate 4 was 53.5 °.

In addition, the fixed mirror was adjusted so that the laser pulse light was irradiated perpendicularly to the light irradiation surface of the prism. At this time, the propagation angle θ _P of the irradiation laser pulse light in the prism is equal to the angle φ _P formed by the light irradiation surface of the prism (light propagation angle conversion device 150) and the main surface of the laminated support substrate 4 for devices. It was 5 °. Here, the propagation angle θ _P = 53.5 in the prism (light propagation angle conversion device 150) of the irradiation light, the refractive index n _P = 2.0 of the high refractive index glass forming the prism, and the Ga-containing transparent support substrate 10 the refractive index n _S = 2.5 for GaN supporting substrate is, is substituted into the above formula (vii), the propagation angle theta _S in GaN supporting substrate (Ga-containing transparent supporting substrate 10) of the irradiation light is 40.0 It became °. Therefore, referring to the result of FIG. 7, it was considered that the laser pulse light that was not absorbed by the photothermal conversion layer 21 was totally reflected by the first transparent layer 23.

  That is, the irradiated laser pulse light is absorbed by the photothermal conversion layer 21 of the intermediate layer 20, or the laser pulse light that is not absorbed by the photothermal conversion layer is totally reflected by the first transparent layer 23 of the intermediate layer 20. The irradiation light is suppressed from being transmitted through the transparent semiconductor layer 40 and absorbed by the electrodes (p-electrode 80, n-electrode 90), the adhesive 51, the temporary support substrate 50, and the like, and is generated by the light absorption. Generation | occurrence | production of the damage of the transparent semiconductor layer 40 by a heat | fever was suppressed.

  Further, the laser pulse light was efficiently absorbed only by the amorphous silicon layer (photothermal conversion layer 21) of the intermediate layer 20. Thereby, the temperature of the amorphous silicon layer (photothermal conversion layer 21) increased rapidly.

As a result, the bonding surface with the intermediate layer 20 in the GaN support substrate (Ga-containing transparent support substrate 10) located at a short distance of the amorphous silicon layer (photothermal conversion layer 21) has a surface temperature exceeding 900 ° C., Pyrolysis into metal Ga and nitrogen (N ₂ ) gas. On the other hand, the thermal decomposition temperature was not reached on the bonding surface of the GaN layer 30a with the intermediate layer 20. This is because between the GaN layer 30a and the amorphous silicon layer (photothermal conversion layer 21), SiO ₂ (having a thermal conductivity lower than that of GaN (having a thermal conductivity of about 100 W · m ⁻¹ · K ⁻¹ ) ( Since an SiO ₂ layer (first transparent layer 23) having a thermal conductivity of about 10 W · m ⁻¹ · K ⁻¹ and having a thickness of 325 nm is interposed, an amorphous silicon layer (photothermal conversion layer 21) It can be considered that the GaN layer 30a did not reach the thermal decomposition temperature because most of the amount of heat generated in the above was diffused to the GaN support substrate (Ga-containing transparent support substrate 10) side. For the same reason, the temperature of the adhesive 51 portion was suppressed to 100 ° C. or less, and the adhesive 51 was not softened or carbonized. Thus, the metal Ga60 could be deposited only on the bonding surface of the GaN support substrate (Ga-containing transparent support substrate 10) with the intermediate layer 20.

  Next, referring to FIG. 2C, the above-mentioned laminated support substrate for devices 4A with two electrodes on which the metal Ga60 is deposited is placed on a hot plate (not shown) at 60 ° C. The GaN support substrate (Ga-containing transparent support substrate 10) was separated from the intermediate layer 20 by sliding (sliding off) the GaN support substrate in a melted state (29.8 ° C.). Thus, a laminated wafer for devices 5A with two electrodes including the transparent semiconductor layer 40, the GaN layer 30a, and the intermediate layer 20 was obtained. Note that the separated GaN support substrate can be reused by subjecting the main surface to a treatment such as polishing and etching.

7). Step of Producing Transparent Semiconductor Layer Laminated Wafer with Two Electrodes Next, referring to FIG. 2D, the metal Ga60 on the intermediate layer 20 of the laminated wafer for devices 5A with two electrodes is washed with hydrochloric acid to obtain an intermediate layer. 20 (SiO ₂ layer and amorphous silicon layer partially polysiliconized) was removed by wet etching using a hydrofluoric acid nitric acid mixed solution. Thus, a transparent semiconductor layer laminated wafer 6A with two electrodes including the transparent semiconductor layer 40 and the GaN layer 30a was obtained.

8). Next, referring to FIG. 2 (E), a transparent semiconductor layer laminated wafer supporting substrate prepared separately on the GaN layer 30a of the transparent semiconductor layer laminated wafer 6A with two electrodes as described below. 70 was bonded.

Here, the prepared transparent semiconductor layer laminated wafer support substrate 70 was a sapphire substrate having a thickness of 150 μm. For the bonding, after cleaning the main surface of the GaN layer 30a of the transparent semiconductor layer laminated wafer 6A with two electrodes, it is put into a plasma etching apparatus, and nitrogen plasma (the plasma conditions are RF 100W and N ₂ gas flow rate 50sccm). The main surface was cleaned by exposure to a chamber pressure of 13.3 Pa.). The main surface of the sapphire substrate (transparent semiconductor layer laminated wafer support substrate 70) was also cleaned, and then oxygen plasma (the plasma conditions were RF of 100 W, O ₂ gas flow rate of 50 sccm, and chamber pressure of 6.7 Pa) To clean the main surface. After the two-electrode transparent semiconductor layer laminated wafer 6A and the sapphire substrate (transparent semiconductor layer laminated wafer support substrate 70) were bonded together, they were pressed and bonded by using a wafer bonder in the air with a load of 7 MPa. .

  Next, referring to FIG. 2F, the bonded substrate is heated with a hot plate to 200 ° C., which is the softening temperature of the adhesive, and the sapphire substrate for temporary support (temporary support substrate) is formed. 50) was removed by sliding off. The adhesive remaining on the p-electrode 80 and n-electrode 90 side on the transparent semiconductor layer 40 was removed with a dedicated remover.

  The semiconductor device 7 which is LED (light emitting diode) was obtained by said process. In such semiconductor devices, general elementalization processes (processes such as scribe, break, die bond, and wire bond) can be applied thereafter.

(Example 2)
1. Manufacturing Process Up to Device Multilayer Support Substrate With reference to FIGS. 1A to 1D, a device multilayer support substrate 4 was obtained in the same manner as in Example 1.

2. Next, referring to FIG. 3A, a vacuum deposition method is performed on the entire surface of the transparent semiconductor layer 40 of the device multilayer support substrate 4 on the p-GaN layer 47 with reference to FIG. Thus, as the p-electrode 80, a Ni / Au / Pt / Au electrode (specifically, from the p-GaN layer 47 side, a 5 nm thick Ni layer / 11 nm thick Au layer / 100 nm thick Pt layer) / An electrode composed of an Au layer having a thickness of 300 nm). Thus, a laminated support substrate 4B for a device with one electrode was obtained.

3. Step of bonding transparent semiconductor layer laminated wafer support substrate to laminated support substrate for device with one electrode Next, referring to FIG. 3B, a p-type conductive Si substrate as transparent semiconductor layer laminated wafer support substrate 70 ((100) The specific resistance on the main surface is less than 1 Ω · cm). On one mirror-polished main surface of this p-type conductive Si substrate (transparent semiconductor layer laminated wafer support substrate 70), a 20 nm thick Cr layer / thickness 300 nm is formed as a conductive adhesive layer 85 by vacuum deposition. Au layer / AuSn layer (thickness ratio: Au: Su = 80: 20) was formed.

  3B to 3C, the main surface on the Au layer side of the 300 nm-thickness of the p-electrode 80 of the laminated support substrate for devices 4B with one electrode, and the p-type conductive Si substrate The conductive adhesive layer 85 formed on the (transparent semiconductor layer laminated wafer support substrate 70) is superposed on the main surface on the AuSn layer side with a thickness of 1.5 μm, and is 1 MPa (per 2 inch substrate) in a vacuum atmosphere. Bonding was performed by heat bonding at 300 ° C. for 10 minutes while pressing with a load of about 200 kgf). Thus, a laminated support substrate 4BC for devices with one electrode and a support substrate was obtained.

4). Next, referring to FIGS. 3C to 3D, a laser pulse light is applied to the device laminated support substrate for a device with one electrode and a support substrate. By irradiating from the 4BC GaN support substrate (Ga-containing transparent support substrate 10) side so as to be absorbed by the photothermal conversion layer 21 of the intermediate layer 20 and totally reflected by the first transparent layer 23, one electrode and a support substrate By removing the GaN support substrate (Ga-containing transparent support substrate 10) from the attached device support substrate 4BC, a device laminate wafer 5BC with one electrode and a support substrate was obtained.

  Here, since the laser pulse light that has not been absorbed by the photothermal conversion layer 21 is totally reflected by the first transparent layer 23, the irradiation light passes through the transparent semiconductor layer 40 and passes through the electrode (p-electrode 80) and the adhesive layer ( The absorption by the conductive adhesive layer 85), the transparent semiconductor layer laminated wafer support substrate 70, and the like were suppressed, and the occurrence of damage to the transparent semiconductor layer 40 due to the heat generated by the light absorption was suppressed.

5. Process for Producing Transparent Semiconductor Layer Laminated Wafer with One Electrode and Support Substrate Next, referring to FIG. 3E, in the same manner as in Example 1, a metal is produced from the device laminated wafer 5BC with one electrode and the support substrate. Ga60 and the intermediate layer 20 were removed. Thus, a transparent semiconductor layer laminated wafer 6BC with one electrode and a supporting substrate was obtained.

6). Next, referring to FIG. 3F, a photolithography method and a vacuum are formed on the main surface (N atom surface) of the Ga layer 30a of the transparent semiconductor layer laminated wafer 6BC with one electrode and a supporting substrate. A patterned Ti / Al electrode (specifically, an electrode composed of a 20 nm thick Ti layer and a 300 nm thick Al layer) was formed by vapor deposition. Next, the Ti / Al electrode (n-electrode 90) was annealed at 500 ° C. in an atmospheric pressure nitrogen atmosphere to obtain an ohmic electrode. Next, a Ti / Au layer (specifically, a Ti layer having a thickness of 20 nm and an Au layer having a thickness of 300 nm are formed on the Ti / Al electrode (n-electrode 90) by photolithography and vacuum deposition again. ) To form a patterned pad electrode layer.

  The semiconductor device 7 which is LED (light emitting diode) was obtained by said process. In such semiconductor devices, general elementalization processes (processes such as scribe, break, die bond, and wire bond) can be applied thereafter.

(Example 3)
1. Manufacturing Process Up to Device Multilayer Support Substrate With reference to FIGS. 1A to 1D, a device multilayer support substrate 4 was obtained in the same manner as in Example 1.

2. Step of bonding transparent semiconductor layer laminated wafer support substrate to device multilayer support substrate Next, referring to FIG. 4A, on the p-GaN layer 47 of the transparent semiconductor layer 40 of the device multilayer support substrate 4 By sputtering, an ITO (indium tin oxide) layer having a thickness of 200 nm, an Ag layer having a thickness of 50 nm, a Pt layer having a thickness of 100 nm, and an Au layer having a thickness of 300 nm are formed on the entire surface by a sputtering method. An ITO / Ag / Pt / Au pad electrode layer for bonding laminated in order was formed.

  In addition, a transparent semiconductor layer laminated wafer support substrate 70 in which a Cr / Au / In pad electrode layer (conductive adhesive layer 85b) for bonding was formed on the main surface was prepared. As the transparent semiconductor layer laminated wafer support substrate 70, a p-type conductive Si substrate having a specific resistance of less than 1 Ω · cm doped with B (boron), which is a conductive support substrate, was used.

  4A to 4B, the Au layer of the bonding pad electrode layer (conductive adhesive layer 85a) formed on the device laminated support substrate 4 and the transparent semiconductor layer laminated wafer support. The In layer of the bonding pad electrode layer (conductive adhesive layer 85b) formed on the substrate 70 is overlaid and heated and pressurized using a wafer bonder at 200 ° C. and 1 MPa (about 200 kgf per 2 inch wafer). And bonded together. Thus, a laminated support substrate 4C for devices with a support substrate was obtained.

3. Next, referring to FIGS. 4B to 4C, a laser pulse light is applied to a device laminated support substrate for a device with a support substrate, with reference to FIGS. Irradiation from the 4C GaN support substrate (Ga-containing transparent support substrate 10) side so as to be absorbed by the photothermal conversion layer 21 of the intermediate layer 20 and totally reflected by the first transparent layer 23, thereby providing a device with a support substrate The Ga-containing transparent support substrate 10 was separated from the laminated support substrate 4C for use. Thus, a laminated wafer for devices 5C with a supporting substrate was obtained.

  Here, since the laser pulse light that has not been absorbed by the photothermal conversion layer 21 is totally reflected by the first transparent layer 23, the irradiation light passes through the transparent semiconductor layer 40 and passes through the adhesive layers (conductive adhesive layers 85 a, 85 b, 85), the absorption by the transparent semiconductor layer laminated wafer support substrate 70 or the like is suppressed, and the occurrence of damage to the transparent semiconductor layer 40 due to the heat generated by the light absorption is suppressed.

4). Step of Producing Transparent Semiconductor Layer Laminated Wafer with Support Substrate Next, referring to FIG. 4D, from the device laminated wafer 5C with a support substrate, in the same manner as in Example 1, the metal Ga 60 and the intermediate layer 20 Separated and removed. Thus, a transparent semiconductor layer laminated wafer 6C with a support substrate was obtained.

5. Next, referring to FIG. 4E, a vacuum deposition method is performed on a p-type conductive Si substrate (transparent semiconductor layer laminated wafer supporting substrate) of a transparent semiconductor layer laminated wafer 6C with a supporting substrate. Thus, a Ti / Au electrode (specifically, a pad electrode composed of a 20 nm thick Ti layer and a 300 nm thick Au layer) was formed as the p-electrode 80. Further, on the GaN layer 30a of the transparent semiconductor layer laminated wafer 6 with the support substrate, a Ti / Al electrode (specifically, a Ti layer having a thickness of 20 nm and a thickness) is formed as an n-electrode 90 by a vacuum deposition method and a lift-off method. Electrode having a thickness of 300 nm). In order to obtain an ohmic junction between the p-electrode 80 and the p-electrode 90 and the semiconductor layer, the transparent semiconductor layer laminated wafer 6C with a supporting substrate on which these electrodes were formed was annealed at 500 ° C. in a nitrogen atmosphere. Thus, a semiconductor device 7 which is an LED was obtained. Thereafter, a general element forming process (processes such as scribe, break, die bond, wire bond) can be applied.

  It should be understood that the embodiments and examples disclosed herein are illustrative and non-restrictive in every respect. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  DESCRIPTION OF SYMBOLS 1 Laminated support board | substrate, 2 Laminated laminated substrate, Laminated support board | substrate for epi-growth, Laminated support board | substrate for 4, 4A, 4B, 4BC, 4C device, Laminated wafer for 5, 5A, 5BC, 5C device, 6, 6A, 6BC, 6C transparent semiconductor layer laminated wafer, 7 semiconductor device, 10 Ga-containing transparent support substrate, 20, 20a intermediate layer, 21 photothermal conversion layer, 23, 23a, 23b first transparent layer, 25 second transparent layer, 30 GaN substrate, 30a GaN layer, 30b remaining GaN substrate, 40 transparent semiconductor layer, 41 GaN buffer layer, 43 n-GaN layer, 45 light emitting layer, 47 p-GaN layer, 50 temporary support substrate, 51 adhesive, 60 metal Ga , 70 Transparent semiconductor layer laminated wafer support substrate, 80 p-electrode, 85a, 85b, 85 conductive adhesive layer, 90 n-electrode, 100 layer Zaaniru device 110 YAG-SHG pulse laser, 120 galvanomirror, 130 f-theta lens, 140 fixed mirror, 150 light propagation angle conversion device 160 stage.

Claims (15)

An intermediate layer including a light-to-heat conversion layer and a first transparent layer disposed in contact with the opposite side of the light-to-heat conversion layer from the Ga-containing transparent support substrate is formed on a Ga-containing transparent support substrate to form a laminated support substrate A step of producing
Bonding a GaN substrate to the intermediate layer of the laminated support substrate to produce a laminated laminated substrate;
Epi-growth in which a GaN layer is formed on the intermediate layer of the laminated support substrate by separating the GaN substrate of the laminated laminated substrate at a predetermined depth from the bonding surface with the intermediate layer Producing a laminated support substrate for use,
Producing a laminated support substrate for a device by epitaxially growing at least one transparent semiconductor layer on the GaN layer of the laminated support substrate for epi growth; and
The laminated support substrate for a device has a wavelength longer than the wavelength corresponding to the lowest band gap energy among the band gap energies of the Ga-containing transparent support substrate, the GaN layer, and the transparent semiconductor layer, and the photothermal conversion layer. The transparent semiconductor layer and the GaN layer are separated by separating the Ga-containing transparent support substrate and the intermediate layer by irradiating light having a wavelength that can be absorbed so as to be totally reflected by the first transparent layer. Producing a laminated wafer for devices including the intermediate layer;
Removing the intermediate layer from the device laminated wafer to produce a semiconductor device including a transparent semiconductor layer laminated wafer including the transparent semiconductor layer and the GaN layer. The first transparent layer is formed of a material having a refractive index lower than that of the Ga-containing transparent support substrate, and the wavelength λ ₀ of the light applied to the device multilayer support substrate in a vacuum, the first Using the refractive index n ₁ of the transparent layer of
2. The method of manufacturing a semiconductor device according to claim 1, wherein a thickness d ₁ of the first transparent layer satisfies a relationship of d ₁ > 0.5 × λ ₀ / n ₁ .   3. The semiconductor device according to claim 1, wherein a light propagation angle conversion device is used as means for irradiating the light onto the device multilayer support substrate so that the first transparent layer totally reflects the light. Production method.   The method of manufacturing a semiconductor device according to claim 3, wherein the light propagation angle conversion device is a prism formed of a material having a refractive index higher than that of the first transparent layer. Propagation angle theta _S in the light of the Ga-containing transparent supporting substrate to be irradiated on the laminated backing substrate said device, said Ga refractive index n _S-containing transparent support substrate, the refractive index n ₁ of the first transparent layer And the refractive index n _{P of the} prism,
sin ⁻¹ (n ₁ / n _S ) <θ _S <sin ⁻¹ (n _P / n _S )
The manufacturing method of the semiconductor device of Claim 4 which satisfy | fills these relationships. The intermediate layer further includes a second transparent layer disposed between the light-to-heat conversion layer of the intermediate layer and the Ga-containing transparent support substrate and in contact with the light-to-heat conversion layer,
Using the wavelength λ ₀ of the light applied to the device multilayer support substrate in vacuum, and the refractive index n ₂ of the second transparent layer,
The method for manufacturing a semiconductor device according to claim 5, wherein a thickness d ₂ of the second transparent layer satisfies a relationship of d ₂ <0.25λ ₀ × n ₂ . After the step of producing the device laminated support substrate and before the step of producing the device laminated wafer, further comprising the step of forming an electrode on the transparent semiconductor layer side of the device laminated support substrate,
The said electrode is a manufacturing method of the semiconductor device in any one of Claims 1-6 formed with the material which absorbs the said light irradiated to the said laminated support substrate for devices. After the step of producing the laminated support substrate for devices and before the step of producing the laminated wafer for devices, either an adhesive or an adhesive layer is provided on the transparent semiconductor layer side of the laminated support substrate for devices. Further comprising the step of forming,
Either of the said adhesive agent and the said contact bonding layer is formed with the material which absorbs the said light irradiated to the said laminated support substrate for devices, The manufacturing method of the semiconductor device in any one of Claims 1-6 . After the step of manufacturing the laminated support substrate for devices and before the step of manufacturing the laminated wafer for devices, a temporary support substrate and a transparent semiconductor layer laminated wafer are provided on the transparent semiconductor layer side of the laminated support substrate for devices. Further comprising the step of arranging any of the support substrates,
Either the temporary support substrate or the transparent semiconductor layer laminated wafer support substrate is formed of a material that absorbs the light applied to the device multilayer support substrate. Semiconductor device manufacturing method. The absorption of the light means that the light absorption coefficient at the wavelength of the light irradiated on the laminated support substrate for devices is 1 × 10 ³ cm ⁻¹ or more. The manufacturing method of the semiconductor device of description.   11. The method of manufacturing a semiconductor device according to claim 1, wherein the light applied to the device multilayer support substrate is light having a wavelength of 500 nm or more and less than 600 nm.   When separating the Ga-containing transparent support substrate and the intermediate layer by irradiating the laminated support substrate for devices with the light, an interface between the Ga-containing transparent support substrate and the intermediate layer from the Ga-containing transparent support substrate The method for manufacturing a semiconductor device according to claim 1, wherein metal Ga is deposited on the substrate.   The method for manufacturing a semiconductor device according to claim 1, wherein the photothermal conversion layer of the intermediate layer is an amorphous silicon layer.   The method for manufacturing a semiconductor device according to claim 6, wherein the first transparent layer and the second transparent layer of the intermediate layer are each independently a silicon oxide layer or a silicon nitride layer.   The method for manufacturing a semiconductor device according to claim 1, wherein the transparent semiconductor layer is a group III nitride semiconductor layer.

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