JP2012129438A - Manufacturing method of semiconductor device, laminate support substrate for epitaxial growth, and laminate support substrate for device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which reduces the rate that light radiated for separating a support substrate and a semiconductor layer is not absorbed with a photothermal conversion layer of an intermediate layer formed between the support substrate and the semiconductor layer and is transmitted outside of the intermediate layer.SOLUTION: A manufacturing method of a semiconductor device includes: a manufacturing process of a laminate support substrate 1 having an intermediate layer 20 including a photothermal conversion layer 21 and a light transmission suppression structure layer 27; a manufacturing process of an adhered laminate substrate 2; a manufacturing process of a laminate support substrate for epitaxial growth 3; a manufacturing process of a laminate support substrate for a device 4; a manufacturing process of a multilayer wafer for the device 5; and a manufacturing process of a semiconductor device 7 including a transparent semiconductor multilayer wafer 6.

Description

  The present invention relates to a method for manufacturing a semiconductor device, a laminated support substrate for epitaxial growth manufactured by the manufacturing method, and a stacked support substrate for a device.

  A group III nitride semiconductor device in which at least one group III nitride semiconductor layer is formed on a substrate is an important semiconductor device as a blue light emitting device, an electronic device or the like. As a substrate for manufacturing such a semiconductor device, a lattice constant and a thermal expansion coefficient are close to those of a group III nitride semiconductor layer from the viewpoint of epitaxially growing a high-quality group III nitride semiconductor layer serving as a light emitting layer. A GaN substrate is preferably used.

  Since such a GaN substrate is very expensive, a thin GaN layer is pasted on a support substrate other than GaN such as a silicon (Si) substrate in Japanese Patent Application Laid-Open No. 2006-210660 (hereinafter referred to as Cited Document 1). A manufacturing method using the combined substrate and the bonded substrate has been proposed.

  In addition, as a useful method for efficiently manufacturing the semiconductor device by separating the support substrate from the GaN layer after epitaxially growing the group III nitride semiconductor layer on the GaN layer of the bonded substrate, In Japanese translations of PCT publication No. 2001-501778 (hereinafter referred to as cited reference 2), the interface between one material layer made of a group III nitride material and the other material layer made of a material other than the group III nitride material or the vicinity of the interface A method of separating one material layer and the other material layer by absorbing electromagnetic radiation (for example, light) exposed to a region of the substrate and decomposing a part of one of the material layers at the interface by the absorption. Proposed.

JP 2006-210660 A JP-T-2001-501778

  However, even if the above-mentioned bonded substrate proposed in Japanese Patent Laid-Open No. 2006-210660 (cited document 1) is used, the support substrate other than GaN and the GaN layer have different coefficients of thermal expansion. It has been difficult to epitaxially grow a high-quality group III nitride semiconductor layer on the GaN layer of the substrate.

  In the method proposed in the above Japanese translations of PCT publication No. 2001-501778 (Cited document 2), one material layer and the other material layer must be different from each other, and the above difficulty due to the difference in thermal expansion coefficient cannot be solved. . Moreover, since the exposed electromagnetic radiation (light) decomposes | disassembles the interface of the semiconductor layer used as a device later, there exists a possibility of causing deterioration of device performance.

  Therefore, an intermediate layer is introduced at the interface between the base substrate and the semiconductor layer (the GaN layer and the group III nitride semiconductor layer epitaxially grown thereon), and light having a wavelength that is not absorbed by the support substrate and the semiconductor layer inside the intermediate layer. Consider a substrate on which a material capable of absorbing water is disposed. At this time, a high-quality group III nitride semiconductor layer can be grown particularly by using a substrate (for example, a GaN substrate) having a thermal expansion coefficient that matches that of the semiconductor layer as the base substrate. Further, by using light of a wavelength that is absorbed only inside the intermediate layer and not absorbed by the support substrate and the semiconductor layer, the semiconductor layer is decomposed by disassembling at least a part of the support substrate and the semiconductor layer adjacent to the intermediate layer. The support substrate can be separated from the substrate.

  In such a case, the irradiated light is not completely absorbed in the intermediate layer, but is absorbed in a region other than the interface between the support substrate and the semiconductor layer and converted to unnecessary heat, which adversely affects device performance. There is a risk of giving.

  In view of this, the present invention eliminates the light irradiated to separate the support substrate and the semiconductor layer from the intermediate layer without being absorbed by the light-to-heat conversion layer of the intermediate layer formed between the support substrate and the semiconductor layer. An object of the present invention is to provide a method of manufacturing a semiconductor device that reduces the transmission rate.

  A manufacturing method of a semiconductor device according to the present invention includes the following steps. That is, it includes a step of forming a laminated support substrate by forming an intermediate layer including a photothermal conversion layer and a light transmission suppressing structure layer on a Ga-containing transparent support substrate. In addition, the method includes a step of manufacturing a laminated substrate by attaching a GaN substrate to an intermediate layer of the laminated supporting substrate. In addition, by separating the GaN substrate of the laminated substrate from the bonding surface with the intermediate layer at a predetermined depth, the laminated support for epitaxial growth in which the GaN layer is formed on the intermediate layer of the laminated support substrate A step of producing a substrate; In addition, the device includes a step of producing a device multilayer support substrate by epitaxially growing at least one transparent semiconductor layer on the GaN layer of the epitaxial growth support substrate. In addition, the laminated support substrate for devices can absorb the light-to-heat conversion layer at a wavelength longer than the wavelength corresponding to the lowest band gap energy among the band gap energies of the Ga-containing transparent support substrate, the GaN layer, and the transparent semiconductor layer. The method includes a step of producing a laminated wafer for a device including a transparent semiconductor layer, a GaN layer, and an intermediate layer by irradiating light of a wavelength to separate the Ga-containing transparent support substrate and the intermediate layer. Further, the method includes a step of removing the intermediate layer from the device laminated wafer to produce a semiconductor device including a transparent semiconductor layer laminated wafer including a transparent semiconductor layer and a GaN layer. According to this method, it is possible to reduce the transmittance of the light applied to the device multilayer support substrate in the intermediate layer. Thereby, even when a structure (for example, an electrode or another support substrate) that absorbs light exists on the transparent semiconductor layer, unnecessary heat generation due to absorption of light transmitted through the intermediate layer in the structure is suppressed. be able to. As a result, a high-quality semiconductor device having a high-quality semiconductor layer is obtained.

  In the method for manufacturing a semiconductor device according to the present invention, the transmittance, which is the ratio of the light emitted from the intermediate layer to the light incident on the intermediate layer of the light irradiated to the device multilayer support substrate, can be less than 20%. . Thus, as described above, unnecessary heat generation due to absorption of light transmitted through the intermediate layer in the structure in the device can be suppressed, and thus a high-quality semiconductor device having a high-quality semiconductor layer can be obtained. .

  In the method for manufacturing a semiconductor device according to the present invention, the light transmission suppressing structure layer can be formed of one or more pairs of a low refractive index layer and a high refractive index layer. Thereby, the transmittance | permeability in the intermediate | middle layer of the light irradiated to the lamination | stacking support substrate for devices can be reduced efficiently.

  In the method for manufacturing a semiconductor device according to the present invention, the ratio of the light absorption rate in the photothermal conversion layer to the total light absorptance in the photothermal conversion layer and the light transmission suppressing structure layer is determined for light incident on the intermediate layer. It can be 0.5 or more. Thereby, while separating an intermediate | middle layer and a Ga containing transparent support substrate efficiently, the transmittance | permeability in the intermediate | middle layer of the said light can be reduced efficiently.

  In the method for manufacturing a semiconductor device according to the present invention, the intermediate layer includes a first transparent layer disposed between the light transmission suppressing structure layer of the intermediate layer and the GaN substrate, a photothermal conversion layer of the intermediate layer, and Ga. And a second transparent layer disposed between the containing transparent support substrate. By including the first transparent layer in the intermediate layer, a GaN layer by migration of atoms in the photothermal conversion layer (the GaN layer is separated from the bonding surface with the intermediate layer of the GaN substrate at a predetermined depth. And the atomic diffusion into the transparent semiconductor layer can be suppressed, and damage to the GaN layer and the transparent semiconductor due to heat generated by light absorption in the photothermal conversion layer can be reduced. When the intermediate layer includes the second transparent layer, atomic diffusion into the Ga-containing transparent support substrate due to migration of atoms in the photothermal conversion layer is suppressed, and the bonding strength between the intermediate layer and the Ga-containing transparent support substrate is increased. be able to.

  In the method for manufacturing a semiconductor device according to the present invention, the thickness of the first transparent layer can be made larger than the thickness of the second transparent layer. Thereby, since the temperature of the bonding surface of the intermediate layer and the Ga-containing transparent support substrate can be made higher than the temperature of the bonding surface of the intermediate layer and the GaN layer, the bonding between the intermediate layer and the GaN layer is possible. Can be selectively separated between the intermediate layer and the Ga-containing transparent support substrate. Accordingly, since the Ga-containing transparent support substrate can be separated from the GaN layer and the transparent semiconductor layer without damaging the GaN layer and the transparent semiconductor layer, a high-quality semiconductor device having a high-quality semiconductor layer can be obtained.

  Further, in the method for manufacturing a semiconductor device according to the present invention, after the step of manufacturing the laminated support substrate for devices and before the step of manufacturing the laminated wafer for devices, the transparent support layer side of the multilayer support substrate for devices is provided. The method may further include a step of forming an electrode, and the electrode may be formed of a material that absorbs light irradiated to the laminated support substrate for devices. The light transmission suppressing structure layer included in the intermediate layer can greatly suppress the ratio of light reaching the transparent semiconductor layer and, in turn, the electrode, and the heat generated by the absorption of the light into the electrode It can be reduced to a level that does not affect

  Further, in the method for manufacturing a semiconductor device according to the present invention, after the step of manufacturing the laminated support substrate for devices and before the step of manufacturing the laminated wafer for devices, the transparent support layer side of the multilayer support substrate for devices is provided. The method further includes a step of forming either an adhesive or an adhesive layer, and either the adhesive or the adhesive layer can be formed of a material that absorbs light applied to the laminated support substrate for a device. The light transmission suppressing structure layer included in the intermediate layer can significantly suppress the ratio of light reaching the transparent semiconductor layer, and thus the adhesive and the adhesive layer, and the light is applied to the adhesive or adhesive layer. The heat generated by absorption can be reduced to a level that does not affect the device characteristics.

  Further, in the method for manufacturing a semiconductor device according to the present invention, after the step of manufacturing the laminated support substrate for devices and before the step of manufacturing the laminated wafer for devices, the transparent support layer side of the multilayer support substrate for devices is provided. The method further includes a step of arranging either the temporary support substrate or the transparent semiconductor layer laminated wafer support substrate, and either the temporary support substrate or the transparent semiconductor layer laminated wafer support substrate absorbs light irradiated to the device multilayer support substrate. It can be made of a material that The light transmission suppressing structure layer included in the intermediate layer can significantly suppress the ratio of light reaching the transparent semiconductor layer, and eventually the temporary support substrate and the transparent semiconductor layer laminated wafer support substrate, The heat generated by being absorbed by the temporary support substrate or the transparent semiconductor layer laminated wafer support substrate can be reduced to a level that does not affect the device characteristics.

In the method for producing a semiconductor device according to the present invention, the Ga-containing transparent support substrate, the transparent semiconductor layer, the first transparent layer, and the second transparent layer have a light absorption coefficient of 1 × 10 for light having a wavelength of 500 nm or more and less than 600 nm. ³ cm and less than ^-1, the photothermal conversion layer may be a light absorption coefficient for light to less than the wavelength 500nm 600nm 1 × 10 ³ cm ^-1 or more. Thus, by using laser light having a wavelength of 500 nm or more and less than 600 nm to separate the Ga-containing transparent support substrate and the intermediate layer, the Ga-containing transparent support substrate, the GaN layer, and the transparent semiconductor layer are transmitted without being absorbed. Therefore, while the Ga-containing transparent support substrate, the transparent semiconductor layer, the first transparent layer, and the second transparent layer can avoid damage caused by heat due to light absorption, the light energy absorbed by the photothermal conversion layer can be avoided. By using it as heat, the Ga-containing transparent support substrate and the intermediate layer can be separated, and as a result, the transparent support substrate can be easily separated while maintaining a high-quality semiconductor layer.

In the method for manufacturing a semiconductor device according to the present invention, the light applied to the laminated support substrate for devices can be laser light having a wavelength of 500 nm or more and less than 600 nm. Accordingly, the Ga-containing transparent support substrate and the intermediate layer can be separated without damaging the Ga-containing transparent support substrate, the GaN layer, and the transparent semiconductor layer. Here, the laser beam can be a laser beam based on the second harmonic of the Nd: YAG laser beam or the Nd: YVO ₄ laser beam. Such laser light is extremely effective in separating the Ga-containing transparent support substrate and the intermediate layer without damaging the Ga-containing transparent support substrate, the GaN layer, and the transparent semiconductor layer due to heat accompanying light absorption.

  Moreover, in the manufacturing method of the semiconductor device concerning this invention, when irradiating the said laminated support substrate for devices with the said light and isolate | separating a Ga containing transparent support substrate and an intermediate | middle layer, Ga containing transparent support substrate is contained. Metal Ga is deposited at the interface between the support substrate and the intermediate layer. By using this metal Ga layer, the Ga-containing transparent support substrate and the intermediate layer can be easily separated.

  In the method for manufacturing a semiconductor device according to the present invention, the intermediate layer preferably has a melting point of 1200 ° C. or higher. This can prevent the intermediate layer from being damaged by heat in high-temperature processes such as epitaxial growth (usually about 800 ° C. to 1100 ° C.) and thermal annealing (usually up to 700 ° C.).

In the method for manufacturing a semiconductor device according to the present invention, the photothermal conversion layer of the intermediate layer can be an amorphous silicon layer. The amorphous silicon layer has a light absorption coefficient of 1 × 10 ³ cm ⁻¹ or more for light having a wavelength of 500 nm or more and less than 600 nm and a melting point of 1200 ° C. or more, and thus is suitable as a photothermal conversion layer.

  In the method for manufacturing a semiconductor device according to the present invention, the high refractive index layer can be an amorphous silicon layer. Since the amorphous silicon layer has a high refractive index of about 4.0, it is suitable as a high refractive index layer.

In the method for manufacturing a semiconductor device according to the present invention, the low refractive index layer, the first transparent layer, and the second transparent layer can be independently any of a silicon oxide layer and a silicon nitride layer. Since the silicon oxide layer and the silicon nitride layer have low refractive indexes of about 1.48 and about 2.00, respectively, they are suitable as a low refractive index layer. In addition, each of the silicon oxide layer and the silicon nitride layer has a light absorption coefficient of less than 1 × 10 ³ cm ⁻¹ for light having a wavelength of 500 nm or more and less than 600 nm and a melting point of 1200 ° C. or more. Suitable as a transparent layer.

Furthermore, in the method for manufacturing a semiconductor device according to the present invention, the transparent semiconductor layer can be a group III nitride semiconductor layer. Since the group III nitride semiconductor layer has a light absorption coefficient of less than 1 × 10 ³ cm ⁻¹ for light having a wavelength of 500 nm or more and less than 600 nm, a high-quality semiconductor device can be obtained without being damaged by irradiation light.

  The laminated support substrate for epitaxial growth according to the present invention includes a Ga-containing transparent support substrate, an intermediate layer disposed on the Ga-containing transparent support substrate, and a GaN layer disposed on the intermediate layer. The layer includes a photothermal conversion layer and a light transmission suppressing structure layer. Such a laminated support substrate for epitaxial growth is formed by epitaxially growing at least one transparent semiconductor layer of high quality on a GaN layer to form a laminated support substrate for a device, and the Ga-containing transparent support substrate and the GaN layer are formed on the laminated support substrate for a device. And a Ga-containing transparent support substrate and an intermediate layer by irradiating light having a wavelength longer than the wavelength corresponding to the lowest band gap energy among the band gap energies of the transparent semiconductor layer and capable of being absorbed by the photothermal conversion layer. When separating the light, it is possible to reduce the transmittance of the light having the above wavelength in the intermediate layer. Thereby, even when a structure (for example, an electrode or another support substrate) that absorbs light exists on the transparent semiconductor layer, unnecessary heat generation due to absorption of light transmitted through the intermediate layer in the structure is suppressed. be able to. As a result, a high-quality semiconductor device having a high-quality semiconductor layer can be manufactured.

  In the laminated support substrate for epitaxial growth according to the present invention, the light transmission suppressing structure layer can include one or more pairs of a low refractive index layer and a high refractive index layer. Thus, when the above-mentioned laminated support substrate for devices is produced using such a laminated support substrate for epitaxial growth, and a semiconductor device is produced using the laminated support substrate for devices, the light irradiated to the laminated support substrate for devices Can be suppressed or prevented from reaching the GaN layer and the transparent semiconductor layer.

  In the laminated support substrate for epitaxial growth according to the present invention, the intermediate layer includes a first transparent layer disposed between the light transmission suppressing structure layer of the intermediate layer and the GaN layer, and a photothermal conversion layer of the intermediate layer. And a second transparent layer disposed between the Ga-containing transparent support substrate. When the intermediate layer includes the first transparent layer, the device stack support substrate is manufactured using the epitaxial growth support substrate, and the semiconductor device is manufactured using the device stack support substrate. It is possible to suppress atomic diffusion into the GaN layer and the transparent semiconductor layer due to migration of atoms in the conversion layer, and to reduce damage to the GaN layer and the transparent semiconductor due to heat generated by light absorption in the photothermal conversion layer. When the intermediate layer includes the second transparent layer, the device multilayer support substrate is manufactured using the epitaxial growth support substrate, and the semiconductor device is manufactured using the device support substrate. While suppressing atomic diffusion to the Ga-containing transparent support substrate due to migration of atoms in the conversion layer, the bonding strength between the intermediate layer and the Ga-containing transparent support substrate can be increased.

  Moreover, in the laminated support substrate for epitaxial growth according to the present invention, the thickness of the first transparent layer can be made larger than the thickness of the second transparent layer. Thereby, since the temperature of the bonding surface of the intermediate layer and the Ga-containing transparent support substrate can be made higher than the temperature of the bonding surface of the intermediate layer and the GaN layer, the bonding between the intermediate layer and the GaN layer is possible. Can be selectively separated between the intermediate layer and the Ga-containing transparent support substrate.

Moreover, in the laminated support substrate for epitaxial growth according to the present invention, the photothermal conversion layer can be an amorphous silicon layer. The amorphous silicon layer has a light absorption coefficient of 1 × 10 ³ cm ⁻¹ or more for light having a wavelength of 500 nm or more and less than 600 nm and a melting point of 1200 ° C. or more, and thus is suitable as a photothermal conversion layer.

  In the laminated support substrate for epitaxial growth according to the present invention, the high refractive index layer of the light transmission suppressing structure layer can be an amorphous silicon layer. Since the amorphous silicon layer has a high refractive index of about 4.0, it is suitable as a high refractive index layer.

In the laminated substrate for epitaxial growth according to the present invention, each of the low refractive index layer, the first transparent layer, and the second transparent layer can be independently a silicon oxide layer or a silicon nitride layer. Since the silicon oxide layer and the silicon nitride layer have low refractive indexes of about 1.48 and about 2.00, respectively, they are suitable as a low refractive index layer. In addition, each of the silicon oxide layer and the silicon nitride layer has a light absorption coefficient of less than 1 × 10 ³ cm ⁻¹ for light having a wavelength of 500 nm or more and less than 600 nm and a melting point of 1200 ° C. or more. Suitable as a transparent layer.

  The laminated support substrate for a device according to the present invention includes the above-described laminated support substrate for epitaxial growth and at least one transparent semiconductor layer epitaxially grown on the GaN layer of the laminated support substrate for epitaxial growth. Such a laminated support substrate for devices includes at least one transparent semiconductor of high quality epitaxially grown on the GaN layer, and the laminated support substrate for devices has a band gap energy of the Ga-containing transparent support substrate, the GaN layer, and the transparent semiconductor layer. When separating the Ga-containing transparent support substrate and the intermediate layer by irradiating light having a wavelength longer than the wavelength corresponding to the lowest band gap energy and capable of being absorbed by the photothermal conversion layer, The transmittance in the intermediate layer can be reduced. Thereby, even when a structure (for example, an electrode or another support substrate) that absorbs light exists on the transparent semiconductor layer, unnecessary heat generation due to absorption of light transmitted through the intermediate layer in the structure is suppressed. be able to. As a result, a high-quality semiconductor device having a high-quality semiconductor layer can be manufactured.

  In the laminated support substrate for devices according to the present invention, the photothermal conversion layer has a wavelength longer than the wavelength corresponding to the lowest band gap energy among the band gap energies of the Ga-containing transparent support substrate, the GaN layer, and the transparent semiconductor layer. When light having a wavelength that can be absorbed is applied to the laminated support substrate for a device, the transmittance, which is the ratio of the light emitted from the intermediate layer to the light incident on the intermediate layer, can be less than 20%. Thereby, when forming a semiconductor device using such a laminated support substrate for devices, it is possible to suppress or prevent light irradiated to the laminated support substrate for devices from reaching the GaN layer and the transparent semiconductor layer.

  Further, in the laminated support substrate for a device according to the present invention, the ratio of the light absorption rate in the photothermal conversion layer to the total light absorption rate in the photothermal conversion layer and the light transmission suppressing structure layer for the light incident on the intermediate layer , 0.5 or more. Thereby, when forming a semiconductor device using such a laminated support substrate for devices, the intermediate layer and the Ga-containing transparent support substrate are efficiently separated, and the transmittance of the light in the intermediate layer is efficiently reduced. Can do.

In the laminated support substrate for a device according to the present invention, the transparent semiconductor layer is a group III nitride semiconductor layer. The group III nitride semiconductor layer has a light absorption coefficient of less than 1 × 10 ³ cm ⁻¹ for light having a wavelength of 500 nm or more and less than 600 nm. A high-quality semiconductor device can be obtained without being damaged by.

  According to the present invention, the light irradiated to separate the support substrate and the semiconductor layer is not absorbed by the light-to-heat conversion layer of the intermediate layer formed between the support substrate and the semiconductor layer and is outside the intermediate layer. Semiconductor device manufacturing method for obtaining a high-quality semiconductor device having a high-quality semiconductor layer by reducing the transmission rate, and a multilayer support substrate for epitaxial growth and a multilayer support for devices suitably used in such a manufacturing method A substrate can be provided.

It is a schematic sectional drawing which shows an example of the manufacturing method of the semiconductor device concerning this invention. Here, (A) shows the manufacturing process of the laminated support substrate, (B) shows the manufacturing process of the laminated substrate, (C) shows the manufacturing process of the epitaxial growth laminated support substrate, and (D) shows The manufacturing process of the laminated support substrate for devices is shown, (E) and (F) show the manufacturing process of the laminated wafer for devices, and (G) and (H) are the manufacturing processes of the semiconductor device including the transparent semiconductor layer laminated wafer. Indicates. It is a schematic sectional drawing which shows the other example of the manufacturing method of the semiconductor device concerning this invention. Here, (A) shows a manufacturing process of a laminated support substrate for devices with two electrodes, (B) and (C) show a manufacturing process of a laminated wafer for devices with two electrodes, and (D) shows two electrodes. 2 shows a manufacturing process of the attached transparent semiconductor layer laminated wafer, and (E) and (F) show a manufacturing process of the semiconductor device. It is a schematic sectional drawing which shows the other example of the manufacturing method of the semiconductor device concerning this invention. Here, (A) shows a manufacturing process of a laminated support substrate for a device with one electrode, (B) and (C) show a manufacturing process of a laminated wafer for a device with one electrode, and (D) shows one electrode. 2 shows a manufacturing process of an attached transparent semiconductor layer laminated wafer, and (E), (F) and (G) show a manufacturing process of a semiconductor device. It is a schematic sectional drawing which shows the other example of the manufacturing method of the semiconductor device concerning this invention. Here, (A) shows the bonding process of the transparent semiconductor layer laminated wafer support substrate to the laminated support substrate for devices, (B) and (C) show the production process of the device laminated wafer with the support substrate, (D) shows the manufacturing process of the transparent semiconductor layer laminated wafer with a support substrate, (E) shows the manufacturing process of a semiconductor device. It is a schematic sectional drawing which shows the other example of the manufacturing method of the semiconductor device concerning this invention. Here, (A) and (B) show a manufacturing process of a laminated wafer for devices, (C) shows a manufacturing process of a transparent semiconductor layer laminated wafer, and (D), (E), (F1) and (F2). ) Shows a manufacturing process of a semiconductor device. It is a schematic sectional drawing which shows an example of the light transmission suppression structure layer contained in the intermediate | middle layer in the manufacturing method of the semiconductor device concerning this invention. It is a graph which shows the relationship between the layer structure in the intermediate | middle layer containing the light transmission suppression structure layer shown in FIG. 6, the refractive index of each layer, and the square of the electric field strength of irradiated light. It is a schematic sectional drawing which shows the other example of the light transmission suppression structure layer contained in the intermediate | middle layer in the manufacturing method of the semiconductor device concerning this invention. It is a graph which shows the relationship between the layer structure in the intermediate | middle layer containing the light transmission suppression structure layer shown in FIG. 8, the refractive index of each layer, and the square of the electric field strength of irradiated light. It is a schematic sectional drawing which shows an example of the intermediate | middle layer referred by the manufacturing method of the semiconductor device concerning this invention. It is a graph which shows the relationship between the layer structure in the intermediate | middle layer shown in FIG. 10, the refractive index of each layer, and the square of the electric field strength of irradiated light.

[Embodiment 1]
Referring to FIG. 1, in a method for manufacturing a semiconductor device according to an embodiment of the present invention, an intermediate layer 20 a including a photothermal conversion layer 21 and a light transmission suppressing structure layer 27 is formed on a Ga-containing transparent support substrate 10. And a step of manufacturing the laminated support substrate 1 (FIG. 1A). In addition, the method includes a step of manufacturing the laminated substrate 2 by attaching the GaN substrate 30 to the intermediate layer 20a of the laminated support substrate 1 (FIG. 1B). Further, the GaN layer 30a is formed on the intermediate layer 20 of the laminated support substrate 1 by separating the GaN substrate 30 of the laminated substrate 2 on the surface P having a predetermined depth from the bonding surface with the intermediate layer 20. A step of producing the epitaxial growth support substrate 3 thus prepared (FIG. 1C). In addition, the device includes a step of fabricating the device multilayer support substrate 4 by epitaxially growing at least one transparent semiconductor layer 40 on the GaN layer 30a of the epitaxial growth support substrate 3 (FIG. 1D). Further, the laminated support substrate 4 for devices has a wavelength longer than the wavelength corresponding to the lowest band gap energy among the band gap energies of the Ga-containing transparent support substrate 10, the GaN layer 30a, and the transparent semiconductor layer 40, and a photothermal conversion layer. By irradiating light L having a wavelength that can be absorbed by the Ga-containing transparent support substrate 10 and the intermediate layer 20, the device laminated wafer 5 including the transparent semiconductor layer 40, the GaN layer 30 a, and the intermediate layer 20 is separated. Is provided (FIGS. 1E and 1F). In addition, the intermediate layer 20 is removed from the device laminated wafer 5 to prepare a semiconductor device 7 including the transparent semiconductor layer laminated wafer 6 including the transparent semiconductor layer 40 and the GaN layer 30a (FIG. 1 (G) and (H)). By providing these steps, it is possible to reduce the transmittance in the intermediate layer of light irradiated to the laminated support substrate for devices, and the transparent semiconductor layer laminated wafer without damaging the GaN layer 30a and the transparent semiconductor layer 40 Therefore, a high quality semiconductor device having a high quality semiconductor layer can be obtained.

(Lamination support substrate manufacturing process)
Referring to FIG. 1A, the laminated support substrate 1 is manufactured by forming an intermediate layer 20 a including a photothermal conversion layer 21 and a light transmission suppressing structure layer 27 on a Ga-containing transparent support substrate 10. Is called.

  The method for forming the intermediate layer 20a on the Ga-containing transparent support substrate 10 is not particularly limited, and a plasma CVD (chemical vapor deposition) method, a sputtering method, a vacuum evaporation method, or the like is used.

  In the laminated support substrate 1 obtained in this step, the light irradiated on the substrate is absorbed by the light-to-heat conversion layer 21 included in the intermediate layer 20a, whereby heat is stored in the intermediate layer 20a including the light-to-heat conversion layer 21. The surface of the Ga-containing transparent support substrate 10 in contact with the intermediate layer 20a is decomposed by this heat, and the intermediate layer 20a and the Ga-containing transparent support substrate 10 can be separated.

  Moreover, the laminated support substrate 1 obtained by this process can reflect most of the light incident on the intermediate layer 20a by providing the light transmission suppressing structure layer 27 on the intermediate layer 20a. Thereby, for the light incident on the intermediate layer 20a, the light transmittance in the intermediate layer 20a including the light transmission suppressing structure layer 27 is compared with the light transmittance in the intermediate layer not including the light transmission suppressing structure layer 27. Can be lower. Such transmittance is preferably less than 20%. Here, strictly speaking, the transmittance of the light irradiated to the substrate in the intermediate layer means the transmittance of the light irradiated in the intermediate layer perpendicular to the main surface of the substrate.

  The light transmission suppressing structure layer 27 included in the intermediate layer 20a is not particularly limited as long as it reduces the transmittance of light irradiated to the substrate, but a pair of the low refractive index layer 27k and the high refractive index layer 27h. It is preferably formed of one or more pairs. A resonant structure is formed by the photothermal conversion layer 21 and a pair of one or more pairs of the low refractive index layer 27k and the high refractive index layer 27h, and the reflectance is improved by utilizing the interference caused by the refraction of light to reduce the transmittance. be able to. For example, referring to FIG. 1A, in the intermediate layer 20a, from the Ga-containing transparent support substrate 10 side to the photothermal conversion layer 21, a pair of low refractive index layer 27k and high refractive index layer 27h (light transmission suppressing structure layer) ) Is arranged. In the intermediate layer 20a, a photothermal conversion layer, and two pairs of a low refractive index layer and a high refractive index layer (light transmission suppression structure layer) are arranged from the Ga-containing transparent support substrate side.

  The intermediate layer 20a further includes a transparent layer (for example, the first transparent layer 23a and the second transparent layer in FIG. 1A) on one side or both sides of the light transmission suppressing structure layer 27 and the photothermal conversion layer 21. Can be included. For example, referring to FIG. 1A, the intermediate layer 20a includes, in order from the GaN-containing transparent support substrate 10 side, a second transparent layer 25, a photothermal conversion layer 21, a low refractive index layer 27k, and a high refractive index layer 27h. , And a first transparent layer 23a. The intermediate layer includes, in order from the GaN-containing transparent support substrate side, the second transparent layer, the photothermal conversion layer, the low refractive index layer, the high refractive index layer, the low refractive index layer, the high refractive index layer, and the first transparent layer. Layers can be included. The first transparent layer 23a is bonded to the GaN substrate 30 in a later step (FIG. 1B) and is positioned between the GaN substrate 30 and the photothermal conversion layer 21 as the first transparent layer 23. become.

  The intermediate layer 20a including the photothermal conversion layer 21 is at a high temperature as described above. Further, when the transparent semiconductor layer 40 is epitaxially grown, it is exposed to a high temperature of 800 ° C. or higher, and in some cases, near 1100 ° C. For these reasons, the intermediate layer 20a including the photothermal conversion layer 21 preferably has high heat resistance, and preferably has a melting point of, for example, 1200 ° C. or higher.

Here, in the method of manufacturing a semiconductor device, from the viewpoint of effectively using light having a wavelength of 500 nm or more and less than 600 nm as light irradiated to the substrate, the Ga-containing transparent support substrate 10 has a light absorption coefficient for light having a wavelength of 500 nm or more and less than 600 nm. Is preferably 1 × 10 ³ cm ⁻¹ or more, for example, a GaN supporting substrate is preferable. In addition, the photothermal conversion layer 21 preferably has a light absorption coefficient of 1 × 10 ³ cm ⁻¹ or more for light having a wavelength of 500 nm or more and less than 600 nm, for example, an amorphous silicon layer. The low refractive index layer 27k of the light transmission suppressing structure layer 27 is preferably either a silicon oxide layer (refractive index: about 1.48) or a silicon nitride layer (refractive index: about 2.00). The high refractive index layer 27h of the light transmission suppressing structure layer 27 is preferably an amorphous silicon layer (refractive index: about 4.0). The first transparent layers 23a, 23 and the second transparent layer 25 preferably have a light absorption coefficient of less than 1 × 10 ³ cm ⁻¹ for light having a wavelength of 500 nm or more and less than 600 nm. It is preferable that either the layer or the silicon nitride layer. As will be described later, for example, the photothermal conversion layer 21 is preferably an amorphous silicon layer.

(Manufacturing process of laminated substrate)
With reference to FIG. 1B, the manufacturing process of the laminated laminated substrate 2 is performed by bonding a GaN substrate 30 to the intermediate layer 20 a of the laminated supporting substrate 1. Here, the method of bonding the GaN substrate 30 to the intermediate layer 20a of the laminated support substrate 1 is not particularly limited, and the surfaces of the bonding surfaces are cleaned and bonded directly, and then heated to 700 ° C to 1000 ° C. Direct bonding method that joins together, metal film is formed, alloy bonding method that joins the metal of the metal film by alloying by raising the temperature while making contact, activated the bonding surface with plasma or ions, etc. The surface activation method is preferably used.

  In addition, the bonded surface of the GaN substrate 30 is formed with an outermost layer of the intermediate layer 20a of the laminated support substrate 1 from the viewpoint of reducing heat transmitted from the photothermal conversion layer to the GaN substrate 30 when the light L is irradiated and increasing bonding strength. It is preferable that layers of the same material are formed chemically. For example, when the outermost layer of the intermediate layer 20a of the laminated support substrate 1 is the first transparent layer 23a, the first transparent layer 23b that is a layer of the same material as the first transparent layer 23a is used. Is preferably formed on the bonding surface of the GaN substrate 30. The first transparent layer 23 b of the GaN substrate 30 is bonded to the first transparent layer 23 a of the intermediate layer 20 a of the laminated support substrate 1, so that the first transparent layer is interposed between the photothermal conversion layer 21 and the GaN substrate 30. 23 is formed.

  Thus, the photothermal conversion layer 21, the light transmission suppressing structure layer 27, the first transparent layer 23 disposed between the light transmission suppressing structure layer 27 and the GaN substrate 30, the light heat converting layer 21, and the Ga-containing transparent support. An intermediate layer including a second transparent layer 25 disposed between the substrate 10 and the light transmission suppressing structure layer 27 formed of one or more pairs of a low refractive index layer 27k and a high refractive index layer 27h. 20 is formed. Here, in the light transmission suppressing structure layer 27, the pair of the low refractive index layer 27k and the high refractive index layer 27h is arranged in the order of the low refractive index layer 27k and the high refractive index layer 27h from the photothermal conversion layer 21 side.

(Manufacturing process of laminated support substrate for epi growth)
Referring to FIG. 1C, in the process of manufacturing the epitaxial growth laminated support substrate 3, the GaN substrate 30 of the laminated laminated substrate 2 is placed on the surface P having a predetermined depth from the bonded surface with the intermediate layer 20. This is done by separating. Through this step, the epitaxial growth laminated support substrate 3 in which the GaN layer 30a is formed on the intermediate layer 20 of the laminated support substrate 1 is obtained.

  The method for separating the GaN substrate 30 from the bonding surface with the intermediate layer 20 on the surface P having a predetermined depth is not particularly limited, and a method for cutting the GaN substrate 30 on the surface P, the laminated support substrate 1 or the like. In order to form a fragile region, the GaN substrate 30 into which ions have been implanted into the surface P before being bonded to the laminated support substrate 1 is bonded to the stacked support substrate 1, and then heat and / or stress is applied to the ions. A method of separating on the surface P embrittled by implantation is used. By such a method, the GaN layer 30a having a thickness of 0.05 μm to 100 μm can be formed on the intermediate layer 20 of the laminated support substrate 1.

  Here, the Ga-containing transparent support substrate 10 has a thermal expansion coefficient that is the same as or close to the thermal expansion coefficient of the GaN layer 30a from the viewpoint of not generating cracks in the GaN layer 30a during epitaxial growth or annealing. A GaN support substrate having a main surface having the same plane orientation as that of the main surface of the GaN layer 30a is particularly preferable.

(Manufacturing process of laminated support substrate for devices)
Referring to FIG. 1D, the process for manufacturing the device multilayer support substrate 4 is performed by epitaxially growing at least one transparent semiconductor layer 40 on the GaN layer 30 a of the epitaxial growth support substrate 3.

  Here, by using the GaN-containing transparent support substrate 10 whose thermal expansion coefficient is the same as or close to the thermal expansion coefficient of the GaN layer 30a, at least one layer of high quality can be obtained without generating cracks during epitaxial growth or annealing. The transparent semiconductor layer 40 can be formed. From this point of view, the Ga-containing transparent support substrate 10 is preferably a GaN support substrate having a main surface with the same plane orientation as that of the main surface of the GaN layer 30a, for example.

  The method for epitaxially growing at least one transparent semiconductor layer 40 on the GaN layer 30a of the epitaxial growth laminated support substrate 3 is not particularly limited, but from the viewpoint of growing a high-quality transparent semiconductor layer, MOCVD (organometallic) A vapor phase method such as a chemical vapor deposition method, an MBE (molecular beam epitaxy) method or an HVPE (hydride vapor phase epitaxy) method is preferably used.

The at least one transparent semiconductor layer 40 epitaxially grown on the epitaxial growth laminated support substrate 3 has the same lattice constant as that of the GaN layer 30a from the viewpoint of growing the high-quality transparent semiconductor layer 40 without generating cracks or the like. It is preferable that the thermal expansion coefficients are the same as or similar to those of the GaN layer 30a and the Ga-containing transparent support substrate 10. The transparent semiconductor layer 40 has a light absorption coefficient of 1 × 10 ³ for light having a wavelength of 500 nm or more and less than 600 nm from the viewpoint of avoiding damage to the transparent semiconductor layer when the substrate is irradiated with light having a wavelength of 500 nm or more and less than 600 nm. Preferably it is less than cm ⁻¹ . Further, from the viewpoint of not absorbing the irradiation light transmitted through the intermediate layer, the transparent semiconductor layer 40 is light having a shorter wavelength than the light irradiated to the laminated support substrate 4 for devices and a peak wavelength of not less than 300 nm and not more than 550 nm. It is preferable to include a light emitting layer 45 that emits. From these viewpoints, the transparent semiconductor layer 40 is preferably a group III nitride semiconductor layer, for example.

(Process for producing laminated wafers for devices)
Referring to FIGS. 1E and 1F, the device laminated wafer 5 is manufactured in such a manner that the device laminated support substrate 4 has a band gap between the Ga-containing transparent support substrate 10, the GaN layer 30a, and the transparent semiconductor layer 40. Irradiating light L having a wavelength longer than the wavelength corresponding to the lowest bandgap energy among the energies and capable of being absorbed by the photothermal conversion layer, thereby separating the Ga-containing transparent support substrate 10 and the intermediate layer 20 from each other. Is done. Through this process, the device laminated wafer 5 including the transparent semiconductor layer 40, the GaN layer 30a, and the intermediate layer 20 is obtained. Here, as illustrated in FIG. 1E, the light L is irradiated from the Ga-containing transparent support substrate 10 side of the device multilayer support substrate 4.

  In this step, the energy per photon of light irradiated on the device multilayer support substrate 4 is the lowest band gap energy among the band gap energies of the Ga-containing transparent support substrate 10, the GaN layer 30a, and the transparent semiconductor layer 40. Since it is lower than energy, light is not absorbed by the Ga-containing transparent support substrate 10, the GaN layer 30a, and the transparent semiconductor layer 40, but is transmitted. Thereby, in the Ga containing transparent support substrate 10, the GaN layer 30a, and the transparent semiconductor layer 40, damage caused by heat generated due to unnecessary light absorption can be avoided.

  The light irradiated to the device multilayer support substrate 4 is absorbed by the photothermal conversion layer 21 and converted into heat. With this heat, the surface of the Ga-containing transparent support substrate 10 that contacts the intermediate layer 20 is decomposed, and the laminated support substrate 4 for devices is separated between the Ga-containing transparent support substrate 10 and the intermediate layer 20. Thus, the device laminated wafer 5 including the transparent semiconductor layer 40, the GaN layer 30a, and the intermediate layer 20 is obtained.

The light irradiated to the device multilayer support substrate 4 has a wavelength longer than the wavelength corresponding to the lowest band gap energy among the band gap energies of the Ga-containing transparent support substrate 10, the GaN layer 30a, and the transparent semiconductor layer 40. Although there is no particular limitation, in order to efficiently separate the Ga-containing transparent support substrate 10 and the intermediate layer 20 with relatively low input energy, laser light with a wavelength of 500 nm or more and less than 600 nm is preferable, for example, a wavelength of 808 nm. Nd: YAG laser light having a wavelength of 1064 nm excited by the semiconductor laser (where Nd: YAG is formed of Y (yttrium), A (aluminum), G (garnet) added with Nd (neodymium) Crystal)) or Nd: YVO ₄ laser light (where Nd: YVO ₄ is Nd (Neodymium) added Y (yttrium) · V (vanadium) · O ₄ (oxide) or Y (yttrium) · VO ₄ (vanadate)) is a so-called LiB ₃ O ₅ A laser beam having a wavelength of 532 nm converted by an SHG (Second Harmonic Generation) crystal is preferably used. The light having this wavelength can constitute the Ga-containing transparent support substrate 10, the GaN layer 30a, and the transparent semiconductor layer 40. For example, a group III nitride such as GaN, InGaN, AlGaN, the first transparent layer 23, and the second transparent layer For example, it is not absorbed by silicon oxide that can constitute the transparent layer 25, but is preferably absorbed by, for example, amorphous silicon that can constitute the photothermal conversion layer 21.

Here, when a GaN support substrate is used as the Ga-containing transparent support substrate 10, the surface in contact with the intermediate layer in the GaN support substrate is decomposed into metal Ga and nitrogen (N ₂ ) gas by irradiation with the light L, and the GaN support is supported. Metal Ga is deposited between the substrate and the intermediate layer. Since metallic Ga melts at 29.8 ° C., the GaN support substrate and the intermediate layer are separated by heating to a temperature higher than this temperature.

In the laminated support substrate 4 for devices, from the viewpoint of forming a high-quality transparent semiconductor layer 40 on the GaN layer 30a, the Ga-containing transparent support substrate 10 is a GaN support substrate, and the transparent semiconductor layer 40 is a group III nitride semiconductor. A layer is preferred. In such a case, the GaN layer 30a, the GaN support substrate (Ga-containing transparent support substrate 10), and the group III nitride semiconductor layer (transparent semiconductor layer 40) usually have a light absorption coefficient of 1 × for light with a wavelength of 500 nm or more and less than 600 nm. Less than 10 ³ cm ⁻¹ . Therefore, for the separation of the GaN support substrate and the intermediate layer, the light irradiated to the laminated support substrate 4 for devices is the GaN layer 30a, the GaN support substrate (Ga-containing transparent support substrate 10), and the group III nitride semiconductor layer. From the viewpoint of reducing damage to the (transparent semiconductor layer 40), it is preferably a laser beam having a wavelength of 500 nm or more and less than 600 nm.

The intermediate layer 20 becomes a high temperature during the separation between the Ga-containing transparent support substrate 10 and the intermediate layer 20. Further, when the transparent semiconductor layer 40 is epitaxially grown, it is exposed to a high temperature of 800 ° C. or higher, and in some cases, near 1100 ° C. For these reasons, the intermediate layer 20 preferably has high heat resistance, for example, preferably has a melting point of 1200 ° C. or higher. That is, the photothermal conversion layer 21 preferably has high heat resistance, and preferably has a melting point of 1200 ° C. or higher, for example. Moreover, when the light irradiated to the laminated support substrate 4 for devices is a laser beam having a wavelength of 500 nm or more and less than 600 nm, the photothermal conversion layer 21 preferably absorbs light in the wavelength region efficiently, so that the wavelength of 500 nm. The light absorption coefficient for light of less than 600 nm is preferably 1 × 10 ³ cm ⁻¹ or more. As a layer made of a material that satisfies the above requirements, the photothermal conversion layer 21 is preferably, for example, an amorphous silicon layer.

  In the device multilayer support substrate 4, the intermediate layer 20 including the photothermal conversion layer 21 is in contact with the Ga-containing transparent support substrate 10 and the GaN layer 30 a. For this reason, when the photothermal conversion layer 21 is heated to a high temperature by irradiation with the light L described above, the heat is in contact with not only the Ga-containing transparent support substrate 10 but also the GaN layer 30a and the GaN layer 30a. 40 and may damage the GaN layer 30a and the transparent semiconductor layer 40. Such damage to the GaN layer 30a and the transparent semiconductor layer 40 is reduced, and the intermediate layer 20 and the Ga-containing transparent support substrate 10 are reliably separated while maintaining the bonding between the intermediate layer 20 and the GaN layer 30a. Therefore, it is preferable that the intermediate layer 20 further includes a first transparent layer 23 disposed between the photothermal conversion layer 21 of the intermediate layer 20 and the GaN layer 30a. Further, the first transparent layer 23 is formed by diffusing atoms into the GaN layer 30a and the transparent semiconductor layer 40 due to migration of atoms in the photothermal conversion layer 21 (for example, Si atoms in the amorphous silicon layer), and a GaN layer during light irradiation. The damage given to 30a and the transparent semiconductor layer 40 is reduced and the bonding strength between the intermediate layer 20 and the GaN layer 30a is also increased.

The first transparent layer 23 is not particularly limited, in order not to cause thermal damage to the GaN layer 30a and the transparent semiconductor layer 40 due to heat generation accompanying unnecessary light absorption and / or stress damage due to expansion due to heat. The transparency similar to that of the Ga-containing transparent support substrate 10, the GaN layer 30a, and the transparent semiconductor layer 40, that is, the light absorption coefficient for light having a wavelength of 500 nm to 600 nm is preferably less than 1 × 10 ³ cm ⁻¹ . Further, the first transparent layer 23 is in contact with the photothermal conversion layer 21 that is at a high temperature as described above. Further, when the transparent semiconductor layer 40 is epitaxially grown, it is exposed to a high temperature of 800 ° C. or higher, and in some cases, near 1100 ° C. For these reasons, the first transparent layer 23 preferably has high heat resistance, for example, preferably has a melting point of 1200 ° C. or higher. As a material that satisfies the above requirements, the first transparent layer is particularly preferably, for example, either a silicon oxide layer or a silicon nitride layer.

  Further, from the viewpoint of suppressing atomic diffusion due to migration of atoms in the photothermal conversion layer 21 (for example, Si atoms in the amorphous silicon layer) and increasing the bonding strength between the intermediate layer 20 and the Ga-containing transparent support substrate 10, the intermediate layer 20. Preferably further includes a second transparent layer 25 disposed between the photothermal conversion layer 21 of the intermediate layer 20 and the Ga-containing transparent support substrate 10.

The second transparent layer 25 is not particularly limited, but it does not cause thermal damage to the GaN layer 30a and the transparent semiconductor layer 40 due to heat generation accompanying unnecessary light absorption and / or stress damage due to expansion due to heat. The transparency similar to that of the Ga-containing transparent support substrate 10, the GaN layer 30a, and the transparent semiconductor layer 40, that is, the light absorption coefficient for light having a wavelength of 500 nm to 600 nm is preferably less than 1 × 10 ³ cm ⁻¹ . Further, the second transparent layer 25 is in contact with the photothermal conversion layer 21 that is at a high temperature as described above. Further, when the transparent semiconductor layer 40 is epitaxially grown, it is exposed to a high temperature of 800 ° C. or higher, and in some cases, near 1100 ° C. For these reasons, the second transparent layer 25 preferably has high heat resistance, for example, preferably has a melting point of 1200 ° C. or higher. As a material that satisfies the above requirements, the second transparent layer is particularly preferably, for example, either a silicon oxide layer or a silicon nitride layer.

  When both the first transparent layer 23 and the second transparent layer 25 are present, the thickness of the first transparent layer 23 is preferably larger than the thickness of the second transparent layer 25. Thereby, the temperature of the bonding surface of the intermediate layer 20 and the Ga-containing Ga-containing transparent support substrate 10 can be made higher than the temperature of the bonding surface of the intermediate layer 20 and the GaN layer 30a. Using this, the temperature of the bonding surface between the intermediate layer 20 and the Ga-containing transparent support substrate 10 is higher than the temperature at which the metal Ga can be formed, and the temperature of the bonding surface between the intermediate layer 20 and the GaN layer 30a is metal. By making the temperature lower than the temperature at which Ga can be formed, metal Ga is not formed on the bonding surface of the intermediate layer 20 and the GaN layer 30a, but only on the bonding surface of the intermediate layer 20 and the Ga-containing transparent support substrate 10. Metal Ga60 can be formed. Thus, the device laminated wafer 5 can be formed by selective separation of the bonding surfaces of the intermediate layer 20 of the device laminated support substrate 4 and the Ga-containing transparent support substrate 10.

  In this way, the device laminated wafer 5 including the transparent semiconductor layer 40 and the GaN layer 30a is obtained. Here, the device laminated wafer 5 has, on the surface of the intermediate layer 20, a metal Ga 60 formed at the interface between the Ga-containing transparent support substrate 10 and the intermediate layer 20 when the Ga-containing transparent support substrate 10 is separated.

  Note that the device laminated wafer 5 obtained in this step and the transparent semiconductor layer laminated wafer 6 (referred to as a laminated wafer of the GaN layer 30a and the transparent semiconductor layer 40) obtained in the next step have extremely low mechanical strength. . For this reason, referring to FIG. 1 (E), FIG. 2 (B), FIG. 3 (B), FIG. 4 (A) and FIG. 4 (B), the obtained device laminated wafer 5 and transparent semiconductor layer laminated wafer 6 are obtained. In order to reinforce the mechanical strength, the temporary support substrate 50 or the transparent semiconductor layer laminated wafer support substrate 70 is attached to the device in order to reinforce the mechanical strength of the transparent semiconductor layer laminated wafer 6 of the device laminated support substrate 4 before this step. The laminated support substrate 4 is preferably bonded to the transparent semiconductor layer 40 side. In the bonding of the temporary support substrate 50 or the transparent semiconductor layer laminated wafer support substrate 70, the adhesive 51 or the conductive adhesive layers 85, 85a, and 85b are used.

  Depending on the structure of the semiconductor device to be manufactured, an electrode (for example, a p-electrode) may be formed on the transparent semiconductor layer 40 of the device multilayer support substrate 4 before the step of manufacturing the device multilayer wafer 5 from the device multilayer support substrate 4. 80) may be formed.

  In the case as described above, the electrode (p-electrode 80), the adhesive 51, and the adhesive layer (the conductive adhesive layer 85) are formed on the transparent semiconductor layer 40 side of the laminated support substrate 4 for devices before the light irradiation. , 85a, 85b) and at least one of the temporary support substrate 50 and the transparent semiconductor layer laminated wafer support substrate 70 is disposed.

  When the light is irradiated from the Ga-containing transparent support substrate 10 side of the laminated support substrate 4 for devices as described above, the light that has not been absorbed by the intermediate layer 20 (particularly, the photothermal conversion layer 21) out of the irradiated light. The transparent semiconductor layer 40 is transmitted through the electrode (p-electrode 80), the adhesive 51 and the adhesive layer (conductive adhesive layers 85, 85a, 85b), and the temporary support substrate 50 and the transparent semiconductor layer laminated wafer. It reaches one of the support substrates 70.

  At this time, the transparent semiconductor layer 40 is transmitted therethrough, and any of the electrode (p-electrode 80), the adhesive 51 and the adhesive layer (conductive adhesive layers 85, 85a, 85b), the temporary support substrate 50, and the transparent semiconductor layer If at least any one of the laminated wafer support substrates 70 is formed of the light absorbing material, the quality of the transparent semiconductor layer 40 may be deteriorated due to the heat generated by the light absorption.

  For example, in FIGS. 2A, 3A, and 4A, electrodes (p-electrodes 80) are formed on the transparent semiconductor layer 40 of the device multilayer support substrates 4A, 4B, and 4C before the light irradiation. N-electrode 90) is formed. Here, the material forming the electrode is, for example, nickel (Ni), platinum (Pt), palladium (Pd), gold (Au), silver (Ag), indium (In), antimony (Sb), chromium (Cr ), Titanium (Ti), aluminum (Al), tin oxide (SnO) and at least one selected from the group consisting of zinc oxide (ZnO), the electrode is irradiated to the substrate and is not absorbed by the intermediate layer Since the light transmitted through is absorbed, there is a fear of the above.

  That is, in the present embodiment, after the step of manufacturing the laminated support substrate 4 for devices and before the step of manufacturing the laminated wafer 5 for devices, an electrode is provided on the transparent semiconductor layer 40 side of the laminated support substrate 4 for devices. The method further includes a step of forming, and is suitably used when the electrode is formed of the above-described material that absorbs light applied to the device multilayer support substrate 4.

  Further, in FIGS. 1E and 5A, an adhesive 51 for bonding the temporary support substrate 50 to the transparent semiconductor layer 40 of the laminated support substrate 4 for devices before the light irradiation is disposed. In 2 (B), the temporary support substrate 50 is bonded to the transparent semiconductor layer 40 of the laminated support substrate 4 for devices before the light irradiation and the electrodes (p-electrode 80, n-electrode 90) formed thereon. 3B, the temporary support substrate 50 is attached to the electrode (p-electrode 80) formed on the transparent semiconductor layer 40 of the laminated support substrate 4 for a device before the light irradiation in FIG. The adhesive 51 for bonding is arrange | positioned, and the electrode (p-electrode 80) formed in the transparent semiconductor layer 40 of the laminated support substrate 4 for devices before the said light irradiation in FIG. 4 (A) and (B). Transparent semiconductor layer laminated wafer on the side Adhesive layer for bonding the support substrate 70 (conductive adhesive layer valves 85, 85a, 85b) are formed. Here, any of the adhesive 51 and the adhesive layer (conductive adhesive layers 85, 85a, 85b) is made of titanium (Ti), gold (Au), silver (Ag), nickel (Ni), aluminum (Al), When at least one selected from the group consisting of zinc (Zn), tin (Sn) and germanium (Ge) is included, the electrode is irradiated to the substrate and absorbs the transmitted light without being absorbed by the intermediate layer. There is a risk of the above.

  That is, in the present embodiment, the adhesive is applied to the transparent semiconductor layer 40 side of the device laminated support substrate 4 after the step of producing the device laminated support substrate 4 and before the step of producing the device laminated wafer 5. 51 and an adhesive layer (conductive adhesive layers 85, 85a, 85b) are further formed, and any one of the adhesive 51 and the adhesive layer (conductive adhesive layers 85, 85a, 85b) is laminated for a device. It is preferably used when the support substrate 4 is formed of the above material that absorbs light irradiated.

  Further, in FIGS. 1E, 2B, 3B, and 5A, the transparent semiconductor layer 40 side of the device multilayer support substrates 4, 4A, 4B before the light irradiation is performed. A temporary support substrate 50 is disposed with an adhesive 51 interposed therebetween, and in FIG. 4B, an electrode (p-electrode) formed on the transparent semiconductor layer 40 of the laminated support substrate for devices 4 before the light irradiation in FIG. A transparent semiconductor layer laminated wafer support substrate 70 is formed with a conductive adhesive layer 85 interposed therebetween. Here, one of the temporary support substrate 50 and the transparent semiconductor layer laminated wafer support substrate 70 is silicon (Si), germanium (Ge), gallium arsenide (GaAs), indium phosphide (InP), or silicon carbide (SiC). And at least one selected from the group consisting of molybdenum (Mo), tungsten (W), and aluminum nitride (AlN), the electrode irradiates the substrate and absorbs the transmitted light without being absorbed by the intermediate layer. Therefore, there is a fear of the above. Further, the temporary support substrate 50 and the transparent semiconductor layer laminated wafer support substrate 70 may be a single crystal, a polycrystalline body such as a sintered body, or an amorphous body.

  That is, in the present embodiment, after the step of manufacturing the laminated support substrate 4 for devices and before the step of manufacturing the laminated wafer 5 for devices, temporary support is provided on the transparent support layer 40 side of the laminated support substrate 4 for devices. The method further includes the step of disposing one of the substrate 50 and the transparent semiconductor layer laminated wafer support substrate 70, and either the temporary support substrate 50 or the transparent semiconductor layer laminated wafer support substrate 70 is irradiated to the device multilayer support substrate. It is preferably used when formed of the above material that absorbs light.

  Here, in this embodiment, in order to reduce the transmittance in the intermediate layer 20 of the light irradiated to the laminated support substrate 4 for devices, the intermediate layer 20 includes the light transmission suppression structure layer in addition to the photothermal conversion layer 21. 27.

  The transmittance in the intermediate layer 20 including the light transmission suppressing structure layer 27 of the light applied to the device multilayer support substrate 4 can be made lower than the transmittance in the intermediate layer not including the light transmission suppressing structure. From the viewpoint of keeping the quality of the transparent semiconductor layer 40 high, the transmittance is preferably less than 20%, more preferably less than 12%, still more preferably less than 6%, and most preferably less than 1%. Here, strictly speaking, the transmittance of the light irradiated to the substrate in the intermediate layer means the transmittance of the light irradiated in the intermediate layer perpendicular to the main surface of the substrate.

  The light transmission suppressing structure layer 27 included in the intermediate layer 20 is not particularly limited as long as it reduces the transmittance of light irradiated to the substrate, but a pair of the low refractive index layer 27k and the high refractive index layer 27h. It is preferably formed of one or more pairs. A resonant structure is formed by the photothermal conversion layer 21 and a pair of one or more pairs of the low refractive index layer 27k and the high refractive index layer 27h, and the reflectance is improved by utilizing the interference caused by the refraction of light to reduce the transmittance. be able to. For example, referring to FIG. 1 (F) and FIG. 6, a pair of low refractive index layer 27 k and high refractive index are formed as the photothermal conversion layer 21 and the light transmission suppressing structure layer 27 from the Ga-containing transparent support substrate 10 side in the intermediate layer 20. The rate layer 27h is arranged in order. Referring to FIG. 8, in the intermediate layer 20, two pairs of low refractive index layers 27k and high refractive index layers 27h are formed as the photothermal conversion layer 21 and the light transmission suppressing structure layer 27 from the Ga-containing transparent support substrate 10 side 0. Be placed.

  Further, with respect to the light incident on the intermediate layer 20 of the light irradiated on the device multilayer support substrate 4, the light in the photothermal conversion layer 21 with respect to the total absorption rate of the light in the photothermal conversion layer 21 and the light transmission suppressing structure layer 27. The ratio of the absorptance is preferably 0.5 or more, more preferably 0.66 or more, and further preferably 0.85 or more, from the viewpoint of selective separation at the interface between the Ga-containing transparent support substrate 10 and the intermediate layer 20. . Here, the absorptance in the intermediate layer of light irradiated to the substrate strictly means the absorptance in the intermediate layer of light irradiated perpendicularly to the main surface of the substrate.

  Further, the intermediate layer 20 has a transparent layer (for example, in FIGS. 1B to 1E, the first transparent layer 23 and the second transparent layer) on one side or both sides of the light transmission suppressing structure layer 27 and the photothermal conversion layer 21. Layer). For example, referring to FIG. 1E and FIG. 6, the intermediate layer 20 a serves as the second transparent layer 25, the photothermal conversion layer 21, and the light transmission suppression structure layer 27 in order from the GaN-containing transparent support substrate 10 side. The low refractive index layer 27k and the high refractive index layer 27h, and the first transparent layer 23a can be included. Referring to FIG. 8, the intermediate layer 20 includes, in order from the GaN-containing transparent support substrate 10 side, a second transparent layer 25, a photothermal conversion layer 21, a low refractive index layer 27 k as a light transmission suppressing structure layer 27, The high refractive index layer 27h, the low refractive index layer 27k, the high refractive index layer 27h, and the first transparent layer can be included.

  1 to 6 and 8, in the intermediate layer 20, the thickness of the first transparent layer 23 is preferably larger than the thickness of the second transparent layer 25. Thereby, the temperature of the bonding surface of the intermediate layer 20 and the Ga-containing Ga-containing transparent support substrate 10 can be made higher than the temperature of the bonding surface of the intermediate layer 20 and the GaN layer 30a. Using this, the temperature of the bonding surface between the intermediate layer 20 and the Ga-containing transparent support substrate 10 is higher than the temperature at which the metal Ga can be formed, and the temperature of the bonding surface between the intermediate layer 20 and the GaN layer 30a is metal. By making the temperature lower than the temperature at which Ga can be formed, metal Ga is not formed on the bonding surface of the intermediate layer 20 and the GaN layer 30a, but only on the bonding surface of the intermediate layer 20 and the Ga-containing transparent support substrate 10. Metal Ga60 can be formed. Thus, the device laminated wafer 5 can be formed by selective separation of the bonding surfaces of the intermediate layer 20 of the device laminated support substrate 4 and the Ga-containing transparent support substrate 10.

  In this way, the device laminated wafer 5 including the transparent semiconductor layer 40 and the GaN layer 30a is obtained. Here, the device laminated wafer 5 has, on the surface of the intermediate layer 20, a metal Ga 60 formed at the interface between the Ga-containing transparent support substrate 10 and the intermediate layer 20 when the Ga-containing transparent support substrate 10 is separated.

(Transparent semiconductor layer laminated wafer manufacturing process)
Referring to FIG. 1G, the manufacturing process of the transparent semiconductor layer laminated wafer 6 is performed by removing the intermediate layer 20 from the device laminated wafer 5. Through this process, the transparent semiconductor layer laminated wafer 6 including the transparent semiconductor layer 40 and the GaN layer 30a is obtained. The method for removing the intermediate layer 20 from the device laminated wafer 5 is not particularly limited, and methods such as wet etching and dry etching generally used in semiconductor processes can be used.

(Semiconductor device fabrication process)
Referring to FIG. 1H, the manufacturing process of the semiconductor device 7 is performed by bonding a transparent semiconductor layer laminated wafer support substrate 70 to the transparent semiconductor layer laminated wafer 6. Through this process, the semiconductor device 7 is obtained.

[Embodiment 2]
Referring to FIG. 1, an epitaxial growth support substrate 3 according to another embodiment of the present invention includes a Ga-containing transparent support substrate 10 and an intermediate layer 20 disposed on the Ga-containing transparent support substrate 10. , A GaN layer 30a disposed on the intermediate layer 20, and the intermediate layer 20 includes a photothermal conversion layer 21 and a light transmission suppression structure layer 27.

  As described in the first embodiment, the laminated support substrate 3 for epitaxial growth according to the present embodiment can epitaxially grow at least one transparent semiconductor layer 40 of good quality without generating cracks or the like on the GaN layer 30a. it can. In addition, the epitaxial growth support substrate 3 is heated to a high temperature by absorbing the light L irradiated by the photothermal conversion layer 21 of the intermediate layer 20, and the Ga-containing transparent support substrate 10 in contact with the intermediate layer 20 by this high heat. It can be separated between the intermediate layer 20 and the Ga-containing transparent support substrate 10 by utilizing the fact that the surface is decomposed.

  In addition, as described in the first embodiment, the epitaxial growth stacked support substrate 3 according to the present embodiment includes the light transmission suppressing structure layer 27 in addition to the photothermal conversion layer 21 in the intermediate layer 20. When the contained transparent support substrate 10 and the intermediate layer 20 are separated, the transmittance of the light having the above wavelength in the intermediate layer can be reduced.

  Further, in the epitaxial growth laminated support substrate 3 of the present embodiment, the light transmission suppressing structure layer 27 is not particularly limited as long as it reduces the transmittance of the light L irradiated to the substrate, but the low refractive index layer. It is preferable that one or more pairs of 27k and high refractive index layer 27h are formed. A resonant structure is formed by the photothermal conversion layer 21 and a pair of one or more pairs of the low refractive index layer 27k and the high refractive index layer 27h, and the reflectance is improved by utilizing the interference caused by the refraction of light to reduce the transmittance. be able to.

  The intermediate layer 20 includes a first transparent layer 23 disposed between the light transmission suppressing structure layer 27 of the intermediate layer 20 and the GaN layer 30a, a photothermal conversion layer 21 of the intermediate layer 20, and a Ga-containing transparent support substrate. And a second transparent layer 25 disposed between the first and second layers. When the intermediate layer 20 includes the first transparent layer 23, the above-mentioned laminated support substrate 4 for devices is produced using the laminated support substrate 3 for epitaxial growth, and a semiconductor device is produced using the laminated support substrate 4 for devices. In this case, atomic diffusion into the GaN layer 30a and the transparent semiconductor layer 40 due to migration of atoms in the photothermal conversion layer 21 is suppressed, and the GaN layer 30a and the transparent semiconductor layer due to heat generated by light absorption in the photothermal conversion layer 21 are suppressed. Damage to 40 can be reduced. By including the second transparent layer 25 in the intermediate layer 20, the device multilayer support substrate 4 is produced using the epitaxial growth support substrate 3, and the semiconductor device 7 is fabricated using the device laminate support substrate 4. During fabrication, atomic diffusion into the GaN layer 30a and the transparent semiconductor layer 40 due to migration of atoms in the photothermal conversion layer 21 can be suppressed, and the bonding strength between the intermediate layer 20 and the Ga-containing transparent support substrate 10 can be increased. it can.

  Here, the thickness of the first transparent layer 23 is preferably larger than the thickness of the second transparent layer 25. Thereby, since the temperature of the bonding surface of the intermediate layer 20 and the Ga-containing transparent support substrate 10 can be made higher than the temperature of the bonding surface of the intermediate layer 20 and the GaN layer 30a, the intermediate layer 20 and the GaN layer It is possible to selectively separate between the intermediate layer 20 and the Ga-containing transparent support substrate 10 while maintaining the bonding with 30a.

The photothermal conversion layer is preferably an amorphous silicon layer. The amorphous silicon layer has a light absorption coefficient of 1 × 10 ³ cm ⁻¹ or more for light having a wavelength of 500 nm or more and less than 600 nm and a melting point of 1200 ° C. or more, and thus is suitable as a photothermal conversion layer.

  The high refractive index layer 27h of the light transmission suppressing structure layer 27 is preferably an amorphous silicon layer. Since the amorphous silicon layer has a high refractive index of about 4.0, it is suitable as a high refractive index layer.

In addition, the low refractive index layer 27k, the first transparent layer 23, and the second transparent layer 25 are preferably each independently a silicon oxide layer or a silicon nitride layer. Since the silicon oxide layer and the silicon nitride layer have low refractive indexes of about 1.48 and about 2.00, respectively, they are suitable as a low refractive index layer. In addition, each of the silicon oxide layer and the silicon nitride layer has a light absorption coefficient of less than 1 × 10 ³ cm ⁻¹ for light having a wavelength of 500 nm or more and less than 600 nm and a melting point of 1200 ° C. or more. Suitable as a transparent layer.

[Embodiment 3]
Referring to FIG. 1, a laminated support substrate 4 for a device according to another embodiment of the present invention is epitaxially grown on an epitaxial growth support substrate 3 and a GaN layer 30 a of the epitaxial growth support substrate 3. And at least one transparent semiconductor layer 40. The device laminated support substrate 4 of this embodiment includes at least one high-quality transparent semiconductor layer 40 epitaxially grown on the GaN layer 30a. The device-containing laminated support substrate 4 includes a Ga-containing transparent support substrate 10 and a GaN layer. The Ga-containing transparent support substrate 10 is irradiated with light having a wavelength longer than the wavelength corresponding to the lowest bandgap energy among the bandgap energy of 30a and the transparent semiconductor layer 40 and the light-heat conversion layer 21 can absorb. When the intermediate layer 20 is separated from the intermediate layer 20, a high-quality semiconductor device having a high-quality semiconductor layer can be manufactured by reducing the transmittance of the light in the intermediate layer 20.

  In the laminated support substrate 4 for a device according to the present embodiment, the photothermal energy is longer than the wavelength corresponding to the lowest band gap energy among the band gap energies of the Ga-containing transparent support substrate 10, the GaN layer 30a, and the transparent semiconductor layer 40. When light having a wavelength that can be absorbed by the conversion layer 21 is applied to the laminated support substrate 4 for a device, the light in the intermediate layer 20 is the ratio of the light emitted from the intermediate layer 20 to the light incident on the intermediate layer 20. The transmittance is preferably less than 20%, more preferably less than 12%, even more preferably less than 6%, and most preferably less than 1%. Here, strictly speaking, the transmittance of the light irradiated to the substrate in the intermediate layer means the transmittance of the light irradiated in the intermediate layer perpendicular to the main surface of the substrate. Thereby, when forming a semiconductor device using the laminated support substrate for devices, the transmittance of the light irradiated to the laminated support substrate for devices in the intermediate layer can be efficiently reduced.

  Further, with respect to the light incident on the intermediate layer of the light irradiated to the device multilayer support substrate in the light-to-heat conversion layer 21 and the light transmission suppressing structure layer 27, the total absorption rate of the light in the light-to-heat conversion layer and the light transmission suppressing structure layer is The ratio of the light absorption rate in the photothermal conversion layer is preferably 0.5 or more, more preferably 0.66 or more, and further preferably 0.85 or more. It can be. Thereby, when forming a semiconductor device using such a laminated support substrate for devices, the intermediate layer and the Ga-containing transparent support substrate are efficiently separated, and the transmittance of the light in the intermediate layer is efficiently reduced. Can do.

The transparent semiconductor layer 40 is preferably a group III nitride semiconductor layer. Since the group III nitride semiconductor layer has a light absorption coefficient of less than 1 × 10 ³ cm ⁻¹ for light having a wavelength of 500 nm or more and less than 600 nm, irradiation is performed when a semiconductor device is formed using the laminated support substrate 4 for devices. A high quality semiconductor device 7 can be obtained without being damaged by light.

[Example O]
Transmission, which is the ratio of the light emitted from the intermediate layer to the light incident on the intermediate layer of the substrate, is the difference in the structure of the intermediate layer of the laminated support substrate for devices (specifically, the presence or absence of the light transmission suppressing structure) The influence on the rate can be evaluated by an electromagnetic field calculation method, and the structure of the intermediate layer can be optimized based on the evaluation.

  Examples of laminated support substrates for devices that include a photothermal conversion layer and a light transmission suppressing structure layer in the intermediate layer (Examples O1 and O2), and devices that include the light heat conversion layer in the intermediate layer and do not include the light transmission suppressing structure layer For a laminated support substrate example (example OR1), the transmittance T, which is the ratio of the light emitted from the intermediate layer to the light incident on the intermediate layer of the substrate, the intermediate layer for the light incident on the intermediate layer of the substrate The reflectance R, which is the ratio of the light reflected in the substrate, and the absorption ratio A, which is the ratio of the light absorbed in the intermediate layer to the light incident on the intermediate layer of the substrate, were calculated by the electromagnetic field calculation method. Specifically, for each of Example A1, Example A2, and Example AR1, the intermediate of plane wave-like light L having a wavelength of 532 nm incident perpendicularly to the main surface of the substrate from the Ga-containing transparent support substrate side of the laminated support substrate for devices Light transmittance T, reflectance R, and absorption rate A in the layer were calculated by the scattering matrix method.

  For the electromagnetic field calculation using the above scattering matrix method, the details thereof are omitted, but the refractive index, extinction coefficient and film thickness of the Ga-containing transparent support substrate, intermediate layer and transparent semiconductor layer of the laminated support substrate for devices, From the wavelength of incident light, the incident angle, and the polarization, the electromagnetic field distribution in each of the Ga-containing transparent support substrate, the intermediate layer, and the transparent semiconductor layer constituting the one-dimensional laminated structure can be obtained. In this calculation, light is assumed to be perpendicularly incident on the Ga-containing transparent support substrate side main surface of the device multilayer support substrate, as described above, and therefore P-polarized light and S-polarized light are degenerated. Only S-polarized light was considered.

At this time, the electromagnetic field distribution is distributed only in the stacking direction (this is the x direction). The electric field component E _J (x) in a certain layer (referred to as layer J) in the one-dimensional stacked structure includes a complex amplitude F _{J of} light traveling in the + x direction, a complex amplitude R _{J of} light traveling in the −x direction, and an imaginary number. Using unit i and wave number k _J ,
E _J (x) = F _J exp {−ik _J x} + R _J exp {ik _J x} (1)
It can be expressed as Here, the wave number k _J, using the wavelength λ of the refractive index n _J and extinction coefficient kappa _J and optical layer J, the following equation (2)
k _J = 2π (k _J + iκ _J ) / λ (2)
Is defined as follows.

Now, assuming that the incident layer (corresponding to a Ga-containing transparent support substrate) is layer 0 (J = 0) and the GaN layer as the output layer is layer N (J = N), the light traveling in the + x direction in layer 0 is using the complex amplitude F ₀ and the complex amplitudes R ₀ of the light traveling in the -x direction, and the complex amplitude F _N of light traveling in the + x direction in layer N, the transmittance of the light in the intermediate layer T, reflectance R and Absorption rate A is expressed by the following equations (3) to (5), respectively.
T = | F _N / F ₀ | ² (3)
R = | R ₀ / F ₀ | ² (4)
A = 1-TR (5)
Define as follows.

Further, the ratio (ratio) η _{J ′} of the light absorption rate in a certain layer J ′ having light absorption to the total light absorption rate of the entire intermediate layer is expressed by the following equation (6).
η _{J ′} = ∫ _{J ′} | E | ² · κ _{J ′} dx / ΣJ _′ (∫ _{J ′} | E | ² · κ _{J ′} dx) (6)
Define as follows. Here, the integral with respect to ∫ _{J ′} means the integral over a certain layer J ′, and Σ _{J ′} means the total sum with respect to the corresponding layer J.

The light absorption coefficient α and the extinction coefficient κ are expressed by the following formula (7) between the light wavelength λ _{0 in} vacuum.
α = 4π / λ ₀ × κ (7)
There is a relationship.

(Example O1)
1. Structure of laminated support substrate for device Referring to FIG. 6, the laminated support substrate for device of Example O1 is a Ga-containing transparent support substrate 10 having a thickness of 400 μm and a GaN support substrate (refractive index is 2.5, extinction coefficient). Is 0), the following intermediate layer 20 is formed. That is, a 10 nm thick SiO ₂ layer (refractive index: 1.48, extinction coefficient: 0) is formed as the second transparent layer 25 on the GaN-containing transparent support substrate 10, and the photothermal conversion layer 21 is formed thereon. An amorphous silicon layer having a thickness of 40 nm (having a refractive index of 4 and an extinction coefficient of 0.25 (absorption coefficient of 5.9 × 10 ⁴ cm ⁻¹ )) is formed thereon, and the light transmission suppressing structure layer 27 is low. A pair of a 100 nm thick SiO ₂ layer that is the refractive index layer 27k and a 20 nm thick amorphous silicon layer that is the high refractive index layer 27h is formed, and a first transparent layer 23 having a thickness of 325 nm is formed thereon. A SiO ₂ layer is formed. On the intermediate layer 20, a GaN layer having a thickness of 3 μm is formed as the GaN layer 30 a and the transparent semiconductor layer 40. The above structures are summarized in Table 1.

2. Calculation of transmittance, reflectance, and absorptance of irradiation light in the intermediate layer Light L having a wavelength of 532 nm perpendicular to the main surface of the substrate from the GaN substrate (Ga-containing transparent support substrate 10) side of the laminated support substrate for devices having the above structure The light transmittance T, reflectance R, and absorption rate A in the intermediate layer were calculated. The results are summarized in Table 1 and illustrated in FIG. In Table 1, the light transmittance T, the reflectance R, and the absorption rate A are all represented by two significant digits.

(Example O2)
1. Structure of Device Multilayer Support Substrate Referring to FIG. 8, the device multilayer support substrate of Example O2 has the following intermediate layer 20 formed on a 400 μm thick GaN support substrate which is a Ga-containing transparent support substrate 10. Yes. That is, a 10 nm thick SiO ₂ layer is formed as the second transparent layer 25 on the GaN-containing transparent support substrate 10, and a 35 nm thick amorphous silicon layer is formed thereon as the photothermal conversion layer 21. Two pairs of a SiO ₂ layer having a thickness of 80 nm that is the low refractive index layer 27k and an amorphous silicon layer having a thickness of 35 nm that is the high refractive index layer 27h are formed as the light transmission suppressing structure layer 27, and the first pair is formed thereon. A SiO ₂ layer having a thickness of 265 nm is formed as the transparent layer 23. On the intermediate layer 20, a GaN layer having a thickness of 3 μm is formed as the GaN layer 30 a and the transparent semiconductor layer 40. The above structures are summarized in Table 2.

2. Calculation of transmittance, reflectance, and absorptance of irradiation light in the intermediate layer Light L having a wavelength of 532 nm perpendicular to the main surface of the substrate from the GaN substrate (Ga-containing transparent support substrate 10) side of the laminated support substrate for devices having the above structure The light transmittance T, reflectance R, and absorption rate A in the intermediate layer were calculated. The results are summarized in Table 2 and illustrated in FIG. In Table 2, the light transmittance T, reflectance R, and absorptance A are all represented by two significant digits.

(Example OR1)
1. Structure of Device Multilayer Support Substrate With reference to FIG. 10, the device multilayer support substrate of Example OR1 has the following intermediate layer 20 formed on a 400 μm thick GaN support substrate which is a Ga-containing transparent support substrate 10. Yes. That is, a 10 nm thick SiO ₂ layer is formed as the second transparent layer 25 on the GaN-containing transparent support substrate 10, and a 45 nm thick amorphous silicon layer is formed thereon as the photothermal conversion layer 21. A SiO ₂ layer having a thickness of 445 nm is formed as the first transparent layer 23. On the intermediate layer 20, a GaN layer having a thickness of 3 μm is formed as the GaN layer 30 a and the transparent semiconductor layer 40. That is, the laminated support substrate for a device of Example OR1 does not include the light transmission suppressing structure layer. The above structures are summarized in Table 3.

2. Calculation of transmittance, reflectance, and absorptance of irradiation light in the intermediate layer Light L having a wavelength of 532 nm perpendicular to the main surface of the substrate from the GaN substrate (Ga-containing transparent support substrate 10) side of the laminated support substrate for devices having the above structure The light transmittance T, reflectance R, and absorption rate A in the intermediate layer were calculated. The results are summarized in Table 3 and illustrated in FIG. In Table 3, the light transmittance T, reflectance R, and absorptance A are all represented by two significant digits.

  Referring to Tables 1 to 3 and FIGS. 7, 9 and 11, the light applied to the substrate had a transmittance of 36% (example OR1) in the intermediate layer not including the light transmission suppressing structure layer. The transmittance (example O1) in the intermediate layer including the light transmission suppressing structure formed by the pair of low-refractive index layers and the high-refractive index layer is greatly reduced to 10%, and the two pairs of low-refractive index layers and The transmittance (Example O2) in the intermediate layer including the light transmission suppressing structure formed of the high refractive index layer was further greatly reduced to 0.79%. This is because the light applied to the substrate has a reflectance of 45% (example OR1) in the intermediate layer that does not include the light transmission suppressing structure layer, whereas a pair of low-refractive index layers and a high refractive index. The reflectance (example O1) in the intermediate layer including the light transmission suppressing structure formed by the layer is greatly increased to 69%, and the light transmission suppressing structure formed by two pairs of the low refractive index layer and the high refractive index layer is provided. This is considered to be because the reflectance (example O2) in the intermediate layer containing the material increased further to 75%.

Further, in Example O1, the absorption rate in the light-to-heat conversion layer with respect to the total absorption rate (the sum of A ₁ and A ₂ in FIG. 7) in the light-to-heat conversion layer and the light transmission suppressing structure layer of the intermediate layer with respect to the light irradiated on the substrate The ratio of (A ₁ in FIG. 7) was as extremely high as 0.90, and it was found that effective separation between the Ga-containing transparent support substrate and the intermediate layer was achieved. Also in Example O2, the light-to-heat conversion layer with respect to the total absorptance (the sum of A ₁ , A ₂ and A ₃ in FIG. 7) in the light-to-heat conversion layer and the light transmission suppressing structure layer of the intermediate layer for the light irradiated on the substrate The ratio of absorptivity (A ₁ in FIG. 7) was as extremely high as 0.87, indicating that effective separation between the Ga-containing transparent support substrate and the intermediate layer was achieved.

[Example A]
(Example A1)
1. Production of Laminated Support Substrate With reference to FIG. 1A, a GaN support substrate having a diameter of 2 inches (5.08 cm) and a thickness of 500 μm was prepared as a Ga-containing transparent support substrate 10 by the HVPE method. Such a GaN support substrate had a Ga atom surface with one main surface being a (0001) plane, an N atom surface with another main surface being a (000-1) plane, and both main surfaces were mirror-finished.

An SiO ₂ layer (second transparent layer 25) having a thickness of 10 nm and an amorphous silicon having a thickness of 40 nm are formed on the Ga atom surface of the GaN support substrate (Ga-containing transparent support substrate 10) as an intermediate layer 20a by plasma CVD. Layer (photothermal conversion layer 21), 100 nm thick SiO ₂ layer (low refractive index layer 27k of light transmission suppressing structure layer 27), 20 nm thick amorphous silicon layer (high refractive index layer 27h of light transmission suppressing structure layer 27) ) And a 125 nm thick SiO ₂ layer (first transparent layer 23a) were sequentially deposited to obtain a laminated support substrate 1. The plasma CVD conditions are as follows: in the deposition of the SiO ₂ layer, RF is 50 W, the flow rate of SiH ₄ gas diluted to 8% by volume with Ar gas is 50 sccm (1 sccm is 1 cm ³ per minute converted to the standard state) N ₂ O gas flow rate is 460 sccm, chamber pressure is 80 Pa, stage temperature is 250 ° C., and amorphous silicon layer deposition is RF 50 W, diluted to 8 vol% with Ar gas The SiH ₄ gas flow rate was 200 sccm, the chamber pressure was 80 Pa, and the stage temperature was 250 ° C.

Further, as a GaN substrate 30 for forming the GaN layer 30a, a GaN substrate having a diameter of 2 inches (5.08 cm) and a thickness of 500 μm formed by the HVPE method was prepared. The GaN substrate 30 has a Ga atom surface whose one main surface is a (0001) plane, an N atom surface whose other main surface is a (000-1) plane, and both main surfaces are mirror-finished. First, a 200 nm thick SiO ₂ layer (first transparent layer 23b) was deposited on the surface of N atoms of the GaN substrate 30 by plasma CVD.

Next, hydrogen ions were implanted from the SiO ₂ layer (first transparent layer 23 b) side of the GaN substrate 30. The hydrogen ion implantation conditions were an acceleration voltage of 50 keV and a dose of 7 × 10 ¹⁷ cm ⁻² . Thus, the GaN substrate 30 implanted with hydrogen ions had a dose peak on the plane P having a depth of about 200 nm from the N atom surface. This dose was measured by performing SIMS (secondary ion mass spectrometer) analysis in the depth direction from the ion implantation side of the GaN substrate ion-implanted in the same batch as a reference.

Adhesion between the GaN support substrate (Ga-containing transparent support substrate 10) and the SiO ₂ layer (second transparent layer 25) of the laminated support substrate 1 obtained above, and the GaN substrate 30 and the SiO ₂ layer in the GaN substrate 30 ( In order to improve the adhesion with the first transparent layer 23b), annealing was performed at 700 ° C. to 1000 ° C. for 10 minutes in a nitrogen atmosphere, and then the main surfaces of the SiO ₂ layers of both substrates were washed. Specifically, the main surface of the SiO ₂ layer was cleaned by putting both substrates into a dry etching apparatus and exposing them to plasma using oxygen (O ₂ ) gas as a raw material. The plasma conditions at this time were RF of 100 W, O ₂ gas flow rate of 50 sccm, and chamber pressure of 6.7 Pa.

2. Next, referring to FIG. 1B, the laminated substrate 1 was deposited on the SiO ₂ layer (first transparent layer 23a) of the intermediate layer 20 of the laminated support substrate 1 and the GaN substrate 30. The SiO ₂ layer (first transparent layer 23 b), the crystal orientation of one main surface ((0001) plane) of the GaN support substrate (Ga-containing transparent support substrate 10) of the laminated support substrate 1, and one main GaN substrate 30. By superimposing the crystal orientation of the surface ((0001) plane) to coincide with each other and pressing with a load of 7 MPa (1400 kgf per 2 inch substrate) with a press device (wafer bonder), the SiO ₂ layers are joined together, The laminated support substrate 1 and the GaN substrate 30 were bonded together. The thus obtained laminated laminated substrate 2 was gradually heated from room temperature (25 ° C.) to 300 ° C. in the air over 3 hours, thereby increasing the bonding strength at the bonding interface. Here, in the laminated substrate 2, the thickness of the SiO ₂ layer (first transparent layer 23) disposed between the amorphous silicon layer (photothermal conversion layer 21) of the intermediate layer 20 and the GaN substrate is 325 nm. there were.

3. Next, referring to FIG. 1C, the laminated laminated substrate 2 was heated to 500 ° C. and stress was applied obliquely to the main surface of the substrate. Thermal stress is applied to the surface P having a depth of about 200 nm from the surface of the N atom, which is embrittled by implantation of a large amount of hydrogen ions in the GaN substrate 30 of the laminated substrate 2, and the GaN substrate 30 is laminated on the surface P described above. The GaN layer 30a having a thickness of 200 nm and the remaining GaN substrate 30b joined to the intermediate layer 20 of the support substrate 1 were separated. Thus, the epitaxial growth laminated support substrate 3 in which the GaN layer 30a having a thickness of 200 nm was formed on the intermediate layer 20 of the laminated support substrate 1 was obtained. Here, the remaining GaN substrate 30b separated from the GaN layer 30a can be reused many times after the surface state (flatness, etc.) of the separation surface is adjusted by a technique such as polishing. As a result, the cost per semiconductor device can be finally reduced.

4). Next, referring to FIG. 1D, a GaN layer having a thickness of 2 μm is formed as a transparent semiconductor layer 40 on the GaN layer 30a of the epitaxial growth support substrate 3 by MOCVD. A buffer layer 41, an n-GaN layer 43 having a thickness of 0.5 μm, three pairs of InGaN layers as a light emitting layer 45 having a thickness of 70 nm, a multiple quantum well layer composed of GaN layers, and a p-GaN layer 47 having a thickness of 80 nm. The layers were deposited in this order. In this way, the laminated support substrate 4 for devices was obtained.

Here, in the epitaxial growth of the transparent semiconductor layer 40 by the MOCVD method described above, the temperature of the epitaxial growth laminated support substrate 3 was about 1000 ° C. The epitaxial growth laminated support substrate 3 includes an SiO ₂ layer (first transparent layer 23, low refractive index) as an intermediate layer 20 between the GaN support substrate (Ga-containing transparent support substrate 10) and the GaN layer 30a. Layer 27k and the second transparent layer 25) and an amorphous silicon layer (the photothermal conversion layer 21 and the high refractive index layer 27h), and the SiO ₂ layer and the amorphous silicon layer are thermally expanded with the GaN support substrate and the GaN layer 30a. The coefficient was different. However, the total thickness of the intermediate layer 20 in this embodiment is 300 nm, and the transparent semiconductor layer 40 that has been epitaxially grown is analyzed by X-ray diffraction, and as a result, the lattice constant almost the same as that of the GaN layer 30a is obtained. It can be said that it has quality. If the total thickness of the intermediate layer 20 is 1 μm or less, since the generated stress is small, the quality of the epitaxially grown transparent semiconductor layer 40 is maintained high. Next, after the device laminated support substrate 4 obtained was taken out from the CVD apparatus, it was annealed at 700 ° C. in a nitrogen / oxygen atmosphere having a total pressure of 1 atm and oxygen of 16 vol%.

5. Next, with reference to FIG. 2 (A), two electrodes were formed on the device multilayer support substrate 4 as described below. A p-electrode resist mask (not shown) is formed by photolithography on the p-GaN layer 47 of the transparent semiconductor layer 40 of the laminated support substrate 4 for devices, and a Ni layer having a thickness of 5 nm is formed by vacuum evaporation. After forming an Au layer having a thickness of 11 nm in this order, an unnecessary portion of the electrode material was removed by removing the p-electrode resist mask, whereby a p-electrode 80 was formed.

  Next, a p-electrode protecting resist mask (not shown) is formed on the p-electrode 80 and its peripheral region by photolithography, and the main surface of the transparent semiconductor layer 40 on the p-GaN layer 47 side using chlorine gas. The mesa etching was performed to a depth of 250 nm to remove the p-GaN layer 47, the light emitting layer 45, and the n-GaN layer 43 in a partial region of the main surface, and the GaN buffer layer 41 was exposed. Thereafter, the p-electrode protecting resist mask was removed. On the exposed GaN buffer layer 41, an n-electrode 90 composed of a 20 nm thick Ti layer and a 300 nm thick Au layer was formed by the same method as the formation of the p-electrode. In order to obtain an ohmic junction between the p-electrode and the n-electrode and the semiconductor layer, the obtained substrate was annealed at 500 ° C. in a nitrogen / oxygen atmosphere having a total pressure of 1 atm and oxygen of 0.4 vol%. Thus, a laminated support substrate 4A for devices with two electrodes was obtained. Thereafter, although not shown, a pad electrode layer composed of a 20 nm thick Ti layer and a 300 nm thick Au layer may be formed on each of the p-electrode and the n-electrode by a lift-off method. .

  As described above, high temperature annealing is required to form a semiconductor device. In the laminated support substrate for a device for producing a semiconductor device, if the Ga-containing transparent support substrate 10, the GaN layer 30a, and the transparent semiconductor layer 40 are materials having different chemical species and different thermal expansion coefficients, peeling at the bonding interface, Alternatively, cracks or the like may occur in the GaN layer 30a and the transparent semiconductor layer 40, but the Ga-containing transparent support substrate 10 (GaN support substrate) and the transparent semiconductor layer 40 (GaN buffer layer 41, n-GaN layer 43, 3 pairs) The light emitting layer 45 and the p-GaN layer 47), which are multiple quantum well layers composed of InGaN layers and GaN layers, are made of the same or similar chemical species as the GaN layer 30a, and the thermal expansion coefficients of those substrates and layers Are the same or approximate to each other, so that peeling at the bonding interface, GaN layer 30a, transparent semiconductor layer 40, etc. Such as the rack can be prevented.

  On the other hand, since a GaN substrate is very expensive, in order to lower the unit price of a semiconductor device as a final product, as described below, a laminated support substrate for devices is changed from a GaN support substrate (Ga-containing transparent support substrate 10). ) Must be separated. The separated GaN support substrate (Ga-containing transparent support substrate 10) can be used again as a GaN support substrate by treating the main surface by the method described below. Thus, by repeatedly using one GaN substrate, the unit price of the semiconductor device as the final product can be reduced.

6). Next, referring to FIG. 2B, an adhesive is formed on the formation surface of the p-electrode 80 and the n-electrode 90 of the laminated support substrate 4A for devices with two electrodes. 51 was spin-coated, and a temporary support sapphire plate (temporary support substrate 50) was attached using a wafer bonder in an atmosphere heated to 200 ° C. in a vacuum. The adhesive 51 can be softened again by heating to 200 ° C. in consideration of separating the temporary support sapphire plate from the wafer in a later process, for example, Wafer Bond HT-10 manufactured by Brewer Sciences, 10 was chosen.

Next, the laminated support substrate 4A for devices with two electrodes on which the sapphire plate for temporary support (temporary support substrate 50) was attached was set in a laser annealing apparatus. This laser annealing apparatus can generate a green laser pulse having a wavelength of 532 nm using an Nd: YAG laser and a LiB ₃ O ₅ SHG crystal. This laser annealing apparatus is originally an apparatus for rapidly heating amorphous silicon to several hundred to several hundreds of degrees Celsius by absorbing light of the above wavelength into amorphous silicon, and changing it to polysilicon. is there.

Using the laser annealing apparatus described above, two electrodes are attached under the conditions that the output is 0.2 W, the repetition period is 10 kHz, the pulse width is 10 ns, the spot size on the amorphous silicon layer is 25 nm in diameter, and the scan speed is 100 mm / s. Laser was irradiated from the GaN support substrate (Ga-containing transparent support substrate 10) side of the device multilayer support substrate 4A, and the GaN support substrate of the device multilayer support substrate 4A with a two-electrode diameter of 2 inches was sequentially scanned. The light having a wavelength of 532 nm is emitted from a GaN support substrate (Ga-containing transparent support substrate 10), an SiO ₂ layer (first transparent layer 23 and second transparent layer 25), a GaN layer 30a, a transparent semiconductor layer 40, and an adhesive. 51 and the temporary support sapphire plate (temporary support substrate 50) or the like, but were efficiently absorbed only by the amorphous silicon layer (photothermal conversion layer 21). Thereby, the temperature of the amorphous silicon layer (photothermal conversion layer 21) increased rapidly.

As a result, the bonding surface with the intermediate layer 20 in the GaN support substrate (Ga-containing transparent support substrate 10) located at a short distance of the amorphous silicon layer (photothermal conversion layer 21) has a surface temperature exceeding 900 ° C., Pyrolysis into metal Ga and nitrogen (N ₂ ) gas. On the other hand, the thermal decomposition temperature was not reached on the bonding surface of the GaN layer 30a with the intermediate layer 20. This is because between the GaN layer 30a and the amorphous silicon layer (photothermal conversion layer 21), SiO ₂ (having a thermal conductivity lower than that of GaN (thermal conductivity is about 100 W · m ⁻¹ · K ⁻¹ )). Since an SiO ₂ layer (first transparent layer 23) having a thickness of 230 nm formed with a thermal conductivity of about 10 W · m ⁻¹ · K ⁻¹ ) is interposed, an amorphous silicon layer (photothermal conversion layer 21) It can be considered that the GaN layer 30a did not reach the thermal decomposition temperature because most of the amount of heat generated in the above was diffused to the GaN support substrate (Ga-containing transparent support substrate 10) side. For the same reason, the temperature of the adhesive 51 portion was suppressed to 100 ° C. or less, and the adhesive 51 was not softened or carbonized. Thus, the metal Ga60 could be deposited only on the bonding surface of the GaN support substrate (Ga-containing transparent support substrate 10) with the intermediate layer 20.

  Next, referring to FIGS. 2B and 2C, the laminated support substrate 4A for a device with two electrodes on which the metal Ga60 is deposited is placed on a hot plate (not shown) at 60 ° C. The GaN support substrate (Ga-containing transparent support substrate 10) was separated from the intermediate layer 20 by sliding (sliding off) the GaN support substrate in a state where Ga (melting point: 29.8 ° C.) was melted. Thus, a laminated wafer for devices 5A with two electrodes including the transparent semiconductor layer 40, the GaN layer 30a, and the intermediate layer 20 was obtained. Note that the separated GaN support substrate can be reused by subjecting the main surface to a treatment such as polishing and etching.

  Here, the laminated support substrate 4A for a device with two electrodes of this example A1 has an intermediate layer having the same structure as the laminated support substrate for a device of example O1 of Example O. The laser pulse light applied to the device multilayer support substrate 4A is absorbed by the photothermal conversion layer 21 of the intermediate layer 20, and the laser pulse light incident on the intermediate layer without being absorbed by the photothermal conversion layer is transmitted through the intermediate layer 20. Since the transmittance of the light reflected by the suppression structure layer 27 is reduced to 10%, the irradiated light is transmitted through the transparent semiconductor layer 40 to pass through electrodes (p-electrode 80, n-electrode 90), adhesive 51, and temporary. Absorption by the support substrate 50 or the like was suppressed, and the occurrence of damage to the transparent semiconductor layer 40 due to heat generated by the light absorption was suppressed.

7). Step of Producing Transparent Semiconductor Layer Laminated Wafer with Two Electrodes Next, referring to FIG. 2D, the metal Ga60 on the intermediate layer 20 of the laminated wafer for devices 5A with two electrodes is washed with hydrochloric acid to obtain an intermediate layer. 20 (SiO ₂ layer and amorphous silicon layer partially polysiliconized) was removed by wet etching using a hydrofluoric acid nitric acid mixed solution. Thus, a transparent semiconductor layer laminated wafer 6A with two electrodes including the transparent semiconductor layer 40 and the GaN layer 30a was obtained.

8). Next, referring to FIG. 2 (E), a transparent semiconductor layer laminated wafer supporting substrate prepared separately on the GaN layer 30a of the transparent semiconductor layer laminated wafer 6A with two electrodes as described below. 70 was bonded.

Here, the prepared transparent semiconductor layer laminated wafer support substrate 70 was a sapphire substrate having a thickness of 150 μm. For the bonding, after cleaning the main surface of the GaN layer 30a of the transparent semiconductor layer laminated wafer 6A with two electrodes, it is put into a plasma etching apparatus, and nitrogen plasma (the plasma conditions are RF 100W and N ₂ gas flow rate 50sccm). The main surface was cleaned by exposure to a chamber pressure of 13.3 Pa.). The main surface of the sapphire substrate (transparent semiconductor layer laminated wafer support substrate 70) was also cleaned, and then oxygen plasma (the plasma conditions were RF of 100 W, O ₂ gas flow rate of 50 sccm, and chamber pressure of 6.7 Pa) To clean the main surface. After the two-electrode transparent semiconductor layer laminated wafer 6A and the sapphire substrate (transparent semiconductor layer laminated wafer support substrate 70) were bonded together, they were pressed and bonded by using a wafer bonder in the air with a load of 7 MPa. .

  Next, referring to FIG. 2F, the bonded substrate is heated to 200 ° C., which is the softening temperature of the adhesive, with a hot plate, and the sapphire plate for temporary support (temporary support substrate) is heated. 50) was removed by sliding off. The adhesive remaining on the p-electrode 80 and n-electrode 90 side on the transparent semiconductor layer 40 was removed with a dedicated remover.

  The semiconductor device 7 which is LED (light emitting diode) was obtained by said process. In such semiconductor devices, general elementalization processes (processes such as scribe, break, die bond, and wire bond) can be applied thereafter.

(Example A2)
The structure of the intermediate layer 20 is changed from the GaN support substrate (GaN-containing transparent support substrate 10) side to the transparent semiconductor layer 40 side in order, a 10 nm thick SiO ₂ layer (second transparent layer 25), and a 35 nm thick amorphous layer. Silicon layer (photothermal conversion layer 21), 80 nm thick SiO ₂ layer (low refractive index layer 27k of light transmission suppressing structure layer 27), 35 nm thick amorphous silicon layer (high refractive index layer of light transmission suppressing structure layer 27) 27h), an SiO ₂ layer having a thickness of 80 nm (low refractive index layer 27k of the light transmission suppressing structure layer 27), an amorphous silicon layer having a thickness of 35 nm (high refractive index layer 27h of the light transmission suppressing structure layer 27), and a thickness A semiconductor device, which is an LED (light emitting diode), was produced in the same manner as in Example A1, except that a 265 nm SiO ₂ layer (first transparent layer 23a) was used.

  Since the laminated support substrate 4A for devices with two electrodes of this example A2 has an intermediate layer having the same structure as the laminated support substrate for devices of the example O2 of Example O, the laminated device substrate with two electrodes of this example A2 The laser pulse light applied to the support substrate 4A is absorbed by the photothermal conversion layer 21 of the intermediate layer 20, and the laser pulse light incident on the intermediate layer without being absorbed by the photothermal conversion layer is a light transmission suppressing structure layer of the intermediate layer 20. 27, and the transmittance of the light is reduced to 0.79%, so that the irradiated light passes through the transparent semiconductor layer 40 and the electrodes (p-electrode 80, n-electrode 90), adhesive 51, and temporary support Absorption by the substrate 50 or the like was extremely suppressed, and the occurrence of damage to the transparent semiconductor layer 40 due to heat generated by the light absorption was extremely suppressed.

[Example B]
(Example B1)
1. Manufacturing Process Up to Device Multilayer Support Substrate With reference to FIGS. 1A to 1D, a device multilayer support substrate 4 was obtained in the same manner as Example A1 of Example A.

2. Next, referring to FIG. 3A, a vacuum deposition method is performed on the entire surface of the transparent semiconductor layer 40 of the device multilayer support substrate 4 on the p-GaN layer 47 with reference to FIG. Thus, a Ni / Au electrode (specifically, an electrode composed of a Ni layer having a thickness of 5 nm and an Au layer having a thickness of 11 nm) was formed as the p-electrode 80. Thus, a laminated support substrate 4B for a device with one electrode was obtained.

3. Next, referring to FIGS. 3B to 3C, an adhesive 51 is applied on the p-electrode 80 of the laminated support substrate for a device 4B with one electrode. After interposing the temporary support substrate 50, the GaN support substrate (Ga-containing transparent support substrate 10) was slid off from the device multilayer support substrate 4B in the same manner as in Example A1 of Example A. Thus, a laminated wafer for devices 5B with one electrode was obtained.

  Here, since the laminated support substrate for devices 4B with one electrode of this example B1 has an intermediate layer having the same structure as the laminated support substrate for devices of the example O1 of Example O, the one with one electrode of this example B1 is used. The laser pulse light applied to the device multilayer support substrate 4B is absorbed by the photothermal conversion layer 21 of the intermediate layer 20, and the laser pulse light incident on the intermediate layer without being absorbed by the photothermal conversion layer is transmitted through the intermediate layer 20. Since the transmittance of the light reflected by the suppression structure layer 27 is reduced to 10%, the irradiated light is transmitted through the transparent semiconductor layer 40 to the electrode (p-electrode 80), the adhesive 51, the temporary support substrate 50, and the like. Absorption was suppressed, and the occurrence of damage to the transparent semiconductor layer 40 due to heat generated by the light absorption was suppressed.

4). Step of Producing Transparent Semiconductor Layer Laminated Wafer with One Electrode Next, referring to FIG. 3D, in the same manner as in Example A1 of Example A, metal Ga60 and an intermediate layer are formed from the laminated wafer for devices 5B with one electrode. Layer 20 was removed. Thus, a transparent semiconductor layer laminated wafer 6B with one electrode was obtained.

5. Next, referring to FIG. 3 (E), the entire surface of the main surface (N atom surface) of the Ga layer 30a of the transparent semiconductor layer laminated wafer 6B with one electrode is formed by vacuum evaporation. A Ti / Al electrode (specifically, an electrode composed of a 20 nm thick Ti layer and a 300 nm thick Au layer) was formed as the electrode 90. Next, on the n-electrode, by a vacuum vapor deposition method, a conductive adhesive layer 95a is composed of a Ti / Al layer (specifically, a Ti layer having a thickness of 20 nm and an Au layer having a thickness of 300 nm). A pad electrode layer was formed.

Next, an n-type conductive Si substrate doped with P (phosphorus), which is a conductive substrate, at a high concentration of 1 × 10 ¹⁹ cm ⁻³ was prepared as the transparent semiconductor layer laminated wafer support substrate 70. The main surface of this n-type conductive Si substrate is composed of a Ti / Al layer (specifically, a 20 nm thick Ti layer and a 300 nm thick Au layer) as a conductive adhesive layer 95b by vacuum deposition. A bonding pad electrode layer was formed.

  Next, referring to FIG. 3F, a bonding pad electrode layer (conductive adhesive layer 95a) formed on the transparent semiconductor layer laminated wafer 6B with one electrode, and an n-type conductive Si substrate (transparent The laminated pad electrode layer (conductive adhesive layer 95b) formed on the semiconductor layer laminated wafer supporting substrate 70) is superposed and heated to 400 ° C. while being pressed with a 3 MPa load with a wafer bonder kept in a vacuum state. By joining, it bonded and bonded together.

  Next, after bonding, the back surface of the n-type conductive Si substrate (transparent semiconductor layer laminated wafer support substrate 70) is polished and washed to expose a cleaned surface as an n-pad electrode layer 92 by vacuum deposition. / An Au pad electrode layer (specifically, a pad electrode layer composed of a 20 nm thick Ti layer and a 300 nm thick Au layer) was formed.

  Next, referring to FIG. 3G, the bonded substrate is heated to 200 ° C. which is the softening temperature of the adhesive with a hot plate, and the sapphire plate for temporary support (temporary support substrate) is heated. 50) was removed by sliding off. The adhesive remaining on the p-electrode 80 side on the transparent semiconductor layer 40 was removed with a dedicated remover.

  Further, in order to make the p-electrode 80, the n-electrode 90, and the n-pad electrode layer 92 ohmic, the above bonded substrate is placed in a nitrogen / oxygen atmosphere with a total pressure of 1 atm and oxygen of 0.4 vol%. Annealed at 500 ° C.

  The semiconductor device 7 which is LED (light emitting diode) was obtained by said process. In such semiconductor devices, general elementalization processes (processes such as scribe, break, die bond, and wire bond) can be applied thereafter.

  In the present embodiment, the conductive substrate which is the transparent semiconductor layer laminated wafer support substrate 70 may be a transparent substrate. In such a case, light is extracted from the support substrate side by using a transparent conductive material such as ITO (indium tin oxide) as the n-electrode, the bonding pad electrode layer, and the n-pad electrode layer. Such mounting (so-called p-down mounting) is also possible.

(Example B2)
The structure of the intermediate layer 20 is changed from the GaN support substrate (GaN-containing transparent support substrate 10) side to the transparent semiconductor layer 40 side in order, a 10 nm thick SiO ₂ layer (second transparent layer 25), and a 35 nm thick amorphous layer. Silicon layer (photothermal conversion layer 21), 80 nm thick SiO ₂ layer (low refractive index layer 27k of light transmission suppressing structure layer 27), 35 nm thick amorphous silicon layer (high refractive index layer of light transmission suppressing structure layer 27) 27h), an SiO ₂ layer having a thickness of 80 nm (low refractive index layer 27k of the light transmission suppressing structure layer 27), an amorphous silicon layer having a thickness of 35 nm (high refractive index layer 27h of the light transmission suppressing structure layer 27), and a thickness A semiconductor device, which is an LED (light emitting diode), was fabricated in the same manner as in Example B1, except that a 265 nm SiO ₂ layer (first transparent layer 23a) was used.

  Since the laminated support substrate 4B for a device with one electrode of this example B2 has an intermediate layer having the same structure as the laminated support substrate for a device of the example O2 of Example O, the laminated device for a device with one electrode of this example B2 The laser pulse light applied to the support substrate 4B is absorbed by the photothermal conversion layer 21 of the intermediate layer 20, and the laser pulse light incident on the intermediate layer without being absorbed by the photothermal conversion layer is a light transmission suppressing structure layer of the intermediate layer 20. 27 and the transmittance of the light is reduced to 0.79%, so that the irradiated light passes through the transparent semiconductor layer 40 and is absorbed by the electrode (p-electrode 80), the adhesive 51, the temporary support substrate 50, and the like. The occurrence of damage to the transparent semiconductor layer 40 due to the heat generated by the light absorption was extremely suppressed.

[Example C]
(Example C1)
1. Manufacturing Process Up to Device Multilayer Support Substrate With reference to FIGS. 1A to 1D, a device multilayer support substrate 4 was obtained in the same manner as Example A1 of Example A.

2. Next, referring to FIG. 4A, the transparent semiconductor layer laminated wafer support substrate is bonded to the device laminated support substrate. On the p-GaN layer 47 of the transparent semiconductor layer 40 of the device laminated support substrate 4 Ni / Au (specifically, an electrode composed of a Ni layer having a thickness of 5 nm and an Au layer having a thickness of 11 nm) is formed on the entire surface by vacuum deposition, and this bonded substrate is placed in a nitrogen / oxygen atmosphere. A p-electrode 80 was formed by annealing at 500 ° C.

  Next, an Ag layer 83 having a thickness of 50 nm is formed on the p-electrode 80 by vacuum deposition, and ITO (indium tin oxide) 84 having a thickness of 200 nm is formed thereon by sputtering, and then vacuum deposition is performed thereon. A Ti / Au pad electrode layer for bonding was formed as the conductive adhesive layer 85a by the method.

On the other hand, a transparent semiconductor layer laminated wafer support substrate 70 in which a bonding Ti / Au pad electrode layer (conductive adhesive layer 85b) was formed on the main surface was prepared. As the transparent semiconductor layer laminated wafer support substrate 70, a p-type conductivity Si substrate doped with B (boron), which is a conductive support substrate, at a high concentration of 1 × 10 ¹⁹ cm ⁻³ was used.

  Next, a bonding Ti / Au pad electrode layer (conductive adhesive layer 85a) formed on the device laminated support substrate 4 and a bonding Ti / Au pad electrode formed on the transparent semiconductor layer laminated wafer support substrate 70 The layers (the conductive adhesive layer 85b) were superposed and bonded together by heating and pressing with a wafer bonder at 350 ° C. under the condition of 4 MPa.

3. Next, referring to FIGS. 4B to 4C, a device laminated support substrate 4 </ b> C to which a transparent semiconductor layer laminated wafer support substrate 70 is bonded is described with reference to FIGS. In the same manner as in Example A1 of A, the Ga-containing transparent support substrate 10 was separated. Thus, a laminated wafer for devices 5C with a supporting substrate was obtained.

  Here, the device laminated support substrate 4C with the support substrate of Example C1 has an intermediate layer having the same structure as that of the device laminate support substrate of Example O1 of Example O. The laser pulse light irradiated to the device laminated support substrate 4C is absorbed by the photothermal conversion layer 21 of the intermediate layer 20, and the laser pulse light incident on the intermediate layer without being absorbed by the photothermal conversion layer is transmitted through the intermediate layer 20. Since the transmittance of the light reflected by the suppression structure layer 27 is reduced to 10%, the irradiated light passes through the transparent semiconductor layer 40 and passes through the electrode (p-electrode 80), the conductive adhesive layer 85, and the temporary support substrate 50. And the occurrence of damage to the transparent semiconductor layer 40 due to the heat generated by the light absorption is suppressed.

4). Step of Producing Transparent Semiconductor Layer Laminated Wafer with Support Substrate Next, referring to FIG. 4D, from the device laminated wafer 5C with a support substrate, in the same manner as in Example A1 of Example A, the metal Ga60 and The intermediate layer 20 was separated and removed. Thus, a transparent semiconductor layer laminated wafer 6 with a support substrate was obtained.

5. Next, referring to FIG. 4E, a vacuum deposition method is performed on a p-type conductivity Si substrate (transparent semiconductor layer laminated wafer supporting substrate) of a transparent semiconductor layer laminated wafer 6 with a supporting substrate. Thus, a Ti / Au pad electrode layer (specifically, a pad electrode layer composed of a 20 nm thick Ti layer and a 300 nm thick Au layer) was formed as the p-pad electrode layer 86. Further, a Ti / Au electrode (specifically, a 20 nm-thick Ti layer and a thickness) is formed on the GaN layer 30a of the transparent semiconductor layer laminated wafer 6 with a support substrate by a vacuum deposition method and a lift-off method. An electrode composed of a 300 nm thick Au layer) was formed. In order to obtain an ohmic junction between the p-pad electrode layer 86 and the p-electrode 90 and the semiconductor layer, the transparent semiconductor layer laminated wafer 6 with a supporting substrate on which these electrodes were formed was annealed at 500 ° C. in a nitrogen atmosphere. . Thus, a semiconductor device 7 which is an LED was obtained. Thereafter, a general element forming process (processes such as scribe, break, die bond, wire bond) can be applied.

(Example C2)
The structure of the intermediate layer 20 is changed from the GaN support substrate (GaN-containing transparent support substrate 10) side to the transparent semiconductor layer 40 side in order, a 10 nm thick SiO ₂ layer (second transparent layer 25), and a 35 nm thick amorphous layer. Silicon layer (photothermal conversion layer 21), 80 nm thick SiO ₂ layer (low refractive index layer 27k of light transmission suppressing structure layer 27), 35 nm thick amorphous silicon layer (high refractive index layer of light transmission suppressing structure layer 27) 27h), an SiO ₂ layer having a thickness of 80 nm (low refractive index layer 27k of the light transmission suppressing structure layer 27), an amorphous silicon layer having a thickness of 35 nm (high refractive index layer 27h of the light transmission suppressing structure layer 27), and a thickness A semiconductor device, which is an LED (light emitting diode), was produced in the same manner as in Example C1, except that a 265 nm SiO ₂ layer (first transparent layer 23a) was used.

  Since the laminated support substrate 4C for devices with a support substrate of Example C2 has an intermediate layer having the same structure as the laminated support substrate for devices of Example O2 of Example O, the laminate for devices with a support substrate of Example C2 is used. The laser pulse light applied to the support substrate 4C is absorbed by the light-to-heat conversion layer 21 of the intermediate layer 20, and the laser pulse light incident on the intermediate layer without being absorbed by the light-to-heat conversion layer is the light transmission suppressing structure layer of the intermediate layer 20. 27 and the light transmittance is reduced to 0.79%, so that the irradiated light is transmitted through the transparent semiconductor layer 40, and the electrode (p-electrode 80), the conductive adhesive layer 85, the temporary support substrate 50, etc. And the occurrence of damage to the transparent semiconductor layer 40 due to the heat generated by the light absorption is extremely suppressed.

[Example D]
(Example D1)
This embodiment is applied when the thermal expansion coefficient of the transparent semiconductor layer laminated wafer supporting substrate is the same as or close to the thermal expansion coefficient of GaN.

1. Manufacturing Process Up to Device Multilayer Support Substrate With reference to FIGS. 1A to 1D, a device multilayer support substrate 4 was obtained in the same manner as Example A1 of Example A.

2. Next, referring to FIGS. 5A and 5B, an adhesive 51 is interposed on the p-GaN layer 47 of the intermediate layer 20 of the laminated support substrate 4 for devices. After making the temporary support substrate 50, the GaN support substrate (Ga-containing transparent support substrate 10) was slid off from the device multilayer support substrate 4 in the same manner as in Example A1 of Example A. Thus, the device laminated wafer 5 was obtained.

  Here, because the device multilayer support substrate 4 of Example D1 has an intermediate layer having the same structure as the device multilayer support substrate of Example O1 of Example O, the device multilayer support substrate 4 of Example C1 is irradiated. The laser pulse light that has been absorbed is absorbed by the photothermal conversion layer 21 of the intermediate layer 20, and the laser pulse light that has entered the intermediate layer without being absorbed by the photothermal conversion layer is reflected by the light transmission suppression structure layer 27 of the intermediate layer 20. Since the light transmittance is reduced to 10%, the irradiation light is suppressed from being transmitted through the transparent semiconductor layer 40 and absorbed by the adhesive 51, the temporary support substrate 50, and the like, and heat generated by the light absorption. The occurrence of damage to the transparent semiconductor layer 40 due to was suppressed.

3. Step of Producing Transparent Semiconductor Layer Laminated Wafer Next, with reference to FIG. 5C, the metal Ga 60 and the intermediate layer 20 were removed from the device laminated wafer 5 in the same manner as in Example A1 of Example A. Thus, a transparent semiconductor layer laminated wafer 6 was obtained.

4). Next, referring to FIG. 5D, a spinel substrate, which is a transparent support substrate, was bonded to the transparent semiconductor layer stacked wafer 6 as the transparent semiconductor layer stacked wafer support substrate 70.

The above bonding is performed by cleaning the main surface of the GaN layer 30a of the transparent semiconductor layer laminated wafer 6 and then putting it in a plasma etching apparatus to form nitrogen plasma (the plasma conditions are RF of 100 W, N ₂ gas flow rate of 50 sccm, chamber The main surface was cleaned by exposure to a pressure of 13.3 Pa. The main surface of the spinel substrate (transparent semiconductor layer laminated wafer support substrate 70) was also cleaned, and then oxygen plasma (plasma conditions were RF of 100 W, O ₂ gas flow rate of 50 sccm, and chamber pressure of 6.7 Pa). ) To clean the main surface. After the transparent semiconductor layer laminated wafer 6 and the spinel substrate (transparent semiconductor layer laminated wafer support substrate 70) were bonded together, they were pressed and bonded in a pressure of 7 MPa using a wafer bonder in the atmosphere. Thereafter, the bonded substrate was slowly heated up to 200 ° C. with a hot plate to increase the bonding strength.

  At this time, referring to FIG. 5E, the bonded substrate is heated to 200 ° C., which is the softening temperature of the adhesive, and therefore the sapphire plate for temporary support (temporary support substrate) is bonded to the bonded substrate. 50) was removed by sliding off. The adhesive remaining on the p-electrode 80 side on the transparent semiconductor layer 40 was removed with a dedicated remover.

  Thereafter, using a normal electrode forming step, for example, a step of forming a p-electrode and an n-electrode as described in the step of preparing a laminated support substrate for a device with two electrodes in Example A1 of Example A, A semiconductor device (see FIG. 5 (F1)) having the p-electrode 80 and the n-electrode 90 on one side was obtained.

  When a transparent and conductive substrate is used as the transparent semiconductor layer laminated wafer support substrate 70, a semiconductor having a p-electrode 80 on one side and an n-electrode 90 on the other side by a normal electrode forming process. A device (see FIG. 5F2) can also be formed.

(Example D2)
The structure of the intermediate layer 20 is changed from the GaN support substrate (GaN-containing transparent support substrate 10) side to the transparent semiconductor layer 40 side in order, a 10 nm thick SiO ₂ layer (second transparent layer 25), and a 35 nm thick amorphous layer. Silicon layer (photothermal conversion layer 21), 80 nm thick SiO ₂ layer (low refractive index layer 27k of light transmission suppressing structure layer 27), 35 nm thick amorphous silicon layer (high refractive index layer of light transmission suppressing structure layer 27) 27h), an SiO ₂ layer having a thickness of 80 nm (low refractive index layer 27k of the light transmission suppressing structure layer 27), an amorphous silicon layer having a thickness of 35 nm (high refractive index layer 27h of the light transmission suppressing structure layer 27), and a thickness A semiconductor device, which is an LED (light emitting diode), was produced in the same manner as in Example D1, except that a 265 nm SiO ₂ layer (first transparent layer 23a) was used.

  Since the laminated support substrate 4 for a device with a support substrate of Example D2 has an intermediate layer having the same structure as the laminated support substrate for a device of Example O2 of Example O, the laminated device for a device with a support substrate of Example D2 The laser pulse light applied to the support substrate 4 is absorbed by the light-to-heat conversion layer 21 of the intermediate layer 20, and the laser pulse light incident on the intermediate layer without being absorbed by the light-to-heat conversion layer is the light transmission suppressing structure layer of the intermediate layer 20. 27 and the light transmittance is reduced to 0.79%, so that the irradiated light is transmitted through the transparent semiconductor layer 40, and the electrode (p-electrode 80), the conductive adhesive layer 85, the temporary support substrate 50, etc. And the occurrence of damage to the transparent semiconductor layer 40 due to the heat generated by the light absorption is extremely suppressed.

  It should be understood that the embodiments and examples disclosed herein are illustrative and non-restrictive in every respect. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  DESCRIPTION OF SYMBOLS 1 Laminated support board | substrate, 2 Laminated laminated board | substrate, 3 Laminated support board | substrate for epi-growth, Laminated support board | substrate for 4, 4A, 4B, 4C device, Laminated wafer for 5, 5A, 5B, 5C device 6C transparent semiconductor layer laminated wafer, 7 semiconductor device, 10 Ga-containing transparent support substrate, 20, 20a intermediate layer, 21 photothermal conversion layer, 23, 23a, 23b first transparent layer, 25 second transparent layer, 27 light transmission Suppression structure layer, 27h High refractive index layer, 27k Low refractive index layer, 30 GaN substrate, 30a GaN layer, 30b Remaining GaN substrate, 40 Transparent semiconductor layer, 41 GaN buffer layer, 43 n-GaN layer, 45 Light emitting layer, 47 p-GaN layer, 50 temporary support substrate, 51 adhesive, 60 metal Ga, 70 transparent semiconductor layer laminated wafer support substrate, 80 p-electrode, 83 Ag layer , 84 ITO layer, 85, 85a, 85b, 95, 95a, 95b conductive adhesive layer, 86 p-pad electrode layer, 90 n-electrode, 92 n-pad electrode layer.

Claims (28)

Forming a laminated support substrate by forming an intermediate layer including a photothermal conversion layer and a light transmission suppressing structure layer on a Ga-containing transparent support substrate;
Bonding a GaN substrate to the intermediate layer of the laminated support substrate to produce a laminated laminated substrate;
Epi-growth in which a GaN layer is formed on the intermediate layer of the laminated support substrate by separating the GaN substrate of the laminated laminated substrate at a predetermined depth from the bonding surface with the intermediate layer Producing a laminated support substrate for use,
Producing a laminated support substrate for a device by epitaxially growing at least one transparent semiconductor layer on the GaN layer of the laminated support substrate for epi growth; and
The laminated support substrate for a device has a wavelength longer than the wavelength corresponding to the lowest band gap energy among the band gap energies of the Ga-containing transparent support substrate, the GaN layer, and the transparent semiconductor layer, and the photothermal conversion layer. By irradiating light having a wavelength that can be absorbed to separate the Ga-containing transparent support substrate and the intermediate layer, a laminated wafer for devices including the transparent semiconductor layer, the GaN layer, and the intermediate layer is manufactured. Process,
Removing the intermediate layer from the device laminated wafer to produce a semiconductor device including a transparent semiconductor layer laminated wafer including the transparent semiconductor layer and the GaN layer.   2. The method of manufacturing a semiconductor device according to claim 1, wherein a transmittance, which is a ratio of light emitted from the intermediate layer to light incident on the intermediate layer, of light irradiated on the device multilayer support substrate is less than 20%. .   The method of manufacturing a semiconductor device according to claim 1, wherein the light transmission suppressing structure layer is formed of one or more pairs of a low refractive index layer and a high refractive index layer.   The ratio of the light absorptance of the light-to-heat conversion layer to the total light absorptance of the light-to-heat conversion layer and the light transmission suppressing structure layer for the light incident on the intermediate layer is 0.5 or more. The manufacturing method of the semiconductor device in any one of Claims 1-3.   The intermediate layer includes a first transparent layer disposed between the light transmission suppressing structure layer of the intermediate layer and the GaN substrate, the photothermal conversion layer of the intermediate layer, and the Ga-containing transparent support substrate. The method for manufacturing a semiconductor device according to any one of claims 1 to 4, further comprising a second transparent layer disposed therebetween.   The method of manufacturing a semiconductor device according to claim 5, wherein a thickness of the first transparent layer is larger than a thickness of the second transparent layer. After the step of producing the device laminated support substrate and before the step of producing the device laminated wafer, further comprising the step of forming an electrode on the transparent semiconductor layer side of the device laminated support substrate,
The said electrode is a manufacturing method of the semiconductor device in any one of Claims 1-6 formed with the material which absorbs the light irradiated to the said laminated support substrate for devices. After the step of producing the laminated support substrate for devices and before the step of producing the laminated wafer for devices, either an adhesive or an adhesive layer is provided on the transparent semiconductor layer side of the laminated support substrate for devices. Further comprising the step of forming,
Either of the said adhesive agent and the said contact bonding layer is a manufacturing method of the semiconductor device in any one of Claims 1-6 formed with the material which absorbs the light irradiated to the said laminated support substrate for devices. After the step of manufacturing the laminated support substrate for devices and before the step of manufacturing the laminated wafer for devices, a temporary support substrate and a transparent semiconductor layer laminated wafer are provided on the transparent semiconductor layer side of the laminated support substrate for devices. Further comprising the step of arranging any of the support substrates,
Either of the said temporary support substrate and the said transparent semiconductor layer laminated wafer support substrate is formed with the material which absorbs the light irradiated to the said multilayer support substrate for devices. A method for manufacturing a semiconductor device. The Ga-containing transparent support substrate, the transparent semiconductor layer, the first transparent layer, and the second transparent layer have a light absorption coefficient of less than 1 × 10 ³ cm ⁻¹ for light having a wavelength of 500 nm or more and less than 600 nm, and the photothermal The method for manufacturing a semiconductor device according to claim 5, wherein the conversion layer has a light absorption coefficient of 1 × 10 ³ cm ⁻¹ or more for light having a wavelength of 500 nm or more and less than 600 nm.   11. The method of manufacturing a semiconductor device according to claim 1, wherein the light applied to the laminated support substrate for devices is laser light having a wavelength of 500 nm or more and less than 600 nm.   When separating the Ga-containing transparent support substrate and the intermediate layer by irradiating the laminated support substrate for devices with the light, an interface between the Ga-containing transparent support substrate and the intermediate layer from the Ga-containing transparent support substrate The method for manufacturing a semiconductor device according to claim 1, wherein metal Ga is deposited on the substrate.   The method for manufacturing a semiconductor device according to claim 1, wherein the intermediate layer has a melting point of 1200 ° C. or higher.   The method of manufacturing a semiconductor device according to claim 1, wherein the photothermal conversion layer is an amorphous silicon layer.   The method for manufacturing a semiconductor device according to claim 3, wherein the high refractive index layer is an amorphous silicon layer.   The method for manufacturing a semiconductor device according to claim 5, wherein the low refractive index layer, the first transparent layer, and the second transparent layer are each independently one of a silicon oxide layer and a silicon nitride layer. .   The method of manufacturing a semiconductor device according to claim 1, wherein the transparent semiconductor layer is a group III nitride semiconductor layer. A Ga-containing transparent support substrate, an intermediate layer disposed on the Ga-containing transparent support substrate, and a GaN layer disposed on the intermediate layer,
The intermediate layer is a laminated support substrate for epitaxial growth including a photothermal conversion layer and a light transmission suppressing structure layer.   The laminated support substrate for epitaxial growth according to claim 18, wherein the light transmission suppressing structure layer includes at least one pair of a low refractive index layer and a high refractive index layer.   The intermediate layer includes a first transparent layer disposed between the light transmission suppressing structure layer of the intermediate layer and the GaN layer, the photothermal conversion layer of the intermediate layer, and the Ga-containing transparent support substrate. The laminated support substrate for epitaxial growth according to claim 18 or 19, further comprising a second transparent layer disposed therebetween.   21. The laminated support substrate for epitaxial growth according to claim 20, wherein a thickness of the first transparent layer is larger than a thickness of the second transparent layer.   The laminated support substrate for epitaxial growth according to any one of claims 18 to 21, wherein the photothermal conversion layer is an amorphous silicon layer.   The laminated support substrate for epitaxial growth according to claim 19, wherein the high refractive index layer of the light transmission suppressing structure layer is an amorphous silicon layer.   The laminated support substrate for epitaxial growth according to claim 20 or 21, wherein each of the low refractive index layer, the first transparent layer, and the second transparent layer is independently a silicon oxide layer or a silicon nitride layer. .   25. A device including the epitaxial growth support substrate according to claim 18 and at least one transparent semiconductor layer epitaxially grown on the GaN layer of the epitaxial growth support substrate. Laminated support substrate.   Light having a wavelength longer than the wavelength corresponding to the lowest band gap energy among the band gap energies of the Ga-containing transparent support substrate, the GaN layer, and the transparent semiconductor layer, and the wavelength that can be absorbed by the photothermal conversion layer is The laminated support substrate for a device according to claim 25, wherein a transmittance, which is a ratio of light emitted from the intermediate layer to light incident on the intermediate layer when irradiated to the laminated support substrate for device, is less than 20%. .   The ratio of the light absorptance of the light-to-heat conversion layer to the total light absorptance of the light-to-heat conversion layer and the light transmission suppressing structure layer for the light incident on the intermediate layer is 0.5 or more. 27. A laminated support substrate for a device according to claim 25 or claim 26.   The laminated support substrate for a device according to any one of claims 25 to 27, wherein the transparent semiconductor layer is a group III nitride semiconductor layer.

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