SG11201810919UA - Engineered substrate structure for power and rf applications - Google Patents
Engineered substrate structure for power and rf applicationsInfo
- Publication number
- SG11201810919UA SG11201810919UA SG11201810919UA SG11201810919UA SG11201810919UA SG 11201810919U A SG11201810919U A SG 11201810919UA SG 11201810919U A SG11201810919U A SG 11201810919UA SG 11201810919U A SG11201810919U A SG 11201810919UA SG 11201810919U A SG11201810919U A SG 11201810919UA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- layer coupled
- quora
- santa clara
- california
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000919 ceramic Substances 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
- H01L21/3006—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Peptides Or Proteins (AREA)
Abstract
INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 21 December 2017 (21.12.2017) WIPO I PCT IiiimmolioloiollmolommiololimiolimomovoimIE (10) International Publication Number WO 2017/218536 Al (51) International Patent Classification: C3OB 25/14 (2006.01) H01L 29/16 (2006.01) H01L 21/30 (2006.01) H01L 29/20 (2006.01) H01L 21/8234 (2006.01) H01L 29/267 (2006.01) (21) International Application Number: PCT/US2017/037252 (22) International Filing Date: 13 June 2017 (13.06.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/350,084 14 June 2016 (14.06.2016) US 62/350,077 14 June 2016 (14.06.2016) US (71) Applicant: QUORA TECHNOLOGY, INC. [US/US]; 2306 Walsh Avenue, Santa Clara, California 95051 (US). (72) Inventors: ODNOBLYUDOV, Vladimir; c/o Quora Technology, Inc., 2306 Walsh Avenue, Santa Clara, Cali- fornia 95032 (US). BASCERI, Cem; c/o Quora Technolo- gy, Inc., 2306 Walsh Avenue, Santa Clara, California 95051 (US). FARRENS, Shari; c/o Quora Technology, Inc., 2306 Walsh Avenue, Santa Clara, California 95051 (US). (74) Agent: LIU, Rong et al.; KILPATRICK TOWNSEND & STOCKTON LLP, Mailstop: IP Docketing-22, 1100 Peachtree Street, Suite 2800, Atlanta, Georgia 30309 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (54) Title: ENGINEERED SUBSTRATE STRUCTURE FOR POWER AND RF APPLICATIONS 100 122 120 cc N O C FIG. (57) : A substrate includes a support structure comprising: a polycrystalline ceramic core; a first adhesion layer coupled to the polycrystalline ceramic core; a conductive layer coupled to the first adhesion layer; a second adhesion layer coupled to the conductive layer; and a barrier layer coupled to the second adhesion layer. The substrate also includes a silicon oxide layer coupled to the support structure, a substantially single crystalline silicon layer coupled to the silicon oxide layer, and an epitaxial III-V layer coupled to the substantially single crystalline silicon layer. [Continued on next page] WO 2017/218536 Al MIDEDIMOMOIDEIRMEM00111HEINIERVOIMIE (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662350084P | 2016-06-14 | 2016-06-14 | |
US201662350077P | 2016-06-14 | 2016-06-14 | |
PCT/US2017/037252 WO2017218536A1 (en) | 2016-06-14 | 2017-06-13 | Engineered substrate structure for power and rf applications |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201810919UA true SG11201810919UA (en) | 2019-01-30 |
Family
ID=60664230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201810919UA SG11201810919UA (en) | 2016-06-14 | 2017-06-13 | Engineered substrate structure for power and rf applications |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP3469119A4 (en) |
JP (4) | JP6626607B2 (en) |
KR (1) | KR102361057B1 (en) |
CN (2) | CN109844184B (en) |
SG (1) | SG11201810919UA (en) |
TW (3) | TWI839076B (en) |
WO (1) | WO2017218536A1 (en) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10297445B2 (en) | 2016-06-14 | 2019-05-21 | QROMIS, Inc. | Engineered substrate structure for power and RF applications |
WO2017218536A1 (en) * | 2016-06-14 | 2017-12-21 | Quora Technology, Inc. | Engineered substrate structure for power and rf applications |
US10622468B2 (en) | 2017-02-21 | 2020-04-14 | QROMIS, Inc. | RF device integrated on an engineered substrate |
US10734303B2 (en) * | 2017-11-06 | 2020-08-04 | QROMIS, Inc. | Power and RF devices implemented using an engineered substrate structure |
US10586844B2 (en) * | 2018-01-23 | 2020-03-10 | Texas Instruments Incorporated | Integrated trench capacitor formed in an epitaxial layer |
TWI692869B (en) * | 2019-05-03 | 2020-05-01 | 世界先進積體電路股份有限公司 | Substrates and methods for forming the same |
CN111987140A (en) * | 2019-05-21 | 2020-11-24 | 世界先进积体电路股份有限公司 | Substrate and method for manufacturing the same |
JP7319227B2 (en) | 2020-05-11 | 2023-08-01 | 信越化学工業株式会社 | BASE SUBSTRATE FOR III-V COMPOUND CRYSTAL AND METHOD FOR MANUFACTURING THE SAME |
US20230340694A1 (en) | 2020-06-09 | 2023-10-26 | Shin-Etsu Chemical Co., Ltd. | Substrate for group-iii nitride epitaxial growth and method for producing the same |
JP2022012558A (en) | 2020-07-01 | 2022-01-17 | 信越化学工業株式会社 | Substrate for large-bore group iii nitride-based epitaxial growth, and production method thereof |
KR102446604B1 (en) * | 2021-01-04 | 2022-09-26 | 한국과학기술원 | Growth structure for strained channel, and methods for manufacturing strained channel and device using the same |
EP4289994A1 (en) | 2021-02-05 | 2023-12-13 | Shin-Etsu Handotai Co., Ltd. | Nitride semiconductor substrate and method for producing same |
JP2022131086A (en) | 2021-02-26 | 2022-09-07 | 信越半導体株式会社 | Nitride semiconductor substrate and manufacturing method for the same |
EP4306689A1 (en) * | 2021-03-10 | 2024-01-17 | Shin-Etsu Chemical Co., Ltd. | Seed substrate for epitaxial growth use and method for manufacturing same, and semiconductor substrate and method for manufacturing same |
WO2022259651A1 (en) | 2021-06-08 | 2022-12-15 | 信越半導体株式会社 | Nitride semiconductor substrate and method for producing same |
JP2023025432A (en) * | 2021-08-10 | 2023-02-22 | 信越半導体株式会社 | Nitride semiconductor substrate and method for producing the same |
WO2023047864A1 (en) * | 2021-09-21 | 2023-03-30 | 信越半導体株式会社 | Nitride semiconductor substrate and method for producing same |
WO2023063046A1 (en) * | 2021-10-15 | 2023-04-20 | 信越半導体株式会社 | Nitride semiconductor substrate and manufacturing method therefor |
JPWO2023063278A1 (en) * | 2021-10-15 | 2023-04-20 | ||
JP2023065227A (en) | 2021-10-27 | 2023-05-12 | 信越化学工業株式会社 | Epitaxial growth seed substrate, method for manufacturing the same, semiconductor substrate and method for manufacturing the same |
WO2023119916A1 (en) | 2021-12-21 | 2023-06-29 | 信越半導体株式会社 | Nitride semiconductor substrate and method for manufacturing nitride semiconductor substrate |
JP2023098137A (en) | 2021-12-28 | 2023-07-10 | 信越化学工業株式会社 | Substrate for high characteristic epitaxial growth and method for manufacturing the same |
JP2024070722A (en) * | 2022-11-11 | 2024-05-23 | 信越半導体株式会社 | Substrate for high frequency device and method for manufacturing same |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4430149A (en) * | 1981-12-30 | 1984-02-07 | Rca Corporation | Chemical vapor deposition of epitaxial silicon |
US7238595B2 (en) * | 2003-03-13 | 2007-07-03 | Asm America, Inc. | Epitaxial semiconductor deposition methods and structures |
US6972255B2 (en) * | 2003-07-28 | 2005-12-06 | Freescale Semiconductor, Inc. | Semiconductor device having an organic anti-reflective coating (ARC) and method therefor |
US7420226B2 (en) * | 2005-06-17 | 2008-09-02 | Northrop Grumman Corporation | Method for integrating silicon CMOS and AlGaN/GaN wideband amplifiers on engineered substrates |
US20060284167A1 (en) * | 2005-06-17 | 2006-12-21 | Godfrey Augustine | Multilayered substrate obtained via wafer bonding for power applications |
CN100424878C (en) * | 2006-11-21 | 2008-10-08 | 华中科技大学 | Ferroelectric film capacity used for ferroelectric memorizer and its manufacturing method |
CN101192533B (en) * | 2006-11-28 | 2010-06-16 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and manufacturing method thereof, and etch stop layer forming method |
FR2912552B1 (en) * | 2007-02-14 | 2009-05-22 | Soitec Silicon On Insulator | MULTILAYER STRUCTURE AND METHOD FOR MANUFACTURING THE SAME |
US7732301B1 (en) * | 2007-04-20 | 2010-06-08 | Pinnington Thomas Henry | Bonded intermediate substrate and method of making same |
CN101669193B (en) | 2007-04-27 | 2012-02-15 | 株式会社半导体能源研究所 | Soi substrate and manufacturing method of the same, and semiconductor device |
US20090278233A1 (en) * | 2007-07-26 | 2009-11-12 | Pinnington Thomas Henry | Bonded intermediate substrate and method of making same |
CN101621005B (en) * | 2008-07-02 | 2012-08-22 | 中芯国际集成电路制造(上海)有限公司 | TFT MONOS or SONOS memory cell structure |
US7915645B2 (en) | 2009-05-28 | 2011-03-29 | International Rectifier Corporation | Monolithic vertically integrated composite group III-V and group IV semiconductor device and method for fabricating same |
CN102044473B (en) * | 2009-10-13 | 2013-03-06 | 中芯国际集成电路制造(上海)有限公司 | Formation method of semiconductor device |
US9012253B2 (en) * | 2009-12-16 | 2015-04-21 | Micron Technology, Inc. | Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods |
KR20120020526A (en) | 2010-08-30 | 2012-03-08 | 삼성전자주식회사 | Substrate have buried conductive layer and formation method thereof, and fabricating method of semiconductor device using the same |
CN102456721A (en) * | 2010-10-17 | 2012-05-16 | 金木子 | Gallium nitride-based chip with ceramic substrate and manufacturing method |
US8546165B2 (en) * | 2010-11-02 | 2013-10-01 | Tsmc Solid State Lighting Ltd. | Forming light-emitting diodes using seed particles |
US8766274B2 (en) * | 2010-12-14 | 2014-07-01 | Hexatech, Inc. | Thermal expansion engineering for polycrystalline aluminum nitride sintered bodies |
JP2012142385A (en) * | 2010-12-28 | 2012-07-26 | Sumitomo Electric Ind Ltd | Semiconductor device manufacturing method |
US8916483B2 (en) * | 2012-03-09 | 2014-12-23 | Soitec | Methods of forming semiconductor structures including III-V semiconductor material using substrates comprising molybdenum |
JP6152548B2 (en) * | 2012-08-06 | 2017-06-28 | 並木精密宝石株式会社 | Gallium oxide substrate and manufacturing method thereof |
US9082692B2 (en) * | 2013-01-02 | 2015-07-14 | Micron Technology, Inc. | Engineered substrate assemblies with epitaxial templates and related systems, methods, and devices |
US9650723B1 (en) * | 2013-04-11 | 2017-05-16 | Soraa, Inc. | Large area seed crystal for ammonothermal crystal growth and method of making |
JP6176069B2 (en) * | 2013-11-13 | 2017-08-09 | 住友電気工業株式会社 | Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, group III nitride semiconductor device and method for manufacturing the same |
KR102300972B1 (en) * | 2014-07-04 | 2021-09-09 | 미쓰비시 마테리알 가부시키가이샤 | Substrate unit for power modules, and power module |
JP2016058693A (en) | 2014-09-12 | 2016-04-21 | 株式会社東芝 | Semiconductor device, semiconductor wafer, and method of manufacturing semiconductor device |
US9997391B2 (en) * | 2015-10-19 | 2018-06-12 | QROMIS, Inc. | Lift off process for chip scale package solid state devices on engineered substrate |
SG11201804490VA (en) * | 2015-12-04 | 2018-06-28 | Qromis Inc | Wide band gap device integrated circuit architecture on engineered substrate |
WO2017218536A1 (en) | 2016-06-14 | 2017-12-21 | Quora Technology, Inc. | Engineered substrate structure for power and rf applications |
US10483110B2 (en) * | 2016-07-26 | 2019-11-19 | Mitsubishi Electric Corporation | Semiconductor device and method of manufacturing semiconductor device |
CN109671612B (en) * | 2018-11-15 | 2020-07-03 | 中国科学院上海微系统与信息技术研究所 | Gallium oxide semiconductor structure and preparation method thereof |
-
2017
- 2017-06-13 WO PCT/US2017/037252 patent/WO2017218536A1/en unknown
- 2017-06-13 JP JP2018565352A patent/JP6626607B2/en active Active
- 2017-06-13 CN CN201780049691.6A patent/CN109844184B/en active Active
- 2017-06-13 SG SG11201810919UA patent/SG11201810919UA/en unknown
- 2017-06-13 TW TW112101490A patent/TWI839076B/en active
- 2017-06-13 TW TW110133509A patent/TWI793755B/en active
- 2017-06-13 CN CN202111369484.3A patent/CN114256068A/en active Pending
- 2017-06-13 KR KR1020197000184A patent/KR102361057B1/en active IP Right Grant
- 2017-06-13 EP EP17813933.3A patent/EP3469119A4/en active Pending
- 2017-06-13 TW TW106119602A patent/TWI743136B/en active
-
2019
- 2019-12-01 JP JP2019217661A patent/JP7001660B2/en active Active
-
2021
- 2021-12-24 JP JP2021210164A patent/JP7416556B2/en active Active
-
2023
- 2023-09-25 JP JP2023161626A patent/JP2023182643A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
TW202322418A (en) | 2023-06-01 |
KR102361057B1 (en) | 2022-02-08 |
JP7001660B2 (en) | 2022-01-19 |
JP2019523994A (en) | 2019-08-29 |
EP3469119A4 (en) | 2020-02-26 |
EP3469119A1 (en) | 2019-04-17 |
TWI839076B (en) | 2024-04-11 |
KR20190019122A (en) | 2019-02-26 |
JP7416556B2 (en) | 2024-01-17 |
TW201807839A (en) | 2018-03-01 |
CN109844184B (en) | 2021-11-30 |
JP6626607B2 (en) | 2019-12-25 |
WO2017218536A1 (en) | 2017-12-21 |
CN109844184A (en) | 2019-06-04 |
TWI743136B (en) | 2021-10-21 |
JP2023182643A (en) | 2023-12-26 |
JP2022058405A (en) | 2022-04-12 |
TWI793755B (en) | 2023-02-21 |
TW202203473A (en) | 2022-01-16 |
CN114256068A (en) | 2022-03-29 |
JP2020074399A (en) | 2020-05-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG11201810919UA (en) | Engineered substrate structure for power and rf applications | |
SG11201901373YA (en) | Electronic power devices integrated with an engineered substrate | |
SG11201811295TA (en) | Polycrystalline ceramic substrate and method of manufacture | |
SG11201906133PA (en) | Gallium nitride expitaxial structures for power devices | |
SG11201907481PA (en) | Rf device integrated on an engineered substrate | |
SG11201811465WA (en) | Semiconductor package and method of forming the same | |
SG11201806553WA (en) | Device and arrangement for controlling an electromagnetic wave, methods of forming and operating the same | |
SG11201906017UA (en) | Support for a semiconductor structure | |
SG11201805152UA (en) | Superconducting bump bonds | |
SG11201805785TA (en) | Chimeric proteins and methods of immunotherapy | |
SG11201810509PA (en) | Anti-pd-l1 antibodies | |
SG11201804490VA (en) | Wide band gap device integrated circuit architecture on engineered substrate | |
SG11201900319PA (en) | Compositions and methods using same for carbon doped silicon containing films | |
SG11201901715UA (en) | Adenovirus armed with bispecific t cell engager (bite) | |
SG11201807421TA (en) | The use of glucocorticoid receptor modulators to potentiate checkpoint inhibitors | |
SG11201807803SA (en) | Semiconductor package and method of forming the same | |
SG11201900269XA (en) | Channel sensing for independent links | |
SG11201805709RA (en) | Anti-pro/latent myostatin antibodies and methods of use thereof | |
SG11201808969XA (en) | Barrier layer for interconnects in 3d integrated device | |
SG11201807164XA (en) | Circuit arrangement, method of forming and operating the same | |
SG11201900554YA (en) | Spiro-lactam nmda modulators and methods of using same | |
SG11201810525XA (en) | Anti-gitr antibodies and uses thereof | |
SG11201908243XA (en) | Transmitting uplink control information (uci) | |
SG11201909691WA (en) | Cementitious composite mat | |
SG11201810519XA (en) | A rinse composition, a method for forming resist patterns and a method for making semiconductor devices |