SG11201810519XA - A rinse composition, a method for forming resist patterns and a method for making semiconductor devices - Google Patents

A rinse composition, a method for forming resist patterns and a method for making semiconductor devices

Info

Publication number
SG11201810519XA
SG11201810519XA SG11201810519XA SG11201810519XA SG11201810519XA SG 11201810519X A SG11201810519X A SG 11201810519XA SG 11201810519X A SG11201810519X A SG 11201810519XA SG 11201810519X A SG11201810519X A SG 11201810519XA SG 11201810519X A SG11201810519X A SG 11201810519XA
Authority
SG
Singapore
Prior art keywords
international
rinse composition
kakegawa
shizuoka
shi
Prior art date
Application number
SG11201810519XA
Inventor
Kazuma Yamamoto
Yuriko Matsuura
Tomoyasu Yashima
Tatsuro Nagahara
Original Assignee
Az Electronic Mat Luxembourg Sarl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Mat Luxembourg Sarl filed Critical Az Electronic Mat Luxembourg Sarl
Publication of SG11201810519XA publication Critical patent/SG11201810519XA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/004—Surface-active compounds containing F
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2003—Alcohols; Phenols
    • C11D3/2041—Dihydric alcohols
    • C11D3/2055—Dihydric alcohols unsaturated
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/48—Medical, disinfecting agents, disinfecting, antibacterial, germicidal or antimicrobial compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • C11D2111/22—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property 111111H11111111111111111111111111111111111111111111111111111111111111111111111111110111111 Organization 0 International Bureau (10) International Publication Number (43) International Publication Date .....0\"\"\"1 WO 2017/220479 Al 28 December 2017 (28.12.2017) WIP0 I PCT (51) International Patent Classification: G03F 7/40 (2006.01) Published: — with international search report (Art. 21(3)) (21) International Application Number: PCT/EP2017/064908 (22) International Filing Date: 19 June 2017 (19.06.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 16001379.3 20 June 2016 (20.06.2016) EP (71) Applicant: AZ ELECTRONIC MATERIALS (LUX- EMBOURG) S.A.R.L. [LU/LU]; 46 Place Guillaume II, 1648 Luxembourg (LU). (72) Inventors: YAMAMOTO, Kazuma; c/o Merck Perfor- mance Materials Ltd., 3330, Chihama, Kakegawa-shi, Shizuoka, 437-1412 (JP). MATSUURA, Yuriko; c/o Mer- ck Performance Materials Ltd., 3330, Chihama, Kakegawa- shi, Shizuoka, 437-1412 (JP). YASHIMA, Tomoyasu; c/o Merck Performance Materials Ltd., 3330, Chihama, Kakegawa-shi, Shizuoka, 437-1412 (JP). NAGAHARA, Tatsuro; c/o Merck Performance Materials Ltd., 3330, Chi- hama, Kakegawa-shi, Shizuoka, 437-1412 (JP). — = = - = (74) Agent: B2B PATENTS; c/o Merck Patent GmbH, 64271 Darmstadt (DE). — = Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, (81) = AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, = CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. = = = = = = = = = Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, (84) = — = UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). — 1-1 IN 71' 0 ei ei N (54) Title: A RINSE COMPOSITION, A METHOD FOR FORMING RESIST PATTERNS AND A METHOD FOR MAKING SEMI- CONDUCTOR DEVICES ei (57) : The present invention relates to a new rinse composition, the forming of resist patterns using the rinse composition, 0 a semiconductor device manufacturing method using the rinse composition in a photolithography method. and
SG11201810519XA 2016-06-20 2017-06-19 A rinse composition, a method for forming resist patterns and a method for making semiconductor devices SG11201810519XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP16001379 2016-06-20
PCT/EP2017/064908 WO2017220479A1 (en) 2016-06-20 2017-06-19 A rinse composition, a method for forming resist patterns and a method for making semiconductor devices

Publications (1)

Publication Number Publication Date
SG11201810519XA true SG11201810519XA (en) 2019-01-30

Family

ID=56321700

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201810519XA SG11201810519XA (en) 2016-06-20 2017-06-19 A rinse composition, a method for forming resist patterns and a method for making semiconductor devices

Country Status (8)

Country Link
US (1) US10451974B2 (en)
EP (1) EP3472671A1 (en)
JP (1) JP6533629B1 (en)
KR (1) KR102083151B1 (en)
CN (1) CN109313398B (en)
SG (1) SG11201810519XA (en)
TW (1) TWI717526B (en)
WO (1) WO2017220479A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020067547A (en) * 2018-10-24 2020-04-30 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ Semiconductor aqueous composition and use of the same
TW202035361A (en) * 2018-12-12 2020-10-01 美商3M新設資產公司 Fluorinated amine oxide surfactants
KR102100432B1 (en) * 2019-09-26 2020-05-15 영창케미칼 주식회사 Pross liquid composition for photolithography and pattern formation mehtod using the same
JP2021081545A (en) * 2019-11-18 2021-05-27 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ Replacement liquid between resist patterns, and method for producing resist patterns using the same
JP2021165771A (en) 2020-04-06 2021-10-14 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH Aqueous solution for manufacturing electronic apparatus, method for manufacturing resist pattern, and method for manufacturing device
KR102251232B1 (en) * 2020-09-11 2021-05-12 영창케미칼 주식회사 Process solution composition for extreme ultraviolet photolithography and pattern formation method using the same
IL309082A (en) 2021-07-15 2024-02-01 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for manufacturing resist pattern and method for manufacturing device
WO2023170021A1 (en) 2022-03-09 2023-09-14 Merck Patent Gmbh Electronic device manufacturing solution, method for manufacturing resist pattern, and method for manufacturing device
WO2024017921A1 (en) 2022-07-22 2024-01-25 Merck Patent Gmbh Developer tolerance resist underlayer composition and method for manufacturing resist pattern

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040029395A1 (en) * 2002-08-12 2004-02-12 Peng Zhang Process solutions containing acetylenic diol surfactants
US7521405B2 (en) 2002-08-12 2009-04-21 Air Products And Chemicals, Inc. Process solutions containing surfactants
JP4493393B2 (en) 2004-04-23 2010-06-30 東京応化工業株式会社 Rinsing liquid for lithography
JP4564489B2 (en) * 2004-04-23 2010-10-20 東京応化工業株式会社 Resist pattern forming method and rinse solution set
US20070292808A1 (en) * 2004-09-01 2007-12-20 Jun Koshiyama Developing Solution Composition for Lithography and Method for Resist Pattern Formation
JP4459857B2 (en) 2004-12-09 2010-04-28 東京応化工業株式会社 Lithographic cleaning liquid and resist pattern forming method using the same
JP5705607B2 (en) 2011-03-23 2015-04-22 メルクパフォーマンスマテリアルズＩｐ合同会社 Rinsing liquid for lithography and pattern forming method using the same
JP6106990B2 (en) 2012-08-27 2017-04-05 富士通株式会社 Lithographic rinse agent, resist pattern forming method, and semiconductor device manufacturing method
JP6240404B2 (en) * 2013-05-09 2017-11-29 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ Rinsing liquid for lithography and pattern forming method using the same

Also Published As

Publication number Publication date
KR102083151B1 (en) 2020-03-03
CN109313398B (en) 2022-08-02
JP6533629B1 (en) 2019-06-19
US10451974B2 (en) 2019-10-22
US20190250515A1 (en) 2019-08-15
KR20190020079A (en) 2019-02-27
WO2017220479A1 (en) 2017-12-28
EP3472671A1 (en) 2019-04-24
TW201809247A (en) 2018-03-16
CN109313398A (en) 2019-02-05
TWI717526B (en) 2021-02-01
JP2019519804A (en) 2019-07-11

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