SG11201906133PA - Gallium nitride expitaxial structures for power devices - Google Patents

Gallium nitride expitaxial structures for power devices

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Publication number
SG11201906133PA
SG11201906133PA SG11201906133PA SG11201906133PA SG11201906133PA SG 11201906133P A SG11201906133P A SG 11201906133PA SG 11201906133P A SG11201906133P A SG 11201906133PA SG 11201906133P A SG11201906133P A SG 11201906133PA SG 11201906133P A SG11201906133P A SG 11201906133PA
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SG
Singapore
Prior art keywords
international
qromis
walsh
santa clara
california
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Application number
SG11201906133PA
Inventor
Vladimir Odnoblyudov
Steve Lester
Ozgur Aktas
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Qromis Inc
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Application filed by Qromis Inc filed Critical Qromis Inc
Publication of SG11201906133PA publication Critical patent/SG11201906133PA/en

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    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)

Abstract

Title: GALLIUM NITRIDE EXPITAXIAL STRUCTURES FOR POWER DEVICES .1 09p:ea. AlGaN or InAIN 16 1 / 6 —j ' 6 %.:///; 4/ ././ .frter /0/0A Undeped GaN Buffer : Si 120 Conducting Channel (2DEG) 1Q structure (102) FIG. (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 26 July 2018 (26.07.2018) WIP0 I PCT ill IIIIIl °mons °nolo VIII imio oimIE (10) International Publication Number WO 2018/136278 Al (51) International Patent Classification: C30B 2 9 / 4 0 (2006.01) C30B 29/68 (2006.01) (21) International Application Number: PCT/US2018/013206 (22) International Filing Date: 10 January 2018 (10.01.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/447,857 18 January 2017 (18.01.2017) US 62/591,016 27 November 2017 (27.11.2017) US 15/864,977 08 January 2018 (08.01.2018) US (71) Applicant: QROMIS, INC. [US/US]; 2306 Walsh Av- enue, Santa Clara, California 95051 (US). (72) Inventors: ODNOBLYUDOV, Vladimir; c/o Qromis, Inc., 2306 Walsh Avenue, Santa Clara, California 95032 (US). LESTER, Steve; c/o Qromis, Inc., 2306 Walsh Av- enue, Santa Clara, California 95051 (US). AKTAS, Ozgur; c/o Qromis, Inc., 2306 Walsh Avenue, Santa Clara, Califor- nia 95051 (US). (74) Agent: LIU, Rong et al.; Kilpatrick Townsend & Stock- ton LLP, Mailstop: IP Docketing-22, 1100 Peachtree Street, Suite 2800, Atlanta, Georgia 30309 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, GaN Epi (140) 1-1 Engineered substrate N (57) : A method for making a multilayered device on an engineered substrate having a substrate coefficient of thermal ex- pansion includes growing a buffer layer on the engineered substrate, and growing a first epitaxial layer on the buffer layer. The first O epitaxial layer is characterized by an epitaxial coefficient of thermal expansion substantially equal to the substrate coefficient of thermal \" expansion. [Continued on next page] C WO 2018/136278 Al MIDEDIMOHNIMMUMMOMMIIMEDIMMIONEVOIS EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))
SG11201906133PA 2017-01-18 2018-01-10 Gallium nitride expitaxial structures for power devices SG11201906133PA (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762447857P 2017-01-18 2017-01-18
US201762591016P 2017-11-27 2017-11-27
US15/864,977 US10355120B2 (en) 2017-01-18 2018-01-08 Gallium nitride epitaxial structures for power devices
PCT/US2018/013206 WO2018136278A1 (en) 2017-01-18 2018-01-10 Gallium nitride expitaxial structures for power devices

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US (4) US10355120B2 (en)
EP (1) EP3571336A4 (en)
JP (2) JP7105239B2 (en)
KR (4) KR102458634B1 (en)
CN (2) CN110177905B (en)
SG (1) SG11201906133PA (en)
TW (2) TW202305205A (en)
WO (1) WO2018136278A1 (en)

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US10720520B2 (en) 2017-06-21 2020-07-21 Infineon Technologies Austria Ag Method of controlling wafer bow in a type III-V semiconductor device
FR3071854A1 (en) * 2017-10-03 2019-04-05 Commissariat A L'energie Atomique Et Aux Energies Alternatives METHOD FOR MANUFACTURING A HETEROJUNCTION ELECTRONIC COMPONENT HAVING AN ENTERREE BARRIER LAYER
CN111146282B (en) * 2018-11-06 2023-03-28 世界先进积体电路股份有限公司 High electron mobility transistor device and method of manufacturing the same
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US11380763B2 (en) * 2019-04-29 2022-07-05 Arizona Board Of Regents On Behalf Of Arizona State University Contact structures for n-type diamond
US11114555B2 (en) * 2019-08-20 2021-09-07 Vanguard International Semiconductor Corporation High electron mobility transistor device and methods for forming the same
WO2021243653A1 (en) * 2020-06-04 2021-12-09 英诺赛科（珠海）科技有限公司 Semiconductor apparatus and manufacturing method therefor
US11670505B2 (en) * 2020-08-28 2023-06-06 Vanguard International Semiconductor Corporation Semiconductor substrate, semiconductor device, and method for forming semiconductor structure
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