SG11201811295TA - Polycrystalline ceramic substrate and method of manufacture - Google Patents

Polycrystalline ceramic substrate and method of manufacture

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Publication number
SG11201811295TA
SG11201811295TA SG11201811295TA SG11201811295TA SG11201811295TA SG 11201811295T A SG11201811295T A SG 11201811295TA SG 11201811295T A SG11201811295T A SG 11201811295TA SG 11201811295T A SG11201811295T A SG 11201811295TA SG 11201811295T A SG11201811295T A SG 11201811295TA
Authority
SG
Singapore
Prior art keywords
international
quora
barrier layer
santa clara
ceramic substrate
Prior art date
Application number
SG11201811295TA
Inventor
Vladimir Odnoblyudov
Cem Basceri
Shari Farrens
Original Assignee
Qromis Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qromis Inc filed Critical Qromis Inc
Publication of SG11201811295TA publication Critical patent/SG11201811295TA/en

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    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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    • H01L33/0093—Wafer bonding; Removal of the growth substrate

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Recrystallisation Techniques (AREA)
  • Laminated Bodies (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Prostheses (AREA)

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property 111111101111 11 11111111111111 11111111111111111111111111111111111111111111111111111110111111 Organization International Bureau (10) International Publication Number (43) International Publication Date ......0\"\" WO 2017/222873 Al 28 December 2017 (28.12.2017) WIP0 I PCT — (51) (21) (22) (25) Filing Language: (26) (30) (71) (72) International Patent Classification: H01L 21/84 (2006.01) HO1L 27/12 (2006.01) H01L 21/20 (2006.01) H01L 33/02 (2010.01) (74) H01L 21/30 (2006.01) International Application Number: PCT/US2017/037213 (81) International Filing Date: 13 June 2017 (13.06.2017) English Publication Language: English Priority Data: 62/354,623 24 June 2016 (24.06.2016) US Applicant: QUORA TECHNOLOGY, INC. [US/US]; 2306 Walsh Avenue, Santa Clara, California 95051 (US). Inventors: ODNOBLYUDOV, Vladimir; c/o Quora (84) Technology, Inc., 2306 Walsh Avenue, Santa Clara, Cali- fornia 95032 (US). BASCERI, Cem; c/o Quora Technolo- gy, Inc., 2306 Walsh Avenue, Santa Clara, California 95051 (US). FARRENS, Shari; c/o Quora Technology, Inc., 2306 Walsh Avenue, Santa Clara, California 95051 (US). Agent: LARGENT, Craig C. et al.; Kilpatrick Townsend & Stockton LLP, Mailstop: IP Docketing-22, 1100 Peachtree Street, Suite 2800, Atlanta, Georgia 30309 (US). Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, = Title: : the bonding layer to expose at least a portion of the barrier layer and define fill regions, and depositing a second bonding at least a portion of the exposed barrier layer and the fill regions. (54) ---- substrate POLYCRYSTALLINE CERAMIC SUBSTRATE AND METHOD OF MANUFACTURE ......., 5 _ ceramic a portion layer on _ = • . . • 118 = = = = = f r ,ff \ - 116 iti 7 _ ,\" 114 ''\"--112 = = = = = 1 -1 M IN GC ei ei el (57) IN ,1 of 0 the ei • „ „ .4 112 114 A method of fabricating a ceramic substrate structure includes providing a ceramic substrate, encapsulating the in a barrier layer, and forming a bonding layer coupled to the barrier layer. The method further includes removing . 116 FIG. 1A 118 C [Continued on next page] WO 2017/222873 Al IMEDIMOM0101011MMEMODIMMOHMOHIIMOVOIMIE TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, SK, SM, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))
SG11201811295TA 2016-06-24 2017-06-13 Polycrystalline ceramic substrate and method of manufacture SG11201811295TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662354623P 2016-06-24 2016-06-24
PCT/US2017/037213 WO2017222873A1 (en) 2016-06-24 2017-06-13 Polycrystalline ceramic substrate and method of manufacture

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SG11201811295TA true SG11201811295TA (en) 2019-01-30

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US (5) US10134589B2 (en)
EP (2) EP3475975B1 (en)
JP (3) JP6719600B2 (en)
KR (3) KR102391997B1 (en)
CN (2) CN116936703A (en)
SG (1) SG11201811295TA (en)
TW (5) TWI767788B (en)
WO (1) WO2017222873A1 (en)

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US10290674B2 (en) 2016-04-22 2019-05-14 QROMIS, Inc. Engineered substrate including light emitting diode and power circuitry
KR102391997B1 (en) 2016-06-24 2022-04-28 큐로미스, 인크 Polycrystalline ceramic substrate and manufacturing method thereof
US10622468B2 (en) * 2017-02-21 2020-04-14 QROMIS, Inc. RF device integrated on an engineered substrate
US10411108B2 (en) 2017-03-29 2019-09-10 QROMIS, Inc. Vertical gallium nitride Schottky diode
JP7253870B2 (en) 2017-07-27 2023-04-07 三菱電機株式会社 Lighting fixtures and lighting devices
TWI789420B (en) * 2017-08-31 2023-01-11 美商康寧公司 Housings for portable electronic devices and methods for manufacturing the same
CN110473919A (en) * 2018-05-11 2019-11-19 世界先进积体电路股份有限公司 Semiconductor structure, high electron mobility transistor and semiconductor structure manufacturing method
CN110752251A (en) * 2018-07-24 2020-02-04 兆远科技股份有限公司 Composite substrate and method for manufacturing the same
US11688825B2 (en) 2019-01-31 2023-06-27 Industrial Technology Research Institute Composite substrate and light-emitting diode
CN111509095B (en) * 2019-01-31 2022-01-04 财团法人工业技术研究院 Composite substrate and manufacturing method thereof
TWI736962B (en) * 2019-01-31 2021-08-21 財團法人工業技術研究院 Composite substrate and manufacturing method thereof
TWI706563B (en) * 2019-03-25 2020-10-01 世界先進積體電路股份有限公司 Semiconducotr structure, high electron mobility transistor, and method for fabricating semiconductor structure
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