SG10201805220TA - Glass ceramic for ultraviolet lithography and method of manufacturing thereof - Google Patents
Glass ceramic for ultraviolet lithography and method of manufacturing thereofInfo
- Publication number
- SG10201805220TA SG10201805220TA SG10201805220TA SG10201805220TA SG10201805220TA SG 10201805220T A SG10201805220T A SG 10201805220TA SG 10201805220T A SG10201805220T A SG 10201805220TA SG 10201805220T A SG10201805220T A SG 10201805220TA SG 10201805220T A SG10201805220T A SG 10201805220TA
- Authority
- SG
- Singapore
- Prior art keywords
- manufacturing
- glass
- ultraviolet lithography
- glass ceramic
- ceramic
- Prior art date
Links
- 239000002241 glass-ceramic Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000000233 ultraviolet lithography Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0018—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and monovalent metal oxide as main constituents
- C03C10/0027—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and monovalent metal oxide as main constituents containing SiO2, Al2O3, Li2O as main constituents
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
- C03C17/30—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with silicon-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/213—SiO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/152—Deposition methods from the vapour phase by cvd
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/152—Deposition methods from the vapour phase by cvd
- C03C2218/1525—Deposition methods from the vapour phase by cvd by atmospheric CVD
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Dispersion Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Surface Treatment Of Glass (AREA)
- Glass Compositions (AREA)
Abstract
GLASS CERAMIC FOR ULTRAVIOLET LITHOGRAPHY AND METHOD OF MANUFACTURING THEREOF An extreme ultraviolet mask and method of manufacture thereof includes: providing a glass- ceramic block; forming a glass-ceramic substrate from the glass-ceramic block; and depositing a planarization layer on the glass-ceramic substrate. FIG. 2
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361919780P | 2013-12-22 | 2013-12-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201805220TA true SG10201805220TA (en) | 2018-08-30 |
Family
ID=53403782
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201805220TA SG10201805220TA (en) | 2013-12-22 | 2014-12-19 | Glass ceramic for ultraviolet lithography and method of manufacturing thereof |
SG11201604722WA SG11201604722WA (en) | 2013-12-22 | 2014-12-19 | Glass ceramic for ultraviolet lithography and method of manufacturing thereof |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201604722WA SG11201604722WA (en) | 2013-12-22 | 2014-12-19 | Glass ceramic for ultraviolet lithography and method of manufacturing thereof |
Country Status (7)
Country | Link |
---|---|
US (2) | US10551731B2 (en) |
JP (2) | JP6688221B2 (en) |
KR (1) | KR102279659B1 (en) |
CN (2) | CN112759278A (en) |
SG (2) | SG10201805220TA (en) |
TW (1) | TWI654151B (en) |
WO (1) | WO2015095803A1 (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102391997B1 (en) * | 2016-06-24 | 2022-04-28 | 큐로미스, 인크 | Polycrystalline ceramic substrate and manufacturing method thereof |
US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
WO2019036157A1 (en) | 2017-08-18 | 2019-02-21 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
EP4321649A3 (en) | 2017-11-11 | 2024-05-15 | Micromaterials LLC | Gas delivery system for high pressure processing chamber |
CN111432920A (en) | 2017-11-17 | 2020-07-17 | 应用材料公司 | Condenser system for high pressure processing system |
KR102539390B1 (en) * | 2018-02-22 | 2023-06-05 | 어플라이드 머티어리얼스, 인코포레이티드 | Methods for processing mask substrates to enable better film quality |
SG11202008256WA (en) | 2018-03-09 | 2020-09-29 | Applied Materials Inc | High pressure annealing process for metal containing materials |
TWI676237B (en) * | 2018-05-02 | 2019-11-01 | 世界先進積體電路股份有限公司 | Semiconductor devices, high electron mobility transistors and methods for fabricating semiconductor devices |
US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
US10453947B1 (en) | 2018-06-12 | 2019-10-22 | Vanguard International Semiconductor Corporation | Semiconductor structure and high electron mobility transistor with a substrate having a pit, and methods for fabricating semiconductor structure |
US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
DE102019110706A1 (en) | 2018-09-28 | 2020-04-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | METHOD FOR PRODUCING EUV PHOTO MASKS |
US11106126B2 (en) * | 2018-09-28 | 2021-08-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing EUV photo masks |
WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
TW202142949A (en) * | 2020-04-23 | 2021-11-16 | 美商應用材料股份有限公司 | Extreme ultraviolet mask blank defect reduction |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050118533A1 (en) * | 2002-03-01 | 2005-06-02 | Mirkarimi Paul B. | Planarization of substrate pits and scratches |
US20030164998A1 (en) * | 2002-03-01 | 2003-09-04 | The Regents Of The University Of California | Ion-assisted deposition techniques for the planarization of topological defects |
US6835503B2 (en) * | 2002-04-12 | 2004-12-28 | Micron Technology, Inc. | Use of a planarizing layer to improve multilayer performance in extreme ultra-violet masks |
US6908713B2 (en) * | 2003-02-05 | 2005-06-21 | Intel Corporation | EUV mask blank defect mitigation |
DE102004008824B4 (en) * | 2004-02-20 | 2006-05-04 | Schott Ag | Glass ceramic with low thermal expansion and their use |
US20050197424A1 (en) | 2004-03-05 | 2005-09-08 | Canon Kabushiki Kaisha | Ink composition, method of producing ink composition, method of applying liquid using the ink composition and apparatus therefor |
US7524735B1 (en) * | 2004-03-25 | 2009-04-28 | Novellus Systems, Inc | Flowable film dielectric gap fill process |
US7432201B2 (en) * | 2005-07-19 | 2008-10-07 | Applied Materials, Inc. | Hybrid PVD-CVD system |
US7712333B2 (en) * | 2006-03-29 | 2010-05-11 | Asahi Glass Company, Limited | Method for smoothing a surface of a glass substrate for a reflective mask blank used in EUV lithography |
US7825038B2 (en) * | 2006-05-30 | 2010-11-02 | Applied Materials, Inc. | Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen |
JP5076620B2 (en) * | 2006-06-07 | 2012-11-21 | 旭硝子株式会社 | Method for smoothing glass substrate surface |
JP2008118118A (en) | 2006-10-13 | 2008-05-22 | Asahi Glass Co Ltd | Method of smoothing surface of substrate for euv mask blank, and euv mask blank obtained by its method |
US8449942B2 (en) * | 2009-11-12 | 2013-05-28 | Applied Materials, Inc. | Methods of curing non-carbon flowable CVD films |
NL2007768A (en) | 2010-12-14 | 2012-06-18 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder. |
US9097994B2 (en) * | 2012-01-27 | 2015-08-04 | Sematech, Inc. | Abrasive-free planarization for EUV mask substrates |
-
2014
- 2014-12-19 SG SG10201805220TA patent/SG10201805220TA/en unknown
- 2014-12-19 CN CN202011604055.5A patent/CN112759278A/en active Pending
- 2014-12-19 US US15/107,054 patent/US10551731B2/en active Active
- 2014-12-19 KR KR1020167019830A patent/KR102279659B1/en active IP Right Grant
- 2014-12-19 WO PCT/US2014/071690 patent/WO2015095803A1/en active Application Filing
- 2014-12-19 JP JP2016539964A patent/JP6688221B2/en active Active
- 2014-12-19 CN CN201480070431.3A patent/CN105829259A/en active Pending
- 2014-12-19 SG SG11201604722WA patent/SG11201604722WA/en unknown
- 2014-12-22 TW TW103144828A patent/TWI654151B/en active
-
2019
- 2019-12-19 US US16/720,251 patent/US11493841B2/en active Active
-
2020
- 2020-04-03 JP JP2020067278A patent/JP6889792B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP6688221B2 (en) | 2020-04-28 |
JP6889792B2 (en) | 2021-06-18 |
TWI654151B (en) | 2019-03-21 |
SG11201604722WA (en) | 2016-07-28 |
JP2020117435A (en) | 2020-08-06 |
TW201529506A (en) | 2015-08-01 |
CN112759278A (en) | 2021-05-07 |
JP2017501954A (en) | 2017-01-19 |
CN105829259A (en) | 2016-08-03 |
WO2015095803A1 (en) | 2015-06-25 |
US20200142292A1 (en) | 2020-05-07 |
KR20160102496A (en) | 2016-08-30 |
KR102279659B1 (en) | 2021-07-19 |
US11493841B2 (en) | 2022-11-08 |
US10551731B2 (en) | 2020-02-04 |
US20160377972A1 (en) | 2016-12-29 |
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