JP2015115373A - 半導体装置および半導体装置の製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 230
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 239000012535 impurity Substances 0.000 claims abstract description 39
- 239000002344 surface layer Substances 0.000 claims abstract description 20
- 230000008021 deposition Effects 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 239000012212 insulator Substances 0.000 claims abstract description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 152
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 150
- 239000010410 layer Substances 0.000 claims description 116
- 230000015556 catabolic process Effects 0.000 claims description 66
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 14
- 239000002131 composite material Substances 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims 2
- 150000001875 compounds Chemical group 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 239000011229 interlayer Substances 0.000 description 14
- 238000005468 ion implantation Methods 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 230000005684 electric field Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 230000001133 acceleration Effects 0.000 description 6
- 238000002513 implantation Methods 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 230000002040 relaxant effect Effects 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
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Abstract
【解決手段】半導体装置は、第1導電型の半導体基板1と、半導体基板1の表面上の低不純物濃度の第1導電型の半導体堆積膜2と、半導体堆積膜2に形成されるデバイスの終端構造と、を有する。この半導体装置は、半導体堆積膜2の表面層に形成された金属/半導体接合、または金属/半導体接合と絶縁体/半導体接合の複合構造を含む活性領域101を少なくとも部分的に取り囲む第1の第2導電型領域3と、半導体堆積膜2上の活性領域101を囲む耐圧構造部102に形成された第2の第2導電型領域13と、第2の第2導電型領域13の下部に位置し、半導体堆積膜2の表面層で第1の第2導電型領域3の周囲に、互いに接触しないよう所定間隔を有して形成された、第2の第2導電型領域13よりも高不純物濃度の複数の第3の第2導電型領域5と、を有する。
【選択図】図1
Description
以下に添付図面を参照して、この発明にかかる半導体装置および半導体装置の製造方法の好適な実施の形態を詳細に説明する。本明細書および添付図面においては、nまたはpを冠記した層や領域では、それぞれ電子または正孔が多数キャリアであることを意味する。また、nやpに付す+および−は、それぞれそれが付されていない層や領域よりも高不純物濃度および低不純物濃度であることを意味する。なお、以下の実施の形態の説明および添付図面において、同様の構成には同一の符号を付し、重複する説明を省略する。また、本明細書では、ミラー指数の表記において、“−”はその直後の指数につくバーを意味しており、指数の前に“−”を付けることで負の指数をあらわしている。
本発明にかかる半導体装置は、シリコンよりもバンドギャップが広い半導体(ワイドバンドギャップ半導体)を用いて構成される。実施の形態1においては、ワイドバンドギャップ半導体として例えば炭化珪素(SiC)を用いて作製された炭化珪素半導体装置について、接合障壁ショットキー(JBS:Junction Barrier Schottky)構造のダイオードを例に説明する。
図5は、実施の形態2にかかる炭化珪素半導体装置の構成を示す断面図である。実施の形態2にかかる炭化珪素半導体装置が実施の形態1にかかる炭化珪素半導体装置と異なる点は、ダイオードの素子構造に代えて、MOSFETの素子構成を形成した点である。実施の形態2にかかる炭化珪素半導体装置については、縦型プレーナーゲート構造のMOSFETを例に説明する。実施の形態2においては、n+型炭化珪素基板1、n型炭化珪素エピタキシャル層2および後述するpベース層となるp型炭化珪素エピタキシャル層13を併せて炭化珪素半導体基体とする。
次に、低濃度p型エピタキシャル層をFLR構造の上部にp型炭化珪素エピタキシャル層13として形成した場合とp型炭化珪素エピタキシャル層13がない場合による炭化珪素半導体装置の耐圧特性について検証した。図6Aは、実施例にかかる炭化珪素半導体装置の耐圧構造部の構成を示す断面図である。図6Bは、比較例にかかる炭化珪素半導体装置の耐圧構造部の構成を示す断面図である。
2 n型炭化珪素エピタキシャル層
3 活性領域の周辺部に設けられたp+型領域
4 JBS構造用のp+型領域
5 FLR構造用のp+型領域
6 層間絶縁膜
7 裏面電極
8 オーミック接合
9 ショットキー電極
10 電極パッド
11 保護膜
12 pベース層(基板)
13 pベース層
14 n+ソース領域
15 p+コンタクト領域
16 nウェル領域
17 ゲート絶縁膜
18 ゲート電極
19 ソース電極
20 層間絶縁膜
21 電極バッド
22 保護膜
101 活性領域
102 耐圧構造部
Claims (8)
- シリコンよりもバンドギャップが広い半導体からなる第1導電型の半導体基板と、前記半導体基板の表面上に形成された、シリコンよりもバンドギャップが広い半導体からなり、かつ前記半導体基板よりも低不純物濃度の第1導電型の半導体堆積膜と、前記半導体堆積膜に形成されるデバイスの終端構造と、を有する半導体装置において、
前記半導体堆積膜の表面層に形成された金属/半導体接合、または金属/半導体接合と絶縁体/半導体接合の複合構造を含む活性領域を少なくとも部分的に取り囲む第1の第2導電型領域と、
前記半導体堆積膜上の前記活性領域を囲む耐圧構造部に形成された第2の第2導電型領域と、
前記第2の第2導電型領域の下部に位置し、前記半導体堆積膜の表面層で前記第1の第2導電型領域の周囲に、互いに接触しないよう所定間隔を有して形成された、前記第2の第2導電型領域よりも高不純物濃度の複数の第3の第2導電型領域と、
を有することを特徴とする半導体装置。 - 前記活性領域に形成される構造は、
前記半導体堆積層の表面層に選択的に形成された高不純物濃度の第2導電型半導体領域と、
前記半導体堆積層ならびに前記第2導電型半導体領域の上に位置し、第2導電型で比較的低不純物濃度の半導体層と、
前記半導体層の表面層に選択的に形成された第1導電型のソース領域と、
前記半導体堆積層上の前記半導体層を貫通して前記半導体堆積層に達するように形成された第1導電型のウェル領域と、
前記ソース領域と前記ウェル領域とに挟まれた前記半導体層の表面露出部上の少なくとも一部にゲート絶縁膜を介して設けられたゲート電極層と、
前記ソース領域と前記半導体層との表面に共通に接触するソース電極と、
前記半導体基板の裏面に設けられたドレイン電極と、
を有する縦型絶縁ゲート型電界効果トランジスタの耐圧構造であることを特徴とする請求項1に記載の半導体装置。 - 前記活性領域において前記半導体堆積膜の少なくとも一部が金属堆積膜と接合され、前記半導体堆積膜と前記金属堆積膜との界面がショットキー界面となっていることを特徴とする請求項1に記載の半導体装置。
- 複数の前記第3の第2導電型領域は、前記活性領域から外側につれて互いの間隔が広がって形成されたことを特徴とする請求項1〜3のいずれか一つに記載の半導体装置。
- 前記半導体基板が炭化珪素であることを特徴とする請求項1〜4のいずれか一つに記載の半導体装置。
- 前記半導体基板の結晶学的面指数は(000−1)に対して平行な面、もしくは10度以内に傾いた面であることを特徴とする請求項5に記載の半導体装置。
- シリコンよりもバンドギャップが広い半導体からなる第1導電型の半導体基板と、前記半導体基板の表面上に形成された、シリコンよりもバンドギャップが広い半導体からなり、かつ前記半導体基板よりも低不純物濃度の第1導電型の半導体堆積膜と、前記半導体堆積膜に形成されるデバイスの終端構造と、を有する半導体装置の製造方法において、
前記半導体堆積膜の表面層に、金属/半導体接合、または金属/半導体接合と絶縁体/半導体接合の複合構造を含む活性領域を少なくとも部分的に取り囲み第1の第2導電型領域を形成する工程と、
前記半導体堆積膜の表面層の前記活性領域を囲む耐圧構造部で前記第1の第2導電型領域の周囲に、互いに接触しないよう所定間隔を有して複数の第2の第2導電型領域を形成する工程と、
前記半導体堆積膜の、前記第2の第2導電型領域が形成された部分の上に、低不純物濃度の第2導電型領域を形成する工程と、
を含むことを特徴とする半導体装置の製造方法。 - 前記第2の第2導電型領域を形成する工程は、前記活性領域に所定の間隔で複数設けられるJBS構造の第4の第2導電型領域を同時に形成することを特徴とする請求項7に記載の半導体装置の製造方法。
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