JP2013251407A - 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置および炭化珪素半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 101
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000010410 layer Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000002344 surface layer Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- 238000000151 deposition Methods 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 230000015556 catabolic process Effects 0.000 description 20
- 239000010936 titanium Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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Abstract
【解決手段】炭化珪素基板基体の表面層には、p+型領域3、p型領域4、およびp-型領域5が設けられ、これらは、活性領域を囲む耐圧構造部に設けられショットキー接合の素子構造を構成する。p-型領域5は、p+型領域3、p型領域4を囲み接合終端(JTE)構造を構成する。ショットキー電極7は、n型炭化珪素エピタキシャル層2とショットキー接合を形成する。ショットキー電極7および電極パッド8は、端部がp+型領域3に位置し、電極パッド8の端部8aからショットキー電極7の端部7aを露出させる。
【選択図】図1
Description
1.Tiをスパッタにより堆積
2.レジスト塗布、フォトリソグラフィーによりレジストパターニング
3.アンモニア過水によりTiをウェットエッチングしてショットキー電極17を形成
4.Al−Siをスパッタにより堆積
5.レジスト塗布、フォトリソグラフィーによりレジストパターニング
6.ショットキー電極17を覆うように、リン酸・硝酸・酢酸の混合液によりAl−Siをウェットエッチングする。この時、Tiは混合液によりウェットエッチングされることはない。この後、残留したSi(Siノジュールと呼ぶ)を除去するために、四フッ化炭素と酸素を原料ガスとするドライエッチング(パーティクルエッチング)を行って電極パッド18を形成する。
本発明にかかる半導体装置は、ワイドバンドギャップ半導体を用いて構成される。実施の形態においては、ワイドバンドギャップ半導体として例えば炭化珪素(SiC)を用いて作製された炭化珪素半導体装置について、ショットキー接合(Schottky)構造のダイオードを例に説明する。図1は、実施の形態にかかる炭化珪素半導体装置の構成を示す断面図である。図1に示すように、実施の形態にかかる炭化珪素半導体装置は、n+型炭化珪素基板(ワイドバンドギャップ半導体基板)1の主面上にn型炭化珪素エピタキシャル層(ワイドバンドギャップ半導体堆積層)2が堆積されている。
1.Tiをスパッタにより堆積
2.レジスト塗布、フォトリソグラフィーによりレジストパターニング
3.アンモニア過水によりTiをウェットエッチングしてショットキー電極7を形成
4.Al−Siをスパッタにより堆積
5.レジスト塗布、フォトリソグラフィーによりレジストパターニング
6.ショットキー電極7を覆うように、リン酸・硝酸・酢酸の混合液によりAl−Siをウェットエッチングする。この時、Tiは混合液によりウェットエッチングされることはない。この後、残留したSi(Siノジュールと呼ぶ)を除去するために、四フッ化炭素と酸素を原料ガスとするドライエッチング(パーティクルエッチング)を行って電極パッド8を形成する。
2 n型炭化珪素エピタキシャル層
3 p+型領域
4 p型領域
5 p-型領域
6 層間絶縁膜
7 ショットキー電極
7a ショットキー電極の端部
8 電極パッド
8a 電極パッドの端部
9 保護膜
10 裏面電極
Claims (2)
- 第1導電型ワイドバンドギャップ半導体基板と、
前記第1導電型ワイドバンドギャップ半導体基板の表面に堆積された、前記第1導電型ワイドバンドギャップ半導体基板よりも不純物濃度の低い第1導電型ワイドバンドギャップ半導体堆積層と、
前記第1導電型ワイドバンドギャップ半導体堆積層とショットキー接合を形成する第1金属膜を形成して構成された素子構造と、
前記第1金属膜上に形成される電極用の第2金属膜と、
前記第1導電型ワイドバンドギャップ半導体堆積層の、前記第1導電型ワイドバンドギャップ半導体基板側に対して反対側の表面層に選択的に設けられ、前記素子構造の周辺部を囲む第1の第2導電型半導体領域と、
前記第1の第2導電型半導体領域の周辺部を囲み接合終端構造を構成する、第2の第2導電型半導体領域と、
を備え、
前記第1金属膜および前記第2金属膜の端部は、前記第1の第2導電型半導体領域上に位置するとともに、前記第2金属膜の端部から前記第1金属膜の端部を露出させたことを特徴とする炭化珪素半導体装置。 - 第1導電型ワイドバンドギャップ半導体基板の表面に、前記第1導電型ワイドバンドギャップ半導体基板よりも不純物濃度の低い第1導電型ワイドバンドギャップ半導体堆積層を堆積する工程と、
前記第1導電型ワイドバンドギャップ半導体堆積層とショットキー接合を形成する第1金属膜を形成し、素子構造を形成する工程と、
前記第1金属膜上に電極用の第2金属膜を形成する工程と、
前記第1導電型ワイドバンドギャップ半導体堆積層の表面層に、前記素子構造の周辺部を囲むように、第1の第2導電型半導体領域を選択的に形成する工程と、
前記第1導電型ワイドバンドギャップ半導体堆積層の表面層に、前記第1の第2導電型半導体領域の周辺部を囲み接合終端構造を構成する、前記第1の第2導電型半導体領域よりも不純物濃度の低い第2の第2導電型半導体領域を選択的に形成する工程と、
を含み、
前記第1金属膜および前記第2金属膜の端部は、前記第1の第2導電型半導体領域上に位置させるとともに、前記第2金属膜の端部から前記第1金属膜の端部を露出させることを特徴とする炭化珪素半導体装置の製造方法。
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PCT/JP2013/057748 WO2013179729A1 (ja) | 2012-05-31 | 2013-03-18 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
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JP2017055026A (ja) * | 2015-09-11 | 2017-03-16 | 株式会社東芝 | 半導体装置 |
JP2017168669A (ja) * | 2016-03-16 | 2017-09-21 | 株式会社東芝 | 半導体装置 |
US10276470B2 (en) | 2016-12-19 | 2019-04-30 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device having an electric field relaxation structure |
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US9991399B2 (en) * | 2012-10-04 | 2018-06-05 | Cree, Inc. | Passivation structure for semiconductor devices |
CN104134703A (zh) * | 2014-08-08 | 2014-11-05 | 上海安微电子有限公司 | 一种低漏电低正向压降肖特基二极管结构及其制备方法 |
JP7099158B2 (ja) * | 2018-08-09 | 2022-07-12 | 富士電機株式会社 | 模擬素子及び抵抗素子の不良検査方法 |
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US20150115287A1 (en) | 2015-04-30 |
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WO2013179729A1 (ja) | 2013-12-05 |
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