JP2017168669A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2017168669A JP2017168669A JP2016053108A JP2016053108A JP2017168669A JP 2017168669 A JP2017168669 A JP 2017168669A JP 2016053108 A JP2016053108 A JP 2016053108A JP 2016053108 A JP2016053108 A JP 2016053108A JP 2017168669 A JP2017168669 A JP 2017168669A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 104
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 101
- 239000012535 impurity Substances 0.000 claims abstract description 68
- 229920005989 resin Polymers 0.000 claims abstract description 20
- 239000011347 resin Substances 0.000 claims abstract description 20
- 229920001721 polyimide Polymers 0.000 claims description 43
- 230000005684 electric field Effects 0.000 description 31
- 239000010410 layer Substances 0.000 description 27
- 230000015556 catabolic process Effects 0.000 description 13
- 238000007789 sealing Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910021334 nickel silicide Inorganic materials 0.000 description 4
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000004645 scanning capacitance microscopy Methods 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 210000000746 body region Anatomy 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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- H—ELECTRICITY
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
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- H—ELECTRICITY
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
Abstract
Description
本実施形態の半導体装置は、第1の面と第2の面とを有する炭化珪素層と、第1の面に接する第1の電極と、第2の面に接する第2の電極と、炭化珪素層内に設けられた第1導電型の第1の炭化珪素領域と、第1の面と第1の炭化珪素領域の間に第1の面に接して設けられ、第1の電極と接し、少なくとも一部が第1の電極と第1の面とが接する領域を囲んで設けられた第2導電型の第2の炭化珪素領域と、第1の面と第1の炭化珪素領域の間に第1の面に接して設けられ、第2の炭化珪素領域を囲んで設けられ、第2の炭化珪素領域の第2導電型の不純物濃度よりも第2導電型の不純物濃度の低い第3の炭化珪素領域と、第1の炭化珪素領域との間に第2の炭化珪素領域及び第3の炭化珪素領域とが位置するように設けられ、第1の領域と第1の領域の膜厚よりも膜厚の厚い第2の領域とを有し、第2の領域と第1の炭化珪素領域との間に第2の炭化珪素領域と第3の炭化珪素領域の境界が位置する樹脂膜と、を備える。
本実施形態の半導体装置は、第2の領域の膜厚が、第3の領域の膜厚よりも厚いこと以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
(第3の実施形態)
本実施形態の半導体装置は、炭化珪素層の第1の面と第1の炭化珪素領域との間に、p型のアノード領域を備えるPINダイオードである点で、第1の実施形態と異なっている。以下、第1の実施形態と重複する内容については一部記述を省略する。
本実施形態の半導体装置は、MOSFETである点で、第1の実施形態と異なっている。以下、第1の実施形態と重複する内容については一部記述を省略する。
12 アノード電極(第1の電極)
13 ソース電極(第1の電極)
14 カソード電極(第2の電極)
15 ドレイン電極(第2の電極)
16 フィールド絶縁膜(無機絶縁膜)
18 ポリイミド膜(樹脂膜)
18a 第1の領域
18b 第2の領域
18c 第3の領域
22 n−型のドリフト領域(第1の炭化珪素領域)
24 p+型のエッジ領域(第2の炭化珪素領域)
26 p型の第1のリサーフ領域(第3の炭化珪素領域)
28 p−型の第2のリサーフ領域(第4の炭化珪素領域)
40 領域
100 SBD(半導体装置)
200 SBD(半導体装置)
300 PINダイオード(半導体装置)
400 MOSFET(半導体装置)
B1 第1の境界(境界)
B2 第2の境界(境界)
P1 第1の面
P2 第2の面
PR1 第1の凸部(凸部)
Claims (8)
- 第1の面と第2の面とを有する炭化珪素層と、
前記第1の面に接する第1の電極と、
前記第2の面に接する第2の電極と、
前記炭化珪素層内に設けられた第1導電型の第1の炭化珪素領域と、
前記第1の面と前記第1の炭化珪素領域の間に前記第1の面に接して設けられ、前記第1の電極と接し、少なくとも一部が前記第1の電極と前記第1の面とが接する領域を囲んで設けられた第2導電型の第2の炭化珪素領域と、
前記第1の面と前記第1の炭化珪素領域の間に前記第1の面に接して設けられ、前記第2の炭化珪素領域を囲んで設けられ、前記第2の炭化珪素領域の第2導電型の不純物濃度よりも第2導電型の不純物濃度の低い第3の炭化珪素領域と、
前記第1の炭化珪素領域との間に前記第2の炭化珪素領域及び前記第3の炭化珪素領域とが位置するように設けられ、第1の領域と前記第1の領域の膜厚よりも膜厚の厚い第2の領域とを有し、前記第2の領域と前記第1の炭化珪素領域との間に前記第2の炭化珪素領域と前記第3の炭化珪素領域の境界が位置する樹脂膜と、
を備える半導体装置。 - 前記樹脂膜の表面に凸部が存在し、前記第2の領域の表面が前記凸部である請求項1記載の半導体装置。
- 前記第2の領域の膜厚は前記第1の領域の膜厚の1.5倍以上である請求項1又は請求項2記載の半導体装置。
- 前記第2の領域の膜厚は7.5μm以上である請求項1乃至請求項3いずれか一項記載の半導体装置。
- 前記第1の面と前記第1の炭化珪素領域の間に前記第1の面に接して設けられ、前記第3の炭化珪素領域を囲んで設けられ、前記第3の炭化珪素領域の第2導電型の不純物濃度よりも第2導電型の不純物濃度の低い第4の炭化珪素領域を、更に備え、
前記樹脂膜が、前記第1の領域の膜厚よりも膜厚の厚い第3の領域を有し、前記第3の領域と前記第1の炭化珪素領域との間に前記第3の炭化珪素領域と前記第4の炭化珪素領域の境界が位置する請求項1乃至請求項4いずれか一項記載の半導体装置。 - 前記第2の領域の膜厚が、前記第3の領域の膜厚よりも厚い請求項5記載の半導体装置。
- 前記樹脂膜は、ポリイミド膜である請求項1乃至請求項6いずれか一項記載の半導体装置。
- 前記樹脂膜と、前記第2の炭化珪素領域及び前記第3の炭化珪素領域との間に、無機絶縁膜を、更に備える請求項1乃至請求項7いずれか一項記載の半導体装置。
Priority Applications (2)
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JP2016053108A JP6524002B2 (ja) | 2016-03-16 | 2016-03-16 | 半導体装置 |
US15/247,772 US20170271443A1 (en) | 2016-03-16 | 2016-08-25 | Semiconductor device |
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JP2016053108A JP6524002B2 (ja) | 2016-03-16 | 2016-03-16 | 半導体装置 |
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JP2017168669A true JP2017168669A (ja) | 2017-09-21 |
JP6524002B2 JP6524002B2 (ja) | 2019-06-05 |
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JP (1) | JP6524002B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020012812A1 (ja) * | 2018-07-11 | 2020-01-16 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
WO2020035938A1 (ja) * | 2018-08-17 | 2020-02-20 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
US11804555B2 (en) | 2019-01-29 | 2023-10-31 | Mitsubishi Electric Corporation | Semiconductor device and power conversion device |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2019054170A (ja) * | 2017-09-15 | 2019-04-04 | 株式会社東芝 | 半導体装置 |
EP3690957A1 (en) * | 2019-02-01 | 2020-08-05 | ABB Schweiz AG | Passivation layer for spark prevention |
Citations (3)
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WO2009101668A1 (ja) * | 2008-02-12 | 2009-08-20 | Mitsubishi Electric Corporation | 炭化珪素半導体装置 |
JP2013222731A (ja) * | 2012-04-12 | 2013-10-28 | National Institute Of Advanced Industrial & Technology | ワイドバンドギャップ半導体装置およびその製造方法 |
JP2013251407A (ja) * | 2012-05-31 | 2013-12-12 | National Institute Of Advanced Industrial & Technology | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
-
2016
- 2016-03-16 JP JP2016053108A patent/JP6524002B2/ja active Active
- 2016-08-25 US US15/247,772 patent/US20170271443A1/en not_active Abandoned
Patent Citations (3)
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WO2009101668A1 (ja) * | 2008-02-12 | 2009-08-20 | Mitsubishi Electric Corporation | 炭化珪素半導体装置 |
JP2013222731A (ja) * | 2012-04-12 | 2013-10-28 | National Institute Of Advanced Industrial & Technology | ワイドバンドギャップ半導体装置およびその製造方法 |
JP2013251407A (ja) * | 2012-05-31 | 2013-12-12 | National Institute Of Advanced Industrial & Technology | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020012812A1 (ja) * | 2018-07-11 | 2020-01-16 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
JPWO2020012812A1 (ja) * | 2018-07-11 | 2021-07-08 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
US11387156B2 (en) | 2018-07-11 | 2022-07-12 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device including a resin covering a silicon carbide semiconductor chip |
JP7248026B2 (ja) | 2018-07-11 | 2023-03-29 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
WO2020035938A1 (ja) * | 2018-08-17 | 2020-02-20 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
JPWO2020035938A1 (ja) * | 2018-08-17 | 2021-02-15 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
JP6995209B2 (ja) | 2018-08-17 | 2022-01-14 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
US11804555B2 (en) | 2019-01-29 | 2023-10-31 | Mitsubishi Electric Corporation | Semiconductor device and power conversion device |
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