JP5642191B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5642191B2 JP5642191B2 JP2012542735A JP2012542735A JP5642191B2 JP 5642191 B2 JP5642191 B2 JP 5642191B2 JP 2012542735 A JP2012542735 A JP 2012542735A JP 2012542735 A JP2012542735 A JP 2012542735A JP 5642191 B2 JP5642191 B2 JP 5642191B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- semiconductor
- region
- semiconductor device
- semiconductor region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 250
- 239000012535 impurity Substances 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 36
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 230000015556 catabolic process Effects 0.000 description 31
- 230000005684 electric field Effects 0.000 description 21
- 238000010586 diagram Methods 0.000 description 16
- 230000000694 effects Effects 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 8
- 238000002513 implantation Methods 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 230000004913 activation Effects 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000007142 ring opening reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8083—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
Description
2 n−型SiCドリフト層
3 p型半導体領域
4 p型終端領域
5 アノード電極
6 カソード電極
7 絶縁膜
8 n−型第1半導体層
9 n−型第2半導体層
10 マスク材料
11 p型半導体領域
12 n+型半導体領域(ソース)
13 ドレイン電極
14 ゲート電極
15 ゲート絶縁膜
Claims (11)
- 炭化珪素から成る第1導電型の半導体基板と、
第1不純物濃度の第1半導体領域と、前記第1不純物濃度よりも高く、かつ、表面に接する第2半導体領域とを含む、前記半導体基板上に形成された前記第1導電型のドリフト層と、
通電時に電流が流れるアクティブ領域と、
前記アクティブ領域の外周部に接合終端構造を形成する前記第1導電型とは逆の第2導電型の第3半導体領域とを備え、
前記第2半導体領域は、前記外周部に延在し、
前記第3半導体領域は、前記第2半導体領域の内部に形成されていることを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
さらに、前記アクティブ領域上に形成され、前記第1半導体領域とショットキー接続をなすショットキー電極と、
前記ショットキー電極の端部近傍に形成され、前記第3半導体領域と接する前記第2導電型の第4半導体領域を備え、
前記第4半導体領域は、前記第2半導体領域の内部に形成されていることを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
さらに、前記アクティブ領域の前記第2半導体領域の表面付近に、所定の幅と間隔で複数配置された前記第2導電型の第5半導体領域群を備えることを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記アクティブ領域内にはJFETが形成され、前記JFETのソース領域は前記第2半導体領域の内部に形成されていることを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記アクティブ領域内にはMOSFETが形成され、前記MOSFETのソース領域は前記第2半導体領域の内部に形成されていることを特徴とする半導体装置。 - 炭化珪素から成る第1導電型の半導体基板と、
前記半導体基板上に形成され、第1不純物濃度の前記第1導電型のドリフト層と、
通電時に電流が流れるアクティブ領域と、
前記アクティブ領域の外周部に接合終端構造を形成する前記第1導電型とは逆の第2導電型の第1半導体領域と、
前記第1不純物濃度よりも高い、前記第1導電型の第2半導体領域とを備え、
前記第1半導体領域は、前記アクティブ領域から遠い側の端部の底面から表面にかけて、前記第2半導体領域で囲まれていることを特徴とする半導体装置。 - 請求項6記載の半導体装置において、
前記第2半導体領域は、前記第1半導体領域が形成されている範囲内に端部を有することを特徴とする半導体装置。 - 請求項6記載の半導体装置において、
さらに、前記アクティブ領域上に形成され、前記ドリフト層とショットキー接続をなすショットキー電極と、
前記ショットキー電極の端部近傍に形成され、前記第1半導体領域と接する前記第2導電型の第3半導体領域を備え、
前記第2半導体領域は、前記第3半導体領域が形成されている範囲内に端部を有することを特徴とする半導体装置。 - 請求項6記載の半導体装置において、
前記アクティブ領域には、前記第2半導体領域が延在していないことを特徴とする半導体装置。 - 請求項6記載の半導体装置において、
前記アクティブ領域には、ダイオード、JFET、若しくは、MOSFETが形成されていることを特徴とする半導体装置。 - 請求項9記載の半導体装置において、 前記アクティブ領域には、ダイオード、JFET、若しくは、MOSFETが形成されていることを特徴とする半導体装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2010/069855 WO2012063310A1 (ja) | 2010-11-08 | 2010-11-08 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2012063310A1 JPWO2012063310A1 (ja) | 2014-05-12 |
JP5642191B2 true JP5642191B2 (ja) | 2014-12-17 |
Family
ID=46050493
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012542735A Expired - Fee Related JP5642191B2 (ja) | 2010-11-08 | 2010-11-08 | 半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8890169B2 (ja) |
JP (1) | JP5642191B2 (ja) |
DE (1) | DE112010005980T5 (ja) |
WO (1) | WO2012063310A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11322581B2 (en) | 2020-03-04 | 2022-05-03 | Kabushiki Kaisha Toshiba | Semiconductor device |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5510404B2 (ja) | 2011-07-11 | 2014-06-04 | トヨタ自動車株式会社 | 半導体装置、及び、半導体装置の製造方法 |
JP5954140B2 (ja) * | 2012-11-29 | 2016-07-20 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
JP2015222784A (ja) * | 2014-05-23 | 2015-12-10 | 新日本無線株式会社 | シリコンカーバイドショットキーバリアダイオード |
WO2016143020A1 (ja) * | 2015-03-09 | 2016-09-15 | 株式会社日立製作所 | 放射線検出器およびそれを用いた放射線検出装置 |
US10128340B2 (en) | 2015-03-18 | 2018-11-13 | Mitsubishi Electric Corporation | Power semiconductor device |
JP2017011060A (ja) * | 2015-06-19 | 2017-01-12 | 住友電気工業株式会社 | ショットキーバリアダイオード |
US10541300B2 (en) * | 2016-05-26 | 2020-01-21 | General Electric Company | Semiconductor device and method of making thereof |
JP6559286B2 (ja) * | 2018-04-02 | 2019-08-14 | 三菱電機株式会社 | 電力用半導体装置 |
JP2018125553A (ja) * | 2018-04-05 | 2018-08-09 | 富士電機株式会社 | 炭化珪素半導体装置 |
US11817478B2 (en) | 2020-12-23 | 2023-11-14 | Semiconductor Components Industries, Llc | Termination structures with reduced dynamic output capacitance loss |
US11955567B2 (en) | 2022-02-16 | 2024-04-09 | Leap Semiconductor Corp. | Wide-band gap semiconductor device and method of manufacturing the same |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001196604A (ja) * | 2000-01-12 | 2001-07-19 | Hitachi Ltd | 半導体装置 |
JP2006100593A (ja) * | 2004-09-29 | 2006-04-13 | Toshiba Corp | 高耐圧半導体装置 |
JP2006332217A (ja) * | 2005-05-25 | 2006-12-07 | Hitachi Ltd | 高耐圧p型MOSFET及びそれを用いた電力変換装置 |
JP2008277352A (ja) * | 2007-04-25 | 2008-11-13 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2009105200A (ja) * | 2007-10-23 | 2009-05-14 | Hitachi Ltd | ジャンクションバリアショットキーダイオード |
JP2010232355A (ja) * | 2009-03-26 | 2010-10-14 | Toshiba Corp | 半導体装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6521923B1 (en) * | 2002-05-25 | 2003-02-18 | Sirenza Microdevices, Inc. | Microwave field effect transistor structure on silicon carbide substrate |
JP4241158B2 (ja) | 2003-04-17 | 2009-03-18 | 三菱電機株式会社 | 半導体装置 |
US7727904B2 (en) * | 2005-09-16 | 2010-06-01 | Cree, Inc. | Methods of forming SiC MOSFETs with high inversion layer mobility |
WO2008020911A2 (en) * | 2006-08-17 | 2008-02-21 | Cree, Inc. | High power insulated gate bipolar transistors |
JP5324157B2 (ja) | 2008-08-04 | 2013-10-23 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
WO2011061918A1 (ja) * | 2009-11-17 | 2011-05-26 | パナソニック株式会社 | 半導体素子及びその製造方法 |
CN103548145B (zh) * | 2011-06-23 | 2016-08-31 | 三菱电机株式会社 | 半导体装置以及半导体装置的制造方法 |
JP5869291B2 (ja) * | 2011-10-14 | 2016-02-24 | 富士電機株式会社 | 半導体装置 |
JP2013235895A (ja) * | 2012-05-07 | 2013-11-21 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
-
2010
- 2010-11-08 JP JP2012542735A patent/JP5642191B2/ja not_active Expired - Fee Related
- 2010-11-08 DE DE112010005980T patent/DE112010005980T5/de not_active Withdrawn
- 2010-11-08 US US13/883,572 patent/US8890169B2/en not_active Expired - Fee Related
- 2010-11-08 WO PCT/JP2010/069855 patent/WO2012063310A1/ja active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001196604A (ja) * | 2000-01-12 | 2001-07-19 | Hitachi Ltd | 半導体装置 |
JP2006100593A (ja) * | 2004-09-29 | 2006-04-13 | Toshiba Corp | 高耐圧半導体装置 |
JP2006332217A (ja) * | 2005-05-25 | 2006-12-07 | Hitachi Ltd | 高耐圧p型MOSFET及びそれを用いた電力変換装置 |
JP2008277352A (ja) * | 2007-04-25 | 2008-11-13 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2009105200A (ja) * | 2007-10-23 | 2009-05-14 | Hitachi Ltd | ジャンクションバリアショットキーダイオード |
JP2010232355A (ja) * | 2009-03-26 | 2010-10-14 | Toshiba Corp | 半導体装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11322581B2 (en) | 2020-03-04 | 2022-05-03 | Kabushiki Kaisha Toshiba | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
DE112010005980T5 (de) | 2013-08-14 |
US8890169B2 (en) | 2014-11-18 |
JPWO2012063310A1 (ja) | 2014-05-12 |
WO2012063310A1 (ja) | 2012-05-18 |
US20130285071A1 (en) | 2013-10-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5642191B2 (ja) | 半導体装置 | |
US9087911B2 (en) | Trench shield connected JFET | |
JP6021032B2 (ja) | 半導体素子およびその製造方法 | |
US9059284B2 (en) | Semiconductor device | |
JP5452718B2 (ja) | 半導体装置 | |
US8933466B2 (en) | Semiconductor element | |
CN106796955B (zh) | 半导体装置 | |
US9825164B2 (en) | Silicon carbide semiconductor device and manufacturing method for same | |
JP5646044B2 (ja) | 炭化珪素半導体装置およびその製造方法 | |
JP6705155B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP6802454B2 (ja) | 半導体装置およびその製造方法 | |
JP2015185700A (ja) | 半導体装置 | |
WO2014207793A1 (ja) | 半導体装置およびその製造方法 | |
JP5547022B2 (ja) | 半導体装置 | |
JPWO2015056318A1 (ja) | 炭化珪素半導体装置 | |
JP2012238898A (ja) | ワイドバンドギャップ半導体縦型mosfet | |
JP5755722B2 (ja) | 半導体装置 | |
WO2014184839A1 (ja) | 炭化珪素半導体装置 | |
JP6651801B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP6606819B2 (ja) | 半導体装置 | |
CN112514037A (zh) | 半导体装置及其制造方法 | |
JP2011003919A (ja) | 半導体装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140708 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140902 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20141014 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20141028 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5642191 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |