JP6802454B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP6802454B2 JP6802454B2 JP2016155089A JP2016155089A JP6802454B2 JP 6802454 B2 JP6802454 B2 JP 6802454B2 JP 2016155089 A JP2016155089 A JP 2016155089A JP 2016155089 A JP2016155089 A JP 2016155089A JP 6802454 B2 JP6802454 B2 JP 6802454B2
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- 239000004065 semiconductor Substances 0.000 title claims description 155
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000012535 impurity Substances 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 173
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 46
- 229910010271 silicon carbide Inorganic materials 0.000 description 44
- 108091006146 Channels Proteins 0.000 description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 230000000694 effects Effects 0.000 description 12
- 238000000059 patterning Methods 0.000 description 11
- 230000003071 parasitic effect Effects 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
Description
本発明にかかる半導体装置は、ワイドバンドギャップ半導体を用いて構成される。実施の形態においては、ワイドバンドギャップ半導体として例えば炭化珪素(SiC)を用いて作製された炭化珪素半導体装置について、MOSFETを例に説明する。以下、実施の形態にかかる活性領域の構造について、第1導電型をn型とし、第2導電型をp型とした例について説明する。
2 n+型炭化珪素基板
3 pベース層(p+層)
3a 第1pベース層
3b 第2pベース層
15 n型CSL層(n層)
15a 第1CSL層(n層)
15b 第2CSL層(n-層)
16 p型チャネル領域(p層)
17 n型ソース領域(n+層)
18 p+層
19 トレンチ
20 ゲート電極
21 層間絶縁膜(フィールド絶縁膜)
22 ソース電極
Claims (3)
- 電流が流れる活性領域を有する半導体装置であって、
前記活性領域は、第1導電型の半導体基板のおもて面に形成され、前記半導体基板より低濃度の第1導電型の第1半導体層と、
チャネル領域となる第2導電型のチャネル領域と、
前記第2導電型のチャネル領域に接するように形成され、酸化膜およびゲート電極で充填されたトレンチと、
前記トレンチの下部および前記トレンチの間に配置された第2導電型の第2半導体層と、
前記トレンチの間に配置された前記第2導電型の第2半導体層および前記第2導電型のチャネル領域と接するように形成された第2導電型の第3半導体層と、
前記第2導電型のチャネル領域、前記第2導電型の第3半導体層および前記トレンチとそれぞれ接し、前記第2導電型の第2半導体層に接するかもしくは前記半導体基板の表面側に配置された第1導電型の第2半導体層と、
前記第1導電型の第2半導体層、前記第1導電型の第1半導体層および前記第2導電型の第2半導体層とそれぞれ接し、前記第1導電型の第2半導体層および前記第1導電型の第1半導体層よりも不純物濃度が高い第1導電型の第3半導体層と、を有し、
前記トレンチの下部は、前記第2導電型の第2半導体層内部に入り込み、当該第2導電型の第2半導体層を貫かない範囲の深さに設けられ、
前記第1導電型の第3半導体層の深さは、前記第2導電型の第2半導体層の深さよりも深く、
前記第1導電型の第3半導体層は、前記第2導電型の第2半導体層と前記第1導電型の第1半導体層との間に延在することを特徴とする半導体装置。 - 前記第1導電型の第2半導体層の不純物濃度は、前記第1導電型の第3半導体層の不純物濃度に対して1.0〜0.5倍であることを特徴とする請求項1に記載の半導体装置。
- 電流が流れる活性領域を有する半導体装置の製造方法であって、
前記活性領域において、第1導電型の半導体基板のおもて面に前記半導体基板より低濃度の第1導電型の第1半導体層を形成する工程と、
前記第1半導体層のおもて面に当該第1半導体層よりも不純物濃度が高い第1導電型の第3半導体層を形成する工程と、
前記第1導電型の第3半導体層を貫かない範囲の深さで、前記第1導電型の第3半導体層に第2導電型の第2半導体層を複数形成する工程と、
前記第1導電型の第3半導体層のおもて面に当該第1導電型の第3半導体層よりも不純物濃度が低い第1導電型の第2半導体層を形成する工程と、
前記第1導電型の第2半導体層に、複数の前記第2導電型の第2半導体層のうち一部が接する第2導電型の第3半導体層を形成する工程と、
前記第1導電型の第2半導体層のおもて面にチャネル領域となる第2導電型のチャネル領域を形成する工程と、
前記チャネル領域に接するように形成され、前記第2導電型の第2半導体層の複数のうち他の一部の内部に入り込み、当該第2導電型の第2半導体層を貫かない範囲の深さを有し、酸化膜およびゲート電極で充填されたトレンチを形成する工程と、
を含むことを特徴とする半導体装置の製造方法。
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