JP2019216223A - 半導体装置 - Google Patents
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7806—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a Schottky barrier diode
Abstract
Description
本発明にかかる半導体装置は、ワイドバンドギャップ半導体を用いて構成される。実施の形態1においては、ワイドバンドギャップ半導体として例えば炭化珪素(SiC)を用いて作製された炭化珪素半導体装置について、MOSFETを例に説明する。図1は、実施の形態1にかかる炭化珪素半導体装置の構成を示す図3のY−Y’断面図である。図2は、実施の形態1にかかる炭化珪素半導体装置の構成を示す図3のX−X’断面図である。図3は、実施の形態1にかかる炭化珪素半導体装置の構成を示す上面図である。
次に、実施の形態1にかかる炭化珪素半導体装置の製造方法について説明する。図6〜図10は、実施の形態1にかかる炭化珪素半導体装置の製造途中の状態を模式的に示す断面図である。
次に、実施の形態2にかかる炭化珪素半導体装置の構造について説明する。図11は、実施の形態2にかかる炭化珪素半導体装置のゲートパッド部の構成を示す断面図である。図12は、実施の形態2にかかる炭化珪素半導体装置のゲートパッド部の他の構成を示す断面図である。実施の形態2にかかる炭化珪素半導体装置の活性部21の構造は、実施の形態1と同様であるため記載を省略する(図1参照)。実施の形態2にかかる炭化珪素半導体装置が実施の形態1にかかる炭化珪素半導体装置と異なる点は、ゲートパッド部20にコンタクトトレンチ19が設けられておらず、ゲートパッド部20のp型領域(p+型ベース領域3’、p型ベース層6’)がフローティングとなっている点である。
2 n-型ドリフト層
3、3’ p+型ベース領域
5 n型高濃度領域
6、6’ p型ベース層
7 n+型ソース領域
8 p+型コンタクト領域
9 ゲート絶縁膜
10 ゲート電極
11 層間絶縁膜
12 バリアメタル
13 ソース電極
14 ソース電極パッド
15 導電層
16 フィールド酸化膜
17 ゲート電極パッド
18 ゲートトレンチ
19 コンタクトトレンチ
20 ゲートパッド部
21 活性部
24 ソースコンタクト部
25 n+型領域
Claims (6)
- 第1導電型の半導体基板と、
前記半導体基板のおもて面に設けられた、前記半導体基板より不純物濃度の低い第1導電型の第1半導体層と、
前記第1半導体層の、前記半導体基板側に対して反対側に設けられた第2導電型の第2半導体層と、
前記第2半導体層の内部に選択的に設けられた、前記第1半導体層よりも不純物濃度の高い第1導電型の第1半導体領域と、
前記第2半導体層の、前記半導体基板側に対して反対側にゲート絶縁膜を介して設けられたゲート電極と、
前記第2半導体層と前記第1半導体領域の表面に設けられた第1電極と、
前記第1半導体層に接する導電層と、
前記導電層と前記第1半導体層とのショットキー接合で構成されたショットキーバリアダイオードと、
を備え、
前記ショットキーバリアダイオードは、前記ゲート電極と電気的に接続されるゲートパッド部および主電流が流れる活性部に設けられ、
前記ゲートパッド部に設けられた前記ショットキーバリアダイオードは、前記ゲートパッド部の周辺で前記第1電極と電気的に接続されることを特徴とする半導体装置。 - 前記第1半導体領域および前記第2半導体層を貫通して前記第1半導体層に達する複数のトレンチと、
前記第1半導体層の内部に、前記第2半導体層と離して選択的に設けられた、前記トレンチの底面を覆う第2導電型の第2半導体領域と、
を備え、
前記ゲート電極は、複数の前記トレンチのうちの一部の第1トレンチの内部にゲート絶縁膜を介して設けられ、
前記導電層は、複数の前記トレンチのうちの、前記第1トレンチ以外の第2トレンチの内部に設けられることを特徴とする請求項1に記載の半導体装置。 - 前記ゲートパッド部に設けられた前記第2トレンチの底面を覆う前記第2半導体領域間の幅は、前記活性部に設けられた前記第2トレンチの底面を覆う前記第2半導体領域と前記活性部に設けられた前記第1トレンチの底面を覆う前記第2半導体領域との間の幅より狭いことを特徴とする請求項2に記載の半導体装置。
- 前記活性部に設けられた前記第2トレンチの内部に設けられた前記導電層および前記ゲートパッド部に設けられた前記第2トレンチの内部に設けられた前記導電層は、異なる材料による電極を積層していることを特徴とする請求項2または3に記載の半導体装置。
- 第1導電型の半導体基板と、
前記半導体基板のおもて面に設けられた、前記半導体基板より不純物濃度の低い第1導電型の第1半導体層と、
前記第1半導体層の、前記半導体基板側に対して反対側に設けられた第2導電型の第2半導体層と、
前記第2半導体層の内部に選択的に設けられた、前記第1半導体層よりも不純物濃度の高い第1導電型の第1半導体領域と、
前記第2半導体層の、前記半導体基板側に対して反対側にゲート絶縁膜を介して設けられたゲート電極と、
前記第2半導体層と前記第1半導体領域の表面に設けられた第1電極と、
前記第1半導体層に接する導電層と、
前記導電層と前記第1半導体層とのショットキー接合で構成されたショットキーバリアダイオードと、
を備え、
前記ゲート電極と電気的に接続されるゲートパッド部に、前記第2半導体層と分離して所定の距離離れている第2導電型の第3半導体領域を有することを特徴とする半導体装置。 - 前記第1半導体領域および前記第2半導体層を貫通して前記第1半導体層に達する複数のトレンチと、
前記第1半導体層の内部に、前記第2半導体層と離して選択的に設けられた、前記トレンチの底面を覆う第2導電型の第2半導体領域と、
を備え、
前記ゲート電極は、複数の前記トレンチのうちの一部の第1トレンチの内部にゲート絶縁膜を介して設けられ、
前記所定の距離は、主電流が流れる活性部に設けられた前記第2半導体領域間の幅より狭いことを特徴とする請求項5に記載の半導体装置。
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7047981B1 (ja) * | 2021-02-04 | 2022-04-05 | 三菱電機株式会社 | 炭化珪素半導体装置および電力変換装置 |
US11489071B2 (en) | 2020-06-26 | 2022-11-01 | Fuji Electric Co., Ltd. | Semiconductor device |
WO2023140254A1 (ja) * | 2022-01-20 | 2023-07-27 | 富士電機株式会社 | 半導体装置 |
WO2023219135A1 (ja) * | 2022-05-13 | 2023-11-16 | 株式会社日立製作所 | 電力変換装置、電力変換装置の制御方法、半導体装置および半導体装置の制御方法 |
Citations (5)
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JP2014135367A (ja) * | 2013-01-09 | 2014-07-24 | Toyota Motor Corp | 半導体装置 |
WO2014163060A1 (ja) * | 2013-03-31 | 2014-10-09 | 新電元工業株式会社 | 半導体装置 |
WO2014162969A1 (ja) * | 2013-04-03 | 2014-10-09 | 三菱電機株式会社 | 半導体装置 |
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WO2014162969A1 (ja) * | 2013-04-03 | 2014-10-09 | 三菱電機株式会社 | 半導体装置 |
WO2016006696A1 (ja) * | 2014-07-11 | 2016-01-14 | 新電元工業株式会社 | 半導体装置及び半導体装置の製造方法 |
JP2017079251A (ja) * | 2015-10-20 | 2017-04-27 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
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US11489071B2 (en) | 2020-06-26 | 2022-11-01 | Fuji Electric Co., Ltd. | Semiconductor device |
US11908929B2 (en) | 2020-06-26 | 2024-02-20 | Fuji Electric Co., Ltd. | Semiconductor device |
JP7047981B1 (ja) * | 2021-02-04 | 2022-04-05 | 三菱電機株式会社 | 炭化珪素半導体装置および電力変換装置 |
WO2022168240A1 (ja) * | 2021-02-04 | 2022-08-11 | 三菱電機株式会社 | 炭化珪素半導体装置および電力変換装置 |
WO2023140254A1 (ja) * | 2022-01-20 | 2023-07-27 | 富士電機株式会社 | 半導体装置 |
WO2023140253A1 (ja) * | 2022-01-20 | 2023-07-27 | 富士電機株式会社 | 半導体装置 |
WO2023219135A1 (ja) * | 2022-05-13 | 2023-11-16 | 株式会社日立製作所 | 電力変換装置、電力変換装置の制御方法、半導体装置および半導体装置の制御方法 |
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