JP2006100593A - 高耐圧半導体装置 - Google Patents
高耐圧半導体装置 Download PDFInfo
- Publication number
- JP2006100593A JP2006100593A JP2004285245A JP2004285245A JP2006100593A JP 2006100593 A JP2006100593 A JP 2006100593A JP 2004285245 A JP2004285245 A JP 2004285245A JP 2004285245 A JP2004285245 A JP 2004285245A JP 2006100593 A JP2006100593 A JP 2006100593A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silicon carbide
- semiconductor device
- type
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 81
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 80
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 230000015556 catabolic process Effects 0.000 claims description 21
- 239000000463 material Substances 0.000 abstract description 7
- 230000005684 electric field Effects 0.000 description 15
- 230000000694 effects Effects 0.000 description 7
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 6
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 108091006146 Channels Proteins 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05567—Disposition the external layer being at least partially embedded in the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/06181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Abstract
【解決手段】 高耐圧半導体装置は、法線の方向が<0001>方向および<000−1>方向とは異なる主面を備えた炭化珪素基板1と、炭化珪素基板2上に形成された第1導電型の炭化珪素層2と、炭化珪素層2の表面に形成され、<0001>方向および<000−1>方向に対する主面のオフ角方向の幅の方が、オフ角方向と反対側の幅よりも広い第2導電型の半導体層3を含む接合終端領域JTEと、炭化珪素層3に設けられた第1の電極6と、炭化珪素基板2に設けられた第2の電極とを備えている。
【選択図】 図2
Description
SiC素子の基礎と応用、荒井和雄編、ページ165〜168
本願において開示される発明のうち、代表的なものの概要を簡単に説明すれば下記の通りである。
本発明によれば、必要以上に大きな接合終端領域を形成せずに、デバイス終端部における電界集中を緩和できるので、無駄な接合終端領域を減らすことができる。無駄な接合終端領域が減ることにより、コストは下がる。
図1は、本発明の第1の実施形態に係る高耐圧半導体装置を示す平面図である。また、図2は、図1の平面図の矢視A−A’断面図である。
図5は、本発明の第3の実施形態に係る高耐圧半導体装置を示す平面図である。また、図6は、図5の平面図の矢視B−B’断面図である。なお、以下の図において、既出の図と対応する部分には既出の図と同一符号を付してあり、詳細な説明は省略する。
図7は、本発明の第2の実施形態に係る高耐圧半導体装置を断面図である。
Claims (6)
- 法線の方向が<0001>方向および<000−1>方向とは異なる主面を備えた炭化珪素基板と、
前記炭化珪素基板上に形成された第1導電型の炭化珪素層と、
前記炭化珪素層の表面に形成され、前記<0001>方向および前記<000−1>方向に対する前記主面のオフ角方向の幅の方が、前記オフ角方向と反対側の幅よりも広い第2導電型の半導体層を含む接合終端領域と、
前記炭化珪素層に設けられた第1の電極と、
前記炭化珪素基板に設けられた第2の電極と
を具備してなることを特徴とする高耐圧半導体装置。 - 前記炭化珪素層と前記第1の電極とはショットキー接触されていることを特徴とする請求項1に記載の高耐圧半導体装置。
- 前記炭化珪素基板は第一導電型であり、前記炭化珪素層の表面に選択的に形成された第2導電型のウェルと、該ウェルの表面に選択的に形成された第1導電型のソース層と、該ソース層と前記炭化珪素層とで挟まれた前記ウェル上にゲート絶縁膜を介して設けられたゲート電極とをさらに具備してなることを特徴とする請求項1に記載の高耐圧半導体装置。
- 前記炭化珪素基板は第二導電型であり、前記炭化珪素層の表面に選択的に形成された第2導電型のウェルと、該ウェルの表面に選択的に形成された第1導電型のソース層と、該ソース層と前記炭化珪素層とで挟まれた前記ウェル上にゲート絶縁膜を介して設けられたゲート電極とをさらに具備してなることを特徴とする請求項1に記載の高耐圧半導体装置。
- 前記炭化珪素層は、エピタキシャル成長層であることを特徴とする請求項1ないし4のいずれか1項に記載の高耐圧半導体装置。
- 前記半導体層は、リサーフ層であることを特徴とする請求項1ないし4のいずれか1項に記載の高耐圧半導体装置
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004285245A JP3914226B2 (ja) | 2004-09-29 | 2004-09-29 | 高耐圧半導体装置 |
US11/234,238 US7649213B2 (en) | 2004-09-29 | 2005-09-26 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004285245A JP3914226B2 (ja) | 2004-09-29 | 2004-09-29 | 高耐圧半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006100593A true JP2006100593A (ja) | 2006-04-13 |
JP3914226B2 JP3914226B2 (ja) | 2007-05-16 |
Family
ID=36098024
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004285245A Expired - Fee Related JP3914226B2 (ja) | 2004-09-29 | 2004-09-29 | 高耐圧半導体装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7649213B2 (ja) |
JP (1) | JP3914226B2 (ja) |
Cited By (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008034646A (ja) * | 2006-07-28 | 2008-02-14 | Toshiba Corp | 高耐圧半導体装置 |
JP2008218700A (ja) * | 2007-03-05 | 2008-09-18 | Mitsubishi Electric Corp | 炭化珪素半導体装置の製造方法 |
WO2009101668A1 (ja) * | 2008-02-12 | 2009-08-20 | Mitsubishi Electric Corporation | 炭化珪素半導体装置 |
JP2009206223A (ja) * | 2008-02-27 | 2009-09-10 | New Japan Radio Co Ltd | 半導体装置 |
JP2009545885A (ja) * | 2006-07-31 | 2009-12-24 | ヴィシェイ−シリコニックス | SiCショットキーダイオード用モリブデンバリア金属および製造方法 |
JP2010080786A (ja) * | 2008-09-26 | 2010-04-08 | Toshiba Corp | 半導体装置 |
JP2010212331A (ja) * | 2009-03-09 | 2010-09-24 | Nissan Motor Co Ltd | 半導体装置 |
JP2010219365A (ja) * | 2009-03-18 | 2010-09-30 | New Japan Radio Co Ltd | 半導体装置およびその製造方法 |
WO2012063310A1 (ja) * | 2010-11-08 | 2012-05-18 | 株式会社日立製作所 | 半導体装置 |
JP2012190983A (ja) * | 2011-03-10 | 2012-10-04 | Toshiba Corp | 半導体装置 |
WO2013168795A1 (ja) * | 2012-05-11 | 2013-11-14 | ローム株式会社 | 半導体装置 |
JP2014508411A (ja) * | 2011-02-10 | 2014-04-03 | クリー インコーポレイテッド | 保護リング延長部を含む接合部終端構造及びそれを組み込む電子デバイスの製作方法 |
WO2014136344A1 (ja) * | 2013-03-05 | 2014-09-12 | 株式会社日立パワーデバイス | 半導体装置 |
JP2014530483A (ja) * | 2011-09-09 | 2014-11-17 | クリー インコーポレイテッドCree Inc. | 非注入障壁領域を含む半導体デバイス及びその製造方法 |
JP2015126192A (ja) * | 2013-12-27 | 2015-07-06 | 株式会社豊田中央研究所 | 縦型半導体装置 |
US9412880B2 (en) | 2004-10-21 | 2016-08-09 | Vishay-Siliconix | Schottky diode with improved surge capability |
US9419092B2 (en) | 2005-03-04 | 2016-08-16 | Vishay-Siliconix | Termination for SiC trench devices |
US9472403B2 (en) | 2005-03-04 | 2016-10-18 | Siliconix Technology C.V. | Power semiconductor switch with plurality of trenches |
US9496421B2 (en) | 2004-10-21 | 2016-11-15 | Siliconix Technology C.V. | Solderable top metal for silicon carbide semiconductor devices |
US9570560B2 (en) | 2009-05-12 | 2017-02-14 | Cree, Inc. | Diffused junction termination structures for silicon carbide devices |
US9627553B2 (en) | 2005-10-20 | 2017-04-18 | Siliconix Technology C.V. | Silicon carbide schottky diode |
US9640609B2 (en) | 2008-02-26 | 2017-05-02 | Cree, Inc. | Double guard ring edge termination for silicon carbide devices |
JP2018190994A (ja) * | 2018-07-10 | 2018-11-29 | 株式会社東芝 | 半導体装置 |
JP2019176165A (ja) * | 2011-05-18 | 2019-10-10 | ローム株式会社 | 半導体装置 |
US10741686B2 (en) | 2015-09-14 | 2020-08-11 | Kabushiki Kaisha Toshiba | Method for manufacturing semiconductor device and semiconductor device |
CN111584623A (zh) * | 2020-06-02 | 2020-08-25 | 吉林华微电子股份有限公司 | 一种双极结型晶体管器件及其制造方法、电子产品 |
US20210313418A1 (en) * | 2012-03-12 | 2021-10-07 | Rohm Co., Ltd. | Semiconductor device, and method for manufacturing semiconductor device |
JP2022130748A (ja) * | 2021-03-18 | 2022-09-06 | ローム株式会社 | 半導体装置の製造方法 |
JP2022130747A (ja) * | 2021-03-18 | 2022-09-06 | ローム株式会社 | 半導体装置 |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7274083B1 (en) * | 2006-05-02 | 2007-09-25 | Semisouth Laboratories, Inc. | Semiconductor device with surge current protection and method of making the same |
JP4189415B2 (ja) * | 2006-06-30 | 2008-12-03 | 株式会社東芝 | 半導体装置 |
US8432012B2 (en) | 2006-08-01 | 2013-04-30 | Cree, Inc. | Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same |
US7728402B2 (en) * | 2006-08-01 | 2010-06-01 | Cree, Inc. | Semiconductor devices including schottky diodes with controlled breakdown |
EP2052414B1 (en) * | 2006-08-17 | 2016-03-30 | Cree, Inc. | High power insulated gate bipolar transistors |
US8835987B2 (en) | 2007-02-27 | 2014-09-16 | Cree, Inc. | Insulated gate bipolar transistors including current suppressing layers |
JP4356764B2 (ja) * | 2007-04-18 | 2009-11-04 | 株式会社デンソー | 炭化珪素半導体装置 |
JP2009267032A (ja) * | 2008-04-24 | 2009-11-12 | Toyota Motor Corp | 半導体装置とその製造方法 |
US8232558B2 (en) | 2008-05-21 | 2012-07-31 | Cree, Inc. | Junction barrier Schottky diodes with current surge capability |
DE102008025243B3 (de) * | 2008-05-27 | 2009-12-10 | Siced Electronics Development Gmbh & Co. Kg | Halbleiterbauelement mit asymmetrischem Randabschluss |
US8097919B2 (en) | 2008-08-11 | 2012-01-17 | Cree, Inc. | Mesa termination structures for power semiconductor devices including mesa step buffers |
US8106487B2 (en) * | 2008-12-23 | 2012-01-31 | Pratt & Whitney Rocketdyne, Inc. | Semiconductor device having an inorganic coating layer applied over a junction termination extension |
US8294507B2 (en) | 2009-05-08 | 2012-10-23 | Cree, Inc. | Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits |
US8629509B2 (en) * | 2009-06-02 | 2014-01-14 | Cree, Inc. | High voltage insulated gate bipolar transistors with minority carrier diverter |
US8193848B2 (en) | 2009-06-02 | 2012-06-05 | Cree, Inc. | Power switching devices having controllable surge current capabilities |
US8541787B2 (en) * | 2009-07-15 | 2013-09-24 | Cree, Inc. | High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability |
US8354690B2 (en) | 2009-08-31 | 2013-01-15 | Cree, Inc. | Solid-state pinch off thyristor circuits |
CN102136495B (zh) * | 2010-01-25 | 2013-02-13 | 上海华虹Nec电子有限公司 | 半导体高压器件的结构及其制作方法 |
US9117739B2 (en) * | 2010-03-08 | 2015-08-25 | Cree, Inc. | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
JP5072991B2 (ja) * | 2010-03-10 | 2012-11-14 | 株式会社東芝 | 半導体装置 |
US8415671B2 (en) | 2010-04-16 | 2013-04-09 | Cree, Inc. | Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices |
JP5858934B2 (ja) | 2011-02-02 | 2016-02-10 | ローム株式会社 | 半導体パワーデバイスおよびその製造方法 |
JP5306392B2 (ja) * | 2011-03-03 | 2013-10-02 | 株式会社東芝 | 半導体整流装置 |
US9318623B2 (en) | 2011-04-05 | 2016-04-19 | Cree, Inc. | Recessed termination structures and methods of fabricating electronic devices including recessed termination structures |
US9142662B2 (en) | 2011-05-06 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with low source resistance |
US9673283B2 (en) | 2011-05-06 | 2017-06-06 | Cree, Inc. | Power module for supporting high current densities |
US9029945B2 (en) | 2011-05-06 | 2015-05-12 | Cree, Inc. | Field effect transistor devices with low source resistance |
US8680587B2 (en) | 2011-09-11 | 2014-03-25 | Cree, Inc. | Schottky diode |
US9640617B2 (en) | 2011-09-11 | 2017-05-02 | Cree, Inc. | High performance power module |
US8664665B2 (en) | 2011-09-11 | 2014-03-04 | Cree, Inc. | Schottky diode employing recesses for elements of junction barrier array |
US9373617B2 (en) | 2011-09-11 | 2016-06-21 | Cree, Inc. | High current, low switching loss SiC power module |
US8618582B2 (en) | 2011-09-11 | 2013-12-31 | Cree, Inc. | Edge termination structure employing recesses for edge termination elements |
US9799733B2 (en) | 2012-06-06 | 2017-10-24 | Rohm Co., Ltd. | Semiconductor device having a junction portion contacting a schottky metal |
JP2014060361A (ja) * | 2012-09-19 | 2014-04-03 | Toshiba Corp | 半導体装置 |
JP5983415B2 (ja) * | 2013-01-15 | 2016-08-31 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
JP6222771B2 (ja) * | 2013-11-22 | 2017-11-01 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体装置の製造方法 |
JP6265274B2 (ja) | 2014-09-17 | 2018-01-24 | 富士電機株式会社 | 半導体装置 |
JP6673174B2 (ja) * | 2016-12-12 | 2020-03-25 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
CN108336090B (zh) * | 2017-01-20 | 2020-09-08 | 清华大学 | 肖特基二极管及肖特基二极管阵列 |
CN108336142B (zh) * | 2017-01-20 | 2020-09-25 | 清华大学 | 薄膜晶体管 |
CN108336150B (zh) * | 2017-01-20 | 2020-09-29 | 清华大学 | 肖特基二极管、肖特基二极管阵列及肖特基二极管的制备方法 |
US11164979B1 (en) * | 2020-08-06 | 2021-11-02 | Vanguard International Semiconductor Corporation | Semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002261295A (ja) * | 2001-03-05 | 2002-09-13 | Shikusuon:Kk | ショットキーダイオード、pn接合ダイオード、pin接合ダイオード、および製造方法 |
JP2003174175A (ja) * | 2001-12-05 | 2003-06-20 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2134705B (en) * | 1983-01-28 | 1985-12-24 | Philips Electronic Associated | Semiconductor devices |
US4912064A (en) * | 1987-10-26 | 1990-03-27 | North Carolina State University | Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon |
JP2004063860A (ja) | 2002-07-30 | 2004-02-26 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
-
2004
- 2004-09-29 JP JP2004285245A patent/JP3914226B2/ja not_active Expired - Fee Related
-
2005
- 2005-09-26 US US11/234,238 patent/US7649213B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002261295A (ja) * | 2001-03-05 | 2002-09-13 | Shikusuon:Kk | ショットキーダイオード、pn接合ダイオード、pin接合ダイオード、および製造方法 |
JP2003174175A (ja) * | 2001-12-05 | 2003-06-20 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
Cited By (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9496421B2 (en) | 2004-10-21 | 2016-11-15 | Siliconix Technology C.V. | Solderable top metal for silicon carbide semiconductor devices |
US9412880B2 (en) | 2004-10-21 | 2016-08-09 | Vishay-Siliconix | Schottky diode with improved surge capability |
US9472403B2 (en) | 2005-03-04 | 2016-10-18 | Siliconix Technology C.V. | Power semiconductor switch with plurality of trenches |
US9419092B2 (en) | 2005-03-04 | 2016-08-16 | Vishay-Siliconix | Termination for SiC trench devices |
US9627553B2 (en) | 2005-10-20 | 2017-04-18 | Siliconix Technology C.V. | Silicon carbide schottky diode |
JP2008034646A (ja) * | 2006-07-28 | 2008-02-14 | Toshiba Corp | 高耐圧半導体装置 |
US9627552B2 (en) | 2006-07-31 | 2017-04-18 | Vishay-Siliconix | Molybdenum barrier metal for SiC Schottky diode and process of manufacture |
JP2009545885A (ja) * | 2006-07-31 | 2009-12-24 | ヴィシェイ−シリコニックス | SiCショットキーダイオード用モリブデンバリア金属および製造方法 |
JP2008218700A (ja) * | 2007-03-05 | 2008-09-18 | Mitsubishi Electric Corp | 炭化珪素半導体装置の製造方法 |
CN101946322B (zh) * | 2008-02-12 | 2012-12-19 | 三菱电机株式会社 | 碳化硅半导体装置 |
JP5177151B2 (ja) * | 2008-02-12 | 2013-04-03 | 三菱電機株式会社 | 炭化珪素半導体装置 |
KR101190942B1 (ko) | 2008-02-12 | 2012-10-12 | 미쓰비시덴키 가부시키가이샤 | 탄화규소 반도체 장치 |
US8680538B2 (en) | 2008-02-12 | 2014-03-25 | Mitsubishi Electric Corporation | Silicon carbide semiconductor device |
WO2009101668A1 (ja) * | 2008-02-12 | 2009-08-20 | Mitsubishi Electric Corporation | 炭化珪素半導体装置 |
US9640609B2 (en) | 2008-02-26 | 2017-05-02 | Cree, Inc. | Double guard ring edge termination for silicon carbide devices |
JP2009206223A (ja) * | 2008-02-27 | 2009-09-10 | New Japan Radio Co Ltd | 半導体装置 |
JP2010080786A (ja) * | 2008-09-26 | 2010-04-08 | Toshiba Corp | 半導体装置 |
US8796694B2 (en) | 2008-09-26 | 2014-08-05 | Kabushiki Kaisha Toshiba | Semiconductor device |
JP2010212331A (ja) * | 2009-03-09 | 2010-09-24 | Nissan Motor Co Ltd | 半導体装置 |
JP2010219365A (ja) * | 2009-03-18 | 2010-09-30 | New Japan Radio Co Ltd | 半導体装置およびその製造方法 |
US9570560B2 (en) | 2009-05-12 | 2017-02-14 | Cree, Inc. | Diffused junction termination structures for silicon carbide devices |
JP5642191B2 (ja) * | 2010-11-08 | 2014-12-17 | 株式会社 日立パワーデバイス | 半導体装置 |
US8890169B2 (en) | 2010-11-08 | 2014-11-18 | Hitachi, Ltd. | Semiconductor device |
WO2012063310A1 (ja) * | 2010-11-08 | 2012-05-18 | 株式会社日立製作所 | 半導体装置 |
JP2014508411A (ja) * | 2011-02-10 | 2014-04-03 | クリー インコーポレイテッド | 保護リング延長部を含む接合部終端構造及びそれを組み込む電子デバイスの製作方法 |
US9385182B2 (en) | 2011-02-10 | 2016-07-05 | Cree, Inc. | Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same |
US8669561B2 (en) | 2011-03-10 | 2014-03-11 | Kabushiki Kaisha Toshiba | High-voltage semiconductor device |
JP2012190983A (ja) * | 2011-03-10 | 2012-10-04 | Toshiba Corp | 半導体装置 |
JP2019176165A (ja) * | 2011-05-18 | 2019-10-10 | ローム株式会社 | 半導体装置 |
JP2014530483A (ja) * | 2011-09-09 | 2014-11-17 | クリー インコーポレイテッドCree Inc. | 非注入障壁領域を含む半導体デバイス及びその製造方法 |
US11862672B2 (en) | 2012-03-12 | 2024-01-02 | Rohm Co., Ltd. | Semiconductor device, and method for manufacturing semiconductor device |
US20210313418A1 (en) * | 2012-03-12 | 2021-10-07 | Rohm Co., Ltd. | Semiconductor device, and method for manufacturing semiconductor device |
WO2013168795A1 (ja) * | 2012-05-11 | 2013-11-14 | ローム株式会社 | 半導体装置 |
US9337257B2 (en) | 2012-05-11 | 2016-05-10 | Rohm Co., Ltd. | Semiconductor device |
JP2014170866A (ja) * | 2013-03-05 | 2014-09-18 | Hitachi Power Semiconductor Device Ltd | 半導体装置 |
US9755014B2 (en) | 2013-03-05 | 2017-09-05 | Hitachi Power Semiconductor Device, Ltd. | Semiconductor device with substantially equal impurity concentration JTE regions in a vicinity of a junction depth |
WO2014136344A1 (ja) * | 2013-03-05 | 2014-09-12 | 株式会社日立パワーデバイス | 半導体装置 |
US9478605B2 (en) | 2013-03-05 | 2016-10-25 | Hitachi Power Semiconductor Device, Ltd. | Semiconductor device with similar impurity concentration JTE regions |
JP2015126192A (ja) * | 2013-12-27 | 2015-07-06 | 株式会社豊田中央研究所 | 縦型半導体装置 |
US10741686B2 (en) | 2015-09-14 | 2020-08-11 | Kabushiki Kaisha Toshiba | Method for manufacturing semiconductor device and semiconductor device |
JP2018190994A (ja) * | 2018-07-10 | 2018-11-29 | 株式会社東芝 | 半導体装置 |
CN111584623A (zh) * | 2020-06-02 | 2020-08-25 | 吉林华微电子股份有限公司 | 一种双极结型晶体管器件及其制造方法、电子产品 |
JP2022130748A (ja) * | 2021-03-18 | 2022-09-06 | ローム株式会社 | 半導体装置の製造方法 |
JP2022130747A (ja) * | 2021-03-18 | 2022-09-06 | ローム株式会社 | 半導体装置 |
JP7194855B2 (ja) | 2021-03-18 | 2022-12-22 | ローム株式会社 | 半導体装置 |
JP7194856B2 (ja) | 2021-03-18 | 2022-12-22 | ローム株式会社 | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US7649213B2 (en) | 2010-01-19 |
US20060065899A1 (en) | 2006-03-30 |
JP3914226B2 (ja) | 2007-05-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3914226B2 (ja) | 高耐圧半導体装置 | |
JP4921880B2 (ja) | 高耐圧半導体装置 | |
US7126169B2 (en) | Semiconductor element | |
JP7087280B2 (ja) | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 | |
JP5072991B2 (ja) | 半導体装置 | |
WO2016104264A1 (ja) | 半導体装置 | |
US8841741B2 (en) | High breakdown voltage semiconductor rectifier | |
US10096703B2 (en) | Semiconductor device and method of manufacturing semiconductor device | |
JP2002203967A (ja) | 半導体素子 | |
JP7030665B2 (ja) | 半導体装置 | |
JP6067133B2 (ja) | 炭化珪素半導体装置 | |
JP2020017641A (ja) | 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 | |
JP4844125B2 (ja) | 半導体装置およびその製造方法 | |
JP4948784B2 (ja) | 半導体装置及びその製造方法 | |
JP5682102B2 (ja) | 逆耐圧を有する縦型窒化ガリウム半導体装置 | |
JP5621198B2 (ja) | 半導体装置 | |
JP6862782B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP2017112193A (ja) | 半導体装置および半導体装置の製造方法 | |
JP2007027440A (ja) | 半導体装置 | |
JP2008226997A (ja) | 半導体装置およびその製造方法 | |
JP7074173B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP6651801B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP6737379B2 (ja) | 半導体装置 | |
US9698220B2 (en) | Semiconductor device | |
WO2019077878A1 (ja) | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20060823 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060905 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20061106 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070130 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070201 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100209 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110209 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120209 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120209 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130209 Year of fee payment: 6 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140209 Year of fee payment: 7 |
|
LAPS | Cancellation because of no payment of annual fees |