JP5072991B2 - 半導体装置 - Google Patents
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- JP5072991B2 JP5072991B2 JP2010052597A JP2010052597A JP5072991B2 JP 5072991 B2 JP5072991 B2 JP 5072991B2 JP 2010052597 A JP2010052597 A JP 2010052597A JP 2010052597 A JP2010052597 A JP 2010052597A JP 5072991 B2 JP5072991 B2 JP 5072991B2
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- 239000004065 semiconductor Substances 0.000 title claims description 242
- 230000015556 catabolic process Effects 0.000 claims description 66
- 239000012535 impurity Substances 0.000 claims description 62
- 230000005684 electric field Effects 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 44
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 37
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 36
- 230000004888 barrier function Effects 0.000 claims description 9
- 230000007423 decrease Effects 0.000 claims description 9
- 230000000694 effects Effects 0.000 description 12
- 238000004088 simulation Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000012935 Averaging Methods 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 108091006146 Channels Proteins 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Ec2=2.19×106(Nd/1016)0.1[V/cm]・・・(2)
耐圧の異方性により、A軸方向では耐圧がC軸の理想耐圧より1割以上低下することが分かる。
本実施の形態の半導体装置は、基板表面の法線ベクトルと<0001>方向または<000−1>方向とのなす角度が0度以上8度以下の炭化珪素からなる半導体基板と、半導体基板上に形成される炭化珪素からなる第1導電型の半導体層と、半導体層の表面に形成される活性領域と、活性領域を取り囲むように、半導体層の表面に形成される第2導電型の第1の半導体領域と、半導体層の表面に第1の半導体領域の外側に接し、第1の半導体領域を取り囲んで設けられ、第1の半導体領域と同一の不純物濃度および同一の深さを有する第2導電型の不純物領域がメッシュ形状に形成される第2の半導体領域と、活性領域上に設けられる第1の電極と、半導体基板の裏面に設けられる第2の電極を備える。そして、炭化珪素の誘電率をε、炭化珪素の<0001>方向(または<000−1>方向)、<11−20>方向の破壊電界強度をそれぞれEc1、Ec2、電荷素量をqとするとき、第1の半導体領域の不純物濃度の深さ方向の積分値が0.8εEc1/q以上1.2εEc1/q以下であり、不純物領域の不純物濃度の深さ方向の積分値を第2の半導体領域内で平均化した値が0.4εEc2/q以上1.1εEc2/q以下である。
本実施の形態の半導体装置は、第2の半導体領域に占める不純物領域の割合が第2の半導体領域の内側から外側に向けて減少すること以外は、第1の実施の形態と同様である。したがって、第1の実施の形態と重複する内容については記載を省略する。
本実施の形態の半導体装置は、pnダイオードである点で第1の実施の形態と異なっている。第1の実施の形態と重複する内容については記載を省略する。
本実施の形態の半導体装置は、MISFETである点で第1の実施の形態と異なっている。第1の実施の形態と重複する内容については記載を省略する。
12 n−型SiC半導体層
14 第1の半導体領域
16 ショットキ−電極
18 活性領域
20 第2の半導体領域
20a p−型の不純物領域
20b n−型の不純物領域
26 第1の電極
30 第2の電極
34 JTE
Claims (9)
- 基板表面の法線ベクトルと<0001>方向または<000−1>方向とのなす角度が0度以上8度以下の炭化珪素からなる半導体基板と、
前記半導体基板上に形成され、表面の法線ベクトルと<0001>方向または<000−1>方向とのなす角度が0度以上8度以下の炭化珪素からなる第1導電型の半導体層と、
前記半導体層の表面に形成される活性領域と、
前記活性領域を取り囲むように、前記半導体層の表面に形成される第2導電型の第1の半導体領域と、
前記半導体層の表面に前記第1の半導体領域の外側に接し、前記第1の半導体領域を取り囲んで設けられ、前記第1の半導体領域と同一の不純物濃度および同一の深さを有する第2導電型の不純物領域がメッシュ形状に形成される第2の半導体領域と、
前記活性領域上に設けられる第1の電極と、
前記半導体基板の裏面に設けられる第2の電極を備え、
前記炭化珪素の誘電率をε、前記炭化珪素の<0001>方向、<11−20>方向の破壊電界強度をそれぞれEc1、Ec2、電荷素量をqとするとき、前記第1の半導体領域の不純物濃度の深さ方向の積分値が0.8εEc1/q以上1.2εEc1/q以下であり、
前記不純物領域の不純物濃度の深さ方向の積分値を前記第2の半導体領域内で平均化した値が0.4εEc2/q以上1.1εEc2/q以下であり、
前記半導体層がn型であり、前記半導体層のドナー濃度をNdとするとき、前記第1の半導体領域の幅と、前記第2の半導体領域の幅との総和が、εEc 1 /qNd以上であることを特徴とする半導体装置。 - 前記第2の半導体領域の幅が、εEc2/qNd以上であることを特徴とする請求項1記載の半導体装置。
- 前記不純物領域同士の間隔が、2×εEc2/qNd以下であることを特徴とする請求項1または請求項2記載の半導体装置。
- 前記第2の半導体領域に占める前記不純物領域の割合が第2の半導体領域の内側から外側に向けて減少することを特徴とする請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記第1の半導体領域が、前記第1の電極と接続していることを特徴とする請求項1ないし請求項4いずれか一項記載の半導体装置。
- 前記半導体基板は第1導電型であり、前記第1の電極は、前記半導体層とショットキー接触をなし、前記活性領域にショットキーバリアダイオード構造が形成されていることを特徴とする請求項1ないし請求項4いずれか一項記載の半導体装置。
- 前記活性領域の上面に、第2導電型の第3の半導体領域をさらに具備し、前記半導体基板は第1導電型であり、前記活性領域にpnダイオード構造が形成されていることを特徴とする請求項1ないし請求項4いずれか一項記載の半導体装置。
- 前記半導体基板は第1導電型であり、前記活性領域にMISFET構造が形成されていることを特徴とする請求項1ないし請求項4いずれか一項記載の半導体装置。
- 前記半導体基板は第2導電型であり、前記活性領域にIGBT構造が形成されていることを特徴とする請求項1ないし請求項4いずれか一項記載の半導体装置。
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JP2012190983A (ja) * | 2011-03-10 | 2012-10-04 | Toshiba Corp | 半導体装置 |
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JP5861081B2 (ja) * | 2010-06-03 | 2016-02-16 | パナソニックIpマネジメント株式会社 | 半導体装置およびこれを用いた半導体リレー |
JP2013105868A (ja) | 2011-11-14 | 2013-05-30 | Sumitomo Electric Ind Ltd | ショットキーバリアダイオードの製造方法 |
US9406762B2 (en) * | 2012-05-17 | 2016-08-02 | General Electric Company | Semiconductor device with junction termination extension |
US8766396B2 (en) * | 2012-11-02 | 2014-07-01 | Moxtek, Inc. | Vibration noise shield in a semiconductor sensor |
US9425265B2 (en) * | 2013-08-16 | 2016-08-23 | Cree, Inc. | Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure |
JP6242633B2 (ja) * | 2013-09-03 | 2017-12-06 | 株式会社東芝 | 半導体装置 |
WO2015145593A1 (ja) * | 2014-03-26 | 2015-10-01 | 株式会社日立製作所 | 半導体装置及びその製造方法,パワーモジュール,電力変換装置,3相モータシステム,自動車並びに鉄道車両 |
WO2016043247A1 (ja) * | 2014-09-17 | 2016-03-24 | 富士電機株式会社 | 半導体装置 |
JP6323570B2 (ja) | 2014-12-25 | 2018-05-16 | 富士電機株式会社 | 半導体装置 |
JP6363540B2 (ja) | 2015-03-16 | 2018-07-25 | 株式会社東芝 | 半導体装置 |
EP3975266A1 (en) * | 2020-09-28 | 2022-03-30 | Nexperia B.V. | Semiconductor device with improved junction termination extension region |
US20240170568A1 (en) * | 2022-11-22 | 2024-05-23 | Stmicroelectronics S.R.L. | Silicon carbide integrated device and method for manufacturing an integrated device |
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JPH04363068A (ja) * | 1990-09-19 | 1992-12-15 | Nec Corp | 半導体装置 |
US6002159A (en) | 1996-07-16 | 1999-12-14 | Abb Research Ltd. | SiC semiconductor device comprising a pn junction with a voltage absorbing edge |
JP3914226B2 (ja) * | 2004-09-29 | 2007-05-16 | 株式会社東芝 | 高耐圧半導体装置 |
JP4189415B2 (ja) * | 2006-06-30 | 2008-12-03 | 株式会社東芝 | 半導体装置 |
JP4921880B2 (ja) * | 2006-07-28 | 2012-04-25 | 株式会社東芝 | 高耐圧半導体装置 |
JP2009158519A (ja) * | 2007-12-25 | 2009-07-16 | Toyota Motor Corp | 半導体装置及びその製造方法 |
-
2010
- 2010-03-10 JP JP2010052597A patent/JP5072991B2/ja not_active Expired - Fee Related
- 2010-09-07 US US12/876,713 patent/US8362586B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012190983A (ja) * | 2011-03-10 | 2012-10-04 | Toshiba Corp | 半導体装置 |
US8669561B2 (en) | 2011-03-10 | 2014-03-11 | Kabushiki Kaisha Toshiba | High-voltage semiconductor device |
Also Published As
Publication number | Publication date |
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US20110220913A1 (en) | 2011-09-15 |
US8362586B2 (en) | 2013-01-29 |
JP2011187767A (ja) | 2011-09-22 |
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