JP2012190983A - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 285
- 239000012535 impurity Substances 0.000 claims abstract description 72
- 230000015556 catabolic process Effects 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 51
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 41
- 230000005684 electric field Effects 0.000 claims description 56
- 230000004888 barrier function Effects 0.000 claims description 9
- 230000007423 decrease Effects 0.000 claims description 8
- 238000012935 Averaging Methods 0.000 claims description 4
- 238000006731 degradation reaction Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 11
- 238000004088 simulation Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
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- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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Abstract
【課題】耐圧劣化を防止するとともに低コストで製造可能な構造を備える半導体装置を提供する。
【解決手段】半導体基板と、基板上に形成される炭化珪素からなる第1導電型の半導体層と、半導体層の表面に形成される活性領域と、活性領域を取り囲むように、半導体層の表面に形成される第2導電型の第1の半導体領域と、半導体層の表面に第1の半導体領域の外側に接し、第1の半導体領域を取り囲んで設けられ、第1の半導体領域と同一の不純物濃度および同一の深さを有する第2導電型の不純物領域がメッシュ形状に形成される第2の半導体領域と、活性領域上に設けられる第1の電極と、半導体基板の裏面に設けられる第2の電極を備えることを特徴とする半導体装置である。
【選択図】図1
Description
Ec2=2.19×106(Nd/1016)0.1[V/cm]・・・(2)
破壊電界強度の異方性により、A軸方向では破壊電界強度がC軸の破壊電界強度より1割以上低下する。これは耐圧に換算すると3割以上の低下に相当する。
本実施の形態の半導体装置は、基板表面の法線ベクトルと<0001>方向または<000−1>方向とのなす角度が0度以上8度以下の炭化珪素からなる半導体基板と、半導体基板上に形成される炭化珪素からなる第1導電型の半導体層と、半導体層の表面に形成される活性領域と、活性領域を取り囲むように、半導体層の表面に形成される第2導電型の第1の半導体領域と、半導体層の表面に第1の半導体領域の外側に接し、第1の半導体領域を取り囲んで設けられ、第1の半導体領域と同一の不純物濃度および同一の深さを有する第2導電型の不純物領域がメッシュ形状に形成される第2の半導体領域と、活性領域上に設けられる第1の電極と、半導体基板の裏面に設けられる第2の電極を備える。そして、炭化珪素の比誘電率をε、炭化珪素の<0001>方向(または<000−1>方向)、<11−20>方向の破壊電界強度をそれぞれEc1、Ec2、電荷素量をqとするとき、第1の半導体領域の不純物濃度の深さ方向の積分値が0.8εEc1/q以上1.2εEc1/q以下であり、不純物領域の不純物濃度の深さ方向の積分値を第2の半導体領域内で平均化した値が0.4εEc2/q以上1.1εEc2/q以下である。
第3の半導体領域は、第1の半導体領域と第2の半導体領域の周辺に形成され、不純物濃度の深さ方向の積分値が0.4εEc2/q以上1.1εEc2/q以下である。
さらに第3の半導体領域が、第1の半導体領域と第2の半導体領域の周辺に形成され、不純物濃度の深さ方向の積分値が0.4εEc2/q以上1.1εEc2/q以下である。
第3の半導体領域は自己整合プロセスで形成する。この構成により、第1の半導体領域と、第2の半導体領域、及び第3の半導体領域を同一のマスクプロセスで形成することが可能となる。したがって、低コストで製造可能である。
Ec2’=2.14×1015(Nd/1016)0.1[V/cm]・・・(4)
即ち(1)式と(3)式の違い、および(2)式と(4)式の違いは1%に満たない。したがって、オフ角が8度であってもオフ角が0度の場合と同一視できる。
この効果により横方向電界を緩和しているので、JTEの外側部分の第2の半導体領域は設計耐圧に達する以前の電圧で空乏化する。これにより第1の半導体領域の外周部に印加される基板表面に平行な電界成分を緩和する。
12 n−型SiC半導体層
14 第1の半導体領域
16 ショットキー電極
18 活性領域
20 第2の半導体領域
20a p−型の不純物領域
20b n−型の不純物領域
26 第1の電極
30 第2の電極
34 JTE
36 第3の半導体領域
Claims (10)
- 基板表面の法線ベクトルと<0001>方向または<000−1>方向とのなす角度が0度以上8度以下の炭化珪素からなる半導体基板と、
前記半導体基板上に形成される炭化珪素からなる第1導電型の半導体層と、
前記半導体層の表面に形成される活性領域と、
前記活性領域を取り囲むように、前記半導体層の表面に形成される第2導電型の第1の半導体領域と、
前記半導体層の表面に前記第1の半導体領域の外側に接し、前記第1の半導体領域を取り囲んで設けられ、前記第1の半導体領域と同一の不純物濃度および同一の深さを有する第2導電型の不純物領域がメッシュ形状に形成される第2の半導体領域と、
、前記第1の半導体領域と前記第2の半導体領域の周辺に形成された第2導電型の第3の半導体領域と
前記活性領域上に設けられる第1の電極と、
前記半導体基板の裏面に設けられる第2の電極を備え、
前記炭化珪素の比誘電率をε、前記炭化珪素の<0001>方向、<11−20>方向の破壊電界強度をそれぞれEc1、Ec2、電荷素量をqとするとき、前記第1の半導体領域の不純物濃度の深さ方向の積分値が0.8εEc1/q以上1.2εEc1/q以下であり、
前記不純物領域の不純物濃度の深さ方向の積分値を前記第2の半導体領域内で平均化した値が0.4εEc2/q以上1.1εEc2/q以下であることを特徴とし、
第3の半導体領域は、第1の半導体領域と第2の半導体領域の周辺に形成され、不純物濃度の深さ方向の積分値が0.4εEc2/q以上1.1εEc2/q以下であることを特徴とする半導体装置。 - 前記半導体層がn型であり、前記半導体層のドナー濃度をNdとするとき、前記第1の半導体領域の幅と、前記第2の半導体領域の幅との総和が、εEc1/qNd以上であることを特徴とする請求項1記載の半導体装置。
- 前記第2の半導体領域の幅が、εEc2/qNd以上であることを特徴とする請求項1または請求項2記載の半導体装置。
- 前記不純物領域の間隔が、2×εEc2/qNd以下であることを特徴とする請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記第2の半導体領域に占める前記不純物領域の割合が第2の半導体領域の内側から外側に向けて減少することを特徴とする請求項1ないし請求項4いずれか1項記載の半導体装置。
- 前記第1の半導体領域が、前記第1の電極と接続していることを特徴とする請求項1ないし請求項5いずれか1項記載の半導体装置。
- 前記半導体基板は第1導電型であり、前記第1の電極は、前記半導体層とショットキー接触をなし、前記活性領域にショットキーバリアダイオード構造が形成されていることを特徴とする請求項1ないし請求項5いずれか1項記載の半導体装置。
- 前記活性領域の上面に、第2導電型の第3の半導体領域をさらに具備し、前記半導体基板は第1導電型であり、前記活性領域にpnダイオード構造が形成されていることを特徴とする請求項1ないし請求項5いずれか1項記載の半導体装置。
- 前記半導体基板は第1導電型であり、前記活性領域にMISFET構造が形成されていることを特徴とする請求項1ないし請求項5いずれか1項記載の半導体装置。
- 前記半導体基板は第2導電型であり、前記活性領域にIGBT構造が形成されていることを特徴とする請求項1ないし請求項5いずれか1項記載の半導体装置。
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WO2014188794A1 (ja) * | 2013-05-21 | 2014-11-27 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
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WO2014136344A1 (ja) * | 2013-03-05 | 2014-09-12 | 株式会社日立パワーデバイス | 半導体装置 |
JP2014170866A (ja) * | 2013-03-05 | 2014-09-18 | Hitachi Power Semiconductor Device Ltd | 半導体装置 |
US9478605B2 (en) | 2013-03-05 | 2016-10-25 | Hitachi Power Semiconductor Device, Ltd. | Semiconductor device with similar impurity concentration JTE regions |
US9755014B2 (en) | 2013-03-05 | 2017-09-05 | Hitachi Power Semiconductor Device, Ltd. | Semiconductor device with substantially equal impurity concentration JTE regions in a vicinity of a junction depth |
WO2014188794A1 (ja) * | 2013-05-21 | 2014-11-27 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
JP2014229697A (ja) * | 2013-05-21 | 2014-12-08 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
US9559217B2 (en) | 2013-05-21 | 2017-01-31 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device |
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JP5558393B2 (ja) | 2014-07-23 |
US20120228633A1 (en) | 2012-09-13 |
US8669561B2 (en) | 2014-03-11 |
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