JP2014229697A - 炭化珪素半導体装置 - Google Patents
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 129
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 128
- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 238000006243 chemical reaction Methods 0.000 claims abstract description 70
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000010936 titanium Substances 0.000 claims description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 230000015556 catabolic process Effects 0.000 abstract description 37
- 230000032683 aging Effects 0.000 abstract description 5
- 238000006731 degradation reaction Methods 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 4
- 208000000541 Johanson-Blizzard syndrome Diseases 0.000 description 45
- 239000012535 impurity Substances 0.000 description 22
- 230000005684 electric field Effects 0.000 description 16
- 239000000758 substrate Substances 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】炭化珪素半導体装置1は、炭化珪素層10と、絶縁層20と、ショットキー電極50と、反応領域2とを備える。炭化珪素層10は、第1の主面10aに接するp型領域3と、p型領域3および第1の主面10aに接するn型領域14とを含む。絶縁層20は、第3の主面20aと、第4の主面20bと、第3の主面20aと第4の主面20bとを連接する側壁面20cとを有し、かつ第4の主面20bにおいて第1の主面10aと接する。ショットキー電極50は、第1の主面10aと、側壁面20cとに接する。反応領域2は、絶縁層20、ショットキー電極50およびp型領域3に接する。反応領域2は、ショットキー電極50を構成する元素と、絶縁層20を構成する元素と、珪素と、炭素とを含む。
【選択図】図1
Description
発明者らは、炭化珪素半導体装置の耐圧の経年劣化を抑制する方法について鋭意研究の結果、以下の知見を得て本発明を見出した。たとえばSBDなどの炭化珪素半導体装置に、たとえばサージ電圧などの高電圧が印加された場合、ショットキー電極と絶縁層と炭化珪素層とが接触する領域に高電界が印加される。当該領域に高電界が印加されると、物理的な破壊を伴うハードブレークダウンが引き起される場合がある。また物理的な破壊を伴わなくとも、絶縁層の絶縁性が時間の経過とともに劣化する場合がある。絶縁膜の絶縁性が劣化すると、リーク電流の変化(増大)を引き起こす場合があるため、炭化珪素半導体装置の耐圧が時間の経過ととともに劣化する。言い換えれば、炭化珪素半導体素子の耐圧信頼性が損なわれることになる。
まず、本発明の実施の形態1に係る炭化珪素ダイオードであるJBSの構造について、図1〜図4を参照して説明する。
本実施の形態に係るJBS1は、絶縁層20、ショットキー電極50およびp型領域3に接する反応領域2を有し、反応領域2は、ショットキー電極50を構成する元素と、絶縁層20を構成する元素と、珪素と、炭素とを含む。これにより、絶縁層20と、ショットキー電極50と、炭化珪素層10のp型領域3とが接触する反応領域2に電界が集中することを緩和することができる。それゆえ、絶縁層20の絶縁性が経年劣化することを抑制することができる。結果として、JBS1の耐圧が経年劣化することを抑制することができる。また瞬時に高電圧が印加される場合においても、反応領域2が電流経路として機能するため、安定したブレークダウン現象を得ることができる。さらに、炭化珪素層10に反応領域2と接するp型領域3を設けることで高い耐圧を得ることができる。
まず第1の例、第2の例および第3の例のJBSを準備した。第1の例のJBSは、実施の形態で説明した構造と同様の構造を有するJBSである。つまり第1の例のJBSは、第1のp型領域3と、ガードリング領域16bと、反応領域2とを有し、絶縁層20の側壁面20cと炭化珪素層10の第1の主面10aとにより形成される角度θは40°である。第2の例のJBSは、第1のp型領域3およびガードリング領域16bを有していない点において第1の例のJBSと異なっており、他の点においては第1のJBSと同様である。第3の例のJBSは、第1のp型領域3およびガードリング領域16bを有しておらず、絶縁層20の側壁面20cと炭化珪素層10の第1の主面10aとにより形成される角度θは15°である点において第1の例のJBSと異なっており、他の点においては第1のJBSと同様である。
Claims (8)
- 第1の主面と、前記第1の主面と反対側の第2の主面とを有し、前記第1の主面に接するp型領域と、前記p型領域および前記第1の主面に接するn型領域とを含む炭化珪素層と、
第3の主面と、前記第3の主面と反対の第4の主面と、前記第3の主面と前記第4の主面とを連接する側壁面とを有し、かつ前記第4の主面において前記第1の主面と接する絶縁層と、
前記第1の主面と、前記側壁面とに接するショットキー電極と、
前記絶縁層、前記ショットキー電極および前記p型領域に接する反応領域とを備え、
前記反応領域は、前記ショットキー電極を構成する元素と、前記絶縁層を構成する元素と、珪素と、炭素とを含む、炭化珪素半導体装置。 - 前記絶縁層の前記側壁面は、前記炭化珪素層の前記第1の主面に対して傾斜している、請求項1に記載の炭化珪素半導体装置。
- 前記側壁面と前記第1の主面とがなす角度は10°以上60°以下である、請求項2に記載の炭化珪素半導体装置。
- 前記炭化珪素層の前記p型領域と前記反応領域との接触抵抗は、0.1Ωcm2以下である、請求項1〜3のいずれか1項に記載の炭化珪素半導体装置。
- 平面視において、前記p型領域は、内側端部と、前記内側端部と反対側の外側端部とを含み、
平面視において、前記反応領域は、前記内側端部と前記外側端部との間に位置している、請求項1〜4のいずれか1項に記載の炭化珪素半導体装置。 - 平面視において、前記p型領域を囲むように配置されたガードリング領域をさらに備えた、請求項1〜5のいずれか1項に記載の炭化珪素半導体装置。
- 前記絶縁層は、二酸化珪素を含む、請求項1〜6のいずれか1項に記載の炭化珪素半導体装置。
- 前記ショットキー電極は、チタン、モリブデン、ニッケル、金およびタングステンからなる群より選択される少なくとも一つの元素を含む、請求項1〜7のいずれか1項に記載の炭化珪素半導体装置。
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JP2013107133A JP6028676B2 (ja) | 2013-05-21 | 2013-05-21 | 炭化珪素半導体装置 |
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WO2017149743A1 (ja) * | 2016-03-04 | 2017-09-08 | 新電元工業株式会社 | ワイドギャップ型半導体装置 |
JP2020036047A (ja) * | 2019-12-06 | 2020-03-05 | ローム株式会社 | SiC半導体装置 |
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JP2008251772A (ja) * | 2007-03-30 | 2008-10-16 | Toshiba Corp | 半導体装置 |
JP2010068008A (ja) * | 2009-12-24 | 2010-03-25 | Mitsubishi Electric Corp | 炭化珪素ショットキバリアダイオードの製造方法 |
JP2012069567A (ja) * | 2010-09-21 | 2012-04-05 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
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JP2016208016A (ja) * | 2015-04-15 | 2016-12-08 | パナソニックIpマネジメント株式会社 | 半導体素子およびその製造方法 |
WO2017149743A1 (ja) * | 2016-03-04 | 2017-09-08 | 新電元工業株式会社 | ワイドギャップ型半導体装置 |
JP6200107B1 (ja) * | 2016-03-04 | 2017-09-20 | 新電元工業株式会社 | ワイドギャップ型半導体装置 |
JP2020036047A (ja) * | 2019-12-06 | 2020-03-05 | ローム株式会社 | SiC半導体装置 |
JP7168544B2 (ja) | 2019-12-06 | 2022-11-09 | ローム株式会社 | SiC半導体装置 |
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