JP2012182405A - 半導体整流装置 - Google Patents
半導体整流装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 223
- 239000012535 impurity Substances 0.000 claims abstract description 134
- 239000000758 substrate Substances 0.000 claims abstract description 65
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 73
- 239000000969 carrier Substances 0.000 abstract description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 73
- 230000004048 modification Effects 0.000 description 37
- 238000012986 modification Methods 0.000 description 37
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- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 238000001459 lithography Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000020169 heat generation Effects 0.000 description 4
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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Abstract
【解決手段】ワイドギャップ半導体の第1導電型の半導体基板と、半導体基板の上面に形成され、半導体基板より低不純物濃度のワイドギャップ半導体の第1導電型の半導体層と、半導体層表面に形成されるワイドギャップ半導体の第1導電型の第1の半導体領域と、第1の半導体領域の周囲に形成されるワイドギャップ半導体の第2導電型の第2の半導体領域と、第1の半導体領域に挟まれ、接合深さが第2の半導体領域の接合深さよりも深いワイドギャップ半導体の第2導電型の第3の半導体領域と、第1、第2および第3の半導体領域上に形成される第1の電極と、半導体基板の下面に形成される第2の電極と、を備えることを特徴とする半導体整流装置。
【選択図】図1
Description
本実施の形態の半導体整流装置は、ワイドギャップ半導体の第1導電型の半導体基板と、半導体基板の上面(一方の面)に形成され、半導体基板より低不純物濃度のワイドギャップ半導体の第1導電型の半導体層と、半導体層表面に形成されるワイドギャップ半導体の第1導電型の第1の半導体領域と、第1の半導体領域の周囲に形成されるワイドギャップ半導体の第2導電型の第2の半導体領域と、第1の半導体領域に挟まれ、接合深さが第2の半導体領域の接合深さよりも深いワイドギャップ半導体の第2導電型の第3の半導体領域と、第1、第2および第3の半導体領域上に形成される第1の電極と、半導体基板の下面(他方の面)に形成される第2の電極と、を備える。
図9は、本実施の形態の第1の変形例の半導体整流装置の模式的な断面図である。p型不純物領域20がSiC基板12と接していない、すなわち、p型不純物領域20の深さDpが、n−型SiC層14の厚さDdriftよりも浅いこと以外は第1の実施の形態と同様である。
図10は、本実施の形態の第2の変形例の半導体整流装置の模式的な断面図である。p型不純物領域20が、SiC基板12内にまでおよんで形成されること以外は第1の実施の形態と同様である。
図11は、本実施の形態の第3の変形例の半導体整流装置の模式的な上面図である。p型不純物領域20が1個ではなく、9個と複数個形成されること以外は第1の実施の形態と同様である。
図12は、本実施の形態の第4の変形例の半導体整流装置の模式的な上面図である。p型不純物領域20が正方形ではなく、長方形であること以外は第1の実施の形態と同様である。
図13は、本実施の形態の第5の変形例の半導体整流装置の模式的な上面図である。p型不純物領域20が1個ではなく、3個と複数個形成されること以外は第1の実施の形態の第4の変形例と同様である。
本実施の形態の半導体整流装置は、第3の半導体領域の不純物濃度が、半導体基板側に比べ第1の電極側で高くなっていること以外は第1の実施の形態と同様である。したがって、第1の実施の形態と重複する内容については記載を省略する。
本実施の形態の半導体整流装置は、第3の半導体領域に挟まれる絶縁層を、さらに備えること以外は第1の実施の形態と同様である。したがって、第1の実施の形態と重複する内容については記載を省略する。
同様である。その後、トレンチの内側面に斜めイオン注入により、AlまたはBを導入する。その後、1500℃〜2000℃の活性化アニールを行う。このようにして、p型不純物領域20を形成する(図18)。
図20は、本実施の形態の第1の変形例の半導体整流装置の模式的な断面図である。p型不純物領域20がSiC基板12と接していない、すなわち、p型不純物領域20の深さDpが、n−型SiC層14の厚さDdriftよりも浅いこと以外は第3の実施の形態と同様である。
図21は、本実施の形態の第2の変形例の半導体整流装置の模式的な断面図である。絶縁層30がSiC基板12内にまで形成されること以外は第3の実施の形態と同様である。
本変形例の半導体整流装置は、p型不純物領域(第3の半導体領域)20の不純物濃度が、SiC基板(半導体基板)12側に比べ第1の電極側で高くなっていること以外は第3の実施の形態と同様である。
本実施の形態の半導体整流装置は、第3の半導体領域の断面における幅が、第1の電極側から半導体基板側に向けて狭くなること以外は第1の実施の形態と同様である。したがって、第1の実施の形態と重複する内容については記載を省略する。
図24は、本実施の形態の変形例の半導体整流装置の模式的な断面図である。p型不純物領域20が、第1の電極24側からSiC基板(半導体基板)12側に向けて、連続的にではなく段階的に狭くなっている狭くなっていること以外は第4の実施の形態と同様である。
12 SiC基板(半導体基板)
14 n−型SiC層(半導体層)
16 n型不純物領域(第1の半導体領域)
18 リサーフ領域(第2の半導体領域)
20 p型不純物領域(第3の半導体領域)
22 絶縁膜
24 第1の電極
26 第2の電極
30 絶縁層
Claims (9)
- ワイドギャップ半導体の第1導電型の半導体基板と、
前記半導体基板の上面に形成され、前記半導体基板より低不純物濃度のワイドギャップ半導体の第1導電型の半導体層と、
前記半導体層表面に形成されるワイドギャップ半導体の第1導電型の第1の半導体領域と、
前記第1の半導体領域の周囲に形成されるワイドギャップ半導体の第2導電型の第2の半導体領域と、
前記第1の半導体領域に挟まれ、接合深さが前記第2の半導体領域の接合深さよりも深いワイドギャップ半導体の第2導電型の第3の半導体領域と、
前記第1、第2および第3の半導体領域上に形成される第1の電極と、
前記半導体基板の下面に形成される第2の電極と、
を備えることを特徴とする半導体整流装置。 - 前記第3の半導体領域の接合深さが、前記半導体層の厚さの半分以上であることを特徴とする請求項1記載の半導体整流装置。
- 前記第3の半導体領域の不純物濃度が、前記半導体基板の不純物濃度より低く、前記半導体層よりも高いことを特徴とする請求項1または請求項2記載の半導体整流装置。
- 前記第3の半導体領域が前記半導体基板と接することを特徴とする請求項1ないし請求項3いずれか一項記載の半導体整流装置。
- 前記第3の半導体領域の不純物濃度が、前記半導体基板側に比べ前記第1の電極側で高くなっていることを特徴とする請求項1ないし請求項4いずれか一項記載の半導体整流装置。
- 前記第3の半導体領域に挟まれる絶縁層を、さらに備えることを特徴とする請求項1ないし請求項5いずれか一項記載の半導体整流装置。
- 前記第3の半導体領域の幅が、前記第1の電極側から前記半導体基板側に向けて狭くなることを特徴とする請求項1ないし請求項6いずれか一項記載の半導体整流装置。
- 前記第1の電極と前記第1の半導体領域とはショットキー接合しており、
前記第1の電極と前記第3の半導体領域とはオーミック接合していることを特徴とする請求項1ないし請求項7いずれか一項記載の半導体整流装置。 - 前記ワイドバンドギャップ半導体が炭化珪素(SiC)であることを特徴とする請求項1ないし請求項8いずれか一項記載の半導体整流装置。
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Cited By (3)
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WO2014188794A1 (ja) * | 2013-05-21 | 2014-11-27 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
JP2018032794A (ja) * | 2016-08-25 | 2018-03-01 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
JPWO2017119066A1 (ja) * | 2016-01-05 | 2018-04-19 | 三菱電機株式会社 | 炭化珪素半導体装置 |
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KR101846879B1 (ko) * | 2016-07-05 | 2018-04-09 | 현대자동차 주식회사 | 쇼트키 배리어 다이오드 및 그 제조 방법 |
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US20120223332A1 (en) | 2012-09-06 |
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