JP2008282973A - ジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置 - Google Patents
ジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 53
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 53
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 53
- 230000004888 barrier function Effects 0.000 title claims description 16
- 239000010410 layer Substances 0.000 claims description 190
- 230000002093 peripheral effect Effects 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 239000002344 surface layer Substances 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 16
- 230000015556 catabolic process Effects 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
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Abstract
【解決手段】ショットキー電極4のうちn-型ドリフト層2と接触する領域において、複数のp型層8を配置し、この複数のp型層8が終端構造を構成するp型リサーフ層6やp型ガードリング層7よりも深くなるようにする。これにより、p型層8の下方位置全面において電界集中を受けることになり、PNダイオード部に全体でほぼ均等にサージ電流を流せるようにできるため、高いサージ耐圧を得ることが可能となる。
【選択図】図1
Description
本発明の第1実施形態について説明する。図1に、本実施形態にかかるJBSを備えたSiC半導体装置の断面図を示す。また、図2に、図1に示すSiC半導体装置の上面レイアウト図を示す。図1は、図2のA−A断面に相当する断面図である。以下、これらを参照して、本実施形態のSiC半導体装置について説明する。
本発明の第2実施形態について説明する。図5は、本実施形態にかかるJBSを備えたSiC半導体装置の断面図である。本実施形態は、p型層8の形状を第1実施形態に対して変更したものであり、その他に関しては、第1実施形態と同様である。
本発明の第3実施形態について説明する。図6は、本実施形態にかかるJBSを備えたSiC半導体装置の断面図である。本実施形態は、p型層8の形状を第1実施形態に対して変更したものであり、その他に関しては、第1実施形態と同様である。
本発明の第4実施形態について説明する。図7は、本実施形態にかかるJBSを備えたSiC半導体装置の断面図である。本実施形態は、p型層8の形状を第1実施形態に対して変更したものであり、その他に関しては、第1実施形態と同様である。
本発明の第5実施形態について説明する。図9は、本実施形態にかかるJBSを備えたSiC半導体装置の上面レイアウト図である。この図のB−B断面が図1、図5〜図7に相当する。本実施形態のSiC半導体装置は、第1〜第4実施形態に対してJBSおよび終端構造のレイアウト構成を変更したものであり、その他に関しては第1実施形態と同様であるため、異なる部分についてのみ説明する。
本発明の第6実施形態について説明する。図10は、本実施形態にかかるJBSを備えたSiC半導体装置の上面レイアウト図である。この図のC−C断面がほぼ図1、図5〜図7等と一致する。本実施形態のSiC半導体装置は、第1〜第4実施形態に対してJBSおよび終端構造のレイアウト構成を変更したものであり、その他に関しては第1実施形態と同様であるため、異なる部分についてのみ説明する。
上記各実施形態では、各図においてp型層8の数の一例を示したが、これに限るものではない。また、第5実施形態において、p型リサーフ層6の内側の端部の形状やp型層8の形状として、角の丸めた正方形を例に挙げて説明したが、その他の角を丸めた正多角形としても構わない。勿論、特許文献1に示されるようにp型層8がストライプ状に配置されるものにおいて、p型リサーフ層6よりも深くするような構造としても構わない。
Claims (9)
- 主表面(1a)および裏面(1b)を有し、第1導電型の炭化珪素からなる基板(1)と、
前記基板(1)の前記主表面(1a)上に形成され、前記基板(1)よりも低不純物濃度とされた第1導電型の炭化珪素からなるドリフト層(2)と、
前記ドリフト層(2)の上に配置され、該ドリフト層(2)におけるセル部に開口部(3a)が形成された絶縁膜(3)と、
前記セル部に形成され、前記絶縁膜(3)の開口部(3a)を通じて、前記ドリフト層(2)の表面とショットキー接触するように形成されたショットキー電極(4)と、前記基板(1)の裏面(1b)に形成されたオーミック電極(5)とを備えてなるショットキーバリアダイオード(10)と、
前記セル部の外周領域に形成され、前記ドリフト層(2)の表層部において、前記セル部を囲むように形成された第2導電型のリサーフ層(6)を含む終端構造と、
前記リサーフ層(6)の内側となる前記ショットキー電極(4)のうち前記ドリフト層(2)と接する領域の下方に、前記ドリフト層(2)の表面において前記ショットキー電極(4)と接続されるように形成され、かつ、互いに離間して配置された複数の第2導電型層(8)とを備え、
前記複数の第2導電型層(8)と前記ドリフト層(2)とによりPNダイオードが構成され、
前記複数の第2導電型層(8)が前記リサーフ層(6)よりも深く形成されていることを特徴とするジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置。 - 前記複数の第2導電型層(8)は、前記ショットキー電極(4)のうち前記ドリフト層(2)と接する領域の中央部に配置されたものの方が該中央部よりも外側に配置されたものよりも深く形成されていることを特徴とする請求項1に記載のジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置。
- 前記複数の第2導電型層(8)は、前記基板(1)の深さ方向に浅くなるほど前記基板(1)の平面方向の寸法が大きくなる形状とされていることを特徴とする請求項1に記載のジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置。
- 前記複数の第2導電型層(8)のうち最も前記リサーフ層(6)側に配置されたものは、滑らかに前記リサーフ層(6)の深さとなるように、前記ショットー電極(4)の外周方向に向かうに連れて深さが浅くされていることを特徴とする請求項1ないし3のいずれか1つに記載のジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置。
- 前記複数の第2導電型層(8)は、少なくとも前記ショットキー電極(4)のうち前記ドリフト層(2)と接する領域の中央部において、深さが均一とされていることを特徴とする請求項1ないし4のいずれか1つに記載のジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置。
- 前記複数の第2導電型層(8)は、前記ショットキー電極(4)のうち前記ドリフト層(2)と接する領域の中心に位置する中心部(8a)と、該中心部(8a)を中心として囲むように配置されていると共に該中心部(8a)を中心として点対称とされた複数の環状部(8b〜8e)とを有し、前記複数の環状部(8b〜8e)の最も前記中心部(8a)の外周側に配置されるものを外周部(8e)とすると、前記中心部(8a)を中心として径方向に切断した断面において、前記複数の環状部(8b〜8e)のうち前記中心部(8a)と前記外周部(8e)の間に位置する内周部(8b〜8d)が、前記中心部(8a)と前記外周部(8e)の間で対称となる形状とされていることを特徴とする請求項1ないし5のいずれか1つに記載のジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置。
- 前記複数の第2導電型層(8)は、前記中心部(8a)を中心とした同心円状に並べられていることを特徴とする請求項6に記載のジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置。
- 前記複数の第2導電型層(8)は、前記中心部(8a)が角を丸めた正多角形で構成されていると共に、前記環状部(8b〜8e)も前記中心部(8a)と同じ角を丸めた正多角形とされていることを特徴とする請求項6に記載のジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置。
- 前記外周部(8e)は前記リサーフ層(6)の内側の端部と接触もしくは前記リサーフ層(6)の内部に含まれることを特徴とする請求項6ないし8のいずれか1つに記載のジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置。
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US12/078,370 US7816733B2 (en) | 2007-05-10 | 2008-03-31 | SiC semiconductor having junction barrier schottky device |
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