JP6053103B2 - ワイドバンドギャップ半導体装置およびその製造方法 - Google Patents
ワイドバンドギャップ半導体装置およびその製造方法 Download PDFInfo
- Publication number
- JP6053103B2 JP6053103B2 JP2012091460A JP2012091460A JP6053103B2 JP 6053103 B2 JP6053103 B2 JP 6053103B2 JP 2012091460 A JP2012091460 A JP 2012091460A JP 2012091460 A JP2012091460 A JP 2012091460A JP 6053103 B2 JP6053103 B2 JP 6053103B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- conductivity type
- band gap
- wide band
- deposition film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 117
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 54
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 53
- 239000012535 impurity Substances 0.000 claims description 50
- 230000004888 barrier function Effects 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 33
- 238000001465 metallisation Methods 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 18
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 6
- 229910002601 GaN Inorganic materials 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 42
- 230000015556 catabolic process Effects 0.000 description 17
- 238000005468 ion implantation Methods 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 230000000694 effects Effects 0.000 description 12
- 230000005684 electric field Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000010936 titanium Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 230000000779 depleting effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0761—Vertical bipolar transistor in combination with diodes only
- H01L27/0766—Vertical bipolar transistor in combination with diodes only with Schottky diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0495—Schottky electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Description
図1は、本発明の第1実施形態にかかる炭化珪素JBSダイオードの断面構造図である。この炭化珪素JBSダイオードは、高濃度の窒素がドーピングされた厚さ300μmの(0001)面を主面とする第1導電型(n型)の高濃度の炭化珪素基板1主面(表面)上に、低濃度の窒素がドーピングされた第1導電型(n型)の炭化珪素エピタキシャル層(ワイドバンドギャップ半導体堆積膜)2が第1の領域として形成される。これら炭化珪素基板1と、炭化珪素エピタキシャル層2は、ワイドバンドギャップ半導体により形成される。
図3〜8は、本発明の第1実施形態にかかるJBS構造ダイオードの製造工程を示す断面構造図である。はじめに、図3に示すように、1×1018cm-3の窒素がドーピングされた厚さ300μmのエピタキシャル層のn型の炭化珪素基板1表面上に、1.8×1016cm-3の窒素がドーピングされた厚さ6μmの低濃度のn型の炭化珪素エピタキシャル層(n型ドリフト層)2を堆積する。
つぎに、本発明の第2実施形態について説明する。図10は、本発明の第2実施形態にかかる炭化珪素JBSダイオードの断面構造図である。この第2実施形態は、ジャンクションバリアショットキー(JBS)構造のためのp型半導体層からなる不純物領域4の形状の他の例であり、その他の構造に関しては、第1実施形態と同様である。このため、第1実施形態と同一箇所には同一符号を付してある。
2 第1導電型の炭化珪素エピタキシャル層(半導体堆積膜)
3 第2導電型の不純物領域
4 第2導電型の不純物領域
5 第2導電型の不純物領域
6 酸化膜
7 裏面電極(オーミック電極)
9 ショットキー電極(金属堆積膜)
10 電極パッド
11 絶縁層
LB ボトム幅
LU トップ幅
Claims (10)
- 第1導電型の高濃度のワイドバンドギャップ半導体により形成される半導体基板と、前記半導体基板表面上に形成された、第1導電型の前記半導体基板よりも低濃度のワイドバンドギャップ半導体により形成される半導体堆積膜と、前記半導体堆積膜上に形成された金属堆積膜と、前記半導体堆積膜の内部で前記金属堆積膜の付近に第2導電型領域が形成されているワイドバンドギャップ半導体装置において、
少なくとも前記金属堆積膜の深さ方向の下部位置の前記半導体堆積膜に、幅方向に所定間隔毎に複数の前記第2導電型領域を配置し、
前記半導体堆積膜の間隔を、深さ方向の上部位置から下部への深さにしたがい直線的に狭まった後に直線的に広くなる菱形の形状とすることで、当該半導体堆積膜が、深さ方向の上部位置の幅に対して、深さ方向の内部側の幅が異なることを特徴とするワイドバンドギャップ半導体装置。 - 前記第2導電型領域は、平面からみてストライプ状に配置されていることを特徴とする請求項1に記載のワイドバンドギャップ半導体装置。
- 前記第2導電型領域は、深さ方向の不純物濃度分布が、任意の深さまで、当該任意の深さの不純物濃度の±90%の範囲の不純物濃度とし、任意の深さより深い部分では深さが増すにしたがって不純物濃度を低くしたことを特徴とする請求項1または2に記載のワイドバンドギャップ半導体装置。
- 一対の前記第2導電型領域間の前記半導体堆積膜の間隔は、最短部が1μm以上の幅を有することを特徴とする請求項1〜3のいずれか一つに記載のワイドバンドギャップ半導体装置。
- 一対の前記第2導電型領域間の前記半導体堆積膜の間隔は、最短部が4μm以下の幅を有することを特徴とする請求項1〜4のいずれか一つに記載のワイドバンドギャップ半導体装置。
- 前記半導体堆積膜が炭化珪素であることを特徴とする請求項1〜5のいずれか一つに記載のワイドバンドギャップ半導体装置。
- 前記半導体堆積膜が窒化ガリウムであることを特徴とする請求項1〜5のいずれか一つに記載のワイドバンドギャップ半導体装置。
- 前記金属堆積膜と前記半導体堆積膜との界面に形成されるショットキー障壁の高さが1.0eV以上であることを特徴とする請求項1〜7のいずれか一つに記載のワイドバンドギャップ半導体装置。
- 前記金属堆積膜と前記半導体堆積膜との界面に形成されるショットキー障壁の高さが0.5eV以上1.0eV未満であることを特徴とする請求項1〜7のいずれか一つに記載のワイドバンドギャップ半導体装置。
- 第1導電型の高濃度のワイドバンドギャップ半導体により形成される半導体基板と、前記半導体基板表面上に形成された、第1導電型の前記半導体基板よりも低濃度のワイドバンドギャップ半導体により形成される半導体堆積膜と、前記半導体堆積膜上に形成された金属堆積膜と、前記半導体堆積膜の内部で前記金属堆積膜の付近に第2導電型領域が形成されているワイドバンドギャップ半導体装置において、
少なくとも前記金属堆積膜の深さ方向の下部位置の前記半導体堆積膜に、幅方向に所定間隔毎に複数の前記第2導電型領域を配置する工程と、
前記半導体堆積膜の間隔を、深さ方向の上部位置から下部への深さにしたがい直線的に狭まった後に直線的に広くなる菱形の形状とすることで、当該半導体堆積膜を、深さ方向の上部位置の幅に対して、深さ方向の内部側の幅が異なるように形成する工程と、
を含むことを特徴とするワイドバンドギャップ半導体製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012091460A JP6053103B2 (ja) | 2012-04-12 | 2012-04-12 | ワイドバンドギャップ半導体装置およびその製造方法 |
PCT/JP2013/057316 WO2013153909A1 (ja) | 2012-04-12 | 2013-03-14 | ワイドバンドギャップ半導体装置およびその製造方法 |
US14/394,045 US9230958B2 (en) | 2012-04-12 | 2013-03-14 | Wide band gap semiconductor apparatus and fabrication method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012091460A JP6053103B2 (ja) | 2012-04-12 | 2012-04-12 | ワイドバンドギャップ半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013222731A JP2013222731A (ja) | 2013-10-28 |
JP6053103B2 true JP6053103B2 (ja) | 2016-12-27 |
Family
ID=49327483
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012091460A Active JP6053103B2 (ja) | 2012-04-12 | 2012-04-12 | ワイドバンドギャップ半導体装置およびその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9230958B2 (ja) |
JP (1) | JP6053103B2 (ja) |
WO (1) | WO2013153909A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6222771B2 (ja) * | 2013-11-22 | 2017-11-01 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体装置の製造方法 |
US9461039B2 (en) * | 2015-02-15 | 2016-10-04 | Tower Semiconductor Ltd. | Die including a Schottky diode |
JP6758569B2 (ja) * | 2015-03-20 | 2020-09-23 | 株式会社タムラ製作所 | 高耐圧ショットキーバリアダイオード |
JP6479615B2 (ja) * | 2015-09-14 | 2019-03-06 | 株式会社東芝 | 半導体装置の製造方法 |
JP6524002B2 (ja) * | 2016-03-16 | 2019-06-05 | 株式会社東芝 | 半導体装置 |
TWI648858B (zh) * | 2016-06-14 | 2019-01-21 | 黃知澍 | Ga-face III族/氮化物磊晶結構及其主動元件與其製作方法 |
CN106711190A (zh) * | 2017-01-24 | 2017-05-24 | 深圳基本半导体有限公司 | 一种具有高性能的半导体器件及制造方法 |
CN110870079B (zh) * | 2017-07-08 | 2024-01-09 | 株式会社Flosfia | 半导体装置 |
JP6626929B1 (ja) * | 2018-06-29 | 2019-12-25 | 京セラ株式会社 | 半導体デバイス及び電気装置 |
US10707340B2 (en) * | 2018-09-07 | 2020-07-07 | Semiconductor Components Industries, Llc | Low turn-on voltage silicon carbide rectifiers |
JP7295047B2 (ja) * | 2020-01-22 | 2023-06-20 | 株式会社東芝 | 半導体装置 |
CN117497408B (zh) * | 2023-12-28 | 2024-04-19 | 深圳天狼芯半导体有限公司 | 一种hk-igbt及其制备方法、芯片 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10233515A (ja) | 1996-12-19 | 1998-09-02 | Toshiba Corp | ショットキーバリア半導体装置とその製造方法 |
JP3467381B2 (ja) * | 1997-05-22 | 2003-11-17 | 株式会社日立製作所 | 炭化けい素ダイオード |
US7397102B2 (en) * | 2005-04-20 | 2008-07-08 | Taurus Micropower, Inc. | Junction barrier schottky with low forward drop and improved reverse block voltage |
JP3692063B2 (ja) * | 2001-03-28 | 2005-09-07 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP4892787B2 (ja) * | 2001-04-09 | 2012-03-07 | 株式会社デンソー | ショットキーダイオード及びその製造方法 |
JP4810776B2 (ja) * | 2001-08-03 | 2011-11-09 | 富士電機株式会社 | 半導体装置 |
JP4356767B2 (ja) * | 2007-05-10 | 2009-11-04 | 株式会社デンソー | ジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置 |
US7791175B2 (en) * | 2007-12-20 | 2010-09-07 | Mosaid Technologies Incorporated | Method for stacking serially-connected integrated circuits and multi-chip device made from same |
JP2009159184A (ja) * | 2007-12-26 | 2009-07-16 | Hitachi Ltd | フリーホイールダイオードとを有する回路装置、及び、ダイオードを用いた回路装置とそれを用いた電力変換器 |
JP5326405B2 (ja) * | 2008-07-30 | 2013-10-30 | 株式会社デンソー | ワイドバンドギャップ半導体装置 |
JP5567830B2 (ja) * | 2009-12-22 | 2014-08-06 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
EP2763302A4 (en) * | 2011-09-26 | 2015-04-29 | Mitsubishi Electric Corp | ALTERNATOR RECTIFIER FOR A VEHICLE |
JP2013232564A (ja) * | 2012-04-27 | 2013-11-14 | National Institute Of Advanced Industrial & Technology | 半導体装置および半導体装置の製造方法 |
WO2014022722A2 (en) * | 2012-08-02 | 2014-02-06 | Gtat Corporation | Epitaxial growth on thin lamina |
-
2012
- 2012-04-12 JP JP2012091460A patent/JP6053103B2/ja active Active
-
2013
- 2013-03-14 WO PCT/JP2013/057316 patent/WO2013153909A1/ja active Application Filing
- 2013-03-14 US US14/394,045 patent/US9230958B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2013222731A (ja) | 2013-10-28 |
US20150129894A1 (en) | 2015-05-14 |
US9230958B2 (en) | 2016-01-05 |
WO2013153909A1 (ja) | 2013-10-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6053103B2 (ja) | ワイドバンドギャップ半導体装置およびその製造方法 | |
KR101309674B1 (ko) | 절연 게이트형 바이폴라 트랜지스터와 그 제조방법 | |
US9620631B2 (en) | Power semiconductor device | |
US8841683B2 (en) | Semiconductor rectifier device | |
US10396162B2 (en) | Silicon carbide semiconductor device | |
US10418445B2 (en) | Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device | |
US10090417B2 (en) | Silicon carbide semiconductor device and fabrication method of silicon carbide semiconductor device | |
JP2019071313A (ja) | 半導体装置 | |
US20130140584A1 (en) | Semiconductor device | |
US9455326B2 (en) | Wide bandgap semiconductor device | |
JP2013232564A (ja) | 半導体装置および半導体装置の製造方法 | |
US9362392B2 (en) | Vertical high-voltage semiconductor device and fabrication method thereof | |
JP6194779B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP7263740B2 (ja) | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 | |
JP6705155B2 (ja) | 半導体装置および半導体装置の製造方法 | |
US20160155836A1 (en) | High voltage semiconductor device and manufacturing method thereof | |
JP2015207780A (ja) | ワイドバンドギャップ半導体装置 | |
US9224844B2 (en) | Semiconductor device | |
JP7030665B2 (ja) | 半導体装置 | |
JP2012094683A (ja) | ワイドバンドギャップ半導体装置 | |
KR20140035594A (ko) | 쇼트키 배리어 다이오드 및 그 제조 방법 | |
JP2024019464A (ja) | 半導体装置 | |
JP2019216223A (ja) | 半導体装置 | |
JP5476439B2 (ja) | ジャンクションバリアショットキーダイオード | |
JP2012182405A (ja) | 半導体整流装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150319 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150305 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150804 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150930 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20160301 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160601 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20160609 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160705 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160905 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20161108 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20161128 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6053103 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |