JP6758569B2 - 高耐圧ショットキーバリアダイオード - Google Patents
高耐圧ショットキーバリアダイオード Download PDFInfo
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- JP6758569B2 JP6758569B2 JP2015058519A JP2015058519A JP6758569B2 JP 6758569 B2 JP6758569 B2 JP 6758569B2 JP 2015058519 A JP2015058519 A JP 2015058519A JP 2015058519 A JP2015058519 A JP 2015058519A JP 6758569 B2 JP6758569 B2 JP 6758569B2
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- 230000004888 barrier function Effects 0.000 title claims description 56
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 97
- 239000013078 crystal Substances 0.000 claims description 92
- 229910021480 group 4 element Inorganic materials 0.000 claims description 9
- 239000007789 gas Substances 0.000 description 88
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 29
- 238000000034 method Methods 0.000 description 27
- 239000000758 substrate Substances 0.000 description 27
- 239000000460 chlorine Substances 0.000 description 20
- 239000002994 raw material Substances 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 12
- 239000002019 doping agent Substances 0.000 description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 7
- 238000005498 polishing Methods 0.000 description 7
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000002484 cyclic voltammetry Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
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- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
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- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
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- H01L21/02414—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- Chemical Kinetics & Catalysis (AREA)
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- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Chemical Vapour Deposition (AREA)
Description
(高耐圧ショットキーバリアダイオードの構成)
図1は、実施の形態に係る高耐圧ショットキーバリアダイオード1の垂直断面図である。高耐圧ショットキーバリアダイオード1は、縦型のショットキーバリアダイオードであり、第1の層10と、第1の層10に積層された第2の層12と、第1の層10上に形成されたアノード電極14と、第2の層12上に形成されたカソード電極15と、を有する。
以下に、高耐圧ショットキーバリアダイオード1の製造方法の一例について説明する。この例においては、第2の層12としてのGa2O3系基板上に、第1の層10としてのGa2O3系単結晶膜をエピタキシャル成長させる。
上記実施の形態によれば、HVPE法を用いてGa2O3系単結晶を成長させながらドーパントを添加することにより、目的の濃度のドナーを含み、かつドナー濃度分布の均一性が高い第1の層10、又は第1の層10及び第2の層12を得ることができる。これによって、耐圧特性に優れた高耐圧ショットキーバリアダイオード1を得ることができる。
Claims (5)
- 第1のIV族元素及び濃度5×1016cm−3以下のClを含む第1のGa2O3系単結晶からなり、理想係数が1.2未満となる、実効ドナー濃度が1×1013以上かつ2.0×1016cm−3以下である第1の層と、
第2のIV族元素を含む第2のGa2O3系単結晶からなり、前記第1の層よりも実効ドナー濃度が高い、前記第1の層に積層された第2の層と、
前記第1の層上に形成されたアノード電極と、
前記第2の層上に形成されたカソード電極と、
を有する、
高耐圧ショットキーバリアダイオード。 - 前記第1の層の実効ドナー濃度が1.4×1016cm−3以下である、
請求項1に記載の高耐圧ショットキーバリアダイオード。 - 前記第1のIV族元素がSiである、
請求項1又は2に記載の高耐圧ショットキーバリアダイオード。 - 前記第1のGa2O3系単結晶がGa2O3単結晶である、
請求項1〜3のいずれか1項に記載の高耐圧ショットキーバリアダイオード。 - 前記カソード電極の前記第2の層と接触する層がTiからなる、
請求項1〜4のいずれか1項に記載の高耐圧ショットキーバリアダイオード。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015058519A JP6758569B2 (ja) | 2015-03-20 | 2015-03-20 | 高耐圧ショットキーバリアダイオード |
US15/559,702 US10199512B2 (en) | 2015-03-20 | 2016-03-09 | High voltage withstand Ga2O3-based single crystal schottky barrier diode |
EP16768439.8A EP3273487A4 (en) | 2015-03-20 | 2016-03-09 | High withstand voltage schottky barrier diode |
PCT/JP2016/057421 WO2016152536A1 (ja) | 2015-03-20 | 2016-03-09 | 高耐圧ショットキーバリアダイオード |
EP21187580.2A EP3933935A1 (en) | 2015-03-20 | 2016-03-09 | High withstand voltage schottky barrier diode |
CN201680016834.9A CN107534062B (zh) | 2015-03-20 | 2016-03-09 | 高耐压肖特基势垒二极管 |
TW105107936A TWI707057B (zh) | 2015-03-20 | 2016-03-15 | 高耐壓肖特基能障二極體 |
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Application Number | Priority Date | Filing Date | Title |
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JP2015058519A JP6758569B2 (ja) | 2015-03-20 | 2015-03-20 | 高耐圧ショットキーバリアダイオード |
Publications (2)
Publication Number | Publication Date |
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JP2016178250A JP2016178250A (ja) | 2016-10-06 |
JP6758569B2 true JP6758569B2 (ja) | 2020-09-23 |
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Application Number | Title | Priority Date | Filing Date |
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JP2015058519A Active JP6758569B2 (ja) | 2015-03-20 | 2015-03-20 | 高耐圧ショットキーバリアダイオード |
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Country | Link |
---|---|
US (1) | US10199512B2 (ja) |
EP (2) | EP3273487A4 (ja) |
JP (1) | JP6758569B2 (ja) |
CN (1) | CN107534062B (ja) |
TW (1) | TWI707057B (ja) |
WO (1) | WO2016152536A1 (ja) |
Families Citing this family (9)
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JP6951715B2 (ja) * | 2016-09-15 | 2021-10-20 | 株式会社Flosfia | 半導体膜の製造方法及び半導体膜並びにドーピング用錯化合物及びドーピング方法 |
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US11417523B2 (en) * | 2018-01-29 | 2022-08-16 | Northwestern University | Amphoteric p-type and n-type doping of group III-VI semiconductors with group-IV atoms |
JP7222669B2 (ja) | 2018-11-16 | 2023-02-15 | 株式会社タムラ製作所 | 単結晶育成方法、種結晶、及び単結晶 |
JP7191322B2 (ja) * | 2018-12-26 | 2022-12-19 | 国立研究開発法人物質・材料研究機構 | 半導体基板の製造方法 |
CN110197854B (zh) * | 2019-06-20 | 2023-02-24 | 中国电子科技集团公司第十三研究所 | 氧化镓sbd终端结构及制备方法 |
CN110265486B (zh) * | 2019-06-20 | 2023-03-24 | 中国电子科技集团公司第十三研究所 | 氧化镓sbd终端结构及制备方法 |
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CA2747776A1 (en) * | 2009-04-15 | 2010-10-21 | Sumitomo Electric Industries, Ltd. | Substrate, substrate with thin film, semiconductor device, and method of manufacturing semiconductor device |
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WO2013054580A1 (ja) * | 2011-10-13 | 2013-04-18 | 住友電気工業株式会社 | 炭化珪素基板、炭化珪素半導体装置、炭化珪素基板の製造方法、および炭化珪素半導体装置の製造方法 |
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JP5991140B2 (ja) | 2012-10-29 | 2016-09-14 | Jfeスチール株式会社 | 容器用鋼板、その製造に用いられる処理液、および、容器用鋼板の製造方法 |
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US10651317B2 (en) * | 2016-04-15 | 2020-05-12 | Macom Technology Solutions Holdings, Inc. | High-voltage lateral GaN-on-silicon Schottky diode |
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