JP5453867B2 - ショットキーバリアダイオードを備えた炭化珪素半導体装置およびその製造方法 - Google Patents
ショットキーバリアダイオードを備えた炭化珪素半導体装置およびその製造方法 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 51
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 51
- 230000004888 barrier function Effects 0.000 title claims description 29
- 239000004065 semiconductor Substances 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 title claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 76
- 239000002184 metal Substances 0.000 claims description 76
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 48
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 43
- 239000001301 oxygen Substances 0.000 claims description 43
- 229910052760 oxygen Inorganic materials 0.000 claims description 43
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 27
- 229910052750 molybdenum Inorganic materials 0.000 claims description 27
- 239000011733 molybdenum Substances 0.000 claims description 27
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 25
- 229910052719 titanium Inorganic materials 0.000 claims description 25
- 239000010936 titanium Substances 0.000 claims description 25
- 229910045601 alloy Inorganic materials 0.000 claims description 24
- 239000000956 alloy Substances 0.000 claims description 24
- 229910052759 nickel Inorganic materials 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 17
- 239000012298 atmosphere Substances 0.000 claims description 9
- 239000000470 constituent Substances 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 172
- 238000000137 annealing Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 6
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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Description
また、請求項2に記載の発明では、金属層(4b)の上に該金属層(4b)よりも酸化し難い金属にて構成されるキャップ層(4d)を形成する工程と、キャップ層(4d)で金属層(4b)を覆った状態で熱処理を行う工程と、を含み、接合用電極(4c)を形成する工程を熱処理後に行うことを特徴としている。
このように、金属層(4b)を形成した後に熱処理を行うことがあるが、この場合に、熱処理の前に金属層(4b)をキャップ層(4d)で覆っておくことにより、熱処理時に金属層(4b)が酸化されてしまうことを抑制することができる。
さらに、酸化物層(4a)の平均酸素濃度(重量%)を変化させることにより、バリアハイトの値を制御することができる。したがって、バリアハイトを制御し、逆方向リーク電流値が高くなることを抑制できる。
本発明の第1実施形態について説明する。図1に、本実施形態にかかるSiC半導体装置の断面図を示す。また、図2に、図1に示すSiC半導体装置の上面レイアウト図を示す。図1は、図2のA−A断面に相当する断面図である。以下、これらを参照して、本実施形態のSiC半導体装置について説明する。
本発明の第2実施形態について説明する。本実施形態のSiC半導体装置は、第1実施形態に対してSBD10におけるショットキー電極4の構造を変更したものであり、その他に関しては第1実施形態と同様であるため、異なる部分についてのみ説明する。
上記実施形態では、酸素雰囲気中においてモリブデン、チタン、ニッケルもしくはこれらの合金層を蒸着していくことにより、これらを酸化させ、酸化物層4aを形成する例について説明した。しかしながら、これは単なる一例を示したに過ぎない。例えば、酸素雰囲気中で蒸着金属を酸化させながら酸化物層4aの平均酸素濃度を制御することもできるが、更に後で熱処理を行うことで酸化物層4aの平均酸素濃度を制御することできる。また、モリブデン、チタン、ニッケルもしくはこれらの合金層を蒸着してから、後で熱処理を行うことで酸化物層4aとすることもできる。
1a 主表面
1b 裏面
2 n-型ドリフト層
3 絶縁膜
4 ショットキー電極
4a 酸化物層
4b 金属層
4c 接合用電極
4d キャップ層
5 オーミック電極
10 SBD
Claims (4)
- 主表面(1a)および裏面(1b)を有し、第1導電型の炭化珪素からなる基板(1)と、
前記基板(1)の前記主表面(1a)上に形成され、前記基板(1)よりも低不純物濃度とされた第1導電型の炭化珪素からなるドリフト層(2)と、
前記ドリフト層(2)の上に配置され、該ドリフト層(2)におけるセル部において、前記ドリフト層(2)の表面とショットキー接触するように形成されたショットキー電極(4)と、
前記基板(1)の裏面(1b)に形成されたオーミック電極(5)と、を有してなるショットキーバリアダイオード(10)を備えた炭化珪素半導体装置において、
前記ショットキー電極(4)は、前記ドリフト層(2)と直接接触し、モリブデン、チタン、ニッケルもしくはこれらの合金の酸化物にて構成された酸化物層(4a)を含み、
前記ショットキー電極(4)は、前記酸化物層(4a)の上に形成され、該酸化物層(4a)の構成金属と同じ金属で構成された金属層(4b)と、前記金属層(4b)の上に形成された接合用電極(4c)と、を有し、
前記金属層(4b)と前記接合用電極(4c)との間には、前記金属層(4)の構成金属よりも酸化し難い金属で構成されたキャップ層(4d)が備えられていることを特徴とするショットキーバリアダイオードを備えた炭化珪素半導体装置。 - 主表面(1a)および裏面(1b)を有し、第1導電型の炭化珪素からなる基板(1)と、
前記基板(1)の前記主表面(1a)上に形成され、前記基板(1)よりも低不純物濃度とされた第1導電型の炭化珪素からなるドリフト層(2)と、
前記ドリフト層(2)の上に配置され、該ドリフト層(2)におけるセル部において、前記ドリフト層(2)の表面とショットキー接触するように形成されたショットキー電極(4)と、
前記基板(1)の裏面(1b)に形成されたオーミック電極(5)と、を有してなるショットキーバリアダイオード(10)を備えた炭化珪素半導体装置の製造方法であって、
前記ショットキー電極(4)を形成する工程として、前記ドリフト層(2)の表面に、該ドリフト層(2)と直接接触し、モリブデン、チタン、ニッケルもしくはこれらの合金の酸化物にて構成される酸化物層(4a)を形成する工程を含み、
前記ショットキー電極(4)を形成する工程として、
前記酸化物層(4a)の上に、該酸化物層(4a)の構成金属と同じ金属で構成される金属層(4b)を形成する工程と、
前記金属層(4b)の上に、接合用電極(4c)を形成する工程と、を含んでおり、
さらに、前記金属層(4b)の上に該金属層(4b)よりも酸化し難い金属にて構成されるキャップ層(4d)を形成する工程と、
前記キャップ層(4d)で前記金属層(4b)を覆った状態で熱処理を行う工程と、を含み、
前記接合用電極(4c)を形成する工程を前記熱処理後に行うことを特徴とするショットキーバリアダイオードを備えた炭化珪素半導体装置の製造方法。 - 前記酸化物層(4a)を形成する工程では、モリブデン、チタン、ニッケルもしくはこれらの合金層を酸化雰囲気中で形成すること、もしくは、モリブデン、チタン、ニッケルもしくはこれらの合金層を形成したのち加熱処理を行うことで酸化することにより、前記酸化物層(4a)を形成することを特徴とする請求項2に記載のショットキーバリアダイオードを備えた炭化珪素半導体装置の製造方法。
- 前記酸化物層(4a)を形成する工程では、モリブデン、チタン、ニッケルもしくはこれらの合金層を酸化雰囲気中で形成したのち、さらに熱処理を行うことで前記酸化物層(4a)内の平均酸素濃度を制御することを特徴とする請求項2に記載のショットキーバリアダイオードを備えた炭化珪素半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2009071827A JP5453867B2 (ja) | 2009-03-24 | 2009-03-24 | ショットキーバリアダイオードを備えた炭化珪素半導体装置およびその製造方法 |
DE102010002798A DE102010002798B8 (de) | 2009-03-24 | 2010-03-12 | Siliziumkarbid-Halbleitervorrichtung mit Schottky-Sperrschichtdiode und Verfahren zu deren Fertigung |
US12/659,853 US8324704B2 (en) | 2009-03-24 | 2010-03-23 | Silicon carbide semiconductor device with Schottky barrier diode and method of manufacturing the same |
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JP2009071827A JP5453867B2 (ja) | 2009-03-24 | 2009-03-24 | ショットキーバリアダイオードを備えた炭化珪素半導体装置およびその製造方法 |
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US10141410B2 (en) | 2016-01-12 | 2018-11-27 | Kabushiki Kaisha Toshiba | Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle and elevator |
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WO2012083230A2 (en) * | 2010-12-17 | 2012-06-21 | Diodes Zetex Semiconductors Limited | High efficiency rectifier |
US8937319B2 (en) * | 2011-03-07 | 2015-01-20 | Shindengen Electric Manufacturing Co., Ltd. | Schottky barrier diode |
WO2014087601A1 (ja) * | 2012-12-03 | 2014-06-12 | パナソニック株式会社 | 半導体装置およびその製造方法 |
JP2015032627A (ja) * | 2013-07-31 | 2015-02-16 | 株式会社東芝 | 半導体装置 |
US9691910B2 (en) * | 2013-08-19 | 2017-06-27 | Idemitsu Kosan Co., Ltd. | Oxide semiconductor substrate and schottky barrier diode |
CN103839784A (zh) * | 2013-12-31 | 2014-06-04 | 北京市润大正兴电子技术有限公司 | 离子注入掩膜方法及碳化硅肖特基二极管制造方法 |
KR102216310B1 (ko) * | 2014-02-24 | 2021-02-18 | 한국전자통신연구원 | 산화물 반도체 형성방법 |
JP6558367B2 (ja) * | 2014-06-13 | 2019-08-14 | 住友電気工業株式会社 | 半導体積層体、半導体積層体の製造方法および半導体装置の製造方法 |
JP6158153B2 (ja) | 2014-09-19 | 2017-07-05 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP6584880B2 (ja) * | 2015-09-11 | 2019-10-02 | 株式会社東芝 | 半導体装置 |
JP6782615B2 (ja) | 2016-11-21 | 2020-11-11 | 株式会社デンソー | 半導体装置の製造方法 |
JP6439774B2 (ja) | 2016-11-21 | 2018-12-19 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
JP2019054170A (ja) * | 2017-09-15 | 2019-04-04 | 株式会社東芝 | 半導体装置 |
JP6977465B2 (ja) | 2017-10-06 | 2021-12-08 | 株式会社デンソー | 半導体装置の製造方法 |
CN110504326B (zh) * | 2018-05-17 | 2022-10-14 | 联华电子股份有限公司 | 萧特基二极管 |
EP4207308A1 (en) * | 2020-08-27 | 2023-07-05 | Shindengen Electric Manufacturing Co., Ltd. | Wide gap semiconductor device |
RU206535U1 (ru) * | 2021-03-10 | 2021-09-15 | Акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" | Тестовая ячейка для контроля качества изготовления диодов шоттки на карбиде кремния |
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JPS63157466A (ja) * | 1986-12-20 | 1988-06-30 | Fujitsu Ltd | シヨツトキ−バリアダイオ−ド |
US5027166A (en) * | 1987-12-04 | 1991-06-25 | Sanken Electric Co., Ltd. | High voltage, high speed Schottky semiconductor device and method of fabrication |
JP3665548B2 (ja) * | 2000-09-01 | 2005-06-29 | 新電元工業株式会社 | ショットキー接合型半導体デバイス |
US8089097B2 (en) * | 2002-12-27 | 2012-01-03 | Momentive Performance Materials Inc. | Homoepitaxial gallium-nitride-based electronic devices and method for producing same |
JP4814533B2 (ja) * | 2005-02-25 | 2011-11-16 | ローム株式会社 | 半導体装置およびその製造方法 |
JP5037003B2 (ja) * | 2005-11-25 | 2012-09-26 | 一般財団法人電力中央研究所 | ショットキーバリアダイオードおよびその使用方法 |
JP4356764B2 (ja) * | 2007-04-18 | 2009-11-04 | 株式会社デンソー | 炭化珪素半導体装置 |
JP4356767B2 (ja) * | 2007-05-10 | 2009-11-04 | 株式会社デンソー | ジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置 |
JP4420062B2 (ja) * | 2007-05-10 | 2010-02-24 | 株式会社デンソー | ジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置 |
JP4375439B2 (ja) * | 2007-05-30 | 2009-12-02 | 株式会社デンソー | ジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置 |
JP4333782B2 (ja) * | 2007-07-05 | 2009-09-16 | 株式会社デンソー | ジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置 |
JP2009158519A (ja) * | 2007-12-25 | 2009-07-16 | Toyota Motor Corp | 半導体装置及びその製造方法 |
US7851881B1 (en) * | 2008-03-21 | 2010-12-14 | Microsemi Corporation | Schottky barrier diode (SBD) and its off-shoot merged PN/Schottky diode or junction barrier Schottky (JBS) diode |
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Cited By (1)
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US10141410B2 (en) | 2016-01-12 | 2018-11-27 | Kabushiki Kaisha Toshiba | Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle and elevator |
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US20100244049A1 (en) | 2010-09-30 |
DE102010002798A1 (de) | 2010-10-07 |
US8324704B2 (en) | 2012-12-04 |
DE102010002798B4 (de) | 2012-11-29 |
JP2010225877A (ja) | 2010-10-07 |
DE102010002798B8 (de) | 2013-03-07 |
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