JP6158153B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- JP6158153B2 JP6158153B2 JP2014190928A JP2014190928A JP6158153B2 JP 6158153 B2 JP6158153 B2 JP 6158153B2 JP 2014190928 A JP2014190928 A JP 2014190928A JP 2014190928 A JP2014190928 A JP 2014190928A JP 6158153 B2 JP6158153 B2 JP 6158153B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- sic
- manufacturing
- layer
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 73
- 238000004519 manufacturing process Methods 0.000 title claims description 40
- 229910052799 carbon Inorganic materials 0.000 claims description 67
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 64
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 64
- 229910052760 oxygen Inorganic materials 0.000 claims description 64
- 239000001301 oxygen Substances 0.000 claims description 64
- 239000012535 impurity Substances 0.000 claims description 36
- 230000003647 oxidation Effects 0.000 claims description 32
- 238000007254 oxidation reaction Methods 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 18
- 238000005468 ion implantation Methods 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 230000004913 activation Effects 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910002808 Si–O–Si Inorganic materials 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 105
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 99
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000007812 deficiency Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 150000001721 carbon Chemical class 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本実施形態の半導体装置は、p型のSiC層と、SiC層と電気的に接続される金属のコンタクト電極と、SiC層のコンタクト電極側に設けられ、酸素濃度が1×1016cm−3以上1×1021cm−3以下の領域(酸素領域)と、を備える。
本実施形態の半導体装置は、SiC層とコンタクト電極との界面にp型不純物が偏析していること以外は、第1の実施形態と同様である。また、本実施形態の半導体装置の製造方法は、活性化アニールの後、熱処理の前に、SiC層上に第2の熱酸化により第2の熱酸化膜を形成し、第2の熱酸化膜を剥離すること以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については、記述を省略する。
12 アノード層(SiC層)
14 アノード電極(コンタクト電極)
16 酸素領域
100 PINダイオード(半導体装置)
Claims (18)
- p型のSiC層と、
前記SiC層と電気的に接続される金属のコンタクト電極と、
前記SiC層の前記コンタクト電極側に設けられ、酸素濃度が1×1016cm−3以上1×1021cm−3以下の領域と、
を備える半導体装置。 - 前記領域の酸素濃度が1×1017cm−3以上1×1020cm−3以下である請求項1記載の半導体装置。
- 前記領域の前記酸素濃度のピークの位置と、前記SiC層と前記コンタクト電極との界面との距離が10nm以下である請求項1又は請求項2記載の半導体装置。
- 前記領域の前記酸素濃度のピークの半値全幅が10nm以下である請求項1乃至請求項3いずれか一項記載の半導体装置。
- 前記領域にSi−O−Si結合がある請求項1乃至請求項4いずれか一項記載の半導体装置。
- 前記領域中の酸素がSiC格子の炭素を置換している請求項1乃至請求項4いずれか一項記載の半導体装置。
- 前記金属はNi(ニッケル)である請求項1乃至請求項6いずれか一項記載の半導体装置。
- 前記SiC層と前記コンタクト電極との界面にp型不純物が偏析している請求項1乃至請求項7いずれか一項記載の半導体装置。
- 前記p型不純物は、Al(アルミニウム)、B(ボロン)及びGa(ガリウム)の群から選ばれる少なくとも一つの元素である請求項8記載の半導体装置。
- 前記元素の濃度が1×1019cm−3以上1×1021cm−3以下である請求項9記載の半導体装置。
- p型のSiC層を形成し、
酸素を含有する雰囲気中、SiCの酸化量が1nm未満となる条件で熱処理を行い、前記SiC層に酸素を含む領域を形成し、
前記領域を形成した後に、前記SiC層上に金属のコンタクト電極を形成する半導体装置の製造方法。 - 前記SiC層の形成は、p型不純物のSiC基板へのイオン注入と前記p型不純物を活性化する活性化アニールによる請求項11記載の半導体装置の製造方法。
- 前記熱処理の温度は900℃以下である請求項11又は請求項12記載の半導体装置の製造方法。
- 前記イオン注入の前に、前記SiC基板上に第1の熱酸化により第1の熱酸化膜を形成し、前記第1の熱酸化膜を剥離する請求項12記載の半導体装置の製造方法。
- 前記活性化アニールの後、前記熱処理の前に、前記SiC層上に第2の熱酸化により第2の熱酸化膜を形成し、前記第2の熱酸化膜を剥離する請求項12記載の半導体装置の製造方法。
- 前記p型不純物は、Al(アルミニウム)、B(ボロン)及びGa(ガリウム)の群から選ばれる少なくとも一つの元素である請求項12記載の半導体装置の製造方法。
- 前記第1の熱酸化の温度が1200℃以上1500℃以下である請求項14記載の半導体装置の製造方法。
- 前記第2の熱酸化の温度が1200℃以上1500℃以下である請求項15記載の半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014190928A JP6158153B2 (ja) | 2014-09-19 | 2014-09-19 | 半導体装置及びその製造方法 |
EP15173835.8A EP3001459A3 (en) | 2014-09-19 | 2015-06-25 | Semiconductor device and method of manufacturing the same |
US14/751,567 US10541307B2 (en) | 2014-09-19 | 2015-06-26 | Diode with an oxygen concentration region |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014190928A JP6158153B2 (ja) | 2014-09-19 | 2014-09-19 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016063110A JP2016063110A (ja) | 2016-04-25 |
JP6158153B2 true JP6158153B2 (ja) | 2017-07-05 |
Family
ID=53487306
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014190928A Active JP6158153B2 (ja) | 2014-09-19 | 2014-09-19 | 半導体装置及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10541307B2 (ja) |
EP (1) | EP3001459A3 (ja) |
JP (1) | JP6158153B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11532721B2 (en) | 2020-05-14 | 2022-12-20 | Kabushiki Kaisha Toshiba | Semiconductor device, method of manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6305294B2 (ja) | 2014-09-19 | 2018-04-04 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP6208106B2 (ja) | 2014-09-19 | 2017-10-04 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP6584966B2 (ja) | 2016-01-12 | 2019-10-02 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び昇降機 |
JP2018147984A (ja) * | 2017-03-03 | 2018-09-20 | 株式会社東芝 | 半導体装置の製造方法及び製造装置 |
JP2019106419A (ja) * | 2017-12-11 | 2019-06-27 | 三菱電機株式会社 | 半導体装置 |
JP6896672B2 (ja) | 2018-03-21 | 2021-06-30 | 株式会社東芝 | 半導体装置及びその製造方法 |
TWI716304B (zh) * | 2020-03-30 | 2021-01-11 | 環球晶圓股份有限公司 | 碳化矽晶片的表面加工方法 |
JP7271484B2 (ja) * | 2020-09-15 | 2023-05-11 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5459107A (en) * | 1992-06-05 | 1995-10-17 | Cree Research, Inc. | Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures |
JP3628079B2 (ja) * | 1995-08-11 | 2005-03-09 | Hoya株式会社 | 炭化珪素薄膜製造方法並びに炭化珪素薄膜および積層基板 |
JP3361061B2 (ja) * | 1998-09-17 | 2003-01-07 | 株式会社東芝 | 半導体装置 |
JP2004327578A (ja) * | 2003-04-23 | 2004-11-18 | Hitachi Cable Ltd | 結晶薄膜半導体装置およびその製造方法 |
US7727904B2 (en) * | 2005-09-16 | 2010-06-01 | Cree, Inc. | Methods of forming SiC MOSFETs with high inversion layer mobility |
US8263484B2 (en) * | 2009-03-03 | 2012-09-11 | Sumco Corporation | High resistivity silicon wafer and method for manufacturing the same |
JP5453867B2 (ja) | 2009-03-24 | 2014-03-26 | 株式会社デンソー | ショットキーバリアダイオードを備えた炭化珪素半導体装置およびその製造方法 |
EP2471981A4 (en) * | 2009-08-27 | 2013-04-17 | Nippon Steel & Sumitomo Metal Corp | SIC MONOCRYSTAL WAFER AND METHOD FOR MANUFACTURING THE SAME |
US8445386B2 (en) * | 2010-05-27 | 2013-05-21 | Cree, Inc. | Smoothing method for semiconductor material and wafers produced by same |
US9478616B2 (en) * | 2011-03-03 | 2016-10-25 | Cree, Inc. | Semiconductor device having high performance channel |
JP5284389B2 (ja) * | 2011-03-07 | 2013-09-11 | 株式会社東芝 | 半導体装置 |
JP5373045B2 (ja) * | 2011-12-16 | 2013-12-18 | 三洋電機株式会社 | 光電変換装置 |
WO2013100155A1 (ja) * | 2011-12-28 | 2013-07-04 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
WO2014103186A1 (ja) * | 2012-12-27 | 2014-07-03 | パナソニック株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP6018501B2 (ja) * | 2012-12-27 | 2016-11-02 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP6305294B2 (ja) | 2014-09-19 | 2018-04-04 | 株式会社東芝 | 半導体装置及びその製造方法 |
DE102014114683B4 (de) * | 2014-10-09 | 2016-08-04 | Infineon Technologies Ag | Verfahren zur herstellung eines halbleiter-wafers mit einer niedrigen konzentration von interstitiellem sauerstoff |
-
2014
- 2014-09-19 JP JP2014190928A patent/JP6158153B2/ja active Active
-
2015
- 2015-06-25 EP EP15173835.8A patent/EP3001459A3/en not_active Withdrawn
- 2015-06-26 US US14/751,567 patent/US10541307B2/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11532721B2 (en) | 2020-05-14 | 2022-12-20 | Kabushiki Kaisha Toshiba | Semiconductor device, method of manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator |
US11901430B2 (en) | 2020-05-14 | 2024-02-13 | Kabushiki Kaisha Toshiba | Semiconductor device, method of manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator |
Also Published As
Publication number | Publication date |
---|---|
US20160087043A1 (en) | 2016-03-24 |
EP3001459A3 (en) | 2016-04-20 |
JP2016063110A (ja) | 2016-04-25 |
EP3001459A2 (en) | 2016-03-30 |
US10541307B2 (en) | 2020-01-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6158153B2 (ja) | 半導体装置及びその製造方法 | |
JP6305294B2 (ja) | 半導体装置及びその製造方法 | |
JP6271356B2 (ja) | 半導体装置の製造方法 | |
US20170200787A1 (en) | Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle and elevator | |
JP6032831B2 (ja) | SiC半導体装置及びその製造方法 | |
JP6271309B2 (ja) | 半導体基板の製造方法、半導体基板および半導体装置 | |
JP6222771B2 (ja) | 炭化珪素半導体装置の製造方法 | |
JP6415946B2 (ja) | 半導体装置の製造方法及び半導体装置 | |
JP6189261B2 (ja) | 半導体装置およびその製造方法 | |
JP2015061001A (ja) | 半導体装置の製造方法 | |
JP2014187112A (ja) | 半導体装置およびその製造方法 | |
US10707306B2 (en) | Semiconductor device and method of manufacturing the same | |
JP6068042B2 (ja) | 炭化珪素半導体装置およびその製造方法 | |
JP2015061018A (ja) | 半導体装置およびその製造方法 | |
JP2016201500A (ja) | 炭化ケイ素mos型半導体装置およびその製造方法 | |
JP5921089B2 (ja) | エピタキシャルウエハの製造方法及び半導体装置の製造方法 | |
JP2019169485A (ja) | 半導体装置及びその製造方法 | |
JP6567601B2 (ja) | 半導体装置 | |
JP6896672B2 (ja) | 半導体装置及びその製造方法 | |
JP2020150242A (ja) | 半導体装置 | |
JP2021086896A (ja) | 絶縁ゲート型半導体装置及び絶縁ゲート型半導体装置の製造方法 | |
JP6074785B2 (ja) | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 | |
JP2015035620A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160909 |
|
TRDD | Decision of grant or rejection written | ||
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170428 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170509 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170607 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6158153 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |