JP6584966B2 - 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び昇降機 - Google Patents
半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び昇降機 Download PDFInfo
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- JP6584966B2 JP6584966B2 JP2016003643A JP2016003643A JP6584966B2 JP 6584966 B2 JP6584966 B2 JP 6584966B2 JP 2016003643 A JP2016003643 A JP 2016003643A JP 2016003643 A JP2016003643 A JP 2016003643A JP 6584966 B2 JP6584966 B2 JP 6584966B2
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- 239000004065 semiconductor Substances 0.000 title claims description 125
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 124
- 239000002184 metal Substances 0.000 claims description 124
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 118
- 229910052760 oxygen Inorganic materials 0.000 claims description 118
- 239000001301 oxygen Substances 0.000 claims description 118
- 239000012535 impurity Substances 0.000 claims description 51
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 22
- 230000003647 oxidation Effects 0.000 claims description 21
- 238000007254 oxidation reaction Methods 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 19
- 239000010936 titanium Substances 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910002808 Si–O–Si Inorganic materials 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 165
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 158
- 239000010410 layer Substances 0.000 description 122
- 229910052799 carbon Inorganic materials 0.000 description 61
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 58
- 230000004888 barrier function Effects 0.000 description 57
- 230000004048 modification Effects 0.000 description 34
- 238000012986 modification Methods 0.000 description 34
- 239000000758 substrate Substances 0.000 description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 230000005684 electric field Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 230000006378 damage Effects 0.000 description 5
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 4
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 150000001721 carbon Chemical class 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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Description
本実施形態の半導体装置は、n型のSiC領域と、SiC領域に接した電極と、酸素を含む、SiC領域内の電極側の領域と、を備える。
本実施形態の半導体装置は、第1の電極(電極)に接した、第1のSiC領域と第1の電極との間の複数のp型の第2のSiC領域を、更に備えること以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については、記述を省略する。本実施形態の半導体装置は、JBS(Junction Barrier Schottky)ダイオードである。
本実施形態の半導体装置は、第1の電極に接し、p型の第2のSiC領域と第1の電極との間に設けられ、p型の第2のSiC領域よりもp型不純物濃度の高いp型の第3のSiC領域を、更に備えること以外は、第2の実施形態と同様である。したがって、第2の実施形態と重複する内容については、記述を省略する。本実施形態の半導体装置は、MPS(Merged PiN/Schottky)ダイオードである。
本実施形態の半導体装置は、n型の第1のSiC領域(SiC領域)と第1の電極(電極)との間に設けられ、第1の電極に電気的に接続され、第1の電極よりも大きい仕事関数を有する第3の電極を、更に備えること以外は、第1の実施形態と同様である。本実施形態の半導体装置は、ドリフト領域に対する障壁が低い電極と、高い電極とを備えるSBDである。
本実施形態の半導体装置は、MOSFET(Metal Oxide Semiconductor Field Effect Transistor)である。
本変形例の半導体装置は、p型のウェルコンタクト領域を備えること以外は、第5の実施形態と同様である。したがって、第5の実施形態と重複する内容については、記述を省略する。
本変形例の半導体装置は、p型の電界緩和領域、p型のアノード領域を備えること以外は、第5の実施形態と同様である。したがって、第5の実施形態と重複する内容については、記述を省略する。
本変形例の半導体装置は、p型のウェルコンタクト領域の深さが、p型のウェル領域よりも深いこと以外は、第5の実施形態の第1の変形例と同様である。したがって、第5の実施形態の第1の変形例と重複する内容については、記述を省略する。
本変形例の半導体装置は、第2のトレンチ内が金属層で埋め込まれていること以外は、第5の実施形態の第3の変形例と同様である。したがって、第5の実施形態の第3の変形例と重複する内容については、記述を省略する。
本実施形態の半導体装置は、還流ダイオードとして、2種類のショットキー障壁高さを有するSBDを備える点で、第5の実施形態と異なる。第5の実施形態と重複する内容については記述を省略する。
本変形例の半導体装置は、p型のウェルコンタクト領域と、p型のアノード領域を備えること以外は、第6の実施形態と同様である。したがって、第6の実施形態と重複する内容については、記述を省略する。
本実施形態の半導体装置は、プレーナ構造のMOSFETである点で、第6の実施形態と異なる。以下、第6の実施形態と重複する内容については記述を省略する。
本変形例の半導体装置は、2つのトレンチ間に、ソース領域及びウェル領域が設けられる点で、第7の実施形態と異なる。以下、第7の実施形態と重複する内容については記述を省略する。
本実施形態のインバータ回路及び駆動装置は、第5の実施形態の半導体装置を備える駆動装置である。
本実施形態の車両は、第5の実施形態の半導体装置を備える車両である。
本実施形態の車両は、第5の実施形態の半導体装置を備える車両である。
本実施形態の昇降機は、第5の実施形態の半導体装置を備える昇降機である。
14 酸素領域(領域)
16 アノード電極(電極)
40 金属層(電極)
40a 金属層(電極)
40b 金属層(電極)
100 SBD(半導体装置)
150 インバータ回路
200 JBSダイオード(半導体装置)
300 MPSダイオード(半導体装置)
400 SBD(半導体装置)
500 MOSFET(半導体装置)
510 MOSFET(半導体装置)
520 MOSFET(半導体装置)
530 MOSFET(半導体装置)
600 MOSFET(半導体装置)
610 MOSFET(半導体装置)
700 MOSFET(半導体装置)
710 MOSFET(半導体装置)
800 駆動装置
900 車両
1000 車両
1100 昇降機
Claims (14)
- n型のSiC領域と、
前記SiC領域に接した電極と、
酸素を含む、前記SiC領域内の前記電極の側の領域と、
を備え、
前記領域の酸素濃度が1×10 16 cm −3 以上1×10 21 cm −3 以下である半導体装置。 - 前記電極は金属を含む請求項1記載の半導体装置。
- 前記金属は、Ni(ニッケル)、Ti(チタン)又はMo(モリブデン)である請求項2記載の半導体装置。
- 前記領域の酸素の濃度分布のピークの頂部の位置と、前記電極との距離が10nm以下である請求項1乃至請求項3いずれか一項記載の半導体装置。
- 前記領域の酸素の濃度分布のピークの半値全幅が10nm以下である請求項1乃至請求項4いずれか一項記載の半導体装置。
- 前記領域にSi−O−Si結合がある請求項1乃至請求項5いずれか一項記載の半導体装置。
- 前記SiC領域のn型不純物濃度が1×1015cm−3以上1×1018cm−3以下である請求項1乃至請求項6いずれか一項記載の半導体装置。
- 酸素を含有する雰囲気中、SiCの酸化量が1nm未満となる条件で熱処理を行い、n型のSiC領域に酸素を含む領域を形成し、
前記領域を形成した後に、前記SiC領域の上に電極を形成し、
前記熱処理の温度は900℃以下である半導体装置の製造方法。 - 前記電極は金属を含む請求項8記載の半導体装置の製造方法。
- 酸素を含有する雰囲気中、SiCの酸化量が1nm未満となる条件で熱処理を行い、n型のSiC領域に酸素を含む領域を形成し、
前記領域を形成した後に、前記SiC領域の上に電極を形成し、
前記熱処理の前に、前記SiC領域の上に熱酸化により熱酸化膜を形成し、前記熱酸化膜を剥離し、
前記熱酸化の温度が1200℃以上1500℃以下である半導体装置の製造方法。 - 請求項1乃至請求項7いずれか一項記載の半導体装置を備えるインバータ回路。
- 請求項1乃至請求項7いずれか一項記載の半導体装置を備える駆動装置。
- 請求項1乃至請求項7いずれか一項記載の半導体装置を備える車両。
- 請求項1乃至請求項7いずれか一項記載の半導体装置を備える昇降機。
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