JP6068042B2 - 炭化珪素半導体装置およびその製造方法 - Google Patents
炭化珪素半導体装置およびその製造方法 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 166
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 166
- 239000004065 semiconductor Substances 0.000 title claims description 66
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 239000000758 substrate Substances 0.000 claims description 105
- 238000010438 heat treatment Methods 0.000 claims description 86
- 238000000034 method Methods 0.000 claims description 46
- 239000007789 gas Substances 0.000 claims description 36
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 28
- 239000012298 atmosphere Substances 0.000 claims description 23
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 19
- 125000004437 phosphorous atom Chemical group 0.000 claims description 19
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 18
- 229910052786 argon Inorganic materials 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 11
- 239000011261 inert gas Substances 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 8
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 8
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 4
- 229960001730 nitrous oxide Drugs 0.000 claims description 4
- 235000013842 nitrous oxide Nutrition 0.000 claims description 4
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 40
- 210000000746 body region Anatomy 0.000 description 23
- 235000012239 silicon dioxide Nutrition 0.000 description 20
- 239000000377 silicon dioxide Substances 0.000 description 20
- 230000008569 process Effects 0.000 description 16
- 238000000137 annealing Methods 0.000 description 15
- 239000012535 impurity Substances 0.000 description 15
- 230000003647 oxidation Effects 0.000 description 15
- 238000007254 oxidation reaction Methods 0.000 description 15
- 238000003949 trap density measurement Methods 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910005883 NiSi Inorganic materials 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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Description
本実施の形態に係るMOSFET100の製造方法によれば、第1の加熱工程後に、炭化珪素基板10を窒素原子またはリン原子を含む気体雰囲気下において1300℃以上1500℃以下の温度に加熱する第2の加熱工程が実施される。炭化珪素基板10を窒素原子またはリン原子を含む気体雰囲気下において1300℃以上で加熱することにより、炭化珪素基板10とゲート酸化膜91との界面に形成されたトラップ密度を効果的に低減することができる。それゆえ、閾値電圧の変動が小さいMOSFET100を得ることができる。また、加熱温度は1500℃以下であるために、炭化珪素基板10が軟化することを抑制することができる。
Claims (9)
- 炭化珪素基板を準備する工程と、
前記炭化珪素基板を酸素雰囲気下において加熱する第1の加熱工程と、
前記第1の加熱工程後に、前記炭化珪素基板を窒素原子またはリン原子を含む気体雰囲気下において加熱する第2の加熱工程と、
前記第2の加熱工程後に、前記炭化珪素基板を第1の不活性ガス雰囲気下において加熱する第3の加熱工程とを備え、
前記第1の加熱工程から前記第3の加熱工程において、前記炭化珪素基板が1350℃で保持される、炭化珪素半導体装置の製造方法。 - 前記第1の加熱工程後であって、前記第2の加熱工程前に、前記酸素を第2の不活性ガスによって置換する工程をさらに備えた、請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記第1の不活性ガスは、アルゴンガス、ヘリウムガスおよび窒素ガスのいずれかである、請求項1または2に記載の炭化珪素半導体装置の製造方法。
- 前記窒素原子を含む前記気体は、一酸化窒素、一酸化二窒素、二酸化窒素およびアンモニアのいずれかである、請求項1〜3のいずれか1項に記載の炭化珪素半導体装置の製造方法。
- 前記リン原子を含む前記気体は、塩化ホスホリル(POCl3)である、請求項1〜4のいずれか1項に記載の炭化珪素半導体装置の製造方法。
- 炭化珪素基板と、
前記炭化珪素基板に接して配置された酸化膜と、
前記炭化珪素基板との間に前記酸化膜を挟むように前記酸化膜と接して配置されたゲート電極と、
前記炭化珪素基板に接して配置された第1の電極および第2の電極とを備えた炭化珪素半導体装置であって、
前記第1の電極および前記第2の電極は、前記ゲート電極に印加されるゲート電圧によって前記第1の電極および前記第2の電極の間に流れる電流が制御可能に構成されており、
初めて測定される前記炭化珪素半導体装置の第1の閾値電圧と、
1000時間継続的に前記炭化珪素半導体装置に対してストレス印加した後に測定される前記炭化珪素半導体装置の第2の閾値電圧との差が±0.2V以内であり、
前記ストレス印加とは、前記第1の電極の電圧が0Vでありかつ前記第2の電極の電圧が0Vの状態で、前記ゲート電極に対して−5Vから+15Vまで変化する45kHzの前記ゲート電圧を印加することである、炭化珪素半導体装置。 - 前記第1の閾値電圧と、
前記炭化珪素半導体装置に対して前記ストレス印加を開始した後、1000時間までの任意の時間経過後に測定される第3の閾値電圧との差が±0.2V以内である、請求項6に記載の炭化珪素半導体装置。 - 前記ストレス印加が150℃の温度下で行われる、請求項6または7に記載の炭化珪素半導体装置。
- 前記ストレス印加が室温および150℃のいずれの温度で行われても前記第1の閾値電圧と前記第2の閾値電圧との差が±0.2V以内である、請求項6または7に記載の炭化珪素半導体装置。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
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JP2012174724A JP6068042B2 (ja) | 2012-08-07 | 2012-08-07 | 炭化珪素半導体装置およびその製造方法 |
PCT/JP2013/066704 WO2014024568A1 (ja) | 2012-08-07 | 2013-06-18 | 炭化珪素半導体装置およびその製造方法 |
EP13827817.1A EP2884524A4 (en) | 2012-08-07 | 2013-06-18 | SILICON CARBIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR |
CN201380036253.8A CN104428878B (zh) | 2012-08-07 | 2013-06-18 | 碳化硅半导体器件及其制造方法 |
CN201610804072.0A CN106449380A (zh) | 2012-08-07 | 2013-06-18 | 碳化硅半导体器件 |
US13/925,339 US9147731B2 (en) | 2012-08-07 | 2013-06-24 | Silicon carbide semiconductor device and method for manufacturing same |
US14/803,868 US9425263B2 (en) | 2012-08-07 | 2015-07-20 | Silicon carbide semiconductor device and method for manufacturing same |
US15/210,639 US9627488B2 (en) | 2012-08-07 | 2016-07-14 | Silicon carbide semiconductor device and method for manufacturing same |
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WO2015137420A1 (ja) | 2014-03-11 | 2015-09-17 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 |
FR3030781B1 (fr) | 2014-12-19 | 2016-12-16 | Commissariat Energie Atomique | Procede de realisation d'un detecteur de neutrons et detecteur de neutrons |
CN106611705B (zh) * | 2015-10-21 | 2019-07-12 | 国网智能电网研究院 | 一种碳化硅表面低界面态氧化层的制备方法 |
CN108257861B (zh) * | 2016-12-28 | 2021-09-21 | 全球能源互联网研究院 | 一种栅氧化层的制备方法及mos功率器件 |
CN109755113B (zh) * | 2017-11-01 | 2021-08-10 | 天津环鑫科技发展有限公司 | 一种调节扩散气氛的一次扩散工艺 |
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JP4016928B2 (ja) * | 2003-10-09 | 2007-12-05 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
JP2007066944A (ja) * | 2005-08-29 | 2007-03-15 | Nissan Motor Co Ltd | 炭化珪素半導体装置及びその製造方法 |
US7727904B2 (en) * | 2005-09-16 | 2010-06-01 | Cree, Inc. | Methods of forming SiC MOSFETs with high inversion layer mobility |
JP2007201336A (ja) * | 2006-01-30 | 2007-08-09 | Hitachi Ltd | 半導体積層体の形成方法 |
WO2007086196A1 (ja) * | 2006-01-30 | 2007-08-02 | Sumitomo Electric Industries, Ltd. | 炭化珪素半導体装置の製造方法 |
JP5157843B2 (ja) | 2007-12-04 | 2013-03-06 | 住友電気工業株式会社 | 炭化ケイ素半導体装置およびその製造方法 |
EP2515336B1 (en) * | 2009-12-16 | 2016-03-02 | National University Corporation Nara Institute of Science and Technology | Sic semiconductor element manufacturing method |
EP2546867A4 (en) * | 2010-03-12 | 2014-07-09 | Sumitomo Electric Industries | SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR |
JP5699628B2 (ja) * | 2010-07-26 | 2015-04-15 | 住友電気工業株式会社 | 半導体装置 |
JP5694119B2 (ja) * | 2010-11-25 | 2015-04-01 | 三菱電機株式会社 | 炭化珪素半導体装置 |
JP5673113B2 (ja) * | 2011-01-12 | 2015-02-18 | 住友電気工業株式会社 | 半導体装置 |
US9478616B2 (en) * | 2011-03-03 | 2016-10-25 | Cree, Inc. | Semiconductor device having high performance channel |
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EP2884524A1 (en) | 2015-06-17 |
WO2014024568A1 (ja) | 2014-02-13 |
EP2884524A4 (en) | 2016-04-20 |
US20140042453A1 (en) | 2014-02-13 |
US9425263B2 (en) | 2016-08-23 |
US20150325657A1 (en) | 2015-11-12 |
CN106449380A (zh) | 2017-02-22 |
CN104428878A (zh) | 2015-03-18 |
CN104428878B (zh) | 2017-03-08 |
JP2014036032A (ja) | 2014-02-24 |
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