JP5673113B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5673113B2 JP5673113B2 JP2011003545A JP2011003545A JP5673113B2 JP 5673113 B2 JP5673113 B2 JP 5673113B2 JP 2011003545 A JP2011003545 A JP 2011003545A JP 2011003545 A JP2011003545 A JP 2011003545A JP 5673113 B2 JP5673113 B2 JP 5673113B2
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- 239000004065 semiconductor Substances 0.000 title claims description 59
- 210000000746 body region Anatomy 0.000 claims description 84
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 59
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 48
- 239000012535 impurity Substances 0.000 claims description 37
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 229910010038 TiAl Inorganic materials 0.000 claims description 3
- 229910005883 NiSi Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 84
- 238000004519 manufacturing process Methods 0.000 description 33
- 238000000034 method Methods 0.000 description 22
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 16
- 238000000137 annealing Methods 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 238000005468 ion implantation Methods 0.000 description 12
- 239000007789 gas Substances 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 230000009467 reduction Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 229910021334 nickel silicide Inorganic materials 0.000 description 5
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
- H01L21/047—Making n or p doped regions or layers, e.g. using diffusion using ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
Description
まず、本発明の一実施の形態である実施の形態1について説明する。図1を参照して、本実施の形態における半導体装置であるMOSFET100は、導電型がn型である炭化珪素基板1と、炭化珪素からなり導電型がn型であるバッファ層2と、炭化珪素からなり導電型がn型のドリフト層3と、導電型がp型の一対のp型ボディ領域4と、導電型がn型のn+領域5とを備えている。
次に、本発明の他の実施の形態である実施の形態2について説明する。実施の形態2における半導体装置であるIGBT200は、上記実施の形態1における炭化珪素基板の面方位、p型ボディ領域のp型不純物密度、およびp+領域の省略に関して上記実施の形態1におけるMOSFET100と同様の構造を有することにより、同様の効果を奏する。
Claims (10)
- {0001}面に対するオフ角が50°以上65°以下である主面を有する炭化珪素基板と、
前記主面上に形成されたエピタキシャル成長層と、
前記エピタキシャル成長層上に接触して形成された絶縁膜と、
前記エピタキシャル成長層において前記絶縁膜と接触する領域を含むように形成され、導電型がp型であるp型ボディ領域と、
前記p型ボディ領域内において前記エピタキシャル成長層の前記炭化珪素基板とは反対側の主面を含むように形成され、導電型がn型であるn型コンタクト領域と、
前記エピタキシャル成長層上に前記n型コンタクト領域と接触するように形成されたコンタクト電極とを備え、
前記p型ボディ領域におけるp型不純物密度は5×1017cm−3以上であり、
前記コンタクト電極と前記p型ボディ領域とは直接接触し、前記コンタクト電極と前記n型コンタクト領域との接触抵抗は1×10 −4 Ωcm 2 以下である、半導体装置。 - 前記主面のオフ方位と<01−10>方向とのなす角は5°以下となっている、請求項1に記載の半導体装置。
- 前記主面の、<01−10>方向における{03−38}面に対するオフ角は−3°以上5°以下である、請求項2に記載の半導体装置。
- 前記主面のオフ方位と<−2110>方向とのなす角は5°以下となっている、請求項1に記載の半導体装置。
- 前記主面は、前記炭化珪素基板を構成する炭化珪素のカーボン面側の面である、請求項1〜請求項4のいずれか1項に記載の半導体装置。
- 前記p型ボディ領域におけるp型不純物密度は1×1020cm−3以下である、請求項1〜請求項5のいずれか1項に記載の半導体装置。
- 前記p型ボディ領域におけるp型不純物密度は5×1018cm−3以下である、請求項1〜請求項5のいずれか1項に記載の半導体装置。
- 前記コンタクト電極は、Ti、Al、SiおよびNiからなる群から選択される少なくとも1種の元素を含有している、請求項1〜請求項7のいずれか1項に記載の半導体装置。
- 前記コンタクト電極は、TiAlSi、TiAlNi、TiAlまたはNiSiからなっている、請求項8に記載の半導体装置。
- 前記コンタクト電極と前記p型ボディ領域との接触抵抗は1Ωcm2以下である、請求項1〜請求項9のいずれか1項に記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011003545A JP5673113B2 (ja) | 2011-01-12 | 2011-01-12 | 半導体装置 |
US13/348,420 US20120175638A1 (en) | 2011-01-12 | 2012-01-11 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011003545A JP5673113B2 (ja) | 2011-01-12 | 2011-01-12 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2012146798A JP2012146798A (ja) | 2012-08-02 |
JP5673113B2 true JP5673113B2 (ja) | 2015-02-18 |
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JP2011003545A Active JP5673113B2 (ja) | 2011-01-12 | 2011-01-12 | 半導体装置 |
Country Status (2)
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US (1) | US20120175638A1 (ja) |
JP (1) | JP5673113B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5811829B2 (ja) | 2011-12-22 | 2015-11-11 | 住友電気工業株式会社 | 半導体装置の製造方法 |
JP6068042B2 (ja) * | 2012-08-07 | 2017-01-25 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4581270B2 (ja) * | 2001-03-05 | 2010-11-17 | 住友電気工業株式会社 | SiC半導体のイオン注入層及びその製造方法 |
JP2003031808A (ja) * | 2001-07-16 | 2003-01-31 | Nissan Motor Co Ltd | 半導体装置およびその製造方法 |
US6940110B2 (en) * | 2002-11-29 | 2005-09-06 | Matsushita Electric Industrial Co., Ltd. | SiC-MISFET and method for fabricating the same |
JP4393144B2 (ja) * | 2003-09-09 | 2010-01-06 | 株式会社東芝 | 電力用半導体装置 |
JP2007013058A (ja) * | 2005-07-04 | 2007-01-18 | Toshiba Corp | 半導体装置 |
US8138504B2 (en) * | 2006-11-10 | 2012-03-20 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device and method of manufacturing the same |
JP2009043880A (ja) * | 2007-08-08 | 2009-02-26 | Panasonic Corp | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 |
JP5157843B2 (ja) * | 2007-12-04 | 2013-03-06 | 住友電気工業株式会社 | 炭化ケイ素半導体装置およびその製造方法 |
EP2280417B1 (en) * | 2008-04-15 | 2015-07-22 | Sumitomo Electric Industries, Ltd. | Semiconductor device and method for manufacturing the same |
CN102150270B (zh) * | 2009-03-27 | 2014-04-09 | 住友电气工业株式会社 | Mosfet和用于制造mosfet的方法 |
-
2011
- 2011-01-12 JP JP2011003545A patent/JP5673113B2/ja active Active
-
2012
- 2012-01-11 US US13/348,420 patent/US20120175638A1/en not_active Abandoned
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JP2012146798A (ja) | 2012-08-02 |
US20120175638A1 (en) | 2012-07-12 |
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