JP6070790B2 - 半導体装置の製造方法および半導体装置 - Google Patents
半導体装置の製造方法および半導体装置 Download PDFInfo
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- JP6070790B2 JP6070790B2 JP2015161088A JP2015161088A JP6070790B2 JP 6070790 B2 JP6070790 B2 JP 6070790B2 JP 2015161088 A JP2015161088 A JP 2015161088A JP 2015161088 A JP2015161088 A JP 2015161088A JP 6070790 B2 JP6070790 B2 JP 6070790B2
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- 239000004065 semiconductor Substances 0.000 title claims description 67
- 238000004519 manufacturing process Methods 0.000 title description 51
- 239000000758 substrate Substances 0.000 claims description 72
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 46
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 46
- 210000000746 body region Anatomy 0.000 claims description 24
- 238000000034 method Methods 0.000 description 22
- 238000010438 heat treatment Methods 0.000 description 18
- 239000012535 impurity Substances 0.000 description 18
- 239000010410 layer Substances 0.000 description 13
- 239000011229 interlayer Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 125000004433 nitrogen atom Chemical group N* 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 230000002040 relaxant effect Effects 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000001747 exhibiting effect Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- LKTZODAHLMBGLG-UHFFFAOYSA-N alumanylidynesilicon;$l^{2}-alumanylidenesilylidenealuminum Chemical compound [Si]#[Al].[Si]#[Al].[Al]=[Si]=[Al] LKTZODAHLMBGLG-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- Formation Of Insulating Films (AREA)
Description
Claims (2)
- 炭化珪素からなり、一方の主表面側に開口し、底面および壁面を含むトレンチが形成された基板と、
前記トレンチの表面を覆うように形成された酸化膜とを備え、
前記酸化膜の膜厚の最大値は、前記膜厚の最小値の2倍以下の値であり、
前記底面を含む領域に形成された酸化膜の膜厚に対する前記壁面を含む領域に形成された酸化膜の膜厚の比率が60パーセント以上であり、
前記底面は(000−1)面であり、前記壁面は(0−33−8)面である、半導体装置。 - 前記基板は、第1導電型のドリフト領域と、前記ドリフト領域上に形成された第2導電型のボディ領域と、前記ボディ領域上に形成された第1導電型のソース領域とを含み、
前記トレンチの底面は前記ドリフト領域に位置するように形成され、前記トレンチの壁面は前記ドリフト領域、前記ボディ領域、および前記ソース領域に亘るように形成され、
前記酸化膜は、前記トレンチの前記壁面上において、前記ドリフト領域、前記ボディ領域、および前記ソース領域に直接接するように形成され、
前記半導体装置は、
前記酸化膜に接触するように前記トレンチ内に形成されたゲート電極と、
前記基板の他方の主表面上に形成されたドレイン電極とをさらに備える、請求項1に記載の半導体装置。
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JP2016006900A JP2016006900A (ja) | 2016-01-14 |
JP6070790B2 true JP6070790B2 (ja) | 2017-02-01 |
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Families Citing this family (1)
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CN114600250A (zh) * | 2019-10-29 | 2022-06-07 | 住友电气工业株式会社 | 碳化硅半导体装置及碳化硅半导体装置的制造方法 |
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JP4843854B2 (ja) * | 2001-03-05 | 2011-12-21 | 住友電気工業株式会社 | Mosデバイス |
JP5017823B2 (ja) * | 2005-09-12 | 2012-09-05 | 富士電機株式会社 | 半導体素子の製造方法 |
JP5017855B2 (ja) * | 2005-12-14 | 2012-09-05 | 富士電機株式会社 | 半導体装置の製造方法 |
JP5437592B2 (ja) * | 2008-06-02 | 2014-03-12 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
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