JP5482107B2 - 炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置の製造方法 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 69
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 67
- 238000000034 method Methods 0.000 title claims description 43
- 239000004065 semiconductor Substances 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 133
- 229910052799 carbon Inorganic materials 0.000 claims description 118
- 229910052751 metal Inorganic materials 0.000 claims description 97
- 239000002184 metal Substances 0.000 claims description 97
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 37
- 229910052710 silicon Inorganic materials 0.000 claims description 37
- 239000010703 silicon Substances 0.000 claims description 37
- 238000005224 laser annealing Methods 0.000 claims description 33
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 239000011368 organic material Substances 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 239000002041 carbon nanotube Substances 0.000 claims description 7
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 7
- 229910021389 graphene Inorganic materials 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- 239000010955 niobium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 238000010000 carbonizing Methods 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims description 2
- LGRLWUINFJPLSH-UHFFFAOYSA-N methanide Chemical compound [CH3-] LGRLWUINFJPLSH-UHFFFAOYSA-N 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 178
- 239000010408 film Substances 0.000 description 40
- 239000000758 substrate Substances 0.000 description 32
- 230000008569 process Effects 0.000 description 22
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- 230000015572 biosynthetic process Effects 0.000 description 14
- 239000012535 impurity Substances 0.000 description 12
- 229910021332 silicide Inorganic materials 0.000 description 12
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 11
- 230000031700 light absorption Effects 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
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Description
本発明の第1実施形態について説明する。本実施形態では、ショットキーバリアダイオード(以下、SBDという)を備えるSiC半導体装置に対して本発明の一実施形態である製造方法を適用した場合について説明する。図1は、本実施形態にかかるSiC半導体装置の断面図である。
本発明の第2実施形態について説明する。本実施形態は、第1実施形態に対してオーミック電極形成工程を変更したものであり、その他に関しては第1実施形態と同様であるため、異なる部分についてのみ説明する。
本発明の第3実施形態について説明する。本実施形態も、第1実施形態に対してオーミック電極形成工程を変更したものであり、その他に関しては第1実施形態と同様であるため、異なる部分についてのみ説明する。
本発明の第4実施形態について説明する。本実施形態も、第1実施形態に対してオーミック電極形成工程を変更したものであり、その他に関しては第1実施形態と同様であるため、異なる部分についてのみ説明する。
本発明の第5実施形態について説明する。本実施形態も、第3実施形態に対してオーミック電極形成工程を変更したものであり、その他に関しては第3実施形態と同様であるため、異なる部分についてのみ説明する。
上記各実施形態では、SiC半導体装置としてSBDが備えられた構造のものを例に挙げ、SBDの裏面に備えられるオーミック電極5のコンタクト抵抗の低抵抗化を実現するために本発明を適用する場合について説明した。しかしながら、これは単なる一例であり、オーミック電極が形成されるようものであれば、他の半導体素子が備えられるSiC半導体装置の製造方法に対しても本発明を適用することができる。
1b 裏面
2 n-型ドリフト層
3 絶縁膜
3a 開口部
4 ショットキー電極
5 オーミック電極
10 SBD
13 有機膜
14 カーボン層
15 金属層
16 シリコン層
Claims (13)
- 炭化珪素(1)の一面(1b)に対し、該一面(1b)とオーミック接触させられるオーミック電極(5)を形成するオーミック電極形成工程を含む炭化珪素半導体装置の製造方法であって、
前記炭化珪素(1)の一面(1b)に対してカーボン層(14)を形成する工程と、
前記カーボン層(14)を挟んで前記炭化珪素(1)とは反対側に前記オーミック電極(5)を形成するための金属層(15)を形成する工程と、
前記金属層(15)側からレーザ光を照射することでレーザアニールを行い、前記カーボン層(14)を構成する炭素と前記金属層(15)を構成する金属とを反応させて金属カーバイドを形成し、前記金属層(15)の残部および前記金属カーバイドを有する前記オーミック電極(5)を形成する工程と、を含んでいることを特徴とする炭化珪素半導体装置の製造方法。 - 前記カーボン層(14)を形成する工程では、前記炭化珪素(1)の一面(1b)に対して有機材料を含有する有機膜(13)を成膜する工程と、前記有機膜(13)を炭化させて前記カーボン層(14)を形成する工程と、を含んでいることを特徴とする請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記有機膜(13)を成膜する工程では、前記有機膜(13)としてレジストを用い、
前記有機膜(13)を炭化させて前記カーボン層(14)を形成する工程では、前記レジストをレーザアニールすることで炭化させることを特徴とする請求項2に記載の炭化珪素半導体装置の製造方法。 - 前記カーボン層(14)を形成する工程では、スパッタによって前記カーボン層(14)を形成することを特徴とする請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記カーボン層(14)を形成する工程では、前記炭化珪素(1)の一面(1b)をレーザアニールすることでシリコン抜けを起こさせて炭素の原子比率がシリコンの原子比率よりも高くなるようにすることで前記カーボン層(14)を形成することを特徴とする請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記カーボン層(14)を形成する工程では、前記炭化珪素(1)の一面(1b)に対してイオン注入を行って原子間の結合を壊した後で、前記レーザアニールによるシリコン抜けを行って前記カーボン層(14)を形成することを特徴とする請求項5に記載の炭化珪素半導体装置の製造方法。
- 前記カーボン層(14)を形成する工程では、前記炭化珪素(1)の一面(1b)に前記カーボン層(14)としてカーボンナノチューブを形成する工程を含んでいることを特徴とする請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記カーボン層(14)を形成する工程では、前記炭化珪素(1)の一面(1b)に前記カーボン層(14)としてグラフェンを形成する工程を含んでいることを特徴とする請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記カーボン層(14)を形成する工程の後、前記カーボン層(14)に凹凸を形成する工程を含み、前記カーボン層(14)に凹凸を形成してから、前記金属層(15)を形成する工程を行うことを特徴とする請求項1ないし8のいずれか1つに記載の炭化珪素半導体装置の製造方法。
- 前記カーボン膜(14)の表面にシリコン層(16)を成膜する工程を含み、
前記シリコン層(16)を成膜する工程の後で、前記金属層(15)を形成する工程を行うことを特徴とする請求項1ないし9のいずれか1つに記載の炭化珪素半導体装置の製造方法。 - 炭化珪素(1)の一面(1b)に対し、該一面(1b)とオーミック接触させられるオーミック電極(5)を形成するオーミック電極形成工程を含む炭化珪素半導体装置の製造方法であって、
前記炭化珪素(1)の一面(1b)に対して有機材料を含有する有機膜(13)を成膜する工程と、
前記有機膜(13)を挟んで前記炭化珪素(1)とは反対側に前記オーミック電極(5)を形成するための金属層(15)を形成する工程と、
前記金属層(15)側からレーザ光を照射することでレーザアニールを行い、前記有機材料(13)に含まれる炭素と前記金属層(15)を構成する金属とを反応させて金属カーバイドを形成し、前記金属層(15)の残部および前記金属カーバイドを有する前記オーミック電極(5)を形成する工程と、を含んでいることを特徴とする炭化珪素半導体装置の製造方法。 - 前記金属層(15)を形成する工程では、4A、5Aもしくは6A族のいずれかの金属にて前記金属層(15)を形成することを特徴とする請求項1ないし11のいずれか1つに記載の炭化珪素半導体装置の製造方法。
- 前記4A、5Aもしくは6A族のいずれかの金属として、ニッケル、チタン、タンタル、モリブデン、タングステン、ニオブ、ハフニウムのいずれかを用いることを特徴とする請求項12に記載の炭化珪素半導体装置の製造方法。
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