JP3914226B2 - 高耐圧半導体装置 - Google Patents
高耐圧半導体装置 Download PDFInfo
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- JP3914226B2 JP3914226B2 JP2004285245A JP2004285245A JP3914226B2 JP 3914226 B2 JP3914226 B2 JP 3914226B2 JP 2004285245 A JP2004285245 A JP 2004285245A JP 2004285245 A JP2004285245 A JP 2004285245A JP 3914226 B2 JP3914226 B2 JP 3914226B2
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- 239000004065 semiconductor Substances 0.000 title claims description 34
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 76
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 75
- 239000000758 substrate Substances 0.000 claims description 33
- 230000015556 catabolic process Effects 0.000 claims description 22
- 230000005684 electric field Effects 0.000 description 15
- 230000000694 effects Effects 0.000 description 7
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 6
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 108091006146 Channels Proteins 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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Description
SiC素子の基礎と応用、荒井和雄編、ページ165〜168
本願において開示される発明のうち、代表的なものの概要を簡単に説明すれば下記の通りである。
本発明によれば、必要以上に大きな接合終端領域を形成せずに、デバイス終端部における電界集中を緩和できるので、無駄な接合終端領域を減らすことができる。無駄な接合終端領域が減ることにより、コストは下がる。
図1は、本発明の第1の実施形態に係る高耐圧半導体装置を示す平面図である。また、図2は、図1の平面図の矢視A−A’断面図である。
図5は、本発明の第3の実施形態に係る高耐圧半導体装置を示す平面図である。また、図6は、図5の平面図の矢視B−B’断面図である。なお、以下の図において、既出の図と対応する部分には既出の図と同一符号を付してあり、詳細な説明は省略する。
図7は、本発明の第2の実施形態に係る高耐圧半導体装置を断面図である。
Claims (6)
- 法線の方向が<0001>方向および<000−1>方向とは異なる主面を備えた炭化珪素基板と、
前記炭化珪素基板の前記主面上に形成された第1導電型の炭化珪素層と、
前記炭化珪素層の表面に形成され、前記<0001>方向および前記<000−1>方向に対する前記主面のオフ角方向の幅の方が、前記オフ角方向と反対側の幅よりも広い第2導電型の半導体層を含む接合終端領域と、
前記炭化珪素層に設けられた第1の電極と、
前記主面と反対側の前記炭化珪素基板の面に設けられた第2の電極と
を具備し、
前記第1の電極は、その端部が前記接合終端領域上に位置するように前記炭化珪素層に設けられていることを特徴とする高耐圧半導体装置。 - 前記炭化珪素層と前記第1の電極とはショットキー接触されていることを特徴とする請求項1に記載の高耐圧半導体装置。
- 前記炭化珪素基板は第一導電型であり、前記炭化珪素層の表面に選択的に形成された第2導電型のウェルと、該ウェルの表面に選択的に形成された第1導電型のソース層と、該ソース層と前記炭化珪素層とで挟まれた前記ウェル上にゲート絶縁膜を介して設けられたゲート電極とをさらに具備してなることを特徴とする請求項1に記載の高耐圧半導体装置。
- 前記炭化珪素基板は第二導電型であり、前記炭化珪素層の表面に選択的に形成された第2導電型のウェルと、該ウェルの表面に選択的に形成された第1導電型のソース層と、該ソース層と前記炭化珪素層とで挟まれた前記ウェル上にゲート絶縁膜を介して設けられたゲート電極とをさらに具備してなることを特徴とする請求項1に記載の高耐圧半導体装置。
- 前記炭化珪素層は、エピタキシャル成長層であることを特徴とする請求項1ないし4のいずれか1項に記載の高耐圧半導体装置。
- 前記半導体層は、リサーフ層であることを特徴とする請求項1ないし4のいずれか1項に記載の高耐圧半導体装置
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004285245A JP3914226B2 (ja) | 2004-09-29 | 2004-09-29 | 高耐圧半導体装置 |
US11/234,238 US7649213B2 (en) | 2004-09-29 | 2005-09-26 | Semiconductor device |
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004285245A JP3914226B2 (ja) | 2004-09-29 | 2004-09-29 | 高耐圧半導体装置 |
Publications (2)
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JP2006100593A JP2006100593A (ja) | 2006-04-13 |
JP3914226B2 true JP3914226B2 (ja) | 2007-05-16 |
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JP2004285245A Expired - Fee Related JP3914226B2 (ja) | 2004-09-29 | 2004-09-29 | 高耐圧半導体装置 |
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US (1) | US7649213B2 (ja) |
JP (1) | JP3914226B2 (ja) |
Families Citing this family (71)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7812441B2 (en) | 2004-10-21 | 2010-10-12 | Siliconix Technology C.V. | Schottky diode with improved surge capability |
US7394158B2 (en) | 2004-10-21 | 2008-07-01 | Siliconix Technology C.V. | Solderable top metal for SiC device |
US7834376B2 (en) | 2005-03-04 | 2010-11-16 | Siliconix Technology C. V. | Power semiconductor switch |
US9419092B2 (en) | 2005-03-04 | 2016-08-16 | Vishay-Siliconix | Termination for SiC trench devices |
US8368165B2 (en) | 2005-10-20 | 2013-02-05 | Siliconix Technology C. V. | Silicon carbide Schottky diode |
US7274083B1 (en) * | 2006-05-02 | 2007-09-25 | Semisouth Laboratories, Inc. | Semiconductor device with surge current protection and method of making the same |
JP4189415B2 (ja) * | 2006-06-30 | 2008-12-03 | 株式会社東芝 | 半導体装置 |
JP4921880B2 (ja) * | 2006-07-28 | 2012-04-25 | 株式会社東芝 | 高耐圧半導体装置 |
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