JP6549291B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6549291B2 JP6549291B2 JP2018130907A JP2018130907A JP6549291B2 JP 6549291 B2 JP6549291 B2 JP 6549291B2 JP 2018130907 A JP2018130907 A JP 2018130907A JP 2018130907 A JP2018130907 A JP 2018130907A JP 6549291 B2 JP6549291 B2 JP 6549291B2
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- 239000004065 semiconductor Substances 0.000 title claims description 38
- 239000012535 impurity Substances 0.000 claims description 101
- 230000001154 acute effect Effects 0.000 claims description 13
- 229910010271 silicon carbide Inorganic materials 0.000 description 132
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 118
- 239000010410 layer Substances 0.000 description 77
- 238000005468 ion implantation Methods 0.000 description 49
- 229910052782 aluminium Inorganic materials 0.000 description 37
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 35
- 210000000746 body region Anatomy 0.000 description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 27
- 230000000694 effects Effects 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 15
- 229910052757 nitrogen Inorganic materials 0.000 description 14
- 230000001133 acceleration Effects 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 230000005684 electric field Effects 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 230000005465 channeling Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 7
- 150000002500 ions Chemical group 0.000 description 7
- 230000009471 action Effects 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 150000001721 carbon Chemical group 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- -1 Aluminum ions Chemical class 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 238000004645 scanning capacitance microscopy Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 241000341910 Vesta Species 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
Description
本実施形態の半導体装置の製造方法は、SiC層に<10−11>±1度、<10−1−1>±1度、<10−12>±1度、又は、<10−1−2>±1度の方向で不純物をイオン注入する。また、SiC層に<0001>±1度、又は、<000−1>±1度の方向でアルミニウムをイオン注入する。
本実施形態の半導体装置の製造方法は、MOSFETのボディ領域の形成に、斜めイオン注入を用いる点と、MOSFETがトレンチゲート型ではなく、プレーナゲート型である点で、第1の実施形態と異なっている。以下、第1の実施形態と重複する内容については記述を省略する。
12 ソース電極(第1の電極)
14 ドレイン電極(第2の電極)
26 n−型の第2のドリフト領域(第1のSiC領域)
27 n−型のドリフト領域(第1のSiC領域)
28 p−型の低濃度ピラー領域(第4のSiC領域)
32 ボディ領域32(第4のSiC領域)
42 p−型のリサーフ領域(第2のSiC領域)
44 端部領域(第3のSiC領域)
46 角部
100 MOSFET(半導体装置)
200 MOSFET(半導体装置)
Claims (5)
- 第1の面と第2の面を有するSiC層の一部である素子領域と、
前記SiC層の一部であり、前記素子領域を囲む終端領域と、
前記第1の面に設けられた第1の電極と、
前記第2の面に設けられた第2の電極と、
前記SiC層内に設けられた第1導電型の第1のSiC領域と、
前記終端領域内の前記第1のSiC領域と前記第1の面との間に設けられ、前記第1の電極と電気的に接続され、前記素子領域を囲む第2導電型の第2のSiC領域と、
前記第2のSiC領域と前記第2の面との間に設けられ、前記第2の面側の角部と前記第2のSiC領域との間に前記第1のSiC領域の一部を挟む第2導電型の第3のSiC領域と、
前記第1のSiC領域の一部との間に、前記第3のSiC領域を挟んで前記第3のSiC領域に接して設けられ、前記第3のSiC領域よりも第2導電型の不純物濃度の高い第4のSiC領域と、
を備える半導体装置。 - 前記第4のSiC領域の第2導電型の不純物濃度は、前記第3のSiC領域の第2導電型の不純物濃度の2倍である請求項1記載の半導体装置。
- 第1の面と第2の面を有するSiC層の一部である素子領域と、
前記SiC層の一部であり、前記素子領域を囲む終端領域と、
前記第1の面に設けられた第1の電極と、
前記第2の面に設けられた第2の電極と、
前記SiC層内に設けられた第1導電型の第1のSiC領域と、
前記終端領域内の前記第1のSiC領域と前記第1の面との間に設けられ、前記第1の電極と電気的に接続され、前記素子領域を囲む第2導電型の第2のSiC領域と、
前記第2のSiC領域と前記第2の面との間に設けられ、前記第2の面側の角部と前記第2のSiC領域との間に前記第1のSiC領域の一部を挟む第2導電型の第3のSiC領域と、を備え、
前記角部は鋭角を有する半導体装置。 - 前記鋭角は80度以下である請求項3記載の半導体装置。
- 前記第1のSiC領域の一部との間に、前記第3のSiC領域を挟んで前記第3のSiC領域に接して設けられ、前記第3のSiC領域よりも第2導電型の不純物濃度の高い第4のSiC領域と、を更に備える請求項3又は請求項4記載の半導体装置。
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JP2018130907A JP6549291B2 (ja) | 2018-07-10 | 2018-07-10 | 半導体装置 |
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JP2018130907A JP6549291B2 (ja) | 2018-07-10 | 2018-07-10 | 半導体装置 |
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JP2015180505A Division JP6479615B2 (ja) | 2015-09-14 | 2015-09-14 | 半導体装置の製造方法 |
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JP2018190994A JP2018190994A (ja) | 2018-11-29 |
JP6549291B2 true JP6549291B2 (ja) | 2019-07-24 |
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Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3617507B2 (ja) * | 2002-07-01 | 2005-02-09 | 日産自動車株式会社 | 炭化珪素半導体装置の製造方法、及びその製造方法によって製造される炭化珪素半導体装置 |
JP3914226B2 (ja) * | 2004-09-29 | 2007-05-16 | 株式会社東芝 | 高耐圧半導体装置 |
JP4189415B2 (ja) * | 2006-06-30 | 2008-12-03 | 株式会社東芝 | 半導体装置 |
JP2008227239A (ja) * | 2007-03-14 | 2008-09-25 | Toyota Central R&D Labs Inc | 半導体装置 |
JP5939127B2 (ja) * | 2012-10-22 | 2016-06-22 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
JP6224454B2 (ja) * | 2013-12-27 | 2017-11-01 | 株式会社豊田中央研究所 | 縦型半導体装置 |
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