JP5865016B2 - トレンチ型ショットキー接合型半導体装置及びその製造方法 - Google Patents
トレンチ型ショットキー接合型半導体装置及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 66
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 26
- 239000012535 impurity Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims 2
- 230000004888 barrier function Effects 0.000 description 33
- 230000015556 catabolic process Effects 0.000 description 29
- 230000005684 electric field Effects 0.000 description 25
- 238000010586 diagram Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000004364 calculation method Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- UNRFQJSWBQGLDR-UHFFFAOYSA-N methane trihydrofluoride Chemical compound C.F.F.F UNRFQJSWBQGLDR-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
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- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
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- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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- H01L29/6609—Diodes
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
Description
Claims (14)
- 不純物を含み第1導電型を有する炭化珪素基板と、
前記基板上に形成され、前記基板より不純物濃度の低い第1導電型のドリフト層と、
前記ドリフト層表面に形成され、底面と側面をもつ複数個の第1トレンチ群と、
前記第1トレンチの内壁部に接するように形成された第2導電型不純物領域と、
前記第1トレンチ群の間に挟まれたショットキー接合領域と、
前記ドリフト層表面に接するように形成された第1電極と、
前記基板の裏面に形成された第2電極を具備するショットキー接合型半導体装置の製造方法であって、
前記第1トレンチの底面の中央よりも周辺を深く掘ってサブトレンチを形成し、
前記第1トレンチの内壁部へ、第2導電型の不純物を基板表面に対して垂直にイオン注入して前記第2導電型不純物領域を形成することを特徴とするショットキー接合型半導体装置の製造方法。 - 前記第1トレンチを、前記ドリフト層表面に互いに並列に並ぶように形成することを特徴とする請求項1に記載のショットキー接合型半導体装置の製造方法。
- 前記第1トレンチを前記ドリフト層表面に幅1μm以下に開口することを特徴とする請求項1に記載のショットキーダイオードの製造方法。
- 前記第1トレンチの底面の周辺の深さを、トレンチ7底面の中央の深さよりも200nm以上深く形成することを特徴とする請求項1に記載のショットキー接合型半導体装置の製造方法。
- 前記第1トレンチの前記ドリフト層表面における開口幅よりもトレンチの底面の幅を小さく形成することを特徴とする請求項1に記載のショットキー接合型半導体装置の製造方法。
- 前記第1トレンチの内壁部に接するように形成された前記第2導電型不純物領域を、
トレンチの底面の中央での接合位置よりもトレンチの底面の周辺での接合位置が深くなるように形成することを特徴とする請求項1に記載のショットキー接合型半導体装置の製造方法。 - 前記第1トレンチの前記ドリフト層表面における開口幅をLpnとし、前記第1トレンチの間に挟まれたショットキー接合領域の幅をLSBDとすると、Lpn+LSBDが2μm以下となるように形成することを特徴とする請求項1に記載のショットキー接合型半導体装置の製造方法。
- 半導体装置の終端部において、前記第1トレンチを取り囲むように、前記第1トレンチよりもドリフト層表面における開口幅が広い第2のトレンチを配置し、前記第2のトレンチの底面の周辺の深さと前記第2のトレンチの底面の中央の深さを等しく形成することを特徴とする請求項1に記載のショットキー接合型半導体装置の製造方法。
- 第1導電型の炭化珪素基板上に第1導電型の炭化珪素で構成されたドリフト層を形成し、
前記ドリフト層上に酸化膜を形成し、
前記酸化膜に複数の開口部を形成し、
前記酸化膜をマスクとして、第1トレンチと、前記第1トレンチの底面の中央よりも周辺を深く掘ったサブトレンチと、を形成し、
前記酸化膜をマスクとして前記第1トレンチの内壁部へ第2導電型の不純物を基板表面に対して垂直にイオン注入して第2導電型不純物領域を形成することを特徴とするショットキー接合型半導体装置の製造方法。 - 第1導電型の炭化珪素基板と、
前記炭化珪素基板よりも不純物濃度が低い第1導電型の第1領域と、第2導電型の第2領域とを有する炭化珪素層と、
前記炭化珪素層の第1導電型の第1領域との間でショットキー接合している第1電極と、
前記炭化珪素基板の裏面との間でオーミック接合している第2電極とを備え、
前記炭化珪素層は第1トレンチと、前記第1トレンチ内に、前記第1トレンチの底面の中央よりも周辺を深く掘って形成された第2トレンチであるサブトレンチとを備え、
前記サブトレンチの内壁に位置する炭化珪素層は前記第2領域であり、
前記第2領域は、前記第1トレンチの中央の下よりも、前記第1トレンチの側面の下の方が接合位置が深いことを特徴とするショットキー接合型半導体装置。 - 請求項10において、
前記サブトレンチの下方にサブトレンチの形状に応じた不純物濃度のピークがあることを特徴とするショットキー接合型半導体装置。 - 請求項10において、
前記第1トレンチの開口幅が1μm以下であることを特徴とするショットキー接合型半導体装置。 - 請求項10において、
前記サブトレンチの深さは200nm以上あることを特徴とするショットキー接合型半導体装置。 - 請求項10において、
前記サブトレンチは上に向かって徐々に幅がせまくなるテーパ状の内壁を備え、
前記第1トレンチの幅が上に向かって徐々に幅が広くなるテーパ状の内壁を備えていることを特徴とするショットキー接合型半導体装置。
Priority Applications (3)
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JP2011238190A JP5865016B2 (ja) | 2011-10-31 | 2011-10-31 | トレンチ型ショットキー接合型半導体装置及びその製造方法 |
DE102012021534.7A DE102012021534B4 (de) | 2011-10-31 | 2012-10-31 | Schottky-sperrschicht-halbleiterelement vom grabentyp und herstellungsverfahren dafür |
US13/665,311 US9159562B2 (en) | 2011-10-31 | 2012-10-31 | Trench type Schottky junction semiconductor device and manufacturing method thereof |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2014003191A (ja) * | 2012-06-20 | 2014-01-09 | Hitachi Ltd | 半導体装置 |
US9029974B2 (en) | 2013-09-11 | 2015-05-12 | Infineon Technologies Ag | Semiconductor device, junction field effect transistor and vertical field effect transistor |
US9515199B2 (en) * | 2015-01-02 | 2016-12-06 | Cree, Inc. | Power semiconductor devices having superjunction structures with implanted sidewalls |
CN106653869A (zh) * | 2016-12-14 | 2017-05-10 | 丽晶美能(北京)电子技术有限公司 | 功率二极管 |
US10276731B2 (en) | 2017-03-16 | 2019-04-30 | Toyoda Gosei Co., Ltd. | Schottky barrier diode |
JP7059555B2 (ja) * | 2017-10-05 | 2022-04-26 | 富士電機株式会社 | 半導体装置 |
CN109509706B (zh) * | 2018-12-29 | 2023-05-02 | 重庆伟特森电子科技有限公司 | 一种碳化硅二极管的制备方法及碳化硅二极管 |
CN113614924A (zh) * | 2019-03-29 | 2021-11-05 | 京瓷株式会社 | 半导体装置以及半导体装置的制造方法 |
CN116344591B (zh) * | 2023-05-29 | 2023-09-01 | 深圳腾睿微电子科技有限公司 | 具有jbs晶胞结构的碳化硅半导体器件 |
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US5345100A (en) | 1991-03-29 | 1994-09-06 | Shindengen Electric Manufacturing Co., Ltd. | Semiconductor rectifier having high breakdown voltage and high speed operation |
JP3327571B2 (ja) | 1991-03-29 | 2002-09-24 | 新電元工業株式会社 | 半導体装置 |
JP2879479B2 (ja) | 1991-04-19 | 1999-04-05 | 新電元工業株式会社 | ショットキバリア半導体装置 |
US5262669A (en) * | 1991-04-19 | 1993-11-16 | Shindengen Electric Manufacturing Co., Ltd. | Semiconductor rectifier having high breakdown voltage and high speed operation |
US5365102A (en) * | 1993-07-06 | 1994-11-15 | North Carolina State University | Schottky barrier rectifier with MOS trench |
DE19723176C1 (de) * | 1997-06-03 | 1998-08-27 | Daimler Benz Ag | Leistungshalbleiter-Bauelement und Verfahren zu dessen Herstellung |
JP3618517B2 (ja) * | 1997-06-18 | 2005-02-09 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US7186609B2 (en) * | 1999-12-30 | 2007-03-06 | Siliconix Incorporated | Method of fabricating trench junction barrier rectifier |
JP2002009082A (ja) * | 2000-06-21 | 2002-01-11 | Fuji Electric Co Ltd | 半導体装置および半導体装置の製造方法 |
DE10339455B3 (de) * | 2003-08-27 | 2005-05-04 | Infineon Technologies Ag | Vertikales Halbleiterbauelement mit einer eine Feldelektrode aufweisenden Driftzone und Verfahren zur Herstellung einer solchen Driftzone |
US9419092B2 (en) * | 2005-03-04 | 2016-08-16 | Vishay-Siliconix | Termination for SiC trench devices |
JP2009224485A (ja) * | 2008-03-14 | 2009-10-01 | Toyota Central R&D Labs Inc | ダイオードとその製造方法 |
US8022474B2 (en) * | 2008-09-30 | 2011-09-20 | Infineon Technologies Austria Ag | Semiconductor device |
DE102009046596A1 (de) * | 2009-11-11 | 2011-05-12 | Robert Bosch Gmbh | Schottkydiode |
-
2011
- 2011-10-31 JP JP2011238190A patent/JP5865016B2/ja active Active
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2012
- 2012-10-31 DE DE102012021534.7A patent/DE102012021534B4/de not_active Expired - Fee Related
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JP2013098268A (ja) | 2013-05-20 |
US20130105820A1 (en) | 2013-05-02 |
DE102012021534B4 (de) | 2018-01-25 |
DE102012021534A1 (de) | 2013-05-02 |
US9159562B2 (en) | 2015-10-13 |
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