JP2017011060A - ショットキーバリアダイオード - Google Patents
ショットキーバリアダイオード Download PDFInfo
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- 230000004888 barrier function Effects 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 98
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 32
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 21
- 239000012535 impurity Substances 0.000 claims description 23
- 239000000969 carrier Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 68
- 238000000034 method Methods 0.000 description 31
- 230000015556 catabolic process Effects 0.000 description 28
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 16
- 239000000463 material Substances 0.000 description 14
- 239000010931 gold Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- -1 for example Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000005136 cathodoluminescence Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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Abstract
【解決手段】ショットキーバリアダイオード1は、半導体層10と、半導体層10の第1の主面10A上に形成され、半導体層10とショットキー接触するショットキー電極17と、半導体層10の第1の主面10Aとは反対側の第2の主面10B上に形成され、半導体層10とオーミック接触するオーミック電極18と、を備える。半導体層10は窒化ガリウムまたは炭化珪素からなる。半導体層10はドリフト層13を含む。ドリフト層13の厚みは2μm以下である。
【選択図】図1
Description
最初に本願発明の実施態様を列記して説明する。本願のショットキーバリアダイオード(SBD)は、半導体層と、半導体層の第1の主面上に形成され、半導体層とショットキー接触するショットキー電極と、半導体層の第1の主面とは反対側の第2の主面上に形成され、半導体層とオーミック接触するオーミック電極と、を備える。半導体層は窒化ガリウムまたは炭化珪素からなる。半導体層はドリフト層を含む。ドリフト層の厚みは2μm以下である。
(実施の形態1)
次に、本発明にかかるSBDの一実施の形態である実施の形態1を、以下に図面を参照しつつ説明する。なお、以下の図面において同一または相当する部分には同一の参照番号を付しその説明は繰返さない。
次に、本発明にかかるSBDの他の実施の形態である実施の形態2について説明する。図6および図1を参照して、実施の形態2のSBD2は、基本的には実施の形態1のSBD1と同様の構造を有し、同様の効果を奏する。しかし、実施の形態2におけるSBD2は、半導体層を構成する材料として炭化珪素(SiC)が採用される点、耐圧構造としてFP構造に変えてGRが採用される点において実施の形態1の場合とは異なっている。
nm、50nmおよび500nmとした。さらに、裏面パッド電極をオーミック電極18上に形成した。裏面パッド電極は、Ti膜/Pt膜/Au膜の3層構造を有する電極とした。Ti膜、Pt膜およびAu膜の厚みは、それぞれ50nm、100nmおよび1μmとした。
このfcの値が大きいほど高周波損失が小さいと考えられる。表1にRC積およびfcの値を示す。fcの1/10程度の周波数までは、損失の大きな低下はないと考えられる。そのため、GHzレベルの周波数での使用に対しては、10GHz以上のfc値の確保が良好な特性の目安となる。このような観点から検討すると、横型構造を有する試料2のfc値は10GHz未満であって高周波での使用に対して特性が不十分であるのに対し、縦型構造を有する試料1のfc値は10GHz以上であって高周波での使用に対して十分な特性が得られているといえる。
10,20 半導体層
10A,20A 第1の主面
10B,20B 第2の主面
11,21 基板
11A,21A 第1の主面
12,22 ストップ層
12A,22A 第1の主面
13,23 ドリフト層
15,25 エピタキシャル成長層
16,26 絶縁膜
16A,26A 開口部
17,27 ショットキー電極
18,28 オーミック電極
24 GR(ガードリング)
Claims (6)
- 半導体層と、
前記半導体層の第1の主面上に形成され、前記半導体層とショットキー接触するショットキー電極と、
前記半導体層の前記第1の主面とは反対側の第2の主面上に形成され、前記半導体層とオーミック接触するオーミック電極と、を備え、
前記半導体層は窒化ガリウムまたは炭化珪素からなり、
前記半導体層はドリフト層を含み、
前記ドリフト層の厚みは2μm以下である、ショットキーバリアダイオード。 - 前記半導体層の前記第1の主面上に形成される絶縁膜をさらに備え、
前記半導体層、前記絶縁膜および前記ショットキー電極は、前記ショットキー電極の一部と前記半導体層との間に前記絶縁膜の一部が挟まれる構造であるフィールドプレート構造を構成し、
前記半導体層の厚み方向に垂直な方向であって前記フィールドプレート構造の内縁に垂直な方向における前記フィールドプレート構造の幅は4μm以下である、請求項1に記載のショットキーバリアダイオード。 - 前記半導体層は窒化ガリウムからなる、請求項2に記載のショットキーバリアダイオード。
- 前記半導体層の前記第1の主面を含み、前記ドリフト層とは異なる導電型を有するガードリングをさらに備え、
前記ガードリングは、一部が前記半導体層の厚み方向において前記ショットキー電極の外縁を含む一部と重なり、前記ショットキー電極の前記外縁に沿って延在するように形成され、
前記半導体層の厚み方向に垂直な方向であって前記ガードリングの内縁に垂直な方向における前記ガードリングの幅は4μm以下である、請求項1に記載のショットキーバリアダイオード。 - 前記半導体層は炭化珪素からなる、請求項4に記載のショットキーバリアダイオード。
- 前記ドリフト層において多数キャリアを生成する不純物の濃度は1×1015cm−3以上4×1017cm−3以下である、請求項1〜5のいずれか1項に記載のショットキーバリアダイオード。
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JP2015123833A JP2017011060A (ja) | 2015-06-19 | 2015-06-19 | ショットキーバリアダイオード |
US15/185,917 US20160372609A1 (en) | 2015-06-19 | 2016-06-17 | Schottky barrier diode |
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TWI726964B (zh) * | 2015-12-25 | 2021-05-11 | 日商出光興產股份有限公司 | 積層體 |
KR102430498B1 (ko) * | 2016-06-28 | 2022-08-09 | 삼성전자주식회사 | 쇼트키 다이오드를 갖는 전자 소자 |
US10510905B2 (en) * | 2017-07-06 | 2019-12-17 | Cree, Inc. | Power Schottky diodes having closely-spaced deep blocking junctions in a heavily-doped drift region |
US11005354B2 (en) * | 2017-11-17 | 2021-05-11 | Shindengen Electric Manufacturing Co., Ltd. | Power conversion circuit |
CN107968126A (zh) * | 2017-11-22 | 2018-04-27 | 北京燕东微电子有限公司 | 一种SiC肖特基二极管及其制备方法 |
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