JP2010067977A - ドープされた電圧阻止層を含むバラクタダイオード - Google Patents
ドープされた電圧阻止層を含むバラクタダイオード Download PDFInfo
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Abstract
【解決手段】バラクタダイオードが、第1の伝導型を有するコンタクト層と、第1の伝導および第1の正味ドーピング濃度を有する、コンタクト層上の電圧阻止層と、電圧阻止層上の阻止接合と、キャリア注入接合から間隔を開けて配置された、電圧阻止層中の複数の個別ドープ領域とを含む。複数の個別ドープ領域は、第1の伝導型と、第1の正味ドーピング濃度よりも高い第2の正味ドーピング濃度とを有し、複数の個別ドープ領域は、バラクタダイオードの空乏領域が阻止接合に加えられた逆バイアス電圧に応答して広がるときに、バラクタダイオードのキャパシタンスを変調するように構成されている。バラクタダイオードを形成する関連した方法も開示されている。
【選択図】図1
Description
Claims (22)
- 第1の伝導型を有するコンタクト層と、
前記第1の伝導型および第1の正味ドーピング濃度を有する、前記コンタクト層上の電圧阻止層と、
前記電圧阻止層上の阻止接合と、
前記阻止接合から間隔を開けて配置された、前記電圧阻止層中の複数の個別ドープ領域と、
を備え、
前記複数の個別ドープ領域は、前記第1の伝導型と、前記第1の正味ドーピング濃度よりも高い第2の正味ドーピング濃度とを有し、前記複数の個別ドープ領域は、前記バラクタダイオードの空乏領域が前記阻止接合に加えられた逆バイアス電圧に応答して広がるときに、前記バラクタダイオードのキャパシタンスを変調するように構成されている
ことを特徴とするバラクタダイオード。 - 前記複数の個別ドープ領域は、前記阻止接合から第1の距離の間隔を開けて配置された第1の個別ドープ領域と、キャリア注入接合から第2の距離の間隔を開けて配置された第2の個別ドープ領域とを備え、前記第2の距離が前記第1の距離よりも大きいことを特徴とする請求項1に記載のバラクタダイオード。
- 前記第1の距離は約0.1から0.2μmであり、前記第2の距離は約0.2から0.3μmであることを特徴とする請求項2に記載のバラクタダイオード。
- 前記第1の個別ドープ領域は、前記阻止接合から前記第1の距離のところに第1の全電荷を供給し、前記第2の個別ドープ領域は、前記キャリア注入接合から前記第2の距離のところに第2の全電荷を供給し、前記第2の全電荷が前記第1の全電荷よりも多いことを特徴とする請求項2に記載のバラクタダイオード。
- 前記第1の個別ドープ領域は第1の正味ドーピング濃度を有し、前記第2の個別ドープ領域は第2の正味ドーピング濃度を有し、前記第2の正味ドーピング濃度は前記第1の正味ドーピング濃度よりも低いことを特徴とする請求項2に記載のバラクタダイオード。
- 前記複数の個別ドープ領域は、前記キャリア注入接合から第3の距離の間隔を開けて配置された第3の個別ドープ領域をさらに備え、前記第3の距離は前記第2の距離よりも大きく、前記第3の個別ドープ領域は第3の正味ドーピング濃度を有し、前記第3の正味ドーピング濃度は前記第2の正味ドーピング濃度よりも低いことを特徴とする請求項5に記載のバラクタダイオード。
- 前記複数の個別ドープ領域は、前記キャリア注入接合から第3の距離の間隔を開けて配置された第3の個別ドープ領域をさらに備え、前記第3の距離は前記第2の距離よりも大きいことを特徴とする請求項2に記載のバラクタダイオード。
- 前記第3の距離は約0.3から0.4μmであることを特徴とする請求項7に記載のバラクタダイオード。
- 前記第1、第2、および第3の個別ドープ領域は、前記キャリア注入接合に平行な横方向で重なり合っていないことを特徴とする請求項7に記載のバラクタダイオード。
- 前記電圧阻止層の厚さは、前記注入ドープ領域の全深さの2倍より小さいことを特徴とする請求項7に記載のバラクタダイオード。
- 前記電圧阻止層上にショットキー金属コンタクトをさらに備え、前記阻止接合はショットキー障壁接合を備えることを特徴とする請求項1に記載のバラクタダイオード。
- 前記第1の伝導型と反対の第2の伝導型を有する第2の層を前記電圧阻止層上にさらに備え、前記阻止接合は、前記第2の層と前記電圧阻止層の間にP−N接合を備えることを特徴とする請求項1に記載のバラクタダイオード。
- 前記電圧阻止層は炭化珪素を含むことを特徴とする請求項1に記載のバラクタダイオード。
- 請求項1に記載のバラクタダイオードを備えることを特徴とする高周波増幅器用の可変インピーダンス整合回路。
- バラクタダイオードを形成する方法であって、
第1の伝導型および第1の正味ドーピング濃度を有する電圧阻止層を形成するステップと、
キャリア注入接合から間隔を開けて配置された複数の個別ドープ領域を前記電圧阻止層中に形成するステップであって、前記複数の個別ドープ領域は、前記第1の伝導型と、前記第1の正味ドーピング濃度よりも高い第2の正味ドーピング濃度とを有し、前記複数の個別ドープ領域は、前記バラクタダイオードの空乏領域が前記キャリア注入接合に加えられた逆バイアス電圧に応答して広がるときに、前記バラクタダイオードのキャパシタンスを変調するように構成されているステップと、
前記電圧阻止層上に阻止接合を形成するステップと
を含むことを特徴とするバラクタダイオードの形成方法。 - 前記複数の個別ドープ領域を形成する前記ステップは、前記電圧阻止層中へイオンを注入するステップを含むことを特徴とする請求項15に記載の方法。
- 前記複数の個別ドープ領域を形成する前記ステップは、
第1の注入エネルギーおよび第1のドーズ量で第1のイオンを選択的に注入して、前記阻止接合から第1の距離の間隔を開けて配置された第1の個別ドープ領域を形成し、第2の注入エネルギーおよび第2のドーズ量で第2のイオンを選択的に注入して、前記キャリア注入接合から第2の距離の間隔を開けて配置された第2の個別ドープ領域を形成するステップを含み、前記第2の距離は前記第1の距離よりも大きいことを特徴とする請求項16に記載の方法。 - 第1のイオンおよび第2のイオンを選択的に注入する前記ステップは、前記第1および第2の個別ドープ領域が前記キャリア注入接合に平行な横方向で重なり合わないように、前記第1のイオンおよび前記第2のイオンを選択的に注入するステップを含むことを特徴とする請求項17に記載の方法。
- 前記第1の個別ドープ領域は、前記阻止接合から前記第1の距離のところに第1の全電荷を供給し、前記第2の個別ドープ領域は、前記キャリア注入接合から前記第2の距離のところに第2の全電荷を供給し、前記第2の全電荷は前記第1の全電荷よりも少ないことを特徴とする請求項17に記載の方法。
- 前記第1の個別ドープ領域は第1の正味ドーピング濃度を有し、前記第2の個別ドープ領域は第2の正味ドーピング濃度を有し、前記第2の正味ドーピング濃度は前記第1の正味ドーピング濃度よりも低いことを特徴とする請求項17に記載の方法。
- 前記電圧阻止層中へイオンを注入する前記ステップは、前記電圧阻止層上に多レベル注入マスクを形成するステップと、前記多層注入マスクを通して前記電圧阻止層中へイオンを注入するステップとを含み、前記多レベル注入マスクを通して注入されたイオンは、前記多レベル注入マスクの異なる厚さに対応して前記電圧阻止層中の異なる深さに位置付けされることを特徴とする請求項16に記載の方法。
- 第1の伝導型を有する共通コンタクト層と、
前記第1の伝導型および第1の正味ドーピング濃度を有する、前記共通コンタクト層上の第1の電圧阻止層と、
前記第1の電圧阻止層上の第1の阻止接合と、
前記第1の阻止接合から間隔を開けて配置された、前記第1の電圧阻止層中の第1の複数の個別ドープ領域であって、前記第1の伝導型と、前記第1の正味ドーピング濃度よりも高い第2の正味ドーピング濃度とを有する第1の複数の個別ドープ領域と、
前記第1の電圧阻止層から間隔を開けて配置され、前記第1の伝導型および第3の正味ドーピング濃度を有する、前記共通コンタクト層上の第2の電圧阻止層と、
前記第2の電圧阻止層上の第2の阻止接合と、
前記第2の阻止接合から間隔を開けて配置された、前記第2の電圧阻止層中の第2の複数の個別ドープ領域であって、前記第1の伝導型と、前記第3の正味ドーピング濃度よりも高い第4の正味ドーピング濃度とを有する第2の複数の個別ドープ領域と、
前記共通コンタクト層上のオーミックコンタクトと
を備えることを特徴とするバラクタダイオード構造。
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CN107958939A (zh) * | 2016-10-17 | 2018-04-24 | 南京励盛半导体科技有限公司 | 一种氮化鎵基异质结肖特基二极管结构 |
GB2561388B (en) * | 2017-04-13 | 2019-11-06 | Raytheon Systems Ltd | Silicon carbide integrated circuit |
GB2561390B (en) | 2017-04-13 | 2020-03-11 | Raytheon Systems Ltd | Silicon carbide transistor |
DE102017125162B4 (de) | 2017-10-26 | 2023-12-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halbleiterbauelement, Verwendung eines Halbleiterbauelements |
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